Shingai factory - Home | Hamamatsu Photonics€œChina”), Hamamatsu Photonics founded the Chinese...

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Transcript of Shingai factory - Home | Hamamatsu Photonics€œChina”), Hamamatsu Photonics founded the Chinese...

Page 1: Shingai factory - Home | Hamamatsu Photonics€œChina”), Hamamatsu Photonics founded the Chinese sales company called Hamamatsu Photonics (China) Co., Ltd. (totally funded by Hamamatsu)
Page 2: Shingai factory - Home | Hamamatsu Photonics€œChina”), Hamamatsu Photonics founded the Chinese sales company called Hamamatsu Photonics (China) Co., Ltd. (totally funded by Hamamatsu)
Page 3: Shingai factory - Home | Hamamatsu Photonics€œChina”), Hamamatsu Photonics founded the Chinese sales company called Hamamatsu Photonics (China) Co., Ltd. (totally funded by Hamamatsu)

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Shingai factory

Building where Hamamatsu Photonics (China) Co., Ltd is located

As the mass production factory for the post-process assembly of opto-semiconductors handled by the Solid State Division of Hamamatsu Photonics, the Shingai Factory (Shingai-cho, Minami-ku, Hamamatsu City, Japan) has started operation from August 1, 2011.The Solid State Division of Hamamatsu Photonics manufactures a wide variety of products most of which are in small quantities. Since this requires a large number of different equipment and machines for production, the Mitsue Factory (Mitsue, Iwata City, Japan) that handles post-process assembly became hard-pressed for space. This led to acquisition and operation of the Shingai Factory in order to expand production capability.The Solid State Division must meet customer demands for low-cost products. The new Shingai Factory was rated as fully capable of handling mass production needs for assembly of low-cost products to satisfy customer price needs, and so mass production of some products will be shifted there from the Mitsue Factory. Products shifting over to the new plant will include photo IC and LED for general electronic equipment and offi ce machines, as well as Si photodiodes for X-ray non-destructive inspection, rotary encoders, and FA (factory automation). The annual production volume for these opto-semiconductor devices is predicted to reach some 20 million units for the fi rst year produced by a workforce of about 60 employees. The Mitsue Factory, on the other hand, will serve mainly as an assembly plant for high-variety, low-volume, high-precision, high-density, value-added products such as receiver devices for optical communication, image sensors, and Si photodiodes for X-ray CT scanners. Work on developing new production technologies including assembly technology, production process design, and production equipment design is also being carried out at the same time.The Shingai Factory is also scheduled to start production in the summer of 2012 of transmitter/receiver devices for MOST (Media Oriented Systems Transport) which is the high-speed, in-vehicle LAN standards employed in European luxury cars. The MOST standards use plastic optical fi bers that offer light weight and high-speed data transmission with a higher resistance to noise compared to metal wire harnesses. This will help vehicles use more information and reduce the weight of components. The MOST standards are expected to spread to many car models in future years and likely lead to highly expanded sales, so we are expected to ship some 50 million units a year after several years.

Startup of new opto-semiconductor post-process production plant

To cope with rapidly expanding product demand within the People’s Republic of China (hereafter “China”), Hamamatsu Photonics founded the Chinese sales company called Hamamatsu Photonics (China) Co., Ltd. (totally funded by Hamamatsu) on July 20, 2011 to expand sales and provide full technical services to customers.After requests from China for technical support, Hamamatsu Photonics decided to start a business in China in 1988 and founded Beijing Hamamatsu Photon Techniques Inc. (hereafter, Beijing-Hamamatsu) jointly with Beijing Nuclear Instrument Factory (BNIF). Beijing-Hamamatsu serves as a production and sales base of photomultiplier tubes, etc. with current annual sales of 130 million yuan in the domestic Chinese market. On the other hand, direct business between Hamamatsu Photonics and China has resulted in annual sales of approximately 230 million yuan, and demand in the Chinese market continues to expand year by year. The main push behind this is a trend where customers in the US and Europe have been establishing their production bases in China over the last several years and are now starting to set up low-cost product development operations to meet domestic demand in China, along with the fact that Chinese companies are also beginning to grow.This situation has created the need for sales and technical support to meet customer requirements and led to our establishing a sales subsidiary inside China. We also have future plans to set up a product development system to respond to product needs in China.Along with sales of Hamamatsu Photonics products inside China, this new sales company will also export products developed at Beijing-Hamamatsu (our local subsidiary manufacturing company) to markets throughout Asia. Projected sales for the first year are 350 million yuan for Hamamatsu Photonics products and 100 million yuan for Beijing-Hamamatsu products, so an annual total sales of 450 million yuan is targeted. We plan to increase sales by about 20% a year, and after 5 years are expected to reach 780 million yuan. To achieve these sales fi gures we plan to open a Shanghai branch of our new sales company in June, 2012 and plan to also open company branches in Chengdu, Chongqing and Shaanxi in the future. Sales people at Beijing-Hamamatsu and employees at the Beijing offi ce of Hamamatsu Photonics will be shifted to the new sales company and, along with new employees, will be the start of a 40- member organization that is scheduled to reach 70 to 80 members about 3 years from now.

Hamamatsu Photonics (China) Co., Ltd. established to meet growing domestic product demand in China

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Infrared detector

Thermopile detector

Opto-semiconductor

Applications

Gas analysis

Features

High sensitivity in 3 to 5 µm spectral bandCompact package (TO-18)High-speed responseResistance has small temperature dependence.

Left: Single-element type T11262-01Second from left: Dual type T11722-01Second from right: Linear type T11263-16, T11263-32 (identical in shape)Right: Area type T11264-08

Sensors suitable for energy saving and security devices

Using silicon-based materials, these sensors are designed to deliver high sensitivity and high reliability. To meet diverse application needs, these sensors are available in a wide product lineup due to MEMS technology, including single-element type, dual-element type, and array type. Linear and area types provide high added value and offer low cost due to CMOS circuit technology.

Single-element type T11262-01 Dual-element type T11722-01 Linear array T11263-16/-32, Area array T11264-08

The T11262-01 is a high-sensitivity thermopile detector suitable for gas analysis applications. It can be used to detect various kinds of gases by attaching an external band-pass fi lter.

The T11722-01 is a dual-element type thermopile detector designed to detect CO2 concentrations with high accuracy.

Hamamatsu provides a 16-element linear array, 32-element linear array, and 8 x 8 element area array. Since a preamp is mounted in the same package, external noise can be reduced and the latter stage circuit confi guration simplifi ed.

Applications

CO2 concentrat ion detection (automatic room ventilation, exhaust gas inspection, photosynthesis control in agriculture, etc.)

Features

Detects CO2 concentrations with high accuracySimultaneously detects two wavelengths using two sensor elements for CO2 absorption wavelength (4.3 µm) and reference wavelength (3.9 µm)

Features

T11263-16: 16 elementsT11263-32: 32 elements T11264-08: 8 x 8 elementsNon-cooled Compact packageWide spectral response range (band-pass fi lter is used to select specifi c wavelength)

Applications

Temperature profile detection on FA line (food production line, etc.)Area temperature detectionHuman body position detection

Evaluation module for array type

Please contact us for the release schedule of these products.

