Suppressing Power and Ground Noise

8/8/2019 Suppressing Power and Ground Noise

http://slidepdf.com/reader/full/suppressing-power-and-ground-noise 1/75

1

Suppressing Power and Ground Noise in High

Performance Consumer

Electronics

PP

anasonicanasonic

EE

lectroniclectronic

DD

evices,evices,

Co. LtdCo. Ltd

Hiroshi Higashitani Hiroshi Higashitani



2

Agenda

Suppressing Power and Ground Noise in High Performance Consumer Electronics

– Reducing EMI/EMC problems early in the design cycle using a virtual design process hasbeen a dream for many engineers fettered with the problem of fixing complex coupling issues

on nearly finalized designs. However, the complexity of designs, the lack of tools, and anunder-appreciation for today’s compute power has limited the widespread adoption ofsimulation in this area.

– Working together with Panasonic, Ansoft has created a reliable methodology that enablesvirtual design for today’s complex EMI/EMC problems. The author will first discuss commonproblems high speed board designers face when working to meet challenging noise andperformance specifications. Next, using a reference design board, attendees will witnesshow to quickly and accurately predict and suppress board resonances. The design flowproposed will illustrate how to use 3D extraction together with advance circuit simulation andcommon EDA layout tools to pin-point the problems before the actual production of theboard. The insight provided by simulation will be highlighted, design changes that addressthese issues will be made, and the new design will be re-simulated.

– Proper measurement techniques will be shown and discussed. Next, results that validate

the method and compare the simulated and measured results for the original design as wellas the improved design will be shown. Ample time will be allotted so that engineers wishingto engage engineers from Panasonic and Ansoft directly can do so either during and/or afterthe presentation.



3

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Module BU

Printed Circuit

Board BU

Inductive

Products BU

Circuit

Components BU

Electro-

Mechanical BU

Speaker BU

Main Products in PED



4

PowerSupply

Power Choke CoilPower Choke Coil

Switching Loss Switching Loss

SPSP--CapCap

Radiation Noise Radiation Noise

R,C,BeadR,C,Bead--Array &Array &

RCRC--NetworkNetwork

Mounting Issue Mounting Issue

(Area & Cost) (Area & Cost)

Common ModeCommon Mode

Noise FilterNoise FilterCommon Mode Common Mode

Noise Noise

2 Mode Noise Filter2 Mode Noise Filter

Common & Normal Common & Normal

Mode Noise Mode Noise

We prov ide t he best so lu t ion !! We prov ide t he best so lu t ion !! We prov ide t he best so lu t ion !!

For Good Qual i t y & Good Per form anc e For Good Qual i t y & Good Per form anc e For Good Qual i ty & Good Per form anc e

PED Device Solution

ChipChip VaristorVaristorESD Noise ESD Noise

ESD SuppressorESD Suppressor

① Radiation noiseRadiation noise

reductionreduction

② Noise reductionNoise reduction

for Parallel data bus linefor Parallel data bus line

③High speedHigh speed

differential transmissiondifferential transmission

Interface Interface



5

PowerSolutionPowerPowerSolutionSolution

EMI/ESDSolution

EMI/ESDEMI/ESDSolutionSolution

CapacitorsSolution

CapacitorsCapacitorsSolutionSolution

ZNRNRhiphip Thermistorhermistor Chiphip Varistoraristorhip Lhip L

ChipChip ＲＲ ChipChip Ｒ（Ｒ（ArrayArray））ＲＣＲＣ NetworkNetwork

CircuitCircuit

ProtectionProtection

ComponentComponent

22 ModeMode

Noise FilterNoise Filter

Chip Beadship Beads LC FilterC Filter

SPP-CAPAP Film Cilm C X-Y CondenserCondenserhip Film Chip Film C

Common ModeCommon Modeﾞ

Noise FilterNoise Filter

Ceramic CCeramic Chip Multilayer Ceramic Chip Multilayer Ceramic C

（MLCCLCC）Aluminum electrolytic CAluminum electrolytic C

Electric Double Layerlectric Double Layer

Ｃ

SolutionSolution

Smaller, High performance, and High Functionality

LCR Circuit Components

Power Choke Coilower Choke Coil Line Filterine FilterW TransformerW Transformerompression Coilompression CoilCurrent Sensorurrent Sensor

