Texas Instruments Transistor Diode Data Book Text

The Engineering Staff of

TEXAS INSTRUMENTS INCORPORATEDComponents Group

S(%6

TheTransistorand DiodeData Book

for

Design Engineers

Texas InstrumentsINCORPORATED

TYPE NUMBER INDEX El

GLOSSARY

TRANSISTOR SELECTION GUIDES

TRANSISTOR INTERCHANGEABILITY

TRANSISTOR DATA SHEETS

TRANSISTOR CHIP CHARACTERIZATION

TRANSISTOR QUALITY AND RELIABILITY INFORMATION

DIODE PRODUCT SPECTRUM

DIODE SELECTION GUIDES

DIODE INTERCHANGEABILITY

DIODE DATASHEETS Ml

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Texas InstrumentsPrinted in U.S.A. INCORPORATED

TheTransistorand DiodeData Book

for

Design Engineers

First Edition


CC-41371242-73-CSS printed in u.S.A.

IMPORTANT NOTICES

Texas Instruments reserves the right to make changes at any timein order to improve design and to supply the best product

possible.

Tl cannot assume any responsibility for any circuits shown orrepresent that they are free from patent infringement.

Copyright 1973Texas Instruments Incorporated

Third Printing

THE TRANSISTOR AND DIODE DATA BOOK

Since 1954, when Texas Instruments introduced the first silicon transistor to the marketplace, and later with the invention ofthe integrated circuit, Tl has been pre-eminent in the semiconductor industry.

New semiconductor products are introduced almost daily; new applications for semiconductor products are being found orcomtemplated at an ever-increasing rate, especially in the consumer and automotive fields. It is a difficult task for theequipment design engineer to stay abreast of all of the discrete and integrated-circuit products available to him in his effortsto choose the best device at the optimum cost effectiveness. It is the aim of Texas Instruments to provide the design engineerwith the maximum amount of accurate product data organized in such a manner that the pertinent data may be located inthe least amount of time.

Due to the amount of data involved, it would be inconvenient to present Tl's complete line of standard discrete products in asingle volume. Tl's broad line of power products are described in The Power Semiconductor Data Book for Design Engineers,First Edition (CC-404); optoelectronic products are presented in The Optoelectronics Data Book for Design Engineers, FirstEdition (CC-405). For ease of reference, all current devices listed in those two volumes are contained in the Type NumberIndex (Section O) herein. This 1248-page volume is designed to complement those two volumes and essentially complete thecurrent description of Tl's line of discrete semiconductors by adding all low-power silicon transistors and diodes. (Generally,"low-power" denotes free-air power dissipation of one watt or less.)

This volume contains over 800 silicon transistor types (grown-junction, multijunction, unijunction, and field-effecttransistors) and over 500 silicon diode types (switching, rectifying, voltage-regulating, voltage-variable-capacitance, andgeneral purpose diodes as well as multielement diode arrays and matrices), over 150 of which are being announced for thefirst time.

Although this volume offers specification and interchangeability data only for low-power silicon transistors and diodes,complete technical information for all Tl semiconductor products is available from your nearest Tl field-sales office, localauthorized Tl distributor, or by writing direct to: Marketing and Information Services, Texas Instruments Incorporated,P.O. Box 5012, Dallas, Texas 75222.

We hope that you will find The Transistor and Diode Data Book for Design Engineers a useful addition to your technicallibrary.

TypeNumberIndex

TYPE NUMBER INDEX

TYPE NO. SEC-PAGE1N261 10-1

1N456 10-21N456A 10-21N457 10-21N4S7A 10-21N458 10-21N468A 10-21N459 10-21N459A 10-21N461 10-2

1N461A 10-21N462 10-21N462A 10-21N463 10-21N463A 10-21N464 10-21N464A 10-21N482 10-21N482A 10-21N482B 10-21N483 10-21N483A 10-21N483B 10-21N484 10-2

1N4S4A 10-21N484B 10-21N48S 10-2

1N48BA 10-21N48SB 10-21N625 1061N626 1M1N627 1061N628 1041N629 10*1N643 10-71N645 10-81N645A 10-81N646 10-81N647 10-81N648 10-81N649 10-81N659 10-91N660 10-91N661 10-9

1N662 10-101N663 10-101N702 10-111N702A 10-111N703 10-111N703A 10-11


1N704A 10-111N705 10-111N705A 10-111N706 10-111N706A 10-111N707 10-11

1N707A 10-111N708 10-131N708A 10-131N709 10-131N709A 10-131N710 10-131N710A ..... 10-131N711 10-13

1N711A 10-13

1N712 ..... 10-13

1N712A 10-13

1N713 10-13

1N713A 10-131N714 10-13

1N714A 10-131N715 10-13

1N715A 10-13

1N716 10-131N716A 10-131N717 10-13

1N717A 10-13

1N718 10-131N718A 10-131N719 10-131N719A 10-131N720 10-131N720A 10-131N721 10-13

1N721A 10-13

1N722 10-13

1N722A 10-13

1N723 10-131N723A 10-131N724 10-131N724A 10-131N725 10-131N725A 10-13

1N726 10-131N726A 10-131N746 10-151N746A 10-15

1N747 10-151N747A 10-15

TYPE NO. SEC-PAGE1N748 10-151N748A 10-151N749 10-151N749A 10-151N750 10-151N750A 10-151N751 10-15

1N751A 10-151N752 10-15

1N752A 10-151N753 10-151N753A 10-151N754 10-15

1N754A 10-151N755 10-15

1N755A 10-151N756 10-15

1N756A 10-151N757 10-15

1N757A 10-151N758 10-151N758A 10-151N759 10-15

1N759A 10-151N761 10-17

1N762 10-171N763 10-171N764 10-171N765 10-171N766 10-171N767 10-17

1N768 10-171N769 10-171N914 10-191N914A 10-191N914B 10-191N915 10-191N916 10-191N916A 10-191N916B 10-191N917 10-191N957 10-221N957A 10-221N957B 10-221N958 10-221N958A 10-221N958B 10-221N959 10-221N959A 10-221N959B 10-22


POST OFFICE BOX 5012 DALLAS. TEXAS 78222

TYPE NUMBER INDEX

TYPE NO. SEC-PAGE1N960 . . . . . 10-221N960A . . . . . 10-221N960B . . . . . 10-221N961 . . . . . 10-22

1N961A . . . . . 10-221N961B . . . . . 10-221N962 . . . . . 10-221N962A . . . . . 10-221N962B . . . . . 10-221N963 . . . . . 10-221N963A . . . . . 10-221N963B . . . . . 10-221N964 . . . . . 10-22

1N964A . . . . . 10-221N964B . . . . . 10-221N98S . . . . . 10-221N965A . . . . . 10-221N965B . .

.. . 10-22

1N966 . . . . . 10-221N966A . . . . . 10-221N966B . . . . . 10-221N967 . . . . . 10-22

1N967A . . . . . 10-221N967B . . . . . 10-221N968 . . . . . 10-221N968A . . . . . 10-221N968B . . . . . 10-221N969 . . . . . 10-221N969A . . . . . 10-221N969B . . . . . 10-221N970 . . . . . 10-221N970A .

. . . . 10-22

1N970B . . . . . 10-221N971

.. . . . 10-22

1N971A . . . . . 10-221N971B . . . . . 10-221N972 . . . . . 10-221N972A . . . . . 10-221N972B . . . . . 10-221N973 . . . . . 10-221N973A . . . . . 10-221N973B . . . . . 10-22

1N2069A . . . 10-241N2070 . . . . . 10-241N2070A . . . 10-241N2071 . . . . . 10-24

1N2071A . . . 10-241N2175 . . . . . OPTO1N3064 . . . . . 10-26

TYPE NO. SEC-PAGE1N3070 .

. . . . 10-28

1N3506. . . . . 10-30

1N3S07 .. . . . 10-30

1N3S08 . . . . . 10-301N3509 .

.. . . 10-30

1N3510 . . . . . 10-301N3511 . . . . . 10-301N3S12

. . . . . 10-30

1N3513 . . . . . 10-301N3514 . . . . . 10-301N3515 . . . . . 10-301N3516 . . . . . 10-301N3517 . . . . . 10-301N3518 . . . . . 10-301N3S19

. . . . . 10-30

1N3S20. . . . . 10-30

1N3521 . . . . . 10-30

1N3522 . . . . . 10-301N3523 . . . . . 10-301N3524 . . . . . 10-301N3525 . . . . . 10-301N3526 . . . . . 10-301N3S27 . . . . . 10-301N3S28 . . . . . 10-301N3529 . . . . . 10-30

1N3530 . . . . . 10-301N4001

. . . . . 10-32

1N4002 . . . . . 10-321N4003 . . . . . 10-321N4004 . . . . . 10-321N4005 . .

.. . 10-32

1N4008 . . . . . 10-321N4007 . . . . . 10-321N4148

. . . . . 10-34

1N4149. .

. . . 10-34

1N4150. . .

. . 10-36

1N41S1. . . . . 10-38

1N4152 . . . . . 10-381N4163 . . . . . 10-381N4154 . . . . . 10-381N4305 . . . . . 10-401N4444 . . . . . 10-40

1N4446 . . . . . 10-421N4447 . . . . . 10-42

1N4448 . . . . . 10-421N4449 . . . . . 10-421N44S4 . . . . . 10-44

1N4531 . . . . . 10-46

1N4S32 . . . . . 10-461N4533 . . . . . 10-46

TYPE NO. SEC-PAGE1N4534 10-461N4S36 . 10-46

1N4606 . 10-48

1N4607 . 10481N4608 . 10-481N4727 . 10-50

1N4728 . 10-521N4728A 10-521N4729 . 10-521N4729A 10-521N4730 . 10-521N4730A 10-521N4731 10-52

1N4731A 10-521N4732 . 10521N4732A 10-521N4733 . 10-521N4733A 10-521N4734 . 10-521N4734A 10-521N4735 . 10-521N4735A 10-521N4736 . 10-521N4736A 10-521N4737 . 10-52

1N4737A 10-521N4738 . 10-521N4738A 10-521N4739 . 10-521N4739A 10-521N4740 . 10-52

1N4740A 10-521N4741 . 10-52

1N4741A 10-521N4742

.10-52

1N4742A 10-521N4743 . 10-521N4743A 10-521N4744 . 10-521N4744A 10-521N474S . 10-52

1N4745A 10-521N4746 . 10-521N4746A 10-521N4747 . 10-521N4747A 10-521N4748 . 10-521N4748A 10-521N4749 . 10-521N4749A 10-52

OPTO Refer to The Optoelectronics Data Book for Design Engineers, First Edition (CC405).



