SIandAII Localized Corrosion Lecture
Transcript of SIandAII Localized Corrosion Lecture
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Aspects of localized corrosion:
- pitting- galvanic
- crevice
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Stainless Steel: conducting passive film
Anodic reaction: in the pit
Cathodic reaction: on the passive film + in the pit
Cathodic area is much larger than anodic area(cathodic reaction in the pit can be neglected)
Galvanic couplinginducesfast localized attack
Combination: Pitting Galvanic corrosion
Active Pits
IntactsemiconductingPassive layer
Stainless steel
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Aluminum
Aluminum alloys: insulating passive film
Anodic reaction: in the pit
Cathodic reaction: in the pit (or on intermetallic phases)
No reactions on passive film
External galvaniccoupling withintermetallics
can inducefast localizedattack
Active Pits
Intact insulatingpassive layer
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Are all the passive oxide conducting ?
Photoelectrochemistry allows to answer this question
- Monochromatic light of different energies (wavelength) is shinedon the material surface under electrochemical control
- The additional current as function of the light energy is recorded
Experimental setup
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+-
Charge injection at semiconducting surface
At an oxide-solution interface, an equilibrium betweenthe redox potential of the reduction reaction and theFermi level of the oxide is established
When the surface is
sufficiently polarized orlight is shining on thesurface, electrons canbe promoted in the
conduction band
W: space charge domain
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Emitted Photocurrent from a passive film
- The fundamental model concerning the description of photoelectrochemicaleffect in a bulk semiconductor has been derived by W. Grtner.
with : Incoming light intensity
: Absorption coefficientL : Diffusion length of the charge carriersW: Space charge domain width
- Obviously not all the incoming photons can successfully be converted inelectron-hole pairs, the Quantum efficiency h of a process can be formulated:
Nel = Number of generated electronsNphot = Number of generated electrons
Iph = q 1-e-W
1+ L
=Nel
Nphot=
Iph h
q
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Emitted Photocurrent from a passive film II
- The wavelength dependence of the photocurrent and the band gap Eg determination
with h = hc/
- For very thin semiconducting film the exponential term can be developed in a Taylor-Series
- For a constant incoming light wavelength, the Grtner theory provides a direct relationbetween the electrochemically applied potential and the photocurrent (Ufb: flat bandpotential)
W = (U-Ufb)1/2
= Ah - Eg
n
h
Iph resp. h
Iph = q W
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1.4x10-4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Photostrom[
A]
450400350300250
Wellenlnge [nm]
Insulating Ni oxideTitanium oxide
1.4x10-4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Photostrom[
A]
500450400350300250
Wellenlnge [nm]
- Thin Ti passive oxides are semiconducting (band gap: 3eV )- Thin passive Ni oxides are isolating
Some example of passive surfaces
Band gap
energy
Maximalphotocurrent
Photocurrent(A
)
Wavelength (nm)
Ph
otocurrent(A)
Wavelength (nm)8
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Substrate
Metal - Matrixwith TiO2-Nanoparticles
TiO2
TiO2TiO2 TiO2
TiO2 TiO2
TiO2
TiO2
TiO2
TiO2
Environmental interactions:
cleaning and bactericideeffects
Surface functionalizing with TiO2 nanoparticles
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0.0
0.1
0.2
0.3
0.4
0.5
250 300 350 400 450
Wellenlnge des Lichts [nm]
Photos
trom-Intens
itt[mA]
abgeschiedene Nickelschicht
Abscheidung mit Titandioxid
verbesserter Abscheidungsprozess
0.40 mA
0.15 mA
0.01 mA
- Pure Ni (with surface oxide) does not show photoelectrochemical effects
- Very important photoelectrochemical effect is obtained upon integration of TiO2nanoparticles (intensity smaller for agglomerated particles)
Photoc
urrentIntensity[mA]
Light wavelength [nm]
Ni electro-deposition
Ni+ TiO2 (agglomerated)
Ni + TiO2 (dispersed)
Band gapenergy
0.1 M Na2SO4 solution
Photo-activity of TiO2 in metallic matrix
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Semiconducting behavior of passive Steel
All the stainless steels have semiconducting surface oxides
The properties are
changing with Moaddition
Solution:
1M Na2SO4300 mV SCE 11
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CrNisteels
I X5CrNi18-10X4CrNi18-12
X6CrNiTi18-10X2CrNi19-10
1.43011.4303
1.45411.4306
1818
1819
humid areas
CrNiMosteels
II X5CrNiMo17-12-2X6CrNiMoTi17-12-2
X2CrNiMo17-12-2X3CrNiMo17-13-3X2CrNiMo18-14-3X2CrNiMoN17-11-2X2CrNiMoN17-13-3
1.44011.4571
1.44041.44361.44351.44061.4429
2424
2426273032
mild outdoor climate,weathered
III X2NiCrMoCu25-20-5X2CrNiMoN17-13-5
X2CrNiMoN22-5-3
1.45391.4439
1.4462***)
3537
37
outdoor climate, unweatheredindustrial atmosphere,weathered
IV X1NiCrMoCuN25-20-7X1CrNiMoCuN20-18-7X2CrNiMnMoNbN25-18-5-4
1.45291.45471.4565
474850
aggressive mediaindoor swimming pools,tunnels, sewage treatmentplants
Specialmaterials
NiCr21Mo14WNiMo16Cr15WNiMo16Cr16Ti
2.46022.48192.4610
(66)(68)69
Combination of aggressivemediachemicals industr
Type ofsteel
Corrosionresistanceclass*)
Abbreviated name Materialno.
