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Title for ELEC 7364 Project Report

Author Name Affiliation and Address

Date of Submission: August 6, 2008

Abstract

A relevant and well-conceived abstract

consisting of 75 to 150 words should be given.

Introduction The Paper should be of a review and

summary nature, based on a survey of the most recent research literature. The author is expected to provide insightful conclusion and suggestions. No text in this report can be a direct copy of any other materials. This CANNOT be your research paper.

General Format The length of the Paper should be 2

pages of text and figures, plus a third page with 8 to 10 reference citations. Be selective and cite only the most relevant references.

Avoid writing excessively long

paragraphs. It makes better reading and organization if ideas are grouped in nicely formed paragraphs and sections. Single line spacing should be used, with an extra line between paragraphs and after a section heading.

Paragraphs are to be left-right justified,

with a 3/16 inch initial indentation. Times-Roman font is to be used in the double-column text. The general format of the Paper is summarized in Table I.

Acronyms, such as “IC”, should be defined at the first instances of their

appearance. Table I. General format of the Term Paper.

Top, bottom, left, right margins 1 inch Columns 2 Title Size Size 14, bold All Other Text Size 12 Section heading Size 12, bold

The general format of the Paper

outlined in this template is to be strictly followed. Marks would be automatically deducted for any violations, no matter how trivial.

Tables and Figures Tables and figures are excellent tools

for organizing and summarizing information. Use them whenever suitable. It is preferable to insert tables and figures after they are first mentioned in the text. Never leave them “orphaned” so that they appear somewhere in the Paper without ever being mentioned in the text.

Tables and figures must be centered.

Table captions should be centered, indexed using capital Roman numerals and placed before the corresponding tables. Figure captions are left-right justified, indexed using Arabic numerals and placed after the corresponding figures. Examples are given in Table I and Fig. 1. Please note the selective use of boldfaced fonts in the captions.

Please note that whenever specific tables or figures are mentioned in the text,

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the words “Table” and “Figure” are capitalized.

Figure 1: 200 nm wide sealed SU-8 nanochannels fabricated by 2-step reversal UV imprint.

What to Submit

The submission package will consist of both 2 copies of the Paper and 1 copy of the PowerPoint presentation.

The deadline for submission is

Wednesday, August 6, 2008. No late submission will be entertained. You are encouraged to start as early as possible.

Grading Criterion

The Project is graded based on the Paper (60%): its technical merit (30%), writing (15%), adherence to the format (10%) and completeness of the submission package (5%); and the Presentation (40%): PowerPoint slides (20%) and presentation (20%).

Conclusion

No proper paper should end without a

relevant and well thought-out conclusion section. This is your own interpretation of the subject and should include your insight and suggestions. References [1] C. W. Tang, S. A. VanSlyke, “Optical

electroluminescent diodes.” Applied Physics Letters, Vol. 51(12), 1987. pp 913-915.

[2] Z. Meng, M. Wang, H. S. Kwok, M. Wong, “Recrystallized metal-induced laterally crystallized polycrystalline silicon for system-on-panel applications.” Digest of Technical Papers. 1999 International Symposium of the Society for Information Display. pp386-389.

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ELEC 7364 Advance Topics in Microelectronics

Project Topics

1. Trend of wafer size beyond 300 mm. 2. Preparation of silicon-on-insulator wafer: theory and practice. 3. Comparison of techniques for forming strained silicon-on-insulator. 4. Comparison of techniques for forming strained silicon on bulk wafers. 5. Techniques of forming and characteristics of carbon nanotube field-effect transistor. 6. Techniques of forming and characteristics of graphene-based devices. 7. Recent developments in wafer surface conditioning (cleaning, drying, etc.) techniques. 8. Shallow trench isolation (STI) technology: issues and current practice. 9. Comparison of techniques for forming high-k insulators: status, issues and trend. 10. Comparison of techniques for forming low-k insulators: status, issues and trend. 11. Theory and applications of atomic layer chemical-vapor deposition (ALCVD). 12. Formation of dual work function metal-gate CMOS technology: status, issues and

