SILICON-CONTROLLED SWITCH GATE TURN -OFF SWITCHSILICON-CONTROLLED SWITCH & GATE TURN -OFF SWITCH...

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SILICON-CONTROLLED SWITCH & GATE TURN-OFF SWITCH GATE TURN-OFF SWITCH Engr. Raymond J. Pidor, PECE

Transcript of SILICON-CONTROLLED SWITCH GATE TURN -OFF SWITCHSILICON-CONTROLLED SWITCH & GATE TURN -OFF SWITCH...

Page 1: SILICON-CONTROLLED SWITCH GATE TURN -OFF SWITCHSILICON-CONTROLLED SWITCH & GATE TURN -OFF SWITCH Engr. Raymond J. Pidor, PECE. SILICON-CONTROLLED SWITCH It is a four-layer pnpndevice

SILICON-CONTROLLED

SWITCH

&

GATE TURN-OFF SWITCH GATE TURN-OFF SWITCH

Engr. Raymond J. Pidor, PECE

Page 2: SILICON-CONTROLLED SWITCH GATE TURN -OFF SWITCHSILICON-CONTROLLED SWITCH & GATE TURN -OFF SWITCH Engr. Raymond J. Pidor, PECE. SILICON-CONTROLLED SWITCH It is a four-layer pnpndevice

SILICON-CONTROLLED SWITCH

It is a four-layer pnpn device

Its basic construction is the same with the SCR

with the addition of the second gate lead.

Anode, cathode, an anode gate, and a cathode

gate.gate.

Anode Gate

Effect: The higher the anode gate current, the

lower the required anode-to-cathode voltage to

turn the device on.

Use: Used to turn the device either on or off

Page 3: SILICON-CONTROLLED SWITCH GATE TURN -OFF SWITCHSILICON-CONTROLLED SWITCH & GATE TURN -OFF SWITCH Engr. Raymond J. Pidor, PECE. SILICON-CONTROLLED SWITCH It is a four-layer pnpndevice

CONT.

(To turn on the device, a negative pulse must be applied to the anode gate terminal, while a positive pulse is required to turn off the device.)device.)

ON: A negative pulse at the anode gate will forward-bias the base-to-emitter junction of Q1, turning it on. The resulting heavy collector current IC1, will turn on Q2, resulting in a regenerated action and the on state for the SCS device.

Page 4: SILICON-CONTROLLED SWITCH GATE TURN -OFF SWITCHSILICON-CONTROLLED SWITCH & GATE TURN -OFF SWITCH Engr. Raymond J. Pidor, PECE. SILICON-CONTROLLED SWITCH It is a four-layer pnpndevice

CONT.

OFF: A positive pulse at the anode gate will reverse-bias the base-to-emitter junction of Q1, turning it off, resulting in the open circuit “off” state of the device.

The required turn-on gate current at either The required turn-on gate current at either terminal is affected by many factors:

Operating temperature

Anode-to-cathode voltage

Load placement

Page 5: SILICON-CONTROLLED SWITCH GATE TURN -OFF SWITCHSILICON-CONTROLLED SWITCH & GATE TURN -OFF SWITCH Engr. Raymond J. Pidor, PECE. SILICON-CONTROLLED SWITCH It is a four-layer pnpndevice

CONT.

P

N

ANODE

ANODE

ANODE

ANODE

GATEN

P

N

CATHODE

CATHODE

GATE

ANODE

GATEGATE

CATHODE

CATHODE

GATE

A.) SCS BASIC

COSTRUCTIO

B.) SCS GRAPHIC

SYMBOL

Page 6: SILICON-CONTROLLED SWITCH GATE TURN -OFF SWITCHSILICON-CONTROLLED SWITCH & GATE TURN -OFF SWITCH Engr. Raymond J. Pidor, PECE. SILICON-CONTROLLED SWITCH It is a four-layer pnpndevice

SCS EQUIVALENT TRANSISTOR CIRCUIT

Anode gate

Anode

Q1

pnp

IC1

Q2

pnp

GA

CathodeIGK

Cathode

gate

pnp

Page 7: SILICON-CONTROLLED SWITCH GATE TURN -OFF SWITCHSILICON-CONTROLLED SWITCH & GATE TURN -OFF SWITCH Engr. Raymond J. Pidor, PECE. SILICON-CONTROLLED SWITCH It is a four-layer pnpndevice

THREE OF THE MORE FUNDAMENTAL

TYPES OF TURN-OFF CIRCUITS FOR THE

SCS

V

RL

A.

