Temperature-Dependent Transient Capacitance in InGaAs/InP-based Diodes Kiril Simov and Tim Gfroerer...
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Transcript of Temperature-Dependent Transient Capacitance in InGaAs/InP-based Diodes Kiril Simov and Tim Gfroerer...
![Page 1: Temperature-Dependent Transient Capacitance in InGaAs/InP-based Diodes Kiril Simov and Tim Gfroerer Davidson College Mark Wanlass NREL Supported by the.](https://reader036.fdocuments.net/reader036/viewer/2022062716/56649dc65503460f94aba0e7/html5/thumbnails/1.jpg)
Temperature-Dependent Transient Capacitance in InGaAs/InP-based Diodes
Kiril Simov and Tim GfroererDavidson CollegeMark Wanlass
NRELSupported by the American Chemical Society – Petroleum Research Fund
![Page 2: Temperature-Dependent Transient Capacitance in InGaAs/InP-based Diodes Kiril Simov and Tim Gfroerer Davidson College Mark Wanlass NREL Supported by the.](https://reader036.fdocuments.net/reader036/viewer/2022062716/56649dc65503460f94aba0e7/html5/thumbnails/2.jpg)
Motivation: Thermophotovoltaics
Photovoltaic
Cell
Heat Source
Blackbody Radiator
ThermalRadiation
BlackbodyRadiation
![Page 3: Temperature-Dependent Transient Capacitance in InGaAs/InP-based Diodes Kiril Simov and Tim Gfroerer Davidson College Mark Wanlass NREL Supported by the.](https://reader036.fdocuments.net/reader036/viewer/2022062716/56649dc65503460f94aba0e7/html5/thumbnails/3.jpg)
Experimental Setup
Computer with LabVIEW
Temp Controller
Pulse GeneratorCryostat with sample
Digital Scope(Tektronix)
(1)(2)
(3)
(4)
(5)
Oxford77K
Agilent
Capacitance meter (Boonton)
![Page 4: Temperature-Dependent Transient Capacitance in InGaAs/InP-based Diodes Kiril Simov and Tim Gfroerer Davidson College Mark Wanlass NREL Supported by the.](https://reader036.fdocuments.net/reader036/viewer/2022062716/56649dc65503460f94aba0e7/html5/thumbnails/4.jpg)
P-N Junction Depletion Layer with Bias
Depletion Layer With Bias
Depletion Layer
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P N+
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![Page 5: Temperature-Dependent Transient Capacitance in InGaAs/InP-based Diodes Kiril Simov and Tim Gfroerer Davidson College Mark Wanlass NREL Supported by the.](https://reader036.fdocuments.net/reader036/viewer/2022062716/56649dc65503460f94aba0e7/html5/thumbnails/5.jpg)
Typical Capture Data –Dependence on Pulse Length
-200 0 200 400 600 800
1E-3
0.01
0.1
Temp: 77KPulse Length:
10 s 30 s 100 s 200 s
Cap
acita
nce
Cha
nge
(a.u
.)
Time (s)
![Page 6: Temperature-Dependent Transient Capacitance in InGaAs/InP-based Diodes Kiril Simov and Tim Gfroerer Davidson College Mark Wanlass NREL Supported by the.](https://reader036.fdocuments.net/reader036/viewer/2022062716/56649dc65503460f94aba0e7/html5/thumbnails/6.jpg)
Capture Analysis
0 200 400 600-8
-7
-6
-5
-4
-3
avg
=111 +/- 2 s
T = 77K, Bias:-0.1V steady state-0.3V reverse bias
blue
= 109 s
red
=113 s
Ln (
Am
plitu
de o
f Tra
nsie
nt)
(a.
u.)
Pulse Length (us)
DNv
1
Holes: = 2.5 x 10-20 cm2
Electrons: = 7.5 x 10-21
cm2
Capture cross-section
![Page 7: Temperature-Dependent Transient Capacitance in InGaAs/InP-based Diodes Kiril Simov and Tim Gfroerer Davidson College Mark Wanlass NREL Supported by the.](https://reader036.fdocuments.net/reader036/viewer/2022062716/56649dc65503460f94aba0e7/html5/thumbnails/7.jpg)
-400 0 400 800 1200 1600
0.0
0.1
0.2
0.3
0.4Temp: 77K
700s pulse Exp Fit
Cfree
Ctrapped
Cap
acita
nce
Cha
nge
(a.u
.)
Time (s)
Number of Traps
DF
TT N
C
CN
~ 7 x 1015 cm-3
![Page 8: Temperature-Dependent Transient Capacitance in InGaAs/InP-based Diodes Kiril Simov and Tim Gfroerer Davidson College Mark Wanlass NREL Supported by the.](https://reader036.fdocuments.net/reader036/viewer/2022062716/56649dc65503460f94aba0e7/html5/thumbnails/8.jpg)
Typical Escape data – Dependence on Temperature
-100 0 100 200 300 400 500 600 700 800
-9
-6
-3
0
= 33 s = 51 s
= 123 s
L
n(
C )
(a
.u.)
Time(s)
77K 146K 156K
![Page 9: Temperature-Dependent Transient Capacitance in InGaAs/InP-based Diodes Kiril Simov and Tim Gfroerer Davidson College Mark Wanlass NREL Supported by the.](https://reader036.fdocuments.net/reader036/viewer/2022062716/56649dc65503460f94aba0e7/html5/thumbnails/9.jpg)
Escape Analysis
~ trap depth
75 80 85 90 954
6
8
10
12
Avg Ea: 0.30 +/- 0.02 eV
Escape Rate ~ A * e-Ea / kT
Ln (
Esc
ape
Rat
e) (
s-1)
Energy 1/kT (eV-1)
Bias ~ 0V -1V -2V
![Page 10: Temperature-Dependent Transient Capacitance in InGaAs/InP-based Diodes Kiril Simov and Tim Gfroerer Davidson College Mark Wanlass NREL Supported by the.](https://reader036.fdocuments.net/reader036/viewer/2022062716/56649dc65503460f94aba0e7/html5/thumbnails/10.jpg)
Conclusions A deep level has been detected The effective trap cross-section is ~10-20 cm2
The trap concentration is ~ 1016 cm-3
The depth of the level is ~ 0.30 eV Our results are consistent with sub-bandgap PL
from similar structures. Web links:
This talk: http://webphysics.davidson.edu/faculty/thg/talks-posters/MAR-04.pptPL poster: http://webphysics.davidson.edu/faculty/thg/talks-posters/SESAPS-03.ppt
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Device Structure
p+ layer
n layerjunction