Small Signal Transistors , FETs and Diodes -...

Motorola Master Selection Guide Small Signal Transistors, FETs and Diodes5.1–1

Small Signal Transistors,FETs and Diodes

In Brief . . .

Page

Bipolar Transistors 5.1–2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Plastic–Encapsulated Transistors 5.1–2. . . . . . . . . . . . . . Plastic–Encapsulated Multiple Transistors 5.1–8. . . . . . . Plastic–Encapsulated SurfaceMount Transistors 5.1–10. . . . . . . . . . . . . . . . . . . . . . . . . .

Metal–Can Transistors 5.1–18. . . . . . . . . . . . . . . . . . . . . . Field–Effect Transistors 5.1–20. . . . . . . . . . . . . . . . . . . . . . . .

JFETs 5.1–20. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MOSFETs 5.1–22. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Surface Mount FETs 5.1–23. . . . . . . . . . . . . . . . . . . . . . . .

Tuning and Switching Diodes 5.1–25. . . . . . . . . . . . . . . . . . . Tuning Diodes — Abrupt Junction 5.1–25. . . . . . . . . . . . . Tuning Diodes — Hyper–Abrupt Junction 5.1–29. . . . . . Schottky Diodes 5.1–33. . . . . . . . . . . . . . . . . . . . . . . . . . . . Switching Diodes 5.1–35. . . . . . . . . . . . . . . . . . . . . . . . . . . Multiple Switching Diodes 5.1–39. . . . . . . . . . . . . . . . . . . .

GreenLine Devices 5.1–41. . . . . . . . . . . . . . . . . . . . . . . . . . . . Small Signal Multi–integrated Devices 5.1–43. . . . . . . . . . . .

New in this revision is Motorola’s GreenLine portfolio ofdevices. They feature energy–conserving traits superior tothose of our existing line of standard parts for the sameusage. GreenLine devices can actually help reduce thepower demands of your products.

Also new are the Small Signal Multi–integrated devices.These are intended to save board space by reduced partcount and functionality. Four to six devices have beenintegrated into one small package.

Also, this section highlights semiconductors that arethe most popular and have a history of high usage for themost applications.

It covers a wide range of Small Signal plastic andmetal–can semiconductors.

A large selection of encapsulated plastic transistors,FETs and diodes are available for surface mount andinsertion assembly technology. Plastic packages includeTO–92 (TO–226AA), 1 Watt TO–92 (TO–226AE), SOT–23,SC–59, SC–70/SOT–323 and SOT–223. Plastic multiplesare available in 14–pin and 16–pin dual in–line packages forinsertion applications: SO–8, SO–14, and SO–16 forsurface mount applications.

CASE 29–05TO–226AE

1–WATT (TO–92)

CASE 29–04TO–226AA

(TO–92)

12 3

12 3

Motorola Master Selection GuideSmall Signal Transistors, FETs and Diodes 5.1–2

Bipolar Transistors

Plastic–EncapsulatedTransistorsMotorola’s Small Signal TO–226 plastic transistorsencompass hundreds of devices with a wide variety ofcharacteristics for general–purpose, amplifier and switchingapplications. The popular high–volume package combinesproven reliability, performance, economy and convenience toprovide the perfect solution for industrial and consumer designproblems. All devices are laser marked for ease ofidentification and shipped in antistatic containers, as part ofMotorola’s ongoing practice of maintaining the higheststandards of quality and reliability.

Table 1. Plastic–Encapsulated General–Purpose TransistorsThese general–purpose transistors are designed for small–signal amplification from dc to low ratio frequencies. They arealso useful as oscillators and general–purpose switches. Complementary devices shown where available (Tables 1–4).

V(BR)CEOfT @ IC IC

hFE @ IC NF

NPN PNP

V(BR)CEOVoltsMin

MHzMin mA

ICmAMax Min Max mA

NFdB

Max Style

Case 29–04 — TO–226AA (TO–92)

MPS8099 MPS8599 80 150 10 500 100 300 1.0 — 1MPSA06 MPSA56 80 100 10 500 100 — 100 — 12N4410 — 80 60 10 250 60 400 10 — 1BC546 BC556 65 150 10 100 120 450 2.0 10 17BC546A — 65 150 10 100 120 220 2.0 10 17BC546B BC556B 65 150 10 100 180 450 2.0 10 17MPSA05 MPSA55 60 100 10 500 100 — 100 — 1

— MPS2907A 60 200 50 600 100 300 150 — 1BC182 BC212 50 200(1) 10 100 120 500 2.0 10 14BC237B BC307B 45 150 10 100 200 460 2.0 10 17BC337 BC327 45 210(1) 10 800 100 630 100 — 17BC547 BC557 45 150 10 100 120 800 2.0 10 17BC547A BC557A 45 150 10 100 120 220 2.0 10 17BC547B BC557B 45 150 10 100 180 450 2.0 10 17BC547C BC557C 45 150 10 100 380 800 2.0 10 17MPSA20 MPSA70 40 125 5.0 100 40 400 5.0 — 1MPS2222A — 40 300 20 600 100 300 150 — 12N4401 2N4403 40 200 20 600 100 300 150 — 12N4400 2N4402 40 150 20 600 50 150 150 — 1MPS6602 MPS6652 40 100 50 1000 50 — 500 — 12N3903 2N3905 40 200 10 200 50 150 10 6.0 12N3904 2N3906 40 250 10 200 100 300 10 5.0 1BC548 — 30 300(1) 10 100 110 800 2.0 10 17BC548A — 30 300(1) 10 100 120 220 2.0 10 17BC548B BC558B 30 300(1) 10 100 200 450 2.0 10 17BC548C — 30 300 10 100 420 800 2.0 10 172N4123 2N4125 30 200 10 200 50 150 2.0 6.0 12N4124 2N4126 25 250 10 200 120 360 2.0 4.0 1BC338 BC328 25 210(1) 10 800 100 630 100 — 17

(1) Typical

Devices listed in bold, italic are Motorola preferred devices.


Plastic–Encapsulated Transistors (continued)

Table 1. Plastic–Encapsulated General–Purpose Transistors (continued)

V(BR)CEOfT @ IC IC

hFE @ IC VCE(sat) @ IC @ IB

NPN PNP

V(BR)CEOVoltsMin

MHzMin mA

ICA

Max Min Max mAVoltsMax mA mA Style

Case 29–05 — TO–226AE (1–WATT TO–92)

BDB02D 100 50 200 0.5 40 400 100 0.7 1000 100 1BDC01D BDC02D 100 50 200 0.5 40 400 100 0.7 1000 100 14BDB01C BDB02C 80 50 200 0.5 40 400 100 0.7 1000 100 1MPS6717 80 50 200 0.5 80 — 50 0.5 250 10 1MPSW06 MPSW56 80 50 200 0.5 80 — 50 0.4 250 10 1

Table 2. Plastic–Encapsulated Low–Noise and Good h FE LinearityThese devices are designed to use on applications where good hFE linearity and low–noise characteristics are required:Instrumentation, hi–fi preamplifier.

hFE @ ICVT(4) NF(5) fT

NPN PNPV(BR)CEO

Volts Min Max mA

VT(4)

mVTyp

NF(5)

dBMax

fTMHzTyp Style

Case 29–04 — TO–226AA (TO–92)

— 2N5087 50 250 800 0.1 — 2.0 40(2) 1— 2N5086 50 150 500 0.1 — 3.0 40(2) 1

MPS6428 — 50 250 650 0.1 7.0(7) 3.5(8) 100(2) 1BC239 — 45 120 800 2.0 9.5 2.0(1) 280 17BC550B BC560B 45 180 450 2.0 — 2.5 250 17BC550C BC560C 45 380 800 2.0 — 2.5 250 17MPSA18 — 45 500 — 1.0 6.5(1) — 160 1MPS3904 MPS3906 40 100 300 10 — 5.0 200(2) 1

— MPS4250 40 250 — 10 — 2.0 — 1BC549B BC559B 30 200 450 2.0 — 2.5 250 17BC549C BC559C 30 380 800 2.0 — 2.5 250 172N5088 — 30 350 — 1.0 — 3.0 50 12N5089(6) — 25 450 — 1.0 — 2.0 50 1MPS6521 MPS6523 25 300 600 2.0 — 3.0 — 1

(1) Typical(2) Min(4) VT : Total Input Noise Voltage (see BC413/BC414 and BC415/BC416 Data Sheets) at RS = 2.0 kΩ , IC = 200 µA, VCE = 5.0 Volts.(5) NF: Noise Figure at RS = 2.0 kΩ, IC = 200 µA, VCE = 5.0 Volts. f = 30 Hz to 15 kHz.(7) RS = 10 kΩ , BW = 1.0 Hz, f = 100 MHz(8) RS = 500 Ω , BW = 1.0 Hz, f = 10 MHz




Table 3. Plastic–Encapsulated Darlington Transistors

Darlington amplifiers are cascade transistors used in applications requiring very high–gain and input impedance. Thesedevices have monolithic construction.

V I

hFE @ IC VCE(sat) @ IC & IB fT @ IC

S lNPN PNPV(BR)CEO

VoltsIC

Max Min Max mAVoltsMax mA mA Min mA Style

Case 29–05 — TO–226AE (1–WATT TO–92)

MPSW45A — 50 1000 25K 150K 200 1.5 1000 2.0 100 200 1— MPSW64 30 1000 20K — 100 1.5 100 0.1 125 10 1

Case 29–04 — TO–226AA (TO–92)

MPSA29 — 100 500 10K — 100 1.5 100 0.1 125 10 1BC373 — 80 1000 10K 160K 100 1.1 250 0.25 100 100 1MPSA27 MPSA77 60 500 10K — 100 1.5 100 0.1 — — 1BC618 — 55 1000 10K 50K 200 1.1 200 0.2 150 500 17

— MPSA75 40 500 10K — 100 1.5 100 0.1 — — 12N6427 — 40 500 20K 200K 100 1.5 500 0.5 — — 12N6426 — 40 500 30K 300K 100 1.5 500 0.5 125 10 1MPSA14 MPSA64 30 500 20K — 100 1.5 100 0.1 125 10 1MPSA13 MPSA63 30 500 10K — 100 1.5 100 0.1 125 10 1BC517 — 30 1000 30K — 20 1.0 100 0.1 200(1) 10 17

Table 4. Plastic–Encapsulated High–Current TransistorsThe following table is a listing of devices that are capable of handling a higher current range for small–signal transistors.

V(BR)CEOfT @ IC IC

hFE @ IC VCE(sat) @ IC & IB

NPN PNP

V(BR)CEOVoltsMin

MHzMin mA

ICmAMax Min Max mA

VoltsMax mA mA Style

Case 29–05 — TO–226AE (1–WATT TO–92)

MPS6715 MPS6727 40 — — 1000 50 — 1000 0.5 1000 100 1MPSW01A MPSW51A 40 50 50 1000 50 — 1000 0.5/0.7 1000 100 1

Case 29–04 — TO–226AA (TO–92)

BC489 BC490 80 200/150(1) 50 1000 60 400 100 0.3/0.5 1000 100 17BC639 BC640 80 60 10 500 40 160 150 0.5 500 50 14MPS651 MPS751 60 75 50 2000 75 — 1000 0.5 2000 200 1MPS650 MPS750 40 75 50 2000 75 — 1000 0.5 2000 200 1BC368 BC369 20 65 10 1000 60 — 1000 0.5 1000 100 1

(1) Typical




Table 5. Plastic–Encapsulated High–Voltage Amplifier TransistorsThese high–voltage transistors are designed for driving neon bulbs and indicator tubes, for direct line operation, and forother applications requiring high–voltage capability at relatively low collector current. These devices are listed in order ofdecreasing breakdown voltage (V(BR)CEO).

V(BR)CEO IChFE @ IC VCE(sat) @ IC & IB fT @ IC

DeviceType

V(BR)CEOVoltsMin

ICAmpMax Min mA

VoltsMax mA mA

MHzMin mA Style

Case 29–05 — TO–226AE (1–WATT TO–92) — NPN

BDC05 300 0.5 40 25 2.0 20 2.0 60 10 14MPSW42 300 0.5 40 30 0.5 20 2.0 50 10 1

Case 29–05 — TO–226AE (1–WATT TO–92) — PNP

MPSW92 300 0.5 25 30 0.5 20 2.0 50 10 1

Case 29–04 — TO–226AA (TO–92) — NPN

BF844 400 0.3 50 10 0.5 10 1.0 — — 1MPSA44 400 0.3 40 100 0.75 50 5.0 — — 12N6517 350 0.5 30 30 0.3 10 1.0 40 10 1BF393 300 0.5 40 10 0.2 20 2.0 50 10 1MPSA42 300 0.5 40 10 0.5 20 2.0 50 10 12N5551 160 0.6 80 10 0.15 10 1.0 100 10 1

Case 29–04 — TO–226AA (TO–92) — PNP

BF493S 350 0.5 40 10 20 20 2.0 50 10 12N6520 350 0.5 30 30 0.3 10 1.0 40 10 1MPSA92 300 0.5 40 10 0.5 20 2.0 50 10 12N6519 300 0.5 45 30 0.3 10 1.0 40 10 12N5401 150 0.6 60 10 0.2 10 1.0 100 10 1

Case 29–04 — TO–226AA (TO–92)

V(BR)CEO IChFE @ IC VCE(sat) @ IC & IB fT @ IC

NPN PNP

V(BR)CEOVoltsMin

ICAmpCont Min mA

VoltsMax mA mA

MHzMin mA Style

BF420 BF421 300 0.5 50 25 2.0 20 2.0 60 10 14BF422 BF423 250 0.5 50 25 2.0 20 2.0 60 10 14




Table 6. Plastic–Encapsulated RF TransistorsThe RF transistors are designed for small–signal amplification from RF to VHF/UHF frequencies. They are also used asmixers and oscillators in the same frequency ranges.

