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TAN GIM HENG - psasir.upm.edu.mypsasir.upm.edu.my/id/eprint/65480/1/FK 2015 167IR.pdf · reduction...
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UNIVERSITI PUTRA MALAYSIA
TAN GIM HENG
FK 2015 167
RADIO FREQUENCY FRONT END RECEIVER BLOCKS WITH ULTRA LOW SUPPLY VOLTAGE AND LOW POWER DISSIPATION FOR ZIGBEE
APPLICATIONS
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RADIO FREQUENCY FRONT END RECEIVER BLOCKS WITH ULTRA
LOW SUPPLY VOLTAGE AND LOW POWER DISSIPATION FOR ZIGBEE
APPLICATIONS
By
TAN GIM HENG
Thesis Submitted to the School of Graduate Studies, Universiti Putra
Malaysia, in Fulfillment of the Requirements for the Degree of Doctor of
Philosophy
April 2015
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COPYRIGHT
All material contained within the thesis, including without limitation text, logos, icons,
photographs and all other artwork, is copyright material of Universiti Putra Malaysia
unless otherwise stated. Use may be made of any material contained within the thesis
for non-commercial purposes from the copyright holder. Commercial use of material
may only be made with the express, prior, written permission of Universiti Putra
Malaysia.
Copyright © Universiti Putra Malaysia
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Abstract of thesis presented to the Senate of Universiti Putra Malaysia
in fulfilment of the requirement for the degree of Doctor of Philosophy
RADIO FREQUENCY FRONT END RECEIVER BLOCKS WITH ULTRA
LOW SUPPLY VOLTAGE AND LOW POWER DISSIPATION FOR ZIGBEE
APPLICATIONS
By
TAN GIM HENG
April 2015
Chair: Roslina Mohd Sidek, PhD
Faculty: Engineering
Portable wireless devices have been the heat of demands in recent years for many
applications such as Wireless Sensor Network (WSN) which requires low power
consumption since these devices are commonly powered up by battery. One way to
reduce circuit power consumption is to lower the supply voltage or DC current of the
circuit. Continuous modern technology scaling with a proportional supply voltage
reduction outlays a challenge in designing Radio Frequency (RF) circuits. In fact, the
recent supply voltage and power consumption for mixer have been saturated at around
0.8V and 1mW respectively.
Direct conversion receiver (DCR) is the preferred choice of low power adaptation for
the receiver front-end. The most common topologies for mixer are Gilbert cell, folded
cascode and current bleeding mixer. However, these architectures still require high
supply voltage to operate. The proposed architecture combines the current bleeding
technique and folded structure to realize the operation at ultra-low supply voltage of
0.5V while enhancing the isolation between Local Oscillator (LO) and RF ports. This
mixer exhibits a measured conversion gain of 11dB at the radio frequency (RF) of
2.4GHz, an input third-order intercept point (IIP3) of -0.4dBm and a LO-RF isolation
measured to 60 dB and the DC power consumption is 850µW.
This research also includes the design and analysis of current bleeding mixer topology
adapting forward body bias technique coupled with the integration of an inductor at the
gate of the NMOS bleeding transistor to increase the conversion gain without
additional DC power consumption. The measured conversion gain and IIP3 of this
mixer is 13dB and -0.5dBm respectively and only consume DC power of 480µw and
operates at 0.35V of supply voltage. Integrated LNA-Mixer is investigated in this thesis
which focuses on ultra-low voltage and low power implementation. This integrated
chip features a simulated conversion gain of 20.3dB at the radio frequency (RF) of
2.4GHz, an input third-order intercept point (IIP3) of -10.3dBm and Noise Figure (NF)
is at 7.2dB. The dc power consumption is 950µw while working at the supply voltage
of 0.5V.
The circuits are designed such that the critical transistors operate at optimum
transconductance to meet the low power requirement of ZigBee applications. All
circuits were fabricated using CMOS 0.13um technology and measurement was
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performed on die samples. As a conclusion, the ultra-low voltage and low-power
techniques used in this research meets the requirement for ZigBee applications while
working at supply voltage of 0.5V and 0.35V with power dissipation of less than 1mW.