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Infrared detector

InAsSb photovoltaic detector P11120-201

Opto-semiconductor

High-speed response and high sensitivity in 5 µm spectral bandTE-cooled infrared detector with no liquid nitrogen required

The P11120-201 is an infrared detector that provides high sensitivity in the 5 µm spectral band due to our unique crystal growth technology. The InAsSb photovoltaic detector has a PN junction that ensures high-speed response and high reliability.Typical applications include gas analysis such as CO2, SOx, CO and NOx. Unlike the P11120-901 metal dewar type detector, the P11120-201 is easy to use as it uses a compact package (TO-8) not requiring liquid nitrogen.

Infrared detector

InGaAs PIN photodiode G11777-003PSurface mount type COB (chip on board) package

The G11777-003P is a small, near- infrared detector available in a surface mount COB package. Its size is drastically reduced compared to the previous metal package type (G8376-03). In addition to optical communication, other applications include analysis and measurement utilizing near-infrared light.

Features

High-speed response High sensitivityHigh reliabilityCompact package (TO-8, two-stage TE-cooled type)Environment-friendly due to use of InAsSbCan be assembled in a module with QCL (quantum cascade laser)

Applications

Gas analysisRadiation thermometersThermal imaging

Remote sensingFTIRSpectrophotometry

Parameter Symbol Condition Min. Typ. Max. Unit

Spectral response range λ Td=-30 °C - 1.0 to 5.9 - µm

Peak sensitivity wavelength λp Td=-30 °C 4.0 4.9 - µm

Photosensitivity S λ=λp, Td=-30 °C 0.8 1.6 - A/W

Shunt resistance Rsh VR=10 mV Td=-30 °C 10 13 - Ω

Detectivity D*(λp, 600, 1) Td=-30 °C 3.5 × 109 5.0 × 109 - cm·Hz1/2/W

Noise equivalent power NEP λ=λp, Td=-30 °C - 1.8 × 10-11 2.5 × 10-11 W/Hz1/2

Applications

Compact measuring devicesGas analysisLight level monitors

Features

Low noiseHigh sensitivityHigh-speed responsePhotosensitive area: φ0.3 mmSurface mount typeSmall size COB packageLow costCompatible with lead-free refl ow soldering

Parameter Symbol Condition Min. Typ. Max. Unit

Spectral response range λ - 0.9 to 1.7 - µm

Peak sensitivity wavelength λp - 1.55 - µm

Photosensitivity S λ=λp 0.75 0.95 - A/W

Dark current ID VR=5 V - 0.1 0.8 nA

Please contact us for the release schedule of these products.

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Visible light sensor

Si APD S11670-01

Opto-semiconductor

Small Si APD with 635 nm band-pass fi lter for optical rangefi nders

The S11670-01 is a Si APD with a band-pass fi lter for 635 nm light sources which are widely used for optical rangefinders. The S11670-01 uses a subminiature surface mount package and operates at a low bias voltage, making it suitable for applications such as portable distance meters.

Image sensor

CCD linear image sensor S11151-2048Front-illuminated CCD linear image sensor with high UV sensitivity

The S11151-2048 is a front-illuminated CCD linear image sensor with high sensitivity and high resistance to UV light. It is suitable for spectrophotometry.

Features

635 nm band-pass fi lter attachedPhotosensitive area: φ0.1 mmSmall package: 2.0 × 1.3 × 0.8 mmLow-bias operation (breakdown voltage: 100 V max.)High-speed response (cutoff frequency: 1 GHz min.)

Applications

Optical rangefi nders

Applications

Spectrophotometry, etc.

Features

Low dark currentLow image lagHigh sensitivity in UV (spectral response range: 200 to 1000 nm)Pixel size: 14 x 200 µm2048 pixels

Spectral response (typical example)

KAPDB0203EA

Parameter Specifi cation Unit

Number of pixels 2048 pixels

Pixel pitch 14 µm

Pixel height 200 µm

Photosensitive area length 28.672 mm

Data rate 2 max. MHz

Spectral response (without window, typical example)

KMPDB0315EB

Wavelength (nm)

(Ta=25 °C)

Rel

ativ

e se

nsi

tivi

ty (

%)

0

100

80

60

40

20

1100300 400 500 600 700 800 900 1000

Wavelength (nm)

(Ta=25 °C)

Qu

antu

m e

ffic

ien

cy (

%)

0

100

80

60

40

20

1200200 400 600 800 1000

Please contact us for the release schedule of these products.

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Opto-semiconductor

Image sensor

CMOS linear image sensor S11106, S11107Compact size and high cost-performance

The S11106 and S11107 are resin-sealed CMOS linear image sensors that deliver a video data rate of 10 MHz and consume a low amount of current.

Features

Resin-sealed type, surface mount package:2.4 x 9.1 x 1.6t mmPixel sizeS11106: 63.5 x 63.5 µm (400 dpi), 128 pixelsS11107: 127 x 127 µm (200 dpi), 64 pixelsVideo data rate: 10 MHz max.3 V or 5 V single power supply operationElectronic shutter functionLow current consumption

Parameter S11106 S11107 Unit

Number of pixels 128 64 -

Pixel pitch 63.5 127 µm

Pixel height 63.5 127 µm

Photosensitive area length mm

Spectral response range 400 to 1000 nm

Applications

Rotary encodersImage reading

Position detectionObject measurement

Image sensor

CMOS linear image sensor S11638Achieves high sensitivity by adding an amplifi er to each pixel

The S11638 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. Compared to the previous types, the S11638 offers high sensitivity and high resistance to UV light.

Features

High sensitivity: 160 V/(lx·s)Electronic shutter function5 V single power supply operationVideo data rate: 10 MHz max.Conversion effi ciency: 13 µV/e-

High UV sensitivity

Applications

Position detectionImage readingEncodersBarcode readersSpectrophotometry

Parameter Specifi cation Unit

Number of pixels 2048 pixels

Pixel pitch 14 µm

Pixel height 42 µm

Photosensitive area length 28.672 mm

Spectral response range 200 to 1000 nm

Please contact us for the release schedule of these products.

Please contact us for the releaseschedule of these products.

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Image sensor

CMOS area image sensor S11661, S11662APS (active pixel sensor) type with high near-infrared sensitivity

The S11661 and S11662 are APS (active pixel sensor) type CMOS area image sensors with high sensitivity in the near- infrared region. The S11661 is an SXGA format type (1280 x 1024 pixels), and the S11662 is a VGA format type (640 x 480 pixels). Both types include a timing generator, a bias generator and an A/D converter, and offer digital input/output for easy handling.

