SiC Technologies for High Reliability
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ALTER – CNM MEWS 25 Japan 2012 SiC Technologies for High Reliability MEWS25 - 2012 Power devices and Systems Group Systems Integration Department Centro Nacional de Microelectrónica, CNM CNM-CSIC, Campus Universidad Autónoma de Barcelona, 08193 Bellaterra, Barcelona, Spain Philippe Godignon [email protected] Optoelectronic and Innovation Department ALTER TECHNOLOGY C/ Majada 3 28760 Tres Cantos, Madrid, Spain Agustín Coello [email protected] [email protected]
Transcript of SiC Technologies for High Reliability
ALTER – CNM
MEWS 25 Japan 2012
SiC Technologies for High Reliability MEWS25 - 2012
Power devices and Systems Group Systems Integration Department
Centro Nacional de Microelectrónica, CNM
CNM-CSIC, Campus Universidad Autónoma de Barcelona,
08193 Bellaterra, Barcelona, Spain
Philippe Godignon [email protected]
Optoelectronic and Innovation Department
ALTER TECHNOLOGY
C/ Majada 3 28760 Tres Cantos, Madrid, Spain
Agustín Coello
ALTER – CNM
MEWS 25 Japan 2012
TÜV NORD - Overview
06/11/2012 ALTER TECHNOLOGY - TüV NORD S.A.U.
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TÜV Hannover/ Sachsen-Anhalt e.V. TÜV Nord e.V.
RWTÜV e.V. RWTÜV Stiftung
TÜV Thüringen e.V.
TÜV NORD AG Business Unit
Mobility TÜV NORD Mobilität Companies
Business Unit Industry Services TÜV NORD Systems TÜV NORD SysTec TÜV NORD EnSys Hannover TÜV NORD CERT Companies
Business Unit Training and Human Resources TÜV NORD Academies TÜV NORD Bildung Companies
Business Unit Natural Resources DMT Companies
Business Unit International TÜV NORD International Companies
Central Service Unit Administration TÜV NORD Service
TÜV Hannover/ Sachsen-Anhalt e.V. TÜV Nord e.V.
RWTÜV e.V. RWTÜV Stiftung
TÜV Thüringen e.V.
TÜV NORD AG Business Unit
Mobility TÜV NORD Mobilität Companies
Business Unit Industry Services TÜV NORD Systems TÜV NORD SysTec TÜV NORD EnSys Hannover TÜV NORD CERT Companies
Business Unit Training and Human Resources TÜV NORD Academies TÜV NORD Bildung Companies
Business Unit Natural Resources DMT Companies
Business Unit International TÜV NORD International Companies
Central Service Unit Administration TÜV NORD Service
Business Unit Aerospace
ATN - ALTER TECHNOLOGY Companies
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Parts Engineering
Procurement
Testing
Optoelectronics
Niche technologies
Capable to support any customer need worldwide
Centre of reference for the space evaluation of optoelectronics
Take advantage of advanced technologies to fill market gaps
In house capability. No third party dependance including radiation.
