SFH 4235 - Osram · Group Total radiant flux 1) Total radiant flux 1) I F = 1000 mA; t p = 10 ms I...

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SFH 4235 1 Version 1.6 | 2019-07-16 Discontinued www.osram-os.com Applications SFH 4235 Platinum DRAGON ® High Power Infrared Emitter (850 nm) CCTV Surveillance Headlamps, LED & Laser & Night Vision Industrial Automation (Machine Controls, Light Barriers, Vision Controls) Safety and Security, CCTV Features: Package: clear silicone Corrosion Robustness Class: 3B Qualifications: The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) IR lightsource with high efficiency Double stack emitter Low thermal resistance (Max. 9 K/W) Centroid wavelength 850 nm Ordering Information Type Total radiant flux 1) Total radiant flux 1) Ordering Code typ. I F = 1000 mA; t p = 10 ms I F = 1000 mA; t p = 10 ms Φ e Φ e SFH 4235-Z 630 ... 1250 mW 950 mW Q65110A8900

Transcript of SFH 4235 - Osram · Group Total radiant flux 1) Total radiant flux 1) I F = 1000 mA; t p = 10 ms I...

Page 1: SFH 4235 - Osram · Group Total radiant flux 1) Total radiant flux 1) I F = 1000 mA; t p = 10 ms I F = 1000 mA; t p = 10 ms min. max. Φ e Φ e EA 630 mW 1000 mW EB 800 mW 1250 mW

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Applications

SFH 4235

Platinum DRAGON® High Power Infrared Emitter (850 nm)

— CCTV Surveillance

— Headlamps, LED & Laser & Night Vision

— Industrial Automation (Machine Controls, Light Barriers, Vision Controls) — Safety and Security, CCTV

Features: — Package: clear silicone

— Corrosion Robustness Class: 3B

— Qualifications: The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. — ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)

— IR lightsource with high efficiency — Double stack emitter — Low thermal resistance (Max. 9 K/W) — Centroid wavelength 850 nm

Ordering Information

Type Total radiant flux 1) Total radiant flux 1) Ordering Codetyp.

IF = 1000 mA; tp = 10 ms IF = 1000 mA; tp = 10 msΦe Φe

SFH 4235-Z 630 ... 1250 mW 950 mW Q65110A8900

Page 2: SFH 4235 - Osram · Group Total radiant flux 1) Total radiant flux 1) I F = 1000 mA; t p = 10 ms I F = 1000 mA; t p = 10 ms min. max. Φ e Φ e EA 630 mW 1000 mW EB 800 mW 1250 mW

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Maximum RatingsTA = 25 °C

Parameter Symbol Values

Operating temperature Top min. max.

-40 °C125 °C

Storage temperature Tstg min. max.

-40 °C125 °C

Junction temperature Tj max. 145 °C

Forward current IF max. 1000 mA

Surge current tp ≤ 200 µs; D = 0

IFSM max. 5 A

Reverse current 2) IR max. 200 mA

Power consumption Ptot max. 3400 mW

ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)

VESD max. 2 kV

Page 3: SFH 4235 - Osram · Group Total radiant flux 1) Total radiant flux 1) I F = 1000 mA; t p = 10 ms I F = 1000 mA; t p = 10 ms min. max. Φ e Φ e EA 630 mW 1000 mW EB 800 mW 1250 mW

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CharacteristicsIF = 1000 mA; tp = 10 ms; TA = 25 °C

Parameter Symbol Values

Peak wavelength λpeak typ. 860 nm

Centroid wavelength λcentroid typ. 850 nm

Spectral bandwidth at 50% Irel,max (FWHM) ∆λ typ. 30 nm

Half angle φ typ. 60 °

Dimensions of active chip area L x W typ. 1 x 1 mm x mm

Rise time (10% / 90%) IF = 5 A; RL = 50 Ω

tr typ. 7 ns

Fall time (10% / 90%) IF = 5 A; RL = 50 Ω

tf typ. 14 ns

Forward voltage IF = 1 A; tp = 100 µs

VF typ. max.

3 V3.4 V

Forward voltage IF = 5 A; tp = 100 µs

VF typ. max.

3.5 V4.5 V

Reverse voltage 2) IR = 20 mA

VR max. 1.2 V

Reverse voltage (ESD device) 2) VR ESD min. 45 V

Radiant intensity 3) IF = 1 A; tp = 100 µs

Ie typ. 320 mW/sr

Temperature coefficient of voltage TCV typ. -2 mV / K

Temperature coefficient of brightness TCI typ. -0.3 % / K

Temperature coefficient of wavelength TCλ typ. 0.3 nm / K

Thermal resistance junction solder point real 4) RthJS max. 9.0 K / W

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Brightness Groups TA = 25 °C

Group Total radiant flux 1) Total radiant flux 1)

IF = 1000 mA; tp = 10 ms IF = 1000 mA; tp = 10 msmin. max.Φe Φe

EA 630 mW 1000 mW

EB 800 mW 1250 mW Only one group in one packing unit (variation lower 1.6:1).