TYPE NUMBER INDEX

TYPE NO.

1N47S0 .1N4750A1N4761 .1N4751A1N4752 .1N4752A1N4938 .1N5226 .1N5228A1NS226B1NS227 .1N6227A1N5227B1N5228 .1NB228A1N5228B1N5229 .1N5229A1N5229B1NS230 .1N5230A1NB230B1N5231 .1N6231A1N5231B1N5232 .1NS232A1NB232B1N5233 .1N6233A1NS233B1NS234 .1NS234A1N6234B1NS23S .1NS23SA1NS23BB1NB236 .1NB236A1N6238B1N5237 .1NB237A1NS237B1N6238

.

1NB238A1NB23SB1NS239 .1NS239A1N5239B1NS240 .

SEC-PAGE10-52

10-62

10-52

10-52

10-52

10-62

10-64

10-66

10-58

10-56

10-66

10-56

10-56

10-56

10-56

10-56

10-56

10-66

10-56

10-66

10-58

10-66

10-66

10-66

10-56

10-56

10-66

10-56

10-56

10-56

10-56

10-56

10-56

10-56

10-56

10-56

10-56

10-66

10-56

10-56

10-66

10-56

10-56

10-66

10-66

10-56

10-56

10-56

10-56

10-66

TYPE NO. SEC-PAGE1N5240A .... 10-561N6240B 10-561N5241 . 10-56

1N6341A 10-661N5241B 10-56

1N5242 . 10-56

1N5242A 10-561N5242B 10-56

1N5243 . 10-56

1N5243A 10-561N5243B 10-561N6244 . 10-561N5244A 10-561N5244B 10-56

1N6246 . 10-561N5245A 10-561N5245B 10-56

1N5246 . 10-561N5246A 10-561N5246B 10-561N5247 . 10-56

1N5247A 10-561N5247B 10-56

1N5248 . 10-561N5248A 10-561N5248B 10-56

1N5249 . 10-561N5249A 10-561N5249B 10-561N5250 . 10-561N5250A 10-661N5250B 10-561N6251 . 10-56

1N5251A 10-561N5251B 10-56

1N5252 . 10-561N62S2A 10-561N5262B 10-56

1N5253 . 10-561N5253A 10-561N5253B 10-561N5264 . 10-561N5254A 10-561N5254B 10-561NS2S5 . 10-561N5255A 10-561N5255B 10-56

1N5256 . 10-561N5256A 10-561N5256B 10-56

*Not shown in this data book but still available from Texas Instruments.OPTO Refer to The Optoelectronics Data Book for Design Engineers, F


1N5257A .... 10-561N5257B .... 10-56

1N5722 OPTO1N5723 OPTO1N5724 OPTO1N5725 OPTO1M5768 10-591N5769 10-591N5770 10-591N5771 10-59

1N5772 10-59

1N5773 10-591N5774 10-591N5775 10-592N117 4-1

2N118 4-22N118A 4-32N119 4-42N120 4-52N243 4-62N244 42N263 *

2N264 *

2N332 4-82N333 4-92N334 4-102N335 4-112N336 4-122N337 4-132N338 4-142N339 4-152N340 4-152N341 4-152N342 4-152N343 4-152N389 POWER2N424 POWER2N478 *2N479

2N480 *2N489 4-202N489A 4-202N489B 4-202N490 4-202N490A 4-202N490B 4-202N491 4-202N491A 4-202N491B 4-20

irst Edition (CC-405).POWER Refer to The Power Semiconductor Data Book for Design Engineers, First Edition (CC-404)


POST OFFICE BOX 9012 DALLAS. TEXAS 7S222

0-3

TYPE NUMBER INDEX

TYPE NO. SEC-PAGE2N492 4-202N492A 4-202N492B 4-202N493 4-202N493A 4-202N493B 4-202N497 .

.. . . POWER

2N498 . . . . . POWER2N541 . . *

2N542 . . . . . *2N543 . . . . . *

2N656 ..

. . . POWER2N657 . . . . . POWER2N696 . . . . . 4-232N697 . . . . . 4-232N698 . . . . . 4-252N699 . . . . . 4-252N717

. . . . .4-27

2N718. .

. . . 4-27

2N718A 4-272N719 4-31

2N719A 4-312N720 4-312N720A 4-312N721 . . . . . 4-34

2N722 . . . . . 4-34

2N730 . . . . . 4-362N731 . . . . . 4-36

2N849. . . . .

4-38

2N850. .

. . . 4-38

2N851 . . . . . 4-40

2N852 . . . . . 4-402N870 .

.. . . 4-42

2N871 . . . . . 4-42

2N910 . . . . . 4-442N911

. .. . . 4-44

2N912 . . . . . 4-44

2N917 . . . . . 4-46

2N918 . . . . . 4-48

2N929 . . . . . 4-522N930 . . . . . 4-522N956 . . . . . 4-542N997

. . . . .4-56

2N998 . . . . . 4-57

2N999 ..

. . .4-59

2N1047 POWER2N1047A .... POWER2N1047B .... POWER2N1048 POWER2N1048A .... POWER

Not shown in this data book but still available from Texas Instruments.POWER Refer to The Power Semiconductor Data Book for Design Engineers, First Edition (CC-404).

TYPE NO. SEC-PAGE2N1048B . . . POWER2N1049 . . . . . POWER2N1049A . . . POWER2N1049B . . . POWER2N1050 . . . . . POWER2N1050A . . . POWER2N1050B . . . POWER2N1131

. . . . .4-61

2N1132 . . . . . 4-612N1149 . . . . . 4-632N1150 . . . . . 4-632N1151 . . . . . 4*32N1152 . . . . . 4-63

2N1153 . . . . . 4-632N1154 . . . . . 4-65

2N1155 . . . . . 4-65

2N1156 . . . . . 4-65

2N1276 . . ... *

2N1277 . . *

2N1278 . .

2N1279. .

... *

2N1420 . . . . . 4-682N1507 . . . . . 4-682N1566

. . .. 4-70

2N1586 . . ..."

2N1587 . . *

2N1588 . . ... *

2N1589 . . ... *

2N1590 . . ... *2N1591 . . ... *

2N1592. .

... *

2N1593 . . *

2N1594 . . ... *

2N1595 . . . . . POWER2N1596

. .. . . POWER

2N1597 . . . . . POWER2N1598 . . . . . POWER2N1599 . . . . . POWER2N1613 . . . . . 4-712N1671 . . . . . 4-73

2N1671A . . . 4-732N1671B . . . 4-73

2N1711 . . . . . 4-75

2N1714 . . . . . POWER2N1715 . . . . . POWER2N1716 . . . . . POWER2N1717 . . . . . POWER2N1718

. . . .. POWER

2N1719 . . . . . POWER2N1720 . . . . . POWER

TYPE NO. SEC-PAGE2N1721 POWER2N1722 POWER2N1722A .... POWER2N1723 POWER2N1724 POWER2N1724A .... POWER2N1725 POWER2N1889 4-772N1890 4-772N1893 4-772N1936 POWER2N1937 POWER2N1973 4-79

2N1974 4-79

2N1975 4-792N2060 4-81

2N2102 4-832N2102A .... 4-832N2150 POWER2N2151 POWER2N2160 4-862N2192 4-882N2192A .... 4-882N2193 4-882N2193A .... 4-88

2N2194 4-88

2N2194A .... 4-882N2217 4-93

2N2218 4-932N2218A .... 4-932N2219 4-932N2219A .... 4-932N2220 4-932N2221 4-93

2N2221A .... 4-93

2N2222 4-932N2222A .... 4-93

2N2223 4-1052N2223A .... 4-1052N2243 4-1072N2243A .... 4-1072N2270 4-1122N2303 4-114

2N2386 4-116

2N2386A .... 4-1162N2387 4-117

2N2388 4-1172N2389 4-1192N2390 4-1192N2393 4-121

0-4 Texas InstrumentsINCORPORATEDPOST OFFICE BOX 5012 DALLAS. TEXAS 75222

TYPE NUMBER INDEX

TYPE NO. SEC-PAGE

2N2394 4-1212N2395 4-1232N2396 4-1232N2432 4-1252N2432A .... 4-1252N2453 4-1272N2483 4-1292N2484 4-1292N2497 4-1312N2498 4-1312N2499 4-1312N2500 4-1312N2537 4-1322N2538 4-1322N2539 4-1322N2540 4-1322N2586 4-1362N2604 4-1382N2605 4-1382N2608 4-1422N2609 4-1422N2639 4-1432N2640 4-1432N2641 4-143

2N2642 4-1432N2643 4-1432N2644 4-1432N2646 4-1452N2647 4-1452N2802 4-1472N2803 4-1472N2804 4-1472N2805 4-1472N2806 4-1472N2807 4-1472N2880 POWER2N2894 4-1492N2904 4-1512N2904A .... 4-1512N2905 4-1512N2905A .... 4-1512N2906 4-1512N2906A .... 4-1512N2907 4-1512N2907A .... 4-1512N2913 4-1632N2914 4-1632N2915 4-1632N2915A .... 4-1632N2916 4-163

POWER Refer to The Power Semiconductor

TYPE NO. SEC-PAGE2N2916A .... 4-1632N2917 4-1632N2918 4-1632N2919 4-1632N2919A .... 4-1632N2920 4-1632N2920A .... 4-1632N2944 4-1672N2944A .... 4-1672N2945 4-1672N2945A .... 4-1672N2946 4-1672N2946A .... 4-1672N2972 4-169

2N2973 4-1692N2974 4-169

2N2975 4-1692N2976 4-1692N2977 4-169

2N2978 4-1692N2979 4-1692N2987 POWER2N2988 POWER2N2989 POWER2N2990 POWER2N2991 POWER2N2992 POWER2N2993 POWER2N2994 POWER2N3001 POWER2N3002 POWER2IM3003 POWER2N3004 POWER2N3005 POWER2N3006 POWER2N3007 POWER2N3O08 POWER2N3012 4-1732N3015 4-1752N3021 POWER2N3022 POWER2N3023 POWER2N3024 POWER2N3025 POWER2N3026 POWER2N3036 4-1772N3037 4-1792N3038 4-1792N3039 4-1812N3040 4-181

Data Book for Design Engineers, First Edition (CC-404).