V(BR)CEO IChFE @ IC fT CRE/CRB NF

DeviceType

V(BR)CEOVoltsMin

ICmAMax Min mA

VCEV

fTMHzTyp

CRE/CRBpF

Max

NFdBTyp

fMHz Style

Case 29–04 — TO–226AA (TO–92) — NPN

BF224 30 50 30 7.0 10 600 0.28 2.5 100 21MPSH24 30 50 30 8.0 10 400(2) 0.36 — — 2MPSH20 30 100 25 4.0 10 400(2) 0.65 — — 2MPSH07A(9) 30 25 20 3.0 10 400(2) 0.3 3.2(3) 100 1MPS3866 30 400 10 50 5.0 500(2) — — — 1MPSH11 25 — 60 4.0 10 650(2) 0.9 — — 2MPSH10 25 — 60 4.0 10 650(2) 0.65 — — 2BF199 25 100 40 7.0 10 750 0.35 2.5 35 21BF959 20 100 40 20 10 600(2) 0.65 3.0 200 21MPSH17 15 — 25 5.0 10 800(2) 0.9 6.0(3) 200 2MPS918 15 50 20 8.0 10 600(2) 1.7 6.0(3) 60 1MPS5179 12 50 25 3.0 1.0 2000(3) — 5.0(3) 200 1MPS3563 12 50 20 8.0 10 800 1.7 6.0(3) 60 1MPS6595 12 50 25 10 5.0 1200(2) 1.3 — — 1

Case 29–04 — TO–266AA (TO–92) — PNP

MPSH81 20 50 60 5.0 10 600(2) 0.85 — — 2MPSH69 15 50 30 10 10 2000(2) 0.3 — — 1

Table 7. Plastic–Encapsulated High–Speed Saturated Switching Transistors

ton & toff @ IC V(BR)CEOhFE @ IC VCE(sat) @ IC & IB fT @ IC

DeviceType

nsMax

nsMax mA

V(BR)CEOVoltsMin Min mA

VoltsMax mA mA

MHzMin mA Style

Case 29–04 — TO–226AA (TO–92) — NPN

2N4264 25 35 10 15 40 10 0.22 10 1.0 300 10 12N4265 25 35 10 12 100 10 0.22 10 1.0 300 10 1MPS3646 18 28 300 15 30 30 0.2 30 3.0 350 30 1MPS2369A 12 18 10 15 40 10 0.2 10 1.0 — — 1

Case 29–04 — TO–226AA (TO–92) — PNP

MPS4258 15 20 10 12 30 50 0.15 10 1.0 700 10 1(2) Min(3) Max(9) AGC Capable




Table 8. Plastic–Encapsulated Choppers

Devices are listed in decreasing V(BR)EBO.

V(BR)EBO IChFE @ IC VCE(sat) @ IC & IB fT @ IC

DeviceType

V(BR)EBOVoltsMin

ICAmp (1)

Max Min mAVoltsMax mA mA

MHzMin mA Style

Case 29–04 — TO–226AA (TO–92) — NPN

MPSA17 15 100 200 5.0 0.25 10 1.0 80 5.0 1

MPSA16 12 100 200 5.0 0.25 10 1.0 100 5.0 1

Case 29–04 — TO–266AA (TO–92) — PNP

MPS404A –25 –150 30 –12 –0.2 –24 1.0 — — 1

Table 9. Plastic–Encapsulated Telecom TransistorsThese devices are special product ranges intended for use in telecom applications.

PD mW IChFE @ IC @ VCE fT

DeviceType

V(BR)CEOVolts

PD mW25°CAmb

ICmA

Cont Min Max mA VoltsMHzMin Style

Case 29–04 — TO–226AA (TO–92) — NPN

P2N2222A 40 625 600 75 — 10 10 300 17PBF259,S(10) 300 625 500 25 — 1.0 10 40 1

Case 29–04 — TO–226AA (TO–92) — PNP

P2N2907A 60 625 600 100 — 10 10 200 17PBF493,S(11) 300 625 500 40 — 1.0 10 40 1

(1) Typical(10) “S” version, hFE Min 60 @ IC = 20 mA, VCE = 10 V.(11) “S” version, hFE Min 40 @ IC = 0.1 mA, VCE = 1.0 V.


CASE 646–06(TO–116)

CASE 751B–05SO–16

14

1

161

STYLE 4

STYLE 1


Plastic–EncapsulatedMultiple Transistors

The manufacturing trend has been toward printed circuitboard design with requirements for smaller packages withmore functions. In the case of discrete components the use ofthe multiple device package helps to reduce board spacerequirements and assembly costs.

Many of the most popular devices are offered in thestandard plastic DIP and surface mount IC packages. Thisincludes small–signal NPN and PNP bipolar transistors,N–channel and P–channel FETs, as well as diode arrays.

Specification Tables

The following short form specifications include Quad and Dual transistors listed in alphanumeric order. Some columnsdenote two different types of data indicated by either bold or italic typeface. See key and headings for proper identification.This applies to Table 10 and 11 of this section only.

KEY

TYPE NO. ID

Ref. Point

PDWattsOneDie

Only

Subscript

VCEVolts

ICAmpMax

IChFEMin

@

Unit

fTMHzMin

CobpF

Max

hFE1

hFE2

tonns

Max

∆VBEmVMax

toffns

Max

IC

IB

NFdB

Max

@ fGpdBMin

@ & ICUnit

VCE(sat)VoltsMax

Alphanumeric listing Common–emitter Gp — Power Gaintype numbers DC Current Gain. NF — Noise Figure

f — Test FrequencyIdentification Code Units for test Current: AUD — 10–15 kHz

A — ampere Frequency Units:First Letter: Polarity m — mA H— HertzM— MHzC — both types in multiple device u — µA K — kHz G — GHzN — NPNP — PNP VCE(sat) — Collector–EmitterSecond Letter: Use Saturation VoltageA — General Purpose Amplifier Current–Gain–Bandwidth IC — Test CurrentE — Low Noise Audio Amplifier Product Current Units: u — µAF — Low Noise RF Amplifier m — mAG — General Purpose Amplifier A — Amp

and SwitchH — Tuned RF/IF Amplifier hFE1/hFE2 — Current Gain RatioM — Differential Amplifier Continuous (DC) Collector Current VBE — Differential Base Voltage |V BE1 — VBE2|.S — High Speed Switch Differential AmplifiersD — Darlington ton — turn–on time

toff — turn–off timeRated Minimum Collector–Emitter Voltage

Power Dissipation specified at 25°C. Single Subscript letter identifies base terminationdie rating. listed below in order of preference. Output Capacitance, common–base. Shown without distinction:Ref. Point: A — Ambient Temperature SUBSCRIPT: Ccb — Collector–Base Capacitance

C — Case Temperature 0 — VCEO, open Cre — Common–Emitter Reverse Transfer Capacitance


Plastic–Encapsulated Multiple Transistors (continued)

Table 10. Plastic–Encapsulated Multiple Transistors — QuadThe following table is a listing of the most popular multiple devices available in the plastic DIP package. These devices areavailable in NPN, PNP, and NPN/PNP configurations. (See note.)

Device ID

PDWattsOneDie

OnlyVCEOVolts

ICAmpMax

IChFEMin

@fT

MHzMin

CobpF

Max

hFE1

hFE2

tonns

Max

∆VBEmVMax

toffns

Max

VCE(sat)VoltsMax

IC

IB

NFdB

MaxTyp(1)

@

@ fGpdBMin

IC

Case 646–06 — TO–116

MPQ2222A NA 0.65 40 0.5 100 150 m 200 8.0 35(1) 285(1) 0.3 10 150 mMPQ2369 NS 0.5 15 0.5 40 10 m 450 4.0 9.0(1) 15(1) 0.25 10 10 mMPQ2483 NA 0.625 40 0.05 150 1.0 m 50 3.0(1) AUDMPQ2484 NA 0.625 40 0.05 300 1.0 m 50 2.0(1) AUDMPQ2907A PA 0.65 60 0.6 100 150 m 200 8.0 45(1) 180(1) 0.4 10 150 mMPQ3467 PS 0.75 40 1.0 20 500 m 125 25 40 90 0.5 10 500 mMPQ3725 NS 1.0 40 1.0 25 500 m 250 10 35 60 0.45 10 500 mMPQ3762 PS 0.75 40 1.5 35 150 m 150 15 50 120 0.55 10 500 mMPQ3798 PA 0.625 40 0.05 150 0.1 m 60 4.0 3.0(1) AUDMPQ3799 PA 0.625 60 0.05 300 0.1 m 60 4.0 2.0(1) AUDMPQ3904 NG 0.5 40 0.2 75 10 m 250 4.0 37(1) 136(1) 0.2 10 10 mMPQ3906 PG 0.5 40 0.2 75 10 m 200 4.5 43(1) 155(1) 0.25 10 10 mMPQ6001 CG 0.65 30 0.5 40 150 m 200 8.0 30(1) 225(1) 0.4 10 150 mMPQ6002 CG 0.65 30 0.5 100 150 m 200 8.0 30(1) 225(1) 0.4 10 150 mMPQ6100A CA 0.5 45 0.05 150 1.0 m 50 4.0 4.0(1) AUDMPQ6426 ND 0.5 30 0.5 10K 100 m 125 8.0 — — 1.5 10 100 mMPQ6501 CG 0.65 30 0.5 40 150 m 200 8.0 30(1) 225(1) 0.4 10 150 mMPQ6502 CG 0.65 30 0.5 100 150 m 200 8.0 30(1) 225(1) 0.4 10 150 mMPQ6600A1 CA 0.5 45 0.05 150 1.0 m 50 4.0 0.8 20 0.25 10 1.0 mMPQ6700 CA 0.5 40 0.2 70 10 m 200 4.5 0.25 10 1.0 mMPQ6842 CA 0.75 40 0.5 70 10 m 300 4.5 45 150 0.15 10 0.5 mMPQ7043 NA 0.75 250 0.5 25 1.0 m 50 5.0 0.5 10 20 mMPQ7042 NA 0.75 200 0.5 25 1.0 m 50 5.0 0.5 10 20 mMPQ7051 CG 0.75 150 0.5 25 1.0 m 50 6.0 0.7 10 20 mMPQ7093 PA 0.75 250 0.5 25 1.0 m 50 5.0 0.5 10 20 m

Table 11. Plastic–Encapsulated Multiple Transistors — Quad Surface MountThe following table is a listing of the most popular multiple devices available in the plastic SOIC surface mount package.These devices are available in NPN, PNP, and NPN/PNP configurations.

D i V V

hFE @ IC fT @ IC

Device V(BR)CEO V(BR)CBO Min mA MHz Min mA

Case 751B–05 — SO–16

MMPQ2222A 40 75 40 500 200 20MMPQ2369 15 40 20 100 450 10MMPQ2907A 50 60 50 500 200 50MMPQ3467 40 40 20 500 125 50MMPQ3725 40 60 25 500 250 50MMPQ3799 60 60 300 0.5 60 1.0MMPQ3904 40 60 75 10 250 10MMPQ3906 40 40 75 10 200 10MMPQ6700 (12) 40 40 70 10 200 10

(1) Typical(12) NPN/PNPNOTE: Some columns show 2 different types of data indicated by either bold or italic typefaces. See key and headings.



Plastic–EncapsulatedSurface Mount TransistorsThis section of the selector guide lists the small–signal plasticdevices that are available for surface mount applications.These devices are encapsulated with the lateststate–of–the–art mold compounds that enhance reliability andexhibit excellent performance in high temperature and highhumidity environments. This package offers higher powerdissipation capability for small–signal applications.

Table 12. Plastic–Encapsulated Surface Mount General–Purpose Transistors

The following tables are a listing of small–signal general–purpose transistors in the SOT–23, SC–59, SOT–223, SC–70,SC–90, and SOT–363 surface mount packages. These devices are intended for small–signal amplification for DC, audio,and lower RF frequencies. They also have applications as oscillators and general–purpose, low voltage switches.Pinout: 1–Base, 2–Emitter, 3–CollectorDevices are listed in order of descending breakdown voltage.

