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Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur denEinsatz in der Photovoltaik
Levon Altunyan
Fakultat fur IngenieurwissenschaftenNanostrukturtechnik
Universitat Duisburg-Essen
February 01, 2012
Levon Altunyan Universitat Duisburg-Essen - Fakultat fur Ingenieurwissenschaften, Nanostrukturtechnik
Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur den Einsatz in der Photovoltaik
IntroductionExperiments and Results
Type I CellsType II Cells
Summary
Outline
1 IntroductionProblem Description
2 Experiments and ResultsDynamic light scatteringProfilometry“Safe” regions determinationReference Cell I-V Measurements
3 Type I CellsPrimary ObservationsFinal IV-CharacterizationsCrystallinity and Cell BehaviorSEM InvestigationsEDX Considerations
4 Type II CellsConductivity Measurements
5 SummaryConclusionsFuture Work
Levon Altunyan Universitat Duisburg-Essen - Fakultat fur Ingenieurwissenschaften, Nanostrukturtechnik
Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur den Einsatz in der Photovoltaik
IntroductionExperiments and Results
Type I CellsType II Cells
Summary
Problem Description
BSF for Photovoltaic Cells
Motivation:
Classical solutions - negative impact on cells:Different expansion coefficients of Al and Si.Warping of the cell is observed.Difficulties in subsequent production.Increased probability of breakage.
New materials such as Si-nanoparticles investigated:A non-toxic material.Abundant in the nature.Strongly reduced size.
Suggested Solution:
Spin-coated Si-nanoparticles.Sintered with the Silicon layer.Controlled, brief, local heating.Create highly doped p+-type region.Benefit in cost per watt reduction.
Levon Altunyan Universitat Duisburg-Essen - Fakultat fur Ingenieurwissenschaften, Nanostrukturtechnik
Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur den Einsatz in der Photovoltaik
IntroductionExperiments and Results
Type I CellsType II Cells
Summary
Dynamic light scatteringProfilometry“Safe” regions determinationReference Cell I-V Measurements
Liquids of Si-nanoparticles:
HWR.
p-doped (boron).
DLS - diameter µ ≈ 100 d.nm; σ ≈ 9d.nm.
5%wt; 10%wt;
Ball milling procedure:
1 Pre-dispersing - YTZ beads (300 µm).
2 15 min. ultrasonic cleaning applied.
3 Main-dispersing - YTZ beads (100 µm).
4 Final filtering - pore size 0, 5µm.
10 100 1000
0
10
20
30
Filtered particles Measurement 3 weeks before rest of curves 45 min 2000 rpm 75 min 3000 rpm
Mea
n Nu
mbe
r [%
]
Size [d.nm]
Conclusions:
Si-nanoparticles keep size characteristics after three weeks have passed.
Milling for 75 min and reaching 3000 rpm (final mixing velocity) - sufficient.
Graph fit - gaussian distribution, mean value µ ≈ 100d .nm., standard deviationσ ≈ 9d .nm.
Levon Altunyan Universitat Duisburg-Essen - Fakultat fur Ingenieurwissenschaften, Nanostrukturtechnik
Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur den Einsatz in der Photovoltaik
IntroductionExperiments and Results
Type I CellsType II Cells
Summary
Dynamic light scatteringProfilometry“Safe” regions determinationReference Cell I-V Measurements
Layer Thickness
Si-nanoparticles spun on glass substrate:
Big glass substrate (25× 25mm2).
Across sample seven more or lessparallel scratch lines (A to G)considered.
An average height ofhSiNp = 650nm(±25nm).
Inhomogeneous thickness due tosubstrate size.
Peak in middle due to depositionmethod/speed.