Features

S11661: 1280 x 1024 pixelsS11662: 640 x 480 pixelsPixel size: 7.4 x 7.4 µmRolling/global shutter readout3.3 V single power supply operationHigh-speed partial readout function

Applications

Security (infrared camera, fi nger vein certifi cation)Position and shape recognition of infrared light spot

Opto-semiconductor

Spectral response (typical example)

KMPDB0363EA

(Ta=25 °C)

0

5 × 1012

1 × 1013

1.5 × 1013

2 × 1013

2.5 × 1013

Ph

oto

sen

siti

vity

(V

/J)

Wavelength (nm)

200 400 600 800 1000 1200

Previous product

S11661, S11662

Image sensor

InGaAs linear image sensor G12230-512DBHybrid-structure linear image sensor (two 256-pixel photodiode arrays with different spectral response ranges)

The G12230-512DB is a hybrid-structure linear image sensor having two 256-pixel back-illuminated InGaAs photodiode arrays with spectral response ranges of 0.95 to 1.7 µm and 1.4 to 2.2 µm, which are bump-bonded to a single CMOS readout circuit. This new structure allows high S/N over a broad spectral response range from 0.95 to 2.2 µm.

Features

Spectral response range: 0.95 to 2.2 µmTwo 256-pixel photodiode arrays with spectral response ranges of 0.95 to 1.7 µm and 1.4 to 2.2 µmLow dark currentLow linearity errorPixel height: 250 µm, pixel pitch: 25 µm

Applications

SpectrophotometryAnalysis and measurement

Spectral response (typical example)

Parameter Symbol Min. Typ. Max. Unit

Spectral response range λ - 0.95 to 2.2 - µm

Conversion effi ciency CE - 16 - nV/e-

Photoresponse nonuniformity PRNU - ±10 - %

Data rate f - 0.5 1 MHz

Wavelength ( m)

(Ta=25 °C)

Ph

oto

sen

siti

vity

(A

/W)

0

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4

Left: S11661, Right: S11662

KMIRB0065EA

Please contact us for the release schedule of these products.

Please contact us for the release schedule of these products.

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Opto-semiconductor

Image sensor

Si/InGaAs linear image sensor G12231-1024DFSilicon and InGaAs hybrid linear image sensor

The G12231-1024DF is a unique image sensor that connects a back-illuminated InGaAs photodiode array to a CMOS image sensor by fl ip chip bonding to achieve a wide spectral response range.

Features

Spectral response range: 0.4 to 1.7 µmSi linear image sensor (768 pixels, 25 µm pitch) + InGaAs linear image sensor (256 pixels, 25 µm pitch)Pixel height: 500 µmContinuous spectrum acquisitionOptimal S/N at detection wavelength

Applications

Spectrophotometry

Spectral response (typical example)

KMIRB0064EA

Parameter Min. Typ. Max. Unit

Spectral response range - 0.4 to 1.7 - µm

Number of pixels - 1024 - pixels

Wavelength ( m)

(Ta=25 °C)

Ph

oto

sen

siti

vity

(A

/W)

0

1.0

0.8

0.6

0.4

0.2

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

Image sensor

InGaAs area image sensor G12242-0707WNear-infrared area image sensor inTO-8 package

The G12242-0707W is a high-resolution, near-infrared area image sensor that consists of a back-illuminated InGaAs photodiode array bump-connected to a CMOS readout circuit (ROIC: readout integrated circuit).The internal timing generator allows analog video output and AD-TRIG output to be obtained by simply inputting an external master clock and master start pulses.

Features

Spectral response range: 0.95 to 1.7 µm128 x 128 pixels (pixel pitch: 20 µm)High sensitivityCompact package (TO-8, two-stage TE-cooled type)Internal timing generator

Applications

Non-destructive inspectionNear-infrared image monitors

Parameter Symbol Specifi cation Unit

Number of pixels - 128 x 128 pixels

Pixel pitch - 20 to 25 µm

Spectral response range λ 0.95 to 1.7 µm

Please contact us for the release schedule of these products.

Please contact us for the release schedule of these products.

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Opto-semiconductor

Image sensor

InGaAs area image sensor G11097 seriesImage sensors with 64 x 64 pixels or 128 x 128 pixels developed for two-dimensional infrared imaging

The G11097 series has a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and back-illuminated InGaAs photodiodes for two-dimensional infrared imaging. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an indium bump. A timing generator in the ROIC provides an analog video output and AD-TRIG output which are easily obtained by just supplying master clock and master start pulses from external digital inputs.

Circuit for image sensor

InGaAs multichannel detector head C11512 seriesCan be used in combination with G11097 series

The C11512 and C11512-01 InGaAs multichannel detector heads are designed for use with the G11097-0606S and G11097-0707S InGaAs area image sensors (sold separately) to perform various near-infrared imaging tasks.

Features

Spectral response range: 0.95 to 1.7 µm1.12 to 1.9 µm also available (custom product)G11097-0606S: 64 x 64 pixelsG11097-0707S: 128 x 128 pixelsExcellent linearity by offset compensationSimultaneous charge integration for all pixels(global shutter mode)Compact package (G11097-0606S: TO-8, one-stage TE-cooled type)

Applications

Thermal imagingLaser beam profi lerNon-destructive inspection

Parameter Symbol G11097-0606S G11097-0707S Unit

Pixel size - 50 x 50 µm

Number of pixels - 64 x 64 128 x 128 pixels

Spectral response range λ 0.95 to 1.7 µm

Peak sensitivity wavelength λp 1.55 µm

Data rate fv 5 MHz

Frame rate*1 - 1025 279 fps

*1: Integration time=1 µs

Left: G11097-0606S, Right: G11097-0707S

Features

CameraLink interfaceCompact size

Applications

Thermal imagingLaser beam profi lerNon-destructive inspection

Parameter C11512 C11512-01 Unit

Applicable InGaAs area image sensor G11097-0606S G11097-0707S -

Interface CameraLink (Base Confi guration) -

Power supply 4.75 to 5.25 V

Dimensions 90 (H) x 100 (W) mm

C11512

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Opto-semiconductor

X-ray detector

Flat panel sensor C11700DK-40, C11701DK-40Flat panel sensor with large photosensitive area yet high-speed response for X-ray 3D imaging

The C11700DK-40 and C11701DK-40 are fl at panel sensors for X-ray imaging, specially developed for 3D-CT applications. They deliver high-speed response despite the large photosensitive area, and have multiple scan modes.

Parameter C11700DK-40 C11701DK-40 Unit

Pixel size 240 x 240 µm

Photosensitive area (H x V) 161 x 159 265 x 215 mm

Frame rate*2 40 30 frames/s

Sensitivity*2 12000 LSB/mR

Scintillator Directly deposited CsI -

*2: Fast mode

Applications

3D imaging

Features

Large photosensitive area yet high-speed responseHigh sensitivityHigh resolution

Left: C11700DK-40, Right: C11701DK-40

Radiation detector

Radiation detector module C12137Compact, high-sensitivity radiation detector module with high accuracy

Connection example to PC (PC is not included with the product)

The C12137 is a gamma-ray detector module containing a scintillator and an MPPC (multi-pixel photon counter). The scintillator converts incident gamma rays into visible light, and the MPPC detects the converted light even at low light levels, allowing highly accurate measurement of low energy gamma rays. The signal processing circuit and A/D converter necessary for measurement are also installed in the compact case equipped with a USB interface that connects to a PC (Windows® 7/XP*3) for radiation measurement.

