STGB15H60DF, STGF15H60DF, STGP15H60DF CE(sat) · 1 Electrical ratings Table 1. Absolute maximum...

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1 2 3 TO-220 TAB 1 2 3 TO-220FP 1 3 TAB D PAK 2 C(2, TAB) E(3) NG1E3C2T G(1) Features High speed switching Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated Ultrafast soft recovery antiparallel diode Applications Motor control UPS, PFC Description These devices are IGBTs developed using an advanced proprietary trench gate field- stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGB15H60DF STGF15H60DF STGP15H60DF Trench gate field-stop IGBT, H series 600 V, 14 A high speed STGB15H60DF, STGF15H60DF, STGP15H60DF Datasheet DS9881 - Rev 3 - April 2019 For further information contact your local STMicroelectronics sales office. www.st.com

Transcript of STGB15H60DF, STGF15H60DF, STGP15H60DF CE(sat) · 1 Electrical ratings Table 1. Absolute maximum...

  • 1 23

    TO-220

    TAB

    12

    3

    TO-220FP

    13

    TAB

    D PAK2

    C(2, TAB)

    E(3)NG1E3C2T

    G(1)

    Features• High speed switching• Tight parameters distribution• Safe paralleling• Low thermal resistance• Short-circuit rated• Ultrafast soft recovery antiparallel diode

    Applications• Motor control• UPS, PFC

    DescriptionThese devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents anoptimum compromise between conduction and switching losses to maximize theefficiency of high switching frequency converters. Furthermore, a slightly positiveVCE(sat) temperature coefficient and very tight parameter distribution result in saferparalleling operation.

    Product status link

    STGB15H60DF

    STGF15H60DF

    STGP15H60DF

    Trench gate field-stop IGBT, H series 600 V, 14 A high speed

    STGB15H60DF, STGF15H60DF, STGP15H60DF

    Datasheet

    DS9881 - Rev 3 - April 2019For further information contact your local STMicroelectronics sales office.

    www.st.com

    https://www.st.com/en/product/STGB15H60DFhttps://www.st.com/en/product/STGF15H60DFhttps://www.st.com/en/product/STGP15H60DFhttp://www.st.com

  • 1 Electrical ratings

    Table 1. Absolute maximum ratings

    Symbol ParameterValue

    UnitD2PAK, TO-220 TO-220FP

    VCES Collector-emitter voltage (VGE = 0 V) 600 V

    ICContinuous collector current at TC = 25 °C 30 30 (1)

    AContinuous collector current at TC = 100 °C 15 15 (1)

    ICP (2) Pulsed collector current 60 60 A

    VGE Gate-emitter voltage ±20 V

    IFContinuous forward current TC = 25 °C 30 30 (1)

    AContinuous forward current at TC = 100 °C 15 15 (1)

    IFP (2) Pulsed forward current 60 60 A

    VISO

    Insulation withstand voltage (RMS) from all three leads toexternal heat sink

    (t = 1 s; Tc = 25 °C)2500 V

    PTOT Total power dissipation at TC = 25 °C 115 30 W

    TSTG Storage temperature range -55 to 150°C

    TJ Operating junction temperature range -55 to 175

    1. Limited by maximum junction temperature.2. Pulse width limited by maximum junction temperature.

    Table 2. Thermal data

    Symbol ParameterValue

    UnitD2PAK, TO-220 TO-220FP

    RthJC Thermal resistance junction-case IGBT 1.3 5 °C/W

    RthJC Thermal resistance junction-case diode 2.78 6.25 °C/W

    RthJA Thermal resistance junction-ambient 62.5 62.5 °C/W

    STGB15H60DF, STGF15H60DF, STGP15H60DFElectrical ratings

    DS9881 - Rev 3 page 2/24

  • 2 Electrical characteristics

    TC = 25 °C unless otherwise specified.

