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Sufian Abedrabbo

OUTLINEOUTLINE

AbstractIntroductionIon Beam Mixing in Materials ResearchExperimental Setup – Ion-Beam Mixing,

Rutherford BackscatteringConclusionsAcknowledgment

ABSTRACTABSTRACT

An overview of processes enabled by the Availability of Accelerators (Van de Graaff) / Ion Implanters.

In particular Results of:- Ion Beam Assisted Surface Modification (IM) of Semiconductors,- Silicon-on-Insulators Formation are Briefed.- Structural Analysis Capabilities - Rutherford Backscattering (RBS).

INTRODUCTIONINTRODUCTION Van de Graaff accelerator is one of many types of accelerators

available today.

In a University, Accelerators / Implanters provide tremendous capabilities:

a) Ion Beam Assisted Surface Modification (IM) is a very powerful technique by which non-equilibrium or meta-stable alloys and inter- metallic compounds on surfaces can be formed. This

process is typically preceded by low-cost layer deposition.

b) Direct Implantation of gaseous species to form an electrically modified active region.

c) Direct Implantation of Oxygen or Nitrogen followed by a long annealing process to form Silicon-on-Insulator.

d) Van de Graaff accelerator provides RBS capability to structurally characterize processed samples.

APPLICATIONSIon-Beam Mixing in Materials Research

At Jordan University, we have utilized the Van de Graaff accelerator in forming:

a) Silicon-Germanium structures (using - IM) that have the potential to serve the Photovoltaic Industry, display and communication industries, and in fabricating advanced Hetero-junction-Bipolar-Complementary-Metal-Oxide Semiconductor (Bi-CMOS)

b) Rare-Earth Impurity Centers (using - IM) in Silicon, thus forming promising Silicon light emitting diodes (Si-LED).

c) Silicon on Nitrides and Silicon on Oxides by direct implantation of O and N followed by Rapid Thermal Annealing (RTA).

Experimental SetupSchematic of a Beam-Line in a Van de Graaff AcceleratorSchematic of a Beam-Line in a Van de Graaff Accelerator

Experimental Setup

Schematic diagram representing the setup for RBS and Ar-Irradiation

Experimental Setup - - RBS Set-upRBS Set-up

RBS - FundamentalsRBS - Fundamentals

E kE E

k dE

dx

dE

dxx

kE kE Nx

Nx

o

E kE

o o

o

o o

1

1

1 2

1

1

=

cos cos

cos cos

k

E

Eo

mM

mM

mM

1

2 22

1

1

cos sin

APPLICATIONS - IWhy Si-Ge !!Why Si-Ge !!

Si-Ge Alloys:

• Comprises 38% of the copmpound semiconductor market competing with GaAs;

• Becoming a major player in high frequency applications - cellular phones;

• Dominant in forming high-performance strained silicon layers featuring high-mobility;

• Permits band gap engineering from 1.12-0.66eV;

• Ge nano-clusters (alone or when oxidized) can form promising light emission centers and vice versa improved photovoltaics

Temperature and concentration dependence of the fundamental Temperature and concentration dependence of the fundamental indirect energy gaps for Siindirect energy gaps for Si1-x1-xGeGexx

R. Braunstein et.al ,

Phys. Rev ,.

pg.695, vol. 109 (1958)

Normalized photocurrent spectra for 4 samples; The energies Normalized photocurrent spectra for 4 samples; The energies indicate te lowest quadratic threshold for each sampleindicate te lowest quadratic threshold for each sample

D.V. Lang et al. Appl. Phys. Lett., pg.1333, vol.47 (12) (1985)D.V. Lang et al. Appl. Phys. Lett., pg.1333, vol.47 (12) (1985)

Germanium and silicon thin films were deposited in a chamber at a pressure of 10-4 Pa , on silicon substrates to form a multi-layer configuration of

Experimental Details

500

Si(Substrate) SiGe

10001730

Sample 1

Sample 2 Si(Substrate) Ge GeSi Si

500 900830 500

1730 1000

Ge SiSi(Substrate)

350 400 450 500 550 600 650 700 7500

200

400

600

800

1000

1200

1400

As-Deposited 1E16 1E17

Y A

xis

Title

X axis title

Results and DiscussionsResults and Discussions Ge peak most right, next hump surface-Si, down

edge of the step is the Si-Substrate Small doses (1E16ion/cm2) do not change the the

structure significantly Evidence of mixing is clear at the dose

1E17ion/cm2, Ge-peak yield is decreasing and depth is increasing

Si peak’s yield is increasing indicating that scattered ions from Ge are losing more energy, and hence diffusing into substrate.