Parameter Condition Specifi cation

Scintillator CsI(Tl), 13 x 13 x 20 mmCounting effi ciency 137Cs*4, 0.01 µSv/h 20 cpm min.Energy range 30 keV to 2 MeVEnergy resolution 137Cs*4, 662 keV 8%Measurement range 0.01 µSv/h to 20 µSv/h

Measurement error Excluding attenuation by shield object and counting fl uctuations ±20 %

Sampling time 1 to 60 seconds

InterfaceUSB 2.0 (Full Speed) compatible with Windows® 7 (32-bit, 64-bit)/XP (32-bit)*3

Power supply USB bus power

*3: Windows is either registered trademark or trademark of Microsoft Corporation in the United States and other countries.

*4: Cesium 137

Features

Gamma-ray energy discriminationModule design for easy assembly into equipmentCompact and lightweight

Applications

Environmental monitoring and mappingScreening such as receiving/shipping inspection at manufacturing siteAssembly into portable, high-sensitivity detector

Please contact us for the release schedule of these products.

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Photodetector

Photomultiplier tube module H11706

Electron tube product

Module with internal shutter for protection against excitation light

The H11706 is a current output type module containing a metal package photomultiplier tube. The shutter operates by inputting an external signal. Shutter speed is 1 µs to 10 ms.

Photodetector

Photomultiplier tube module H12056Module with internal shutter for protection against excessive light

The H12056 is a current output type module containing a metal package photomultiplier tube. The shutter operates by inputting an external signal. Shutter speed is 10 ms to DC.

Applications

Low-light-level measurement immediately after input of excessive light pulse

Applications

Low-light-level measurement

Type no. Spectral response Feature

H12056-110 230 to 700 nm Super-bialkali photocathode, Visible range, General type

H12056-01 230 to 870 nm Multialkali photocathode, Visible to NIR range, General type

H12056-20 230 to 920 nm Extended red multialkali photocathode

H12056P-110 230 to 700 nm Super-bialkali photocathode, Photon counting type

H12056P-01 230 to 870 nm Multialkali photocathode, Photon counting type

Features

Internal shutter for protection against excessive light pulsesSwitching ratio: 102 to 103

Features

Internal shutter for protection against excessive lightSwitching ratio: 102 to 103

Please contact us for the release schedule of these products.

Type no. Spectral response Feature

H11706-110 230 to 700 nm Super-bialkali photocathode,visible range, general type

H11706-01 230 to 870 nm Multialkali photocathode,visible to NIR range, general type

H11706-20 230 to 920 nm Extended red multialkali photocathode

H11706P-110 230 to 700 nm Super-bialkali photocathode,photon counting type

H11706P-01 230 to 870 nm Multialkali photocathode,photon counting type

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Photodetector

Photon counting head H11890 series

Electron tube product

Makes measurements by USB connection only

The H11890 is a compact module integrating a metal package photomultiplier tube, high-voltage power supply, voltage divider circuit, photon counting circuit, counter circuit, and USB interface.

Photodetector

Cooling module H11836Reduced dark current and dark count by photocathode cooling

The H11836 is a photon counting head with a thermoelectric cooler that cools the photocathode of the 16-channel linear multianode photomultiplier tube. A thermistor is also included in the cooled section to monitor the photocathode temperature as needed.

Features

Photon counting head

Applications

Low-light-level detection such as spectroscopic analysis and laboratory testing

Parameter H11890-110 H11890-210 H11890-01 Unit

Input voltage USB Bus Power -

Max. input current 50 mA

Spectral response range 230 to 700 230 to 700 230 to 870 nm

Peak sensitivity wavelength 400 nm

Effective area φ8 mm

Count sensitivity at 400 nm (typ.) 4.9 x 105 6.1 x 105 3.6 x 105 s-1·pW-1

Count linearity *1 5.0 x 106 s-1

Dark count *2 (typ.) 50 50 600 s-1

*1: Random pulse, at 10 % count loss.*2: After 30 minutes storage in darkness at plateau voltage.

Features

Internal voltage-divider circuit, amplifier and high-voltage power supply

Applications

Biomedical fl uorescence detectionLaser scanning detectionLow-light emission measurement

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Photodetector

Multianode photomultiplier tube assembly H7546B-300, H8711-300Multianode (8 x 8): H7546B-300Multianode (4 x 4): H8711-300High quantum effi ciency (in green-light region)

Electron tube product

These assemblies use a 1- inch square metal package photomultiplier tube with metal channel dynodes. They offer higher sensitivity in the green region than ordinary bialkali photocathodes, yet limit the dark count to a low level equal to that of ordinary bialkali photocathodes.

Features

Photocathode with enhanced green sensitivity: Quantum effi ciency is 11 % or more (at 550 nm)Spectral response range: 300 nm to 700 nmHigh-speed response

g H7546B-300

Parameter Min. Typ. Max. Unit

Cathode luminous (2856K) 120 160 - µA/lm

Anode luminous (2856K) - 80 - A/lm

Blue sensitivity index (CS 5-58) 12 14 - -

Gain - 5.0 x 105 - -

Anode dark current (/ch) *1 - 0.2 2 nA

Uniformity between each anode - 1:2.5 1:4 -

Pulse linearity (/ch) *2 - 0.3 - mA

Applications

Academic researchMedical equipmentSpectroscopic analysisSEMConfocal microscopeSemiconductor inspection systemNeutron structure analysis

g H8711-300

Parameter Min. Typ. Max. Unit

Cathode luminous (2856K) 120 160 - µA/lm

Anode luminous (2856K) - 400 - A/lm

Blue sensitivity index (CS 5-58) 12 14 - -

Gain - 2.5 x 106 - -

Anode dark current (/ch) *1 - 0.6 2 nA

Uniformity between each anode - 1:2 1:3 -

Pulse linearity (/ch) *2 - 1 - mA

*1: After 30 minutes storage in darkness.*2: ±5 % deviation.

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13

Electron tube product

Photodetector

Cooled side-on photomultiplier tube R11715/-01Cooled type with low-noise bialkali photocathode

The R11715 is a cooled type 28 mm (1-1/8 inch) side-on photomultiplier tube with an integrated top plate, shield plate and cathode. Suffi x No. "-01" indicates it has a Peltier cooler.

Features

Reduced dark current by photocathode cooling

Parameter Specifi cation Unit

Spectral response range 185 to 710 nm

Peak sensitivity wavelength 410 nm

Effective area 8 x 24 mm

Applications

Analytical equipmentMedical equipment

Cooling characteristic

0 20 40 60 80 100 120 140 160 180 200 220 240 260 280 3000

5

10

15

20

25

30

35

40

45

50

0

20

40

60

80

100

120

140

160

180

200

Time (s)

Ph

oto

cath

od

e te

mp

erat

ure

(°C

)

Dar

k co

un

t (s

-1)

Photocathode temperature (°C)Dark count (s-1)

Photodetector

High-speed photomultiplier tube R11919New electrode dynode design achieving 270 ps TTS

The R11919 is a 38 mm (1.5 inch) head-on photomultiplier tube achieving high-speed response (Tr: 1.7 ns, T.T.S.: 270 ps).

Features

Fast response time characteristics

Applications

High energy physicsTOF-PETScintillation counting

Parameter Min. Typ. Max. Unit

Cathode luminous (2856 K) 70 95 - µA/lm

Anode luminous (2856 K) - 100 - A/lm

Blue sensitivity index (CS 5-58) 9 11 - -

Gain - 1.0 x 106 - -

Anode dark current *1 - 50 300 nA

Time response (Rise time) - 1.7 - ns

Time response (Transit time) - 19 - ns

Time response (Transit time spread) - 270 - ps

*1: After 30 minutes storage in darkness.

