SINTEF Wafers

• We studied two wafers. Wafer #24 and one oxygenated wafer.

PSIDevices Purdue Devices

Diode cluster

JHU Devices JHU Devices

BTev Devices

N+ side

Design A Design F

Design G

Pixel Design

Measurement

A

•We measure the total leakage current.

N

N+

P+

Wafer #24

• IV measurement on wafer 24 is complete. We are now going to wire bond it to study single pixel characteristics.

Summary

• Except Pixel 1, AI has high breakdown.

•Pixel 4 - design F , Pixel 5 - design G•Design F and G also have high breakdown voltage.

•Vbreakdown < 300 - 7 pixel arrays.• 300 < Vbreakdown < 500 - 20 pixel arrays•500 < Vbreakdown - 7 pixel arrays

•Current per unit area at 270 V - 3-6 nA/cm^2

Performance

SINTEF Oxygenated Wafer

• We measured 15 pixel arrays, Purdue and PSI designs, on the oxygenated wafer.

•Breakdown voltage is low

• Except Pixel 6, breakdown is around 250 voltage.

•Vbreakdown < 200 - 4 pixel arrays.• 200 < Vbreakdown < 250 - 10 pixel arrays•250 < Vbreakdown - 1 pixel array

•Current per unit area at 270 V - 11 nA/cm^2(Data for pixel 6 only. For all other pixel arraysVbreakdown < 250)

Performance