SIandAII Localized Corrosion Lecture

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    Aspects of localized corrosion:

    - pitting- galvanic

    - crevice

    1

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    Stainless Steel: conducting passive film

    Anodic reaction: in the pit

    Cathodic reaction: on the passive film + in the pit

    Cathodic area is much larger than anodic area(cathodic reaction in the pit can be neglected)

    Galvanic couplinginducesfast localized attack

    Combination: Pitting Galvanic corrosion

    Active Pits

    IntactsemiconductingPassive layer

    Stainless steel

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    Aluminum

    Aluminum alloys: insulating passive film

    Anodic reaction: in the pit

    Cathodic reaction: in the pit (or on intermetallic phases)

    No reactions on passive film

    External galvaniccoupling withintermetallics

    can inducefast localizedattack

    Active Pits

    Intact insulatingpassive layer

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    Are all the passive oxide conducting ?

    Photoelectrochemistry allows to answer this question

    - Monochromatic light of different energies (wavelength) is shinedon the material surface under electrochemical control

    - The additional current as function of the light energy is recorded

    Experimental setup

    4

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    +-

    Charge injection at semiconducting surface

    At an oxide-solution interface, an equilibrium betweenthe redox potential of the reduction reaction and theFermi level of the oxide is established

    When the surface is

    sufficiently polarized orlight is shining on thesurface, electrons canbe promoted in the

    conduction band

    W: space charge domain

    5

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    Emitted Photocurrent from a passive film

    - The fundamental model concerning the description of photoelectrochemicaleffect in a bulk semiconductor has been derived by W. Grtner.

    with : Incoming light intensity

    : Absorption coefficientL : Diffusion length of the charge carriersW: Space charge domain width

    - Obviously not all the incoming photons can successfully be converted inelectron-hole pairs, the Quantum efficiency h of a process can be formulated:

    Nel = Number of generated electronsNphot = Number of generated electrons

    Iph = q 1-e-W

    1+ L

    =Nel

    Nphot=

    Iph h

    q

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    7

    Emitted Photocurrent from a passive film II

    - The wavelength dependence of the photocurrent and the band gap Eg determination

    with h = hc/

    - For very thin semiconducting film the exponential term can be developed in a Taylor-Series

    - For a constant incoming light wavelength, the Grtner theory provides a direct relationbetween the electrochemically applied potential and the photocurrent (Ufb: flat bandpotential)

    W = (U-Ufb)1/2

    = Ah - Eg

    n

    h

    Iph resp. h

    Iph = q W

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    1.4x10-4

    1.2

    1.0

    0.8

    0.6

    0.4

    0.2

    0.0

    Photostrom[

    A]

    450400350300250

    Wellenlnge [nm]

    Insulating Ni oxideTitanium oxide

    1.4x10-4

    1.2

    1.0

    0.8

    0.6

    0.4

    0.2

    0.0

    Photostrom[

    A]

    500450400350300250

    Wellenlnge [nm]

    - Thin Ti passive oxides are semiconducting (band gap: 3eV )- Thin passive Ni oxides are isolating

    Some example of passive surfaces

    Band gap

    energy

    Maximalphotocurrent

    Photocurrent(A

    )

    Wavelength (nm)

    Ph

    otocurrent(A)

    Wavelength (nm)8

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    Substrate

    Metal - Matrixwith TiO2-Nanoparticles

    TiO2

    TiO2TiO2 TiO2

    TiO2 TiO2

    TiO2

    TiO2

    TiO2

    TiO2

    Environmental interactions:

    cleaning and bactericideeffects

    Surface functionalizing with TiO2 nanoparticles

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    0.0

    0.1

    0.2

    0.3

    0.4

    0.5

    250 300 350 400 450

    Wellenlnge des Lichts [nm]

    Photos

    trom-Intens

    itt[mA]

    abgeschiedene Nickelschicht

    Abscheidung mit Titandioxid

    verbesserter Abscheidungsprozess

    0.40 mA

    0.15 mA

    0.01 mA

    - Pure Ni (with surface oxide) does not show photoelectrochemical effects

    - Very important photoelectrochemical effect is obtained upon integration of TiO2nanoparticles (intensity smaller for agglomerated particles)