TYPE NO. SEC-PAGE2N3043 4-1832N3044 4-1832N3045 4-1832N3046 4-1832N3047 4-1832N3048 4-1832N3049 4-1852N3050 4-1852N3051 4-185

2N3052 4-1872N3053 4-1892N3055 POWER2N3114 4-1902N3117 4-1922N3244 4-1942N3245 4-1942N3250 4-1992N3250A .... 4-1992N3251 4-199

2N3251A .... 4-1992N3252 4-2012N3253 4-2012N3263 POWER2N3264 POWER2N3265 POWER2N3266 POWER2N3329 4-2032N3330 4-2032N3331 4-203

2N3332 4-2032N3347 4-2042N3348 4-2042N3349 4-2042N3350 4-2042N3351 4-2042N3352 4-2042N3418 POWER2N3419 POWER2N3420 POWER2N3421 POWER2N3439 POWER2N3440 POWER2N3444 4-2082N3458 4-2102N3459 4-2102N3460 4-2102N3467 4-2122N3468 4-2122N3485 4-2152N3485A .... 4-215


POST OFFICE BOX 5012 DALLAS, TEXAS 75222

0-5

TYPE NUMBER INDEX


2N3486A .... 4-2152N3494 4-2172N3495 4-2172N3496 4-2172N3497 4-2172N3502 4-2232N3503 4-2232N3504 4-2232N3505 4-2232N3551 POWER2N3552 ..... POWER2N3554 4-2292N3570 4-2332N3571 4-2332N3572 4-2332N3576 4-2372N3S83 POWER2N3584 POWER2N3S85 POWER2N3634 4-2392N3635 4-2392N3636 4-2392N3637 4-2392N3680 4-2482N3702 4-2502N3703 4-2502N3704 4-2522N3705 4-2S22N3706 4-2522N3707 4-2542N3708 4-2542N3709 4-2542N3710 4-2542N3711 4-254

2N3713 POWER2N3714 POWER2N3715 POWER2N3716 POWER2N3719 POWER2N3720 POWER2N3724 4-2562N3724A .... 4-2562N3725 4-2562N3725A .... 4-2562N3734 4-2622N3735 4-2622N3771 POWER2N3772 POWER2N3789 POWER

TYPE NO. SEC-PAGE2N3790 POWER2N3791 POWER2N3792 POWER2N3798 4-2652N3799 4-2652N3806 4-2672N3807 4-2672N3808 4-2672N3809 4-2672N3810 4-2672N3811 4-2672N3819 4-2702N3820 4-2712N3821 4-2722N3822 4-2722N3823 4-2722N3824 4-2722N3829 4-2782N3838 4-2802N3846 POWER2N3847 POWER2N3902 POWER2N3903 4-2832N3904 4-2832N3905 4-2862N3906 4-2862N3909 4-2892N3909A .... 4-2892N3962 4-2902N3963 4-2902N3964 4-2902N3965 4-2902N3966 4-2932N3970 4-2952N3971 4-2952N3972 4-2952N3980 4-2982N3993 4-3002N3993A .... 4-3002N3994 4-3002N3994A .... 4-3002N3996 POWER2N3997 POWER2N3998 POWER2N3999 POWER2N4000 POWER2N4001 POWER2N4O02 POWER2N4003 POWER2N4004 POWER

TYPE NO. SEC-PAGE2N4005 POWER2N4013 4-3022N4014 4-3022N4026 4-3052N4027 4-3052N4028 4-3052N4029 4-3052N4030 4-3052N4031 4-3052N4032 4-3052N4033 4-3052N4058 4-3112N4059 4-3112N4060 4-3112N4061 4-311

2N4062 4-3112N4091 4-313

2N4092 4-3132N4093 4-3132N4104 4-3162N4123 4-3182N4124 4-3182N4125 4-321

2N4126 4-3212N4138 4-324

2N4220 4-3262N4220A .... 4-3262N4221 4-326

2N4221A .... 4-3262N4222 4-326

2N4222A .... 4-3262N4223 4-3282N4224 4-3282N4240 POWER2N4252 4-3322N4253 4-3322N4260 4-3332N4261 4-333

2N4300 POWER2N4301 POWER2N4391 4-337

2N4392 4-3372N4393 4-3372N4398 POWER2N4399 POWER2N4402 4-3402N4403 4-3402N4409 4-3432N4410 4-3432N4416 4-345

POWER Refer to The Power Semiconductor Data Book for Design Engineers, First Edition (CC-404).



TYPE NUMBER INDEX

TYPE NO. SEC-PAGE2N4416A 4-3452N4423 4-3482N4851 4-3502N4852 4-3502N4853 4-3502N4864 4-3522N4855 4-3522N4856 4-3552N4856A .... 4-3552N4857 4-3552N4857A .... 4-3552N4858 4-3552N4858A .... 4-3552N4859 4-3552N4859A .... 4-3552N4860 4-3552N4860A .... 4-3552N4861 4-3552M4861A .... 4-3552N4891 4-3592N4892 4-3592N4893 4-3592N4894 4-3592N4901 POWER2N4902 ..... POWER2N4903 POWER2N4904 POWER2N4905 POWER2N4906 POWER2N4913 POWER2N4914 POWER2N4915 POWER2N4947 4-3612N4948 4-3612N4949 4-3612N4996 4-3632N4997 4-3632N4998 POWER2N4999 POWER2N5000 POWER2NS001 POWER2N5002 POWER2N5003 POWER2NS003 POWER2N6004 POWER2N5005 POWER2N5038 POWER2N5039 POWER2N5045 4-3652NS046 4-365

TYPE NO. SEC-PAGE2N5047 4-3652N5058 4-3672N5059 4-3672N5060 POWER2N5061 POWER2N5062 POWER2N5063 POWER2N5064 POWER2N5067 POWER2N5068 POWER2N5069 POWER2N5086 4-3712N5087 4-3712N5147 POWER2N5148 POWER2N5149 POWER2N5150 POWER2N5151 POWER2N5152 POWER2N5153 POWER2N5154 POWER2N5157 POWER2N5209 4-3752N5210 4-3752N5219 4-3772N5220 4-3792N5221 4-3812N5222 4-3832N5223 4-3852N5225 4-3872N5226 4-3892N5227 4-3912N5241 POWER2N5245 4-3932N5246 4-3932N5247 4-3932N5248 4-3962N5301 ..... POWER2N5302 ..... POWER2N5303 POWER2N5332 4-3972N5333 POWER2N5358 4-4002N53S9 44002W5360 4-4002N5361 4-4002N5362 4-4002N5363 4-4002N5364 4-4002N5384 POWER

TYPE NO. SEC-PAGE2N5385 POWER2N5386 POWER2N5387 POWER2N5388 POWER2N5389 POWER2N5390 POWER2N5397 4-4032N5398 4-4052N5399 4-4072N5400 4-4142N5401 4-414

2N5447 4-4162N5448 4-4162N5449 4-4182N5450 4-4182N5451 4-418

2N5460 4-4202N5461 4-4202N5462 44202N5525 4-4222N5526 4-4222N5545 44232N5546 4-4232N5547 4-4232N5549 4-4252N5550 4-4272N5551 4-4272N5671 POWER2N5672 POWER2N5683 POWER2N5684 POWER2N5685 POWER2N5686 POWER2N5758 POWER2N5759 POWER2N5760 POWER2N5867 POWER2N5868 POWER2N5869 POWER2N5870 POWER2N5871 POWER2N5872 POWER2N5873 POWER2N5874 POWER2N5875 POWER2N5876 POWER2N5877 POWER2N5878 POWER2N5879 POWER2N5880 POWER

POWER Rafar to The Power Semiconductor Data Book for Design Engineers, First Edition (CC-404).


POST OFFICE BOX 5012 DALLAS, TEXAS 75322

0-7

TYPE NUMBER INDEX

TYPE NO. SEC-PAGE2N5881 POWER2N5882 POWER2NS883 POWER2N5884 POWER2N5885 POWER2N5886 POWER2N5938 POWER2NS939 POWER2N5940 POWER2NS949 +4292N5950 4-4292N5951 4-429

2NS952 4-4292N5953 4-4292N6116 4-433

2N6117 4-4332N6118 4-4332N6127 POWER2N6128 POWER2N6270 POWER2N6271 POWER2N6272 POWER2N6273 POWER2N6322 POWER2N6323 POWER2N6324 POWER2N6325 POWER2N6326 POWER2N6327 POWER2N6328 POWER2N6329 POWER2N6330 POWER2N6331 POWER2N6332 POWER2N6333 POWER2N6334 POWER2N6335 POWER2N6336 POWER2N6337 POWER2N6449 4-437

2N6450 4-437

2N64S1 4-441

2N6452 44412N6453 4-441

2N6454 4-441

2N6461 4-443

2N6462 44432N6463 4-443

2N6464 4-4433N34 4-445

POWER Refer to The Power Semiconductor

TYPE NO. SEC-PAGE3N35 4-4463N74 4-4473N75 4-4473N76 4-4473N77 4-4473N78 4-4473N79 4-4473N108 4-4503N109 4-4503N110 4-4503N111 4-450

3N128 4-4523N153 4-454

3N155 4-4563N155A 4-4563N156 4-4563N156A 4-4563N157 4-4563N157A 4-4563N158 4-4563N158A 44563N160 4-4603N161 44623N163 4-4643N164 44643N169 44673N170 44673N171 4-467

3N174 44693N201 44713N202 44713N203 44713M204 44763N205 44763N206 44763N207 44843N208 44863N211 44883N212 44883N213 44883N214 34953N215 44963N216 44953N217 4495A5T404 4-17A5T404A .... 4-17A5T2192 .... 4-91A5T2193 .... 4-91A5T2222 .... 4-101

A5T2243 .... 4-110

Deta Book for Design Engineers, First Edition (CC404).