    Table 3. Static

    Symbol Parameter Test conditions Min. Typ. Max. Unit

    V(BR)CESCollector-emitter breakdownvoltage VGE = 0 V, IC = 2 mA 600 V

    VCE(sat)Collector-emitter saturationvoltage

    VGE = 15 V, IC= 15 A 1.6 2.0

    V

    VGE = 15 V, IC = 15 A

    TJ = 125 °C1.7

    VGE = 15 V, IC = 15 A

    TJ = 175 °C1.8

    VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5.0 6.0 7.0 V

    ICES Collector cut-off currentVCE = 600 V

    VGE = 0 V25 μA

    IGES Gate-emitter leakage currentVGE = ±20 V

    VCE = 0 V±250 nA

    Table 4. Dynamic

    Symbol Parameter Test conditions Min. Typ. Max. Unit

    Cies Input capacitanceVCE = 25 V, f = 1 MHz,

    VGE = 0 V-

    1952

    - pFCoes Output capacitance 78

    Cres Reverse transfer capacitance 45

    Qg Total gate charge VCC = 480 V, IC = 15 A,

    VGE = 0 to 15 V (see Figure 33. Gatecharge test circuit)

    -

    81

    - nCQge Gate-emitter charge 8

    Qgc Gate-collector charge 42

    Table 5. Switching characteristics (inductive load)

    Symbol Parameter Test conditions Min. Typ. Max. Unit

    td(on) Turn-on delay time VCE = 400 V, IC = 15 A,

    RG = 10 Ω, VGE = 15 V (seeFigure 32. Test circuit for inductive loadswitching and Figure 34. Switchingwaveform)

    24.5

    -

    nstr Current rise time 8.2

    (di/dt)on Turn-on current slope 1470 A/μs

    td(on) Turn-on delay time VCE = 400 V, IC = 15 A,

    RG = 10 Ω, VGE = 15 V

    TJ = 175 °C (see Figure 32. Test circuitfor inductive load switching andFigure 34. Switching waveform)

    25ns

    tr Current rise time 9

    (di/dt)on Turn-on current slope 1370 A/μs

    STGB15H60DF, STGF15H60DF, STGP15H60DFElectrical characteristics

    DS9881 - Rev 3 page 3/24

  • Symbol Parameter Test conditions Min. Typ. Max. Unit

    tr(Voff) Off voltage rise time VCE = 400 V, IC = 15 A,

    RG = 10 Ω, VGE = 15 V (seeFigure 32. Test circuit for inductive loadswitching and Figure 34. Switchingwaveform)

    18

    - ns

    td(off) Turn-off delay time 118

    tf Current fall time 69

    tr(Voff) Off voltage rise time VCE = 400 V, IC = 15 A,

    RG = 10 Ω, VGE = 15 V

    TJ = 175 °C (see Figure 32. Test circuitfor inductive load switching andFigure 34. Switching waveform)

    27

    td(off) Turn-off delay time 124

    tf Current fall time 101

    tsc Short-circuit withstand timeVCC ≤ 360 V, VGE = 15 V,

    RG = 10 Ω3 5 - μs

    Table 6. Switching energy (inductive load)

    Symbol Parameter Test conditions Min. Typ. Max. Unit

    Eon (1) Turn-on switching energy VCE = 400 V, IC = 15 A,

    RG = 10 Ω, VGE = 15 V(see Figure 32. Test circuit for inductiveload switching)

    -

    136

    - μJ

    Eoff (2) Turn-off switching energy 207

    Ets Total switching energy 343

    Eon(1) Turn-on switching energy VCE = 400 V, IC = 15 A,

    RG = 10 Ω, VGE = 15 V

    TJ = 175 °C(see Figure 32. Test circuit for inductiveload switching)

    224

    Eoff (2) Turn-off switching energy 329

    Ets Total switching energy 553

    1. Including the reverse recovery of the diode.2. Including the tail of the collector current.

    Table 7. Collector-emitter diode

    Symbol Parameter Test conditions Min. Typ. Max. Unit

    VF Forward on-voltageIF = 15 A

    -1.8 2.2

    VIF = 15 A, TJ = 175 °C 1.3

    trr Reverse recovery time Vr = 60 V; IF = 15 A;

    diF/dt = 100 A / μs(see Figure 35. Diode reverse recoverywaveform)

    -

    103 ns

    Qrr Reverse recovery charge 128 nC

    Irrm Reverse recovery current 2.5 A

    trr Reverse recovery time Vr = 60 V; IF = 15 A;

    diF/dt = 100 A / μs

    TJ = 175 °C(see Figure 35. Diode reverse recoverywaveform)

