Technical Data - NXP Semiconductors · Electrical Characteristics MBC13916 Technical Data, Rev. 2.2...
Transcript of Technical Data - NXP Semiconductors · Electrical Characteristics MBC13916 Technical Data, Rev. 2.2...
© Freescale Semiconductor, Inc., 2005, 2006. All rights reserved.
Freescale SemiconductorTechnical Data
Freescale reserves the right to change the detail specifications as may be required to permit improvements in the design of itsproducts.
Document Number: MBC13916/DRev. 2.2, 05/2006
MBC13916
Package InformationPlastic Package
Case 1404(SOT-343R)
(Scale 2:1)
Ordering Information
DeviceDevice Marking or
Operating Temperature Range
Package
MBC13916T11 916 SOT-343R
MBC13916NT11 16N SOT-343R1 Refer to Table 1.
1 IntroductionThe MBC13916 is a cost-effective, high isolation amplifier fabricated with an advanced RF BiCMOS process using the SiGe:C module. It is intended to be a replacement for the MRFIC0916 and is housed in the smaller SOT-343R surface mount package. As with the MRFIC0916, this device is designed for general purpose RF applications, yet has improved high frequency gain and noise figure. On-chip bias circuitry sets the bias point while matching is accomplished off-chip, affording the maximum in application flexibility.
• Usable frequency range = 100 to 2500 MHz• 19 dB typical gain at 900 MHz, VCC = 2.7 V• NFmin (device level) = 0.9 dB @ 900 MHz• NFmin (device level) = 1.9 dB @ 1.9 GHz• 2.5 dBm typical output power at 1.0 dB gain
compression at 900 MHz, VCC = 2.7 V• 45 dB typical reverse isolation (device level) at
900 MHz, VCC = 2.7 V• 4.7 mA typical bias current at VCC = 2.7 V• 2.7 to 5.0 V supply
MBC13916General Purpose SiGe:C RF Cascode Low Noise Amplifier
Contents1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Ordering Information . . . . . . . . . . . . . . . . . . . 23 Electrical Characteristics . . . . . . . . . . . . . . . 24 Noise Parameters . . . . . . . . . . . . . . . . . . . . . 125 Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . 136 Product Documentation . . . . . . . . . . . . . . . . 14
Ordering Information
MBC13916 Technical Data, Rev. 2.2
2 Freescale Semiconductor
• Industry standard SOT-343R package• Device weight = 0.00642 g (typical)• Available only in tape and reel packaging• Available only in a lead free version (device number MBC13916NT1) (Refer to Table 1.)
Figure 1. Functional Block Diagram
2 Ordering InformationTable 1 provides additional details on MBC13916 orderable parts.
3 Electrical Characteristics
Table 1. Orderable Parts Details
Device Operating Temp
Range (TA.)Package Lead Frame
RoHS Compliant
PB-FreeMSL Level
Solder Temp
MBC13916T1 -40° to 85° C Tape and Reel Pb Plate - No - -
MBC13916NT1 -40° to 85° C Tape and Reel Pb Free Yes Yes 1 260° C
Table 2. Recommended Operating Conditions
Characteristic Symbol Min Typ Max Unit
RF Frequency fRF 100 - 2500 MHz
Supply Voltage VCC 2.7 - 5.0 Vdc
Table 3. Maximum Ratings
Ratings Symbol Value Unit
Supply Voltage VCC 6.0 Vdc
RF Input Power PRF 10 dBm
RF Out
RF In
Gnd
Gnd2
1 3
4
(SOT-343R package)
Electrical Characteristics
MBC13916 Technical Data, Rev. 2.2
Freescale Semiconductor 3
Power Dissipation PDIS 100 mW
Supply Current ICC 20 mA
Thermal Resistance, Junction to Case RθJC 400 °C/W
Storage Temperature Range Tstg -65 to 150 °C
Note: Maximum Ratings and ESD1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be
restricted to the limits in the Recommended Operating Conditions and Electrical Characteristics tables.2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) ≤550 V and Machine Model (MM) ≤50 V.
Additional ESD data available upon request.