Rhoke Coilhoke Coil

LCR Main Product Line in PED



6

Array Chip Resistor（Usage: Pull-up, etc.）1005x4 Array Type 、8 Array TypeP/N:EXB28V､2HV 10 - 1M ohm

Chip Resistor： Serge R

（Usage：High Power Chip R）2012；1/4W、3216；1/3W、3225；

1/2WP/N:ERJP06､P08､P14 1 - 1M ohm

Multi-Layer Ceramic C

2012（4 Array）、 1410（2

Array）

P/N:ECJ Series

Chip Choke Coil（Usage：DC/DC Filter）P/N:ELL6U*** Type

Inverter Transformer（Usage： Back light）

Aluminum electrolytic capacitor

（Usage：AC/DC Voltage Supply）

For high ripple currentP/N:Snap-in terminal type EE series

Source SW Transformer（Usage：Resonator AC/DC）P/N: （Under development）

Film Capacitor（Usage：AC/DC Input

Filter）P/N:ECQUL***

Chip RC Network（Usage:One packing of RC ofthe data bus line. ）

2012 P/N:EZACT

Common Mode Noise Filter（Usage:IEEE1394/HDMI）

1210、

2010 P/N:EXC24CG、

EXC28CE

Micro Chip fuses

（Usage:In-rush current）1005､1608 P/N:ERBSE､SD type

Chip Multi-Layer Varistor（Usage: Static electricity ）

1005､1608、1410/2連 P/N:EZJZ series

EMI/ESD Filter（Usage: Digital Noise）

2012 EMI＋ESD Composit Function

SP-Cap/Polymer Aluminum Capacitors

（Usage: De-coupling）

7343 P/N:CD、LL series

Chip ESD Suppressor（Usage：Static electricity /for GHz Band）

1005､1608 P/N:EZAEG**

PGS/Graphite seat（Usage：High temperature conduction

600～800W/m・K）P/N:EYGA***

General and Source ComponentsGeneral and Source Components Noise Reduction ComponentsNoise Reduction Components

Protection ComponentsProtection ComponentsHeat Resistance ComponentsHeat Resistance Components

Tentative

fo r

LCD-TV

Noise, Thermal, and other Components



7

PTW

PMX

Electronic part special producing company 16 Part overseas production business place 2 Joint venture company 4 R&D base 4

P E DP E D

PEDUK

PEDEU

PEDEU-TC

PEDEU-SK

PEDMA

MEDEM

PEDSG-ST

PEDIDA

MAPREC

PEDHK

PEDJM

PEDTJ

PTCC

PEDBJ

PEDCBJ

PEDQD

PEDCA

PEDCA-TC

PEDCA-BC

PEDCA-TA

PACOB-AM

PEDTH

PEDSG-BT

PEDSG

Global production and R&D base list



10

http://industrial.panasonic.com/i/library.htmlWEB

New

Devices for EMIDevices for EMI Devices for ESDDevices for ESD

Cable IC

Radiation noiseRadiation noise

LS ISI

（oadoad）

New

New

Radiation noiseadiation noise

suppressionuppression

of power supply line.f power supply line.

EMI and ESD suppressionMI and ESD suppression

off

audio and video signaludio and video signal

line.ine.