    Photoc

    urrentIntensity[mA]

    Light wavelength [nm]

    Ni electro-deposition

    Ni+ TiO2 (agglomerated)

    Ni + TiO2 (dispersed)

    Band gapenergy

    0.1 M Na2SO4 solution

    Photo-activity of TiO2 in metallic matrix

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    Semiconducting behavior of passive Steel

    All the stainless steels have semiconducting surface oxides

    The properties are

    changing with Moaddition

    Solution:

    1M Na2SO4300 mV SCE 11

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    CrNisteels

    I X5CrNi18-10X4CrNi18-12

    X6CrNiTi18-10X2CrNi19-10

    1.43011.4303

    1.45411.4306

    1818

    1819

    humid areas

    CrNiMosteels

    II X5CrNiMo17-12-2X6CrNiMoTi17-12-2

    X2CrNiMo17-12-2X3CrNiMo17-13-3X2CrNiMo18-14-3X2CrNiMoN17-11-2X2CrNiMoN17-13-3

    1.44011.4571

    1.44041.44361.44351.44061.4429

    2424

    2426273032

    mild outdoor climate,weathered

    III X2NiCrMoCu25-20-5X2CrNiMoN17-13-5

    X2CrNiMoN22-5-3

    1.45391.4439

    1.4462***)

    3537

    37

    outdoor climate, unweatheredindustrial atmosphere,weathered

    IV X1NiCrMoCuN25-20-7X1CrNiMoCuN20-18-7X2CrNiMnMoNbN25-18-5-4

    1.45291.45471.4565

    474850

    aggressive mediaindoor swimming pools,tunnels, sewage treatmentplants

    Specialmaterials

    NiCr21Mo14WNiMo16Cr15WNiMo16Cr16Ti

    2.46022.48192.4610

    (66)(68)69

    Combination of aggressivemediachemicals industr

    Type ofsteel

    Corrosionresistanceclass*)

    Abbreviated name Materialno.

    PREn**) Applications

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    Oxides and pitting susceptibilityWhen the potential of the sample surface is modified due to a

    polarization, the charge in the space charge layer can also beswitched

    a) Adsorption of Cl

    -impossible

    b) Adsorption of Cl-

    favorable

    Amount of metastable pits isinfluenced by this parameter 13

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    Mg AZ alloys and microstructure obtained

    100m

    200m

    AZ71

    as cast

    T4420C/30h

    Nominal composition:

    Mg: balance Al: 7 % (6.91% from ICP-AES) Zn: 1 % (0.84%)

    Mn: 0.11 % Ni: 0.001 % Fe.

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    - Large photocurrent intensities can beobtained for pure Mg and semi-conductingproperties of the hydroxide formed can be

    investigated

    - For the alloy, the presence of Aluminum inthe surface hydroxide suppresses thephotoelectrochemical current.

    - Al hydroxide is insulating

    200x10 -6

    150

    100

    50

    0

    Ph

    otocurrentnorm

    alized(A)

    500400300200

    Wavelength (nm)

    AZ 71 NRC T4

    Directly after Im.+ 1 hour+ 3 hours+ 3 days

    200x10-6

    150

    100

    50

    0

    Photocurren

    tnormalized(A)

    500400300200

    Wavelength (nm)

    Mg 99.95% pure

    Directly after im.