    182 ns

    Qrr Reverse recovery charge 437 nC

    Irrm Reverse recovery current 4.8 A

    STGB15H60DF, STGF15H60DF, STGP15H60DFElectrical characteristics

    DS9881 - Rev 3 page 4/24

  • 2.1 Electrical characteristics (curves)

    Figure 1. Power dissipation vs case temperature forD2PAK and TO-220

    Ptot

    60

    40

    20

    00 25 TC(°C)

    (W)

    100

    80

    50 75

    100

    175125 150

    120

    GIPD041020131126FSR

    Figure 2. Collector current vs case temperature for D2PAKand TO-220

    IC

    10

    5

    00 25 TC(°C)

    (A)

    100

    15

    50 75

    20

    25

    175

    VGE ≥ 15V, TJ ≤ 175 °C

    125 150

    30

    GIPD011020131132FSR

    Figure 3. Power dissipation vs case temperature forTO-220FP

    Ptot

    10

    00 TC(°C)

    (W)

    100

    20

    50 150

    30

    GIPD151020131527SA

    Figure 4. Collector current vs case temperature forTO-220FP

    IC

    8

    4

    00 TC(°C)

    (A)

    100

    12

    50

    16

    VGE ≥ 15V, TJ ≤ 175 °C

    150

    GIPD151020131600SA

    Figure 5. Output characteristics (TJ = 25°C)

    IC

    15

    10

    5

    00 1 VCE(V)

    (A)

    4

    20

    2 3

    25

    VGE=15V

    30

    359V

    11V40

    7V

    GIPD041020131136FSR

    Figure 6. Output characteristics (TJ = 175°C)

    IC

    15

    10

    5

    00 1 VCE (V)

    (A)

    4

    20

    2 3

    25

    VGE=15 V

    30

    359V

    11V40

    7V

    GIPD041020131142FSR

    STGB15H60DF, STGF15H60DF, STGP15H60DFElectrical characteristics (curves)

    DS9881 - Rev 3 page 5/24

  • Figure 7. VCE(sat) vs junction temperature

    VCE(sat)

    1.8

    1.6

    1.4

    1.2-50 TJ(°C)

    (V)

    100

    2.0

    0 50

    2.2

    150

    2.4VGE= 15V

    IC= 30A

    IC= 15A

    IC= 10A

    GIPD041020131148FSR

    Figure 8. VCE(sat) vs collector current

    VCE(sat)

    1.6

    1.4

    1.20 IC(A)

    (V)

    15

    1.8

    5 10

    2.0

    20

    2.2

    2.4 VGE= 15V

    TJ= -40°C

    TJ= 25°C

    TJ= 175°C

    25 30

    GIPD041020131152FSR

    Figure 9. Collector current vs switching frequency forD2PAK and TO-220

    0

    10

    20

    30

    40

    1 10

    Ic [A]

    f [kHz]

    Rectangular current shape, (duty cycle = 0.5, VCC = 400 V, RG = 4,7 ΩVGE = 0/15 V, TJ = 175 °C

    Tc=80°C

    Tc=100 °C

    GIPD161020130955SA

    Figure 10. Collector current vs switching frequency forTO-220FP

    0

    5

    10

    15

    20

    1 10

    Ic [A]

    f [kHz]

    rectangular current shape,(duty cycle=0.5, VCC = 400V, RG=4.7Ω,VGE = 0/15 V, TJ =175°C)

    Tc=80°C

    Tc=100 °C

    GIPD161020130958SA

    Figure 11. Forward bias safe operating area for D2PAKand TO-220

    °

    IC

    10

    1

    0.11 VCE(V)

    (A)

    10

    10 µs

    100 µs

    1 msSingle pulseTc= 25°C, TJ

  • Figure 13. Transfer characteristics

    IC

    15

    10

    5

    06 7 VGE(V)

    (A)

    10

    20

    8 9

    25 TJ=175°C

    30

    35

    -40°C

    1125°C

    VCE=5V40

    GIPD041020131357FSR

    Figure 14. Diode VF vs forward current

    VF

    2.1

    1.7

    1.3

    0.95 IF(A)

    (V)2.5

    9

    TJ= 175°C

    13 17 21 25

    TJ= 25°C

    TJ= -40°C

    GIPD041020131406FSR

    Figure 15. Normalized VGE(th) vs junction temperature

    VGE(th)