Connector

Chip resistors （186 parts numbers ）

Chip inductors （45 parts numbers ）

LC-LR Composite Devices（9 parts numbers ） ESD Suppressor

（2 parts numbers ）

SP-Cap/Polymer Aluminum Capacitors（19 parts numbers ）

2 mode andCommon

mode noise filter（10 parts

numbers ）

Chip multi-layer ceramic capacitors＜MLCC’s＞（270 parts numbers）

Chip varistors（24 parts numbers ）

Uploaded Devices on PED WEB Site



11

Simulation analysis with substrate CAD data and Device Library

Evaluation blockcutting out

Eye pattern analysis TDR analysis

S parameterof circuit board

Circuit simulation

Transmissioncharacteristic analysis

Substrate CAD data

ICConnector

Material constant setting

Electromagnetic field analysis

ESD Suppressor

Chip varistorsCommonmodenoise filter

Device LibraryDevice Library

Simulation result

Simulationblock diagram

LCR solution activity flow



12

Device selection and recommendedpattern proposal

(Transientanalysis)

Circuit simulation

Radiation obstructionwave measurement

-200

0

200

400

600

800

1000

1200

-20 20 60 100 140 180

Tim es (nSe cs)

V

o l t s

( V

)

0

時間（nSec）

電圧（ V）

Electromagnetic radiatefield immunityexamination

Conduction obstruction wave

voltage measurement

Radiofrequencyconductionobstructionexamination

Simulation Noise evaluation at EMC SiteSelection of the

best parts

Analysis byelectromagnetic fieldprobe

①Solution corresponding to design phase

②Total solution with a lot of devices

LCR solution activity flow

Mass

production

PlanMaking

for trial purposesEvaluationCircuit design

Development step of set circuit design

Source GroundResonance Analysis

ｔ

Ｉ

ｔ

Vｔ

Ｉ

ｔ

V

-100

-80

-60

-40

-20

0

20

(Frequency analysis)

S21(dB)



13

Simulation analysis tool and analytical routine

ＣＡＤ data

Transmission characteristic

１）TDR ２）Eye pattern

Ansoft Designer and NEXXIM

Allegro PCB

gerber

Zuken Convert

anf file

DXF file

ALIVH-DK HFSS

SI-Wave

Ansoft Designer(Planar EM)

S parameter / Co-simulation

Ansoft Links

Current distributionand magnetic field distribution

gds file

Convert

DataLink

HFSS

Radiation characteristic

ＣＡＤ tool

ＣＡＤ・Design tool

Power supply resonancecharacteristic

Circuit board data

Device Library



14

LCR Solut ionCRCR Solut iono lu t ionPassive Component sassiveassive Componentsomponents

Noise SuppressionComponents



15

Signal Line Source LineCapacitance (F)10pF 1nF 0.1uF 10uF 1mF 1F

Smaller ：0402 High Capacitor ：100uF

Film

Polymer

Aluminum electrolytic

Electric Double

Layer Capacitor

DC/DC LSI

MLCC

Low ESL：GH

ｚLow ESR

Usage

Oscillation and Synchronization

Time Constant Circuit

Coupling, Bias

Decoupling and Smoothing

Backup

Rival zone

ComponentSelection

（Example）

Miniaturization and lightening

capacity stability no piezo-electric

Excellent decoupling

Ripple

High power・Rapidelectrical charge anddischarge

Emission Noise Reduction and DC Source Capacito

Unnecessary radiation noise reductionon Power supply line



16

0

5

10

15

0 200 400 600 800 1000

周波数(MHz)

ｲﾝﾋﾟｰﾀﾞﾝｽ ( Ω

High Frequency Impedance Characteristics

I m p e

d a n c e ( Ω )

DC/DC

LINE

DecouplingCapacitor

ESR

ESL

Operationclock

Low Impedancewith reduction of ESL

Specialty Polymer AluminumCapacitor

- Smoothing ripple

voltage - Less load fluctuation

0

50

100

150

0.1 1 10 100 1000 10000

SP-Cap

MLCC

Polymer Tantalum

Frequency(kHz)

Tantalum

Frequency(MHz)

LSI

C a p a c i t a n c e ( u F

)

(1)

(7)

(1)Mold resin (2)Silver paint(3)Carbon (4)Specialty polymer

(5)Aluminum foil (6)Internal terminal

(7)External terminal

A large capacity

Low ESR

Low ESL

Polymer Tantalum Capacitor

SP-Cap/Polymer Aluminum Capacitors



17

-100

-80

-60

-40

-20

0

20

Simulation Example (Frequency analysis)