    + 1 hour+ 3 hours

    + 3 days

    Mg oxides and influence of Al in 0.01 M NaOH

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    Summary

    Most of the passive surface layers (hydroxide oroxides) are semiconductors. This is the case for Tioxide (very good catalyst), Fe, Cr, Mg (when it isstable)

    They all have a small band gap energy (2-3 eV) andgalvanic coupling of the intact passive layer withactive pits is an important factor

    There are some examples of insulating hydroxides:Al , Ni

    These passive layers are not having a galvaniccoupling influence

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    A locally increase of corrosion attack in an existinggeometrical feature (recess, hole, scratch, crack, joiningarea, welding area)

    The whole crevice surface is attacked but quite

    often the bottom region are more damaged

    Due to the corrosive attack, the crevice is widenedpossibly until breaking of the part (often solutionleakage)

    Crevice corrosion: observation

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    E l d i i

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    Examples: macro and micro-crevice

    Initial state

    SSa

    Mn

    S

    Passivefilm

    Dissolution of MnS

    SSb

    MnS

    S speziesMn2+

    Formation of Passivefilmon top of MnS

    SSc

    MnS

    Precipitation ofMn Oxide(s) and

    pushout of part of MnS

    Mn2+

    MnS

    S spezies

    SSd

    Macroscopic crevice corrosion

    are often at the joining of tubes orweld

    Microscopic crevice are the result

    of dissolution of defects like theMnS example

    Crevice corrosion susceptibility of corrosion resistant passive materials isalways higher than pitting corrosion because the unfavorable geometry isalready present

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    M h i ( l ith itti )

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    1) Crevice corrosion is the result of an active-passiveelement

    - The crevice (geometrical recess) is active

    - The material surface is passive

    a) Stagnant solution or dirt particles adsorbing Cl- anions dorexample are increasing locally the Cl- concentration

    b) High chloride contents are reached inducing pitting

    c) Hydrolysis of the corrosion products induces pH drop

    d) Autocatalytic mechanism

    Mechanisms (see analogy with pitting)

    19

    A l t f i i i t d t t d( l )

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    Example: Airplane structure

    Different areas at the bottom ofthe planes are at location where

    condensation takes place andsubjected to crevice corrosion

    White areas: mostly dryRed areas: often humid

    A lot of crevices in riveted structured(macroscale)

    20

    Comple cre ice corrosion problems

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    Corrosion found at fastenersholes and joints

    Here, not only crevice are

    present, but screws (steel)and structures (Al alloy) aremade of dissimilar materials !

    Complex crevice corrosion problems

    Crevice + galvaniccorrosion is possible

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    Other e ample of cre ice corrosion (microscale)

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    Other example of crevice corrosion (microscale)

    Poor quality ofsoldering orwelding processes

    Crevice corrosion Pitting

    0.1M NaCl solution

    Electrochemicalcell with O-rings

    For Stainless Steel

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    Crevice corrosion and coatings DLC

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    Properties of DLC

    1500-3500 HV

    temperature stability < 350 C

    very low friction and wear

    stable against acids and alkaline mediabiocompatible, haemocompatible

    Deposition by PA-CVDfrom C

    2H

    2gas

    Commercial applications:

    DLC coated hard disk, diesel compression cam plate and injector

    DLC coated screw compressor, wrist pin and gear

    Crevice corrosion and coatings DLC

    Diamond-like Carbon (DLC) coatings are ideal for applications where low friction isaimed at

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    Failure of coated medical implants

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    BUECHEL-PAPPAS HIP REPLACEMENT SYSTEM

    Its not the coating which is bad, itsthe interface that needs to beanalyzed

    Adhesion/delaminationin corrosive media ?

    cracks

    DLC

    CoCrMoor

    TiAlV

    interlayer

    Failure of coated medical implants

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    DLC coating local failure in vivo (in patients)

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    101 patients DLC/Polyethylene(PE)

    101 patients Al2O

    3/PE

    8.5 year fallow-up50% of DLC/PE failed

    Retrieved DLC-head: Numerous pits revealing the metallicsubstrate, severe PE wear

    2 m DLC

    2 m DLC-Sigradient

    ca. 60 nm Si

    Ti-Al-V

    Multilayered structuredetermined by XPS depthprofiling

    G. Taeger et al., Mat.-wiss. u. Werkstofftech. 34 (2003) 1094

    DLC coating local failure in-vivo (in patients)

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    Focused Ion Beam section on defect

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    Overview:

    Left picture: A crack at the right end of the delamination has been followedRight picture: Enlargement, several cuts needed to find the end of the

    delamination crack.

