SPICE MODEL of 2SC3632-AZ in SPICE PARK

All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

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COMPONENTS: TRANSISTOR

PART NUMBER: 2SC3632-AZ

MANUFACTURER: NEC

Device Modeling Report

Bee Technologies Inc.


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TRANSISTOR MODEL

PSpice model parameter

Model description

IS Saturation Current

BF Ideal Maximum Forward Beta

NF Forward Current Emission Coefficient

VAF Forward Early Voltage

IKF Forward Beta Roll-off Knee Current

ISE Non-ideal Base-Emitter Diode Saturation Current

NE Non-ideal Base-Emitter Diode Emission Coefficient

BR Ideal Maximum Reverse Beta

NR Reverse Emission Coefficient

VAR Reverse Early Voltage

IKR Reverse Beta Roll-off Knee Current

ISC Non-ideal Base-Collector Diode Saturation Current

NC Non-ideal Base-Collector Diode Emission Coefficient

NK Forward Beta Roll-off Slope Exponent

RE Emitter Resistance

RB Base Resistance

RC Series Collector Resistance

CJE Zero-bias Emitter-Base Junction Capacitance

VJE Emitter-Base Junction Potential

MJE Emitter-Base Junction Grading Coefficient

CJC Zero-bias Collector-Base Junction Capacitance

VJC Collector-base Junction Potential

MJC Collector-base Junction Grading Coefficient

FC Coefficient for Onset of Forward-bias Depletion Capacitance

TF Forward Transit Time

XTF Coefficient for TF Dependency on Vce

VTF Voltage for TF Dependency on Vce

ITF Current for TF Dependency on Ic

PTF Excess Phase at f=1/2pi*TF

TR Reverse Transit Time

EG Activation Energy

XTB Forward Beta Temperature Coefficient

XTI Temperature Coefficient for IS


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Ic

Vce

VAR

(X1,Y1)

(X2,Y2)

Y=aX+b

Reverse Early Voltage Characteristic

Reverse


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Reverse DC Beta Characteristic (Ie vs. hFE)

Measurement

Simulation

Emitter Current


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Ic

VceVAF

(X1,Y1)

(X2,Y2)

Y=aX+b

Forward Early Voltage Characteristic

Forward


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C-B Capacitance Characteristics E-B Capacitance Characteristics

Measurement

Simulation

Measurement

Simulation


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V1

5VdcI1

0Adc

0

v sence

0Vdc

Q1Q2SC3632-AZ

I(vsence)

10mA 100mA 1.0A2.0mA

I(vsence)/ IB(Q1)

1.0

10

100

1.0K

Transistor hFE-IC Characteristics

Circuit Simulation Result

Evaluation Circuit


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Comparison Graph

IC(A) hFE

Error(%) Measurement Simulation

0.00200 43.000 42.361 -1.486

0.00500 49.000 48.799 -0.410

0.01000 51.000 53.408 4.722

0.02000 54.500 57.014 4.613

0.05000 56.000 57.791 3.198

0.10000 53.500 51.507 -3.725

0.50000 7.100 7.241 1.986


Simulation Result


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VC

I1

0Adc

0

F1

F5

Q1Q2SC3632-AZ

IC(Q1)

10mA 100mA 1.0A5.0mA

V(Q1:c)

1.0mV

10mV

100mV

1.0V

10V

VCE(Sat)-IC Characteristics


Evaluation Circuit


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Comparison Graph

IC(A) VCE(sat)(V)


0.00500 0.04400 0.04598 4.49545

0.01000 0.04600 0.04493 -2.32391

0.02000 0.04900 0.04692 -4.25510

0.05000 0.05900 0.05869 -0.53051

0.10000 0.07900 0.08203 3.82911

0.20000 0.13500 0.13292 -1.54222


Simulation Result


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VC

I1

0Adc

0

F1

F5

Q1Q2SC3632-AZ

IC(Q1)

10mA 100mA 1.0A5.0mA

V(Q1:b)

100mV

1.0V

10V

VBE(Sat)-IC Characteristics


Evaluation Circuit


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Comparison Graph

IC(A) VBE(sat)(V)


0.00500 0.600 0.579 -3.528

0.01000 0.630 0.600 -4.758

0.02000 0.655 0.624 -4.807

0.05000 0.695 0.662 -4.694

0.10000 0.740 0.705 -4.764

0.20000 0.800 0.771 -3.582

0.50000 0.910 0.935 2.727


Simulation Result


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Q1Q2SC3632-AZ

V1TD = 8uTF = 100nsPW = 20usPER = 500us

V1 = 5

TR = 100ns

V2 = -5

R1

37.9

R2

52.8

0

VCC

250

D1

D1N5817D2

D1N5817

RL

500

L1

30nH

1 2

L2

30n

1 2

Time

0s 5us 10us 15us 20us

1 V(L2:2) 2 V(Q1:c)

-10V

-5V

0V

5V

10V1

0V

100V

200V

300V2

>>

Switching Characteristics Circuit simulation result

Evaluation circuit

Simulation result

Measurement Simulation %Error

tf (us) 0.2000 0.1998 -0.0780

tstg (us) 4.0000 3.9966 -0.0850


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V1

10Vdc

0

I1

0.2mAdc

Q1Q2SC3632-AZ

V_V1

0V 2V 4V 6V 8V 10V

IC(Q1)

0A

20mA

40mA

60mA

80mA

100mA

Output Characteristics


Evaluation Circuit

IB=0.2mA

0.4mA

0.6mA

0.8mA

1.0mA

1.2mA

1.4mA

1.6mA


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Output Characteristics Reference

SPICE MODEL of 2SC3632-AZ in SPICE PARK

Technology

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