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Abstrak tesis yang dikemukakan kepada Senat Universiti Putra Malaysia
sebagai memenuhi keperluan untuk ijazah Doktor Falsafah
BLOK PENERIMA BAHAGIAN DEPAN FREKUENSI RADIO DENGAN
VOLTAN BEKALAN ULTRA RENDAH DAN PELEPASAN KUASA RENDAH
UNTUK APLIKASI ZIGBEE
Oleh
TAN GIM HENG
April 2015
Pengerusi: Roslina Mohd Sidek, PhD
Fakulti: Fakulti Kejuruteraan
Permintaan peranti wayarles mudah alih meningkat kebelakangan ini untuk berbagai
aplikasi seperti Rangkaian Sensor Tanpa Wayar (WSN) yang memerlukan penggunaan
kuasa yang rendah kerana ianya bergantung kepada bateri. Satu cara untuk
mengurangkan penggunaan kuasa litar adalah dengan mengurangkan voltan bekalan
atau arus pincangan. Penskalaan teknologi modern yang berterusan berkadar dengan
pengurangan voltan memberi cabaran dalam mereka bentuk litar frekuensi radio (RF).
Malah, baru-baru ini, voltan bekalan dan penggunaan kuasa untuk pencampur telah
masing-masing tepu pada kira-kira 0.8V dan 1mW.
Penerima Penukaran Langsung (DCR) adalah pilihan yang lebih sesuai untuk adaptasi
kuasa rendah bagi penerima bahagian depan. Topologi yang biasa digunakan untuk
pencampur adalah sel Gilbert, kaskod berlipat dan pencampur penyaliran arus. Walau
bagaimanapun, kerangka ini masih memerlukan voltan bekalan yang tinggi untuk
beroperasi. Seni bina yang dicadangkan ialah dengan menggunakan gabungan teknik
penyaliran arus dan struktur berlipat untuk merealisasikan operasi pada voltan bekalan
ultra-rendah di samping meningkatkan pengasingan antara pelabuhan pengayun
tempatan (LO) dan RF. Pencampur ini mempamerkan gandaan penukaran yang diukur
pada 11dB pada frekuensi radio (RF) 2.4GHz, satu titik input ketiga-perintah memintas
(IIP3) pada -0.4dBm, pengasingan LO-RF yang diukur pada 60dB dan penggunaan
kuasa DC adalah 850μW.
Tesis ini juga melaporkan reka bentuk dan analisis topologi pencampur arus penyaliran
ultra kuasa rendah dan voltan rendah dengan menggunakan teknik pincangan substrat
kehadapan dengan integrasi induktor di get transistor penyaliran untuk meningkat
gandaan penukaran tanpa penambahan DC kuasa. Gandaan penukaran dan IIP3
pencampur adalah masing-masing 13dB dan -0.5dBm masing-masing dan hanya
menggunakan kuasa DC 480μw dan beroperasi pada 0.35V voltan bekalan. LNA-
pencampur bersepadu dikaji dalam tesis ini dengan memberi tumpuan kepada voltan
ultra rendah dan pelaksanaan kuasa yang rendah. Pencampur bersepadu ini mempunyai
gandaan penukaran 20.3dB pada frekuensi radio (RF), 2.4GHz, satu titik input ketiga-
perintah memintas (IIP3) pada -10.3dBm dan angka hingar (NF) adalah di 7.2dB.
Penggunaan kuasa DC adalah 950μw dengan voltan bekalan 0.5V.
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Litar direka bentuk dengan memastikan transitor yang kritikal beroperasi pada
transkonduktans yang optimun bagi memenuhi keperluan kuasa rendah applikasi
ZigBee. Semua litar yang direka bentuk dengan menggunakan teknologi CMOS
0.13um dan pengukuran dilakukan terus pada sampel die. Kesimpulannya, voltan dan
kuasa rendah teknik yang digunakan dalam reka bentuk memenuhi keperluan untuk
permohonan ZigBee dan boleh beroperasi pada voltan bekalan 0.5V dan 0.35V dengan
kuasa pelepasan kurang dari 1mW.
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ACKNOWLEDGEMENTS
The completion of my thesis was made possible with the help rendered by many people.
First and foremost, I would like to express my sincere gratitude and heartfelt
appreciation to my supervisor, Associate Professor Dr. Roslina Mohd Sidek, for her
invaluable advices, technical guidance, great patience and continuous inspiration. She
always encourages all her students to have high aspiration and strive for excellence. I
would also like to thank my co-supervisor, Dr.Maryam Mohd Isa and Dr. Harikrishnan
Ramiah for their excellent advice and constructive suggestions in helping to shape my
project.