PREn**) Applications
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Oxides and pitting susceptibilityWhen the potential of the sample surface is modified due to a
polarization, the charge in the space charge layer can also beswitched
a) Adsorption of Cl
-impossible
b) Adsorption of Cl-
favorable
Amount of metastable pits isinfluenced by this parameter 13
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Mg AZ alloys and microstructure obtained
100m
200m
AZ71
as cast
T4420C/30h
Nominal composition:
Mg: balance Al: 7 % (6.91% from ICP-AES) Zn: 1 % (0.84%)
Mn: 0.11 % Ni: 0.001 % Fe.
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- Large photocurrent intensities can beobtained for pure Mg and semi-conductingproperties of the hydroxide formed can be
investigated
- For the alloy, the presence of Aluminum inthe surface hydroxide suppresses thephotoelectrochemical current.
- Al hydroxide is insulating
200x10 -6
150
100
50
0
Ph
otocurrentnorm
alized(A)
500400300200
Wavelength (nm)
AZ 71 NRC T4
Directly after Im.+ 1 hour+ 3 hours+ 3 days
200x10-6
150
100
50
0
Photocurren
tnormalized(A)
500400300200
Wavelength (nm)
Mg 99.95% pure
Directly after im.
+ 1 hour+ 3 hours
+ 3 days
Mg oxides and influence of Al in 0.01 M NaOH
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Summary
Most of the passive surface layers (hydroxide oroxides) are semiconductors. This is the case for Tioxide (very good catalyst), Fe, Cr, Mg (when it isstable)
They all have a small band gap energy (2-3 eV) andgalvanic coupling of the intact passive layer withactive pits is an important factor
There are some examples of insulating hydroxides:Al , Ni
These passive layers are not having a galvaniccoupling influence
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A locally increase of corrosion attack in an existinggeometrical feature (recess, hole, scratch, crack, joiningarea, welding area)
The whole crevice surface is attacked but quite
often the bottom region are more damaged
Due to the corrosive attack, the crevice is widenedpossibly until breaking of the part (often solutionleakage)
Crevice corrosion: observation
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E l d i i
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Examples: macro and micro-crevice
Initial state
SSa
Mn
S
Passivefilm
Dissolution of MnS
SSb
MnS
S speziesMn2+
Formation of Passivefilmon top of MnS
SSc
MnS
Precipitation ofMn Oxide(s) and
pushout of part of MnS
Mn2+
MnS
S spezies
SSd
Macroscopic crevice corrosion
are often at the joining of tubes orweld
Microscopic crevice are the result
of dissolution of defects like theMnS example
Crevice corrosion susceptibility of corrosion resistant passive materials isalways higher than pitting corrosion because the unfavorable geometry isalready present
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M h i ( l ith itti )
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1) Crevice corrosion is the result of an active-passiveelement
- The crevice (geometrical recess) is active
- The material surface is passive
a) Stagnant solution or dirt particles adsorbing Cl- anions dorexample are increasing locally the Cl- concentration
b) High chloride contents are reached inducing pitting
c) Hydrolysis of the corrosion products induces pH drop
d) Autocatalytic mechanism
Mechanisms (see analogy with pitting)
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A l t f i i i t d t t d( l )
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Example: Airplane structure
Different areas at the bottom ofthe planes are at location where
condensation takes place andsubjected to crevice corrosion
White areas: mostly dryRed areas: often humid
A lot of crevices in riveted structured(macroscale)
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Comple cre ice corrosion problems
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Corrosion found at fastenersholes and joints
Here, not only crevice are
present, but screws (steel)and structures (Al alloy) aremade of dissimilar materials !