874 0953,0
Thickness [nm]
2,0 637 0716,0795,0874,0
,
1 5
,
m] 400,0
479,0558,0637,0
1 0
1,5
ition
[cm
1,0
y-Po
si
0,5
0,0 0,5 1,0 1,5 2,00,0
P iti [ ]2
x-Position [cm]
Levon Altunyan Universitat Duisburg-Essen - Fakultat fur Ingenieurwissenschaften, Nanostrukturtechnik
Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur den Einsatz in der Photovoltaik
IntroductionExperiments and Results
Type I CellsType II Cells
Summary
Dynamic light scatteringProfilometry“Safe” regions determinationReference Cell I-V Measurements
“Safe” regions determination
45
40
45
35[%]
30ensi
ty [
25"Eye" Guidelinese
r Int
e
20
Eye GuidelineOptimal IntensityOptimal Intensity Argon
Las
0 2000 4000 6000 8000 1000015
p y gOptimal Intensity Nitrogen
7
0 2000 4000 6000 8000 10000Scan Velocity [mm/min]
0 - no visible laser illumination;
1 - visible laser illumination/no change of the sample’s surface;
2 - optimal = change to silver like color of the sample’s surface;
3 - slightly scratched layer;
4 - ablation of cell’s layer;
5 - layer is totally removed;
Levon Altunyan Universitat Duisburg-Essen - Fakultat fur Ingenieurwissenschaften, Nanostrukturtechnik
Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur den Einsatz in der Photovoltaik
IntroductionExperiments and Results
Type I CellsType II Cells
Summary
Dynamic light scatteringProfilometry“Safe” regions determinationReference Cell I-V Measurements
Reference cell - a semi-ready cell with antireflex coating (SiN), front Ag silver gridcontacts and back Al layer metalization from the company Solland Solar.
Breakdown voltage can be extracted to be Vbr = −8, 5V .Open circuit voltage is Voc = 0, 59V .Short circuit current equals to Isc = −27, 78mA.Power at maximum power point is given as PMPP = 9, 7mW .Fill factor of FF = 59, 21% can be computed.An effective cell efficiency of η = 12, 93% was obtained.
-5 0 5 10 15
-0,10
-0,05
0,00
0,05
0,10
Reference Cell by Solland Solarwith Anti-Reflective Coating and Metal Contacts
Dark
Cur
rent
[A]
Voltage [V]-3 -2 -1 0 1
-0,04
-0,02
0,00
0,02
0,04
0,06
0,08
0,10
0,12
Reference Cell with Anti-reflex Coating and Al BSF;No Si-nano Particles, No Sintering;
Cur
rent
[A]
Voltage [V]
Illuminated Dark
Rs = 5,9 Ω;Rsh = 2060,19 Ω;
Levon Altunyan Universitat Duisburg-Essen - Fakultat fur Ingenieurwissenschaften, Nanostrukturtechnik
Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur den Einsatz in der Photovoltaik
IntroductionExperiments and Results
Type I CellsType II Cells
Summary
Dynamic light scatteringProfilometry“Safe” regions determinationReference Cell I-V Measurements
Sample Name In Figure Scan Parameters Nano ParticlesReference a1 No Laser Treatment No
#0110 a2 1x10%100mm/min Yes#11 a3 1x10%100mm/min Yes#05 a4 1x15%100mm/min Yes#08 a5 1x17%100mm/min Yes#17 a6 1x17%100mm/min Yes
#0622062011 a7 1x18%100mm/min Yes#13 a8 1x18%100mm/min Yes#07 a9 1x19%100mm/min Yes
#06 20.06.11 a10 6(continuous ↓↑)x50%10m/min 1x30%100mm/min No
Levon Altunyan Universitat Duisburg-Essen - Fakultat fur Ingenieurwissenschaften, Nanostrukturtechnik
Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur den Einsatz in der Photovoltaik
IntroductionExperiments and Results
Type I CellsType II Cells
Summary