In addition, I would like to thank my research group members who have been working
with me during my PhD studies. They are Chong Wei Keat, Nadini and Lioe De Xing.
Besides sharing their academic knowledge and technical skills, they have provided
good co-operation to me in my lab work. I am also grateful to all my close friends, for
their encouragement in times of need. I want to extend my sincere thanks to all my
friends in the Laboratory of IC Design for moral support and excellent work
atmosphere. Besides, I would like to thank my family, my wife, Low Xun Yun and my
daughter, Sophie Tan Wei Zhi who always encouraged me in pursuing my studies.
Finally, thanks to all those who contributed in one way or another to the success of this
research.
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This thesis was submitted to the Senate of Universiti Putra Malaysia and has been
accepted as fulfilment of the requirement for the degree of Doctor of Philosophy. The
members of the Supervisory Committee were as follows:
Roslina Mohd Sidek, PhD
Associate Professor
Faculty of Engineering
Universiti Putra Malaysia
(Chairman)
Maryam Mohd Isa, PhD
Senior Lecturer
Faculty of Engineering
Universiti Putra Malaysia
(Member)
Harikrishnan Ramiah, PhD
Senior Lecturer
Faculty of Engineering
University of Malaya
(Member)
___________________________
BUJANG BIN KIM HUAT, PhD
Professor and Dean
School of Graduate Studies
Universiti Putra Malaysia
Date:
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Declaration by graduate student
I hereby confirm that:
this thesis is my original work;
quotations, illustrations and citations have been duly referenced;
this thesis has not been submitted previously or concurrently for any other
degree at any other institutions;
intellectual property from the thesis and copyright of thesis are fully-owned
by Universiti Putra Malaysia, as according to the Universiti Putra Malaysia
(Research) Rules 2012;
written permission must be obtained from supervisor and the office of Deputy
Vice-Chancellor (Research and Innovation) before thesis is published (in the
form of written, printed or in electronic form) including books, journals,
modules, proceedings, popular writings, seminar papers, manuscripts,
posters, reports, lecture notes, learning modules or any other materials as
stated in the Universiti Putra Malaysia (Research) Rules 2012;
there is no plagiarism or data falsification/fabrication in the thesis, and
scholarly integrity is upheld as according to the Universiti Putra Malaysia
(Graduate Studies) Rules 2003 (Revision 2012-2013) and the Universiti Putra
Malaysia (Research) Rules 2012. The thesis has undergone plagiarism
detection software.
Signature: _______________________ Date: __________________
Name and Matric No.: Tan Gim Heng GS24572
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Declaration by Members of Supervisory Committee
This is to confirm that:
the research conducted and the writing of this thesis was under our supervision;
supervision responsibilities as stated in the Universiti Putra Malaysia (Graduate
Studies) Rules 2003 (Revision 2012-2013) are adhered to.
Signature: ______________________ Signature: _____________________
Name of Name of
Chairman of Member of
Supervisory Supervisory
Committee: ROSLINA MOHD SIDEK Committee: MARYAM MOHD ISA
Signature: ______________________
Name of
Member of
Supervisory
Committee: HARIKRISHNAN RAMIAH
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TABLE OF CONTENTS
Page
ABSTRACT i
ABSTRAK iii
ACKNOWLEDGEMENTS v
APPROVAL vi DECLARATION viii LIST OF TABLES xiii LIST OF FIGURES xiv LIST OF ABBREVIATIONS xvi
CHAPTER 1 INTRODUCTION 1
1.1 Motivation 1
1.2 Problem statement 1
1.3 Objectives 3
1.4 Scope of Work 4
1.5 Research methodology 4
1.6 Organization of the thesis 5
2 LITERATURE REVIEW 7 2.1 Introduction 7
2.2 Wireless communication system and architecture 7
2.3 IEEE 802.5.4b/ZigBee Standard Overview 9
2.4 Mixer Design parameters 10
2.4.1 Conversion Gain 11
2.4.2 Noise Figure 11
2.4.3 Linearity 13
2.5 IEEE 802.15.4 Requirement for Noise Figure and IIP3 17
2.6 Low-voltage and low-power RF circuit design techniques 18
