Summary Presentation: Sensors, Devices,...
Transcript of Summary Presentation: Sensors, Devices,...
Summary Presentation: Sensors, Devices, Components
Reza Langari, Rusty Harris, Christi Madsen, Robert Nevels, Alexander Parlos, Weiping Shi
April 17, 2013
About us
H. Rusty HarrisAssistant Professor of Electrical & Computer Engineering
Christi MadsenProfessor of Electrical & Computer Engineering
Robert NevelsProfessor of Electrical & Computer Engineering
Alexander ParlosProfessor of Mechanical Engineering
Weiping ShiProfessor of Electrical & Computer Engineering
Reza LangariProfessor of Mechanical Engineering
Hybrid Vehicles
HEV Energy ManagementReza Langari
Driving InformationExtraction
SOC Compensator(SC)
SOC Compensation
Driving DataRepository
Driving InformationExtractor
(DIE)
Tec,SOC
Tec,FTD
Driving SituationIdentification
Driving StyleIdentifier
(DSI)
Roadway TypeIdentifier
(RTI)Fuzzy Torque
Distributor(FTD)
Torque Distribution
Roadway Type &Level of Congestion
Driver Style
Tec,TD
Tec,TD
Tec
Driving environment(Real-time Data Update)
Vehicle state
Te
iuT
ltT
stT
0ltT
Initial setting ofRoadway type and Driver style
(No activation of RTI,DSI)
3
Hybrid Vehicles
Power Generation
Wind Energy
Oil and Gas Production EMCS Systems
Sensor Fault DiagnosisReza Langari
4
Issues of Concern:
Tools & Techniques:
Functional Performance
Auto-Associative Neural Networks
Mixture of ProbabilisticPCA
Phase SpaceReconstruction
Sensor Fault Diagnosis
Nanoscale Research in EnergyRusty Harris
GaN/Diamond for Power Management Devices
Diamond
Solar Antenna and THz signal management
GaN epitaxy for Energy and Device research
kV Device Designs for power grid applicationsPhonon
Cooper Pairs
Quasiparticle Diffusion and trapping by W
Al
Ge
W
Dissociated Cooper Pairs(quasiparticles)
Ge
Al bias lines (pos and neg biasing)
100’s of us
10’s of us
Electron/hole pairs
Scal
ed y
ield
(Ioni
zatio
n ra
te) /
(Rec
oil
Ener
gy)
Recoil Energy
Materials and Devices for Dark Matter Research
Sponsors
Dielectrics for advanced storage devices
GaN/AlGaN
Diamond
High and Medium Voltage GaN Device Research -Rusty Harris
• DC Distribution is localized to high-and low-level voltage regimes (red)
– Small exception: transportation
• Need lower loss Medium Voltage device switching
http://smartgridsherpa.com/blog/building-a-dc-electric-power-grid-%E2%80%93-fact-or-fiction
High-freq PWM, bidirectional-blocking GaN converter
GaNH-bridge
High-freqac link
x-formerD
S
GaN Bi-directional converter
ripple port: 120 Hz energy
storage
Film Cap voltage
High-freqInput filter
ac port: 60Hz AC
n series connected output bridge
output filter
dc port
AlGaN
Metal Gate
InGaN (10%)
Gate Dielectrics DS
i-AlN on Si(111)Spacer Dielectric
D
S
D
S
D
S
• GaN device research focused on non-flyback symmetric power switches with CMOS compatibility
– low Ron, Higher freq., high T
High Voltage Limitations –Rusty Harris
• Problem: GaN promises better Vbr-Roncharacteristics, but literature doesn’t deliver
• Lower Eg compared to SiC, but…• Low Ron due to 2D Electron Gas and
higher mobility
• Extensive device and materials research shows that limitation is due to inherent device design
SOURCE DRAIN
Ta/Al/Ta
2 µm GaN
LGD = 15 μmLG = 5 μm LGS = 9 μm
HR (111) Si
Ni
Al0.24Ga0.76NALD HfO2
PECVD SiNPECVD SiO2Recess
GaN Device Research Focus to improve Vbr-Ron – R. Harris
Contrast Layer
GaN
GaON
HfO2
(b)(a)
1122 1120 1118 1116 1114 1112
Ga-ONGaN
Ga2O3
ALD HfO2 / GaN
HCl Cleaned GaN
Ga 2p
Norm
alize
d In
tens
ity (a
.u.)