TYPE NO. SEC-PAGEA5T2604 . . . . 4-140A5T2605 . . . . 4-140A5T2907 . . . . 4-160A5T3391 . . . . 4-206A5T3391A . . . . 4-206A5T3392 . . . . 4-206A5T3496 . . . . 4-220A5T3497 . . . . 4-220A5T3504 . . . . 4-226A5T3505 . . . . 4-226A5T3565 . . . . 4-231A5T3571 . . . . 4-235A5T3572 . . . . 4-235A5T3638 . . . . 4-242A5T3638A . . . . 4-242A5T3644 . . . . 4-245

A5T3645 . . . . 4-245A5T3707 . . . . 4-254

A5T3708 . . . . 4-254

A5T3709 . . . . 4-254

A5T3710 . . . . 4-254

A5T3711 . . . 4-254

A5T3821 . . . . 4-275

A5T3822 . . . . 4-275A5T3823 . . . . 4-275

A5T3824 . . . . 4-275

A5T3903 . . . . 4-283

A5T3904 . . . . 4-283

A5T3905 . . . . 4-286A5T3906 . . . . 4-286A5T4026 . . . . 4-308A5T4027 . . . . 4-308

A5T4028 . . . . 4-308A5T4029 . . . . 4-308A5T4058 . . . . 4-311A5T4059 . . . . 4-311A5T4060 . . . . 4-311A5T4061 . . . . 4-311

A5T4062 . . . . 4-311

A5T4123 . . . . 4-318

A5T4124 . . . . 4-318

A5T4125 . . . . 4-321A5T4126 . . . . 4-321A5T4248 . . . . 4-330A5T4249 . . . . 4-330A5T4250 . . . . 4-330

A5T4260 . . . . 4-335A5T4261 . . . . 4-335

A5T4402 . . . . 4-340A5T4403 . . . . 4-340

0-8 Texas InstrumentsINCORPORATEDPOST OFFICE BOX SO12 DALLAS, TEXAS 75222

TYPE NUMBER INDEX

TYPE NO. SEC-PAGEA5T4409 . . . 4-343AST4410 . . . 4-343A5T5058 .

.. 4-369

AST5059. . . 4-369

A5T5086. . .

4-371

AST5087 . . . 4-371A5T5172 . . . 4-373A5T5209

. . . 4-37S

A5T5210 . . . 4-375A5T5219 . . . 4-377A5T5220 . . . 4-379A5T5221 . . . 4-381AST5223 .

. . 4-385

A5T522S . . . 4-387A5T5226 . . . 4-389A5T5227 . . . 4-391ASTS400 . . . 4-414A5T5401 . . . 4-414AST5460 . . . 4-420A5T5461 . . . 4-420AST5462 . . . 4-420AST5550 . . . 4-427AST5551

. . . 4-427

A5T6116. . .

4-435

A5T6117 .. .

4-435

A5T6118. . . 4-435

A5T6449. . . 4-439

AST64S0 . . . 4-439A6T5222

. . . 4-383

A7T3391. . . 4-206

A7T3391A . . . 4-206A7T3392 . . . 4-206A7TS172 . . . 4-373A7T6027

. . . 4-431

A7T6028 . . . 4-431A8T404 . . . . 4-17A8T404A . . . 4-17A8T3391 .

. .4-206

A8T3391A . ..

4-206

A8T3392 . . . 4-206A8T3702 . . . 4-250A8T3703 . . . 4-250A8T3704 . . . 4-252A8T3705 . . . 4-252A8T3706

. . . 4-252

A8T3707 . . . 4-254A8T3708

. . . 4-254

A8T3709 . . . 4-254A8T3710

. . . 4-254

A8T3711 . . . 4-254

TYPE NO.

A8T4026A8T4027A8T4028A8T4029A8T4058A8T4059A8T4060A8T4061A8T4062A8T5172D2T918

.

D2T2218D2T2218AD2T2219D2T2219AD2T2904D2T2904AD2T2905D2T2905AG129G130H11

H35H38H60H61H62LS400LS600Q2T2222Q2T2905Q2T3244Q2T3725TGI/8TI51

TI52

TI53

TI54

TI55

TI56

TI57

TI58

TI59

TI60

TI71

TI72

TI73

TI74

TI75

TI145A SERIES*Not shown in this data book but still available from Texas Instruments.OPTO Refer to The Optoelectronics Data Book for Design Engineers, FPOWER Refer to The Power Semiconductor Data Book for Design Engineers, First Edition (CC-404).

SEC-PAGE.

4-308

.4-308

.4-308

.4-308

. 4-311

.4-311

.4-311

. 4-311

.4-311

.4-373

.4-50

.4-97

.4-97

.4-97

.4-97

.4-154

.4-154

.4-154

.4-154

.10-64

. 10-66

. OPTO

. OPTO

.OPTO

.OPTO

. OPTO

. OPTO

. OPTO

. OPTO

.4-103

. 4-157

. 4-197

.4-260

.11-1

.10-68

. 10*8

.10-68

. 10-68

.10-68

.10-68

.10-68

. 10-68

.10-68

. 10*8

. 10*9

. 10*9

. 10*9

. 10-69

. 10-69

. POWER

irst Edition (CC-405).

TYPE NO. SEC-PAGETI480 *

TI481 '

TI482 *

TI483 *

TI484 *

TI486 POWERTI487 POWERTI492 *

TI493 *

TI494 *

TI495 *

TI496 *

TI550 10-71TI551 10-71

TI1131-1136

SERIES .... POWERTI1151-1156

SERIES .... POWERTIC SERIES . . . POWERTID17 10-72TID18 10-72TID19 10-72TID20 10-72TID21A 10-76TID22A 10-76TID23A 10-76TID24A 10-76TID25A 10-76TID26A 10-76TID29A 10-76TID30A 10-76TID31 10*2TID32 10*2TID33 10-82TID34 10-83TID35 10-82TID36 10*2TID37 10*2TID38 10*3TID39 10-83TID40 10*5TID41 10*5TID42 10*5TID43 10*5TID44 10*5TID45 ..... 10*6TID121 10-76

TID122 10-76TID123 10-76TID124 10-76


post oFFice aox soi2 DALLAS. TEXAS 75222

0-9

TYPE NUMBER INDEX

TYPE NO. SEC-PAGETIP SERIES . . . POWERTIS25 4-497

TIS26 4-497

TIS27 4-497

TIS37 4-499

TIS38 4-499

TIS43 4-501

TIS58 4-503

TIS59 4-503

TIS62A 4-505TIS63A 4-505TIS64A 4-505

TIS69 4-507

TIS70 4-507

TIS73 4-509

TIS74 4-509

TIS75 4-509

TIS84 4-511

TIS86 4-514

TIS87 4-514

TIS90 4-516

TIS90M 4-516TIS91 4-516

TIS91M 4-516TIS92 4-516

TIS92M 4-516TIS93 4-516

TIS93M 4-516TIS94 4-518

TIS95 4-518

TIS96 4-518

TIS97 4-518

TIS98 4-518

TIS99 4-518

TIS100 4-520

TIS101 4-520

TIS105 4-522

TIS108 4-525

TIS109 4-528

TIS110 4-528

TIS111 4-528

TIS112 4-533

TIS125 4-536

TIS126 4-538

TIS128 4-541

TIS129 4-543

TIS133 4-545

TIS134 4-545

TIS135 4-545

TIS136 4-545

OPTO-Refer to Tha Optoelectronics Data Book for Design Engineers, First Edition (CC-405).POWER Refer to The Power Semiconductor Data Book for Design Engineers, First Edition (CC-404).

TYPE NO SEC-PAGETID125 . . 10-76

TID126 . . 10-76TID129 . . 10-76TID130 . . 10-76TID131 . . 10-76

TID132 . . 10-76TID133 . . 10-76TID134 . . 10-76TID135N . . 10-90TID136N

. .10-90

TID139F . . 10-90TID139N . . 10-90TID140F . . 10-90TID140N

. .10-90

TID141F . . 10-90TID141N

. . 10-90

TID142F . . 10-90

TID142N . . 10-90TID143F . . 10-90TID143N . . 10-90TID144F . . 10-90

TID144N . . 10-90

TID381 . . 10-96

TID382 . . 10-96TID383 . . 10-96

TID384 . . 10-96TID385 . . 10-96TID777 . . 10-98

TID778 . . 10-98

TIDM155F . . 10-100TIDM155J . . 10-100TIDM166F . . 10-100TIDM166J . . 10-100TI0M168F . . 10-100TIDM168J . . 10-100TIDM185F . . 10-100TIOM185J . . 10-100TIDM186F . . 10-100TIDM186J . . 10-100TIDM255F . . 10-100TIDM2S5J . . 10-100TIDM266F . . 10-100TIDM266J . . 10-100TIDM268F . . 10-100TIDM268J . . 10-100TIDM285F

.. 10-100

TIDM285J . . 10-100TIDM286F . . 10-100TIDM286J . . 10-100TILSERI1ES . . OPTO

TYPE NO. SEC-PAGETIS137 4-548

TIS138 4-548

TIV21 10-105

TIV22 10-105

TIV23 10-105TIV24 10-107TIV2S 10-107TIV306 10-109TIV307 10-109TIV308 10-109TIXL SERIES . . OPTOTM1/8 11-1

0-10 Texas InstrumentsINCORPORATEDPOST OFFICe BOX 5012 DALLAS. TeXAS 75222

Glossary

INDEX

Page

General

Terms and Definitions 1" 1

Letter Symbols, Terms, and Definitions 1-3

Signal Diodes and Rectifiers

Terms and Definitions 1"7

Letter Symbols, Terms, and Definitions I'7

Voltage-Regulator and Voltage-Reference Diodes

Terms and Definitions 1_12


Voltage-Variable-Capacitance Diodes

Terms and Definitions 1 "14


Multifunction Transistors

Terms and Definitions 1-1 5

Letter Symbols, Terms, and Definitions 1-1 7

Unijunction Transistors

Terms and Definitions 1'27

Letter Symbols, Terms, and Definitions 1"27

Field-Effect Transistors

Terms and Definitions 1'29


Standards Documents ''*'

GLOSSARYGENERAL

GLOSSARYIntroduction

This glossary contains letter symbols, abbreviations, terms, and definitions commonly used with semiconductor devices.Most of the information was obtained from JEDEC Publication No. 77. That document has over-riding authority whereany conflict may occur.