2.6.1 Forward-body-bias technique 18
2.6.2 Current-reused Technique 19
2.6.3 Subthreshold biasing technique 19
2.7 Mixer topology 21
2.7.1 The Gilbert Cell Mixer 21
2.7.2 Folded Mixer 22
2.7.3 Current bleeding mixer 23
2.7.4 Bulk driven mixer 24
2.7.5 Sub-harmonic mixer 24
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2.7.6 Summary of reported mixer 26
2.8 Low Noise Amplifier (LNA) 27
2.9 Integrated LNA-Mixer topology 27
2.10 Conclusion 28
3 ULTRA-LOW VOLTAGE AND LOW POWER MIXER 28
3.1 Introduction 29
3.2 Design considerations 29
3.3 Proposed ultra-low voltage design topology 30
3.3.1 Design using gmID methodology 34
3.3.3 PMOS-based LO switching stage with low DC biasing voltage 39
3.3.4 Supply voltage headroom and constraint 40
3.3.5 High LO-RF isolation 41
3.3.6 NMOS-based bleeding transistor reduces RF leakage to power rail 45
3.3.7 Reduction of parasitic capacitance at the RF-LO mixing node 46
3.4 Results and Discussions 49
3.5 Conclusion 61
4 FORWARD BODY-BIAS CMOS MIXER COUPLED WITH INDUCTOR
AT THE BLEEDING TRANSISTOR 62
4.1 Introduction 62
4.2 Design Considerations 62
4.3 Forward body-bias mixer coupled with bleeding gate inductor 63
4.3.1 Integration of inductor at the gate of bleeding transistor 64
4.3.2 Stability of The Mixer 65
4.3.3 Spurious signal at the output port 67
4.3.4 Linearity, IIP3 analysis 68
4.3.5 Reduced RF current leakage through Cgs of bleeding transistor 68
4.4 Temperature Compensation Circuitry 69
4.5 Results and discussions 70
4.5.1 Forward body-bias mixer coupled with bleeding gate inductor 70
4.5.2 Mixer with integration of temperature compensation Circuitry 76
4.6 Performance comparison with other reported mixer 80
4.7 Conclusion 81
5 ULTRA-LOW VOLTAGE AND LOW POWER INTEGRATED LNA
MIXER 82 5.1 Introduction 82
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5.2 Design Considerations 82
5.3 Proposed Ultra-Low Voltage Differential Integrated LNA-Mixer 83
5.4 Results and Discussions 89
5.5 Conclusion 97
6 CONCLUSION AND FUTURE WORK 98 6.1 Overview 98
6.2 Technical Contributions and Impact of The Thesis 98
6.3 Scope of Future Works 99
REFERENCES 101 BIODATA OF STUDENTS 107 LIST OF PUBLICATIONS 108
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LIST OF TABLES
Table Page
2.1: Summary of other reported mixers 26 2.2: Comparison with other integrated LNA-mixers 28 3.1: Design parameters for the mixer 38 3.2: Comparison results between schematic, post layout and measurement results 57 3.3: The effect of performance due to PVT variations 59 3.4: Comparison with other mixers 60 4.1: Design parameters for the mixer 75 4.2: Performance comparison with other reported mixer 80 5.1: The effect of performance due to PVT variations 94 5.2: Design parameters for the mixer 95 5.3: Summary results and performance comparison of other LNA- mixer. 96
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LIST OF FIGURES
Figure Page
1.1: Supply voltage of reported active mixers (Shirazi et al., 2013) 2 1.2: Power consumption of reported mixers (Shirazi et al., 2013) 2 1.3: Research methodology flow 5 2.1: RF receiver 7 2.2: Super-heterodyne receiver 8 2.3: Direct conversion receiver (DCR) 9 2.4: Wireless applications in term of coverage and data rate (Le, 2011) 10 2.5: Cascaded Noise Figure 12 2.6: 1dB compression point 13 2.7: Intermodulation in a non-linearity system 14 2.8: Input-output characteristic of a nonlinear system 14 2.9: Corruption of a signal due to intermodulation between two interferers 15 2.10: Third-order intercept point (IIP3) 15 2.11: Potential LO self-mixing paths 16 2.12: Cross sectional of the NMOS device with deep N-well structure. 