    1.1

    1.0

    0.6-50 TJ(°C)

    (norm)

    0 50 100 150

    IC= 1 mAVCE= VGE

    0.7

    0.8

    0.9

    GIPD041020131457FSR

    Figure 16. Normalized V(BR)CES vs junction temperature

    V(BR)CES

    1.1

    1.0

    0.9-50 TJ(°C)

    (norm)

    0 50 100 150

    IC= 2mA

    GIPD041020131502FSR

    Figure 17. Capacitance variation

    C

    10VCE(V)

    (pF)

    0.1 1 10

    Ciss

    100

    1000

    10000

    CoesCres

    GIPD041020131506FSR

    Figure 18. Gate charge vs gate-emitter voltage

    VGE

    8

    0Qg(nC)

    (V)

    0 20

    IC= 15AIGE= 1mAVCC= 480V

    4

    40

    12

    60 80

    16

    GIPD041020131514FSR

    STGB15H60DF, STGF15H60DF, STGP15H60DFElectrical characteristics (curves)

    DS9881 - Rev 3 page 7/24

  • Figure 19. Switching evergy vs collector current

    E

    0IC(A)

    (µJ)

    0 5 10

    50100150

    15 20

    200250

    EON300350400450

    VCC = 400V, VGE = 15V, RG = 10Ω, TJ = 175°C

    25 30

    500550600

    EOFF

    GIPD041020131521FSR

    Figure 20. Switching energy vs gate resistance

    E

    100RG(Ω)

    (µJ)

    2 12 22

    150

    200

    250

    32 42

    300

    350 EOFF

    VCC = 400 V, VGE = 15 V, IC = 15 A, TJ = 175 °C

    400

    450

    EON

    GIPD041020131529FSR

    Figure 21. Switching energy vs temperature

    E

    10TJ(°C)

    (µJ)

    -50 0 50

    110

    210

    310

    100 150

    EOFF

    VCC= 400V, VGE= 15V, RG= 10Ω, IC= 15A

    EON

    GIPD041020131535FSR

    Figure 22. Switching energy vs collector-emitter voltage

    E

    20VCE(V)

    (µJ)

    150 250 350

    70

    120

    170

    450

    EOFF

    TJ= 175°C, VGE= 15V, RG= 10Ω, IC= 15A

    220

    270

    320

    370

    EON

    GIPD041020131542FSR

    Figure 23. Short-circuit time and current vs VGE

    tsc

    10

    8

    6

    10 VGE(V)12

    (µs)

    11

    VCC= 360V, RG= 10W

    4

    tSC

    ISC

    13

    12

    ISC(A)

    100

    50

    150

    200

    250

    14

    30014

    GIPD161020131059SA

    Figure 24. Switching times vs collector current

    TJ= 175 °C, VGE= 15 V, RG= 10 Ω, VCC= 400 V

    t

    1IC(A)

    (ns)

    0 10 20

    10

    30

    tf

    tdoff100

    tr

    tdon

    GIPD041020131549FSR

    STGB15H60DF, STGF15H60DF, STGP15H60DFElectrical characteristics (curves)

    DS9881 - Rev 3 page 8/24

  • Figure 25. Switching times vs gate resistance

    t

    1RG(Ω)

    (ns)

    2 12 22

    10

    32

    tf

    TJ= 175°C, VGE= 15V, IC= 15A, VCC= 400V

    42

    100

    tdon

    tdoff

    tr

    GIPD041020131556FSR

    Figure 26. Reverse recovery current vs diode currentslope

    Irm

    0di/dt(A/µs)

    (A)

    0 200 400

    10

    600

    IF = 15A, Vr = 400V

    800

    15=175°C

    =25°C

    20

    5

    TJ

    TJ

    GIPD041020131622FSR

    Figure 27. Reverse recovery time vs diode current slope

    trr

    0di/dt(A/µs)

    (µs)

    0 200 400

    80

    600

    IF = 15A, Vr = 400V

    800

    120

    =175°C

    =25°C

    160

    40

    TJ

    TJ

    GIPD041020131630FSR

    Figure 28. Reverse recovery charge vs diode currentslope

    Qrr

    0di/dt(A/µs)

    (nC)