trend. 13. Fully-silicided (FUSI) technology: status, issues and trend. 14. Optical lithography technology: status, issues and trend. 15. Immersion lithography: theory, status and trend. 16. Theory and practice of nanoimprint technology. 17. Theory and practice of enhancing lithography resolution using phase-shift masks. 18. Projection electron lithography: status, issues and trend. 19. Direct write lithography: status, issues and trend. 20. Extreme UV lithography (EUV): status, issues and trend. 21. Theory and practice of self-assembly technology. 22. General survey of lithography techniques for large-area flat-panel displays. 23. Ultra-low energy implantation for shallow junction formation: status, issues and trend. 24. Self-aligned silicide technology: status, issues and trend. 25. Applications of rapid thermal processing technologies: status, issues and trend. 26. Transient-enhanced diffusion: current theoretical understanding and process control. 27. Plasma immersion doping techniques: status, issues and trend. 28. Ion doping techniques for large-area glass substrates. 29. Metrology techniques for 2- and 3-dimensional dopant profiling. 30. Control and elimination of plasma process induced damage. 31. Comparison of techniques for dry etching: status, issues and trend. 32. Comparison of techniques for wet etching and cleaning: status, issues and trend. 33. Recent developments in process and modeling of CMP technology. 34. Theory and current practice of copper electroplating technology. 35. Copper damascene technology: status, issues and trend. 36. General survey of the status of post-CMP clean. 37. Recent development in CVD barrier/seed/metal technologies. 38. Multilevel metallization: status, issues and trend. 39. Factory automation technologies and trends. 40. Comparative study of state-of-the-art silicon DRAM technologies. 41. General survey of the current status of non-silicon based DRAM technologies.

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42. Phase-change material for non-volatile memory applications: status, issues and trend. 43. Comparative study of state-of-the-art of integrated MEMS accelerometer technologies. 44. Current status of MEMS technologies for optical switching. 45. Current status of RF MEMS technologies. 46. Current status of MEMS based chemical sensors. 47. Current status of MEMS based biomedical sensors. 48. Current status of photonic devices and systems. 49. Current status of solid-state light devices and systems. 50. Current status of nanotechnology and its applications. 51. Current status of three dimensional devices and applications. 52. Thin-film silicon solar cell technologies. 53. Low-temperature amorphous/ polycrystalline silicon thin-film transistor technology:

status, issues and trend. 54. Organic thin-film transistor technology: status, issues and trend. 55. Nano-scale Electronic Devices: High Speed/High Frequency devices, memories, or

microprocessors. 56. Nano-scale Photonic Devices: LEDs, Lasers, Detectors, Display, or Solar Cells. 57. Nano-scale Sensors: Thermal, Mechanical, Magnetic, or Chemical Sensors. 58. Nano-scale Biomedical Devices: single molecule analysis, control, or modifications;

bio-sensing, simulation, or manipulation. 59. Nano-scale Energy Devices: Energy Generation, Storage, or Delivery. 60. Quantum Effect Devices: Quantum Wires, Quantum Dots, or devices/systems with

quantum confinement effects. 61. Carbon-based (Nanotube, Nanowire, Graphene) Devices: electronic, photonic, or

mechanical devices/systems. Project Assignment

A. Pick a topic for your project and narrow the subject. B. Make up a title for your project with specific focus. C. Email your project title to TA by July 9, 2008. D. Do NOT pick topic you have written research paper(s).

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ELEC 7364 Advance Topics in Microelectronics

Project Presentations 1. Start Project – not to wait till last minute. 2 copies of the Paper (2 + 1 pages; with

your own interpretation of the subject and should include your insight and suggestions) and 1 copy of the PowerPoint presentation due Wednesday, August 6, 2008. Also email both files to Prof. Pang (spang@eee.hku.hk).

2. Presentation order – to be determined. 3. Total time of 5 min each. 4. Powerpoint file – maximum of 5 slides. 5. Presentation grading: PowerPoint slides (20%) and presentation (20). Grading by

classmates. 6. Grading Guidelines: 10 points for each category, Excellent 10, Very Good 8, Good 6,

Average 4, Below Average 2.