    During cutting a part of DLC delaminated (right picture).

    Focused Ion Beam section on defect

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    Detail of the crevice corrosion attack (nanoscale)

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    - The first 50 nm above the TiAlV substrate are more or less totally corroded away(the smooth round shape of the corroding tip indicate that it is not a crack growth)

    - Silicon is not stable in vivo due to crevice corrosion and the related local aggressive

    media that can be established. It is important to note that this very well knownphenomenon is not predictable by simple thermodynamic consideration !

    TiAlV

    DLC-Si

    Si

    Detail of the crevice corrosion attack (nanoscale)

    Silicon Pourbaix Diagram

    27

    Artificial crevice setup

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    In order to investigate the corrosion mechanisms in pitsand crevices, it is possible to use a model experimentalsetup called artificial crevice.

    It is a plate (foil)

    of the material of interest(thickness: t, width: w)pressed between twotransparent plastic sheets

    This crevice (depth ) isconnected to anelectrochemical system

    (working electrode)

    Artificial crevice setup

    Front View Side View

    Al alloysheet

    Plastic

    sheet

    t

    w

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    Potential evolution in crevice

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    The total potential drop between the reference electrode and

    the bottom of the crevice can be formulated by

    Potential evolution in crevice

    iRsrtot EEEE ++=

    Plastic Plastic

    Metal

    Plastic PlasticMetal

    depth

    width

    tot: total potential drop

    r: potential difference betweenreference electrode and noncorroding surface

    s: surface overpotential

    iR: ohmic potential drop

    Ref.ele

    ctrode

    r

    Ref.ele

    ctrode

    i

    R

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    The different potentials in detail

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    The different potentials in detail

    )/log(oasiiE =

    The surface overpotential is simply given by the Butler Volmer relation

    The iR drop contribution is given by the ohms law

    The measurable potential difference can be then

    expressed in terms of all the parameters

    RiE netiR =

    RiiAE netnettot ++= )85.0/log(

    )log( or iEA = 30

    Experimental investigation: example of Aluminum

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    Experimental investigation: example of Aluminum

    It is not possible to measure all the components of thepotential individually

    But if the net current can be determined, then the d ifferent

    components can be discussed

    The following procedureis used.

    Apply a certain potential.In this case, it was startedat 0V SCE and the potentialwas gradually decreased

    The dissolution rate canbe measured optically through

    the transparent walls

    10-6

    10-5

    10-4

    10-3

    10-2

    10-1

    100

    101

    -1 -0.8 -0.6 -0.4 -0.2 0 0.2

    Curre

    ntDensity(A

    /cm2)

    Potential V (SCE)

    99.99 Al

    Al - 1.9 Cu

    Al - 3.9 Cu

    0.2 Cu

    0.022 Cu

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    The potential evolution: part II

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    The potential evolution: part II

    The dissolution current is related to the dissolve d depththrough the total charge Qano:

    o is the dissolved depth for a given condition

    The measured charge

    is different

    Because of the cathodicReaction occuring in thecrevice

    MnFwtQano /0=

    cathanonetQQQ =

    anonet QQ = 85.00

    0.2

    0.4

    0.6

    0.8

    1

    1.2

    -2 -1.5 -1 -0.5 0 0.5 1 1.5

    Curren

    tDensity(A/cm

    2)

    Potential V (SCE)

    Data

    iR

    s

    Al

    0.02 Cu

    r

    0.2 Cu

    1.9 Cu

    3.9 Cu

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    Avoid macroscopic crevice corrosion

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    Avoid macroscopic crevice corrosion

    The same precautions as for pitting corrosion areapplicable

    Avoid the presence of deposits, dirt, lime

    Conception mistakesavoid deep and narrowrecesses as well areas with stagnant solution

    To avoid

    solution

    Crevice in welds

    Optimized process !

    Welded from both sides

    solution

    33