TO-126 Plastic-Encapsulate TransistorsBD137-TU TO-126Tube BD139-TUTO-126Tube 1 D,Aug,2017 BD135 XXX...

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TO – 126 1. EMITTER 2. COLLECTOR 3. BASE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD135 / BD137 / BD139 TRANSISTOR (NPN) FEATURES High Current Complement To BD136, BD138 And BD140 MAXIMUM RATINGS (T a =25unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage BD135 BD137 BD139 45 60 80 V V CEO Collector-Emitter Voltage BD135 BD137 BD139 45 60 80 V V EBO Emitter-Base Voltage 5 V I C Collector Current 1.5 A P C Collector Power Dissipation 1.25 W R θJA Thermal Resistance From Junction To Ambient 100 /W T j Junction Temperature 150 T stg Storage Temperature -55~+150 Equivalent Circuit BD135,BD137,BD139o Solid dot = Green molding compound device, if none, the normal device ode ORDERING INFORMATION Part Number Package Packing Method Pack Quantity BD135 TO-126 Bulk BD137 TO-126 BD139 TO-126 Bulk BD135-TU TO-126 Tube Bulk BD137-TU TO-126 Tube BD139-TU TO-126 Tube www.cj-elec.com 1 D,Aug,2017 BD135 XXX BD137 XXX BD139 XXX 60pcs/Tube 200pcs/Bag 200pcs/Bag 200pcs/Bag 60pcs/Tube 60pcs/Tube

Transcript of TO-126 Plastic-Encapsulate TransistorsBD137-TU TO-126Tube BD139-TUTO-126Tube 1 D,Aug,2017 BD135 XXX...

Page 1: TO-126 Plastic-Encapsulate TransistorsBD137-TU TO-126Tube BD139-TUTO-126Tube 1 D,Aug,2017 BD135 XXX BD137 XXX 9 60pcs/Tube 200pcs/Bag 200pcs/Bag 200pcs/Bag 60pcs/Tube 60pcs/Tube Parameter

TO – 126

1. EMITTER

2. COLLECTOR

3. BASE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-126 Plastic-Encapsulate Transistors

BD135 / BD137 / BD139 TRANSISTOR (NPN)

FEATURES High Current Complement To BD136, BD138 And BD140

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit

VCBO Collector-Base Voltage

BD135

BD137

BD139

45

60

80

V

VCEO Collector-Emitter Voltage BD135

BD137

BD139

45

60

80

V

VEBO Emitter-Base Voltage 5 V IC Collector Current 1.5 A PC Collector Power Dissipation 1.25 W

RθJA Thermal Resistance From Junction To Ambient 100 ℃/W Tj Junction Temperature 150 ℃

Tstg Storage Temperature -55~+150 ℃

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Equivalent Circuit

BD135,BD137,BD139,!�-�����o.��Solid dot = Green molding compound device, if none, the normal device

///,ode�

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity

BD135 TO-126 Bulk

BD137 TO-126

BD139 TO-126 Bulk

BD135-TU TO-126 Tube

Bulk

BD137-TU TO-126 Tube

BD139-TU TO-126 Tube

www.cj-elec.com 1 D,Aug,2017

BD135 �XXX

BD137 �XXX

BD139 �XXX

60pcs/Tube

200pcs/Bag

200pcs/Bag

200pcs/Bag

60pcs/Tube

60pcs/Tube

Page 2: TO-126 Plastic-Encapsulate TransistorsBD137-TU TO-126Tube BD139-TUTO-126Tube 1 D,Aug,2017 BD135 XXX BD137 XXX 9 60pcs/Tube 200pcs/Bag 200pcs/Bag 200pcs/Bag 60pcs/Tube 60pcs/Tube Parameter

Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage

BD135

BD137

BD139

V(BR)CBO IC= 0.1mA,IE=0

45

60

80

V

Collector-emitter sustaining voltage

BD135

BD137

BD139

VCEO(SUS)* IC=0.03A,IB=0

45

60

80

V

Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 5 V Collector cut-off current ICBO VCB=30V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 10 μA

hFE(1)* VCE=2V, IC=150mA 40 250

hFE(2)* VCE=2V, IC=5mA 25DC current gain

hFE(3)* VCE=2V, IC=500mA 25

Collector-emitter saturation voltage VCE(sat)* IC=500mA,IB=50mA 0.5 V

Base-emitter voltage VBE* VCE=2V, IC=500mA 1 V

*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.

CLASSIFICATION OF hFE(1)

RANK 6 10 16RANGE 40-100 63-160 100-250

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aT =25� unless otherwise specified

www.cj-elec.com 2 D,Aug,2017

Page 3: TO-126 Plastic-Encapsulate TransistorsBD137-TU TO-126Tube BD139-TUTO-126Tube 1 D,Aug,2017 BD135 XXX BD137 XXX 9 60pcs/Tube 200pcs/Bag 200pcs/Bag 200pcs/Bag 60pcs/Tube 60pcs/Tube Parameter

10 100 10000

50

100

150

200

250

300

350

400

450

500

0 25 50 75 100 125 1500

200

400

600

800

1000

1200

1400

1600

10 100 1000400

500

600

700

800

900

1000

1100

1200

10 100 10000

50

100

150

200

250

300

350

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.00.00

0.05

0.10

0.15

0.20

0.25

0.30

400 600 800 100010

100

1000

VCE= 2V

Ta=100 oC

Ta=25 oC

COLLECTOR CURRENT IC (mA)

DC

CU

RR

EN

T G

AIN

h

FE

IChFE ——

1500

CO

LLEC

TOR

PO

WER

DIS

SIPA

TIO

N

P

c (m

W)

AMBIENT TEMPERATURE Ta ( )℃

Pc —— Ta

COLLECTOR CURRENT IC (mA)

BASE

-EM

ITTE

R S

ATU

RAT

ION

VOLT

AGE

V B

Esa

t (m

V)

Ta=25℃

Ta=100℃

β=10

ICVBEsat ——

1500

Ta=25℃

Ta=100℃

β=10

VCEsat —— IC

CO

LLE

CTO

R-E

MIT

TER

SA

TUR

ATI

ON

VOLT

AGE

V C

Es a

t (m

V)

COLLECTOR CURRENT IC (mA)

1500

COMMONEMITTERTa=25℃

1mA

0.9mA

0.8mA

0.7mA

0.6mA

0.5mA

0.4mA

0.3mA

0.2mA

IB=0.1mA

COLLECTOR-EMITTER VOLTAGE VCE (V)

CO

LLE

CTO

R C

UR

RE

NT

I C

(A

)

Static Characteristic

VCE=2V

Ta=25℃Ta=100 oC

BASE-EMITTER VOLTAGE VBE(mV)

CO

LLE

CTO

R C

UR

RE

NT

I

C (m

A)

IC——VBE 1500

Typical Characteristics

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TO-126 Package Outline Dimensions

Min Max Min MaxA 2.500 2.900 0.098 0.114

A1 1.100 1.500 0.043 0.059b 0.660 0.860 0.026 0.034

b1 1.170 1.370 0.046 0.054c 0.450 0.600 0.018 0.024D 7.400 7.800 0.291 0.307E 10.600 11.000 0.417 0.433e

e1 4.480 4.680 0.176 0.184h 0.000 0.300 0.000 0.012L 15.300 15.700 0.602 0.618

L1 2.100 2.300 0.083 0.091P 3.900 4.100 0.154 0.161Φ 3.000 3.200 0.118 0.126

Symbol Dimensions In Millimeters Dimensions In Inches

2.290 TYP 0.090 TYP

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