GENERALTerms and Definitions

Term Definitionanode The electrode from which the forward current flows within the

device.

anode ^j cathode > forward currentbipolar transistor A transistor that utilizes charge carriers of both polarities.

breakdown A phenomenon occuring in a reverse-biased semiconductorjunction, the initiation of which is observed as a transition from aregion of high small-signal resistance to a region of substantiallylower small-signal resistance for an increasing magnitude ofreverse current.

breakdown region A region of the volt-ampere characteristic beyond the initiationof breakdown for an increasing magnitude of reverse current.

breakdown voltage The voltage measured at a specified current in a breakdownregion. (Ref MIL-S-19500D Par. 20.3)

blocking A state of a semiconductor device or junction which essentiallyprevents the flow of current.

cathode The electrode to which the forward current flows within thedevice. For diagram, see "anode".

electrode An electrical and mechanical contact to a region of a semi-conductor device.

forward bias The bias which tends to produce current flow in the forwarddirection.

"-^T l> current flow

forward direction The direction of current flow which results when the p-typesemiconductor region is at a positive potential relative to then-type region. (Ref IEEE 253)

open-circuit A circuit in which halving the magnitude of the terminatingimpedance does not produce a change in the parameter beingmeasured greater than the required accuracy of the measurement.(Ref MIL-S-19500D Par. 20.8)

rectifying junction A junction in a semiconductor device which exhibits asym-metrical conductance.


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GLOSSARYGENERAL

Term Definition

reverse bias The bias which tends to produce current flow in the reverse

direction.

~^M-+ current flow

reverse direction The direction of current flow which results when the n-typesemiconductor region is at a positive potential relative to the

p-type region.

semiconductor device A device whose essential characteristics are governed by the flowof charge carriers within a semiconductor.

semiconductor diode A semiconductor device having two terminals and exhibiting anonlinear voltage-current characteristic; in more restricted usage,

a semiconductor device which has the asymmetrical voltage-

current characteristic exemplified by a single p-n junction.

(Ref IEEE 270)

semiconductor junction A region of transition between semiconductor regions of different

(commonly referred to electrical properties (e.g., n-n+, p-n, p-p+ semiconductors), or

as junction) between a metal and a semiconductor.

short-circuit A circuit in which doubling the magnitude of the terminatingimpedance does not produce a change in the parameter being

measured that is greater than the required accuracy of the

measurement. (Ref MIL-S-19500D Par. 20.16)

small-signal A signal which when doubled in magnitude does not produce achange in the parameter being measured that is greater than the

required accuracy of the measurement. (Ref MIL-S-19500D

Par. 20.17)

static value A non-varying value or quantity measured at aspecified

fixed point, or the slope of the line from the origin to the

operating point on the appropriate characteristic curve. (Ref

IEEE 255 Par. 2.2.1)

terminal An externally available point of connectionto one or more

electrodes.

thermal resistance (steady-state) The temperature difference between twospecified points or

regions divided by the power dissipation under conditions of

thermal equilibrium. (Ref IEEE 223)

transient thermal impedance The change of temperature difference between twospecified

points or regions at the end of a time interval divided by the step-

function change in power dissipation at the beginning of the same

time interval causing the change of temperature difference. (Ref

IEEE 223)

transistor An active semiconductor device capableof providing power

amplification and having three or more terminals. (Ref IEC

147-0 Par. 0-2.8)


GLOSSARYGENERAL

Letter Symbols, Terms, and Definitions

Symbol Term

F or NF* average noise figure*

ForNF*

average noise factor*

spot noise figure*

or

spot noise factor*

Definition

The ratio of ( 1 ) the total output noise power within adesignated output frequency band when the noisetemperature of the input termination(s) is at thereference noise temperature. To, at all frequencies to(2) that part of (1) caused by the noise temperatureof the designated signal-input termination within adesignated signal-input frequency band.

The ratio of (1) the total output noise power per unitbandwidth (spectral density) at a designated outputfrequency when the noise temperature of the inputtermination(s) is at the reference noise temperature.To. at all frequencies to (2) that part of (1 ) caused bythe noise temperature of the designated signal-inputtermination at a designated signal-input frequency.

F

Rfl (formerly 6)

R0CA

RflJA(formerly 0j_a)

RflJC(formerly 0j-c)

Sf or S21

forward current, dc

noise current,

equivalent input

reverse current, dc

thermal resistance

thermal resistance,

case-to-ambient

thermal resistance,

junction-to-ambient

thermal resistance,junction-to-case

forward transmissioncoefficient

The dc current that flows through a semiconductorjunction in the forward direction.

The noise current of an ideal current source (having asource impedance equal to infinity) in parallel withthe input terminals of the device that, together withthe equivalent input noise voltage, represents thenoise of the device.

The dc current that flows through a semiconductorjunction in the reverse direction.

Refer to thermal resistance (steady-state), page 1-2.

The thermal resistance (steady-state) from the devicecase to the ambient.

The thermal resistance (steady-state) from thesemiconductor junction (s) to the ambient.

The thermal resistance (steady-state) from thesemiconductor junction (s) to a stated location on thecase.

The ratio of the voltage at the output port to thevoltage incident on the input port with the outputport terminated in a purely resistive referenceimpedance equal to the impedance of the source ofthe incident voltage.

NF and NF abbreviations are often used for symbols F and F; however, the symbols F and F are preferred.TThese quantities may be expressed logarithmically in decibels (dB).


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GLOSSARYGENERAL

Symbolsj or si 1

Soors22

sr orsi2

TA

TC

Term

input reflection

coefficient

output reflection

coefficient

reverse transmission

coefficient

free-air temperature

or

ambient temperature

case temperature

virtual junctiontemperature

'stg storagetemperature

Definition

The ratio of the voltage reflected from the input port

to the voltage incident on the input port with the

output port terminated in a purely resistive reference

impedance equal to the impedance of the source of

the incident voltage.

The ratio of the voltage reflected from the output

port to the voltage incident on the output port with

the input port terminated in a purely resistive

reference impedance equal to the impedance of the

source of the incident voltage.

The ratio of the voltage at the input port to the

voltage incident on the output port with the input

port terminated in a purely resistive reference

impedance equal to the impedance of the source of

the incident voltage.

The air temperature measured below a device, in an

environment of substantially uniform temperature,

cooled only by natural air convection and not

materially affected by reflective and radiant surfaces.

(Ref MIL-S-19500D Par. 20.20.1)

The temperature measured at a specified location on

the case of a device. (Ref MIL-S-19500D

Par. 20.20.2)

A temperature representing the temperature of thejunction(s) calculated on the basis of a simplified

model of the thermal and electrical behavior of the

semiconductor device.

NOTE: This term "virtual junction temperature" is

taken from IEC standards. It is particularly applicable

to multijunction semiconductors and is used in this

publication to denote the temperature of the active

semiconductor element when required in

specifications and test methods. The term "virtual

junction temperature" is used interchangeably with

the term "junction temperature" in this publication.

The temperature at which the device, without any

power applied, is stored. (Ref MIL-S-19500D

Par. 20.20.3)

14 Texas InstrumentsINCORPORATEDPOST OFFICE BOX 5012 DALLAS, TEXAS 79223

Symbol

TO

Term

noise temperature

reference noise temperature

GLOSSARYGENERAL

Definition

The uniform physical absolute temperature (kelvin)at which a network (and all its sources, if a multiport)would have to be maintained if it (and its sources)were passive in order to make available (or deliver)the same random noise power per unit bandwidth(spectral density) at a given frequency as is actuallyavailable (or delivered) from the network.

A specified absolute temperature (kelvin) to beassumed as a noise temperature at the input ports ofa network when calculating certain noise parameters,and for normalizing purposes. When the referencenoise temperature is 290 K, it is considered to be thestandard reference noise temperature.

delay time

toff

ton

tp

fall time

turn-off time

tum-on time

pulse time

rise time

storage time

The time interval from the point at which the leadingedge of the input pulse has reached 10 percent of itsmaximum amplitude to the point at which theleading edge of the output pulse has reached 10percent of its maximum amplitude. (RefMIL-S-19500O Par. 20.11)

The time duration during which the trailing edge of apulse is decreasing from 90 to 10 percent of itsmaximum amplitude. (Ref MIL-S-19500DPar. 20.12)

The sum of ts + tf.

The sum of td + tf.

The time duration from the point on the leading edgewhich is 90 percent of the maximum amplitude tothe point on the trailing edge which is 90 percent ofthe maximum amplitude. (Ref MIL-S-19500DPar. 20.15)

The time duration during which the leading edge of apulse is increasing from 10 to 90 percent of itsmaximum amplitude. (Ref MIL-S-19500 Par. 20.13)

The time interval from a point 90 percent of themaximum amplitude on the trailing edge of the inputpulse to a point 90 percent of the maximumamplitude on the trailing edge of the output pulse.(Ref MIL S 19500D Par. 20.14)


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GLOSSARYGENERAL

Symbol Term

pulse average time

Definition

The time duration from the point on the leading edge

which is 50 percent of the maximum amplitude to apoint on the trailing edge which is 50 percent of the

maximum amplitude. (Ref MIL-S-19500DPar. 20.10)

. 90%..OUTPUT PULSE

DIAGRAM ILLUSTRATING PULSE TIME SYMBOLOGY

VF

VR

forward voltage, dc

noise voltage,

equivalent input

reverse voltage, dc

The dc voltage across a semiconductor junctionassociated with the flow of forward current.

The noise voltage of an ideal voltage source (having a

source impedance equal to zero) in series with the

input terminals of the device that, together with the

equivalent input noise current, represents the noise of

the device.

The dc voltage applied to a semiconductor junctionwhich causes the current to flow in the reverse

direction.

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GLOSSARYSIGNAL DIODES AND RECTIFIERS

SIGNAL DIODES AND RECTIFIERSTerms and Definitions

Termsemiconductor rectifier diode

Definition

A semiconductor diode having an asymmetrical voltage-currentcharacteristic, used for rectification, and including its associatedhousing, mounting, and cooling attachments if integral with it.

Graphic symbol for a semiconductor rectifier diode and asemiconductor signal diode (Ref ANS Y32.2):

-envelope optional

Anode 1 H 1 Cathode^W^Catho.semiconductor signal diode A semiconductor diode having an asymmetrical voltage-current

characteristic and used for signal detection.