Primary ObservationsFinal IV-CharacterizationsCrystallinity and Cell BehaviorSEM InvestigationsEDX Considerations
0 5 10 15 20 25 30
20
25
30
35
40a4
a5
a2
a1
a3
a7
a9
a10
a7
a7a8
Fill Factor vs Laser Intensity
FF [%
]
Laser Intensity [%]
a9a6
0 5 10 15 20 25 30
0
1
2
3
4
5
6
7
a5
a4
a5a2a1
a3
a9
a10
a7
a8
η [%
]
Laser Intensity [%]
Cell Efficiency vs Laser Intensity
Levon Altunyan Universitat Duisburg-Essen - Fakultat fur Ingenieurwissenschaften, Nanostrukturtechnik
Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur den Einsatz in der Photovoltaik
IntroductionExperiments and Results
Type I CellsType II Cells
Summary
Primary ObservationsFinal IV-CharacterizationsCrystallinity and Cell BehaviorSEM InvestigationsEDX Considerations
-0,9 -0,6 -0,3 0,0 0,3 0,6 0,9-0,04
-0,02
0,00
0,02
0,04
Rs = 9,75 Ω;Rsh = 689,54 Ω;
Cur
rent
[A]
Voltage [V]
Dark Illuminated
Sample #05 from 22.06.20111xscan 15% @ 100mm/min
Solar Cell With Anti-reflective Coating and Ag Front Contacts Grid, DepositedSi-nanoparticles.Iscan = 15% Vscan = 0, 1m/min.Fill Factor FF ≈ 41%.Cell efficiency η = 6, 38%.Low series resistance Rs = 9, 75Ω.High shunt resistance Rsh = 689, 54Ω.Levon Altunyan Universitat Duisburg-Essen - Fakultat fur Ingenieurwissenschaften, Nanostrukturtechnik
Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur den Einsatz in der Photovoltaik
IntroductionExperiments and Results
Type I CellsType II Cells
Summary
Primary ObservationsFinal IV-CharacterizationsCrystallinity and Cell BehaviorSEM InvestigationsEDX Considerations
1 grinding of the sample’s edges.
cleaningputting on an adhesive tape on the front side of the sample as protection measure;spin-coating;
2 cleaning the edges with a Cotton Swab rinsed in Ethanol or Acetone;
3 grinding of the sample’s edges;
laser sintering step (Iscan = 15% Vscan = 100mm/min);
4 cleaning the sample’s Si-nanoparticle thin film.
Levon Altunyan Universitat Duisburg-Essen - Fakultat fur Ingenieurwissenschaften, Nanostrukturtechnik
Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur den Einsatz in der Photovoltaik
IntroductionExperiments and Results
Type I CellsType II Cells
Summary
Primary ObservationsFinal IV-CharacterizationsCrystallinity and Cell BehaviorSEM InvestigationsEDX Considerations
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 170,100,150,200,250,300,350,400,450,500,55
Voc
[V]
Combination [-]
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
0,000
-0,005
-0,010
-0,015
-0,020
Average Open Circuit Voltage and Short Circuit Current
Combination [-]
Ιsc[
A]
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 170,150,200,250,300,350,400,450,500,55
FF [%
]
Combination [-]
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
0,00,51,01,52,02,53,0
Average Fill Factor and Corresponding Efficiency
Combination [-]
η [%
]
Figure: Applying Different Cleaning Procedures: a.) Open Circuit Voltage and Short CircuitCurrent; b.) Fill Factor and Corresponding Efficiency;
Levon Altunyan Universitat Duisburg-Essen - Fakultat fur Ingenieurwissenschaften, Nanostrukturtechnik
Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur den Einsatz in der Photovoltaik
IntroductionExperiments and Results
Type I CellsType II Cells
Summary
Primary ObservationsFinal IV-CharacterizationsCrystallinity and Cell BehaviorSEM InvestigationsEDX Considerations