Skilled parts engineering team with unique EEE Parts database
BUSINESS MODEL
06/11/2012
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Outline
SiC ALTER / CNM Activities • CNM Facilities • SiC Technologies Standard technology
High temperature technology High voltage technology
• Power Switches SiC JFET
• Conclusions
CNM ACTIVITIES
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CMOS clean room – 11 furnaces: dry and wet oxidation, Al annealing, Boron diffusion … – CVD equipments: LPCVD, PECVD-TEOS, PECVD, ALD, RTCVD – Implanter 10-200keV: Ar, N, Si, As, P, B – New implanter (2008): Al,B… 0-500ºC, 2keV-200keV – Metallization : 3 sputterings (Al, AlSi, AlCu) and 1 e.gun (Al) – 3 optical photolithography (simple/double face) – 1 Stepper g-line 0.6um (1 new stepper i-line 0.35um 2008) – 2 wafer bonders – RTA (max 1150ºC, max 1900ºC) – 2 RIE, 2 ICP – Wet etch, cleaning, drying – CMP – In line measurements: ellipsometer, nanospec, profilometer, FTIR, 4 probes, SEM…
CNM FACILITIES
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– 4 « contaminated » resistive furnaces: – PECVD, RTCVD – Metallization : 2 sputtering (Al, Ni, Ti, W, Si, Cr, Pt)
(Ni, Ti, Au) and 1 e.gun (all) – 2 optical photolitography equipments (simple/double
face) – 1 RIE, 1 ICP (2008) – 1 maskless lithography equipment (2008) – 2 Electron beam lithography: Leo 1530 + Raith Elphy
plus and Raith 150-two (10nm-20nm) – 1 Nano Imprint litography Obducat NIL 4” + 1 new
2008 NPS300 from SET – 1 FIB – In line measurements: ellipsometer, nanospec, profilometer, FTIR, 4 probes, SEM… – 2 AFM
Nanotechnologies and non CMOS CNM FACILITIES
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Wide band gap: wide range of applications
Wide band gap semiconductor
Power Devices (>600V)
-High electric field -Wide Band Gap
RF Devices High carrier saturation velocity
MEMS High Young Modulus Harness
Chemical sensors Inertness
Bio-sensors Biocompability Transparency
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SiC diodes technologies
•Standard technology
•High temperature technology
•High voltage technology
SiC diodes
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1.2 kV large area diodes = 2.56 mm2 Stressed in DC at 8A (312 A.cm-2) for 50 hours
1.2kV JBS Diodes: Stability
No degradation observed: no stacking faults propagation
JBS in Schottky + bipolar mode conduction
Wafer ∅ 50 mm
SiC diodes
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Space mission BepiColombo will set off in 2013 on a journey to Mercury lasting approximately 6 years. High temperature SiC blocking diodes for solar panel arrays: series protection devices for solar cells arrays Working temperature range -170C to +300C High reliability Radiation hard Stable with thermal cycling
High temperature protection diodes for Solar Cell Panel
D+T/CNM, ALTER, Ampère, Semelab
High temperature SiC diodes
WCu
Cu
Ag bondBeO
Ni/Au
AuGe die-attachSiC die
Au wire-bonds
Ceramic through-hole
Cu alloy
Ni cap
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Diode Specifications • Operation temperature range: -170ºC / +280ºC. • Breakdown voltage >300 V over full temperature range. • Reverse current < 1 mA @ 300 V and 280ºC. • Nominal DC output current: 5 A over full temperature range. • Maximum forward voltage drop at nominal current and 280ºC: 1.7 V. • Packaged diode weight < 5 g. Diode Technology • N (5µm, 9.1015 cm-3) /N+ wafers from Cree • Multiple Al implantation for the JTE edge termination • Dopants annealed at 1,600ºC for 30 min without capping layer. • SiO2 as surface passivation layer. • Active Area: 2mmx2mm • Schottky contact: W
Electrical performances (Vf, Ir), stability with T, stability with ∆T
High temperature SiC diodes
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Wafer processing
Diodes fabrication and selection
Case (hermetic) sealing
Wire Bonding Dicing and selected diodes back side mounting
Screening/burn-in of diodes (100% of diodes)
• Confidential • High temperature storage
with biasing: 150ºC for 48h with reverse biasing
RELIABILITY TESTS
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• In the forward mode we do not detect any significant impact of the proton irradiation up to the tested fluence of 1.6e11 p/cm2 for energies of 60 MeV and 100 MeV.
• For the lowest energy, 15MeV, we observe a slight increase of the forward voltage on the 3 tested diodes, in the range of 2%.
• In the reverse mode, we can observe no significant change of the leakage current after stress
Radiation Hardness Proton irradiation Each sample has been biased @200V reverse during the test.
Gamma irradiation: no impact on the electrical characteristics up to cumulated dose of 540krad
High temperature SiC diodes
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Toward 500ºC
• Novel Schottky metal ?
• Novel back side soldering method: sintering/diffusion processes • Ag nanoparticles / sintering • Thin Au diffusion (1-5um) • Copper diffusion (Infineon)
• Novel top side interconnection
• Gold wire reliable up to 500ºC (NASA) • Copper metallization + copper bonding • Pressure contact
• Novel insulation material
• Low thermal conductivity variation with T • Compatible CTE
High temperature SiC diodes
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High voltage SiC diodes
High voltage SiC diodes
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9kV 4H-SiC Schottky and JBS Diodes
Rdiff(Schottky) ≈Repi=3Ω Rdiff (JBS) = 3.3Ω Ron×S = 120 mΩ.cm2
High voltage SiC diodes
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SmartPM X-ray demonstrator
-92 kV/42 kW
HV-Tank with transformer and demonstrator
kV ramp-up at -92 kV/203 kOhm
ENIAC SMARTPM
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SiC power switches
SiC switches
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JFETs for switching
• Normally-on • High temperature capability • Fast switching • Radiation hardness ?