Relative Spectral Emission 5), 6)

Ie,rel = f (λ); IF = 1000 mA; tp = 10 ms

7000

nm

%

OHF04132

20

40

60

80

100

950750 800 850

Irel

λ

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Radiation Characteristics 5), 6)

Ie,rel = f (φ)

0

0.2

0.4

1.0

0.8

0.6

ϕ

1.0 0.8 0.6 0.4

0˚10˚20˚40˚ 30˚ OHL01660

50˚

60˚

70˚

80˚

90˚

100˚0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚

Forward current 5), 6)

IF = f (VF); single pulse; tp = 100 µsOHF04188

FI

V

A

2

FV

10-1

5

100

5

101

10-2

2.5 3 3.5 4

Relative Total Radiant Flux 5), 6)

Φe/Φe(1000mA) = f (IF); single pulse; tp = 100 µs

OHF04187

IF

A10-15 10 05 10 1

110

-210

-310

5

10

10

5

-1

5

0

e

Φ(1 A)Φ

e

10-2

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Max. Permissible Forward CurrentIF,max = f (TS); Rthjs = 9K / Wsingle pulse

00

FI

TS

OHF041901.1

0.1

0.2

0.4

0.3

0.5

0.7

0.6

0.8

0.9

A

13010060 80 ˚C20 40

Permissible Pulse Handling CapabilityIF = f (tp); duty cycle D = parameter; TS = 85°C

-5

FIA

tp

s

OHF04189

-410 -310 -210 -110 010 110 21010

Pt=D TT

tP

IF

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.5

0.5

0.20.33

0.1

0.020.05

D =

0.010.005

1

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Dimensional Drawing 7)

Further Information

Approximate Weight: 219.0 mg

Package marking: Cathode

Corrosion test: Class: 3B Test condition: 40°C / 90 % RH / 15 ppm H2S / 14 days (stricter than IEC 60068-2-43)

ESD advice: The device is protected by ESD device which is connected in parallel to the Chip.

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Recommended Solder Pad 7)

Solder resist

Freies KupferBare Copper

Lötpasten SchabloneSolder paste stencil

Lötstopplack

OHAY0681

0.3

(0.0

12)

KupferCopper

1.6 (0.063)

11.6 (0.457)

12.0 (0.472)

2.3

(0.0

91)

2.3

(0.0

91)

10 (0

.394

)

1.6 (0.063)

11.6 (0.457)

3 Lötstellen3 solder points

Thermal enhanced PCBThermisch optimiertes PCB

ø4.0 (0.157)Heatsink attachø4.0 (0.157)

ø2.5 (0.098)

Anode and heatsink are electrically connected.

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Reflow Soldering ProfileProduct complies to MSL Level 2 acc. to JEDEC J-STD-020E

00

s

OHA04525

50

100

150

200

250

300

50 100 150 200 250 300t

T

˚C

St

t

Pt

Tp240 ˚C

217 ˚C

245 ˚C

25 ˚C

L

Profile Feature Symbol Pb-Free (SnAgCu) Assembly UnitMinimum Recommendation Maximum

Ramp-up rate to preheat*)

25 °C to 150 °C2 3 K/s

Time tSTSmin to TSmax

tS 60 100 120 s

Ramp-up rate to peak*)

TSmax to TP

2 3 K/s

Liquidus temperature TL 217 °C

Time above liquidus temperature tL 80 100 s

Peak temperature TP 245 260 °C

Time within 5 °C of the specified peaktemperature TP - 5 K

tP 10 20 30 s

Ramp-down rate*TP to 100 °C

3 6 K/s

Time25 °C to TP

480 s

All temperatures refer to the center of the package, measured on the top of the component* slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range

Page 10: SFH 4235 - Osram · Group Total radiant flux 1) Total radiant flux 1) I F = 1000 mA; t p = 10 ms I F = 1000 mA; t p = 10 ms min. max. Φ e Φ e EA 630 mW 1000 mW EB 800 mW 1250 mW

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Taping 7)

OHAY0508

1.55 (0.061) 2 (0.079)

4 (0.157)

6.35 (0.250)

8 (0.315)

1.75

(0.0

69)

11.5

(0.4

53)

12.4

(0.4

88)