D i M ki V

hFE @ IC fTDevice Marking V(BR)CEO Min Max mA

TMHz Min

Case 318–08 — TO–236AB (SOT–23) — NPN

BC846ALT1 1A 65 110 220 2.0 100BC846BLT1 1B 65 200 450 2.0 100BC817–16LT1 6A 45 100 250 100 200BC817–25LT1 6B 45 160 400 100 200BC817–40LT1 6C 45 250 600 100 200BC847ALT1 1E 45 110 220 2.0 100BC847BLT1 1F 45 200 450 2.0 100BC847CLT1 1G 45 420 800 2.0 100MMBT2222ALT1 1P 40 100 300 150 200MMBT3904LT1 1AM 40 100 300 10 200MMBT4401LT1 2X 40 100 300 150 250BC848ALT1 1J 30 110 220 2.0 100BC848BLT1 1K 30 200 450 2.0 100BC848CLT1 1L 30 420 800 2.0 100

Case 318–08 — TO–236AB (SOT–23) — PNP

MMBT8599LT1 2W 80 100 300 1.0 150BC856ALT1 3A 65 125 250 2.0 100BC856BLT1 3B 65 220 475 2.0 100MMBT2907ALT1 2F 60 100 300 150 200BC807–16LT1 5A 45 100 250 100 200BC807–25LT1 5B 45 160 400 100 200BC807–40LT1 5C 45 250 600 100 200BC857ALT1 3E 45 125 250 2.0 100BC857BLT1 3F 45 220 475 2.0 100MMBT3906LT1 2A 40 100 300 10 250MMBT4403LT1 2T 40 100 300 150 200BC858ALT1 3J 30 125 250 2.0 100BC858BLT1 3K 30 220 475 2.0 100BC858CLT1 3L 30 420 800 2.0 100


CASE 318–08TO–236AB

SOT–23

CASE 318D–04SC–59

CASE 318E–04SOT–223

1

2

3 4

12

3

12

3

CASE 419–02SC–70/SOT–323

3

12

12

3

45

6

CASE 419B–01SOT–363

3

12

CASE 463–01SOT–416/SC–90


Plastic–Encapsulated Surface Mount Transistors (continued)

Table 12. Plastic–Encapsulated Surface Mount General–Purpose Transistors (continued)Pinout: 1–Base, 2–Emitter, 3–CollectorDevices are listed in order of descending breakdown voltage.

D i M ki V


fTMHz Min

Case 318D–04 — SC–59 — NPN

MSD601–RT1 YR 25 210 340 2.0 150(1)

MSD601–ST1 YS 25 290 460 2.0 150(1)

MSD602–RT1 WR 25 120 240 150 200(1)

MSD1328–RT1 1DR 20 200 350 500 200(1)

Case 318D–04 — SC–59 — PNP

MSB709–RT1 AR 25 210 340 2.0 100(1)

MSB709–ST1 AS 25 290 460 2.0 100(1)

MSB710–QT1 CQ 25 85 170 150 200(1)

MSB710–RT1 CR 25 120 240 150 200(1)

Case 419–02 — SC–70/SOT–323 —NPN

BC818WT1 6I 45 100 600 100 —BC818–25WT1 6F 45 160 400 100 —BC818–40WT1 6G 45 250 600 100 —BC846AWT1 1A 65 110 220 2.0 100BC846BWT1 1B 65 200 450 2.0 100BC847AWT1 1E 45 110 220 2.0 100BC847BWT1 1F 45 200 450 2.0 100BC847CWT1 1G 45 420 800 2.0 100BC848AWT1 1J 30 110 220 2.0 100BC848BWT1 1K 30 200 450 2.0 100BC848CWT1 1L 30 420 800 2.0 100MMBT2222AWT1 1P 40 100 300 150 300MMBT3904WT1 AM 40 100 300 10 300MSC3930–BT1 VB 20 70 140 1.0 150MSD1819A–RT1 ZR 50 210 340 2.0 —

Case 419–02 — SC–70/SOT–323 —PNP

BC808–25WT1 5F 45 160 400 100 —BC808–40WT1 6F 45 250 600 100 —BC856AWT1 3A 65 125 250 2.0 100BC856BWT1 3B 65 220 475 2.0 100BC857AWT1 3E 45 125 250 2.0 100BC857BWT1 3F 45 220 475 2.0 100BC858AWT1 3J 30 110 220 2.0 100BC858BWT1 3K 30 200 450 2.0 100BC858CWT1 3L 30 420 800 2.0 100MMBT2907AWT1 20 60 100 300 150 200MMBT3906WT1 2A 40 100 300 10 250MSB1218A–RT1 BR 45 210 340 2.0 —

Case 419B–01 — SOT–363 — Dual NPN

MBT3904DW1T1 MA 40 100 300 10 300MBT3904DW9T1 MB 40 100 300 10 300

Case 419B–01 — SOT–363 — Dual PNP

MBT3906DW1T1 A2 –40 100 300 10 250MBT3906DW9T1 A3 –40 100 300 10 250(1) Typical




Table 12. Plastic–Encapsulated Surface Mount General–Purpose Transistors (continued)Pinout: 1–Base, 2–Emitter, 3–CollectorDevices are listed in order of descending breakdown voltage.

D i M ki V


fTMHz Min

Case 419B–01 — SOT–363 — Dual Combination NPN and PNP

MBT3946DW1T1 46 40 100 300 10 250

Case 463–01 — SOT–416/SC–90 — NPN

2SC4617 B9 50 120 560 1.0 180

Case 463–01 — SOT–416/SC–90 — PNP

2SA1774 F9 50 120 560 1.0 140

Table 13. Plastic–Encapsulated Surface Mount Bias Resistor Transistors Table 13. for General Purpose Applications

Pinout: 1–Base, 2–Emitter, 3–Collector

These devices include bias resistors on the semiconductor chip with the transistor. See the BRT diagram for orientationof resistors.

Device Marking V(BR)CEOVolts

hFE@ IC ICmA R1 R2

NPN PNP NPN PNPVolts(Min) Min mA

mAMax

R1Ohm

R2Ohm

Case 318D–04 — SC–59

MUN2211T1 MUN2111T1 8A 6A 50 35 5.0 100 10K 10KMUN2212T1 MUN2112T1 8B 6B 50 60 5.0 100 22K 22KMUN2213T1 MUN2113T1 8C 6C 50 80 5.0 100 47K 47KMUN2214T1 MUN2114T1 8D 6D 50 80 5.0 100 10K 47KMUN2215T1 MUN2115T1 8E 6E 50 160 5.0 100 10K ∞MUN2216T1 MUN2116T1 8F 6F 50 160 5.0 100 4.7K ∞MUN2230T1 MUN2130T1 8G 6G 50 3.0 5.0 100 1.0K 1.0KMUN2231T1 MUN2131T1 8H 6H 50 8.0 5.0 100 2.2K 2.2KMUN2232T1 MUN2132T1 8J 6J 50 15 5.0 100 4.7K 4.7KMUN2233T1 MUN2133T1 8K 6K 50 80 5.0 100 4.7K 47KMUN2234T1 MUN2134T1 8L 6L 50 80 5.0 100 22K 47K

Case 318–08 — TO–236AB (SOT–23)

MMUN2211LT1 MMUN2111LT1 A8A A6A 50 35 5.0 100 10K 10KMMUN2212LT1 MMUN2112LT1 A8B A6B 50 60 5.0 100 22K 22KMMUN2213LT1 MMUN2113LT1 A8C A6C 50 80 5.0 100 47K 47KMMUN2214LT1 MMUN2114LT1 A8D A6D 50 80 5.0 100 10K 47KMMUN2215LT1 MMUN2115LT1 A8E A6E 50 160 5.0 100 10K ∞MMUN2216LT1 MMUN2116LT1 A8F A6F 50 160 5.0 100 4.7K ∞MMUN2230LT1 MMUN2130LT1 A8G A6G 50 3.0 5.0 100 1.0K 1.0KMMUN2231LT1 MMUN2131LT1 A8H A6H 50 8.0 5.0 100 2.2K 2.2KMMUN2232LT1 MMUN2132LT1 A8J A6J 50 15 5.0 100 4.7K 4.7KMMUN2233LT1 MMUN2133LT1 A8K A6K 50 80 5.0 100 4.7K 47KMMUN2234LT1 MMUN2134LT1 A8L A6L 50 80 5.0 100 22K 47K


C(OUT)

E(GND)

B(IN)

R1

R2



Table 13. Plastic–Encapsulated Surface Mount Bias Resistor Transistorsfor General Purpose Applications (continued)



hFE@ IC ICmA R1 R2


mAMax

R1Ohm

R2Ohm

Case 419–02 — SC–70/SOT–323

MUN5211T1 MUN5111T1 8A 6A 50 35 5.0 50 10K 10KMUN5212T1 MUN5112T1 8B 6B 50 60 5.0 50 22K 22KMUN5213T1 MUN5113T1 8C 6C 50 80 5.0 50 47K 47KMUN5214T1 MUN5114T1 8D 6D 50 80 5.0 50 10K 47KMUN5215T1 MUN5115T1 8E 6E 50 160 5.0 50 10K ∞MUN5216T1 MUN5116T1 8F 6F 50 160 5.0 50 4.7K ∞MUN5230T1 MUN5130T1 8G 6G 50 3.0 5.0 50 1.0K 1.0KMUN5231T1 MUN5131T1 8H 6H 50 8.0 5.0 50 2.2K 2.2KMUN5232T1 MUN5132T1 8J 6J 50 15 5.0 50 4.7K 4.7KMUN5233T1 MUN5133T1 8K 6K 50 80 5.0 50 4.7K 47KMUN5234T1 MUN5134T1 8L 6L 50 80 5.0 50 22K 47K

Case 419B–01 — SOT–363 Duals

MUN5211DW1T1 MUN5111DW1T1 7A 8A 50 35 5.0 100 10K 10KMUN5212DW1T1 MUN5112DW1T1 7B 8B 50 60 5.0 100 22K 22KMUN5213DW1T1 MUN5113DW1T1 7C 8C 50 80 5.0 100 47K 47KMUN5214DW1T1 MUN5114DW1T1 7D 8D 50 80 5.0 100 10K 47KMUN5215DW1T1 MUN5115DW1T1 7E 8E 50 160 5.0 100 10K ∞MUN5216DW1T1 MUN5116DW1T1 7F 8F 50 160 5.0 100 4.7K ∞MUN5230DW1T1 MUN5130DW1T1 7G 8G 50 3.0 5.0 100 1.0K 1.0KMUN5231DW1T1 MUN5131DW1T1 7H 8H 50 8.0 5.0 100 2.2K 2.2KMUN5232DW1T1 MUN5132DW1T1 7J 8J 50 15 5.0 100 4.7K 4.7KMUN5233DW1T1 MUN5133DW1T1 7K 8K 50 80 5.0 100 4.7K 47KMUN5234DW1T1 MUN5134DW1T1 7L 8L 50 80 5.0 100 22K 47KMUN5235DW1T1 MUN5135DW1T1 7M 8M 50 80 5.0 100 2.2K 47K

D i M ki V

hFE @ IC ICmA R1 R2

Device Marking V(BR)CEO Min mAmAMax

R1Ohm

R2Ohm

Case 419B–01 — SOT–363 — Dual Combination NPN and PNP

MUN5311DW1T1 11 50 35 5.0 100 10K 10KMUN5312DW1T1 12 50 60 5.0 100 22K 22KMUN5313DW1T1 13 50 80 5.0 100 47K 47KMUN5314DW1T1 14 50 80 5.0 100 10K 47KMUN5315DW1T1 15 50 160 5.0 100 10K ∞MUN5316DW1T1 16 50 160 5.0 100 4.7K ∞MUN5330DW1T1 3X 50 3.0 5.0 100 1.0K 1.0KMUN5331DW1T1 31 50 8.0 5.0 100 2.2K 2.2KMUN5332DW1T1 32 50 15 5.0 100 4.7K 4.7KMUN5333DW1T1 33 50 80 5.0 100 4.7K 47KMUN5334DW1T1 34 50 80 5.0 100 22K 47KMUN5335DW1T1 35 50 80 5.0 100 2.2K 47K


hFE@ IC ICmA R1 R2


mAMax

R1Ohm

R2Ohm

Case 463–01 — SOT–416/SC–90

DTC114TE — 94 — 50 100 1.0 100 10K ∞DTC114YE DTA114YE 69 59 50 80 5.0 100 10K 47K

— DTA143EE — 43 50 15 5.0 100 4.7K 4.7K




Table 14. Plastic–Encapsulated Surface Mount Switching Transistors

The following tables are a listing of devices intended for high–speed, low saturation voltage, switching applications. Thesedevices have very fast switching times and low output capacitance for optimized switching performance.Pinout: 1–Base, 2–Emitter, 3–Collector

D i M ki

Switching Time (ns) hFE@ IC fTDevice Marking ton toff V(BR)CEO Min Max mA

fTMHz Min

Case 318–08 — TO–236AB (SOT–23) — NPN

MMBT2369LT1 M1J 12 18 15 20 — 100 —MMBT2369ALT1 1JA 12 18 15 20 — 100 —BSV52LT1 B2 12 18 12 40 120 10 400

Case 318–08 — TO–236AB (SOT–23) — PNP

MMBT3640LT1 2J 25 35 12 20 — 50 500

Pinout: 1–Emitter, 2–Base, 3–CollectorCase 318D–04 — SC–59 — NPN

MSC1621T1 RB 20 40 20 40 180 1.0 200

Table 15. Plastic–Encapsulated Surface Mount VHF/UHF Amplifiers, Mixers, OscillatorsThe following table is a listing of devices intended for small–signal RF amplifier applications to VHF/UHF frequencies. Thesedevices may also be used as VHF/UHF oscillators and mixers.