Next figure indicate the same result

Near surface Ge concentration as function of Ar dose

Top Si layer concentration as function

of dose.

Ge Peak

0.4

0.6

0.8

1

0 5 10 15 20 25

Dose (x1E16)

Near

-sur

face

re

lative

Ge

conc

entra

tion

Si-Peak

0.6

0.8

1

1.2

0 5 10 15 20 25

Dose (x1E16)

Top

Si la

yer's

re

lativ

e co

ncen

tratio

n

RESULTS and DISCUSSIONSRESULTS and DISCUSSIONS

Rutherford manipulation program (RUMP) yielded:

(50nm) Si/ (50nm) Si0.99Ge0.01 / (60nm) Si0.656Ge0.328Ar0.017/ (80nm) Si

0.52Ge0.43Ar0.044/ (70nm) Si0.45Ge0.45Ar0.1/ (25nm) Si0.48Ge0.48Ar0.048 Total penetration depth agrees with the Stopping

and Range of Ions in Matter (SRIM-2003) calculations (330nm) for multilayered Si/Ge Structure.

Si(Substrate) Ge GeSi Si

830 500 900 500

350 400 450 500 550 600 650 7000

100

200

300

400

500

600

700

800

900

1000

As-deposited 1E16 5E16 1E17 2E17

Y A

xis

Titl

e

X axis title

0.7

0.8

0.9

1

1.1

0 5 10 15 20 25

R-Peak-Ge

L-Peak-Ge

R-Peak-Si

L-Peak-SI

Concentration of Si and Ge layers as function of the dose.

RESULTS and DISCUSSIONSRESULTS and DISCUSSIONS

• Valley between two Ge peaks diminishes indicating mixing

• The two Ge-peaks remain separated meaning Ar+ ions pushes both layers deeper into subsequent layer/substrate

• Trailing tail of the second Ge peak (lower channel number) shifts strongly deeper, enhancing the background of the surface Si

RESULTS and DISCUSSIONSRESULTS and DISCUSSIONS• RUMP yielded:

(30nm) Si/ (50nm) Si0.5Ge0.5/ (85nm) Si0.37Ge0.57Ar0.06/ (80nm) Si0.6Ge0.3Ar0.1/

(60nm) Si0.07Ge0.71Ar0.21/ (40nm) Si0.83Ge0.17/(50nm) Si0.8Ge0.2/ (100nm)

Si0.9Ge0.1

• Total actual penetration depth surpasses that using SRIM-2003 by close to 30%. due to the radiation enhanced diffusion (RED).

• Evidence is the large shift of the trailing edge of the Ge second peak towards deeper regions.

• The second Ge layer can be used as a process monitoring indicator

APPLICATIONS - IIRare-Earth Impurity Centers

R.E. features have been studied in Solids for sometime.

Form base for Erbium doped Fiber Amplifiers (EDFA), which is unavoidable in Optical communications networks

Proved to improve Si emission by over 10 folds *. To put a figure on this, ST scientists are claiming an external quantum efficiency of 10 to 20 percent, while others talking about 0.2-6% @ RT.