Binding Energy (eV)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
-7 -6 -5 -4 -3 -2 -1 0 1 2
I Dm
ax(A
/mm
)
Threshold Voltage (V)
Au-Free AlGaN/GaN Technologies
MIT2011
IMECMay 2012
IMECJune 2012
ON Semi.June 2012
Texas A&M / SEMATECHAug. 2012
Texas A&M / SEMATECHOct. 2012
Nat. Univ. of SingaporeApr. 2012
Nanyang Tech. Univ.Nov. 2012
Better device designs with improved electrostatics
Integration improvements with Diamond and high Vbr materials
Elegant dielectric and interface improvements to reduce device loss
Integration in Si CMOS of GaN devices with record enhancement mode operation/drive
current capability
Diamond Thermal layer with GaNheterostructures
Planar Solar Concentrators Madsen
• Why Planar Concentrators?– High light intensity is required either for higher temperature (solar-thermal) or
higher efficiency/lower cost (photovoltaics);– Secondary concentration alleviates connection, cooling and uniformity issues;– Waveguides are cheap, robust and can be easily fabricated.
• Planar Waveguide Concentrator:– Integrated mirror-waveguide array serves as a near-ideal secondary 2D
concentrator– Efficient, homogenous output, 3D-2D hybrid concentration– Tolerates large incident angles for relaxed tracking tolerance
hD
h≥0.3D
h≤1cm
Not to scale, Slab concentrator
h
Polymer Waveguide
Lens Arrays
Photovoltaic cells
Planar Solar Concentrator Demonstration - Madsen
• Proof-of-concept Demonstration– Polymer-on-glass waveguides– Turning mirror for lens-to-waveguide coupling– Goal: high optical concentration and efficiency
• Status:– Fabricated polymer waveguides on silica– Fabricated 45-degree turning mirrors – Coupled white light into waveguides using a lens to focus light
on one or more of the turning mirrors.
Turning mirror using total internal reflection
Multi-waveguide illumination
http://www.engadget.com/2011/05/17/mizzou-professor-says-nantenna-solar-sheet-soaks-up-90-percent-o/
Need a broadband method of collecting and harvesting solar energy
However…
Current Solar Nantennaresearch has no clear path toward harnessing the energy from absorbed solar radiation.
In fact, no clear proof of concept has really been proposed.
500 1000 1500 2000 25000.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Irra
dian
ce (W/(m
-2 n
m-1))
Wavelength (nm)
AM 1.5 Global Tilt
21% efficient solar cell
Systematic Solar Antenna Bob Nevels and Rusty Harris
Research Approach
• Integrate simple physical systems that demonstrate optical absorption in a “classical” sense– Or disprove the possibility so that research can be better focused in the
future
• Initial pathways to testing antenna operability with respect to solar coherence and polarization
Nanoscale nantenna with wide range polarization angle acceptance, designed for visible light absorption
Substrate is dielectric matched (Sapphire, Oxide, semi-insulating semiconductor, etc.)
Impedance matched lossydielectric with known emissivity-temperature dependence
Experimental approach
(3)Incident single wavelength, uniformly polarized light (400-800 nm)(dark environment)
(5)Resistive dielectric at antenna nexus will dissipate energy absorbed on the antenna in the form of head
(4)Electric field (THz level) established in antenna at antenna nexus
(6)Known emissivity and thermal imaging with respect to that of a reference sample with no antenna will give valuable information about impedance matching, absorption efficiency, and spectral influences
(1)Design and simulation of realistic antenna structures with materials integration of actual circuit elements at nanoscale
(2) Integration using e-beam lithography and other novel process techniques
Ê
120nm Cr nantennas
Isolation Plane
50nm Patch antenna
In situ etched region
Preliminary results
15 nm
5 nm
30 nm Glass
ITO10 nm
Incident Wave
10 nm10 nm
Simulations:Dielectric confinement of optical antennas results in field enhancement and more controllable spectral response.
Experimental:Large arrays of nano-scale broadband optical antennas have been developed with e-beam lithography and integrated into metal/dielectric systems
Experimental:An in situ technique is demonstrated that allows optical antenna isolation and in vacuointegration with dielectrics and metals
On-going Research
1. R. Nevels, G. R. Welch, P. S. Cremer, P. Hemmer, T. Phillips, S. Scully, A.V. Sokolov, A.A. Svidzinsky, H. Xia and M.O. Scully, “Visualizing and Detection of Single Molecules,” Molecular Physics, Vol.110, Issue 15-16,pp 1993-2000, Aug. 2012.2. Eyob A. Sete, Anatoly A. Svidzinsky, Hichem Eleuch, Robert D. Nevels, and Marlan O. Scully, “Correlated spontaneous emission on the Danube,” Journal of Modern Optics, Volume 57 Issue 14, 1311, 2010.3.Vipin Cholleti and Robert Nevels, “Nano-Antennas: Theory and Design,” Princeton-TAMU Quantum Optics Conference, Jackson Hole, Wyoming, 2009.4. R.D Nevels and Ic-Pyo Hong, “A Coaxial Line Fed Dipole Antenna Coated with a DNG Material,” IEEE-APS/URSI International Symposium Digest, 2008.
Robert Nevels, IEEE FellowProfessional Interests:Mathematical and Numerical Techniques in Electrodynamics, Electromagnetic Scattering, Microwave and Nano Antennas, Plasmonics.
E
Array structures for single molecule detection – Ref 1., 2. below.
