STGB15H60DF, STGF15H60DF, STGP15H60DF CE(sat) · 1 Electrical ratings Table 1. Absolute maximum...
Transcript of STGB15H60DF, STGF15H60DF, STGP15H60DF CE(sat) · 1 Electrical ratings Table 1. Absolute maximum...
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1 23
TO-220
TAB
12
3
TO-220FP
13
TAB
D PAK2
C(2, TAB)
E(3)NG1E3C2T
G(1)
Features• High speed switching• Tight parameters distribution• Safe paralleling• Low thermal resistance• Short-circuit rated• Ultrafast soft recovery antiparallel diode
Applications• Motor control• UPS, PFC
DescriptionThese devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents anoptimum compromise between conduction and switching losses to maximize theefficiency of high switching frequency converters. Furthermore, a slightly positiveVCE(sat) temperature coefficient and very tight parameter distribution result in saferparalleling operation.
Product status link
STGB15H60DF
STGF15H60DF
STGP15H60DF
Trench gate field-stop IGBT, H series 600 V, 14 A high speed
STGB15H60DF, STGF15H60DF, STGP15H60DF
Datasheet
DS9881 - Rev 3 - April 2019For further information contact your local STMicroelectronics sales office.
www.st.com
https://www.st.com/en/product/STGB15H60DFhttps://www.st.com/en/product/STGF15H60DFhttps://www.st.com/en/product/STGP15H60DFhttp://www.st.com
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1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol ParameterValue
UnitD2PAK, TO-220 TO-220FP
VCES Collector-emitter voltage (VGE = 0 V) 600 V
ICContinuous collector current at TC = 25 °C 30 30 (1)
AContinuous collector current at TC = 100 °C 15 15 (1)
ICP (2) Pulsed collector current 60 60 A
VGE Gate-emitter voltage ±20 V
IFContinuous forward current TC = 25 °C 30 30 (1)
AContinuous forward current at TC = 100 °C 15 15 (1)
IFP (2) Pulsed forward current 60 60 A
VISO
Insulation withstand voltage (RMS) from all three leads toexternal heat sink
(t = 1 s; Tc = 25 °C)2500 V
PTOT Total power dissipation at TC = 25 °C 115 30 W
TSTG Storage temperature range -55 to 150°C
TJ Operating junction temperature range -55 to 175
1. Limited by maximum junction temperature.2. Pulse width limited by maximum junction temperature.
Table 2. Thermal data
Symbol ParameterValue
UnitD2PAK, TO-220 TO-220FP
RthJC Thermal resistance junction-case IGBT 1.3 5 °C/W
RthJC Thermal resistance junction-case diode 2.78 6.25 °C/W
RthJA Thermal resistance junction-ambient 62.5 62.5 °C/W
STGB15H60DF, STGF15H60DF, STGP15H60DFElectrical ratings
DS9881 - Rev 3 page 2/24
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2 Electrical characteristics
TC = 25 °C unless otherwise specified.