Combination Included Optional Steps1 Grinded (Step 01) and Sintered Samples, No Particles Deposited2 Cleaning the Edges With a Cotton Swab Rinsed in Acetone (Step 02)3 Cleaning the Edges With a Cotton Swab Rinsed in Ethanol (Step 02)4 Reference Cell, Grinded Only (Step 01), No Particles Deposited, Not Sintered5 Grinding of the Samples’ Edges, (Step 03)6 Grinding of the Samples’ Edges, (Step 01)7 Cleaning with Acetone the Samples’ Nanoparticle Thin Film, (Step 04)8 Cleaning with Ethanol the Samples’ Nanoparticle Thin Film, (Step 04)
Levon Altunyan Universitat Duisburg-Essen - Fakultat fur Ingenieurwissenschaften, Nanostrukturtechnik
Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur den Einsatz in der Photovoltaik
IntroductionExperiments and Results
Type I CellsType II Cells
Summary
Primary ObservationsFinal IV-CharacterizationsCrystallinity and Cell BehaviorSEM InvestigationsEDX Considerations
1 2 3 4 5 6 7 80,000
-0,005
-0,010
-0,015
-0,020
Jsc
[A/c
m2 ]
Combination [-]
1 2 3 4 5 6 7 8
0,00,10,20,30,40,50,6
Combination [-]
Voc
[V]
1 2 3 4 5 6 7 816
18
20
22
24
26
FF [%
]Combination [-]
1 2 3 4 5 6 7 8
0,0
0,5
1,0
1,5
2,0
2,5
Combination [-]
η [%
]
Figure: Applying Different Cleaning Procedures: a.) Open Circuit Voltage and Short CircuitCurrent; b.) Fill Factor and Corresponding Efficiency;
Levon Altunyan Universitat Duisburg-Essen - Fakultat fur Ingenieurwissenschaften, Nanostrukturtechnik
Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur den Einsatz in der Photovoltaik
IntroductionExperiments and Results
Type I CellsType II Cells
Summary
Primary ObservationsFinal IV-CharacterizationsCrystallinity and Cell BehaviorSEM InvestigationsEDX Considerations
-3 -2 -1 0 1 2 3-0,06
-0,04
-0,02
0,00
0,02
0,04
0,06Q-tip (Acetton) Sample #05
Cur
rent
[A]
Voltage [V]
Illuminated(1) Dark(1) Illuminated(2) Dark(2) Illuminated(3) Dark(3)
-3 -2 -1 0 1 2 3
-0,040
-0,035
-0,030
-0,025
-0,020
-0,015
-0,010
-0,005
0,000
0,005Q-tip (Acetton) Sample #06
Cur
rent
[A]
Voltage [V]
Illuminated (1) Dark(1) Illuminated(2) Dark(2) Illuminated(3) Dark(3)
Figure: Front Side (Step 2-Cleaning the Edges With a Cotton Swab Rinsed in Acetone, Samples05 and 06)
Levon Altunyan Universitat Duisburg-Essen - Fakultat fur Ingenieurwissenschaften, Nanostrukturtechnik
Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur den Einsatz in der Photovoltaik
IntroductionExperiments and Results
Type I CellsType II Cells
Summary
Primary ObservationsFinal IV-CharacterizationsCrystallinity and Cell BehaviorSEM InvestigationsEDX Considerations
Sample 20110901 ‐ 08
Scan unbehandeltScan unbehandelt –hochreflektierend – unbehandelt
100 µm
10 µm 10 µm 10 µm
Figure: Micrograph Sintered Coated Sample, Transition (Untreated-Treated-Untreated) Region
Levon Altunyan Universitat Duisburg-Essen - Fakultat fur Ingenieurwissenschaften, Nanostrukturtechnik
Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur den Einsatz in der Photovoltaik
IntroductionExperiments and Results
Type I CellsType II Cells
Summary
Primary ObservationsFinal IV-CharacterizationsCrystallinity and Cell BehaviorSEM InvestigationsEDX Considerations
Highly reflective Non-reflective
10 µm
Difference in color!Difference in color!
