T. Sumiyoshi (TMU) 30, Nov. 2004 RICH04 @Playa del Carmen 1 Development of HPD...
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Transcript of T. Sumiyoshi (TMU) 30, Nov. 2004 RICH04 @Playa del Carmen 1 Development of HPD...
1T. Sumiyoshi (TMU)30, Nov. 2004 RICH04@Playa del Carmen
Development of HPDDevelopment of HPD (HAP(HAPD)D)
Photon-detector for thPhoton-detector for the Aerogel RICH e Aerogel RICH
Development of HPD aDevelopment of HPD and HAPDnd HAPD Prototype Prototype
TestTest Readout ElectronicsReadout Electronics SummarySummary
Aerogel Radiator
Cherenkov photons
Positio
n
sen
sitiv
eP
hoto
n D
ete
cto
r
Concept of the Aerogel RICH
PID upgrade for theforward end-cap region.
e- e+
2T. Sumiyoshi (TMU)30, Nov. 2004 RICH04@Playa del Carmen
Photon-detectorPhoton-detector for the Aerogel RICH for the Aerogel RICH
RequirementsRequirements Can detect a single-photon with high efficiency.Can detect a single-photon with high efficiency. Have sensitivity to Have sensitivity to ~~ 400nm photons from aerogel rad400nm photons from aerogel rad
iators (due to Rayleigh scattering).iators (due to Rayleigh scattering). Can detect the position of photons withCan detect the position of photons with a resolution a resolution ~ ~ a few mm.a few mm. Immune to the high magnetic field (1.5 Tesla).Immune to the high magnetic field (1.5 Tesla).
HPD or HAPDHPD or HAPD may be the best candidates for the Photon-d may be the best candidates for the Photon-detector of the Aerogel RICH.etector of the Aerogel RICH. Fine-mesh PMT: Poor resolution for single photons.Fine-mesh PMT: Poor resolution for single photons. MCP-PMT: 60% collection efficiency.MCP-PMT: 60% collection efficiency.
3T. Sumiyoshi (TMU)30, Nov. 2004 RICH04@Playa del Carmen
Development of HPD and Development of HPD and HAPDHAPD
Develop a multi-anode Develop a multi-anode HPD/HAPD with HPD/HAPD with proximity focus.proximity focus.
Make the effective area Make the effective area as large as possible.as large as possible.
DEP catalogue
Photocathode PD/APDHV
e-Photons
Output8 kV
4T. Sumiyoshi (TMU)30, Nov. 2004 RICH04@Playa del Carmen
Development of HPD and Development of HPD and HAPDHAPD
Outer: 72x72 mm2
Effective : 59x59 mm2 (65%)Multi-anode:12x12=144 ch.Pixel Size: 4.9x4.9 mm2
Multi-anode (144ch) HPD/HAPD are under development in the cooperative work between Belle and HPK.
5T. Sumiyoshi (TMU)30, Nov. 2004 RICH04@Playa del Carmen
Prototype TestPrototype Test-Single Channel HPD--Single Channel HPD-
Single channel HPDSingle channel HPD Leak current : 4 [nA] Detector capacitance : 20 [pF] Gain (8kV) : 1500 [electron/photon] Bias voltage : 80 [V]
Fig.2 ; single photon response & multi photon response
1pe
2pe3pe
4peSensitive area: φ8[mm]
6T. Sumiyoshi (TMU)30, Nov. 2004 RICH04@Playa del Carmen
Single-channel Single-channel HPDHPD
Diode : □5 [mm/ch] : □5 [mm/ch] Gain : 26000 [electron/photon]Gain : 26000 [electron/photon] CCdd : 73 [pF] : 73 [pF] IILL : 14 [nA] (average/ch): 14 [nA] (average/ch) Condition: VCondition: VHVHV=8[KV], V=8[KV], VBIASBIAS=320[V]=320[V]
1pe
2pe
3pe
4pe
Prototype TestPrototype Test- 3×3multi-channel HAPD - 3×3multi-channel HAPD --
Although the gain of the HAPD is higher thanthe HPD, noise level is also higher due to its large detector capacitance.The HPD shows better single photon resolution.