Complex crevice corrosion problems
Crevice + galvaniccorrosion is possible
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Other e ample of cre ice corrosion (microscale)
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Other example of crevice corrosion (microscale)
Poor quality ofsoldering orwelding processes
Crevice corrosion Pitting
0.1M NaCl solution
Electrochemicalcell with O-rings
For Stainless Steel
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Crevice corrosion and coatings DLC
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Properties of DLC
1500-3500 HV
temperature stability < 350 C
very low friction and wear
stable against acids and alkaline mediabiocompatible, haemocompatible
Deposition by PA-CVDfrom C
2H
2gas
Commercial applications:
DLC coated hard disk, diesel compression cam plate and injector
DLC coated screw compressor, wrist pin and gear
Crevice corrosion and coatings DLC
Diamond-like Carbon (DLC) coatings are ideal for applications where low friction isaimed at
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Failure of coated medical implants
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BUECHEL-PAPPAS HIP REPLACEMENT SYSTEM
Its not the coating which is bad, itsthe interface that needs to beanalyzed
Adhesion/delaminationin corrosive media ?
cracks
DLC
CoCrMoor
TiAlV
interlayer
Failure of coated medical implants
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DLC coating local failure in vivo (in patients)
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101 patients DLC/Polyethylene(PE)
101 patients Al2O
3/PE
8.5 year fallow-up50% of DLC/PE failed
Retrieved DLC-head: Numerous pits revealing the metallicsubstrate, severe PE wear
2 m DLC
2 m DLC-Sigradient
ca. 60 nm Si
Ti-Al-V
Multilayered structuredetermined by XPS depthprofiling
G. Taeger et al., Mat.-wiss. u. Werkstofftech. 34 (2003) 1094
DLC coating local failure in-vivo (in patients)
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Focused Ion Beam section on defect
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Overview:
Left picture: A crack at the right end of the delamination has been followedRight picture: Enlargement, several cuts needed to find the end of the
delamination crack.
During cutting a part of DLC delaminated (right picture).
Focused Ion Beam section on defect
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Detail of the crevice corrosion attack (nanoscale)
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- The first 50 nm above the TiAlV substrate are more or less totally corroded away(the smooth round shape of the corroding tip indicate that it is not a crack growth)
- Silicon is not stable in vivo due to crevice corrosion and the related local aggressive
media that can be established. It is important to note that this very well knownphenomenon is not predictable by simple thermodynamic consideration !
TiAlV
DLC-Si
Si
Detail of the crevice corrosion attack (nanoscale)
Silicon Pourbaix Diagram
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Artificial crevice setup
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In order to investigate the corrosion mechanisms in pitsand crevices, it is possible to use a model experimentalsetup called artificial crevice.
It is a plate (foil)
of the material of interest(thickness: t, width: w)pressed between twotransparent plastic sheets
This crevice (depth ) isconnected to anelectrochemical system
(working electrode)
Artificial crevice setup
Front View Side View
Al alloysheet
Plastic
sheet
t
w
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Potential evolution in crevice
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The total potential drop between the reference electrode and
the bottom of the crevice can be formulated by
Potential evolution in crevice
iRsrtot EEEE ++=
Plastic Plastic
Metal
Plastic PlasticMetal
depth
width
tot: total potential drop
r: potential difference betweenreference electrode and noncorroding surface
s: surface overpotential
iR: ohmic potential drop
Ref.ele
ctrode
r
Ref.ele
ctrode
i
R
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The different potentials in detail
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The different potentials in detail
)/log(oasiiE =
The surface overpotential is simply given by the Butler Volmer relation
The iR drop contribution is given by the ohms law
The measurable potential difference can be then
expressed in terms of all the parameters
RiE netiR =
RiiAE netnettot ++= )85.0/log(
)log( or iEA = 30
Experimental investigation: example of Aluminum
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Experimental investigation: example of Aluminum
It is not possible to measure all the components of thepotential individually
But if the net current can be determined, then the d ifferent
components can be discussed
The following procedureis used.
Apply a certain potential.In this case, it was startedat 0V SCE and the potentialwas gradually decreased
The dissolution rate canbe measured optically through
the transparent walls
10-6
10-5
10-4
10-3
10-2
10-1
100
101
-1 -0.8 -0.6 -0.4 -0.2 0 0.2
Curre
ntDensity(A
/cm2)
Potential V (SCE)
99.99 Al
Al - 1.9 Cu
Al - 3.9 Cu
0.2 Cu
0.022 Cu
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The potential evolution: part II
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The potential evolution: part II
The dissolution current is related to the dissolve d depththrough the total charge Qano:
o is the dissolved depth for a given condition
The measured charge
is different
Because of the cathodicReaction occuring in thecrevice
MnFwtQano /0=
cathanonetQQQ =
anonet QQ = 85.00
0.2
0.4
0.6
0.8
1
1.2
-2 -1.5 -1 -0.5 0 0.5 1 1.5
Curren
tDensity(A/cm
2)
Potential V (SCE)
Data
iR
s
Al
0.02 Cu
r
0.2 Cu
1.9 Cu
3.9 Cu
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Avoid macroscopic crevice corrosion
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Avoid macroscopic crevice corrosion
The same precautions as for pitting corrosion areapplicable
Avoid the presence of deposits, dirt, lime
Conception mistakesavoid deep and narrowrecesses as well areas with stagnant solution
To avoid
solution
Crevice in welds
Optimized process !
Welded from both sides
solution
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