D i M kiCcb(13) fT @ IC

Device Marking V(BR)CEO

Ccb(13)

pF Max GHz Min mA

Case 318–08 — TO–236AB (SOT–23) — NPN

MMBTH10LT1 3EM 25 0.7 0.65 4.0MMBT918LT1 M3B 15 1.7(14) 0.6 4.0MMBTH24LT1 M3A 30 0.45 0.4 8.0

Case 318–08 — TO–236AB (SOT–23) — PNP

MMBTH81LT1 3D 20 0.85 0.6 5.0MMBTH69LT1 M3J 15 0.35(13) 2.0 10

Pinout: 1–Emitter, 2–Base, 3–CollectorCase 318D–04 — SC–59 — NPN

MSC2295–BT1 VB 20 1.5(13) 0.15 1.0MSC2295–CT1 VC 20 1.5(13) 0.15 1.0MSC2404–CT1 UC 20 1.0(13) 0.45 1.0MSC3130T1 1S 10 — 1.4 5.0

Case 318D–04 — SC–59 — PNP

MSA1022–BT1 EB 20 2.0(13) 0.15 1.0MSA1022–CT1 EC 20 2.0(13) 0.15 1.0

Case 419–02 — SC–70/SOT–323 — PNP

MSB81T1 J3D 20 0.85(13) 0.6 5.0(13) Cre(14) Cob




Table 16. Plastic–Encapsulated Surface Mount ChoppersThe following table is a listing of small–signal devices intended for chopper applications where a higher than normalV(BR)CEO is required in the circuit application.Pinout: 1–Base, 2–Emitter, 3–Collector

D i M ki V

hFE @ IC

Device Marking V(BR)CEO V(BR)EBO Min Max mA

Case 318–08 — TO–236AB (SOT–23) — PNP

MMBT404ALT1 2N 35 25 30 400 12

Table 17. Plastic–Encapsulated Surface Mount DarlingtonsThe following table is a listing of small–signal devices that have very high hFE and input impedance characteristics. Thesedevices utilize monolithic, cascade transistor construction.Pinout: 1–Base, 2–Emitter, 3–CollectorDevices are listed in order of descending hFE.

D i M ki V

VCE(sat) hFE @ IC

Device Marking V(BR)CES

CE(sat)Volts Max Min Max mA

Case 318–08 — TO–236AB (SOT–23) — NPN

MMBTA14LT1 1N 30 1.5 20K — 100MMBTA13LT1 1M 30 1.5 10K — 100

Case 318–08 — TO–236AB (SOT–23) — PNP

MMBTA64LT1 2V 30 1.5 20K — 100

Table 18. Plastic–Encapsulated Surface Mount Low–Noise TransistorsThe following table is a listing of small–signal devices intended for low noise applications in the audio range. These devicesexhibit good linearity and are candidates for hi–fi and instrumentation equipment.Pinout: 1–Base, 2–Emitter, 3–CollectorDevices are listed in order of ascending NF.

D i M kiNF

hFE@ IC fTDevice Marking

NFdB Typ V(BR)CEO Min Max mA

fTMHz Min

Case 318–08 — TO–236AB (SOT–23) — NPN

MMBT5089LT1 1R 2.0(15) 25 400 — 10 50MMBT2484LT1 1U 3.0(15) 60 — 800 10 —MMBT6428LT1 1KM 3.0 50 250 — 10 100MMBT6429LT1 1L 3.0 45 500 — 10 100

Case 318–08 — TO–236AB (SOT–23) — PNP

MMBT5087LT1 2Q 2.0(15) 50 250 — 10 40

(15) Max




Table 19. Plastic–Encapsulated Surface Mount High–Voltage TransistorsThe following table is a listing of small–signal high–voltage devices designed for direct line operation requiring high voltagebreakdown and relatively low current capability.Pinout: 1–Base, 2–Emitter, 3–CollectorDevices are listed in order of descending breakdown voltage.

D i M ki

hFE@ IC fTDevice Marking V(BR)CEO Min Max mA

fTMHz Min

Case 318–08 — TO–236AB (SOT–23) — NPN

MMBT6517LT1 1Z 350 15 — 100 40MMBTA42LT1 1D 300 40 — 30 50MMBT5551LT1 G1 160 30 — 50 100

Case 318–08 — TO–236AB (SOT–23) — PNP

MMBT6520LT1 2Z 350 15 — 100 40MMBTA92LT1 2D 300 25 — 30 50MMBT5401LT1 2L 150 50 — 50 100

Table 20. Plastic–Encapsulated Surface Mount DriversThe following is a listing of small–signal devices intended for medium voltage driver applications at fairly high current levels.Pinout: 1–Base, 2–Emitter, 3–Collector

D i M ki V V

hFE@ IC

Device Marking V(BR)CEO VCE(sat) VBE(sat) Min Max mA

Case 318–08 — TO–236AB (SOT–23) — NPN

MMBTA06LT1 1GM 80 0.25 — 100 — 100BSS64LT1 AM 80 0.15 — 20 — 10

Case 318–08 — TO–236AB (SOT–23) — PNP

BSS63LT1 T1 100 –0.25 –0.90 30 — 25MMBTA56LT1 2GM 80 –0.25 — 100 — 100

The following devices are designed to conserve energy. They offer ultra–low collector saturation voltage.

Case 318–08 — TO–236AB (SOT–23) — PNP

MMBT1010LT1 GLP 15 0.1 1.1 300 600 100

Case 318–03 — SC–59 — PNP

MSD1010T1 GLP 15 0.1 1.1 300 600 100

Table 21. Plastic–Encapsulated Surface Mount General Purpose AmplifiersPinout: 1–Base, 2–Collector, 3–Emitter, 4–Collector

D i M ki

hFE@ IC

Device Marking V(BR)CEO Min Max mA

Case 318E–04 — SOT–223 — NPN

BCP56T1 BH 80 40 250 150

Case 318E–04 — SOT–223 — PNPPinout: 1–Gate, 2–Drain, 3–Source, 4–Drain

BCP53T1 AH 80 40 25 150




Table 22. Plastic–Encapsulated Surface Mount Switching TransistorsPinout: 1–Base, 2–Collector, 3–Emitter, 4–Collector

M ki

hFE fT

Device Marking ton toff V(BR)CEO Min Max @ IC (mA) Min (MHz)

Case 318E–04 — SOT–223 — NPN

PZT2222AT1 P1F 35 285 40 100 300 20 300

Case 318E–04 — SOT–223 — PNP

PZT2907AT1 P2F 45 100 60 100 300 50 200

Table 23. Plastic–Encapsulated Surface Mount DarlingtonsPinout: 1–Base, 2–Collector, 3–Emitter, 4–Collector

M kiVCE(sat)

hFE

@ I ( A)Device Marking V(BR)CER

VCE(sat)Max (V) Min Max @ IC (mA)

Case 318E–04 — SOT–223 — NPN

BSP52T1 AS3 80 1.3 2000 — 500PZTA14T1 P1N 30 1.5 20k — 100

Case 318E–04 — SOT–223 — PNP

BSP62T1 BS3 90 1.3 2000 — 500PZTA64T1 P2V 30 1.5 20k — 100

Table 24. Plastic–Encapsulated Surface Mount High–Voltage TransistorsPinout: 1–Base, 2–Collector, 3–Emitter, 4–Collector

M ki

hFE fT

Device Marking V(BR)CEO Min Max @ IC (mA) Min (MHz)

Case 318E–04 — SOT–223 — NPN

BSP19AT1 SP19A 350 40 — 20 70PZTA42T1 P1D 300 40 — 10 50BF720T1 BF720 250 50 — 10 60BSP20AT1 SP20A 250 40 — 20 70

Case 318E–04 — SOT–223 — PNP

PZTA96T1 ZTA96 450 50 150 10 50PZTA92T1 P2D 300 40 — 10 50BSP16T1 BSP16 300 30 150 10 15BF721T1 BF721 250 50 — 10 60

Table 25. Plastic–Encapsulated Surface Mount High Current TransistorsPinout: 1–Base, 2–Collector, 3–Emitter, 4–Collector

D i M kiVCE(sat)

hFE@ IC

Device Marking V(BR)CEO

VCE(sat)Volts Min Max mA

Case 318E–04 — SOT–223 — NPN

PZT651T1 651 60 0.5 75 — 1000BCP68T1 CA 20 0.5 60 — 1000

Case 318E–04 — SOT–223 — PNP

PZT751T1 ZT751 60 0.5 75 — 1000BCP69T1 CE 20 0.5 60 — 1000



Metal–CanTransistorsMetal–can packages are intended for use in industrialapplications where harsh environmental conditions areencountered. These packages enhance reliability of the endproducts due to their resistance to varying humidity andextreme temperature ranges.

Table 26. Metal–Can General–Purpose TransistorsThese transistors are designed for DC to VHF amplifier applications, general–purpose switching applications, andcomplementary circuitry. Devices are listed in decreasing order of V(BR)CEO within each package group.

D iV(BR)CEO

fT @ IC IChFE @ IC

DeviceType

V(BR)CEOVoltsMin

MHzMin mA

ICmAMax Min Max mA

Case 22–03 — TO–206AA (TO–18) — NPN

2N3700 80 80 50 1000 50 — 500BC107 45 150 10 200 110 450 2.0BC107B 45 150 10 200 200 450 2.02N2222A 40 300 20 800 100 300 150BC109C 25 150 10 200 420 800 2.0

Case 22–03 — TO–206AA (TO–18) — PNP

2N2906A 60 200 50 600 40 120 1502N2907A 60 200 50 600 100 300 1502N3251A 60 300 10 200 100 300 10BC177B 45 200 10 200 180 460 2.0

Case 79–04 — TO–205AD (TO–39) — NPN

2N3019 80 100 50 1000 100 300 1502N3020 80 80 50 1000 40 120 1502N1893 80 50 50 500 40 120 1502N2219A 40 300 20 800 100 300 150

Case 79–04 — TO–205AD (TO–39) — PNP

2N4033 80 — — 1000 25 — 10002N4036 65 60 50 1000 40 140 1502N2904A 60 200 50 600 40 120 1502N2905A 60 200 50 600 100 300 1502N4032 60 — — 1000 40 — 1000



(TO–18) CASE 79–04TO–205AD

(TO–39)

3 21

32 1STYLE 1

STYLE 1


Metal–Can Transistors (continued)

Table 27. Metal–Can High–Gain/Low–Noise TransistorsThese transistors are characterized for high–gain and low–noise applications. Devices are listed in decreasing order of NF.

D i

NFWideband V(BR)CEO IC

hFE @ IC fT @ IC

DeviceType

WidebanddB

Typ Max

V(BR)CEOVoltsMin

ICmAMax Min Max

µAmA

MHzMin mA

Case 22–03 — TO–206AA (TO–18) — NPN

2N2484 8.0(1) 60 50 100 500 10 15 0.052N930A 3.0 45 30 — 600 10 45 0.52N930 3.0 45 30 — 600 10 30 0.5

Case 22–03 — TO–206AA (TO–18) — PNP

2N3964 4.0 45 200 250 600 1.0(24) 50 0.52N3799 2.5 60 50 300 900 500 30 0.5

Table 28. Metal–Can High–Voltage/High–Current TransistorsThe following table lists Motorola standard devices that have high collector–emitter breakdown voltage. Devices are listed indecreasing order of V(BR)CEO within each package type.

D iV(BR)CEO IC

hFE @ IC VCE(sat) @ IC & IB fT @ IC

DeviceType

V(BR)CEOVoltsMin

ICmAMax Min mA

VoltsMax mA mA

MHzMin mA

Case 22–03 — TO–206AA (TO–18) — NPN

2N6431 300 50 50 30 0.5 20 2.0 50 10BSS73 300 500 40 30 1.0 50 5.0 50 20

Case 22–03 — TO–206AA (TO–18) — PNP

BSS76 300 500 35 30 0.5 50 5.0 50 20

Case 79–04 — TO–205AD (TO–39) — PNP

2N3637 175 1000 100 50 0.5 50 5.0 200 30

(1) Typical(24) TA = 25°C

Table 29. Metal–Can Switching TransistorsThe following devices are intended for use in general–purpose switching and amplifier applications. Within each packagegroup shown, the devices are listed in order of decreasing turn–on time (ton).