Table 3. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)CESCollector-emitter breakdownvoltage VGE = 0 V, IC = 2 mA 600 V
VCE(sat)Collector-emitter saturationvoltage
VGE = 15 V, IC= 15 A 1.6 2.0
V
VGE = 15 V, IC = 15 A
TJ = 125 °C1.7
VGE = 15 V, IC = 15 A
TJ = 175 °C1.8
VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5.0 6.0 7.0 V
ICES Collector cut-off currentVCE = 600 V
VGE = 0 V25 μA
IGES Gate-emitter leakage currentVGE = ±20 V
VCE = 0 V±250 nA
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Cies Input capacitanceVCE = 25 V, f = 1 MHz,
VGE = 0 V-
1952
- pFCoes Output capacitance 78
Cres Reverse transfer capacitance 45
Qg Total gate charge VCC = 480 V, IC = 15 A,
VGE = 0 to 15 V (see Figure 33. Gatecharge test circuit)
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81
- nCQge Gate-emitter charge 8
Qgc Gate-collector charge 42
Table 5. Switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time VCE = 400 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V (seeFigure 32. Test circuit for inductive loadswitching and Figure 34. Switchingwaveform)
24.5
-
nstr Current rise time 8.2
(di/dt)on Turn-on current slope 1470 A/μs
td(on) Turn-on delay time VCE = 400 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V
TJ = 175 °C (see Figure 32. Test circuitfor inductive load switching andFigure 34. Switching waveform)
25ns
tr Current rise time 9
(di/dt)on Turn-on current slope 1370 A/μs
STGB15H60DF, STGF15H60DF, STGP15H60DFElectrical characteristics
DS9881 - Rev 3 page 3/24
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Symbol Parameter Test conditions Min. Typ. Max. Unit
tr(Voff) Off voltage rise time VCE = 400 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V (seeFigure 32. Test circuit for inductive loadswitching and Figure 34. Switchingwaveform)
18
- ns
td(off) Turn-off delay time 118
tf Current fall time 69
tr(Voff) Off voltage rise time VCE = 400 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V
TJ = 175 °C (see Figure 32. Test circuitfor inductive load switching andFigure 34. Switching waveform)
27
td(off) Turn-off delay time 124
tf Current fall time 101
tsc Short-circuit withstand timeVCC ≤ 360 V, VGE = 15 V,
RG = 10 Ω3 5 - μs
Table 6. Switching energy (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
Eon (1) Turn-on switching energy VCE = 400 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V(see Figure 32. Test circuit for inductiveload switching)
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136
- μJ
Eoff (2) Turn-off switching energy 207
Ets Total switching energy 343
Eon(1) Turn-on switching energy VCE = 400 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V
TJ = 175 °C(see Figure 32. Test circuit for inductiveload switching)
224
Eoff (2) Turn-off switching energy 329
Ets Total switching energy 553
1. Including the reverse recovery of the diode.2. Including the tail of the collector current.
Table 7. Collector-emitter diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
VF Forward on-voltageIF = 15 A
-1.8 2.2
VIF = 15 A, TJ = 175 °C 1.3
trr Reverse recovery time Vr = 60 V; IF = 15 A;
diF/dt = 100 A / μs(see Figure 35. Diode reverse recoverywaveform)
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103 ns
Qrr Reverse recovery charge 128 nC
Irrm Reverse recovery current 2.5 A
trr Reverse recovery time Vr = 60 V; IF = 15 A;
diF/dt = 100 A / μs
TJ = 175 °C(see Figure 35. Diode reverse recoverywaveform)
