SOI based platforms for IoT optimized...
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SOI based platforms for IoT optimized Applications
Carlos Mazure Giorgio Cesana
Executive Director Executive Co-Director
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Agenda
SOI Consortium in a nut shell
IoT opportunities and challenges
FD-SOI Solutions
RF-SOI Solutions
More than Moore Solutions and Opportunities
Takeaways
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SOI Consortium at a Glance
An industrial, non -profit consortium representing the complete SOI based microelectronics value chain:
Mission: Focus on application platforms and required ecosystem
Market application technology supply chain
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Source : GSA/McKinsey report on IOT 2015
Very fragmentedVery different requirements per application
IoT
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Data Transmission Increase leads to an Energy Dilemma
*WW Elec in 2015 ~23.000 TWh
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Centre for Energy Efficient Telecommunications
University of Melbourne June 2013
www.ceet.unimelb.edu.au/publications
Wireless data transmission power efficiency:
Serial short reach link: best results ~ 0.5 pJ/bit
LTE: between 300 and 600 J/bit
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IoT to generate a Data Deluge
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How much energy to transfer & process one YottaByte ?
2010
2016
2020
2010 - source IDC:
1250 Billion GB of data
generated
Generated data is sensor
dominated
Storage capacity growing
30% slower than generated
data
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Energy Production vs. IoT Energy Consumption
WW Energy Production
WW IoT Energy Consumption
Energy
Time
2020?
Low Power Technologies are a must for the IoTMarket Development
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SOI Solutions for the IoT Energy Dilemma
The SOI platforms offer key solutions to face the growing IoT energy hunger.
RFSOI for energy efficient data transmission
Power SOI for efficient power management
Photonics for low energy wired data transmission
MEMS SOI for efficient on chip sensor co-integration
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Wireless connectivityLTE, WIFI, BT
APU
Memory
Power Mgt
Sensors
Wireless connectivit
yWIFI, BT, LTE
MPU, MCU
Memory
Power Mgt
Sensors (MEMS, radar,
camera)
NetworkingWireless
connectivity
APU, MCU
Memory
Power Mgt
Sensors
All IoT devices are connected with computing, sensing, power management, memory capability, an energy supply source and dependent of their overall power consumption
Sensor Hub: Process, Transmit, Ultra Low Power
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FD- SOI
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The Ultra Low Power Ecosystem: FDSOI
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Substrates
R&D
Tools & EDAIP
Foundries
AdoptersPublic Domain
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28nm FD- SOI Mass Production Platform
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GlobalFoundries 22FDX Platform
Platform Extensions
22FDX Base Platform
4 Core Vts
2 IO Vts @ 1.2/1.5/1.8v
Passives
SRAMs (HD, HC, LV, ULV, TP)
8T/12T libraries
Software controlled Forward/Reverse body-bias
GLOBALFOUNDRIES Confidential 14
-ulp adds logic libraries and memory compiler optimized for 0.4v logic operation
-ull adds devices, libraries, and memory compilers to achieve 1pA/um leakage
-uhp adds optimized BEOL stacks, 12T libraries optimized at OD, high-speed SERDES (16/28GHz), and MIM capacitor
-rfa adds RF enablement , BEOL passives, and IP for BTLE, WiFi
Base platform PDK & IP Application-optimized extensions
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FD-SOI: Radiation Robust
Robustness Benefit 20
FinFET
Alpha 1000 15
Neutron 100 10
Latchup immune not reported
Neutr
on-S
ER
in F
T/M
b
Experimental Failure-in-Time (FIT) test data SER Gain w.r.t. BULK
28
nm
FD
-SO
I
ST
65nm
Bulk
Vendor A
45nm
Bulk
ST
45nm
Bulk
Vendor A
28nm
Bulk
ST
28nm
Bulk
ST
28nm
FD-SOI
ECC not mandatory Power and Area saving
High Latch-up Immunity
Larger Integrated Memory
Rad-hard designs simpler
FD-SOI provides a more reliable platform for mission critical operation
ISS Europe March 2016
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ULP enabled at 0.4V Power Supply
ARM Cortex A7 Implementation Initial results
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1200
800
125 240
Total Power (mw)
Freq.(MHz)
GLOBALFOUNDRIES
180 210152
520
47% Less Power
FinFet like
Performance (1.2Ghz)
50% faster
performance and 18%
lower power than
28HKMG
47% lower power than
28HKMG at Iso-
Frequency
22FDX at 0.4v
92% Less Power at
520MHz
(wrt 28HKMG at
800MHz)
22FDX is the First Technology to demonstrate 0.4V operation
capability at >500Mhz on an ARM A7 Processor
Source: Verisilicon
50% Faster+
18% Less Power
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Example of wearable application: GPS
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Sony Next Gen on FD- SOI
1mW
StandardGPS on
the market
x20
20mW
On- Chip enabled functionality (RF, logic and SRAM) operating at 0.6V, instead of 1.1V
Source: EETimes
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