D i

ton & toff @ IC V(BR)CEO IChFE @ IC VCE(sat) @ IC @ IB fT

IDeviceType

nsMax

nsMax mA

V(BR)CEOVoltsMin

ICmAMax Min mA

VoltsMax mA mA

fTMHzMin

ICmA

Case 22–03 — TO–206AA (TO–18) — NPN

2N2369A 12 18 10 15 200 40 10 0.2 10 1.0 500 10BSX20 7.0 21 100 15 500 20 10 0.25 10 1.0 500 10

Case 79–04 — TO–205AD (TO–39) — PNP

2N3467 40 90 500 40 1000 40 500 0.5 500 50 175 50



Field–Effect Transistors

JFETsJFETs operate in the depletion mode. They are available inboth P– and N–channel and are offered in both Through–holeand Surface Mount packages. Applications include general–purpose amplifiers, switches and choppers, and RF amplifiersand mixers. These devices are economical and veryrugged. The drain and source are interchangeable on manytypical FETs.

Table 30. JFET Low–Frequency/Low–NoiseThe following table is a listing of small–signal JFETs intended for low–noise applications in the audio range. These devicesexhibit good linearity and are candidates for hi–fi and instrumentation equipment.

D i

Re Yfs @ f Re Yos @ fCiss Crss

V(BR)GSSV(BR)GDO

VGS(off)Volts

IDSSmA

S lDevicemmho

Min kHzµmhoMax kHz

CisspF

Max

CrsspF

Max

V(BR)GDOVoltsMin Min Max Min Max Style

Case 29–04 — TO–226AA (TO–92) — N–Channel

J202 — — — — — — 40 0.8 4.0 0.9 4.5 52N5458 1.5 1.0 50 1.0 7.0 3.0 25 1.0 7.0 2.0 9.0 5MPF3821 1.5 1.0 10 1.0 6.0 3.0 50 — 4.0 0.5 2.5 52N5457 1.0 1.0 50 1.0 7.0 3.0 25 0.5 6.0 1.0 5.0 52N5459 2.0 1.0 50 1.0 7.0 3.0 25 2.0 8.0 4.0 16 5

Case 29–04 — TO–226AA (TO–92) — P–Channel

2N5460 1.0 1.0 75 1.0 7.0 2.0 40 0.75 6.0 1.0 5.0 72N5461 1.5 1.0 75 1.0 7.0 2.0 40 1.0 7.5 2.0 9.0 72N5462 2.0 1.0 75 1.0 7.0 2.0 40 1.8 9.0 4.0 16 7

Table 31. JFET High–Frequency AmplifiersThe following is a listing of small–signal JFETs that are intended for hi–frequency applications. These are candidates forVHF/UHF oscillators, mixers and front–end amplifiers.

D i

Re Yfs @ f Re Yos @ fCiss Crss

NF @ RG = 1K V(BR)GSSV(BR)GDO

VGS(off)Volts

IDSSmA

S lDevicemmho

Min MHzµmhoMax MHz

CisspF

Max

CrsspF

MaxdB

Maxf

MHz

V(BR)GDOVoltsMin Min Max Min Max Style


MPF102 1.6 100 200 100 7.0 3.0 — — 25 — 8.0 2.0 20 52N5668 1.0 100 50 100 7.0 3.0 2.5 100 25 0.2 4.0 1.0 5.0 52N5484 2.5 100 75 100 5.0 1.0 3.0 100 25 0.3 3.0 1.0 5.0 52N5485 3.0 400 100 400 5.0 1.0 4.0 400 25 0.5 4.0 4.0 10 52N5486 3.5 400 100 400 5.0 1.0 4.0 400 25 2.0 6.0 8.0 20 5J308 12(1) 100 250(1) 100 7.5 2.5 1.5(1) 100 25 1.0 6.5 12 60 5J309 12(1) 100 250(1) 100 7.5 2.5 1.5(1) 100 25 1.0 4.0 12 30 5J310 12(1) 100 250(1) 100 7.5 2.5 1.5(1) 100 25 2.0 6.5 24 60 5

(1) Typical



(TO–92)12 3


JFETs (continued)

Table 32. JFET Switches and ChoppersThe following is a listing of JFETs intended for switching and chopper applications.

D i

RDS(on) @ ID

VGS(off)Volts

IDSSmA V(BR)GSS

V(BR)GDO Ciss Crss ton toff

S lDeviceΩ

Max mA Min Max Min Max

V(BR)GDOVoltsMin

CisspF

Max

CrsspF

Max

tonns

Max

toffns

Max Style


MPF4856 25 — 4.0 10 50 — 40 18 8.0 9.0 25 5MPF4859 25 — 4.0 10 50 — 30 18 8.0 9.0 25 5J111 30 — 3.0 10 20 — 35 28 5.0 — — 5MPF4857 40 — 2.0 6.0 20 100 40 18 8.0 10 50 5MPF4860 40 — 2.0 6.0 20 100 30 18 8.0 10 50 5J112 50 — 1.0 5.0 5.0 — 35 28 5.0 — — 5MPF4392 60 — — — 25 75 30 10 3.5 15 35 52N5639 60 1.0 — (8.0)(1) 25 — 30 10 4.0 — — 5MPF4861 60 — 0.8 4.0 8.0 80 30 18 8.0 20 100 5MPF4393 100 — — (12)(1) 5.0 30 30 10 3.5 15 55 52N5640 100 1.0 — (6.0)(1) 5.0 — 30 10 4.0 18 45 5J113 100 — 0.5 3.0 2.0 — 35 28 5.0 — — 52N5555 150 — — 1.0(16) 15 — 25 5.0 1.2 10 25 5BF246A 35(1) 1.0 0.6 14 30 80 25 — — — — 22BF246B 50(1) 1.0 0.6 14 60 140 25 — — — — 22J110 18 — 0.5 4.0 10 — 25 — — — — 5

Case 29–04 — TO–226AA (TO–92) — P–Channel

MPF970 100 1.0 5.0 12 15 100 30 12 5.0 8.0 25 5MPF971 250 1.0 1.0 7.0 2.0 50 30 12 5.0 10 120 5

(1) Typical(16) VGS(f)



Table 33. TMOS Switches and ChoppersThe following is a listing of small–signal TMOS devices that are intended for switching and chopper applications. Thesedevices offer low RDS(on) characteristics.

D i

RDS(on) @ ID

VGS(th)Volts

V(BR)DSS Ciss Crss ton toff

S lDeviceΩ

Max A Min Max

V(BR)DSSVoltsMin

CisspF

Max

CrsspF

Max

tonns

Max

toffns

Max Style

Case 29–05 — TO–226AE (1–WATT TO–92) — N–Channel

MPF930 1.4 1.0 1.0 3.5 35 70(1) 20(1) 15 15 22MPF960 1.7 1.0 1.0 3.5 60 70(1) 20(1) 15 15 22MPF6659 1.8 1.0 0.8 2.0 35 30(1) 4(1) 5.0 5.0 22MPF990 2.0 1.0 1.0 3.5 90 70(1) 20(1) 15 15 22MPF6660 3.0 1.0 0.8 2.0 60 30(1) 4(1) 5.0 5.0 22MPF6661 4.0 1.0 0.8 2.0 90 30(1) 4(1) 5.0 5.0 22MPF910 5.0 0.5 0.3 2.5 60 — — — — 22VN10LM 5.0 0.5 0.8 2.5 60 60 5.0 10 10 22


VN0300L 1.2 1.0 0.8 2.5 60 100 25 30 30 222N7000 5.0 0.5 0.8 3.0 60 60 5.0 10 10 22BS170 5.0 0.2 0.8 3.0 60 25(1) 3.0(1) 10 10 30VN0610LL 5.0 0.5 0.8 2.5 60 60 5.0 10 10 22VN1706L 6.0 0.5 0.8 2.0 170 125 20 8.0 18 22VN2406L 6.0 0.5 0.8 2.0 240 125 20 8.0 23 22BSS89 6.0 0.30 1.0 2.7 200 72(1) 3.0(1) 6.0(1) 12(1) 7BS107A 6.4 0.25 1.0 3.0 200 60(1) 6.0(1) 15 15 302N7008 7.5 0.5 1.0 2.5 60 50 5.0 20 20 22VN2222LL 7.5 0.5 0.6 2.5 60 60 5.0 10 10 22VN2410L 10 0.5 0.8 2.0 240 125 20 8.0 23 22BS107 14 0.2 1.0 3.0 200 60(1) 6.0(1) 15 15 30

(1) Typical


G

D

S

CASE 29–05TO–226AE

1–WATT (TO–92)


(TO–92)

12

3

12 3

TMOS FETs


Surface Mount FETsThis section contains the FET plastic packages available forsurface mount applications. Most of these devices are themost popular metal–can and insertion type parts carried overto the new surface mount packages.

Table 34. Surface Mount RF JFETsThe following is a list of surface mount FETs which are intended for VHF/UHF RF amplifier applications.Pinout: 1–Drain, 2–Source, 3–Gate

D i M ki

NF Yfs @ VDS

V S lDevice MarkingdBTyp

fMHz

mmhosMin

mmhosMax Volts V(BR)GSS Style

Case 318–08 — TO–236AB (SOT–23) — N–Channel

MMBFJ309LT1 6U 1.5 450 10 20 10 25 10MMBFJ310LT1 6T 1.5 450 8.0 18 10 25 10MMBFU310LT1 M6C 1.5 450 10 18 10 25 10MMBF4416LT1 M6A 2(3) 100 4.5 7.5 15 30 10MMBF5484LT1 M6B 2.0 100 3.0 6.0 15 25 10MMBF5486LT1 6H 2.0 100 4.0 8.0 15 25 10

Case 419B–01 — SOT–363— Dual N–Channel

MBF4416DW1T1 M6 2.0 100 4.5 7.5 15 30 7(3) Max

Table 35. Surface Mount General–Purpose JFETsThe following table is a listing of surface mount small–signal general purpose FETs. These devices are intended forsmall–signal amplification for DC, audio, and lower RF frequencies. They also have applications as oscillators andgeneral–purpose, low–voltage switches.Pinout: 1–Drain, 2–Source, 3–Gate

D i M ki V

Yfs @ VDS IDSS

S lDevice Marking V(BR)GSS

mmhosMin

mmhosMax Volts

mAMin

mAMax Style


MMBF5457LT1 6D 25 1.0 5.0 15 1.0 5.0 10MMBF5459LT1 6L 25 2.0 6.0 15 4.0 16 10

Case 318–08 — TO–236AB (SOT–23) — P–Channel

MMBF5460LT1 M6E 40 1.0 4.0 15 1.0 5.0 10

Case 419B–01 — SOT–363 — Dual N–Channel

MBF5457DW1T1 6D 25 1.0 5.0 15 1.0 5.0 7

(3) Max



SOT–23

CASE 318E–04SOT–223

1

2

3

12

3

4

CASE 419–02SC–70/SOT–323

12

3

45

6



Surface Mount FETs (continued)

Table 36. Surface Mount Choppers/Switches JFETsThe following is a listing of small–signal surface mount JFET devices intended for switching and chopper applications.

Pinout: 1–Drain, 2–Source, 3–Gate

D i M ki

RDS(on) toff

V

VGS(off) IDSS

S lDevice Marking

RDS(on)OhmsMax

toffns

Max V(BR)GSS

VoltsMin

VoltsMax

mAMin

mAMax Style


MMBF4856LT1 AAA 25 25 40 –4.0 –10 50 — 10MMBF4391LT1 6J 30 20 30 –4.0 –10 50 150 10MMBF4860LT1 6F 40 50 30 –2.0 –6.0 20 100 10MMBF4392LT1 6K 60 35 30 –2.0 –5.0 25 75 10MMBF4393LT1 6G 100 50 30 –0.5 –3.0 5.0 30 10

Case 318–08 — TO–236AB (SOT–23) — P–Channel

MMBFJ175LT1 6W 125 — 30 3.0 6.0 7.0 60 10MMBFJ177LT1 6Y 300 — 30 0.8 2.5 1.5 20 10

Table 37. TMOS FETsThe following is a listing of small–signal surface mount TMOS FETs which exhibit low RDS(on) characteristics.

