Improved N-Type 4h-Sic Epitaxial Layer Radiation Detectors ...
State of the art on epitaxial GaAs detectors
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Transcript of State of the art on epitaxial GaAs detectors
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State of the art on epitaxial GaAs detectors G.C. Suna, N. Mañeza, M. Zazouia, A.Al-Ajilib, V.O'Sheab, F.Quaratib,
K.M.Smithb, D. Chambellanc, O. Galc, Ph. Pillotc, M. Lenoird, J. P. Montagned,
A. Bchetniae, J.C. Bourgoinf
a LMDH, Université Pierre et Marie Curie (Paris 6), Franceb Department of Physics and Astronomy, University of Glasgow,UK.c LIST/DIMRI, CEA , Franced Hospital Armand Trousseau, Paris, France.e Lab. de Physique des Matériaux, Faculté des Sciences de Monastir, Tunisief GESEC R&D, 68 Avenue de la Forêt, 77210 Avon, France
GESEC R&D Inc.Semiconductor Materials Engineering
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Motivation
Decrease the dose (more than a factor of 10 compared to scintillator flat panels) in X-ray imaging
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Outline
Review of X-ray detection with GaAs
Development of epi-growth of GaAs
Device processing
Device electrical characteristics
Performance of radiation detectors
Limitations of current devices and ways to overcome
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History of GaAs radiation detectors (1)
Early work with LPE GaAs
(by Tavendale group, 1970)
Three typical 241Am and 57Co -ray spectra, at 100V bias and 130K, from 1.5mm diameter, 80m thick LPE GaAs surface barrier detectors, (carrier concentration ~ 6 x 1013 cm-
3), fabricated on tin-doped substrates.
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History of GaAs radiation detectors (2)MBE epi-GaAs
(Bertuccio et al., 1996/97)
Pulse height spectrum of photons from an 241Am source detected in a 170 x 320m2 , 5 micron thick MBE undoped GaAs diode detector at 15V reverse bias
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Progress in the growth of epitaxial GaAs
• One 4 inch, 550 µm layer • Thickness profile of epi-GaAs grown on four inch substrate
Source: SI GaAsn+ substrate: n type (<1014 cm-3)
SI substrate: p type (<1014 cm-3)
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Electronic properties of epitaxial GaAs
• Photoluminescence mapping
SI GaAs Epitaxial GaAs layer CdTe
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Technique to fabricate detectors
ohmic contact
p+ ion implantation (35 nm)
GaAs epilayer
n+ substrate (Cz GaAs)
n+ ion implantation (35 nm)
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Current-Voltage characteristic of a small pad diode
2 nA/mm2 at 50 V
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Alpha particle pulse height spectra
• Combined source 241Am(5.5 MeV), 244Cm (5.8 MeV) and 239Pu (5.2 MeV)
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Charge collection efficiency
Fitted values at 100 V, giving charge collection efficiency of 85%.
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Pulse height spectra of monoenergetic X-rays
• Characteristic K-series X-rays of Ag, Ba and Nb.
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Photocurrent versus radiation dose
1mm2 epitaxial GaAs diode detector
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Limitation: width of depleted zone
Three ways to overcome it:
1. growth conditions
2. electron irradiation
3. use of 3D detectors
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1 MeV electron irradiation
Low defects not enough to compensate free carriers. Irradiation introduces defects increase depleted depth
Before
irradiation
After
irradiation
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3D detectors
‘3D’ SI-LEC GaAs pixel detector bonded to DASH-E ROIC
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