    0 200 400

    400

    600

    IF = 15A, Vr = 400V

    800

    600=175°C

    =25°C200

    TJ

    TJ

    GIPD041020131635FSR

    Figure 29. Reverse recovery energy vs diode current slope

    Err

    0di/dt(A/µs)

    (µJ)

    0 200 400

    80

    600

    IF = 15A, Vr = 400V

    800

    120=175°C

    =25°C40

    160

    TJ

    TJ

    GIPD041020131638FSR

    STGB15H60DF, STGF15H60DF, STGP15H60DFElectrical characteristics (curves)

    DS9881 - Rev 3 page 9/24

  • Figure 30. Thermal impedance for IGBT

    10 10 10 10 10 tp(s)-5 -4 -3-2 -1

    10-2

    10-1

    K

    0.2

    0.05

    0.02

    0.01

    0.1

    Zth=k Rthj-cδ=tp/t

    tp

    t

    Single pulse

    δ=0.5

    ZthTO2T_B

    Figure 31. Thermal impedance for diode

    STGB15H60DF, STGF15H60DF, STGP15H60DFElectrical characteristics (curves)

    DS9881 - Rev 3 page 10/24

  • 3 Test circuits

    Figure 32. Test circuit for inductive load switching

    A AC

    E

    G

    B

    RG+

    -

    G

    C 3.3µF1000

    µF

    L=100 µH

    VCC

    E

    D.U.T

    B

    AM01504v1

    Figure 33. Gate charge test circuit

    AM01505v1

    k

    k

    k

    k

    k

    k

    Figure 34. Switching waveform

    AM01506v1

    90%

    10%

    90%

    10%

    VG

    VCE

    IC td(on)ton

    tr(Ion)

    td(off)

    toff

    tf

    tr(Voff)tcross

    90%

    10%

    Figure 35. Diode reverse recovery waveform

    25

    STGB15H60DF, STGF15H60DF, STGP15H60DFTest circuits

    DS9881 - Rev 3 page 11/24

  • 4 Package information

    In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.

    STGB15H60DF, STGF15H60DF, STGP15H60DFPackage information

    DS9881 - Rev 3 page 12/24

    https://www.st.com/ecopackhttp://www.st.com

  • 4.1 D²PAK (TO-263) type A2 package information

    Figure 36. D²PAK (TO-263) type A2 package outline

    0079457_A2_25

    STGB15H60DF, STGF15H60DF, STGP15H60DFD²PAK (TO-263) type A2 package information

    DS9881 - Rev 3 page 13/24

  • Table 8. D²PAK (TO-263) type A2 package mechanical data

    Dim.mm

    Min. Typ. Max.

    A 4.40 4.60

    A1 0.03 0.23

    b 0.70 0.93

    b2 1.14 1.70

    c 0.45 0.60

    c2 1.23 1.36

    D 8.95 9.35

    D1 7.50 7.75 8.00

    D2 1.10 1.30 1.50

    E 10.00 10.40

    E1 8.70 8.90 9.10

    E2 7.30 7.50 7.70

    e 2.54

    e1 4.88 5.28

    H 15.00 15.85

    J1 2.49 2.69

    L 2.29 2.79

    L1 1.27 1.40

    L2 1.30 1.75

    R 0.40

    V2 0° 8°

    Figure 37. D²PAK (TO-263) recommended footprint (dimensions are in mm)

    Footprint

    STGB15H60DF, STGF15H60DF, STGP15H60DFD²PAK (TO-263) type A2 package information

    DS9881 - Rev 3 page 14/24

  • 4.2 D²PAK packing information

    Figure 38. D²PAK tape outline

    STGB15H60DF, STGF15H60DF, STGP15H60DFD²PAK packing information

    DS9881 - Rev 3 page 15/24

  • Figure 39. D²PAK reel outline

    A

    D

    B

    Full radius

    Tape slot in core for tape start

    2.5mm min.width

    G measured at hub

    C

    N

    40mm min. access hole at slot location

    T

    AM06038v1

    Table 9. D²PAK tape and reel mechanical data

    Tape Reel

    Dim.mm

    Dim.mm

    Min. Max. Min. Max.