Pinout: 1–Gate, 2–Source, 3–Drain

D i M ki

RDS(on) @ ID

V

VGS(th) Switching Time

S lDevice Marking Ohm mA VDSS

VoltsMin

VoltsMax ton ns toff ns Style


MMBF170LT1 6Z 5.0 200 60 0.8 3.0 10 10 21BSS123LT1 SA 6.0 100 100 0.8 2.8 20 40 21BSS138LT1 J1 3.5 200 50 0.5 1.5 20 20 212N7002LT1 702 7.5 500 60 1.0 2.5 20 20 21MMBF0201NLT1 N1 1.0 300 20 1.0 2.4 2.5 15 21MGSF1N02LT1 N2 0.085 1200 20 1.0 2.4 2.5 16 21MGSF1N03LT1 N3 0.09 1200 30 1.0 2.4 2.5 16 21

Case 318–08 — TO–236 (SOT–23) — P–Channel

BSS84LT1 PD 6.0 100 50 1.0 2.4 2.5 16 21MMBF0202PLT1 P3 1.4 200 20 1.0 2.0 2.5 16 21MGSF1P02LT1 PC 0.35 1500 20 1.0 2.4 2.5 16 21MGSF1P02ELT1 PE 0.16 1500 20 0.7 1.0 2.5 16 21

Pinout: 1–Gate, 2–Drain, 3–Source, 4–Drain

D i M ki

RDS(on)

V


S lDevice Marking Ohm mA VDSS

VoltsMin

VoltsMax ton ns toff ns Style

Case 318E–04— SOT–223 — N–Channel

MMFT960T1 FT960 1.7 1000 60 1.0 3.5 15 15 3MMFT6661T1 T6661 4.0 1000 90 0.8 2.0 5.0 5.0 3MMFT2406T1 T2406 10 200 240 0.8 2.0 — — 3MMFT107T1 FT107 14 200 200 1.0 3.0 15 15 3

Case 419–02 — SC–70/SOT–323 — N–Channel

MMBF2201NT1 N1 1.0 300 20 1.0 2.4 2.5 15 8

Case 419–02 — SC–70/SOT–323 — P–Channel

MMBF2202PT1 P3 2.2 200 20 1.0 2.4 2.5 16 8



Tuning and Switching DiodesTuning Diodes —Abrupt Junction

Motorola supplies voltage–variable capacitance diodes servingthe entire range of frequencies from HF through UHF. Used in RFreceivers and transmitters, they have a variety of applications,including:• Phase–locked loop tuning systems• Local oscillator tuning• Tuned RF preselectors• RF filters• RF phase shifters• RF amplifiers• Automatic frequency control• Video filters and delay lines• Harmonic generators• FM modulatorsTwo families of devices are available: Abrupt Junction and HyperAbrupt Junction. The Abrupt Junction family includes devicessuitable for virtually all tuned–circuit and narrow–range tuningapplications throughout the spectrum.

Typical CharacteristicsDiode Capacitance versus Reverse Voltage

CT,

DIO

DE

CAP

ACIT

ANC

E (p

F)

VR, REVERSE VOLTAGE (VOLTS)0.6 1 2 4 6 10 40 60

100

70

50

30

20

10

7

5

3

2

1N5148,A

1N5144,A

1N5140,A

TA = 25°Cf = 1 MHz

CT,

DIO

DE

CAP

ACIT

ANC

E (p

F)

1000

100

10

1

VR, REVERSE VOLTAGE (VOLTS)0.1 1 10 100

(See Tables 38 Thru 40)

1N5450AMV1638

1N5452AMV1642

1N5456AMV1650

1N5441AMV1620

1N5445AMV1628

CT,

DIO

DE

CAP

ACIT

ANC

E (p

F)

1000

100

10

1

VR, REVERSE VOLTAGE (VOLTS)0.1 1 10 100

CT,

DIO

DE

CAP

ACIT

ANC

E (p

F)

100

70

40

20

10

VR, REVERSE VOLTAGE (VOLTS)0.3 0.5 1 2 3 5 10 20 30

MV2101MMBV2101LT1

MV2105MMBV2105LT1

MV2115

MV104GMMBV432LT1

MV104

TA = 25°Cf = 1 MHzEACH DIODE

(See Tables 41 and 42) (See Table 43)

20

MV2109MMBV2109LT1


(TO–92)

12 3

1

2

3

1 2

2

1

CASE 51–02DO–204AA

(DO–7)

2Cathode

1Anode

STYLE 15

STYLE 1

1

2

STYLE 1

CASE 182–02TO–226AC

(TO–92)

3Cathode

1Anode

STYLE 8

1

3

2

STYLE 9

3

12


SOT–23

3

12

CASE 463–01SOT–416/SC–90


Tuning Diodes — Abrupt Junction (continued)

Table 38. General–Purpose Glass Abrupt Tuning DiodesHigh Q Capacitance Ratio @ 4.0 Volts/60 Volts

The following is a listing of axial leaded, general–purpose, abrupt tuning diodes. These devices exhibit high Q characteristics.

D i (19)

CT @ VR = 4.0 V, 1.0 MHzCap Ratio Q

Device (19)pFMin

pFNominal

pFMax

V(BR)RVolts

Cap RatioC4/C60

Min

Q4.0 V, 50 MHz

Min

Case 51–02 — DO–204AA (DO–7)

1N5139 6.1 6.8 7.5 60 2.7 3501N5140 9.0 10 11 60 2.8 3001N5143 16.2 18 19.8 60 2.8 2501N5144 19.8 22 24.2 60 3.2 2001N5145 24.3 27 29.7 60 3.2 2001N5148 42.3 47 51.7 60 3.2 200

Table 39. General–Purpose Glass Abrupt Tuning DiodesHigh Q Capacitance Ratio @ 2.0 Volts/30 Volts

The following is a listing of axial leaded, general–purpose, abrupt tuning diodes. These devices exhibit very high Qcharacteristics.

D i (20)


Device (20)pFMin

pFNominal

pFMax

VR(BR)RVolts

Cap RatioC2/C30

Min

Q4.0 V, 50 MHz

Min

Case 51–02 — DO–204AA (DO–7)

1N5441A 6.1 6.8 7.5 30 2.5 4501N5444A 10.8 12 13.2 30 2.6 4001N5446A 16.2 18 19.8 30 2.6 3501N5448A 19.8 22 24.2 30 2.6 3501N5449A 24.3 27 29.7 30 2.6 3501N5450A 29.7 33 36.3 30 2.6 3501N5451A 35.1 39 42.9 30 2.6 3001N5452A 42.3 47 51.7 30 2.6 2501N5453A 50.4 56 61.6 30 2.6 2001N5455A 73.8 82 90.2 30 2.7 1751N5456A 90 100 110 30 2.7 175

(19)Suffix A = 10.0%(20)Suffix B = 5.0%



Table 40. General–Purpose Glass Abrupt Tuning DiodesCapacitance Ratio @ 2.0 Volts/20 Volts

The following is a listing of axial leaded, general–purpose, abrupt tuning diodes. These devices exhibit high Q characteristics.

D i


DevicepFMin

pFNominal

pFMax

V(BR)RVolts

Cap RatioC2/C20

Min

Q4.0 V, 50 MHz

Typ

Case 51–02 — DO–204AA (DO–7)

MV1620 6.1 6.8 7.5 20 2.0 300MV1624 9.0 10 11 20 2.0 300MV1626 10.8 12 13.2 20 2.0 300MV1628 13.5 15 16.5 20 2.0 250MV1630 16.2 18 19.8 20 2.0 250MV1634 19.8 22 24.2 20 2.0 250MV1636 24.3 27 29.7 20 2.0 200MV1638 29.7 33 36.3 20 2.0 200MV1640 35.1 39 42.9 20 2.0 200MV1642 42.3 47 51.7 20 2.0 200MV1644 50.4 56 61.6 20 2.0 150MV1648 73.8 82 90.2 20 2.0 150MV1650 90 100 110 20 2.0 150

Table 41. General–Purpose Plastic Abrupt Tuning DiodesCapacitance Ratio @ 2.0 Volts/30 Volts

The following is a listing of plastic package, general–purpose, abrupt tuning diodes. These devices exhibit high Qcharacteristics.

D i


DevicepFMin

pFNominal

pFMax

VR(BR)RVolts

Cap RatioC4/C30

Min

Q4.0 V, 50 MHz

Typ

Case 182–02 — TO–226AC (TO–92) — 2–Lead

MV2101 6.1 6.8 7.5 30 2.5 400MV2103 9.0 10 11 30 2.5 350MV2104 10.8 12 13.2 30 2.5 350MV2105 13.5 15 16.5 30 2.5 350MV2107 19.8 22 24.2 30 2.5 300MV2108 24.3 27 29.7 30 2.5 250MV2109 29.7 33 36.3 30 2.5 200MV2111 42.3 47 51.7 30 2.5 150MV2113 61.2 68 74.8 30 2.5 150MV2114 73.8 82 90.2 30 2.5 100MV2115 90 100 110 30 2.6 100




Table 42. Surface Mount Abrupt Tuning DiodesCapacitance Ratio @ 2.0 Volts/30 Volts

The following is a listing of surface mount abrupt junction tuning diodes intended for general–purpose variable capacitancecircuit applications.

D i


Device

pF

Min

pF

Nominal

pF

Max

VR(BR)RVolts

Cap RatioC2/C30

Min

Q

4.0 V, 50 MHz

Typ

Case 318–08 — DO–236AB (SOT–23)

MMBV2101LT1 6.1 6.8 7.5 30 2.5 400MMBV2103LT1 9.0 10 11 30 2.5 350MMBV2104LT1 10.8 12 13.2 30 2.5 350MMBV2105LT1 13.5 15 16.5 30 2.5 350MMBV2107LT1 19.8 22 24.2 30 2.5 300MMBV2108LT1 24.3 27 29.7 30 2.5 250MMBV2109LT1 29.7 33 36.3 30 2.5 200

Table 43. Abrupt Tuning Diodes for FM Radio — DualThe following is a listing of abrupt tuning diodes that are available as dual units in a single package.

D i

CT @ VR(22)Cap Ratio Q

V D iS lDevice

pFMin

pFMax Volts

Cap RatioC3/C30

Min

Q3.0 V, 50 MHz

MinV(BR)R

VoltsDevice

Marking Style

Case 29–04 — TO–226AA (TO–92)

MV104 37 42 3.0 2.5 100 32 — 15

Case 318–08 — TO–236AB (SOT–23)

MMBV432LT1 43 48.1 2.0 1.5(21) 100 14 M4B 9

(21)C2/C8(22)Each Diode



Tuning Diodes —Hyper–Abrupt Junction

The Hyper–Abrupt family exhibits higher capacitance, and amuch larger capacitance ratio. It is particularly well suited forwider–range applications such as AM/FM radio and TV tuning.

Typical CharacteristicsDiode Capacitance versus Reverse Voltage

Figure 1. Diode Capacitance Figure 2. Diode Capacitance

2018

16

14

12

108

6

4

20

0.3 0.5 1 2 3 5 10 20 30

VR, REVERSE VOLTAGE (VOLTS)

40

36

32

28

24

20

16

128

4

01 3 10 30 100

CT

, DIO

DE

CAP

ACIT

ANC

E (p

F)

CT

, CAP

ACIT

ANC

E (p

F)

MMBV105GLT1

TA = 25°Cf = 1 MHz

MMBV109LT1MV209


3Cathode

2

1

CASE 51–02DO–204AA

(DO–7) STYLE 1

1

2


(TO–92)

1Anode

STYLE 8

3

1

2


SOT–23

2, 41CASE 318E–04SOT–223

12

3

4

1Cathode

2Anode

STYLE 1

1Cathode

2Anode

STYLE 2


Tuning Diodes — Hyper–Abrupt Junction (continued)

Figure 3. Diode Capacitance Figure 4. Diode Capacitance

VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

40

32

24

16

8

01 3 10 20

109

8

7

6

5

43

2

10

0.5 1 2 3 4 5 8 10 15

CT

, DIO

DE

CAP

ACIT

ANC

E (p

F)

MMBV809LT1

MMBV409LT1MV409

CT

, DIO

DE

CAP

ACIT

ANC

E (p

F)

0

4

8

12

16

20

24

28

32

36

40

0

10

20

30

40

50

0.3 0.5 1 2 3 5 10 20 30 1 2 3 5 7 10 20 30 40

10

50

100

500

1000

1 4 8 1 3 5 7 910

50

100

500

1000

Figure 5. Diode Capacitance Figure 6. Diode CapacitanceEach Die

Figure 7. Capacitance versus Reverse Voltage Figure 8. Capacitance versus Reverse Voltage



CT

, CAP

ACIT

ANC

E (p

F)

CT

, DIO

DE

CAP

ACIT

ANC

E (p

F)

CT

, DIO

DE

CAP

ACIT

ANC

E (p

F)

CT

, CAP

ACIT

ANC

E (p

F)

MVAM108 MVAM109/MV7005T1

MMBV3102LT1

TA = 25°Cf = 1 MHz

MMBV609LT1

f = 1 MHz



2 6 10 14 18 2 6 10 14 18 22 2610

50

100

500

1000

10

50

100

500

1000

Figure 9. Capacitance versus Reverse Voltage Figure 10. Capacitance versus Reverse Voltage


CT

, CAP

ACIT

ANC

E (p

F)

CT

, CAP

ACIT

ANC

E (p

F)MVAM115 MVAM125

Figure 11. Diode Capacitance versus Reverse Voltage

10

2030

50

100

200300

500

1 2 3 4 5 6 7 8 9 10


CT

, DIO

DE

CAP

ACIT

ANC

E (p

F)

MV1405

TA = 25°Cf = 1 MHz

MV1403

MV1404MV7404T1

Table 44. Hyper–Abrupt Tuning Diodes for Telecommunications — Single

The following is a listing of hyper–abrupt tuning diodes intended for high frequency, FM radio, and TV tuner applications.