E
Novel high Q and wide bandwidth plasmonic nano-antennas for microcircuit applications – Ref 3. below.
H. Rusty HarrisInterest Areas: Tunnel Transistors, GaN RF Transistors, Si Transport and Ballisticity, Nano-scale Lasers and Optical Amplifiers
[1] Z. Lu, J. G. Fossum, J.-W. Yang, H. R. Harris, V. P. Trivedi, M. Chu, and S. E. Thompson, “A Simplified, Superior Floating-Body/Gate DRAM Cell,” IEEE Electron Device Lett., vol. 30, pp. 282-284, March 2009.[2] Huang, J.; Kirsch, P.D.; Jungwoo Oh; Se Hoon Lee; Majhi, P.; Harris, H.R.; Gilmer, D.C.; Bersuker, G.; Dawei Heh; Chang SeoPark; Park, C.; Hsing-Huang Tseng; Jammy, R., "Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- k/Metal Gate Stacks Directly on SiGe," Electron Device Letters, IEEE , vol.30, no.3, pp.285-287, March 2009.[3] Chadwin D. Young, Ji-Woon Yang, Kenneth Matthews, Sagar Suthram, Muhammad Mustafa Hussain, Gennadi Bersuker, Casey Smith, Rusty Harris, Rino Choi, Byoung Hun Lee, and Hsing-Huang Tseng, J. “Hot carrier degradation in HfSiON/TiN fin shaped field effect transistor with different substrate orientations” Vac. Sci. Technol. B 27, 468 (2009).[4] Yang, J.-W.; Harris, H.R.; Bersuker, G.; Kang, C.Y.; Oh, J.; Lee, B.H.; Tseng, H.-H.; Jammy, R., "New Hot-Carrier Injection Mechanism at Source Side in Nanoscale Floating-Body MOSFETs," Electron Device Letters, IEEE, vol.30, no.1, pp.54-56, Jan. (2009).
• Expertise– Non-intrusive methods for remote asset monitoring;– Real-time assessment of mechanical/electrical failure risk & reliability;– Machine learning & statistical signal processing;– Intelligent control for machine life extension
Assessing mechanicalhealth & reliability
in real-timeUse of non-intrusivemonitoring methods
• Applications
Energy efficiencyin electro-mechanical systems Estimating energy conversion efficiency using non-intrusive
monitoring methods
Data-driven methods for machine useful life
predictionMachine learning and
Statistical signal processing
• Reduction in unplanneddowntime
• Reduction in MRO costs• Improved energy efficiency
• Flagging inefficient systems• Indicators to improve energy
efficiency• Accuracy within 1-2% of IEEE
122B standard
• Timing of planned outages• Elimination of unplanned
outages• Improved asset outage
management
Remote asset monitoringAlexander G. Parlos
Alexander G. Parlos• Origins of the non-intrusive monitoring concept
– Mid 1980s – consumption estimates or residential appliances from limited measurements at central switches
– Monitoring (sub-metering) and consumption disaggregation– Last 5 years resurgence of interest for “smart buildings” and “smart
homes”– Feedback into “smart grid” for potential energy savings
Alexander G. Parlos• Non-intrusive monitoring for industrial assets
– Consumption estimates for residential appliances & disaggregation not enough!
– Assessing asset risk & reliability is critical– Variable loading applications require estimates of energy efficiency, not
simply consumption measurements– Feedback into “smart grid” for outage planning & potential energy
savings
From “Sensing currents for maximum efficiency”, Energy Efficiency & Technology, Oct 1, 2012http://eetweb.com/Sensing-currents-maximum-efficiency/
–sub-metering often helps detect abnormal behaviors faster than traditional sensors such as temperature, pressure, vibration. Analysis of how these electrical parameters change over time even helps anticipate failures and plan predictive maintenance …
Alexander G. Parlos• Non-intrusive monitoring for industrial assets
– Mechanical & electrical condition assessment with no mechanical sensing
Signal Waveforms
Simple Retrofit Embedded Device
Voltages Currents
ElectricPowerSupply
CTs & PTs
Sensitivity of1 in 1,000,000
Assessment of • Risk of driver mechanical &
electrical failure• Risk of driven load failure• Energy consumption• Energy efficiency
Alexander G. Parlos• Non-intrusive monitoring for industrial assets
– Energy conversion efficiency estimation– Formulation of energy efficiency as adaptive state estimation– Tested against IEEE 112B standard– Test errors within 1% - 2% of IEEE 112B, for loads in 20% to 150% rated
Rated values
• Insulated Gate Bipolar Transistor – Three terminal power semiconductor device– Used as a fast electronic switch– Large IGBT modules can handle high voltages
and large currents• Advantages
– High input impedance MOS-gate control– Low forward-voltage drop
• Market grows fast– 20% per year
Design & Simulation of IGBWeiping Shi
IGBT Applications
• Electric trains, cars and ships
• Renewable energy switches
• Grid power T&D• Home appliances