For graphic symbol, see above.

Letter Symbols, Terms, and Definitions(For illustration of the following currents refer to diagrams on page 1-10)

Symbol Term

'F(RMS). If,F. 'F(AV).F. IFM

forward current

(see table, page 1-11)

'FRM forward current,repetitive peak

"fsm forward current,surge peak

'0 average rectifiedforward current

IR(RMS). Ir.'R. lR(AV).'R. IRM

reverse current


R(REC).'RM(REC)

reverse recovery

current


'rrm reverse current,

repetitive peak

Irsm reverse current,surge peak

Texas InstruhINCORPORATED

Definition

The respective value of current that flows through asemiconductor diode or rectifier diode in the forwarddirection.

The peak value of the forward current including allrepetitive transient currents.

The maximum (peak) surge forward current having aspecified waveform and a short specified time inter-val.

The value of the forward current averaged over a fullcycle of half-sine-wave operation at 60 Hz with aconduction angle of 180.

The respective value of current that flows through asemiconductor diode or rectifier diode in the reversedirection.

The transient component of reverse currentassociated with a change from forward conduction toreverse voltage.

The maximum (peak) repetitive instantaneous reversecurrent.

The maximum (peak) surge reverse current having aspecified waveform and a short specified time inter-val.

1-7

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Symbol

PF. PF(AV).PF. PFM

PR.PRlAV).PR. PRM

Qs

Termforward powerdissipation


reverse power dissipation


stored charge

Re

Tj

tfr

thermal resistance

junction temperature

forward recovery time

tr

trr

pulse time

rise time

reverse recovery time

Definition

The power dissipation resulting from the flow of the

respective forward current.

The power dissipation resulting from the flow of the

respective reverse current.

The total amount of charge recovered from a diode

minus the capacitive component of that charge whenthe diode is switched from a specified conductive

condition to a specified non-conductive condition

with other circuit conditions (as described in EIA-

JEDEC Suggested Standard No. 1) optimized torecover the largest possible amount of charge.

Seepages 1-2 and 1-3.

Seepage 1-4.

The time required for the current or voltage to

recover to a specified value after instantaneous

switching from a stated reverse voltage condition to a

stated forward current or voltage condition in a given

circuit.

SPECIFIED'RECOVERYVOLTAGE

L RECOVERY^~ TIME

TIME-

See pages 1-5 and 1-6.


The time required for the current or voltage to

recover to a specified value after instantaneous

switching from a stated forward current condition to

a stated reverse voltage or current condition in a given

circuit.

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Symboltw

Termpulse average time

V(BR).V(BR)

breakdown voltage (dc,instantaneous total value)

VF(RMS), Vf,V F. Vp(AV).VF, VFM

forward voltage(see table, page 1-11)

VR(RMS). V r ,VR, Vr(AV),VR, Vrm

reverse voltage


Vrwm working peakreverse voltage

Vrrm repetitive peakreverse voltage

VRSM nonrepetitivepeak reverse

voltage

Definition

Seepage 1-6.

The value of voltage at which breakdown occurs.

The voltage drop in a semiconductor diode resultingfrom the respective forward current.

The voltage applied to a semiconductor diode whichcauses the respective current to flow in the reversedirection.

The maximum instantaneous value of the reversevoltage, excluding all transient voltages, which occursacross a semiconductor rectifier diode.

The maximum instantaneous value of the reversevoltage, including all repetitive transient voltages butexcluding all nonrepetitive transient voltages, whichoccurs across a semiconductor rectifier diode.

The maximum instantaneous value of the reversevoltage including all nonrepetitive transient voltagesbut excluding all repetitive transient voltages, whichoccurs across a semiconductor rectifier diode.


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DIAGRAMS ILLUSTRATING SYMBOLS FOR DIODE CURRENTS AND VOLTAGES

I. FORWARD CURRENT AND VOLTAGE:

Maximum (peak) repetitive value

Maximum (peak) surge value

T'F

/-i-

7/Ifrm

Instantaneous total value

Maximum (peak) total value

TVVFM

_J

.L

Tlfsm

Vf(AV).

Average value, 180 conduction angle,

60 Hz, half sine wave

- Average value withalternating component

onIFRM Maximum (peak)

repetitive value

A

Average value with

alternating component

'FM" Maximum (peak). total value

II. REVERSE CURRENT AND VOLTAGE:

t, J t

Instantaneous

total value

_4 v ,R^ Average value with

Maximum (peak) repetitive value-^"alternating component

VR(AV)_4

VRRM

Maximum (peak)surge value

T/VrsM

__1Maximum (peak) total value

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GLOSSARYSIGNAL DIODES AMD RECTIFIERS

TABLE OF SYMBOLS FOR CURRENT, POWER, AND VOLTAGE

Total

RMSValue

RMS Valueof

Alternating

Component

DC Value,No

Alternating

Component

DC Value,With

Alternating

Component

Instantaneous

Total

Value

Maximum(Peak)Total

ValueForward Current

'FIRMS) If 'F 'F(AV) 'F Ifm

Forward Current,Average, 180

Conduction Angle,60-Hz, Half Sine

--

_

'o_

Wave

Forward Current,Repetitive Peak

~

frm

Forward Current,Surge Peak

~

(fsm

Reverse Current'R(RMS) Ir IR 'R(AV) 'R IRM

Reverse Recovery

Current-

--

-

'R(REC) IRM(REC)

Forward PowerDissipation

-- PF PF(AV) PF PFM

Reverse Power

Dissipation-

- PR PR(AV) PR prm

Forward Voltage VF(RMS) Vf vf VF(AV) VF vFmReverse Voltage VR

GLOSSARYVOLTAGE-REGULATOR AND VOLTAGE-REFERENCE DIODES

VOLTAGE-REGULATOR AND VOLTAGE-REFERENCE DIODES

Terms and Definitions

Term Definition

anocte The electrode to which the reverse current flows within the

device when it is biased to operate in its breakdown region.

cathode The electrode from which the reverse current flows within the

device when it is biased to operate in its breakdown region.

voltage-reference diode A diode which is normally biased to operate in the breakdownregion of its voltage-current characteristic and which develops

across its terminals a reference voltage of specified accuracy,

when biased to operate throughout a specified current and

temperature range. (Ref IEC 147-0, Par. 0-2.3)

Graphic symbol for voltage-reference diode (Ref ANS Y32.2)

reverse current ^-^Cathode Hj4"1 Anode

envelope optional ^"^

voltage-regulator diode A diode which is normally biased to operate in the breakdownregion of its voltage-current characteristic and which develops

across its terminals an essentially constant voltage throughout a

specified current range. (Ref IEC 147-0, Par. 0-2.4)

Graphic symbol for voltage-regulator diode. (Ref ANS Y32.2)

reverse current > /^"-^.

CathodeM^ J

Anode

envelope optional *^^


(For illustration of the following currents and voltages refer to diagrams on page 1-13)

Symbol Term Definition

forward current, dc The value of dc current that flows through the diodeIF

IR

in the forward direction.

reverse current, dc The value of dc current that flows through the diode

in the reverse direction.

I_ regulator current. The value of dc reverse current that flows through the

,Z

'

K reference current (dc, diode when it is biased tooperate in its breakdown

ZM dc near breakdown knee, region and at apoint on its voltage-current character-

dc maximum-rated current) istic as follows:

\Z- a specified operating point between lz and

IZM

IZK : a specified point near the breakdown knee

'ZM : a specified point based on the maximum-ratedpower.

junction temperature See page 1-4.

112 Texas InstrumentsI* INCORPORATEDNCORPORATEDPOST OFFICE BOX 5012 DALLAS, TEXAS 75222

Symbol

VF

Vr

V2M

zz.

zzk.

zzm

GLOSSARYVOLTAGE-REGULATOR AND VOLTAGE-REFERENCE DIODES

Term

forward voltage, dc

reverse voltage, dc

regulator voltage,

reference voltage

(dc, dc at maximum-rated current)

regulator impedance,reference impedance,(small-signal, at lz,at lZK. at lZM )

Definition

The voltage drop in the diode, resulting from the dcforward current.

The voltage applied to the diode which causes the dccurrent to flow in the reverse direction.

The value of dc voltage across the diode when it isbiased to operate in its breakdown region and at aspecified point in its voltage-current characteristic asfollows:

VZ : at 'Z (see previous page)VZM : at Izm (see previous page)

The small-signal impedance of the diode when it isbiased to operate in its breakdown region and at aspecified point in its voltage-current characteristic asfollows:

zz : at lz (see previous page)zzk : at Izk (see previous page)zzm : at 'ZM (see previous page)

BREAKDOWN KNEE

DIAGRAM ILLUSTRATING SYMBOLS FOR CURRENTS AND VOLTAGES

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GLOSSARYVOLTAGE-VARIABLE-CAPACITANCE DIODES

VOLTAGE-VARIABLE-CAPACITANCE DIODES

Terms and Definitions

Term Definition

voltage-variable- A two-terminal semiconductor device in which use is made of the

capacitance diode property that its capacitance varies with the appliedvoltage,

(varactor diode)

tuning diode A voltage-variable-capacitance diode used for rf tuning. Thisincludes functions such as automatic frequency control (AFC)

and automatic fine tuning (AFT).


Symbol Term

GLOSSARYMULTUUNCTION TRANSISTORS

MULTIJUNCTION TRANSISTORSTerms and Definitions

Tern Definition1,886 *8

'

b' A region which lies between an emitter and a collector of a

transistor and into which minority carriers are injected. (Ref. 60IRE 28.S1)

collector (C, c)* A region through which a primary flow of charge carriers leavesthe base. (Ref. 60 IRE 28.S1)

emitter (E,e)* A region from which charge carriers that are minority carriers inthe base are injected into the base. ( Ref. 60 I RE 28.S1

)

junction, collector A semiconductor junction normally biased in the reversedirection, the current through which can be controlled by theintroduction of minority carriers into the base. (Ref. 60IRE28.S1)

junction, emitter A semiconductor junction normally biased in the forwarddirection to inject minority carriers into the base. (Ref. 60IRE28.S1)

saturation A base-current and a collector-current condition resulting in aforward-biased collector junction.

transistor, multifunction A transistor having a base and two or more junctions.Typical Graphic Symbols: (Ref. ANS Y32.2)

NOTE: In the graphic symbols, the envelope is optional if noelement is connected to the envelope.