*S. Coffa, F. Franzo, and F. Priolo, Materials Research Society Bulletin, 23, pp. 25-32, (1998)

Advantages of Efficient Si-LEDAdvantages of Efficient Si-LEDEasy to integrate with other Si-based

circuitriesProcesses needed are the same as those in

electronic industryUpon utilizing cascading of LED high

power diodes for machineryAutomotive industryPossible tunable source upon using proper

R.E. co-dopants

Rare-Earth Metals Radiative and Rare-Earth Metals Radiative and Non-Radiative TransitionsNon-Radiative Transitions

PREPARED SAMPLESPREPARED SAMPLES

80nm

Ge-Si-ErSi(Substrate) Si-Er

80nm

70nm

Si-ErSi(Substrate) Si-Yb

50nm

60nm

Si(Substrate) Si-Er

80nm

Si Si-Er

10nm

RBS Spectra of Sample # 1RBS Spectra of Sample # 1

RBS Spectra of Sample # 2RBS Spectra of Sample # 2

RBS Spectra of Sample # 3RBS Spectra of Sample # 3

Photoluminescence of Three Prepared SamplesPhotoluminescence of Three Prepared Samples

Evidence of Efficient Mixing for Sample Evidence of Efficient Mixing for Sample #1, Using Ar-Irradiation #1, Using Ar-Irradiation

Results and DiscussionsResults and Discussions

Ion-Beam Mixing proved to be an efficient, and low-cost process to enable fabrication of Si-Rare-Earth.

Rare-Earth Metals concentrations above solubility level have been achieved.

Light output of reasonable intensity is yielded from various structures; thus indicating that segregation of Rare-Earth is not dominant.

APPLICATIONS - IIISilicon-on-Insulators, Why

To enhance the performance of Si-devices, SOI is considered, especially when recognizing that only a thin layer from a face of the wafer is used for making the electronic components; the rest essentially serves as a mechanical support.

The major role of SOI is to electronically insulate a fine layer of the mono-crystalline silicon from the rest of the silicon wafer, beside the ever growing role of W.G.

Embedded layer of insulation enables the SOI-based chips to function at significantly higher speeds (30 to 40% more) while reducing electrical losses. The result is an increase in performance and a reduction in power consumption by up to up to 50%

Why Silicon-on-InsulatorsWhy Silicon-on-Insulators

Circuits built in SOI wafers have reduced parasitic capacitance when compared to bulk or epi-wafers.

Useful for space application as they are immune to radiation-induced single event upset (SEU).

Free of latch-up.

Number of masks are reduced by as much as 30%.

Lower junction leakage and higher carrier mobility.

Comparison Between Schematics of CMOS Comparison Between Schematics of CMOS Processed on SOI and Regular CMOSProcessed on SOI and Regular CMOS

Left CMOS transistor is directly situated on Substrate

while the CMOS built on a silicon-on-insulator substrate is

isolated. The Latter is immune to current leackage.

RBS Spectra for Si-on-Oxide and RBS Spectra for Si-on-Oxide and Si-on-NitrideSi-on-Nitride

Depth Profile for the Two Depth Profile for the Two Prepared SamplesPrepared Samples

FT-IR Absorbance Spectra of FT-IR Absorbance Spectra of Si-on-Oxide Indicating Major SiO PeaksSi-on-Oxide Indicating Major SiO Peaks

FT-IR Absorbance Spectra of FT-IR Absorbance Spectra of Si-on-Nitride Indicating Major SiN PeaksSi-on-Nitride Indicating Major SiN Peaks

Results and DiscussionsResults and Discussions

Van de Graaff accelerator has proved once again a powerful tool for fabricating Silicon on Insulators.

Various dielectric-film structures has been achieved with different density / porosity.

Rapid Thermal Annealing can achieve Silicon-on-Nitrides of high quality.

Conclusion

•A college-Based Van de Graaff Accelerator has been utilized to process various structures by Ion-Beam Mixing and direct implantations techniques.

•Novel Si-Ge Structures containing more than 50% of Ge have been processed, with the possibility of annealing without worrying about lattice mismatch problems at the interfaces due to the method of preparation.

•Unique Rare-Earth in Silicon structures have been processed using IM. High mixing efficiency is achieved while maintaining above solubility level concentrations.

•Silicon-on-Insulators are processed by direct implantation of O and N followed by RTA.

AcknowledgmentAcknowledgment

I would like to acknowledge and give my special thanks to Mr. Khalil El-Borno for his innovation with figures.

I am indebted to the crew of the Van de Graaff accelerator for their continuous support

Many thanks to Dr. J.C. Hensel who supplied part of the materials utilized in this research