LSI

LSI

１

4 pieces

1GHz 10GHz100MHz10MHz1MHz100KHz

23

1S21 (dB) １

Characteristic of Insertion loss with each capacitor

LSI

LSI

2

3

LSI

LSI

SP-Cap、Ceramic C

NEW SP-Cap（Low ESL）

2 pieces

1 pieces

Aluminum electrolysis（3）

＋3 terminal capacitor

Emission Noise Reduction for DC Source

decrease

Simulation



18

Uploaded Devices on PED WEB Site

http://industrial.panasonic.com/i/library.htmlWEB

Chip inductors （45 parts numbers ）

Chip resistors （186 parts numbers ） Radiation noiseRadiation noise

LS ISI

（oadoad

）

New

Devices for EMIDevices for EMI Devices for ESDDevices for ESD

Cable IC

New

New

EMI and ESD suppressionMI and ESD suppression

off

audio and video signaludio and video signal

line.ine.

Radiation noiseadiation noise

suppressionuppression

of power supply line.f power supply line.

Chip multi-layer ceramic capacitors＜MLCC’s＞（270 parts numbers）

SP-Cap/Polymer Aluminum Capacitors（19 parts numbers ）

Connector

LC-LR Composite Devices（9 parts numbers ） ESD Suppressor

（2 parts numbers ）

2 mode andCommon

mode noise filter（10 parts

numbers ）

Chip varistors（24 parts numbers ）

N i R d ti : DC P



19

0

10

20

30

40

50

60

70

Level [dBµV/m]

30M 50M 70M 100M 200M 300M 500M 700M 1G

Frequency [Hz]

Level [dBµV/m]

10

20

30

40

50

60

70

030M 50M 70M 100M 200M 300M 500M 700M 1G

Frequency [Hz]

Before

Actual Measurements (Example：Emission

Measurements）

Noise Reduction measure: DC Power

Line

Actual Test

0

10

20

30

40

50

60

70

30M 50M 70M 100M 200M 300M 500M 700M 1GFrequency [Hz]

LIM EN 55013_field Voltage QPLimit

SP-Cap CD series 6V47uF x 3pcsAfter

BMT Environment



20

BMT Environment• Hardware

– Note PC( For Model Verification correction ）• CPU: IBM ThinkPADT42p Mobile Pentium 2.0GHz• Memory: 2GB• GPU: ATI FIREGL T2 128MB Memory• Disk: 60GB

– Desk Top PC（For Analysis execution ）• CPU: Dell Precidion PWS380 PentiumD 3.2GHz• Memory 3.2GB• GPU: NVIDIA QuadroFX540 128MB Memory

• Disk: 200 GB

• OS – Windows XP Service Pack2

– Windows XP x64 Edition

• Software – Ansoft links for Zuken / AnsoftLinks for Allegro – SIwaveV3.1.1

Power Integrity Analysis



21

Power Integrity Analysis

• Power analysis is similar to Signal analysis

but models are traditionally much moredifficult to obtain

• PDS is coupled to Signal nets• Results can be interpreted through SIwave

or a model exported for SSO, SSN

analysis

PI Analysis Types



22

PI Analysis Types

• Plane impedance – Verify low impedance up to device cut-off frequency

• Decoupling solutions – Verify capacitor placement and effectiveness

• Resonance modes

– Verify signal return path and power delivery

• Frequency sweep – Verify maximum IR drop across frequencies

• Isolation – Verify analog power supplies do not affect digital

Target Impedance of PDS



23

Target Impedance of PDSHigh-Speed

Digital Device

Power

Delivery SystemV

I

V Z =

I

1. The Impedance looks into PDS at the device should be kept low over a broadfrequency range (from DC to package cut-off frequency)!

2. The Desired Frequency Range and Impedance Value is called TargetImpedance.

3. Target impedance goal is set with the help of allowable ripple on thepower/ground plane over a specified frequency range.

f

|Z|

Mag. of Z

target Z

Target Impedance Calculation



24

Target Impedance Calculation

( ) ( )Current

Ripple Allowed Voltage Supply Power Z

_ _ _ ×=Target

3.3vVRM

4A 2A

3.3v plane

( ) ( )Ω=

×= m

A

v Z 5.82

2

%53.3v) Target(3.3

Example:

Target Impendence is the goal that designer should hit !!!