Table 4. Device Level Characteristics(VCC = 2.7 V, TA = 25° C, measured in S-parameter test fixture, unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Insertion Gainf = 900 MHzf = 1900 MHz
|S21|2
--
16.510
--
dB
Maximum Stable Gain and/or Maximum Available Gain[Note 1]
f = 900 MHzf = 1900 MHz
MSG, MAG
--
24.514.3
--
dB
Minimum Noise Figure [Note 2]f = 900 MHzf = 1900 MHz
NFmin--
0.91.9
--
dB
Output Third Order Intercept Point [Note 3]f = 900 MHzf = 1900 MHz
OIP3--
139
--
dBm
Reverse Isolationf = 900 MHzf = 1900 MHz
|S12|2
--
-45-31
--
dB
Note: 1. Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:
, if K > 1, , if K < 1
2. Device matched for best noise figure.3. Zout matched for optimum IP3.
Table 3. Maximum Ratings
Ratings Symbol Value Unit
MAGS21S12---------- K K
21–±⎝ ⎠
⎛ ⎞= MSGS21S12----------=
Electrical Characteristics
MBC13916 Technical Data, Rev. 2.2
4 Freescale Semiconductor
Figure 2. GUmax versus Frequency Figure 3. Output Power versus Input Power
Figure 4. Output Power versus Input Power Figure 5. Supply Current versus Input Power
Figure 6. Supply Current versus Input Power Figure 7. Minimum Noise Figure and Associated Gain versus Frequency
MAXI
MUM
UNILA
TERA
L GAI
N (d
B)
40
0
f, FREQUENCY (GHz)
VCC = 5.0 V
3.9 V
3.3 V
2.7 V0.5 1.0 1.5 2.0 2.5 3.0
35
30
25
20
15
10
5.0
0
3.9 V
P out, O
UTPU
T PO
WER
(dBm
)
15
-30Pin, INPUT POWER (dBm)
f = 900 MHz
VCC = 5.0 V
3.3 V2.7 V
-25 -20 -15 -10 -5.0 0
10
5.0
0
-5.0
-10
-15
P out, O
UTPU
T PO
WER
(dBm
)
15
-30Pin, INPUT POWER (dBm)
f = 1900 MHzVCC = 5.0 V
3.9 V
2.7 V3.3 V
-25 -20 -15 -10 -5.0 0
10
5.0
0
-5.0
-10
-15
-20
14
-30
Pin, INPUT POWER (dBm)
f = 900 MHz
I CC, S
UP
PLY
CU
RR
EN
T (m
A) VCC = 5.0 V
3.9 V
3.3 V
2.7 V
-25 -20 -15 -10 -5.0 0
12
10
8.0
6.0
4.0
2.0
0
I CC, S
UP
PLY
CU
RR
EN
T (m
A)
16
-30
Pin, INPUT POWER (dBm)
f = 1900 MHz
VCC = 5.0 V
3.9 V
3.3 V
2.7 V
-25 -20 -15 -10 -5.0 0
14
12
10
8.0
6.0
4.0
2.0
0 0.5
1
1.5
2
2.5
3
0.500 1.000 1.500 2.000 2.500
f, Frequency (GHz)
NFm
in (d
B)
5
10
15
20
25
30
Asso
ciat
ed G
ain
(dB)
V cc = 2 .7 V
V cc = 3 .3 V
V cc = 5.0 V
V cc = 2 .7 VV cc = 3 .3 V
V cc = 5.0 V
Electrical Characteristics
MBC13916 Technical Data, Rev. 2.2
Freescale Semiconductor 5
3.1 Applications CircuitsFigures 8 and 9 show the 900 MHz applications circuit configuration and printed circuit board. The 1.9 GHz application configuration circuit and printed circuit board are shown in Figures 10 and 11. Tables 5 and 6 represent the electrical characteristics for the tested 900 MHz and 1.9 GHz application circuits. The bill of materials is listed in Table 7.
