Surface and Thin Film Analysis II: Solving Real Problems in … · 2009-05-29 · M.Anderle -SIMS-...
Transcript of Surface and Thin Film Analysis II: Solving Real Problems in … · 2009-05-29 · M.Anderle -SIMS-...
Surface and Thin Film Analysis II:
Solving Real Problems
in Materials, Nano and Bio
Mariano AnderlePromozione e internazionalizzazione del Sistema
Trentino della Ricerca
Dipartimento Innovazione, Ricerca e ICT
Provincia Autonoma di Trento
web: www.marianoanderle.it e-mail: [email protected]
Outline I and II
•Vacuum and Surfaces
• Dynamic and static SIMS
• Principle
• Instrumentation
• Applications
• XPS, Auger
• Principle
• Instrumentation
• Applications
• Surface Technique Integrated Use
• Some examples
Università di Torino, Corso di Laurea in Fisica 27 maggio 2009
M.Anderle -SIMS- Università degli Studi di Torino, 26 maggio 2009
Vacuum
Coverage time
t= 3x10-6/pp pressure in mbar
p ~ 10-6 mbar t ~ sec
p ~ 10-9 mbar t ~ h
tmeas < t
M.Anderle -SIMS- Università degli Studi di Torino, 26 maggio 2009
Vacuum
p ~ 103 mbar l ~ 2.3*10-7 m
p ~ 10-3 mbar l ~ 2.3*10-1 m
p ~ 10-6 mbar l ~ 2.3*102 m
l 2.3*1041
p
l kT
2d21
p
Mean free path l
With p pressure in mbar and l mean free path in meter and T=300K:
THE CLUSTER LABORATORY
M.Anderle -SIMS- Università degli Studi di Torino, 26 maggio 2009
Mass Spectrometry Base Process
Particles Emission (Sputtering)
Particles Emitted Ionization
M.Anderle -SIMS- Università degli Studi di Torino, 26 maggio 2009
Dynamic SIMS Static SIMS
• Material removal
• Elemental analysis
• Profiling
• Ultra surface analysis
• Elemental or molecular analysis
• Analysis complete before significant
fraction of molecules destroyed
Analytical Modes of SIMS ISi JPY
ii
M.Anderle -SIMS-
Dynamic/Static ISi JPY
ii
M.Anderle -SIMS-
Dynamic, Static and Imaging SIMS
primary ion
secondary ions and neutrals
(atoms and molecules)
uppermost layer
The Secondary Ion Mass Spectrometry technique (SIMS) is the most sensitive of all the
commonly-employed surface analytical techniques - this is because of the inherent
sensitivity associated with mass spectrometric-based techniques.
There are three different variants of the technique:
Dynamic SIMS
used for obtaining compositional information as a function of depth below the surface
Static SIMS
used for sub-monolayer elemental analysis
Imaging SIMS
used for spatially-resolved elemental analysis
M.Anderle -SIMS-
Magnetic Sector
(Cameca 6f)
Advantages:
- high mass resolution (20000)
- high sensibility
- good depth resolution
- well defined analytical
methodology
Disadvantages:
- related impact energy and angle
- sputtering rate modification for
grazing angle
Quadrupole
(PHI 1010)
Advantages:
- unrelated impact energy and
angle
- low impact energy
- high depth resolution
- well defined analytical
methodology
Disadvantages:
- bad mass resolution (300)
- bad sensibility
ToF-SIMS
(TOF-SIMS IV)
Advantages:- high mass resolution (10000)
- high transmission
- high lateral resolution
- parallel detection
Disadvantages:
- analytical methodology not
well defined
- fixed incidence angle
Platform Comparison
M.Anderle -SIMS-
Dynamic SIMS: Depth Profile
M.Anderle -SIMS-
Normalized at 56Si2 ptp
3keV Implant
0 20 40 601E16
1E17
1E18
1E19
1E20
1E21
As/Si 2E15 at/cm2 @ 3keV
Co
nc
en
tra
tio
n (
at/
cm
3)
Depth (nm)
D-SIMS @ 1.0 keV
D-SIMS @ 0.5 keV
D-SIMS @ 0.3 keV
Best detection limit @ 1
keV impact.