53 φ
15mm
1pe
2pe3pe
4pe
7T. Sumiyoshi (TMU)30, Nov. 2004 RICH04@Playa del Carmen
Structure of HPD and Structure of HPD and HAPDHAPD
Two types of photodiodes are under development for the 4x(6x6) type HPD/HAPD.
APD: surface irradiation type. PD ; back irradiation type.
Can reduce dead area btw pixels (0.2->0.1mm)
p
pnn
Surface irradiation type Back irradiation type
Photo electron
APD PD
8T. Sumiyoshi (TMU)30, Nov. 2004 RICH04@Playa del Carmen
Total gains of HPD and Total gains of HPD and HAPDHAPD
Gain vs PC Voltage.
0
500
1000
1500
2000
2500
0 2 4 6 8 10
Photocathode Voltage [-kV]
Gai
n
0
5000
10000
15000
20000
25000
HPD2,000 at -8kV
HAPD14,000 at -8kV
9T. Sumiyoshi (TMU)30, Nov. 2004 RICH04@Playa del Carmen
Development of HPD and Development of HPD and HAPDHAPD
Leakage current vs Bias voltage.
1E-09
1E-08
1E-07
1E-06
0 50 100 150 200 250 300 350 400
AD Reverse Bias Voltage [V]
Leak
age
Cur
rent
(A
)
1E-01
1E+00
1E+01
1E+02
AD
Gai
n
Diode Leakage3x3 summed10nA/pixel
AD Leakage3x3 summed10nA/pixel
AD Gain
10T. Sumiyoshi (TMU)30, Nov. 2004 RICH04@Playa del Carmen
Timing structure of HPD and Timing structure of HPD and HAPDHAPD
Rise time
0
20
40
60
80
100
120
0 5 10 15 20 25 30 35 40
Time [ns]
Out
put V
olta
ge [A
rbitr
ary]
Diode (150V)Risetime : 7.3nsFalltime : 3.8ns
AD (320V)Risetime : 1.5 nsFalltime : 19.6 ns
11T. Sumiyoshi (TMU)30, Nov. 2004 RICH04@Playa del Carmen
Dead region of HPD and Dead region of HPD and HAPDHAPD
Dead region between the pads.
0
0.2
0.4
0.6
0.8
1
1.2
-0.5 -0.4 -0.3 -0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5Position (mm)
Outp
ut
HPD
HAPD
0.16mm
12T. Sumiyoshi (TMU)30, Nov. 2004 RICH04@Playa del Carmen
Development of HPD and Development of HPD and HAPDHAPD
Leakage current before and after activation of PC.
HPDHAPD
Basic performance has been studied with the 3x3 type HPD /HAPD. 3x3 ch HPD
No serious problem Higher EB gain than expected (1500 -> 2100).
3x3 ch HAPD Low yield of good quality APD’s. There is a HV leak from photocathode. High gain but very noisy. Further investigation is underway with a new production batch.
13T. Sumiyoshi (TMU)30, Nov. 2004 RICH04@Playa del Carmen
Development of a 12x12 Development of a 12x12 HAPDHAPD
Production of 12x12 multi-anode HAPD. 4x (6x6) APD is assembled in this bulb by a transfer technology.
After the activation many APD’s can’t sustain nominal bias voltage 380V.
73mm
14T. Sumiyoshi (TMU)30, Nov. 2004 RICH04@Playa del Carmen
Response of the 12x12 Response of the 12x12 HAPDHAPD
Single Photon Counting(Dark) SHP0016
0
50
100
150
200
250
300
350
400
450
0 500 1000 1500 2000 2500 3000 3500 4000
Output Pulse Height [ADC ch]
Cou
nt
Photocathode Voltage : -7kVAD Reverse Bias Voltage : -380VGuard Voltage : -180VAmplifier : 580KMeasurement ch : chip A - ch22
Response to a single photoelectron and multi-photoelectrons.