182 ns
Qrr Reverse recovery charge 437 nC
Irrm Reverse recovery current 4.8 A
STGB15H60DF, STGF15H60DF, STGP15H60DFElectrical characteristics
DS9881 - Rev 3 page 4/24
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2.1 Electrical characteristics (curves)
Figure 1. Power dissipation vs case temperature forD2PAK and TO-220
Ptot
60
40
20
00 25 TC(°C)
(W)
100
80
50 75
100
175125 150
120
GIPD041020131126FSR
Figure 2. Collector current vs case temperature for D2PAKand TO-220
IC
10
5
00 25 TC(°C)
(A)
100
15
50 75
20
25
175
VGE ≥ 15V, TJ ≤ 175 °C
125 150
30
GIPD011020131132FSR
Figure 3. Power dissipation vs case temperature forTO-220FP
Ptot
10
00 TC(°C)
(W)
100
20
50 150
30
GIPD151020131527SA
Figure 4. Collector current vs case temperature forTO-220FP
IC
8
4
00 TC(°C)
(A)
100
12
50
16
VGE ≥ 15V, TJ ≤ 175 °C
150
GIPD151020131600SA
Figure 5. Output characteristics (TJ = 25°C)
IC
15
10
5
00 1 VCE(V)
(A)
4
20
2 3
25
VGE=15V
30
359V
11V40
7V
GIPD041020131136FSR
Figure 6. Output characteristics (TJ = 175°C)
IC
15
10
5
00 1 VCE (V)
(A)
4
20
2 3
25
VGE=15 V
30
359V
11V40
7V
GIPD041020131142FSR
STGB15H60DF, STGF15H60DF, STGP15H60DFElectrical characteristics (curves)
DS9881 - Rev 3 page 5/24
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Figure 7. VCE(sat) vs junction temperature
VCE(sat)
1.8
1.6
1.4
1.2-50 TJ(°C)
(V)
100
2.0
0 50
2.2
150
2.4VGE= 15V
IC= 30A
IC= 15A
IC= 10A
GIPD041020131148FSR
Figure 8. VCE(sat) vs collector current
VCE(sat)
1.6
1.4
1.20 IC(A)
(V)
15
1.8
5 10
2.0
20
2.2
2.4 VGE= 15V
TJ= -40°C
TJ= 25°C
TJ= 175°C
25 30
GIPD041020131152FSR
Figure 9. Collector current vs switching frequency forD2PAK and TO-220
0
10
20
30
40
1 10
Ic [A]
f [kHz]
Rectangular current shape, (duty cycle = 0.5, VCC = 400 V, RG = 4,7 ΩVGE = 0/15 V, TJ = 175 °C
Tc=80°C
Tc=100 °C
GIPD161020130955SA
Figure 10. Collector current vs switching frequency forTO-220FP
0
5
10
15
20
1 10
Ic [A]
f [kHz]
rectangular current shape,(duty cycle=0.5, VCC = 400V, RG=4.7Ω,VGE = 0/15 V, TJ =175°C)
Tc=80°C
Tc=100 °C
GIPD161020130958SA
Figure 11. Forward bias safe operating area for D2PAKand TO-220
°
IC
10
1
0.11 VCE(V)
(A)
10
10 µs
100 µs
1 msSingle pulseTc= 25°C, TJ
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Figure 13. Transfer characteristics
IC
15
10
5
06 7 VGE(V)
(A)
10
20
8 9
25 TJ=175°C
30
35
-40°C
1125°C
VCE=5V40
GIPD041020131357FSR
Figure 14. Diode VF vs forward current
VF
2.1
1.7
1.3
0.95 IF(A)
(V)2.5
9
TJ= 175°C
13 17 21 25
TJ= 25°C
TJ= -40°C
GIPD041020131406FSR
Figure 15. Normalized VGE(th) vs junction temperature
VGE(th)
1.1
1.0
0.6-50 TJ(°C)
(norm)
0 50 100 150
IC= 1 mAVCE= VGE
0.7
0.8
0.9
GIPD041020131457FSR
Figure 16. Normalized V(BR)CES vs junction temperature
V(BR)CES
1.1
1.0
0.9-50 TJ(°C)
(norm)
0 50 100 150
IC= 2mA
GIPD041020131502FSR
Figure 17. Capacitance variation
C
10VCE(V)
(pF)
0.1 1 10
Ciss
100
1000
10000
CoesCres
GIPD041020131506FSR
Figure 18. Gate charge vs gate-emitter voltage
VGE
8
0Qg(nC)
(V)
0 20
IC= 15AIGE= 1mAVCC= 480V
4
40
12
60 80
16
GIPD041020131514FSR
STGB15H60DF, STGF15H60DF, STGP15H60DFElectrical characteristics (curves)
DS9881 - Rev 3 page 7/24
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Figure 19. Switching evergy vs collector current
E
0IC(A)
(µJ)
0 5 10
50100150
15 20
200250
EON300350400450
VCC = 400V, VGE = 15V, RG = 10Ω, TJ = 175°C
25 30
500550600
EOFF
GIPD041020131521FSR