18 2.13: Current reuse technique 19 2.14: Gilbert cell 21 2.15: Folded cascode mixer 22 2.16: Current bleeding mixer 23 2.17: Bulk driven mixer 24 2.18: 2X Subharmonic mixer 25 3.1: CMOS current bleeding mixer adapted from (Park el at., 2007) 31 3.2: Simplified block diagram for the proposed mixer 32 3.3: Proposed ultra-low voltage CMOS current mixer 33 3.4: Ratio of LO switch current to total DC current 37 3.5: gm/Id versus overdrive voltage for NMOS 35 3.6: Id/W versus gm/Id voltage for NMOS 35 3.7: gm/Id versus overdrive voltage for PMOS 36 3.8: Id/W versus gm/Id voltage for PMOS 36 3.9: LO leakage for single-ended current bleeding mixer 42 3.10: Proposed high LO-RF isolation 43 3.11: LO-RF leakage path 43 3.12: Small signal model seen into the bleeding transistor 44 3.13: Small signal RF current leak through RBleed 45 3.14: Single-ended small signal model for the proposed mixer 46 3.15: Parasitic capacitor at the source of the switching node 47 3.16: Simplified small signal model looking into the source of switching stage 48 3.17: DC current (schematic/post layout) 49 3.18: Probe station 50 3.19: GSGSG probe 51 3.20: Conversion gain versus LO power 52 3.21: Conversion gain versus RF frequency 53 3.22: Linearity, IIP3 54 3.23: Output spectrum 54
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3.24: LO-RF isolation 55 3.25: RF-LO isolation 55 3.26: LO-IF isolation 56 3.27: Noise Figure 56 3.28: Flicker noise frequency 57 3.29: Linearity, IIP3 at 0.45V 58 3.30: Chip Photograph 58 4.1: Forward body-bias CMOS mixer with inductor at the bleeding transistor 63 4.2: Small signal model with the integration of inductor at the gate 64 4.3: Admittance looking into the NMOS bleeding transistor 66 4.4: Output Spurious 67 4.5: Proposed mixer with temperature compensation circuitry 69 4.6: Vth and Ibs versus Vbs voltage variation for NMOS 70 4.7: Vth and Ibs versus Vbs voltage variation for PMOS 71 4.8: Conversion gain versus LO power 71 4.9: Conversion gain versus RF frequency 72 4.10: IIP3 with 1 MHz of frequency spacing 73 4.11: Output spectrum 73 4.12: LO-RF isolation 74 4.13: Noise Figure 74 4.14: IIP3 at supply voltage of 0.33V 75 4.15: Chip micrograph 76 4.16: Conversion gain versus temperature 77 4.17: IIP3 versus temperature 77 4.18: Noise Figure versus temperature 78 4.19: Conversion gain versus supply voltage 79 4.20: DC Power versus supply voltage 79 4.21: Noise Figure versus IF frequency 80 5.1: Integrated differential LNA-mixer 83 5.2: Low power single-ended LNA-mixer design from (Le, 2011) 84 5.3: Small signal equivalent circuit of integrated LNA-mixer 86 5.4: RF leakage current through parasitic capacitance 88 5.5: Conversion gain versus ratio current of bleeding/mixer 89 5.6: S11 input reflection 90 5.7: Conversion gain against LO power 91 5.8: Conversion gain versus RF frequency 91 5.9: 1dB compression point 92 5.10: IIP3 of integrated LNA-mixer 92 5.11: Noise Figure 93 5.12: Layout of integrated LNA-mixer 93
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LIST OF ABBREVIATIONS
ADC Analog to Digital converter
CG Conversion gain
CMOS Complementary Metal Oxide Semiconductor
DBM Double-balanced mixer
DCR Direct conversion receiver
FOM Figure of Merit
Gm Transconductance
IC Integrated Circuit
IF Intermediate frequency
IIP3 Third-Order Intercept Point
IM Intermodulation
ISM Industrial, Scientific, Medical
LNA Low Noise Amplifier
LO Local Oscillator
LPE Layout Parasitic Extraction
LR-WPAN Wireless personal area network
MOSFET Metal Oxide Semiconductor Field Effect Transistor
NF Noise Figure
NMOS N-Channel MOSFET
PA Power Amplifier
PMOS P-Channel MOSFET
PVT Process voltage Temperature
RF Radio Frequency
SNR Signal to noise ratio
SoC System on Chip
VCO Voltage Controlled Oscillator
VTH Threshold voltage
WLAN Wireless local area networks
WSN Wireless Sensor Network
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CHAPTER 1
INTRODUCTION
1.1 Motivation
The desire for portability of electronic devices generated global needs for ultra-low
power circuits. Ultra-low-voltage and low-power design is the main motivation for this
research as increasing number of the electronics devices nowadays are wireless
portable devices which are operated by the battery. Low power dissipation is very
important for portable devices in order to have maximum battery life-time (Wu et al.,
2007). Due to this crucial low power requirement, ultra-low voltage and low-power
CMOS radio frequency integrated circuit (RFICs) has been the heat of discussion in
recent years to prolong and reduce the weight of the battery (Heiberg et al., 2011).