Figure 8. 900 MHz Applications Circuit Configuration
Figure 9. 900 MHz Printed Circuit Board
Table 5. Electrical Characteristics(VCC = 2.7 V, TA = 25° C, fRF = 900 MHz, Tested in Circuit Shown in Figure 8, unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Small Signal Gain S21 17 19 21 dB
Noise Figure NF - 1.25 - dB
Power Output at 1.0 dB Gain Compression P1dB 0 2.5 - dBm
Output 3rd Order Intercept Point OIP3 - 11 - dBm
2
1 3
4
RF Out
RF In
L 2 10. 0 nH
C 4 1. 5 pF
L 1 6. 8 nH
C 1 47 pf
Vcc
C 2 .01µf
C 3 100 pf
C 5 3 pF
C 1
C 2C 3
C 4
C 5L 1
L 2
Q 1
Electrical Characteristics
MBC13916 Technical Data, Rev. 2.2
6 Freescale Semiconductor
Figure 10. 1.9 GHz Application Configuration Circuit
Figure 11. 1.9 GHz Printed Circuit Board
Reverse Isolation S12 - -42 - dB
Supply Current ICC 3.8 4.7 5.6 mA
Table 6. Electrical Characteristics(VCC = 2.7 V, TA = 25°C, fRF = 1.9 GHz, Tested in Circuit Shown in Figure 10, unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Small Signal Gain S21 9.5 11.5 13.5 dB
Noise Figure NF - 2.1 - dB
Power Output at 1.0 dB Gain Compression P1dB - -4.0 - dBm
Output 3rd Order Intercept Point OIP3 - 5.5 - dBm
Table 5. Electrical Characteristics(VCC = 2.7 V, TA = 25° C, fRF = 900 MHz, Tested in Circuit Shown in Figure 8, unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
2
1 3
4
RF Out
RF In
L 2 10 nH
C 4 2. 7 pF
L 1 3. 3 nH
C 1 3. 3 pf
Vcc
C 2 .01µf
C 3 100 pf
L 3 5. 6 nH
C 1
C 2C 3
C 4
L 3L 1
L 2
Q 1
Electrical Characteristics
MBC13916 Technical Data, Rev. 2.2
Freescale Semiconductor 7
Reverse Isolation S12 - -28 - dB
Supply Current ICC 3.8 4.7 5.6 mA
Table 7. Bill of Materials1
1 All components are RoHS compliant.
Component Value Case Manufacturer Comments
900 MHz Figure 8
C1 47 pF 0402 Murata DC Block
C2 .01 uF 0402 Murata Low freq bypass to improve IP3
C3 100 pF 0402 Murata RF bypass
C4 1.5 pF 0402 Murata DC block, Output match
C5 3.0 pF 0402 Murata Output match, S22 improvement
L1 6.8 nH 0402 Toko Input match
L2 10.0 nH 0402 Toko DC Feedthrough, Output match
Q1 MBC13916 SOT343R Freescale SiGe cascode amp
1.9 GHz Figure 10
C1 3.3 pF 0402 Murata DC Block, Input match
C2 .01 uF 0402 Murata Low freq bypass to improve IP3
C3 100 pF 0402 Murata RF bypass
C4 2.7 pF 0402 Murata DC block, Output match
L1 3.3 nH 0402 Murata Input match
L2 10 nH 0402 Toko DC Feedthrough, Output match
L3 5.6 nH 0402 Toko Output match
Q1 MBC13916 SOT343R Freescale SiGe cascode amp