D i

CT @ VR (f = 1.0 MHz) Cap Ratio @ V R Q

V D i CCV

DevicepFMin

pFMax Volts Min Max Volts

3.0 VMin

50 MHzMax

V(BR)RVolts

DeviceMarking

CaseStyle

CVCurve

Fig

Case 182–02 — TO–226AC (TO–92)

MV209 26 32 3.0 5.0 6.5 3/25 200 — 30 — 1 2MV409 26 32 3.0 1.5 2.0 3/8 200 — 20 — 1 3

Case 318–08 — TO–236AB (SOT–23)

MMBV105GLT1 1.5 2.8 25 4.0 6.5 3/25 200 — 30 M4E 8 1MMBV109LT1 26 32 3.0 5.0 6.5 3/25 200 — 30 M4A 8 2MMBV409LT1 26 32 3.0 1.5 1.9 3/8 200 — 20 X5 8 3MMBV809LT1 4.5 6.1 2.0 1.8 2.6 2/8 300 — 20 5K 8 4MMBV3102LT1 20 25 3.0 4.5 — 3/25 200 — 30 M4C 8 5

Case 419–02 — SC–70/SOT–323

MBV109T1 26 32 3.0 5.0 6.5 3/25 200 — 30 M4A 8 —




Table 45. Hyper–Abrupt Tuning Diodes for Communications — Dual

D i

CT @ VR (f = 1.0 MHz) Cap Ratio @ V R Q

V D i CCV

DevicepFMin

pFMax Volts Min Max Volts

3.0 VMin

50 MHzMax

V(BR)RVolts

DeviceMarking

CaseStyle

CVCurve

Fig

Case 318–08 — TO–236AB (SOT–23)

MMBV609LT1 26 32 3.0 1.8 2.4 3/8 250 — 20 5L 9 6

Table 46. Hyper–Abrupt Tuning Diodes for Low Frequency Applications — SingleThe following is a listing of AM, hyper–abrupt tuning diodes that have a large capacity range and are designed for lowfrequency circuit applications.

D i

CT @ 1.0 MHz Cap Ratio @ V R

VS l

CV

DevicepFMin

pFMax Volts Min Volts

V(BR)RVolts Style

CVCurveFigure

Case 182–02— TO–226AC (TO–92)

MVAM108 440 560 1.0 15 1.0/8.0 12 1 7MVAM109 400 520 1.0 12 1.0/9.0 15 1 8MVAM115 440 560 1.0 15 1.0/15 18 1 9MVAM125 440 560 1.0 15 1.0/25 28 1 10

Table 47. Hyper–Abrupt High Capacitance Voltage Variable Diode — Surface MountThe following are high capacitance voltage variable diodes intended for low frequency applications and circuits requiringlarge tuning capacitance.

D iV I

CT @ f = 1.0 MHz

C R i QS l

CV

DeviceV(BR)R

VoltsIRnA

MinpF

MaxpF

Cap RatioMin

QMin Style

CVCurveFigure

Case 318E–04— SOT–223

Pinout: 1–Anode, 2, 4–Cathode, 3–NC

MV7005T1 15 100 400 520 12(26) 150(28) 2 8MV7404T1 12 100 96 144 10(27) 200(29) 2 11

Table 48. Hyper–Abrupt High Capacitance Tuning Diodes — Axial Lead Glass Package

D i

CT @ VR Cap Ratio QV

CV

DevicepFMin

pFMax Volts

Cap RatioC2/C10

Min

Q2.0 V, 1.0 MHz

MinV(BR)R

Volts Style

CVCurveFigure

Case 51–02 — DO–204AA (DO–7)

MV1404 96 144 2.0 10 200 12 1 11MV1403 140 210 2.0 10 200 12 1 11MV1405 200 300 2.0 10 200 12 1 11

(26) VR = 1.0 V/VR = 9.0 V(27) VR = 2.0 V/VR = 10 V(28) VR = 1.0 V, f = 1.0 MHz(29) VR = 2.0 V, f = 1.0 MHz



Schottky Diodes

Schottky diodes are ideal for VHF and UHF mixer and detectorapplications as well as many higher frequency applications.They provide stable electrical characteristics by eliminatingthe point–contact diode presently used in many applications.

Typical CharacteristicsCapacitance versus Reverse Voltage

504540353025201510500

0.4

0.8

1.2

1.6

2

2.4

2.8

432100.6

0.7

0.8

0.9

1

CT

, CAP

ACIT

ANC

E (p

F)


CT

, CAP

ACIT

ANC

E (p

F)

MBD101MMBD101LT1MMBD352LT1*MMBD353LT1*MMBD354LT1*

TA = 25°C TA = 25°C

MBD701, MMBD701LT1

* EACH DIODE

(See Table 49)

MBD301,MMBD301LT1


1 3

STYLE 112

STYLE 9


(TO–92)

STYLE 8

3

1

2


SOT–23

2Cathode

1Anode

Single1 2

3Common Cathode

STYLE 19

2

3Series

STYLE 11

2

3Series

1

1

CASE 425–04SOD–123

STYLE 1

1Cathode

2Anode

1 3

CASE 419–02SC–70/SOT–323

Single

CASE 419B–01,STYLE 6SOT–363

Anode3

Cathode1

2Cathode

12

3

45

6

STYLE 12


Schottky Diodes (continued)

Table 49. Schottky Diodes

The following is a listing of Schottky diodes that exhibit low forward voltage drop for improved circuit efficiency.

D iV(BR)R

CT @ VRpF

VF @ 10 mAVolts

IR @ VRnA

MinorityLifetime Device

S lDeviceV(BR)R

VoltspF

MaxVoltsMax

nAMax

Lif etimepS (TYP)

DeviceMarking Style

Case 182–02 — TO–226AC (TO–92)MBD701 70 1.0 @ 20 V 1.0 200 @ 35 V 15 — 1MBD301 30 1.5 @ 15 V 0.6 200 @ 25 V 15 — 1MBD101 7.0 1.0 @ 0 V 0.6 250 @ 3.0 V — — 1

Case 318–08 — TO–236AB (SOT–23)MMBD701LT1 70 1.0 @ 20 V 1.0 200 @ 35 V 15 5H 8MMBD301LT1 30 1.5 @ 15 V 0.6 200 @ 25 V 15 4T 8MMBD101LT1 7.0 1.0 @ 0 V 0.6 250 @ 3.0 V 15 4M 8MMBD352LT1 (23) 7.0 1.0 @ 0 V 0.6 250 @ 3.0 V 15 M5G 11MMBD353LT1 (23) 7.0 1.0 @ 0 V 0.6 250 @ 3.0 V 15 M4F 19MMBD354LT1(23) 7.0 1.0 @ 0 V 0.6 250 @ 3.0 V 15 M6H 9MMBD355LT1(23) 7.0 1.0 @ 0 V 0.6 250 @ 3.0 V 15 MJ1 12MMBD452LT1(23) 30 1.5 @ 1.5 V 0.6 200 @ 25 V 15 5N 11

Case 425–04 — (SOD–123)MMSD701T1 70 1.0 @ 20 V 1.2 0.2 @ 35 V 15 5H 1MMSD301T1 30 1.5 @ 15 V 0.6 0.2 @ 25 V 15 4T 1MMSD101T1 4 1.0 @ 0 V 0.6 0.25 @ 3 V 15 4M 1

Case 419–02 — (SC–70/SOT–323)MMBD330T1 30 1.5 @ 15 V 0.6 0.2 @ 25 V — 4T 2MMBD770T1 70 1.0 @ 20 V 1.0 0.2 @ 35 V — 5H 2(23) Dual Diodes

Case 419B–01 — SOT–363 – Duals

D i M ki

V(BR)R IR VF CT(30) trrC

Device MarkingMin

Volts@ IBR(µA)

Max(µA)

@ VRVolts

MinVolts

MaxVolts

@ IF(mA)

CT(30)

Max(pF)

trrMax(ns)

CaseStyle

MBD110DWT1 M4 7 10 200 25 — 0.6 1.0 1.0 — 6MBD330DWT1 T4 30 10 200 25 — 0.4 1.0 1.5 — 6MBD770DWT1 H5 70 10 200 25 — 0.5 1.0 1.0 — 6(30) VR = 0 V, f = 1.0 MHz



SwitchingDiodesSmall–signal switching diodes are intended for low currentswitching and steering applications. Hot–Carrier, PIN andgeneral–purpose diodes allow a wide selection for specificapplication requirements.

Typical CharacteristicsCapacitance versus Reverse Voltage


(TO–92)12

3

1

3

2

STYLE 3

STYLE 1

1

2

2Cathode

1Anode

3

12


SOT–23

1

3

2

STYLE 4

1 3

STYLE 8

1

3

2

STYLE 9

SINGLE

COMMON CATHODE

1

3

2

STYLE 11

SERIES

1

3

2

STYLE 12

COMMON ANODE

2 3

STYLE 18

SINGLE

1

3

2

STYLE 19

SERIES

2 3

STYLE 2

SINGLE

2 3

STYLE 4

SINGLE

1

3

2

STYLE 3

COMMON CATHODE

1

3

2

STYLE 5

COMMON ANODE


3

21


(TO–92)

544842363024181200

0.20.30.5

1

2

10

CT

, DIO

DE

CAP

ACIT

ANC

E (p

F)


TA = 25°Cf = 1 MHz

MMBV3401LT120 V MAX VR

MPN3404

MPN3700MMBV3700LT1

(See Table 50)

CASE 419–02SC–70/SOT–323

3

12

1 3

STYLE 2

1

3

2

STYLE 5

SINGLE

COMMON CATHODE

1

3

2

STYLE 4

COMMON ANODE

CASE 425–04SOD–123

STYLE 1

1Cathode

2Anode

ANODE3

1 2CATHODE

CATHODE3

1 2ANODE

3

12

CASE 463–01SOT–416/SC–90

STYLE 4 STYLE 5


Switching Diodes (continued)

Table 50. PIN Switching DiodesThe following PIN diodes are designed for VHF band switching and general–purpose low current switching applications.

D i

V(BR)RCT @ VR @ 1.0 MHz

IR @ VRSeries

ResistanceD i

S lDevice

V(BR)RVoltsMin

pFMax Volts

IR @ VRµA

Max

ResistanceOhmMax

DeviceMarking Style

Case 182–02 — TO–226AC (TO–92)

MPN3700 200 1.0 20 0.1 @ 150 1.0 @ 10 mA — 1MPN3404 20 2.0 15 0.1 @ 25 V 0.85 @ 10 mA — 1

Case 318–08 — TO–236AB (SOT–23)

MMBV3700LT1 200 1.0 20 0.1 @ 150 1.0 @ 10 mA 4R 8MMBV3401LT1 35 1.0 20 0.1 @ 25 V 0.7 @ 10 mA 4D 8

Table 51. General–Purpose Signal and Switching Diodes — SingleThe following is a listing of small–signal switching diodes in surface mount packages. These diodes are intended for lowcurrent switching and signal steering applications.

D i M ki

V(BR)R IR VF CT(30) trr

Device MarkingMin

Volts@ IBR(µA)

Max(µA)

@ VRVolts

MinVolts

MaxVolts

@ IF(mA)

Max(pF)

Max(ns)

CaseStyle

Case 318–08 — TO–236AB (SOT–23)

BAS21LT1 JS 250 100 0.1 200 — 1.0 100 5.0 50 8MMBD914LT1 5D 100 100 5.0 75 — 1.0 10 4.0 4.0 8BAS16LT1 A6 75 100 1.0 75 — 1.0 50 2.0 6.0 8MMBD6050LT1 5A 70 100 0.1 50 0.85 1.1 100 2.5 4.0 8BAL99LT1 JF 70 100 2.5 70 — 1.0 50 1.5 6.0 18

Case 318D–04 — SC–59

M1MA151AT1 MA 40 100 0.1 35 — 1.2 100 2.0 3.0 4M1MA151KT1 MH 40 100 0.1 35 — 1.2 100 2.0 3.0 2

Case 419–02 — SC–70/SOT–323

BAS16WT1 A6 75 1.0 0.02 20 — 1.25 150 2.0 6.0 2M1MA141KT1 MH 40 100 0.1 35 — 1.2 100 2.0 3.0 2M1MA142KT1 MI 80 100 0.1 75 — 1.2 100 2.0 3.0 2M1MA174T1 J6 100 100 5.0 75 — 1.0 10 4.0 4.0 2

Case 425–04— SOD–123

MMSD914T1 5D 100 100 5.0 75 — 1.0 10 4.0 4.0 1MMSD4148T1 5I 100 100 5.0 75 — 1.0 10 4.0 4.0 1MMSD71RKT1 6S — — 0.5 80 — 1.2 100 2.0 4.0 1

(30) VR = 0 V, f = 1.0 MHz




Table 52. General–Purpose Signal and Switching Diodes — DualThe following is a listing of small–signal switching diodes in surface mount packages. These diodes are intended for lowcurrent switching and signal steering applications.