Parameter Specifi cation Unit

Spectral response range 300 to 650 nm

Peak sensitivity wavelength 420 nm

Effective area φ34 mm

Please contact us for the release schedule of these products.

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14

Electron tube product

Accessory for photomultiplier tube

D-Type Socket Assembly E10679/-50For metal package PMT R9880U

These socket assemblies have an internal voltage-divider circuit for the R9880U metal package photomultiplier tube. The E10679 is a cable output type, and the E10679-50 is a pin output type.

Applications

Voltage divider for metal package PMT R9880U

Features

CompactCable output and on-board (pin output) types available

Accessory for photomultiplier tube

Compact high-voltage power supply C10940 seriesOn-board mounting type

The C10940 is a compact, cubic type high-voltage power supply with output of +1200 V/-1200 V and 0.6 mA. -R2 type is RS-485 digital control.

Features

Compact and lightweightHigh reliabilityHigh conversion effi ciency

Applications

Portable photodetectorRemote control photodetector

Parameter C10940-03C10940-03-R2

C10940-53C10940-53-R2 Unit

Input voltage range +5±0.5 V

Input current (typ.) 60 (no load), 230 (full load) mA

Variable output range -10 to -1200 +10 to +1200 V

Specifi cation guaranteed output voltage range -200 to -1200 +200 to +1200 V

Output current (max.) 0.6 mA

Line regulation (typ.) *1 ±0.02 %

Load regulation (typ.) *2 ±0.01 %

Ripple / Noise (p-p) (typ.) *3 50 mV

Temperature coeffi cient (typ.) *3 ±0.01 %/°C

Weight 8.5 g

*1: At maximum output voltage, at maximum output current, against ±0.5 V input change.*2: Against 0 % to 100 % load change.*3: At maximum output voltage, at maximum output current.

Parameter E10679 E10679-50 Unit

Grounded electrode / Supply voltage polarity Anode / Negative -

Max. supply voltage between power supply terminals 1100 V

Max. voltage divider current *1 0.32 mA

Power consumption *1 350 mW

Total voltage divider resistance 3.46 MΩ

Max. linear output in DC mode *1 16 µA

Signal output DC / Pulse -

Weight 15 4.8 g

*1: at max. power supply voltage.

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15

Electron tube product

Point of care test

Immunochromato reader C10066-10Ideal for R&D of immunochromatographic reagents and quality control

The C10066-10 makes rapid, high-sensitivity quantitative measurements of color intensities for red/blue-based immunochromatographic reagents. Measurement data is saved as CSV fi les and so can be easily analyzed on commercially available spreadsheet software while drawing calibration curves and time-course graphs.

Parameter Specifi cation Unit

Input voltage (AC) 100 to 240 V

Power consumption (max.) 3 VA

Interface USB 2.0 (cable supplied) or RS-232C (dedicated cable optional) -

Light source Green LED / Red LED -

Light detection Silicon photodiode -

Measurement object Red-based color line / Blue-based color line -

Dimensions (W x H x D) 215 x 92 x 235(excluding projecting parts) mm

Weight 1.6 kg

Features

High-sensitivity measurement with high repeatability Measures red-based and blue-based color lines with a single unitCompatible with various reagent housing confi gurations

Applications

Development of immunochromatographic reagentsQuality control

Point of care test

Immunochromato reader C11787Computer-controlled immunochromato reader

The C11787 makes rap id , h igh-sens i t iv i ty quant i ta t ive measurements of color intensities for immunochromatographic reagents. Measurement results are saved in the PC, so the data can be easily analyzed and managed. We will design custom holders to match the immunochromatographic reagent you are using.

Features

Easy data analysis and management

Parameter Specifi cation Unit

Input voltage (AC) 100 to 240 V

Power consumption (max.) 2 VA

Interface USB 2.0 (cable supplied) or RS-232C (dedicated cable optional) -

Light source Green LED -

Light detection Silicon photodiode -

Measurement object Colloidal gold color line -

Dimensions (W x H x D) 220 x 100 x 270(excluding projecting parts) mm

Weight 1.2 kg

Applications

Biochemistry R&DFood allergyAgricultural viruses, residual pesticidesEnvironmental endocrine disrupters

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16

Electron tube product

Light source

Flash light source LIGHTNINGFLASH LF2 L10729-04, L10730-04Allows installation of 15 W xenon fl ash lamp as well as 40 W lamp

The LF2 offers high performance nearly equal to our previous model LF1, yet offers lower cost by eliminating the CPU. The LF2 allows installation of two different lamps (40 W or 15 W) and the basic operations are performed by external control.

Applications

Flash light source for various inspection cameras

Features

Long service life: 1 x 108 fl ashesEasily replaceable cassette type lampCan be synchronized with CCD camera by external triggerAllows installation of two different lamps: 40 W or 15 W

Light source

20 W Xenon fl ash lamp L1193X, L1194X, L1195X, L1196X seriesHigh stability and long service life

These lamps employ a new electrode with reduced wear that ensures highly stable operation even at high power input, achieving high stability and long service life.

Features

High stability: 1 %CV (typ.)Long service life: 1 x 108 fl ashesHigh output: 1.1 to 1.2 times higher than conventional type

Parameter Specifi cation Unit

Window material Borosilicate Glass, UV Glass, Sapphire Glass, Fused Silica Glass -

Recommended supply voltage 700 to 1000 V

Max. input energy 0.5 J

Life 1 x 108 fl ash

Applications

MTP readerBlood analysisAtmospheric analysis

Water quality, sewage pollution analysis FluorospectrophotometerSemiconductor inspection

Parameter L1193X L1194X L1195X L1196X Unit

Arc size 1.5 1.5 3.0 3.0 mm

Built-in refl ector NA Yes NA Yes -

Parameter -04-01-1 -04-04-1 -04-01-2 Unit

Maximum lamp input power 40 40 15 W

Maximum lamp input energy (per fl ash) *1 0.5 1.28 0.5 J

Maximum repetition rate *2 100 30 to 70 70 Hz

Flash duration (FWHM) 2 2 to 4 2 µs

Light output stability (typ.) *3 ±5 %

Spectral distribution 385 to 1600 nm

Delay time 1 µs max.

Lamp supply voltage 300 to 1000 300 to 800 700 to 1000 V

*1: Input energy E=CV2·1/2 E: energy (J), C: main discharge capacitor (F), V: lamp supply voltage (Vdc)

*2: Set the emission frequency so that the lamp input power does not exceed 40 W.Lamp input power = input energy x emission frequency

*3: Measured with lamp supply voltage of 800 V, main discharge capacitor of 4 µF, and emission frequency of 30 Hz (at 40 W input).

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17

Electron tube product

Light source

UV-LED module LC-L1v3 L11921, L11922, E11923, C11924 seriesIntegrated driver, hub and controller

Compared to our previous model LC-L2, the LC-L1v3 UV-LED modules are compact and have advanced functions, yet offer lower cost. The driver, hub and controller, which are separated in the previous model, are integrated into a compact case. The driver is equipped with a simplifi ed liquid crystal display, etc. for easier operation.