Figure: Highly vs. Low Reflective Area Comparison; Semi-ready Solar Cell with Anti-reflexCoating and Pre-deposited Front Side Ag Contacts (Sample No 10, 01.09.2011: 6× preheating,Ipreheat = 50%@Vpreheat = 10m/min; 1 sinter scan, Isintern = 30%@Vsintern = 0, 2m/min)
Levon Altunyan Universitat Duisburg-Essen - Fakultat fur Ingenieurwissenschaften, Nanostrukturtechnik
Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur den Einsatz in der Photovoltaik
IntroductionExperiments and Results
Type I CellsType II Cells
Summary
Primary ObservationsFinal IV-CharacterizationsCrystallinity and Cell BehaviorSEM InvestigationsEDX Considerations
Figure: Back Surface of the Solar Cells After Sintering: a.) Type II 21.09.2011; b.) Type I,01.06.2011; c.) Kapton R© foils
Levon Altunyan Universitat Duisburg-Essen - Fakultat fur Ingenieurwissenschaften, Nanostrukturtechnik
Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur den Einsatz in der Photovoltaik
IntroductionExperiments and Results
Type I CellsType II Cells
Summary
Primary ObservationsFinal IV-CharacterizationsCrystallinity and Cell BehaviorSEM InvestigationsEDX Considerations
800 1000 1200 14000,01
0,1
1
10
2*10-3*exp-1,59/(κb*T)*10-8 μm2/s
2*10-3*exp-1,6/(κb*T)*10-8 μm2/s
6*10-5*exp-1,15/(κb*T)*10-8 μm2/s Extrapolation of graph
Diff
usio
n C
oeffi
cien
t [μm
2 /s]
Temperature [°C]
Diffusion Coefficient ofSilver in Silicon vs Temperature
[43, 44][45, 46]
[47]
1 µm1 µm
O
NCTi
SiAg Zn
Figure: Possible diffusion of front silver contacts into the n-layer takes place. More importantly,there exists a probability that the front contacts get even further - to the p-layer.
Levon Altunyan Universitat Duisburg-Essen - Fakultat fur Ingenieurwissenschaften, Nanostrukturtechnik
Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur den Einsatz in der Photovoltaik
IntroductionExperiments and Results
Type I CellsType II Cells
Summary
Conductivity Measurements
-3 -2 -1 0 1 2-0,04
-0,02
0,00
0,02
0,04
0,06
0,08
0,10
0,12
Rs = 18,88 Ω;Rsh = 1204,54 Ω;
15% 1scan with Si-nano Particles
Cur
rent
[A]
Voltage [V]
Dark Illuminated
-3 -2 -1 0 1 2
-0,06
-0,04
-0,02
0,00
0,02
0,04
0,06
0,08
0,10
0,12
Rs = 23,38 Ω;Rsh = 76,21 Ω;
Dark Illuminated
35% 1scan with Si-nano Particles
Cur
rent
[A]
Voltage [V]
15 20 25 30 35 40 450,01
0,1
1
10
100 With Particles - Initial Study from 13.09.2011 With Particles - Samples from 16.09.2011 Without Particles - Samples from 16.09.2011
On-Off Current Ratio - Samples With and Without Nanoparticles
Rat
io [+
1/-1
]
Laser Intensity [%]0 10 20 30 40 50 60 70
0,0
0,5
1,0
1,5
2,0
2,5
3,0
Laser Intensity [%]
Effi
cien
cy [%
]
Efficiency vs Laser Intensity
Levon Altunyan Universitat Duisburg-Essen - Fakultat fur Ingenieurwissenschaften, Nanostrukturtechnik
Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur den Einsatz in der Photovoltaik
IntroductionExperiments and Results
Type I CellsType II Cells
Summary
Conductivity Measurements
25 30 35 40 45 50 5510-4
10-3
10-2Conductivity Total vs Laser Intensity
Con
duct
ivity
[Ω−1
cm−1
]
Laser Intensity [%]
Rtotal
RL
RL
RL
RL
UU
U
Si Wafer
Si-NP
RSi-NP
RWafer
RL RLRL RL
dSiNp
dwafer
Argon N2 Si Si+Np (no laser) Al10-3
10-2
10-1
100
5x105106
Con
duct
ivity
[Ω-1cm
-1]
Parameters
Conductivity of samples treated in Ar, N2,
without laser treatment with Si-NP spincoated only
Comparisson: Al(data from Handbook of Chemistry and Physics 90th ed.)