N-P-N TRIODE P-N-P TRIODE

CCollector

^^^ Collector

>-(C)

Emitter>^,r

Emitter

N-P-N, DOUBLE-BASE P-N-P DOUBLE-EMITTER

.Collector

^_^ Co(|ectorBase Ba /

Emitter Emitter^^Emitteror

Collector

EmitterEmitter

References to bate, collector and emitter symbolism


Term

transistor, programmable unijunction

Definition

A P-N-P-N thyristor that, together with two external resistors,can generate a current-voltage characteristic similar to that of a

unijunction transistor. The unijunction parameters n. rjjB. 'P.and ly (see pages 1-27 and 1-28) can be varied by selection of

the values of the two resistors.

ANODE. A 6

CATHODE, K

BASE 2, B2

;R2

GATE, G

R1

Interbase Resistance rgB ** R1 +R2R1

Intrinsic Standoff Ratio n


Letter Symbols, Terms, and DefinitionsSymbol Term

Ccb.

Cce,

Ceb

Cjbo.Cjeo

Qbs.Cjes

cobo.Coeo

Cobs.

Coes

Crbs.

Cres

Ctc,

Cte

interterminal

capacitance

(collector-to-base,

collector-to-emitter,

emitter-to-base)

open-circuit inputcapacitance (common-!common-emitter)

short-circuit inputcapacitance (common-tcommon-emitter)

open-circuit output

capacitance (common-lcommon-emitter)

short-circuit outputcapacitance (common-lcommon-emitter)

short-circuit reverse

transfer capacitance(common-base,common-emitter)

depletion-layer

capacitance(collector, emitter)

Definition

The direct interterminal capacitance between theterminal indicated by the first subscript and thereference terminal indicated by the second subscript,with the respective junction (collector-base, collector-emitter, emitter-base) reverse-biased and with theremaining terminal (emitter, base, collector) open-circuited to dc, but ac-connected to the guardterminal of a three-terminal bridge.

This capacitance includes the interelement capaci-tances plus capacitance to the shield where the shieldis connected to one of the terminals under measure-ment.

The capacitance measured across the input terminals(emitter and base, base and emitter) with thecollector open-circuited for ac. (Ref IEEE 255)

The capacitance measured across the input terminals(emitter and base, base and emitter) with thecollector short-circuited to the reference terminal forac. (Ref IEEE 255)

The capacitance measured across the output terminals(collector and base, collector and emitter) with theinput open-circuited to ac. (Ref IEEE 255)

The capacitance measured across the output terminals(collector and base, collector and emitter) with thethird terminal short-circuited to the referenceterminal for ac. (Ref IEEE 255)

The capacitance measured from the output terminalto the input terminal with the respective referenceterminal (base or emitter) and the case, (unlessconnected internally to another terminal) connectedto the guard terminal of a three-terminal bridge andwith the device biased into the active region.

The part of the capacitance across the (collector-base,emitter-base) junction that is associated with itsdepletion layer.

NOTE: This capacitance is a function of the totalpotential difference across the depletion layer. (RefI EC 147-0 Par. 11-4.8,4.9)


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SymbolForF

fhfb.

fhfe

GPB.GpE

Gpb.Gpe

GTB.GTE

Gtb.Gte

hFB.hFE

Termnoise figure, average or spot

small-signal short-

circuit forward

current transfer ratio

cutoff frequency

(common-base,common-emitter)

maximum frequencyof oscillation

transition frequency

or

frequency at whichsmall-signal forward

current transfer

ratio (common-emitter)extrapolates to unity

frequency of unity

current transfer ratio

large-signal insertion

power gain (common-base, common-emitter)

small-signal insertion

power gain (common-base, common-emitter)

large-signal transducer

power gain (common-base,common-emitter)

small-signal transducer

power gain (common-base,common-emitter)

static forward current

transfer ratio (common-base, common-emitter)

Definition

See page 1-3.

The lowest frequency at which the modulus (magni-

tude) of the small-signal short-circuit forward current

transfer ratio is 0.707 of its value at a specified low

frequency (usually 1 kHz or less). (Ref IEEE 255)

The maximum frequency at which a transistor can bemade to oscillate under specified conditions.

NOTE: This approximates to the frequency at which

the maximum available power gain has decreased tounity. (Ref IEC 147-0 Par. 11-4.17)

The product of the modulus (magnitude) of the

common-emitter small-signal short-circuit forward

current transfer ratio, |hfe |, and the frequency of

measurement when this frequency is sufficiently highso that |hfe | is decreasing with a slope of approxi-mately 6 dB per octave. (Ref IEEE 255)

The frequency at which the modulus (magnitude) ofthe common-emitter small-signal short-circuit forward

current transfer ratio, |hfe |, has decreased to unity.(Ref IEC 147-0 Par. 11-4.19)

The ratio, usually expressed in dB, of the signal

power delivered to the load to the large-signal power

delivered to the input.


power delivered to the load to the small-signal power

delivered to the input.


power delivered to the load to the maximum large-signal power available from the source.


power delivered to the load to the maximum small-signal power available from the source.

The ratio of the dc output current to the dc input

current. (Ref MIL-S-19500D Par. 30.28)

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Symbolhfb.

hfe

hib.

Termsmall-signal short-

circuit forwardcurrent transfer

ratio (common-base,common-emitter)

small-signal short-

circuit input impedance(common-base,common emitter)

GLOSSARYMULTIJUNCTION TRANSISTORS

DefinitionThe ratio of the ac output current to the small-signalac input current with the output short-circuited to ac.(Ref MIL-S-19500D Par. 30.20)

The ratio of the small-signal ac input voltage to the acinput current with the output short-circuited to ac.(Ref MIL-S-19500D Par. 30.24)

nie(imag) imaginary part of theor small-signal short-

lm(hje ) circuit input impedance(common-emitter)

nie(real) real part of the small-or signal short-circuit

Re(hje) input impedance.(common-emitter)

"ob. small-signal open-hoe circuit output

admittance(common-base.common-emitter)

noe(imag) imaginary part of theor small-signal open-circuit

Im(hoe) output admittance.(common-emitter)

noe(real) real part of the small-or signal open-circuit

Re(hoe) output admittance.(common-emitter)

"rb. small-signal open-hre circuit reverse voltage

transfer ratio

(common-base.common-emitter)

b. current, dcic. (base-terminal.

E collector-terminal.

emitter-terminal)

b. current, rms value ofalternating component(base-terminal,col lector-term inal,

emitter-terminal)

The ratio of the out-of-phase (imaginary) componentof the small-signal ac base-emitter voltage to the acbase current with the collector terminal short-circuited to the emitter terminal for ac.

The ratio of the in-phase (real) component of thesmall-signal ac base-emitter voltage to the ac basecurrent with the collector terminal short-circuited tothe emitter terminal for ac.

The ratio of the ac output current to the small-signalac output voltage applied to the output terminal,with the input open-circuited to ac. (RefMIL-S-19500D Par. 30.15)

The ratio of the ac collector current to the out-of-phase (imaginary) component of the small-signalcollector-emitter voltage with the base terminal open-circuited to ac.

The ratio of the ac collector current to the in-phase(real) component of the small-signal collector-emittervoltage with the base terminal open-circuited to ac.

The ratio of the ac input voltage to the small-signal acoutput voltage with the input open-circuited to ac.(Ref MIL-S-19500D Par. 30.18)

The value of the dc current into the terminalindicated by the subscript.

The root-mean-square value of alternating currentinto the terminal indicated by the subscript.


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Symbol Term


Symbol Term'CEO- collector cutoff

current, dc, with(base open.

'CER. resistance betweenbase and emitter.

ices. base short-circuited

to emitter.

'CEV. voltage betweenbase and emitter.

CEX circuit betweenbase and emitter)

\Definition

The dc current into the collector terminal when it isbiased in the reverse direction* with respect to theemitter terminal and the base terminal is (as indicatedby the last subscript letter as follows)

:

O = open-circuited.R = returned to the emitter terminal through a

specified resistance.

S = short-circuited to the emitter terminal.V = returned to the emitter terminal through a

specified voltage.

X = returned to the emitter terminal through aspecified circuit.

(Ref IEEE 255)

*For these parameters, the collector terminal isconsidered to be biased in the reverse directionwhen it is made positive for N-P-N transistors ornegative for P-N-P transistors with respect to theemitter terminal.

'E1E2(off|

EBO

EC(ofs)

emitter cutoff

current

emitter cutoff

current, dc,

collector open

emitter-collector

offset current

The current into the emitter-1 terminal of a double-emitter transistor when the emitter-1 terminal isbiased with respect to the emitter-2 terminal and thetransistor is in the off state (the collector-base diodeis not forward-biased) with specified termination ofthe collector and base terminals.

The dc current into the emitter terminal when it isbiased in the reverse direction with respect to thebase terminal and the collector terminal is open-circuited. (Ref IEEE 255)

The external short-circuit current between theemitter and collector when the base-collector diode isreverse biased.

"ECS emitter cutoffcurrent, dc,

base short-circuited

to collector

The dc current into the emitter terminal when it isbiased in the reverse direction* with respect to thecollector terminal and the base terminal is short-circuited to the collector terminal. (Ref IEEE 255)

'For this parameter the emitter terminal is

considered to be biased in the reverse directionwhen it is made positive for N-P-N transistors ornegative for P-N-P transistors with respect to thecollector terminal.

Im(yje) See preferred symbol yje(imag)


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1-21


SymbolIm(Voe)

NForNF*

P|B.PIE

Pib.

Pie

POB-POE

Pob.

Poe

R0

sfb r S21 b.sfe>"S21e

Srbr si2b.sre orsi2e

Term

noise current,

equivalent input

noise figure, average or spot

large-signal input

power (common-base,common-emitter)

small-signal input


large-signal output


small-signal output


PT total nonreactive

power input to all

terminals

rb'Cc collector-base

time constant

rCE(sat) saturation resistancecollector-to-emitter

Re(yje)

Re(voe)

i"e1e2(on) small-signal emitter-

emitter on-state

resistance

thermal resistance

forward transmission coefficient

(common-base, common-emitter)

reverse transmission coefficient

(common-base, common-emitter)

Definition

See preferred symbol Voe(imag)

See page 1-3.