Features

Compact, high stability, high output and long service lifeMemory step functionFeedback functionFanless design allows use in clean roomSimple operation

Applications

UV adhesive curingUV bonding

Parameter365 nm

standard type

385 nmstandard

type

365 nmhigh power

type

385 nmhigh power

typeUnit

UV irradiation intensity 7500 10000 10500 15000 mW/cm2

Peak wavelength 365±5 385±5 365±5 385±5 nm

LED life 20000 h

Input voltage (DC) 9±0.5 V

Power consumption (max.) 25 W

Cooling method Air cooling without blower -

Operating temperature range +5 to +35 °C

Storage temperature range -10 to +50 °C

Operating humidity range 20 to 80 (No condensation) %

Storage humidity range Below 80 (No condensation) %

Control method Manual control / External control -

Dimension (W x D x H) 160 x 104 x 30 mm

Applicable standard -

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18

Electron tube product

Electrostatic remover

Photoionizer compact cube L11757Removes static electricity using photoionization

The L11757 low-energy photoionizer is a compact, electrostatic charge remover made even smaller than our previous photoionizers. Its compact head unit is designed to give extremely good positioning freedom during installation, yet it still provides maintenance-free operation, zero dust generation, no electromagnetic noise emissions, no overshoot (generates no static charges of opposite polarity) and requires no air fl ow.

Applications

Electrostatic charge removal

Features

Compact head: Can be installed in narrow spacesWide soft X-ray emission angle: 153 deg.Easy to shield

Electrostatic charge removal effect

Measurement conditionsCharging voltage: 1 kV to 100 V Temperature: 25 °CHumidity: 50 %Air flow: NoneMeasuring device: Charging plate (150 mm × 150 mm, 20 pF)

0.5 s1.0 s1.5 s2.0 s2.0 s

10cm

10cm

20cm

20cm

30cm

30cm

40cm

40cm

153°

Light source

H2D2 light source unit L11798/-01, L11799/-01Uses high brightness, high performance deuterium lamp

This unit uses a high brightness, high performance deuterium lamp (H2D2 lamp) that ensures 6 times higher intensity than our previous product (L2D2 lamp). Despite its high brightness, this unit has high stability and long service life, and allows air-cooled operation by use of a specially designed housing. Ease of use is signifi cantly improved compared to the conventional water-cooled type. This unit can be used in a wide range of applications and delivers even higher sensitivity and higher throughput.

Features

High brightness: 6 times (compared to our previous product)High stability: Fluctuation 0.05%p-p (max.), drift ±0.3%/h (max.)Long service life: 1000 hours guaranteedAir cooling (No cooling water required)

External control possibleReplaceable lamp

Brightness distribution

Distance from aperture center (mm)

-2.5 -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 2.50

50

100

150

200

250

300

350

400

450

500

550

600

650

Rel

ativ

e in

ten

sity

(%

)

Highbrightness

x 6

Highbrightness

x 6

H2D2 lamp

Conventional modelX2D2 lampL2D2 lamp ( 0.5 mm)

Applications

SpectrophotometerEnvironmental measurementOptical component inspection

Semiconductor inspectionFilm thickness measurementElectro static remover

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19

Camera

Digital camera ORCA-Flash4.0

System product

High sensitivity (QE: over 70 %) and high-speed (100 frames/s) scientifi c imaging CMOS camera

Hamamatsu releases a new line of ORCA-Flash: ORCA-Flash4.0. It is a high-resolution, 4-megapixel camera which is equipped with the new scientifi c CMOS image sensor. The ORCA-Flash4.0 captures images at low noise, high resolution and high speed, making it suitable for most applications in various fields, from scientifi c imaging to semiconductor inspection, X-ray scintillator readout, and so on.

Applications

Super resolution microscopyHigh-speed Ca2+ imagingSemiconductor inspection

Imaging example

Features

High resolution: 4 megapixelsExceptional sensitivity (QE=over 70 % at 600 nm)High-speed readout: 100 frames/sLow noise: 1.3 electrons (at 100 frames/s)High dynamic range: 23 000:1Wide fi eld of view

High speed Ca2+ imaging of cardiomyocyte derived from human iPS cells stained by Fluo8-AM

Low noise and fast readout time simultaneously

Readout method Number of pixels Readout speed at center position (frames/s)

Full resolution 2048 × 2048 100

Sub-array readout(Typical examples)

2048 × 1024 200

2048 × 512 400

2048 × 256 800

2048 × 64 3200

2048 × 8 25 600

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20

Camera

X-ray TDI camera C12200-321

The C12200, which uses the TDI (Time Delay Integration) method, is a high-resolution camera used for high-sensitivity, high-speed X-ray imaging. It produces bright and crisp images with high horizontal resolution (4608 pixels).

Features

High-speed readout: approx. 36.8 m/min.Max. detection width: 221 mmHigh resolution and high sensitivity(Horizontal spatial resolution: 4608 with 128 TDI stages)

High-speed X-ray imaging

Applications

Printed circuit board (PCB) inspectionSurface-mounted component inspectionLithium-ion battery inspection

Imaging example

3By imaging the internal structure of a lithium battery, foreign materials can be detected.

Camera

Cooled InGaAs camera C10633-34High-sensitivity camera for NIR imaging

The C10633-34 is a cooled InGaAs camera with high sensitivity in the infrared region, especially in the range from 900 nm to 1520 nm. Peltier cooling lowers the sensor dark current to provide both enhanced image quality and long-term exposure.Furthermore, non-destructive readout improves signal-to-noise ratio, and provides very high sensitivity for low-light imaging.

Features

High sensitivity in NIR region (900 nm to 1520 nm)Low dark current with -70 degrees C peltier coolingMaintenance-free due to hermetic vacuum-sealed headNon-destructive readout feature (possible to monitor signal over a long period of time)

Applications

Solar cell and panel inspection by EL and/or PLTelecommunication device researchSemiconductor inspection

Spectral response

0800 1000 1200 1400 1600

20

40

60

80

100

Wavelength (nm)

Qu

antu

m e

ffic

ien

cy (

%)

System product

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21

System product

Camera

Universal streak camera C10910Capturing ultrafast optical phenomena occurring in extremely short time periods

The C10910 series are universal streak cameras, the products of high-speed optical phenomena techniques and imaging techniques. They measure varied optical phenomena by combining various plug-in sweep units and peripherals. The C10910's huge advantages over existing products are their excellent temporal resolution and computer-controlled operation.

Features

A diverse range of setups from single optical phenomena to high-speed repeated phenomena in the GHz regionHigh sensitivity in UV to NIR regionSuperb time resolution: 1 picosecond (in single-shot or synchroscan)USB2.0 control

Applications

Measurement of electron bunch for synchrotron and LINAC applicationsResearch involving free electron lasers and various other types of pulsed lasersPlasma light emission, radiation, laser ablation, combustion and explosions

Measurement example

Measurement system

Compact fl uorescence lifetime spectrometer Quantaurus-TauMeasuring fluorescence lifetime with simple operation

The Quantaurus-Tau is a compact fluorescence lifetime measuring system integrating a light source, spectrometer, and optics into a single box. It quickly measures the fluorescence lifetime and PL spectra of solutions, powders, solids and thin fi lms just by loading the sample and giving a few instructions to the measurement software. Analysis results for basic measurements can be obtained in 1 minute.