Components of Z



25

Components of Z

• Impedance consists of – Capacitive factor, decreases with frequency

– Inductive factor, increases with frequency

– Inductance includes plane inductance, ESL of decouplingcapacitors, traces and vias which connect planes tocapacitors

C f π 2

1

L f π 2

f

|Z|

Mag. of Z

target Z

Inductivearea

Inductivearea

Capacitivearea

Capacitivearea

BulkCapacitance

BulkCapacitance

Decoupling Capacitors



26

Decoupling Capacitors

Lower the impedance of the power deliverysystem and prevent energy transference fromone circuit to another

Supply current bursts for fast switching circuit

Provide AC connection between power andground planes for signal return current

Control EMI

Capacitor Considerations



27

Capac to Co s de at o s

• Values are important

– Different values affect different frequencies• Real Capacitors are non-ideal

– Need to include frequency dependent ESR,

ESL

• Location is important

– Spreading inductance limits area ofeffectiveness

IC Evaluation Board （Source Ground Resonance Analysis）



28

y

Noise of IC output

ＣＯＮＤ _1 ＣＯＮＤ _2 ＣＯＮＤ _3 ＣＯＮＤ _4 ＣＯＮＤ _5

Check Layer Structure before resonant analysis.GND,SVSS,AVSSPower Plane Layer is COND_7Multi Layer makes low Frequency Resonant

ＣＯＮＤ _8ＯＮＤ _6 ＣＯＮＤ _7

IC Evaluation Board: Source Resonance Analysis System



29

IC Evaluation Board: Source Resonance Analysis System

BoardS parameter

S Parameter

Equivalent Model

Board Resonance Analysis

IC

Power supply Plane(L7)2.9V

Filter

PORT1

PORT2

PORT3

PORT4 PORT5PORT6

PORT7

PORT8

PORT9

PORT10 PORT11 PORT12 PORT13

PORT15

PORT14

Power supply Plane(L7)

5V

Setting Analysis Ports

Filter Filter Filter Filter

Filter

IC SPICE Simulator

Virtual noise analysis system



30

Virtual noise analysis systemBefore Noise Measure

Board

S parameter

S Parameter

Equivalent Model

Board

S Paramter

S Parameter

Equivalent Model


AfterBefore

Impedance controlwith capacitor orpower supply plane

modification

After Noise Measure

Virtual analysis systemWith substrate data andDevice Library

Virtual analysis systemWith substrate data andDevice Library


SP-CapMLCC

IC SPICE Simulator IC SPIC Simulator

Noise reduction92MHz138MHz

184MHz

92MHz138MHz

184MHz

NoiseNoise

Resonant Analysis: Eigen value Analysis



31

y g y

• Form of a substrate -> it resonates as an parallelmonotonous antenna The Rule Of Sum

Board Size is 150mmx140mm

Calculate….

• m=1:n=0

– 477MHz

• m=0:n=1

– 511MHz

• m=1:n=1

– 699MHz

:• Noise is aspired lower frequency

22

0

2⎟ ⎠

⎞⎜⎝

⎛ +⎟

⎠

⎞⎜⎝

⎛

ε=

b

n

a

mc f

r

c

ba

nm

C

f

r

c

,

,

0

ε

: resonance frequency [Hz]: velocity of light 3.0x108[m/s]

:dielectric constant: constant 0, 1, 2, and ...

:substrate size [m]

Resonance frequency

2 Layers Resonant Analysis



32

y ySource Corner

V1G2

• 2 layer Resonant Analysis

– Eigen Mode Analysis – Voltage Probe

100mm

200mm

Voltage Probe

V1_G2RightX:190mmY: 50 mm

Voltage ProbeV1_G2UnderX:100mmY: 10 mm

Voltage ProbeV1_G2Upper

X:100mmY: 90 mm

Resonant Analysis: Eigen value Analysis



33

• Form of a substrate -> it resonates as an parallelmonotonous antenna

The Rule Of Sum

Board Size is 200mmx100mm

Calculate….