At 300 eV altered layer
minimized
13
Characterization of Temperature Effect
on Film Growth
Extent of reaction increases with surface temperature
thermally activated process 1.6 1.8 2.0 2.2
10-10 G
row
th R
ate
(A
/Cycle
)
2*10-10
3*10-10
Inte
gra
ted
SiF
4 S
ign
al P
er
Cycle
1000/T (K-1)
1
10
MS
SIMS
0 20 40 60 80 100 120
0.0
8.0x10-11
1.6x10-10
2.4x10-10
3.2x10-10
4.0x10-10
Inte
nsit
y (
A)
Scan Number
SiH4
Exposure
WF6
ExposurePurge Purge
H2 signal SiF4 signal
175 ℃
225 ℃
275 ℃
325 ℃0 20 40 60 80 100
0
1x104
2x104
3x104
4x104
175 c
225 c
275 c
325 c
CsW
Co
un
ts
Depth (nm)
SIMS Result
W. Lei, L. Henn-Lecordier, M. Anderle, G. W. Rubloff, M. Barozzi and M. Bersani,
“Real-time observation and optimization of tungsten atomic layer deposition process cycle”,
J. Vac. Sci. Technol. B 24(2) (2006) p780-789.
M.Anderle -SIMS-
Mass Spectrum
M.Anderle -SIMS- Università degli Studi di Torino, 26 maggio 2009
0
2000
4000
6000
8000
10000
12000
20 40 60 80 100 120 140 160 180 200
m/z
C CO O
OO
CH2
CH2
104
148
149
193
Positive TOF-SIMS Spectrum of PET
Fragments allow the molecular structure of the polymer to be defined.
M.Anderle -SIMS- Università degli Studi di Torino, 26 maggio 2009
0
200
400
600
800
1000
1200
1400
200 250 300 350 400 450 500 550 600
m/z
+H C CO O
O
M
2 2HO CH CH M
237
341
(2M+H)+
385
(3M+H)+
577
Positive TOF-SIMS Spectrum of PET
The repeating peak patterns confirm the polymerization structure.
Low-k for faster interconnects and improved device performances
faster
0
5
10
15
20
25
30
35
40
0.65 0.5 0.35 0.25 0.18 0.13 0.1
Generation (MFS, µm)
Dela
y [
ps]
device
alone
Al + SiO2
interconnects
Cu + low K
interconnects
circuit speed
slower
time to propagate signal along interconnect
between devices is an RC delay
Al ( 3.0 mW cm) SiO2 (K=4.0)
Cu ( 1.7 mW cm) low-K (K=2.0)
low-k is achieved by
decreasing bond polarizability(using organosilicate, polymers, …)
lowering the density(foamed and porous materials)
metal dielectric
Microelectronics: Low K Materials
PROCESS FLOW SCHEMATIC spin-casting of porous low-K film
low-k matrix resin (PMSSQ)
porogen (PMMA co-DMAEMA)
solvents
spin castinginitial cure
template formationfinal cure
porogen volatilization
annealing
transformations & kinetics
ELECTRICAL PROPERTIESdepend on both:
STRUCTUREpores quality/quantity
MATERIALScharacteristics
Microelectronics: Low K Materials
mass200 400 600
x105
0. 0
1. 0
2. 0
3. 0
4. 0
5. 0
6. 0
7. 0
8. 0
inte
nsit
y
x600
Compression Fact or : 52
mass200 400 600
x106
0. 0
0. 2
0. 4
0. 6
0. 8
1. 0
inte
nsit
y
x600
Compression Fact or : 52
mass200 400 600
x105
0. 0
1. 0
2. 0
3. 0
4. 0
5. 0
6. 0
7. 0
8. 0
inte
nsit
y
x600
Compression Fact or : 52
curing @ 50 °C x 3’
curing @ 225 °C x 1 h
curing @ 450 °C x 2 h
high mass ions progressively disappear upon annealing
• self-consistent identification of the “key” species
• “key” peaks intensity depends on the annealing T
MSSQ, transformation upon curingSSIMS, negative SI
Microelectronics: Low K Materials
TOF SIMS
1
10
100
1000
10000
100000
1000000
D OD CN C2N CNO C5 C6 C8 C9
50 °C x 3'
125 °C x 1h
225 °C x 1h
275 °C x 1h
325 °C x 1h
450 °C x 2h
pure, 50 °C x 3'
inte
nsity
PMMA
fragments
DMAEMA
ligand
porogen “backbone”
DMAEMA cleavage and evolution@ 225-275 °C (90%)remaining transforms by > 325 °C
PMMAno apparent trasformation until > 325 °C
SI species selectively related to PMMA and DMAEMA
NO porogen residuals by curing @ 450 °C
POROGEN,transformations upon curingPseudo-DSIMS, negative SI
NO backbone alteration until > 325 °C
CD2 C
CD3
x
OC C O
y
CH3
CCH2
OO
CD3 CH2
CH2
N
CH3 CH3
DEDUCTIONS:
• a different behavior for the ligand / backbone, PMMA / DMAEMA is observed