See page 1-3.

The product of the large-signal ac input current andvoltage with the common reference terminal circuit

configuration.

The product of the small-signal ac input current andvoltage with the common reference terminal circuit

configuration.

The product of the large-signal ac output current and

voltage with the common reference terminal circuit

configuration.

The product of the small-signal ac output current andvoltage with the common reference terminal circuit

configuration.

The sum of the products of the dc input currents and

voltages, i.e.,

VBE'lB + VCE'lCorVbe-'e + vcb-'c

The product of the intrinsic base resistance andcollector capacitance under specified small-signal

conditions.

The resistance between the collector and emitter

terminals for the saturation conditions specified. (Ref

IEEE 255)

See preferred symbol Vie(real)

See preferred symbol yoe(real)

The small-signal resistance between the emitterterminals of a double-emitter transistor when thebase-collector diode is forward-biased.


| The respective forward or reverse transmission

^ coefficient with the transistor in the indicated

configuration. See pages 1-3 and 1-4.

NF and NF abbreviations are often used for symbols F and F; however, the symbols F and F are preferred.

1-22 Texas InstrumentsINCORPORATEDPOST OFFICE BOX 5012 . DALLAS, TEXAS 75232

Symbol Termsib or si lb. input reflection coefficient ^sjeor sile (common-base, common-emitter)

sob or 22b. output reflection coefficientSoo or *22e (common-base, common-emitter) ^J

Tj junction temperature

td delay time

tf fall time

toff turn-off time

ton turn-on time

lP pulse time

V rise time

ts storage time

tw pulse average time

VBB. supply voltage, dcvc& (base, collector.VEE emitter)

Vbc. voltage, dc or averagevbe. (base-to-collector.VCB. base-to-emitter.

VCE. collector-to-base.

VEB- collector-to-emitter.

vec emitter-to-base,

emitter-to-collector)

vbc. voltage, instantaneous

Vbe. value of alternating

vcb. componentvce. (base-to-collector.

veb. base-to-emitter.

vec collector-to-base,

collector-to-emitter,

emitter-to-base,


V(BR)CBO breakdown voltage.(formerly BVcbo) collector-to-base.

emitter open


Definition

The respective input or output reflection coefficientwith the transistor in the indicated configuration. Seepage 1-4.

Seepage 1-4.



The sum of ts + tf. See pages 1-5 and 1-6.

The sum of td + tf. See pages 1-5 and 1-6.




Seepage 1-6.

The dc supply voltage applied to a circuit connectedto the reference terminal.

The dc voltage between the terminal indicated by thefirst subscript and the reference terminal (stated interms of the polarity at the terminal indicated by thefirst subscript).

The instantaneous value of ac voltage between theterminal indicated by the first subscript and thereference terminal.

The breakdown voltage between the collectorterminal and the base terminal when the collectorterminal is biased in the reverse direction with respectto the base terminal and the emitter terminal isopen-circuited. (Ref IEEE 255)


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1-23


SymbolV(BR)CEO(formerly BVcEO)

V(BR)CER(formerly BVcER)

V(BR)CES(fromerly BVcES*

V(BR)CEV(formerly BVcEV)

V(BR)CEX(formerly BVcEX)

Term

breakdown voltage,collector-to-emitter with

(base open,

resistance betweenbase and emitter,


to emitter,

voltage betweenbase and emitter,

circuit betweenbase and emitter)

\Definition

The breakdown voltage between the collector

terminal and the emitter terminal when the collectorterminal is biased in the reverse direction* with

respect to the emitter terminal and the base terminal

is (as indicated by the last subscript letter as follows):

= open-circuited.

R = returned to the emitter terminal through a


S = short-circuited to the emitter terminal.

V = returned to the emitter terminal through aspecified voltage.


(Ref IEEE 255)

*For these parameters, the collector terminal is

considered to be biased in the reverse direction

when it is made positive for N-P-N transistors ornegative for P-N-P transistors with respect to the

emitter terminal.

V(BR)E1E2

V(BR)EBO(formerly BVeBO>

V(BR)ECO(formerly BVeCQ)

emitter-emitter

breakdown voltage

breakdown voltage,emitter-to-base,

collector open

breakdown voltage,em itter-to-col lector,

base open

vCB(fD- dc open-circuit voltage

VCE(fl). (floating potential)

VEB(fl). (collector-to-base.

VEC(fl) col lector-to-emitter.emitter-to-base.


The breakdown voltage between the emitter

terminals, of a double-emitter transistor, with

specified termination between collector and base.

The breakdown voltage between the emitter and base

terminals when the emitter terminal is biased in thereverse direction with respect to the base terminal

and the collector terminal is open-circuited. (Ref

IEEE 255)

The breakdown voltage between the emitter and

collector terminals when the emitter terminal isbiased in the reverse direction* with respect to the

collector terminal and the base terminal is open-

circuited.

*For this parameter the emitter terminal is

considered to be biased in the reverse direction

when it is made positive for N-P-N transistors ornegative for P-N-P transistors with respect to the

collector terminal.

The dc open-circuit voltage (floating potential)

between the terminal indicated by the first subscript

and the reference terminal when the remaining

terminal is biased in the reverse direction with respect

to the reference terminal. (Ref IEEE 255)



SymbolVcbo

VcE(ofs)

VcE(sat)

VCEO.

VCER.

VCES.

VCEV.

VCEX

VEBO

VEC(ofs)

|VE1E2(ofs)|

|AVE1E2(ofs)lAIB

I^VE1E2(ofs)lATA

Vn

Termcollector-to-base

voltage, dc, emitteropen

collector-emitter

offset voltage

saturation voltage,

collector-to-emitter

collector-to-emitter

voltage, dc, with(base open,

resistance betweenbase and emitter,


to emitter,

voltage between baseand emitter,

circuit between baseand emitter)

emitter-to-base

voltage, dc,

collector open

emitter-collector

offset voltage

magnitude of theemitter-emitter offsetvoltage

magnitude of thechange in offsetvoltage with basecurrent

magnitude of thechange in offsetvoltage withtemperature

noise voltage,

equivalent input

\

DefinitionThe dc voltage between the collector terminal and thebase terminal when the emitter terminal is open-circuited.

The open-circuit voltage between the collector andemitter terminals when the base-emitter diode isforward-biased.

The dc voltage between the collector and the emitterterminals for specified saturation conditions. (RefIEEE 255)

The dc voltage between the collector terminal and theemitter terminal when the base terminal is (asindicated by the last subscript letter as follows):

= open circuited.R - returned to the emitter terminal through a


S = short-circuited to the emitter terminal.V= returned to the emitter terminal through a

specified voltage.


The dc voltage between the emitter terminal and thebase terminal with the collector terminal open-circuited.

The open-circuit voltage between the emitter andcollector when the base-collector diode is forward-biased.

The absolute value of the open-circuit voltagebetween the two emitters of a double-emittertransistor when the base-collector diode is forward-biased.

The absolute value of the algebraic differencebetween the emitter-emitter offset voltages of adouble-emitter transistor at two specified basecurrents.

The absolute value of the algebraic differencebetween the emitter-emitter offset voltages of adouble-emitter transistor at two specified ambienttemperatures.

Seepage 1-6.

Texas InstrumentsINCORPORATED 1-25

POST OFFICE BOX 5012 DALLAS, TEXAS 7S222


Symbol

VRT

Vfb.

Vfe

Vib.

Vie

Vie(imag)or

Im(vje)

Vie(real)or

Re(yje)

Vob.

Voe

Voe(imag)or

Im(yoe)

Yoe(real)or

Re(yoe)

Vrb-

Yre

Term

reach-through (punch-through)voltage

small-signal short-

circuit forward-

transfer admittance(common-base,common-emitter)

small-signal short-

circuit input admittance

(common-base,common-emitter)

imaginary part of

the small-signal

short-circuit input

admittance(common-emitter)

real part of the

small-signal short-

circuit input admittance

(common-emitter)

small-signal short-

circuit output

admittance(common-base,common-emitter)

imaginary part of

the small-signal

short-circuit output


real part of the

small-signal short-

circuit output


small-signal short-

circuit reverse

transfer admittance(common-base,common-emitter)

Definition

That value of reverse collector-to-base voltage at

which the space-charge region of the collector-base

junction extends to the space-charge region of theemitter-base junction. (Ref IEEE 255)

The ratio of rms output current to rms input voltage

with the output short-circuited to ac.

The ratio of rms input current to rms input voltage


The ratio of rms input current to the rms out-of-

phase (imaginary) component of the input voltage


The ratio of rms input current to the rms in-phase

(real) component of the input voltage with the

output short-circuited to ac.

The ratio of rms output current to rms output voltage

with the input short-circuited to ac.

The ratio of rms output current to the out-of-phase

(imaginary) component of the rms output voltage

with the input short-circuited to ac.

The ratio of rms output current to the in-phase (real)component of the rms output voltage with the input

short-circuited to ac.

The ratio of rms input current to rms output voltage. with the input short-circuited to ac.

1-26 Texas InstrumentsINCORPORATEDPOST OFFICE BOX 5012 DALLAS. TEXAS 7S222

GLOSSARYUNIJUNCTION TRANSISTORS

UNIJUNCTION TRANSISTORSTerms and Definitions

Term Definition11356

'B

' A region of a semiconductor device into which minority carriersare injected.

emitter (E)* A region from which charge carriers that are minority carriers inthe base are injected into the base. (Ref. 60 IRE 28.S1

)

junction, emitter A semiconductor junction normally biased in the forwarddirection to inject minority carriers into the base. (Ref 60IRE28.S1)

peak point The point on the emitter current-voltage characteristic cor-responding to the lowest current at which dVEBl/dlE = 0.

programmable unijunction transistor See page 1-16.

valley point The point on the emitter current-voltage characteristic corres-ponding to the second lowest current at which dVEBl/dlE = 0.

unijunction transistor A three-terminal semiconductor device having one junction and astable negative-resistance characteristic over a wide temperaturerange.

Graphic symbols for unijunction transistors (Ref. AIMS Y32.2):

N-P (P-Type Base) p-N (N-Type Base)

Texas Instruments Transistor Diode Data Book Text

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