Features

High-sensitivity measurement by photon counting methodTime resolution better than 100 ps (by deconvolution)Cooling function for solution samples (-196 degrees C) (option)Phosphorescence measurement (option)

Applications

Measuring intermolecular transfer of metallo-organic complexFluorescence/Phosphorescence lifetime measurement of materialsEvaluating PV or compound semiconductor for LED

Measurement example

5Thermal activation delayed fluorescence measurement (O-LED)Data courtesy of Prof. Chihaya Adachi, Dr. Takane Endo, Center for Future Chemistry, Kyushu University

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22

Measurement system

Optical NanoGauge C11627Measuring thin films 20 nm to 50 µm thick in real time with high accuracy

The C11627 is a compact fi lm thickness measuring system integrating a light source, spectrometer, and data analyzer into a single box and designed to install into a customer's equipment. It requires no time-consuming reference measurements and so provides long-term stable measurements that are quick and highly accurate.

Features

Designed to mount inside customer's equipmentEasily handles height fl uctuationsMeasures thin fi lms 20 nm to 50 µm thick in real time with high accuracy

Applications

Film on a wafer thickness measurementFilm thickness measurement of FPD panel Application fi lm, coated fi lm, plastic fi lm

Measurable fi lm thickness range 20 nm to 50 µm

Measurement reproducibility 0.02 nm

Measurement accuracy ±0.4%

Light source LED

Spot size Approx. φ1 mm

Working distance 10 mm

Number of measurable layers Max. 10 layers

Measurement time 19 ms/point

Specifi cations

System product

Measurement system

Absolute PL quantum yield spectrometer Quantaurus-QYMeasuring fluorescence PL quantum yield with simple operation

The Quantaurus-QY is a compact absolute PL quantum yield measuring system integrating a light source, spectrometer, and optics into a single box. It quickly measures the absolute PL quantum yield, excitation wavelength dependence and PL spectra of solutions, powders, solids and thin fi lms just by loading the sample and giving a few instructions to the measurement software. Analysis results for basic measurements can be obtained in 1 minute.

Features

Measuring absolute photoluminescence quantum yield of light-emitting materials (PL measurement)Utilizes an integrating sphere to measure all luminous fl uxCooling function for solution samples (-196 degrees C) (option)Automatically controls the excitation wavelengths

Applications

Research O-EL materials, white LED phosphors for FPDEvaluating dyes for dye-sensitized PV cellQuantum yield measurement of fl uorescent bioprobe

Measurement example

Wavelength (nm)

Inte

nsi

ty (

a. u

.)

0

1

0.5

350 400 450 500 550 600

Fluorescence quantum yield

C9920-02: 0.28 ± 0.02Literature: 0.27 ± 0.03

3Fluorescence spectrum and quantum yield of anthracene solution

Collaborative research of Hamamatsu Photonics K.K.; A. Kobayashi, S. Kaneko, K. Takehira, T. Yoshihara, and S. Tobita, Faculty of Engineering, Gunma University; H.Ishida, Y.Shiina, and S.Oishi, School of Science, Kitasato University

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23

System product

Measurement system

Optical MicroGauge C11665Measuring thin fi lms 0.5 µm to 700 µm thick in real time with high accuracy

The C11665 is a compact thickness measuring system integrating a light source, spectrometer, and data analyzer into a single box and designed to install into a customer's equipment. It requires no time-consuming reference measurements and so provides long-term stable measurements that are quick and highly accurate.

Features

Designed to mount inside customer's equipmentEasily handles height fl uctuationsMeasures thin fi lms 0.5 µm to 700 µm thick in real time with high accuracy

Applications

Film on a wafer thickness measurementThin-fi lm thickness measurement Glass thickness measurement

Measurable fi lm thickness range 0.5 µm to 700 µm (Refractive index of glass: 1.5)0.5 µm to 300 µm (Refractive index of silicon: 3.67)

Measurement reproducibility 5 nm (Standard deviation when a 150 µm thick glass was measured.)0.1 nm (Standard deviation when a 6 µm thick silicon fi lm was measured.)

Light source LED

Spot size Approx. φ1 mm

Working distance 10 mm

Number of measurable layers Max. 10 layers

Measurement time 19 ms/point

Specifi cations

Measurement system

PV imaging system EPLiEvaluating PV cells and modules by EL/PL method

The EPLi imaging system inspects PV cells and modules by measuring electroluminescence (EL) and intensity distribution or fluorescence brightness of the photoluminescence (PL). It is suitable to measure Si, a-Si, CIGS, dye-sensitized cells and modules.

Measurement example

Applications

«EL method»Process failure Grid / Finger failureCracks

«PL method»Material/Crystalline failure ObstaclesThin-fi lm defect

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24

Measurement system

Fluorescence imaging module L11600-21, -22Fluorescence Imaging Module for NanoZoomer2.0 (Option)

The Fluorescence Imaging Module combined with the NanoZoomer 2.0 series digitizes entire fluorescence-stained slides with high speed and high resolution. The digitized slides are saved as digital data, and this enables long term microscopic observation without photobleaching.

Features

Scan multiple fl uorescence probes*Superimpose images of entire tissuesHigh power and long life light source without alignmentFeatures dark fi eld illumination for sample identifi cation

Imaging example

5Rapid and high-fidelity imaging of fluorescence-labeled Q-dots (human pancreas)(Data courtesy of the Department of Pathology, Keio University School of Medicine)

System product

Measurement system

Functional drug screening system FDSS7000EXCell-based assay system(corresponding to HTS)

The FDSS7000EX is a cell-based assay system corresponding to HTS (High Throughput Screening). It has 1536, 384 and 96 well-plates for batch measurements and quick and highly precise assays. Its multiple functions support the creation of new drugs.

Measurement example

5Measurement example (1536 wells)

Features

Suitable for 1536, 384 and 96 wells microplatesDetecting fl uorescence and light emissionMeasuring adherent cells and fl oating cellsSelectable functions depending on usage (Fura-2, FRET, etc.)

Applications

Intracellular ion assayMembrane potential assayVarious ion channel assay

* 6 switchable filters for fluorescence and excitation wavelengths allow acquiring multiple images sequentially.

L11600-21, -22

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25

Laser

Quantum cascade laser L12004-2190H-C, L12007-1294H-C, L12017-1278T-CA new light source for mid-IR applications such as molecular gas analysis.

Quantum Cascade Lasers are semiconductor lasers that offer peak emission in the mid-IR range (4 µm to 10 µm). They have gained considerable attention as a new light source for mid-IR applications such as molecular gas analysis.