D i M ki


Device MarkingMin

Volts@ IBR(µA)

Max(µA)

@ VRVolts

MinVolts

MaxVolts

@ IF(mA)

Max(pF)

Max(ns)

CaseStyle

Case 318–08 — TO–236AB (SOT–23)

MMBD7000LT1 M5C 100 100 1.0 50 0.75 1.1 100 1.5 4.0 11MMBD2836LT1 A2 75 100 0.1 50 — 1.0 10 4.0 4.0 12MMBD2838LT1 A6 75 100 0.1 50 — 1.0 10 4.0 4.0 9BAV70LT1 A4 70 100 5.0 70 — 1.0 50 1.5 6.0 9BAV99LT1 A7 70 100 2.5 70 — 1.0 50 1.5 4.0 11BAW56LT1 A1 70 100 2.5 70 — 1.0 50 2.0 6.0 12MMBD6100LT1 5BM 70 100 0.1 50 0.85 1.1 100 2.5 4.0 9BAV74LT1 JA 50 5.0 0.1 50 — 1.0 100 2.0 4.0 9MMBD2835LT1 A3 35 100 0.1 30 — 1.0 10 4.0 4.0 12MMBD2837LT1 A5 35 100 0.1 30 — 1.0 10 4.0 4.0 9

Case 318D–04 — SC–59

M1MA151WAT1 MN 40 100 0.1 35 — 1.2 100 15 10 5M1MA151WKT1 MT 40 100 0.1 35 — 1.2 100 2.0 3.0 3

Case 419–02 — SC–70/SOT–323

M1MA142WKT1 MU 80 100 0.1 75 — 1.2 100 2.0 3.0 5M1MA142WAT1 MO 80 100 0.1 75 — 1.2 100 15 10 4BAW56WT1 A1 70 100 2.5 70 — 1.0 50 2.0 6.0 4BAV70WT1 A4 70 100 5.0 70 — 1.0 50 1.5 6.0 5BAV99WT1 A7 70 100 2.5 70 — 1.0 50 1.5 6.0 9BAV99RWT1 F7 70 100 2.5 70 — 1.0 50 1.5 6.0 10M1MA141WKT1 MT 40 100 0.1 35 — 1.2 100 2.0 3.0 5M1MA141WAT1 MN 40 100 0.1 35 — 1.2 100 15 10 4

Case 463–01 — SOT–416/SC–90 (Common Anode)

DAP222 P9 80 100 100 70 — 1.2 100 3.5 4.0 4

Case 463–01 — SOT–416/SC–90 (Common Cathode)

DAN222 N9 80 100 100 70 — 1.2 100 3.5 4.0 5

Table 53. Low–Leakage Medium Speed Switching Diodes — Single

D i M ki


Device MarkingMin

Volts@ IBR(µA)

Max(nA)

@ VRVolts

MinVolts

MaxVolts

@ IF(mA)

Max(pF)

Max(ns)

CaseStyle

Case 318–08 — TO–236AB (SOT–23)

BAS116LT1 JV 75 100 5.0 75 — 1.0 10 2.0 3000 8MMBD1000LT1 AY 30 100 0.5 30 — 0.95 10 2.0 3000 6

Case 419–02 — (SOT–323)/(SC–70)

MMBD2000T1 DH 30 100 0.5 30 — 0.95 10 2.0 3000 2

Case 318D–04 — (SC–59)

MMBD3000T1 XP 30 100 0.5 30 — 0.95 10 2.0 3000 2

Case 425–04 — (SOD–123)

MMSD1000T1 4K 30 100 0.5 30 — 0.95 10 2.0 3000 1




Table 54. Low–Leakage Medium Speed Switching Diodes — Dual

D i M ki


Device MarkingMin

Volts@ IBR(µA)

Max(nA)

@ VRVolts

MinVolts

MaxVolts

@ IF(mA)

Max(pF)

Max(ns)

CaseStyle

Case 318–08 — TO–236AB (SOT–23)

BAV170LT1 JX 70 100 5.0 70 — 1.0 10 2.0 3000 9BAV199LT1 JY 70 100 5.0 70 — 1.0 10 2.0 3000 11BAW156LT1 JZ 70 100 5.0 70 — 1.0 10 2.0 3000 12MMBD1005LT1 A3 30 100 0.5 30 — 0.95 10 2.0 3000 12MMBD1010LT1 A5 30 100 0.5 30 — 0.95 10 2.0 3000 9

Case 419–02 — (SOT–323)/(SC–70) — DUAL

MMBD2005T1 DI 30 100 0.5 30 — 0.95 10 2.0 3000 4MMBD2010T1 DP 30 100 0.5 30 — 0.95 10 2.0 3000 5

Case 318D–04 — (SC–59) — DUAL

MMBD3005T1 XQ 30 100 0.5 30 — 0.95 10 2.0 3000 5MMBD3010T1 XS 30 100 0.5 30 — 0.95 10 2.0 3000 3

(30) VR = 0 V, f = 1.0 MHz



MultipleSwitching DiodesMultiple diode configurations utilize monolithic structures fabricated by the planar process. They are designed to satisfy fastswitching requirements as in core driver and encoding/decoding applications where their monolithic configurations offer lower cost,higher reliability and space savings.

Diode Array Diagrams

14

1

14

2

1

12

NC Pin 6, 13NC Pin 4,6,10,13

NC Pin 1, 4, 6, 10, 13

Dual 10DiodeArray

2

Dual 10DiodeArray

16DiodeArray

8 DiodeArray

(CommonCathode)

8 DiodeArray

(CommonAnode)

Dual 8DiodeArray

Isolated8 Diode

Array

Isolated7 Diode

Array

NC Pin 1, 4, 6, 10, 13

11

8 9 10 13 14 1 4 5 6 7

3

2

3 4 12 13 14 5 8 9 10 11

6

7

2 3 5 7 8 9 11 12

2 3 5 7 8 9 11 12

14

2 3 5 7 8 9 11 12

14

1

2 3 11 12 4 5 9 10

8

7

1 2 3 4 5 6 7 8

16 15 14 13 12 11 12 9

7 6 5 4 3 2 1

8 9 10 11 12 13 14

3

4

5

6

7

8

1

1

CASE 646–06PIN DIP

PLASTIC

CASE 648–08PIN DIP

PLASTIC

CASE 751A–03SO–14

PLASTIC

CASE 751B–05SO–16

PLASTIC

14

116

1

14

116

1


Multiple Switching Diodes (continued)

Table 55. Diode Arrays

Case 646 — TO–116

D i F iPin Connections

Device FunctionPin ConnectionsDiagram Number

MAD130P Dual 10 Diode Array 1MAD1103P 16 Diode Array 3MAD1107P Dual 8 Diode Array 6MAD1109P 7 Isolated Diode Array 8

Case 648–08

MAD1108P 8 Isolated Diode Array 7

Case 751A–03— SO–14

MMAD130 Dual 10 Diode Array 2MMAD1103 16 Diode Array 3MMAD1105 8 Diode Common Cathode Array 4MMAD1106 8 Diode Common Anode Array 5MMAD1107 Dual 8 Diode Array 6MMAD1109 7 Isolated Diode Array 8

Case 751B–05 — SO–16

MMAD1108 8 Isolated Diode Array 7



Plastic–EncapsulatedSurface Mount Devices

Energy. It’s something Motorola is putting a lot of energy intohelping save. That’s why we’re introducing our GreenLineportfolio of devices, featuring energy–conserving traitssuperior to those of our existing line of standard parts for thesame usage. GreenLine devices can actually help reduce thepower demands of your products.

Wide Range of ApplicationsCurrently, our portfolio consists of three families.

• Low–Leakage Switching Diodes: With reverse leakagespecifications guaranteed to 500 pA, they help extend batterylife, making them ideal for small battery–operated systems inwhich standby power is essential. Applications include ESDprotection, reverse voltage protection, and steering logic.

• Bipolar Output Driver Transistors: Offering ultra–lowcollector saturation voltage, they deliver more energy to theintended load with less power wasted through dissipation loss.They are especially effective in today’s lower voltagebattery–powered applications, and prolong battery life inportable and hand–held communications and personal digitalequipment.

• Small Signal HDTMOS : These devices provide ourlowest ever drain–source resistance versus package size.Lower rDS(on) means less wasted energy through dissipationloss, making them especially effective for low–currentapplications where energy conservation is crucial, such as lowcurrent switchmode power supplies, uninterruptable powersupplies (UPS), power management systems, and biasswitching. This makes them ideal for portable computer–typeproducts or any system where the combination of powermanagement and energy conservation is key.

Save Energy — Save MoneyIn an increasingly power–hungry world, Motorola’s

GreenLine portfolio makes powerful sense. So much sensethat we plan to continue adding devices to the portfolio.Chances are, there are Motorola GreenLine devicesapplicable to one or more of your products — ones that canhelp save energy, dollars — and the environment.

Table 56. Bipolar Driver Transistor — PNPThese offer ultra–low collector saturation voltage.Pinout: 1–Base, 2–Emitter, 3–Collector

D i T M ki C V V

hFE@ IC

Device Type Marking Case V(BR)CEO VCE(sat) VBE(sat) Min Max mA

MMBT1010LT1 GLP SOT–23 15 0.1 1.1 300 600 100MSD1010T1 GLP SC–59 15 0.1 1.1 300 600 100



SOT–23


12

3

12

3

CASE 419–02SC–70/SOT–323

3

12

CASE 425–04SOD–123


GreenLine (continued)

Table 57. Low Leakage Switching DiodesThese offer reverse leakage specifications guaranteed to 500 pA. Versions available in single and dual.

D i T M ki C

V(BR)R IR

Device Type Marking Case StyleMin

Volts@ IBR(µA)

Max(nA)

@ VRVolts

MMBD1000LT1 AY SOT–23 Single 30 100 0.5 30MMBD1005LT1 A3 SOT–23 Dual Anode 30 100 0.5 30MMBD1010LT1 A5 SOT–23 Dual Cathode 30 100 0.5 30

MMBD2000T1 DH SC–70 Single 30 100 0.5 30MMBD2005T1 DI SC–70 Dual Anode 30 100 0.5 30MMBD2010T1 DP SC–70 Dual Cathode 30 100 0.5 30

MMBD3000T1 XP SC–59 Single 30 100 0.5 30MMBD3005T1 XQ SC–59 Dual Anode 30 100 0.5 30MMBD3010T1 XS SC–59 Dual Cathode 30 100 0.5 30

MMSD1000T1 4K SOD–123 Single 30 100 0.5 30

Table 58. Small Signal HDTMOS These provide the lowest drain–source resistance versus package size.

D i T M ki Ch l

RDS(on)

V


S lDevice Type Marking Channel Ohm mA VDSS

VoltsMin

VoltsMax

t(on)ns

t(off)ns Style

Case 318–08 — TO–236AB (SOT–23) — P–Channel and N–Channel

MMBF0201NLT1 N1 N 1.0 300 20 1.0 2.4 2.5 15 21MMBF0202PLT1 P3 P 1.4 200 20 1.0 2.4 2.5 16 21MGSF1N02LT1 — N 0.08 2000 20 1.0 2.4 2.5 16 21MGSF1N03LT1 — N 0.09 2000 30 1.0 2.4 2.5 16 21MGSF1P02LT1 — P 0.20 1500 20 1.0 2.4 2.5 16 21MGSF1P02ELT1 — P 0.16 1500 20 0.7 1.0 2.5 16 21

Case 419–02 — SC–70/SOT–323

MMBF2202PT1 P3 P 1.5 200 20 1.0 2.4 2.5 16 7MMBF2201NT1 N1 N 0.7 300 20 1.0 2.4 2.5 15 7



Small SignalMulti–integrated Devices

Table 59. Low Voltage Bias StabilizerA silicon SMALLBLOCK integrated circuit which maintains stable bias current in various discrete bipolar junction and fieldeffect transistors.

D i T M ki

VCC (Volts) ICC Vref ∆VrefDevice Type Marking Min Max

ICCµA

VrefVolts

∆VrefVolts

Case 318A–05 — SOT–143

MDC5000T1 E5 1.8 10 200 2.1 ±50

Case 419B–01 — SOT–363

MDC5001T1 E6 1.8 10 200 2.1 ±50

Table 60. Integrated Relay/Solenoid DriverMonolithic circuit block to switch 3.0 V to 5.0 V relays. It is intended to replace an array of three to six discrete components.

D i T

VCC (Volts) Vin (Volts)Vsat Iin IC(on)

Device Type Min Max Min MaxVsat

(Volts)Iin

(mA)IC(on)(mA)

Case 318–08 — SOT–23

MDC3105LT1 2.0 5.5 2.0 5.5 0.4 2.5 250


CASE 318A–05SOT–143

INTERNAL CIRCUIT DIAGRAMS

VCC (3)

GND (1)

Vref (4)

Iout (2)

Q1

Q2

R1

R2

R3

R4

Vout (3)

Vin

(1)

1.0 k

33 k

6.8 V

GND (2)

CASE 318–08SOT–23

12

3

45

6


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