A low-power implementation of a wireless front-end receiver had been widely reported
for application such as Wireless Sensor Network (WSN) (Song et al., 2007 and
Shokrani et al., 2014). WSN applications which require very low power and low data
rate often adopt ZigBee standard based on the regulation of IEEE 802.15.4. This
standard operates in the frequency of 2.4GHz for the short range wireless
communication in WSN and very suitable for low power circuit (Manjula & Selvathi,
2012).
The basic building blocks for the RF front-end of a wireless transceiver includes low
noise amplifier (LNA), mixer, filters, voltage controlled oscillator (VCO) and power
amplifier (PA). One of the main challenges for low-power design for RF front-end is to
achieve the desired dynamic performance while minimizing the DC power dissipation.
However, minimization of the power dissipation might degrade the dynamic
performance of the RF circuitry such as conversion gain and linearity. For example,
reducing the DC biasing current of the mixer’s transconductance stage will degrade the
conversion gain and linearity of the mixer.
1.2 Problem statement
Over the years, a lot of researches have been done to meet the demand for wireless
communication standard like wireless local area networks (WLAN) which require
stringent specifications for high data-rate application. The IEEE 802.15.4 standard was
specially developed targeted for Wireless Sensor Network (WSN) applications such as
industrial automation, remote monitoring and control applications which require very
low power consumption and low complexity. ZigBee standard does not impose severe
restrictions on specification such as noise and sensitivity, the design restriction is more
on power consumption (Cornetta, 2009). The power consumption required in WSN
front-end is expected to be lower compare to other applications due to the relaxed
specifications required to support a low data throughput. The focus of Wireless Sensor
Network (WSN) protocols is usually on long-range and real-time applications. Low
power applications that employ WSN include lighting controls, air conditioning
controls, remote meter reading, security, sensors for fire safety residential and
industrial automation, automotive control and monitoring, entertainment and health
care. A wireless solution to the applications listed is not practical if the high power
consumption in wireless devices requires frequent battery replacement or recharge.
Since these applications need only low-complexity wireless connectivity with low data-
rate and low-power wireless solution is feasible.
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Due to the continuous CMOS technology down scaling to nano-meter level, the
proportional downscaling of supply voltage is compulsory to maintain the reliability of
the transistor gate-oxide (Hsieh, Lu, 2007). Scaling of CMOS technologies has a great
impact on RF circuit design due to the reduction of the supply voltage (Wan, et al.,
2012). The supply voltage can be reduced to around 0.5V for application with solar
cells (Kousai, 2014). Figure 1.1 illustrates the trend in the supply voltage of the state-
of-the-art active mixers that are published from year 1997 to 2012.
Figure 1.1: Supply voltage of reported active mixers (Shirazi et al., 2013)
As can be observed from Figure 1.1, the trend line shows that the supply voltage
reduces by almost 85 mV per year and the exponential trend line tends to saturate at
around 0.8V (Shirazi et al., 2013). Figure 1.2 illustrates the power consumption of the
active mixer and it is obviously shows that the power consumption reduces by
approximately 0.8mW per year. However, the decrease in the power consumption
eventually flattens at around 1 mW which providing a bottleneck in operating the mixer
in micro power range.
Figure 1.2: Power consumption of reported mixers (Shirazi et al., 2013)
For digital circuits, small feature size of MOSFET is preferred which is proportional to
the down scaling of supply voltage. Most of the electronic system nowadays is based
on System on Chip (SoC) which integrates digital, analog and RF signal on a single
chip (Hong et al., 2008, and Schweiger et al., 2011). The digital circuits which are
integrated with the RF circuits on the same die will require the RF circuits to operate
with the same supply voltage in order to simplify the system architecture while
ensuring the lowest DC power consumption (Heiberg et al., 2011). Hence, the RF
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circuits must able to operate with single supply voltage in order to be compatible with
the supply voltage of the digital circuit which poses a new challenge for RF circuits to
operate without sacrificing the circuit’s performance (Nebojsa, 2008). However, low
voltage circuit design usually demands higher biasing current to avoid the dynamic
range degradation which results in an increase of power consumption. Low voltage
circuit design must come with low current consumption in order to reduce the overall
power consumption of the circuit. Hence, low-voltage architecture coupled with low
current consumption becomes very challenging to design and is an essential need for
portable wireless devices. Various low-voltage and low-power design techniques have
been explored and studied to enable the RF circuitry to operate at ultra-low supply
voltage while maintaining the dynamic performance of the circuit. Low power
consumption is one of the main specification required by ZigBee standard and can be
reduced by either lowering down the supply voltage or decreasing the DC current used
in the circuit.