• m=1:n=0

– 358MHz

• m=0:n=1

– 715MHz

• m=1:n=1

– 800MHz

:• Although approximation is

possible, loss and boardthickness are not taken into

consideration.

22

0

2⎟ ⎠

⎞⎜⎝

⎛ +⎟

⎠

⎞⎜⎝

⎛

ε=

b

n

a

mc f

r

c

ba

nm

C f

r

c

,

,

0

ε

: resonance frequency [Hz]: velocity of light 3.0x108[m/s]

:dielectric constant: constant 0, 1, 2, and ...:substrate size [m]

Resonance frequency




34

y ySource Corner

• Non Voltage Source

Multi Layers Resonant Analysis



35

y y

G1

G2V3G4V5G6

100mm

200mm

• Resonant Analysis

– 6 Plane layers

Multi Layers Resonant Analysis



36

• 1st Resonant is Lower Frequency – 105.4 MHz

105.4MHz < 358Mhz! Different!

Resonant is differentby the numbers of

Power/GND layers.

SIwave Concept of Source/Ground Bounce



37

V

S

Complex Interference

SIwave S-parameters include allthe complex interference of theSource/Ground and signal lines.

Thus the any excitation betweenthe source/round is observable at

probe any points.

Virtual True Ground

V

SIwave Generated S-parameter

IC

Vref

SIwave Concept of Source/Ground Bounce



38

The area of simultaneous ON

N-MOS

P-MOS

VDD

GND

When the Timing is Changing ON with P-MOS and N-MOS,

It make simultaneous ON situation.Thus we need to consider the both of input Low and Highimpedance in EMI analysis.

Voltage Source Resistance



39

V1G2

• 2 layer Resonant Analysis – Eigen Mode Analysis

– Voltage Source

• 1V/50 Ohm vs 1V/0.05Ohm

50 Ohm vs 0.05Ohm

100mm

200mm

Voltage ProbeV1_G2Right

X:190mmY: 50 mm

Voltage ProbeV1_G2UnderX:100mmY: 10 mm

Voltage ProbeV1_G2UpperX:100mmY: 90 mm




40

V1G2

Source Corner• 2 layer Resonant Analysis

– Calculate S-,Z- Parameter

100mm

200mm




41

Source Corner

• S para and Z Plot

Far Field plot by Voltage SourceR i 50Oh 0 05Oh



42

Resistance 50Ohm vs 0.05Ohm• Voltage Source Resistance

50 Ohm0.05 Ohm

Frequency Sweep



43

• Voltage Source:1V/50 Ohm

IC602IC Power supply I/F



44

IC

+ + +

+ + + + +

+

REGPowerPlane(L7)

5V

PowerPlane(L7)

2.9V

PORT1

PORT2 PORT3 PORT4 PORT5 PORT6

PORT7

PORT8

PORT9

PORT10PORT11

PORT12 PORT13

PORT15

PORT14

※部品配置はL1（表層）、L8

Picture scanning line synchronizedSignal1 SIgnal2 I/F



45

Signal1,SIgnal2 I/F

Signal1

IC

Signal1

Signal2

Signal2

Connector

Signal1

Signal2

Signal2

PORT1

PORT3

PORT6

PORT9

PORT10

PORT11

PORT12

BufferIC

Signal1

PORT2PORT4

PORT5PORT7

PORT8

Signal1

Signal2

Proposed Noise Reduction Method



46

IC PIN LayoutIC PORT Setting (Power supply PIN)