• the residual amount of porogen vs curing T can be evaluated
Microelectronics: Low K Materials
TOF SIMS
Several features of MATERIALS
TRASFORMATIONS and KINETICS in the
FORMATION of porous low-k can be
evaluated by means of ToF-SIMS
MATRIX and POROGEN transformations
are COMPETING upon curing. The
transformation kinetics can influence the
final low-k electrical properties and requires
to be evaluated
50 100 150
-3
-2
-1
0
10
10
10
10
rela
tive inte
nsity
200 250 300 350 400 450
fading ofprecipitates
appearance of porogen precipitates
annealing T [°C]
different behavior forPMMA and DMAEMAPMMA
DMAEMA
PMSSQ degree of curing
Si 7O 10C7H 21
Si 6O 10C5H 15
(pos. SI)(neg. SI)
Microelectronics: Low K Materials
porogen transformations:
mechanisms and kinetics are illustrated by the markers related to the PMMA/DMAEMA ligand /backbone
low-k transformations:
the “actual” chemical/compositional state of MSSQ is depicted by SSIMS
polymerization / crosslinking is pointed out by the vanishing of the “key species” (PMSSQs oligomers)
M.Anderle -SIMS-
Imaging SIMS
Images
Spatial resolution Spatial resolution
M.Anderle -SIMS-
Ion sources
as spun / curing < 225 °C
225 °C < curing < 450 °C
POROGEN AGGLOMERATES
agglomerates density dependson curing T
agglomerates composition(PMMA/DMAEMA ligand/backbone)depends on curing T
Field of view: 10.0 x 10.0 mm2
2 mm
POROGEN,transformations upon curingimaging ToF-SIMS, negative SI
DEDUCTION: porogen transformation includes precipitation and segregation phenomena
lateral inhomogeneities
Microelectronics: Low K Materials
TOF SIMS
M.Anderle -SIMS-
Images
M.Anderle -SIMS-
Images
AgBr microcrystals
Br red
I yellow
Cl white
Dopant segregation
at grain boundaries
of alumina
M.Anderle -SIMS-
Images
Localization of In and Al in kidney cells
M.Anderle -SIMS-
Images
M.Anderle -SIMS-
Images
Main advantages and drawbacks
ADVANTAGES
Sensitivity 1ppm-1ppb
All elements are detectable
Isotopic detection
Good depth resolution
Lateral resolution
Quantification
Insulators are analyzable
DRAWBACKS
Ion yield up to 6 orders of magnitude
Strong matrix effects
Depth resolution depends on sample morphology
Specific standards are required
Destructive technique
Elastic reflected electrons (BE)
BE which lost
characteristic
energy:
• core level
ionization
• plasmon
excitation
Auger electrons
Secondary electrons (SE)
Differentiated Auger spectrum
Ejected Electrons
Kinetic Energy (eV)
Escape depth l as a function of electron energy
XPS-ESCA
X-ray Photoelectron Spectroscopy
Electron Spectroscopy for Chemical Analysis
electrons (E0, k0, s) electrons (E, k, s)
e.m.radiation (hn0, k0, polarization)
e.m. radiation (hn, k, polarization)
atoms (E0, k0, Z)
ions (E0, k0, Z) ions (E, k, Z)
atoms (E, k, Z)sample
XPS
Principle
Base principle of the technique is the photoelectric effect
Principle
Principle
• Electrons ejected from the solid surface keep memory
of the chemical element are coming from!
• Beeing able to discriminate photoelectrons with
different energy means to measure the chemical
composition of the solid surface!
Electron
Energy
Analyser
Sample
Chamber
Pumping
System
Source
Load Lock
e-
Detectore-
hn
Apparatus
•To avoid the electron collisions in the path from
surface to analyzer => P<10-3 Pa
• To avoid surface contamination during the
measurements => P<10-6 Pa
=> The electron spectroscopy techniques utilize
Ultra High Vacuum (UHV) conditions
Vacuum
Source
Ek=hn - Eb - Fhn
Analyser
Core level
Ek
FVacuum Level
Fermi Level
X Photons => XPS => Core Level
UV Photons => UPS => Valence Bandhn=>
Source
Ek = f ( EB )
EB is specifically related to the chemical element where the
electron is coming from!