Direct conversion receiver (DCR) is the preferred choice of low power and low cost
adaptation for the receiver front-end as it directly converts the RF signal to IF signal
without using the intermediate stage and external components (Chiou, Lin & Row,
2012) . This reduces the overall power consumption of the front-end receiver. One of
the major issues associated with DCR is the LO to RF port isolation (Razavi, 1997).
The self-mixing produces a DC offset which will degrade the performance of the
receiver. Therefore, high isolation between the LO-RF ports is crucial in the effort of
alleviating self-mixing (Hsu & Lee, 2006 and Yoon et al., 2011). Typically, cascoded
circuit is used to enhance the isolation between the ports (Ahn et al., 2009). However,
cascoded structure requires higher voltage headroom to operate and it is not suitable to
be implemented for low-voltage circuits. Therefore, low-voltage mixer with high LO-
RF isolation is critical for DCR architecture.
The whole system linearity of the receiver front-end is often limited by the linearity of
the mixer. The input power of the mixer is relatively large compare to the input power
of Low Noise Amplifier (LNA). The linearity of the mixer plays the key role to
determine dynamic range of the communication system. The linearity is inversely
proportional to the supply voltage and as a result to design a mixer with good linearity
become very challenging nowadays as the supply voltage is scaled down to below 1V
(Razavi,2007). New circuit design techniques are needed to ensure the circuit to
function well while maintaining the linearity performance.
The conventional architecture of receiver front-end consists of discrete components
such as low noise amplifier (LNA), mixer, voltage control oscillator (VCO), low pass
filter and inter-stage matching network. The extra impedance matching circuitry leads
to signal power wastage, supply power overhead and impending parasitic component
due to the complexity of the circuitry. Integrated LNA-Mixer is investigated in this
thesis that focus on low power implementation. As a conclusion, the ultra-low voltage
and low-power techniques used in this design does not degrade the performance of the
circuits and meets the requirement for ZigBee application.
1.3 Objectives
The proposed research is carried out in the effort of realizing an ultra-low voltage and
low power CMOS mixer and integrated LNA-mixer in compliance with IEEE 802.15.4
ZigBee application. The proposed architectures are realized in 0.13μm, 8 metals, and 1
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poly standard CMOS process. In this thesis, the primary objectives of the research are
given as:
1. To investigate circuits design techniques for ultra-low voltage and low power RF
front-end receiver with improved dynamic performance.
2. To design and analyze ultra-low voltage and low power new current bleeding
CMOS mixer topology at 0.5V of supply voltage.
3. To enhance CMOS mixer design in term of power consumption and supply
voltage headroom using inductor coupled gate bleeding transistor and forward-
body bias techniques at 0.35V of supply voltage.
4. To implement and validate mixer as an integrated LNA-mixer in 0.13um
technology at 0.5V of supply voltage.
1.4 Scope of Work
This thesis will focus on implementation of ultra-low voltage and low-power double
balanced mixer and integrated LNA-mixer using 0.13um CMOS technology at the
supply voltage of 0.5V and 0.35V. Due to the relaxed requirements of the ZigBee
standard with a data rate of 250Kbps, ultra-low power consumption is the most
important parameter to consider while maintaining the dynamic performance of the
circuit. The dynamic performance of the mixer includes the conversion gain (CG),
linearity, IIP3, Noise Figure (NF) and ports to ports isolation. These results will be
compared with other reported mixers using the Figure of Merit (FOM) to prove that the
proposed mixer has compatible performance while working at low supply voltage and
low-power consumption.
1.5 Research methodology
Figure 1.3 illustrates the research methodology flow for the research. The circuits are
designed according to the specifications and simulated using Cadence software to
validate its performance. The circuits are fabricated in CMOS 0.13um technology and
measurement is performed on the die using probe station to verify its performance.