Features

Mid-IR laser (4 µm to 10 µm)

Laser product

Compact, lightweight

n L12004-2190H-C n L12007-1294H-C

0.72184

2186

2188

2190

2192

2194

4.5788

4.5746

4.5704

4.5662

4.5620

4.5579

0.8 0.9

Forward current If (A)

Em

issi

on

wav

enu

mb

er K

(cm

-1)

Wav

elen

gth

m)

1.0 1.1

Top(qcl)=20 °C

Top(qcl)=30 °C

Top(qcl)=40 °C

0.31290

1292

1294

1296

1298

7.7519

7.7399

7.7280

7.7160

7.7042

0.4 0.5

Forward current If (A)

Em

issi

on

wav

enu

mb

er K

(cm

-1)

Wav

elen

gth

m)

0.6 0.7 0.8

Top(qcl)=10 °C

Top(qcl)=20 °C

Top(qcl)=30 °C

-201274

1276

1278

1280

1282

1284

1286

7.8493

7.8370

7.8247

7.8125

7.8003

7.7882

7.7760

0 20

Operating temperature (QCL) Top(qcl) (°C)

Em

issi

on

wav

enu

mb

er K

(cm

-1)

40 60

n L12017-1278T-C n L12004-2190H-C

n L12007-1294H-C

Parameter SymbolTemperature coefficient of wavenumberCurrent coefficient of wavenumber

δKT

δKC

ConditionIf=fixed

Top(qcl)=fixed

Typ.-0.18 cm-1/°C-0.015 cm-1/mA

Parameter SymbolTemperature coefficient of wavenumberCurrent coefficient of wavenumber

δKT

δKC

ConditionIf=fixed

Top(qcl)=fixed

Typ.-0.1 cm-1/°C-0.01 cm-1/mA

Parameter SymbolTemperature coefficient of wavenumber δKT

ConditionIfp=fixed

Typ.-0.1 cm-1/°C

n L12017-1278T-CWav

elen

gth

m)

Applications

Trace gas analysis (Environmental measurement, Combustion gas measurement, Plasma measurement, In vivo gas analysis)IR molecular spectroscopy

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Cat. No. XPRD1011E01Jan. 2012 DNPrinted in Japan (5,000)

HAMAMATSU PHOTONICS K.K.

www.hamamatsu.com

Opto-semiconductors

Si photodiodesAPDMPPCPhoto ICImage sensorsX-ray flat panel sensorsPSDInfrared detectorsLEDOptical communication devicesAutomotive devicesMini-spectrometers High energy particle/X-ray detectorsOpto-semiconductor modules

Electron Tubes

Photomultiplier tubesPhotomultiplier tube modulesMicrochannel platesImage intensifiersXenon lamps / Mercury xenon lampsDeuterium lampsLight source applied productsLaser applied productsMicrofocus X-ray sourcesX-ray imaging devices

Imaging and Processing Systems

Cameras / Image processing measuring systemsX-ray productsLife science systemsMedical systemsSemiconductor failure analysis systemsFPD / LED characteristic evaluation systemsSpectroscopic and optical measurement systems

Laser Products

Semiconductor lasersApplied products of semiconductor lasersSolid state lasers

Information in this catalogue isbelieved to be reliable. However,no responsibility is assumed forpossible inaccuracies or omissions.Specifications are subject tochange without notice. No patentrights are granted to any of thecircuits described herein.

© 2012 Hamamatsu Photonics K.K.

Quality, technology, and serviceare part of every product.

Sales OfficesMain Products

JAPAN:HAMAMATSU PHOTONICS K.K.

325-6, Sunayama-cho, Naka-kuHamamatsu City, 430-8587, JapanTelephone: (81)53-452-2141, Fax: (81)53-456-7889

China:HAMAMATSU PHOTONICS (CHINA) Co., Ltd

1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, ChinaTelephone: (86)10-6586-6006, Fax: (86)10-6586-2866Email: [email protected]

U.S.A.:HAMAMATSU CORPORATION

Main Office360 Foothill Road, P.O. BOX 6910,Bridgewater, N.J. 08807-0910, U.S.A.Telephone: (1)908-231-0960, Fax: (1)908-231-1218E-mail: [email protected]

Western U.S.A. Office:Suite 200, 2875 Moorpark Avenue San Jose, CA 95128, U.S.A.Telephone: (1)408-261-2022, Fax: (1)408-261-2522E-mail: [email protected]

United Kingdom, South Africa:HAMAMATSU PHOTONICS UK LIMITED

Main Office2 Howard Court, 10 Tewin Road, Welwyn Garden City,Hertfordshire AL7 1BW, United KingdomTelephone: (44)1707-294888, Fax: (44)1707-325777E-mail: [email protected]

South Africa Office:PO Box 1112Buccleuch 2066Johannesburg, South AfricaTelephone/Fax: (27)11-802-5505

France, Portugal, Belgium, Switzerland, Spain:HAMAMATSU PHOTONICS FRANCE S.A.R.L.

19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, FranceTelephone: (33)1 69 53 71 00 Fax: (33)1 69 53 71 10E-mail: [email protected]

Swiss Office:Dornacherplatz 74500 Solothurn, SwitzerlandTelephone: (41)32/625 60 60, Fax: (41)32/625 60 61E-mail: [email protected]

Belgian Office:Scientific Park,7, Rue du BosquetB-1348 Louvain-La-Neuve, BelgiumTelephone: (32)10 45 63 34Fax: (32)10 45 63 67E-mail: [email protected]

Spanish Office:C. Argenters, 4 edif 2Parque Tecnologico del Valles E-08290 CERDANYOLA, (Barcelona) SpainTelephone: (34)93 582 44 30Fax: (34)93 582 44 31E-mail: [email protected]

Germany, Denmark, Netherlands, Poland:HAMAMATSU PHOTONICS DEUTSCHLAND GmbH

Arzbergerstr. 10,D-82211 Herrsching am Ammersee, GermanyTelephone: (49)8152-375-0, Fax: (49)8152-265-8E-mail: [email protected]

Danish Office:Lautruphoj 1-3DK-2750 Ballerup, DenmarkTelephone: (45)70 20 93 69, Fax: (45)44 20 99 10E-mail: [email protected]

Netherlands Office:Televisieweg 2NL-1322 AC Almere, The NetherlandsTelephone: (31)36-5405384, Fax: (31)36-5244948E-mail: [email protected]

Poland Office:02-525 Warsaw,8 St. A. Boboli Str., PolandTelephone: (48)22-646-0016, Fax: (48)22-646-0018E-mail: [email protected]

North Europe and CIS:HAMAMATSU PHOTONICS NORDEN AB

Smidesvägen 12SE-171 41 Solna, SwedenTelephone: (46)8-509-031-00, Fax: (46)8-509-031-01E-mail: [email protected]

Russian Office:Vyatskaya St. 27, bld. 15Kosmodamianskaya nab. 52/1, 14th floorRU-127015 Moscow, RussiaTelephone: (7) 495 258 85 18, Fax: (7) 495 258 85 19E-mail: [email protected]

Italy:HAMAMATSU PHOTONICS ITALIA S.R.L.

Strada della Moia, 1 int. 620020 Arese, (Milano), ItalyTelephone: (39)02-935 81 733Fax: (39)02-935 81 741E-mail: [email protected]

Rome Office:Viale Cesare Pavese, 43500144 Roma, ItalyTelephone: (39)06-50513454, Fax: (39)06-50513460E-mail: [email protected]