• measuring Ek of the ejected electrons we can study the
elemental chemistry of the sample surface.
• the photoelectronic peak width Ek is directly correlated to
the width of source peak hn, beeing the core level peak
negligible and the work function F constant.
Main features:
• hn ~ 1 keV
• FWHM < 1 eV
• Intense beam
• Compatible with UHV
Source
Source
Source
The presence of a background radiation (Bremsstrahlung) limits
the energy resolution. An aluminum foil between the source and
the sample helps to reduce this Bremsstrahlung effects!
Monocromatic source
Source
Source
To focus monocromatic X
ray beam on the sample,
quartz crystal, X ray
source and sample have
to stay on the same circle
(Rowland circle).
• UV Sources
Gas discharge
He I (21.2 eV), He II (40.8 eV)
• Syncrotron radiation
Monocromatic light with high
intensity and variable energy
Other sources
Analyzer
CHA - Concentric Hemisphere Analyzer
V2 - V1 = Uk = Ue (R2/R1 - R1/R2)
26/05/2009 50
OPTIMISATION OF SOFT TISSUE
ADHESION TO DENTAL IMPLANTS
membrane
gingival cell
integrin receptor
titanium alloy
plasma treatment for -NH2 introduction
Peptide adhesion
Implanted titanium screw
polished cervical
margin
abutment of
titanium alloypolished and smooth
transmucosal collar
rough endosseous
part (pure
titanium)
Resistance to transverse force component
Shorter to avoide neurological problems
Deporter, D.A., Todescan, R. et al.
Length
(mm)# Used # Failure % Failure
7 44 1 2.3
9 89 4 4,5
12 16 2 12,5
Overall 5 year failure rate = 4,6%
A Biological Functionalization to Stimulate the Soft Tissue
Adhesion
- Titanium alloy surface coating using a plasma assisted chemical vapor deposition process (PACVD) to reduce ion release from titanium and provide an amine-containing layer with adequate stability;
- PEG molecules immobilization creating a protein-resistant (non-fouling) surface;
- Cell adhesive, RGD-containing peptides immobilization stimulating the formation of the biological seal between the soft tissue and the implant.
Spectrum
800 600 400 200 0
0
5000
10000
15000
20000
25000
30000
35000
C
N
Ti
O
XPS survey spectrum
Cou
nts
Binding energy (eV)
UHV Plasma treatmentson Ti Al V alloy surface for
primary amine (NH2) group links
Spectrum
UHV Plasma treatmentson Ti Al V alloy surface for
primary amine (NH2) group links
404 402 400 398
4000
5000
6000
7000
8000
9000
other N species
NH4+
NH2
Counts
Binding energy (eV)
b
ECM proteins and integrin receptors
GLY-ARG-GLY-ASP-
-SER-TYR-CYS
RGD
Adhesion
Peptide
Fibronectin
Titanium alloy functionalization: Overview
Step 1: amide bond through the N-hydroxysuccinimide ester (NHS)
Step 2: thiol chemistry (Vinylsulfone)
Fluorescent derivative PEG: 5.5 · 1013 molecules/cm2
?
Titanium alloy functionalization: XPS analysis
Ti TiC
TiC+pep
Ti+pep
Titanium alloy functionalization: Human gingival cells (HGF-1) adhesion
Cell images obtained with a laser scan
microscope (a and b) and with a scanning
electron microscope (a1 and b1)
a
b b1
a1
RGD modified titanium alloy
titanium alloy
cells density on different substrates
17.500 cell/cm2
Incubation 24 h in serum free medium plus
cycloheximide (25 ug/ml)
Electron spectroscopy (ESCA) analysis of chitosan films
chitosan is obtained from chitin by deactylation.
Chitin Chitosan
OH
CH2
CHCH
CH
CH
CH
O
NH
CO
CH3
OH
O OH-
+ +
O-
C O
CH3
n
OH
CH2
O
CH
CH
CH
CH
CH
O
NH2OHn
Nitrogen spectrum
Carb
on s
pectr
um
Oxyg
en
sp
ectr
um
Spectrum
Different energy lines (different values of EB) describing different
core levels characteristic of the specific material (Pd).
Auger line too!
