CBM Silicon Tracking System. Microstrip Detector Module Assembly and Test
Silicon Microstrip detector Single sided and double sided
description
Transcript of Silicon Microstrip detector Single sided and double sided
Silicon Microstrip detectorSingle sided and double sided
K.Kameswara rao, Tariq Aziz , Chendvankar , M.R.Patil Tata institute of fundamental research , Mumbai , India
Y.P.Prabhakara Rao 、 Y. Rejeena RaniBharat Electronics limited , Bangalore , India
Detector specifications
First Batch : <111> , Resistivity 2k-4kohm Single sided、 Prototype
Second Batch : <100> , Resistivity 10k-20kohm(Single sided and double sided detectors )
Third Batch : <111> , Resistivity 9k - 12kohm、Single sided
Fourth Batch : <111> , Resistivity 2k -4kohm Single sided
First Batch :• Main Features of the Detector :
11 sets of different width and pitches in one detector
Minimum Strip width of 12microns and strip pitch of 65microns for about 7.4cms long on a 4” silicon wafer.
AC coupling, Common Bias via Polyresistor High value of resistance (1.5M to 3.5Mohms ) achieved within less than 500microns of length and width of 30 to
60microns
Wafer : n type Silicon, 4inch Diameter, 300 micron thickness, FZ type
Orientation : <111>
Resistivity : 5 Kohm-cm
No. Of Independent sets of detectors : 11
Type of implantation for strips : p+
No. strips per set : 32
Polysilicon resistor value: 2 to 4 Megaohms
Dark Current ( at 100V reverse voltage ) max : 5 Microamps
MASK DESIGNS
Mask 1 : p+ Mask 5 : Opening Contacts over dc pad, bias pad Mask2 : Capacitor (Sio2) Mask 6 : MetalMask3 : Polycontact opening Mask 7 : Protective layer Mask4 : Polyresistor
First Batch
Actual Silicon Microstrip Detector
Geometry : 76mm * 47mm
Microscopic view of SILICON MICROSTRIP DETECTOR
Bias padAc padDc pad
poly
I - V Characteristics of Silicon Microstrip Detector
0
200
400
600
0 50 100 150 200 250 300 350 400 450
Voltage
Cu
rre
nt
( n
ano
am
ps
)
Set 1
Set 2
Set 3
Set 4
Set 5
Set 6
Set 7
Set 8
Set 9
Set 10
Set 11
C - V Characteristics
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50
100
150
200
250
0 20 40 60 80 100 120
Voltage
Ca
pa
cit
an
ce
( p
f )
Set 1
Set 2
Set 3
Set 4
Set 5
Set 6
Set 7
Set 8
Set 9
Set 10
Set 11
Second Batch : Detectors Produced : 1) SSD - 5 No’s 2) DSSD – SL - 10 No’s 3) DSSD – DL - 10 No’s
• Wafer crystal orientation : < 100 >• Type : FZ• Wafer thickness : 300 µm• Size : 4 inch• Resistivity : > 10 to 20 Kohm-cm• Breakdown voltage : > 300V• Polysilicon resistor value : > 4 Megaohms• Total Dark current : <= 2 microamps @ 100V• Area : 79600 x 28400• Effective Area : 76800 x 25600
Wafer specifications :
P side : No. of Masks : 10 ( double metal structure )• Number of strips : 1024 Number of Readout strips : 512 Pitch : 75 P+ strip width : 50 P+ strip length : 25600 N side : No. of Masks : 8• Number of strips : 512 Pitch : 50 N+ strip width : 12 N+ strip length : 76800 P stop with ATTOL structure• AC pad accessibility of the strips will be available with
double metal structure and as well as without double metal structure ( provision for bonding with kapton cable)
Double sided silicon detector specifications
0 20 40 60 80 100 120 140 1600
50
100
150
200
250
300
350
I - V Characteristics of SSD <100> Res. 10k to 20k Series1
Series3
Series5
Series7
Series9
Voltage(volts)
Curr
ent
(uA
)
0 20 40 60 80 100 12070
90
110
130
150
170
190
210
230
C - V Charcteristics of SSD <100>
SSD#56 SSD#57 SSD#49 SSD#63 SSD#29
Voltage (volts)
Capacitance(pf)
Double-sided Silicon Microstrip detector
n+
p+
bulk n
Al
p+ stopper
SIO2
SIO2
Al
Advantages : Two dimensional positional information
0 20 40 60 80 100 1200
20
40
60
80
100
120
140
I - V Characteristics of DSSD -SL <100> Res.10k to 20k Series1
Series3
Series5
Series7
Series9
Series11
Series13
Series15
Series17
Series19
Voltage(volts)
Curr
ent
(uA
)
0 20 40 60 80 100 12050
60
70
80
90
100
110
120
C - V Characteristics of DSSD - SL
DS-SL#44 DS-SL#46 DS-SL#10 DS-SL#65 DS-SL#41 DS-SL#16 DS-SL#66 DS-SL#28
DS-SL#18 DS-SL#42
Voltage (volts)
Capacitance (pf)
DSSD with double metal ―P –side design with all masks
Photo of P - side Via’s and Metal 2
Via’s
Photo of N side AC pads
0 20 40 60 80 100 120 140 1600
100
200
300
400
500
600
I - V Characteristics of DSSD - DL <100> Res. 10k to 20k
Series1Series3Series5Series7Series9Series11Series13Series15Series17Series19
Voltage( volts)
Curr
ent
(uA
)
0 20 40 60 80 100 120130
180
230
280
330
380
C - V Characteristics of DSSD - DL
DS-DL#36 DS-DL#32 DS-DL#32+ DS-DL#08 DS-DL#48 DS-DL#47 DS-DL#34
DS-DL#9 DS-DL#64 DS-DL#31
Voltage (volts )
Capacitance (pf)
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50
100
150
200
250
300
350
0 50 100 150 200 250
Cu
rre
nt (
mic
ro a
mp
s )
Voltage ( volts )
I - V Characteristics comparision of ssd and dssd
SSD#63
DSSD-SL#28
DSSD-DL #31
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5
10
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20
25
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45
50
I - V Characteristics of SSD <111> Res. 9k to 12k Series1
Series3
Series5
Series7
Voltage (volts )
Curr
ent
(uA
)Third Batch
Response of silicon detector with 1064nm pulsed laser Tested with single sided detector
0 50 100 150 200 250 300 350 400 4500
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Pulse height distribution
Series1
milli volts
No. of time occurred
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0.5
1
1.5
2
2.5
3
3.5
4
8004-5*8018-1*8018-2*8018-38004-78004-8
Reverse voltage ( volts )
cur
rent
( µ
amps
)
I - V characteristics of SSD with resistivity of 2-4kohm (03-03-09)
Fourth Batch
0 20 40 60 80 100 12040
50
60
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80
90
100
110
120
8004-5* 8018-1* 8018-2* 8018-3 8004-7 8004-8
Reverse voltage (volts)
capa
cita
nce
( pf )
C-V characteristics of ssd(03-03-09)
Present status
Recently developed detectors has to under go different tests。