Table 6. Electrical Characteristics (continued)(VCC = 2.7 V, TA = 25°C, fRF = 1.9 GHz, Tested in Circuit Shown in Figure 10, unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Electrical Characteristics
MBC13916 Technical Data, Rev. 2.2
8 Freescale Semiconductor
Table 8. Scattering Parameters(VCC = 2.7 V, 50 Ω System)
f(MHz)
S11 S21 S12 S22
|S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ
100 0.829 -11 11.98 165 0.001 17 0.955 -4
200 0.798 -21 11.43 152 0.002 47 0.957 -7
300 0.753 -31 10.69 139 0.002 55 0.956 -11
400 0.701 -39 10.12 128 0.003 56 0.955 -14
500 0.648 -46 9.28 118 0.003 51 0.955 -18
600 0.599 -53 8.66 108 0.004 49 0.954 -22
700 0.554 -58 7.95 98 0.004 41 0.947 -26
800 0.518 -61 7.33 90 0.004 24 0.941 -30
900 0.485 -65 6.83 82 0.004 15 0.933 -34
1000 0.458 -67 6.23 74 0.004 -4 0.926 -38
1100 0.438 -69 5.78 67 0.004 -28 0.915 -43
1200 0.426 -71 5.39 60 0.005 -50 0.902 -46
1300 0.417 -72 4.97 52 0.006 -74 0.893 -51
1400 0.414 -73 4.59 46 0.008 -93 0.879 -54
1500 0.415 -74 4.31 39 0.011 -106 0.868 -58
1600 0.421 -75 3.99 32 0.014 -115 0.851 -62
1700 0.430 -76 3.66 25 0.018 -125 0.835 -66
1800 0.441 -78 3.43 19 0.022 -131 0.818 -70
1900 0.455 -80 3.16 12 0.027 -139 0.803 -73
2000 0.474 -82 2.93 5 0.033 -146 0.777 -77
2100 0.490 -85 2.70 -1 0.039 -152 0.761 -81
2200 0.504 -88 2.48 -8 0.045 -159 0.735 -85
2300 0.524 -92 2.27 -14 0.052 -163 0.707 -89
2400 0.542 -95 2.09 -21 0.059 -169 0.683 -93
2500 0.559 -98 1.90 -28 0.067 -175 0.651 -98
2600 0.572 -103 1.70 -34 0.075 180 0.624 -102
2700 0.587 -106 1.56 -40 0.083 174 0.593 -107
2800 0.603 -110 1.40 -48 0.091 169 0.562 -111
2900 0.610 -114 1.26 -55 0.098 163 0.533 -116
3000 0.613 -118 1.11 -60 0.105 160 0.501 -120
Electrical Characteristics
MBC13916 Technical Data, Rev. 2.2
Freescale Semiconductor 9
Table 9. Scattering Parameters(VCC = 3.0 V, 50 Ω System)
f(MHz)
S11 S21 S12 S22
|S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ
100 0.812 -11 13.42 165 0.001 11 0.954 -3
200 0.778 -21 12.73 151 0.001 50 0.955 -7
300 0.731 -30 11.82 138 0.002 58 0.956 -11
400 0.677 -38 11.10 127 0.003 50 0.954 -14
500 0.623 -44 10.12 116 0.003 51 0.954 -18
600 0.575 -50 9.37 107 0.003 43 0.952 -22
700 0.533 -54 8.56 98 0.003 30 0.945 -26
800 0.499 -57 7.85 90 0.004 24 0.937 -30
900 0.470 -59 7.29 82 0.004 8 0.930 -34
1000 0.448 -61 6.63 74 0.003 -11 0.923 -38
1100 0.433 -63 6.14 67 0.004 -38 0.911 -42
1200 0.423 -64 5.72 60 0.005 -58 0.900 -46
1300 0.418 -65 5.27 53 0.006 -77 0.891 -50