Figure 20. Switching energy vs gate resistance
E
100RG(Ω)
(µJ)
2 12 22
150
200
250
32 42
300
350 EOFF
VCC = 400 V, VGE = 15 V, IC = 15 A, TJ = 175 °C
400
450
EON
GIPD041020131529FSR
Figure 21. Switching energy vs temperature
E
10TJ(°C)
(µJ)
-50 0 50
110
210
310
100 150
EOFF
VCC= 400V, VGE= 15V, RG= 10Ω, IC= 15A
EON
GIPD041020131535FSR
Figure 22. Switching energy vs collector-emitter voltage
E
20VCE(V)
(µJ)
150 250 350
70
120
170
450
EOFF
TJ= 175°C, VGE= 15V, RG= 10Ω, IC= 15A
220
270
320
370
EON
GIPD041020131542FSR
Figure 23. Short-circuit time and current vs VGE
tsc
10
8
6
10 VGE(V)12
(µs)
11
VCC= 360V, RG= 10W
4
tSC
ISC
13
12
ISC(A)
100
50
150
200
250
14
30014
GIPD161020131059SA
Figure 24. Switching times vs collector current
TJ= 175 °C, VGE= 15 V, RG= 10 Ω, VCC= 400 V
t
1IC(A)
(ns)
0 10 20
10
30
tf
tdoff100
tr
tdon
GIPD041020131549FSR
STGB15H60DF, STGF15H60DF, STGP15H60DFElectrical characteristics (curves)
DS9881 - Rev 3 page 8/24
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Figure 25. Switching times vs gate resistance
t
1RG(Ω)
(ns)
2 12 22
10
32
tf
TJ= 175°C, VGE= 15V, IC= 15A, VCC= 400V
42
100
tdon
tdoff
tr
GIPD041020131556FSR
Figure 26. Reverse recovery current vs diode currentslope
Irm
0di/dt(A/µs)
(A)
0 200 400
10
600
IF = 15A, Vr = 400V
800
15=175°C
=25°C
20
5
TJ
TJ
GIPD041020131622FSR
Figure 27. Reverse recovery time vs diode current slope
trr
0di/dt(A/µs)
(µs)
0 200 400
80
600
IF = 15A, Vr = 400V
800
120
=175°C
=25°C
160
40
TJ
TJ
GIPD041020131630FSR
Figure 28. Reverse recovery charge vs diode currentslope
Qrr
0di/dt(A/µs)
(nC)
0 200 400
400
600
IF = 15A, Vr = 400V
800
600=175°C
=25°C200
TJ
TJ
GIPD041020131635FSR
Figure 29. Reverse recovery energy vs diode current slope
Err
0di/dt(A/µs)
(µJ)
0 200 400
80
600
IF = 15A, Vr = 400V
800
120=175°C
=25°C40
160
TJ
TJ
GIPD041020131638FSR
STGB15H60DF, STGF15H60DF, STGP15H60DFElectrical characteristics (curves)
DS9881 - Rev 3 page 9/24
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Figure 30. Thermal impedance for IGBT
10 10 10 10 10 tp(s)-5 -4 -3-2 -1
10-2
10-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-cδ=tp/t
tp
t
Single pulse
δ=0.5
ZthTO2T_B
Figure 31. Thermal impedance for diode
STGB15H60DF, STGF15H60DF, STGP15H60DFElectrical characteristics (curves)
DS9881 - Rev 3 page 10/24
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3 Test circuits
Figure 32. Test circuit for inductive load switching
A AC
E
G
B
RG+
-
G
C 3.3µF1000
µF
L=100 µH
VCC
E
D.U.T
B
AM01504v1
Figure 33. Gate charge test circuit
AM01505v1
k
k
k
k
k
k
Figure 34. Switching waveform
AM01506v1
90%
10%
90%
10%
VG
VCE
IC td(on)ton
tr(Ion)
td(off)
toff
tf
tr(Voff)tcross
90%
10%
Figure 35. Diode reverse recovery waveform
25
STGB15H60DF, STGF15H60DF, STGP15H60DFTest circuits
DS9881 - Rev 3 page 11/24
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4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.
STGB15H60DF, STGF15H60DF, STGP15H60DFPackage information
DS9881 - Rev 3 page 12/24
https://www.st.com/ecopackhttp://www.st.com
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4.1 D²PAK (TO-263) type A2 package information
Figure 36. D²PAK (TO-263) type A2 package outline
0079457_A2_25
STGB15H60DF, STGF15H60DF, STGP15H60DFD²PAK (TO-263) type A2 package information
DS9881 - Rev 3 page 13/24
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Table 8. D²PAK (TO-263) type A2 package mechanical data
Dim.mm
Min. Typ. Max.