SiC switches
10A-1200V
0 200 400 600 8001E-10
1E-9
1E-8
1E-7
1E-6
1E-5
1E-4
VG=-80V
T=25oC T=125oC T=200oC T=250oC T=300oC
Drai
n Cu
rren
t (A)
Drain Voltage (V)
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• JFET unipolar vertical power device • 3 terminals devices - gate control • 8 photolitographic mask levels • 2µm minimum feature size • Patented with Schneider electric
JFETs for Current Limiting
530 µm × 530 µm530 µm × 530 µm
gate
source
passivation
Drain metalization
gate metalization
source metalizationCNM/Ampère
SiC JFET
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SiC On Chip integration: Digital IC High temperature electronics
SiC Digital IC: HT
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SUMMARY
• High temperature diode technology – Mature – For 300V - 600V – Currently processing ¼ of 3” wafers – Reasonable capability : 25 4” wafers/year -> 10000
diodes/year on wafer – Production capability limited by packaging process ! – New qualification for diodes produced on full 4”
wafers and other packaging partners – High cost (Only the TO257 package cost is 50 €/part)
SiC diodes
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• High voltage JBS/Schottky technology – Mature up to 6kV – Still work to do for > 6kV – Reasonable capability : 30 4” wafers/year > 8000
dies/year – Packaging complex because very specific – Screening method needed – Need for qualification – No commercial devices
SUMMARY
SiC diodes
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• High voltage/high temperature JFET technology – Not fully mature – Need between 6-12 months before maturity
(technological repeatitivity tested) – Breakdown voltage up to 3.3kV – Normally off ? – Production capability : 20 4” wafers/year -> around
10000 10A JFETs /year – Packaging: standard or BEPI type – Need for qualification – Commercial devices up to 1700V Tj 175ºC
SUMMARY
SiC switches
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Conclusions
• CNM has large experience in SiC for many different fields with active research and a reasonable manufacturing capability.
• ALTER TECHNOLOGY has large experience in Testing High Power SiC devices for space applications.
• CNM & ALTER are working together for spreading the use of SiC technologies for space applications.
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Thank you
for your attention
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Schottky diode JBS diode
Anode: Schottky contact + Planar device + Low forward voltage + Ultra fast device - High leakage current - Low surge capability
Anode: Schottky and ohmic contact + Planar device + Low forward voltage + Very fast device + Low leakage current + High surge capability
Anode
Cathode N + Substrate
N - Drift layer : N drift
P - JTE
t drift L JTE
Passivation
t drift
Anode
Cathode N + Substrate
N - Drift layer
P - JTE
Passivation
Anode
Cathode
P +
N + Substrate
N - Drift layer : N drift
L P L N
P + P - JTE
t drift L JTE
Passivation
Anode
Cathode
P +
N + Substrate
N - Drift layer L P L N
P + P - JTE
Passivation
Standard SiC Schottky and JBS (Junction Barrier Schottky) Diodes
SiC diodes
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SiC standard Power Diode: Schottky JBS Die • Internal interconnections (wire bond, back side solder) • Package housing (Substrate, plastic cover) • External interconnections
Commercially available Schottky diodes • Ti/Al top metallization • Al wire bonding • Plastic package (TO220, SMD) • Limited to 175ºC
WCu
Cu
Ag bondBeO
Ni/Au
AuGe die-attachSiC die
Au wire-bonds
Ceramic through-hole
Cu alloy
Ni cap
SiC diodes
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3.3 kV: SiC Schottky, JBS or PiN Diodes ?
•Low BPD density starting material from Norstel for PiN and SBDs. •On-axis starting material from Linkoping Univ. • 8º off-axis material from Cree for JBS diodes
At higher voltages, the impact of stacking faults increases
High voltage SiC diodes
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