Pulse Height Distribution : SHP0016
0
100
200
300
400
500
600
700
800
900
1000
0 500 1000 1500 2000 2500 3000 3500 4000
Output Pulse Height [ADC ch]
Cou
nt
Photocathode Voltage : -7kVAD Reverse Bias Voltage : -380VGuard Voltage : -180VAmplifier : 580KMeasurement ch : chip A - ch22
Single Photoelectron Multi Photoelectron
15T. Sumiyoshi (TMU)30, Nov. 2004 RICH04@Playa del Carmen
Uniformity of a 6x6 APDUniformity of a 6x6 APD
12
34
56 6
4
2
0
0.2
0.4
0.6
0.8
1
Out
put (
No
rma
lize
d)
Channel x Channel y
12
34
56 6
4
2
0
0.2
0.4
0.6
0.8
1
EB
gai
n (N
orm
aliz
ed)
Channel x Channel y
Average=1660 (-8kV)
PhotocathodeEB gain
<1660>@-8kV
16T. Sumiyoshi (TMU)30, Nov. 2004 RICH04@Playa del Carmen
Uniformity of a 6x6 APDUniformity of a 6x6 APD
Avalanche gain<15>
Total gain<2.6x104>
12
34
56 6
4
2
0.0E+0
5.0E+3
1.0E+4
1.5E+4
2.0E+4
2.5E+4
3.0E+4
To
tal g
ain
Channel x Channel y
Average=2.6x104
12
34
56 6
4
2
0
0.2
0.4
0.6
0.8
1
Ava
lanc
he
gain
(N
orm
aliz
ed)
Channel x Channel y
Average=15 (385V)
17T. Sumiyoshi (TMU)30, Nov. 2004 RICH04@Playa del Carmen
Uniformity of a 6x6 APDUniformity of a 6x6 APD
Over all response QE x gain
12
34
56 6
4
2
0.0
0.2
0.4
0.6
0.8
1.0
Out
put (
No
rma
lize
d)
Channel x Channel y
Gain=2.6x104
18T. Sumiyoshi (TMU)30, Nov. 2004 RICH04@Playa del Carmen
Readout ElectronicsReadout Electronics
Total number of readout channels for theTotal number of readout channels for the full detector amounts to 120k.full detector amounts to 120k. Detector characteristics Detector characteristics
Leakage current 10 or Leakage current 10 or 2525 [[ nAnA ]] Detector capacitanceDetector capacitance ; ; 10 or 10 or 7070 [[ pp FF /pixel/pixel ]] signalsignal ;; 2000 or 2000 or 2000020000 [electron/photon] [electron/photon]
Need high density front-end electronics.Need high density front-end electronics. Need high gain with very low noise amplifiers.Need high gain with very low noise amplifiers. Deadtimeless readout scheme-> Pipeline.Deadtimeless readout scheme-> Pipeline.
Develop an ASIC for the front-end electronicsDevelop an ASIC for the front-end electronics
19T. Sumiyoshi (TMU)30, Nov. 2004 RICH04@Playa del Carmen
Basic parameters for the ASIC (Rohm CMOS 0.35[μm])Rohm CMOS 0.35[μm]) Gain : 5 [V/pC] Shaping time : 0.15 [μs] VGA : 1-16 S/N : 8 (@2000[e]) Readout : pipeline with shift register Package : 18 channels/chip Control : LVDS Power consumption : 5 m W/channel
Readout ElectronicsReadout Electronics
□4.93[mm]
Made through VDEC
Preamp Shaper VGA Comparator Shift register
20T. Sumiyoshi (TMU)30, Nov. 2004 RICH04@Playa del Carmen
Readout ElectronicsReadout Electronics
Current n oise performance 4000 enc: about twice of SPICE
simulation. It could be made half in the next iteration.
Threshold behavior. It works as expected.
21T. Sumiyoshi (TMU)30, Nov. 2004 RICH04@Playa del Carmen
SummarySummary
12x12 HAPD is under development for the photon detectors 12x12 HAPD is under development for the photon detectors of the proximity focusing RICH whichof the proximity focusing RICH which
is a good candidate of the Belle PID system in future. is a good candidate of the Belle PID system in future. There still remains some problems:There still remains some problems:
APD leakage current goes up after the activation of PC.APD leakage current goes up after the activation of PC. Some APD can’t keep nominal bias voltage.Some APD can’t keep nominal bias voltage.
For a readout of many anode signals (120k ch.),For a readout of many anode signals (120k ch.), we have been developing an ASIC. we have been developing an ASIC.
Basic performance was checked by test pulses.Basic performance was checked by test pulses. Need minor modification for a further improvement of noiseNeed minor modification for a further improvement of noise level (current S/N 5 →level (current S/N 5 → 8) 8) . .