1400 0.421 -66 4.87 47 0.008 -96 0.878 -54
1500 0.425 -67 4.56 40 0.011 -108 0.868 -58
1600 0.432 -68 4.23 34 0.014 -120 0.852 -61
1700 0.444 -70 3.89 27 0.018 -126 0.838 -65
1800 0.459 -72 3.63 21 0.022 -133 0.822 -69
1900 0.473 -74 3.35 15 0.027 -140 0.809 -73
2000 0.490 -77 3.12 8 0.033 -147 0.784 -77
2100 0.509 -80 2.87 2 0.039 -152 0.769 -80
2200 0.527 -83 2.64 -5 0.045 -159 0.744 -84
2300 0.545 -86 2.42 -11 0.051 -163 0.717 -88
2400 0.560 -90 2.23 -17 0.059 -170 0.694 -92
2500 0.579 -94 2.03 -24 0.067 -175 0.663 -97
2600 0.594 -98 1.82 -30 0.075 -180 0.637 -101
2700 0.606 -101 1.68 -36 0.083 175 0.607 -105
2800 0.620 -105 1.50 -43 0.090 169 0.576 -110
2900 0.630 -110 1.35 -50 0.097 164 0.548 -114
3000 0.636 -113 1.19 -55 0.105 160 0.516 -119
Electrical Characteristics
MBC13916 Technical Data, Rev. 2.2
10 Freescale Semiconductor
Table 10. Scattering Parameters(VCC = 3.9 V, 50 Ω System)
f(MHz)
S11 S21 S12 S22
|S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ
100 0.796 -11 14.82 164 0.001 25 0.954 -3
200 0.760 -20 13.98 150 0.001 50 0.955 -7
300 0.711 -29 12.90 137 0.002 46 0.955 -11
400 0.655 -36 12.03 126 0.002 55 0.955 -14
500 0.602 -42 10.90 115 0.003 50 0.954 -18
600 0.556 -46 10.04 106 0.003 45 0.954 -22
700 0.517 -50 9.12 97 0.003 34 0.947 -26
800 0.487 -52 8.34 89 0.003 22 0.940 -30
900 0.463 -54 7.72 82 0.003 11 0.933 -34
1000 0.444 -56 7.02 74 0.003 -6 0.927 -38
1100 0.432 -57 6.49 67 0.003 -40 0.917 -42
1200 0.428 -58 6.03 61 0.005 -69 0.905 -46
1300 0.427 -59 5.55 53 0.006 -88 0.896 -50
1400 0.430 -60 5.13 48 0.008 -99 0.883 -53
1500 0.437 -61 4.81 41 0.011 -111 0.874 -57
1600 0.449 -62 4.45 35 0.014 -118 0.858 -61
1700 0.462 -64 4.09 29 0.018 -128 0.843 -64
1800 0.475 -66 3.83 23 0.022 -134 0.829 -68
1900 0.493 -69 3.53 17 0.027 -140 0.815 -72
2000 0.512 -72 3.28 10 0.032 -148 0.790 -76
2100 0.529 -75 3.03 4 0.038 -152 0.776 -79
2200 0.544 -78 2.79 -2 0.045 -159 0.752 -83
2300 0.565 -82 2.56 -8 0.051 -164 0.726 -87
2400 0.583 -85 2.37 -14 0.058 -169 0.704 -91
2500 0.599 -89 2.16 -21 0.067 -175 0.674 -96
2600 0.613 -93 1.94 -27 0.075 -179 0.648 -100
2700 0.629 -97 1.79 -32 0.083 175 0.621 -105
2800 0.643 -101 1.60 -39 0.091 170 0.589 -109
2900 0.650 -105 1.44 -46 0.098 164 0.562 -114
3000 0.653 -109 1.28 -51 0.105 160 0.531 -118
Electrical Characteristics
MBC13916 Technical Data, Rev. 2.2
Freescale Semiconductor 11
Table 11. Scattering Parameters(VCC = 5.0 V, 50 Ω System)
f(MHz)