24 (0

.945

)

0.3 (0.012)

0.3 (0.012)

1.9 (0.075)

7.35

(0.2

89)

Cathode/Collector Side

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Tape and Reel 8)

D0

2P

P0

1P

WFE

Direction of unreeling

N

W1

2W

A

OHAY0324

Label

Leader:Trailer:

13.0

Direction of unreeling

±0.2

5

min. 160 mm *min. 400 mm *

*) Dimensions acc. to IEC 60286-3; EIA 481-D

Reel DimensionsA W Nmin W1 W2 max Pieces per PU

180 mm 24 + 0.3 / - 0.1 mm 60/100 mm 24.4 + 2 mm 30.4 mm 800

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Barcode-Product-Label (BPL)

Dry Packing Process and Materials 7)

OHA00539

OSRAM

Moisture-sensitive label or print

Barcode label

Desiccant

Humidity indicator

Barcode label

OSRAM

Please check the HIC immidiately afterbag opening.

Discard if circles overrun.Avoid metal contact.

WET

Do not eat.

Comparatorcheck dot

parts still adequately dry.

examine units, if necessary

examine units, if necessary

5%

15%

10%bake units

bake units

If wet,

change desiccant

If wet,

Humidity IndicatorMIL-I-8835

If wet,

Mois

ture

Level 3

Flo

or tim

e 168 H

ours

Mois

ture

Level 6

Flo

or tim

e 6

Hours

a) H

umid

ity In

dicato

r C

ard is

> 1

0% w

hen read a

t 23 ˚

C ±

5 ˚C

, or

reflo

w, v

apor-phase r

eflow

, or equiv

alent p

rocessin

g (peak p

ackage

2. Afte

r th

is b

ag is o

pened, devic

es that w

ill b

e subje

cted to

infrare

d

1. Shelf

life in

seale

d bag: 2

4 month

s at <

40 ˚

C a

nd < 9

0% rela

tive h

umid

ity (R

H).

Mois

ture

Level 5

a

at facto

ry c

onditions o

f

(if b

lank, s

eal date

is id

entical w

ith d

ate c

ode).

a) M

ounted w

ithin

b) S

tore

d at

body tem

p.

3. Devic

es require

bakin

g, befo

re m

ounting, i

f:

Bag s

eal date

Mois

ture

Level 1

Mois

ture

Level 2

Mois

ture

Level 2

a4. If b

aking is

require

d,

b) 2a o

r 2b is

not m

et.

Date

and ti

me o

pened:

refe

rence IP

C/J

ED

EC

J-S

TD

-033 fo

r bake p

rocedure

.

Flo

or tim

e see b

elow

If bla

nk, see b

ar code la

bel

Flo

or tim

e > 1

Year

Flo

or tim

e 1

Year

Flo

or tim

e 4

Weeks10%

RH

.

_<

Mois

ture

Level 4

Mois

ture

Level 5

˚C).

OPTO

SEM

ICO

NDUCTORS

MO

ISTURE S

ENSITIV

E

This b

ag conta

ins

CAUTION

Flo

or tim

e 72 H

ours

Flo

or tim

e 48 H

ours

Flo

or tim

e 24 H

ours

30 ˚C

/60%

RH

.

_<

LE

VE

L

If bla

nk, see

bar code la

bel

Moisture-sensitive product is packed in a dry bag containing desiccant and a humidity card according JEDEC-STD-033.

Page 13: SFH 4235 - Osram · Group Total radiant flux 1) Total radiant flux 1) I F = 1000 mA; t p = 10 ms I F = 1000 mA; t p = 10 ms min. max. Φ e Φ e EA 630 mW 1000 mW EB 800 mW 1250 mW

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Schematic Transportation Box 7)

OHA02044

PACKVAR:

R077Additional TEXT

P-1+Q-1

Multi TOPLED

Muste

r

OSRAM Opto

Semiconductors

(6P) BATCH NO:

(X) PROD NO:

10

(9D) D/C:

11(1T) LOT NO:

210021998

123GH1234

024 5

(Q)QTY: 2000

0144

(G) GROUP:

260 C RT240 C R

3

220 C R

MLBin3:Bin2: Q

-1-20

Bin1: P-1-20

LSY T6762

2a

Temp ST

R18DEMY

PACKVAR:

R077Additional TEXT

P-1+Q-1

Multi TOPLED

Muste

r

OSRAM Opto

Semiconductors

(6P) BATCH NO:

(X) PROD NO:

10

(9D) D/C:

11(1T) LOT NO:

210021998

123GH1234

024 5

(Q)QTY: 2000

0144

(G) GROUP:

260 C RT240 C R

3

220 C R

MLBin3:Bin2: Q

-1-20

Bin1: P-1-20

LSY T6762

2a

Temp ST

R18DEMY

OSRAM

Packing

Sealing label

Barcode label

Mois

ture

Level 3

Flo

or tim

e 168 H

ours

Mois

ture

Level 6

Flo

or tim

e 6

Hours

a) H

umid

ity In

dicato

r C

ard is

> 1

0% w

hen read a

t 23 ˚

C ±

5 ˚C

, or

reflo

w, v

apor-phase r

eflow

, or e

quivale

nt pro

cessing (p

eak package

2. Afte

r th

is b

ag is o

pened,

devices th

at will

be s

ubjecte

d to in

frare

d

1. Shelf

life in

seale

d bag: 2

4 month

s at <

40 ˚

C a

nd < 9

0% rela

tive h

umid

ity (R

H).

Mois

ture

Level 5

a

at facto

ry c

onditions o

f

(if b

lank, s

eal date

is id

entical w

ith d

ate c

ode).

a) M

ounted w

ithin

b) S

tore

d at

body te

mp.

3. Devic

es require

bakin

g, befo

re m

ounting, i

f:

Bag s

eal date

Mois

ture

Level 1

Mois

ture

Level 2

Mois

ture

Level 2

a4. If b

aking is

require

d,

b) 2a o

r 2b is

not m

et.

Date

and ti

me o

pened:

refe

rence IP

C/J

ED

EC

J-S

TD-0

33 for bake p

rocedure

.

Floor

time s

ee belo

w

If bla

nk, see b

ar code la

bel

Flo

or tim

e > 1

Year

Floor

time

1 Y

ear

Flo

or tim

e 4

Weeks10%

RH

.

_<

Mois

ture

Level 4

Mois

ture

Level 5

˚C).

OPTO

SEM

ICONDUCTO

RS

MO

ISTURE S

ENSITIV

E

This b

ag conta

ins

CAUTION

Flo

or tim

e 72 H

ours

Flo

or tim

e 48 H

ours

Flo

or tim

e 24 H

ours

30 ˚C

/60%

RH

.

_<

LE

VE

L

If bla

nk, see

bar code la

bel

Barcode label

Dimensions of Transportation BoxWidth Length Height

195 ± 5 mm 195 ± 5 mm 42 ± 5 mm

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NotesDepending on the mode of operation, these devices emit highly concentrated visible and non visible light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1.

Subcomponents of this device contain, in addition to other substances, metal filled materials including silver. Metal filled materials can be affected by environments that contain traces of aggressive substances. There-fore, we recommend that customers minimize device exposure to aggressive substances during storage, production, and use. Devices that showed visible discoloration when tested using the described tests above did show no performance deviations within failure limits during the stated test duration. Respective failure limits are described in the IEC60810.

For further application related information please visit www.osram-os.com/appnotes

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Disclaimer

Attention please!The information describes the type of component and shall not be considered as assured characteristics.Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances.For information on the types in question please contact our Sales Organization.If printed or downloaded, please find the latest version on the OSRAM OS website.

PackingPlease use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred.

Product and functional safety devices/applications or medical devices/applicationsOSRAM OS components are not developed, constructed or tested for the application as safety relevant component or for the application in medical devices.OSRAM OS products are not qualified at module and system level for such application.

In case buyer – or customer supplied by buyer – considers using OSRAM OS components in product safety devices/applications or medical devices/applications, buyer and/or customer has to inform the local sales partner of OSRAM OS immediately and OSRAM OS and buyer and /or customer will analyze and coordi-nate the customer-specific request between OSRAM OS and buyer and/or customer.

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Glossary1) Total radiant flux: Measured with integrating sphere.2) Reverse Operation: Reverse Operation of 10 hours is permissible in total. Continuous reverse opera-

tion is not allowed.3) Radiant intensity: Measured at a solid angle of Ω = 0.01 sr4) Thermal resistance: junction - soldering point, of the device only, mounted on an ideal heatsink (e.g.

metal block)5) Typical Values: Due to the special conditions of the manufacturing processes of semiconductor devic-

es, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could dif-fer from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice.

6) Testing temperature: TA = 25°C (unless otherwise specified)7) Tolerance of Measure: Unless otherwise noted in drawing, tolerances are specified with ±0.1 and

dimensions are specified in mm.8) Tape and Reel: All dimensions and tolerances are specified acc. IEC 60286-3 and specified in mm.

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Revision HistoryVersion Date Change

1.6 2019-07-15 Discontinued

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Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-93055 Regensburg www.osram-os.com © All Rights Reserved.