PORT7

PORT8PORT9

PORT11

PORT12

PORT15

PORT10

PORT13

Signal2Signal2

Signal1

Signal1

Analyzed S parameter

IC Evaluation Board: Source Resonance Analysis

V lt S 0 05 5 50 Oh



47

Voltage Source:0.05,5,50 Ohm1V

10MHz~200MHzLinearly 50 pointsL7-L8 LayersTime:19min 40 sec

Frequency Sweep

• Voltage Source:50 Ohm

92MHz

138MHz

184MHz

Signal1

Impedance Analysis10MH 200MH t Si lP t1 1



48

10MHz~200MHz at SignalPort1-1

92MHz 138MHz 184MHz

IC Evaluation Board: Source Resonance Analysis



49

Frequency Sweep

92MHz

138MHz

184MHz

• Voltage Source:0.05 Ohm

Signal1

Calculate the Min Capacitance



50

MHzf

..V

AI

Fe.Vf

IC MHz@mim

1

05033

2

0692912

1

=

×=∆

=∆

−=∆π

∆=

CAPARRAY_1 C (F) L (H) R (Ohm)

C1-C22 (22ea) 1.00E-07 2.00E-09 0.2

1.9uF

Contribute 2.2uF

Choose Effective Capacitors



51

10 nF1.2 nF

.15nF

1.5pF

Choosecapacitor withdesired SRF

from SIwave’svendor Library

Capacitor plotsare actual vendormeasurements

which includeESR and ESLeffects

Effect of ESL



52

Capacitor1 Capacitor2 Capacitor3

C 1nF 1nF 1nF

ESR 100mOhm 100mOhm 100mOhm

ESL 0.1nH 0.5nH 1nH

Decreased ESLshifts SRF higher

in frequency

Effect of ESR



53

Capacitor1 Capacitor2 Capacitor3

C 1nF 1nF 1nF

ESR 10mOhm 100mOhm 200mOhm

ESL 1nH 1nH 1nH

Decreased ESRshifts SRF lower

in magnitude

Decoupling Strategy



54

Bare PCB

With Capacitors

Z 1 1

Verify theeffectiveness ofyour selection

and placementthrough Z plots

Resonance Simulation



55

• Scans entire PCB/PKG on all layers• Eigen mode analysis identifies location and

frequency of natural cavity resonances that

exist between planes

• If a resonance is excited, Signal Integrity

can be compromised: High Z, null in S21,EMI etc.

• Resonances should be moved away from

critical parts and outside operatingfrequency

Reducing Resonance



56

Resonances always exist butyou can reduce their impact by:

• Changing the decoupling scheme

• Changing the stackup

• Changing plane dimensions

• Adding via stitching

• Moving discrete parts

Evaluate of Capacitor Placement



57




58




59

Evaluating CapacitorPlacement



60

Placement• Impedance Plot :No Capacitor




61

Placement




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Placement




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Placement




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Placement




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Placement




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Placement




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Placement




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C23A

C24C25

C28

C27

C26

Placement

Source Ground Resonance Noise Measure(MLCC 6 Components)



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C27ECJ1VC1H221J

(220pF)

C28ECJ1VC1H471J(470pF)

C9(3300pF)

C24(1000pF)

C25(1500pF)

C26(2200pF)

Power Plane (2.9V)

Capacitor Performance



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MLCC

Simulation modelestimating low ESL

Before: without Capacitors After with 6 Capacitors

Source Ground Resonancewith different Capacitors



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Before without Capacitors After with 6 Capacitors

Impedances

MLCC（6 Components ）

Far Field

Impedance Plot of different CapacitorZ Plot (<1GHz)

Original



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Original

Simulation model（PED)

Good!!


1 Components

Far Field Emission Plot for different Cap Parts

Original



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Simulation model(PED)

Good!!1 Components


Original

Comparison of surface voltage distributionwhen frequency is swept



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1 ComponentsGood!!

Simulation model(PED)


Conclusion



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• Panasonic has adapted Ansoft SIwavesolution to nail down the expected problembefore the actual board production.

• This seminar is showing the typical steps toreduce the unnecessary noise caused bySource and Ground bounce.

• By the use of Ansoft SIwave, Panasonic isnot just making robust board, but also toimprove their components to be best suited

for the noise reduction and emission fromthe board,

Suppressing Power and Ground Noise

Documents

Transcript of Suppressing Power and Ground Noise