The proposed research is conducted with the aim of designing a ultra-low-voltage and
low-power CMOS differential mixer and integrated LNA-mixer. Various low voltage
and low power design technique have been studied and explored to enable the mixer to
work at supply voltage of 0.5V and 0.35V.
The new CMOS current bleeding mixer is introduced by adapting a combination of
NMOS-based current bleeding transistor, PMOS-based LO switching stage and
integrated inductors to enable the circuit to operate with ultra-low voltage supply of
0.5V. The DC voltage required for PMOS-based LO switching stage is moving towards
ground potential which is independent of positive of power supply and this makes the
circuit very attractive for low voltage application. This low-voltage architecture is
further utilized to enhance the isolation between the LO and RF ports while
maintaining the operation with only 0.5V of supply voltage.
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LiteratureReview
Research Statement
and defining specifications
Circuit Design
and Simulation
Meeting Requirement
Layout Design
and Verification
Extraction and post-
layout simulation
Tape-out
Die Testing and
Evaluation
Meeting Requirement
No
No
Yes
endYes
Figure 1.3: Research methodology flow
Another design approach investigated for ultra-low-power and low-voltage CMOS
mixer is based on current bleeding mixer topology adapting forward body-bias
technique together with the integration of inductors at the gate of bleeding transistors.
This approach increases the conversion gain without increasing the DC power
consumption of the circuits. Low voltage design couples with low DC current prove to
be the breakthrough for micro power RF circuit design. The ultra-low voltage and low
power integrated LNA-mixer that allows the sharing of DC current between LAN and
mixer is also proposed which can reduce the power consumption.
1.6 Organization of the thesis
This thesis is divided into six chapters. After introducing the research objectives and
challenges in chapter 1, chapter 2 starts with a review of the basic wireless receiver
architectures, ZigBee standard and the fundamental operation of the mixer. This
chapter also covers various topologies for low-voltage and low-power CMOS mixer
and integrated LNA-mixer. All topologies are compared their performance in term of
conversion gain (CG), third-order intercept point (IIP3), noise figure (NF) and port and
port isolation. Chapter 3 provides an overview of the ultra-low voltage and low power
mixer design at 0.5V of supply voltage in 0.13µm CMOS technology. In this chapter, a
fundamental theory to implement a low-voltage mixer is discussed in depth and novel
circuit design technique is introduced to improve LO-RF isolation while still able to
operate at low supply voltage. The low-voltage design technique used in this circuit is
further utilized to improve the IIP3 of the mixer. Ultra-low voltage mixer without
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sacrificing the performance of the mixer is the key contribution from this chapter.
Chapter 4 describes a further improvement in the low-voltage and low-power circuit
design techniques developed in chapter 3. In this approach, forward body bias is
applied to the circuit to reduce the threshold voltage of the transistor in order to reduce
the overall voltage headroom of the circuit. Integrated inductor is inserted at the gate of
the current bleeding transistor to increase the conversion gain of the mixer without
increasing the DC biasing current of the transconductance stage. Mathematical analysis
has proven that conversion gain has increased and the circuit is in stable condition as
the inductor is integrated at the gate of the bleeding transistor. This mixer is able to
work at ultra-low supply voltage of 0.35V. In this chapter as well, ultra-low voltage
CMOS mixer with the adaptation of novel temperature compensation circuitry is
discussed. The simulations results of mixer are shown and compared with the
measurement results. All the experimental result of the fabricated 0.13µm CMOS
mixers have been compared with the state of the arts mixer which have been published
by other researchers.
Chapter 5 presents an integrated ultra-low voltage and low-power differential
integrated LNA-mixer architecture. Due to the low cost requirements by the ZigBee
standard, the integrated LNA-mixer will eliminate the needs of external filter and
impedance matching circuitry. The DC current from mixer is reused at LNA stage to
increase its transconductance for conversion gain enhancement. Furthermore, the mixer
stage is folded into the LNA to reduce the voltage headroom required to operate. This
integrated LNA-mixer is able to operate at the supply voltage 0.5V. In comparison
respective to other reported work, the proposed architecture exhibits the lowest supply
voltage headroom consumption and reports power dissipation below 1mW and this
architecture proves to be among the lowest in power consumption. Finally, chapter 6
concludes the thesis with technical contributions from the work and on potential future
work.
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