CHEMICAL SHIFT
Quantification
Relative sensitivity factors
Depth Profiling
Depth Profiling
Increasing the lateral resolution of the technique
Spectromicroscopy
• focusing the X rays on
a small surface area
• detecting the electrons from
a small surface area
Spatial mode
Microelectronics: Oxynitrides
0.10 mm
good masking characteristic against impurity and dopant diffusion
0.25 mm
Oxynitrides advantages with respect to conventional SiO2:
good technological compatibility with new generation materials
better resistance to radiation damage and carrier injection
better resistance to dielectric breakdown
suitable dielectric constant
Microelectronics: Oxynitrides
Si
SiOxNy
SiO2
Nitrided
region
Thickness
10 nm
Precursor:
Thermal treatment:
Reoxidation:
N2O
NO
Furnace
RTA
Dry
Wet
Sample # Oxidation Precursor Temperature Time
1 Dry N2O T2 t
2 Dry N2O T3 t
3 Dry N2O T3 2t
4 Wet N2O T2 t
5 Wet N2O T3 t
6 Dry NO T1 1.5t
7 Dry NO T1 3t
8 Dry NO T1 6t
9 Dry NO T2 3t
10 Dry NO T2 6t
Useful to obtain:
• Depth Profile
• Mass Spectra
• Bulk Analysis
• Ion Images
Vacuum: <10-7 Torr
Sputtering Rate: 0.1 20 Å/s
Primary Ions Energy: 0.25 15 keV
Primary Beam Current Density: nA/cm2 mA/cm2
Dynamic SIMS
Microelectronics: Oxynitrides
X RADIATION
PHOTOELECTRONS
DETECTOR
• surface chemical composition
• chemical bonds
n BK EhE
= 90 d = 5-6nm
= 165 d = 2 - 3nm
BiomaterialsMicroelectronics: Oxynitrides
XPS (X-ray Photoelectron Spectroscopy)
Microelectronics: Oxynitrides
0 50 100 150 200 250 300 350 40010
0
101
102
103
104
105
106
CsN+
CsO+
CsSi+
Cs2N
+
Cs2O
+
Cs2Si
+
Co
un
ts (
a.u
.)
Depth (A)
Dynamic SIMS
-10 -8 -6 -4 -2 0 2 4 6 8 10
1019
1020
1021
1022
SiO2/Si interface
Si
sample 1
sample 2
sample 3
sample 4
sample 5
Co
nc
en
tra
tio
n (
at/
cm
3)
Distance to Interface (nm)
101
102
103
104
105
Co
un
ts
Microelectronics: Oxynitrides
N2O
Dynamic SIMS
-10 -8 -6 -4 -2 0 2 4 6 8 10
1019
1020
1021
1022
SiO2/Si interface
Si
sample 6
sample 7
sample 8
sample 9
sample 10
Co
ncen
trati
on
(at/
cm
3)
Distance to Interface (nm)
101
102
103
104
105
Co
un
ts
Microelectronics: Oxynitrides
NO
Dynamic SIMS
Nitrogen
Profiles
12 10 8 6 4 2 0 -2
1
2
3
4
SiO2/Si interface
sample 1
sample 2
sample 3
sample 4
sample 5
sample 8
sample 9
sample 10
Ato
mic
Co
nc
en
tra
tio
n (
%)
Residual thickness (nm)
Microelectronics: Oxynitrides
XPS (X-ray Photoelectron Spectroscopy)
Microelectronics: Oxynitrides
Sample #N integral
(at/cm2)
SIMS peak
concentration (at/cm3)
Peak position
(nm)
XPS peak
concentration (%)
1 6.0 x1014 2.2 x1021 -1.3 1.08
2 1.3 x1015 4.1 x1021 -1.8 1.74
3 1.4 x1015 3.6 x1021 -1.4 1.93
4 6.0 x1014 2.3 x1021 -1.4 0.74
5 1.3 x1015 4.1 x1021 -1.8 1.84
6 9.0x1014 3.0x1021 -1.3 -
7 1.1x1015 3.9x1021 -0.9 -
8 1.5x1015 4.8x1021 -1.1 2.76
9 1.7x1015 5.6x1021 -1.2 2.90
10 2.0x1015 6.5x1021 -1.3 3.52
402 400 398 396 394
bulk
peak
interface
N 1s
Ph
oto
em
issio
n In
ten
sit
y (
a.u
.)