Levon Altunyan Universitat Duisburg-Essen - Fakultat fur Ingenieurwissenschaften, Nanostrukturtechnik
Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur den Einsatz in der Photovoltaik
IntroductionExperiments and Results
Type I CellsType II Cells
Summary
Conductivity Measurements
Dielectric Constant, Results and Discussion
Results:
Conductivity values (σtotal ≤ 2, 57× 10−3 Scm
) corresponds well to the values given inliterature [2].
Comparable with nanoparticle-coated Si-wafer pieces not treated with an IR-laser(σNoLaser ≤ 3, 52× 10−3 S
cm).
Conductivity of the Si-wafer itself σwafer = 0, 0137 Scm
.
Single scans with low intensities are not sufficient for melting most of the depositedSi-nanoparticles.
Remove native silicon surface oxide (Eg = 9eV [2]) with hydrofluoric acid beforelaser treatment.
Use more scans at higher intensity.
Levon Altunyan Universitat Duisburg-Essen - Fakultat fur Ingenieurwissenschaften, Nanostrukturtechnik
Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur den Einsatz in der Photovoltaik
IntroductionExperiments and Results
Type I CellsType II Cells
Summary
ConclusionsFuture Work
Summary
Summary
The size and stability of the particles inside the dispersion was determined.
Laser treated semi-ready structures from Solland Solar with (Type I) and withoutantireflective coating (Type II).
The characteristic curves of different treated samples are examined.
Fill Factor of FF = 41%; cell efficiency of around η = 6, 38% (Type I).
Fill Factor of FF = 27%; cell efficiency of around η = 2, 95% (Type II).
SEM measurements are carried out.
Estimation of doping depth to at least hBSF = 5µm is achieved.
Breakdown voltage and breakdown field strength are studied.
An initial work with thin-film Kapton R© foils.
Levon Altunyan Universitat Duisburg-Essen - Fakultat fur Ingenieurwissenschaften, Nanostrukturtechnik
Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur den Einsatz in der Photovoltaik
IntroductionExperiments and Results
Type I CellsType II Cells
Summary
ConclusionsFuture Work
Proposals for Future Work
More thorough studies of the regions characterized by a highly reflective surface.
Further studies of the correlation between crystallinity size and diode behavior.
Pulsed UV-Laser treatment on Kapton R© foils.
Levon Altunyan Universitat Duisburg-Essen - Fakultat fur Ingenieurwissenschaften, Nanostrukturtechnik
Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur den Einsatz in der Photovoltaik
ReferencesAbbreviations
N. BensonNETZ Vollversammlung,Conference at University Duisburg-Essen, 2011
K. LamineRealisierung funktionaler Si-Dunnfilme durch Laserkristalisation vonnanopartikularem Silizium.Bachelor Thesis, 2012
Levon Altunyan Universitat Duisburg-Essen - Fakultat fur Ingenieurwissenschaften, Nanostrukturtechnik
Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur den Einsatz in der Photovoltaik
ReferencesAbbreviations
Levon Altunyan Universitat Duisburg-Essen - Fakultat fur Ingenieurwissenschaften, Nanostrukturtechnik
Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur den Einsatz in der Photovoltaik
ReferencesAbbreviations
Ag silverAl aluminumB boronBSF back surface fieldEDX energy-dispersive x-rayη solar cell efficiencyFF fill factorHWR hot wall reactorIsc short circuit currentO oxygenP phosphorusPmpp power at maximum power pointRs equivallent parasitic series resistanceRsh equivallent parasitic parallel resistanceSEM scanning electron microscopeSi siliconVoc open circuit voltageZn zinc
:Levon Altunyan Universitat Duisburg-Essen - Fakultat fur Ingenieurwissenschaften, Nanostrukturtechnik
Evaluation von Laser-bearbeiteten Si-nanopartikeldunnfilmen fur den Einsatz in der Photovoltaik