    A0 10.5 10.7 A 330

    B0 15.7 15.9 B 1.5

    D 1.5 1.6 C 12.8 13.2

    D1 1.59 1.61 D 20.2

    E 1.65 1.85 G 24.4 26.4

    F 11.4 11.6 N 100

    K0 4.8 5.0 T 30.4

    P0 3.9 4.1

    P1 11.9 12.1 Base quantity 1000

    P2 1.9 2.1 Bulk quantity 1000

    R 50

    T 0.25 0.35

    W 23.7 24.3

    STGB15H60DF, STGF15H60DF, STGP15H60DFD²PAK packing information

    DS9881 - Rev 3 page 16/24

  • 4.3 TO-220FP package information

    Figure 40. TO-220FP package outline

    7012510_Rev_12_B

    STGB15H60DF, STGF15H60DF, STGP15H60DFTO-220FP package information

    DS9881 - Rev 3 page 17/24

  • Table 10. TO-220FP package mechanical data

    Dim.mm

    Min. Typ. Max.

    A 4.4 4.6

    B 2.5 2.7

    D 2.5 2.75

    E 0.45 0.7

    F 0.75 1

    F1 1.15 1.70

    F2 1.15 1.70

    G 4.95 5.2

    G1 2.4 2.7

    H 10 10.4

    L2 16

    L3 28.6 30.6

    L4 9.8 10.6

    L5 2.9 3.6

    L6 15.9 16.4

    L7 9 9.3

    Dia 3 3.2

    STGB15H60DF, STGF15H60DF, STGP15H60DFTO-220FP package information

    DS9881 - Rev 3 page 18/24

  • 4.4 TO-220 type A package information

    Figure 41. TO-220 type A package outline

    0015988_typeA_Rev_22

    STGB15H60DF, STGF15H60DF, STGP15H60DFTO-220 type A package information

    DS9881 - Rev 3 page 19/24

  • Table 11. TO-220 type A package mechanical data

    Dim.mm

    Min. Typ. Max.

    A 4.40 4.60

    b 0.61 0.88

    b1 1.14 1.55

    c 0.48 0.70

    D 15.25 15.75

    D1 1.27

    E 10.00 10.40

    e 2.40 2.70

    e1 4.95 5.15

    F 1.23 1.32

    H1 6.20 6.60

    J1 2.40 2.72

    L 13.00 14.00

    L1 3.50 3.93

    L20 16.40

    L30 28.90

    øP 3.75 3.85

    Q 2.65 2.95

    STGB15H60DF, STGF15H60DF, STGP15H60DFTO-220 type A package information

    DS9881 - Rev 3 page 20/24

  • 5 Ordering information

    Table 12. Order codes

    Order code Marking Package Packing

    STGB15H60DF GB15H60DF D2PAK Tape and reel

    STGF15H60DF GF15H60DF TO-220FPTube

    STGP15H60DF GP15H60DF TO-220

    STGB15H60DF, STGF15H60DF, STGP15H60DFOrdering information

    DS9881 - Rev 3 page 21/24

  • Revision history

    Table 13. Document revision history

    Date Version Changes

    12-Aug-2013 1 Initial release.

    17-Oct-2013 2

    Document status promoted form preliminary to production data.

    Added Section 2.1: Electrical characteristics (curves).

    Minor text changes.

    09-Apr-2019 3

    Updated applications and description on cover page.

    Updated Section 4 Package information.

    Minor text changes.

    STGB15H60DF, STGF15H60DF, STGP15H60DF

    DS9881 - Rev 3 page 22/24

  • Contents

    1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

    2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

    2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

    3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

    4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

    4.1 D²PAK (TO-263) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

    4.2 D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

    4.3 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

    4.4 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

    5 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21

    Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22

    STGB15H60DF, STGF15H60DF, STGP15H60DFContents

    DS9881 - Rev 3 page 23/24

  • IMPORTANT NOTICE – PLEASE READ CAREFULLY

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    © 2019 STMicroelectronics – All rights reserved

    STGB15H60DF, STGF15H60DF, STGP15H60DF

    DS9881 - Rev 3 page 24/24

    http://www.st.com/trademarks

    1 Electrical ratings2 Electrical characteristics2.1 Electrical characteristics (curves)

    3 Test circuits4 Package information4.1 D²PAK (TO-263) type A2 package information4.2 D²PAK packing information4.3 TO-220FP package information4.4 TO-220 type A package information

    5 Ordering informationRevision history