Binding Energy (eV)
sample 3
sample 10
12 10 8 6 4 2 0 -2
398.0
398.5
399.0
EN1s
in Si3N
4
SiO2/Si interface
EN
1s (
eV
)
Residual Thickness (nm)
sample 1
sample 2
sample 3
sample 4
sample 5
sample 8
sample 9
sample 10
Microelectronics: Oxynitrides
XPS (X-ray Photoelectron Spectroscopy)
TECHNIQUE
XPS AES UPS SIMS TOF-SIMS SNMS XRD
Source X-Ray
(Mg, Al) Electrons
Photons UV (HeI, HeII)
Ions Ions Ions X-Ray (Cu)
Particle Photo-
Electrons Auger
Electrons Photo-
Electrons Secondary
Ions Secondary
Ions Neutrals post-
ionized X-Ray
Lateral Resolution
10 µm 0-2 µm No 0.5 µm 0-1 µm No No
Sensitivity 0.1 % at. 0.1% at. Parameter
without meaning
10-4÷10-6 % at.
10-4÷10-6 %
at.
10-2÷10-4 % at.
0.5 % at.
Sampling Depth 2÷20 atomic-
layers
2÷20 atomic- layers
2÷3 atomic- layers
2÷3 atomic- layers
2÷3 atomic- layers
2÷3 atomic- layers
50 µm
Main Features Information on chemical
bond
High spatial resolution
High sensitivity to valence
band
High sensitivity
to elements
Information on surface chemistry
Elemental Sensitivity &
Easy quantification
Structural Information
Instrument at ITC-irst
SCIENTA 200
Physical Electronics
PHI 590 PHI 4200
Physical Electronics
PHI 545
CAMECA IMS 4f
CAMECA SC Ultra
CAMECA ION TOF IV
Leybold Heraeus
INA 3
Ital-structures
Surface and Interface Analysis
AESAuger Electron Spectroscopy
A E S
e.m.radiation (hn0, k0, polarization)
e.m. radiation (hn, k, polarization)
atoms (E0, k0, Z)
ions (E0, k0, Z) ions (E, k, Z)
atoms (E, k, Z)sample
electrons (E0, k0, s) electrons (E, k, s)
AES
Principle
Possible de-excitation processes
due to electron bombardment
A E S
Auger and fluorescence efficency for a K vacancy as a function of atomic number, Z
Auger (continuos) and fluorescence (dashed) efficiency for K, L, M vacancies as a function of atomic number, Z
AES A E S
AES A E S
AES
Analytical information from:
Peak energy ==> What (qualitative)
Peak shape and energy ==>How (chemistry)
Peak intensity ==> How much (quantitative)
AES Spectrum A E S
Transition elements 3d
Transition elements 3d
M2,3VV L3M2,3V
L3M2,3 M2,3 L3VV
Characteristic features
•LMM triplet:
L3 M2,3 M2,3
L3 M2,3V
L3VV
• Peak M2,3VV at
lower energy
100 200 300 400 500 600 700 800 900
Cl
Ni
SNi
Ni
Ni
O
CdN
(E)/
dE
Kinetic Energy (eV)
100 200 300 400 500 600 700 800 900
S
Ni
Ni
Ni
C
ClNi
O
N(E
)
Kinetic Energy (eV)
Energy ==> information about the chemical elements
40 50 60 70 80 90 100 110
Elemental Silicon
Kinetic Energy [eV]
N(E
)/E
40 50 60 70 80 90 100 110
Elemental Silicon
dN
(E)/
dE
Kinetic Energy [eV]
220 230 240 250 260 270 280 290
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
220 230 240 250 260 270 280 290
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
220 230 240 250 260 270 280 290
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
diamante
carbonio amorfo
Inte
nsity [arb
. un
its]
Kinetic Energy [eV]
grafite policristallina
Example: C KVV
Example: Si LVV
40 50 60 70 80 90 100
Silicon Oxide
N(E
)/E
Kinetic Energy [eV]
40 50 60 70 80 90 100
Silicon Oxide
dN
(E)/
dE
Kinetic Energy [eV]
Auger line energy and shape ==> information about element chemistry
Analyzer
CMA Cilindric
Mirror
Analyzer
A E S
AES apparatus A E S
AUGER depth profiling A E S
Cr50nm
Ni65nm
Cr
0 5 10 15 20 25 30 35 40
0
20
40
60
80
100
conce
ntr
azi
one a
tom
ica r
ela
tiva
tempo di sputtering [min]
Ni1
Cr2
O1