S11 S21 S12 S22
|S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ
100 0.719 -9 21.47 161 0.001 5 0.939 -3
200 0.678 -17 19.60 145 0.001 18 0.939 -7
300 0.628 -23 17.43 132 0.001 38 0.940 -10
400 0.579 -27 15.66 120 0.002 47 0.937 -14
500 0.540 -30 13.78 110 0.002 38 0.936 -18
600 0.512 -32 12.40 101 0.003 37 0.934 -22
700 0.492 -34 11.05 93 0.002 32 0.927 -26
800 0.480 -34 9.97 86 0.002 9 0.920 -30
900 0.472 -35 9.12 79 0.002 -14 0.914 -34
1000 0.470 -37 8.21 73 0.002 -54 0.908 -38
1100 0.473 -37 7.54 67 0.003 -75 0.899 -42
1200 0.478 -39 6.97 61 0.004 -90 0.890 -46
1300 0.484 -40 6.37 54 0.006 -101 0.884 -50
1400 0.496 -42 5.86 50 0.008 -114 0.875 -54
1500 0.509 -44 5.49 44 0.010 -120 0.871 -57
1600 0.521 -46 5.08 39 0.013 -128 0.858 -60
1700 0.535 -49 4.67 34 0.017 -133 0.848 -63
1800 0.552 -51 4.38 29 0.021 -139 0.838 -67
1900 0.570 -54 4.06 23 0.025 -144 0.829 -70
2000 0.587 -56 3.80 18 0.030 -150 0.807 -73
2100 0.604 -60 3.54 13 0.036 -154 0.795 -76
2200 0.621 -63 3.28 7 0.042 -160 0.772 -79
2300 0.643 -67 3.04 2 0.048 -164 0.746 -83
2400 0.658 -70 2.84 -4 0.056 -169 0.722 -87
2500 0.673 -74 2.61 -10 0.063 -175 0.687 -91
2600 0.690 -78 2.36 -16 0.071 -179 0.657 -96
2700 0.705 -82 2.19 -21 0.079 176 0.623 -101
2800 0.715 -86 1.97 -27 0.088 170 0.588 -107
2900 0.720 -91 1.78 -33 0.094 164 0.556 -113
3000 0.723 -94 1.57 -38 0.101 161 0.523 -119
Noise Parameters
MBC13916 Technical Data, Rev. 2.2
12 Freescale Semiconductor
4 Noise ParametersNoise parameters for the MBC13916 are represented in Table 12.
Table 12. Noise Parameters
Freq Fmin Gamma OptRn
Ga
MHz dB Mag Angle dB
(VCC = 2.7 V, Icc = 4.7 mA)
0.500 0.92 0.14 47.6 0.18 29.08
0.700 0.92 0.14 64.2 0.14 26.61
0.900 0.96 0.14 79.6 0.12 24.22
1.000 0.99 0.14 86 0.11 23.05
1.500 1.37 0.15 119.4 0.11 17.5
1.900 1.88 0.17 140.3 0.15 13.4
2.000 2.03 1.8 144.9 0.16 12.43
2.400 2.79 0.2 160.4 0.22 8.71
Vcc = 3.3 V, Icc = 6 mA
0.500 0.96 0.13 35.5 0.19 29.98
0.700 0.97 0.13 55.3 0.15 27.34
0.900 1 0.12 75.1 0.13 24.81
1.000 1.05 0.12 85.1 0.12 23.59
1.500 1.39 0.13 135.7 0.12 17.91
1.900 1.84 0.14 176.5 0.16 13.88
2.000 1.97 0.15 -173.9 0.17 12.95
2.400 2.62 0.17 -135.5 0.24 9.48
Vcc = 5 V, Icc = 10.5 mA
0.500 1.07 0.11 0.2 0.21 32.36
0.700 1.11 0.1 28,8 0.18 29.19
0.900 1.18 0.09 61.3 0.15 26.22
1.000 1.21 0.08 78.8 0.14 24.87
1.500 1.46 0.07 179.8 0.13 18.81
1.900 1.74 0.07 -83.2 0.19 14.98
2.000 1.82 0.07 -56.7 0.22 14.17
2.400 2.19 0.09 58.2 0.2 11.47
Packaging
MBC13916 Technical Data, Rev. 2.2
Freescale Semiconductor 13
5 Packaging
Figure 12. Outline Dimensions for SOT-343R(Case 1404-01, Issue 0)
Product Documentation
MBC13916 Technical Data, Rev. 2.2
14 Freescale Semiconductor
6 Product DocumentationThis data sheet is labeled as a particular type: Product Preview, Advance Information, or Technical Data. Definitions of these types are available at: http://www.freescale.com on the documentation page.
Table 13 summarizes revisions to this document since the previous release (Rev. 2.1).Table 13. Revision History
Location Revision
Table 4 Device Level Characteristics Updated Output Third Order Intercept Point.
Figure 8 900 MHz Applications Circuit Configuration Updated.
Figure 9 1.9 GHz Application Configuration Circuit Replaced.
Table 5 Electrical Characteristics Updated Output 3rd Order Intercept Point.
Figure 10 1.9 GHz Application Configuration Circuit Updated.
Table 7 Bill of Materials Updated through out the table.
Figure 12 Outline Dimensions for SOT-343R Updated.
NOTES
MBC13916 Technical Data, Rev. 2.2
Freescale Semiconductor 15
Document Number: MBC13916/DRev. 2.205/2006
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