A 4.40 4.60
A1 0.03 0.23
b 0.70 0.93
b2 1.14 1.70
c 0.45 0.60
c2 1.23 1.36
D 8.95 9.35
D1 7.50 7.75 8.00
D2 1.10 1.30 1.50
E 10.00 10.40
E1 8.70 8.90 9.10
E2 7.30 7.50 7.70
e 2.54
e1 4.88 5.28
H 15.00 15.85
J1 2.49 2.69
L 2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R 0.40
V2 0° 8°
Figure 37. D²PAK (TO-263) recommended footprint (dimensions are in mm)
Footprint
STGB15H60DF, STGF15H60DF, STGP15H60DFD²PAK (TO-263) type A2 package information
DS9881 - Rev 3 page 14/24
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4.2 D²PAK packing information
Figure 38. D²PAK tape outline
STGB15H60DF, STGF15H60DF, STGP15H60DFD²PAK packing information
DS9881 - Rev 3 page 15/24
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Figure 39. D²PAK reel outline
A
D
B
Full radius
Tape slot in core for tape start
2.5mm min.width
G measured at hub
C
N
40mm min. access hole at slot location
T
AM06038v1
Table 9. D²PAK tape and reel mechanical data
Tape Reel
Dim.mm
Dim.mm
Min. Max. Min. Max.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base quantity 1000
P2 1.9 2.1 Bulk quantity 1000
R 50
T 0.25 0.35
W 23.7 24.3
STGB15H60DF, STGF15H60DF, STGP15H60DFD²PAK packing information
DS9881 - Rev 3 page 16/24
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4.3 TO-220FP package information
Figure 40. TO-220FP package outline
7012510_Rev_12_B
STGB15H60DF, STGF15H60DF, STGP15H60DFTO-220FP package information
DS9881 - Rev 3 page 17/24
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Table 10. TO-220FP package mechanical data
Dim.mm
Min. Typ. Max.
A 4.4 4.6
B 2.5 2.7
D 2.5 2.75
E 0.45 0.7
F 0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
STGB15H60DF, STGF15H60DF, STGP15H60DFTO-220FP package information
DS9881 - Rev 3 page 18/24
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4.4 TO-220 type A package information
Figure 41. TO-220 type A package outline
0015988_typeA_Rev_22
STGB15H60DF, STGF15H60DF, STGP15H60DFTO-220 type A package information
DS9881 - Rev 3 page 19/24
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Table 11. TO-220 type A package mechanical data
Dim.mm
Min. Typ. Max.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.55
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10.00 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13.00 14.00
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95
STGB15H60DF, STGF15H60DF, STGP15H60DFTO-220 type A package information
DS9881 - Rev 3 page 20/24
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5 Ordering information
Table 12. Order codes
Order code Marking Package Packing
STGB15H60DF GB15H60DF D2PAK Tape and reel
STGF15H60DF GF15H60DF TO-220FPTube
STGP15H60DF GP15H60DF TO-220
STGB15H60DF, STGF15H60DF, STGP15H60DFOrdering information
DS9881 - Rev 3 page 21/24
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Revision history
Table 13. Document revision history
Date Version Changes
12-Aug-2013 1 Initial release.
17-Oct-2013 2
Document status promoted form preliminary to production data.
Added Section 2.1: Electrical characteristics (curves).
Minor text changes.
09-Apr-2019 3
Updated applications and description on cover page.
Updated Section 4 Package information.
Minor text changes.
STGB15H60DF, STGF15H60DF, STGP15H60DF
DS9881 - Rev 3 page 22/24
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Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
4.1 D²PAK (TO-263) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.2 D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.3 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.4 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
5 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
STGB15H60DF, STGF15H60DF, STGP15H60DFContents
DS9881 - Rev 3 page 23/24
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IMPORTANT NOTICE – PLEASE READ CAREFULLY
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STGB15H60DF, STGF15H60DF, STGP15H60DF
DS9881 - Rev 3 page 24/24
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1 Electrical ratings2 Electrical characteristics2.1 Electrical characteristics (curves)
3 Test circuits4 Package information4.1 D²PAK (TO-263) type A2 package information4.2 D²PAK packing information4.3 TO-220FP package information4.4 TO-220 type A package information
5 Ordering informationRevision history