RL

-V

B.

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CONT.

RARL

V

ROFF

ON

C.

Page 9: SILICON-CONTROLLED SWITCH GATE TURN -OFF SWITCHSILICON-CONTROLLED SWITCH & GATE TURN -OFF SWITCH Engr. Raymond J. Pidor, PECE. SILICON-CONTROLLED SWITCH It is a four-layer pnpndevice

ADVANTAGES:

reduced turn-off time, typically within the range

1 to 10µs for the SCS and 5 to 30µs for the SCR.

Increased control and triggering sensitivity

A more predictable firing situation

Page 10: SILICON-CONTROLLED SWITCH GATE TURN -OFF SWITCHSILICON-CONTROLLED SWITCH & GATE TURN -OFF SWITCH Engr. Raymond J. Pidor, PECE. SILICON-CONTROLLED SWITCH It is a four-layer pnpndevice

ONE SIMPLE APPLICATION

(SCS ALARM CIRCUIT)

alarm

GE 344GE 344 GE 344

Input 1Input 2 Input 3

GE 3N60 GE 3N60GE 3N60

10kΩ 10kΩ10kΩ

Page 11: SILICON-CONTROLLED SWITCH GATE TURN -OFF SWITCHSILICON-CONTROLLED SWITCH & GATE TURN -OFF SWITCH Engr. Raymond J. Pidor, PECE. SILICON-CONTROLLED SWITCH It is a four-layer pnpndevice

GATE TURN-OFF SWITCH

Like an SCR, is a four layer, three junction

semiconductor device with three external

terminals, namely, the anode, the cathode and

the gate.

The main advantage of the GTO over the SCR or The main advantage of the GTO over the SCR or SCS is that it can be turned on or off by applying

the proper pulse to the cathode gate (without the

anode gate and associated circuitry required for

the SCS).

Because of its turn-off capability, there is an

increase in the magnitude of the required gate

current for triggering.

Page 12: SILICON-CONTROLLED SWITCH GATE TURN -OFF SWITCHSILICON-CONTROLLED SWITCH & GATE TURN -OFF SWITCH Engr. Raymond J. Pidor, PECE. SILICON-CONTROLLED SWITCH It is a four-layer pnpndevice

CONT.

Another distinct advantage of GTO is its

improved switching characteristics.

The turn-on time is similar to that of an SCR

(typically 1 us), but the turn-off time of about the

same duration ( 1 us) is much smaller than the same duration ( 1 us) is much smaller than the

typical turn-off time of an SCR (5 to 30 us).

The fact that the turn-off time is similar to the

turn-on time rather than considerably larger

permits the use of this device in high speed

applications.

Page 13: SILICON-CONTROLLED SWITCH GATE TURN -OFF SWITCHSILICON-CONTROLLED SWITCH & GATE TURN -OFF SWITCH Engr. Raymond J. Pidor, PECE. SILICON-CONTROLLED SWITCH It is a four-layer pnpndevice
Page 14: SILICON-CONTROLLED SWITCH GATE TURN -OFF SWITCHSILICON-CONTROLLED SWITCH & GATE TURN -OFF SWITCH Engr. Raymond J. Pidor, PECE. SILICON-CONTROLLED SWITCH It is a four-layer pnpndevice

APPLICATIONS

Counters

Pulse generators

Multivibrators

Voltage Regulators Voltage Regulators

Page 15: SILICON-CONTROLLED SWITCH GATE TURN -OFF SWITCHSILICON-CONTROLLED SWITCH & GATE TURN -OFF SWITCH Engr. Raymond J. Pidor, PECE. SILICON-CONTROLLED SWITCH It is a four-layer pnpndevice

ASSIGNMENT Search for a sample circuit using GTO for the

counter, pulse generator, multivibrator and

voltage regulator.

To be submitted next meeting.