Session 4: pn junctionee.sharif.edu/~sarvari/25772/SSD_03.pdf · 11/11/2011 1 Session 4: pn...
Transcript of Session 4: pn junctionee.sharif.edu/~sarvari/25772/SSD_03.pdf · 11/11/2011 1 Session 4: pn...
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Session 4: pn junction
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HomojunctionHomojunction: the junction is between two regions of the same material
HeterojunctionHeterojunction: the junction is between two different semiconductors
Approximations used in the step-junction model
1. The doping profile is a step function. On the n-type side, N'D = ND – NA and is constant.
On the p side, N'A = NA – ND and is constant.
2. All impurities are ionized. Thus the equilibrium electron concentration on the n side is
nn0 = N'D . The equilibrium hole concentration on the p side is pp0 = N'A.
3. Impurity-induced band-gap narrowing effects are neglected.
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(a) The physical picture of a planar pn junction; (b) cross section through A − A’; (c)
schematic representation of the pn junction; (d) typical doping profile showing a p-
type substrate with implanted donors (the junction occurs where ND − NA); (e) the net
doping concentration ND − NA for this junction, and the step approximation (dashed
line). (x0=metallurgical junction)
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Doping Profile:
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electrically neutral in every region
work function φ: φ = Evac – Ef
φn ≠ φp
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n-ty
pe
p-t
ype
Ef
Ef
EC
EV
EC
EV
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n-ty
pe
p-t
ype
E
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n-ty
pe
p-t
ype
Ef
EC
EV
depletion region
Remember dEf/dx = 0 under equilibrium.
Band bending occurs around the metallurgical junction!
Vbi
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n-ty
pe
p-t
ype
Ef
EC
EV
depletion region
E
I
V
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n-ty
pe
p-t
ype
Ef
EC
EV
depletion region
E
I
VVR
Ef
qVR
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n-ty
pe
p-t
ype
Ef
EC
EV
depletion region
E
I
VVF
Ef qVF
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n-ty
pep
-type
Ef
EC
EV
depletion regionI
V
E
E
V
x
x
E x
xρ-xp xn
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The Depletion Approximation : Obtaining closed-form
solutions for the electrostatic variables
Charge Distribution : ρ= q(p - n + ND - NA)
Note that(1) -xp ≤x ≤xn : p & n are negligible (∵ E exist).
(2) x ≤-xp or x ≥xn : ρ= 0
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1. Find the built-in potential Vbi
2. Use the depletion approximation → ρ (x)
(depletion-layer widths xp, xn unknown)
3. Integrate ρ (x) to find EEEE(x)
boundary conditions EEEE(-xp)=0, EEEE(xn)=0
4. Integrate EEEE(x) to obtain V(x)
boundary conditions V(-xp)=0, V(xn)=Vbi
5. For EEEE(x) to be continuous at x=0, NAxp = NDxn
solve for xp, xn
Ef
EC
EV
qVbi
x
ρ
-xp
xn
qND
-qNA
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Ef
EC
EV
Ei
For non-degenerately doped material:
What shall we do for p+n (or n+p) junction?!?!?
p+ n+
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The electric field is continuous at x = 0
x
ρ
-xp xn
qND
-qNA
Charge neutrality condition as well!
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x
ρ
-xp xn
qND
-qNA
x
V
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Summing, we have:
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If NA >> ND as in a p+n junction:
Note:
A p+n junction has NA=1020 cm-3 and ND =1017cm-3. What is
a) its built in potential,
b) W ,
c) xn , and
d) xp
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VA dropped here 1) Low level injection
2) Zero voltage drop (E=0)
p-t
ype depletion region
E
n-ty
pe
VA
Negligible voltage drop
(Ohmic contact)
Since (E=0) may apply
minority carrier diffusion
equations
will apply continuity
equation in this region
Note: VA should be significantly smaller than Vbi (Otherwise, we cannot assume low-level injection)
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Energy Band Diagram
1) The Fermi level is omitted from the depletion
region because the device is no longer in
equilibrium: We need the quasi Fermi energy level.
2) Efp - Efn = -qVA
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Now as we assumed all voltage drop is in the depletion region (Note that VA ≤ Vbi)
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The junction width for one-sided step junctions in silicon as a function of junction voltage
with the doping on the lightly doped side as a parameter.
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Junction width for a one-sided junction is plotted as a function of doping on the lightly
doped side for three different operating voltages.
Assumption :
1) low-level injection: (or in p-type)
(or in n-type)
2) In the bulk, ,
3) For minority carriers in quasi-neutral region
4) Nondegenerately doped step junction
5) Long-base diode in 1-D (both sides of quasi-neutral regions are much longer
than their minority carrier diffusion lengths, Ln or Lp)
6) No Generation/Recombination in depletion region
7) Steady state
8) Gopt = 0
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Game plan:
i) continuity equations for minority carriers
ii) minority carrier current densities in the quasi-neutral region
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Solution is
VA
x’x’’x
x
diode is long enough!
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Now! we need to find and vs
V
x’x’’ x
x
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V
x’x’’ x
x
x
forward
reverse
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asymmetrically doped junction
If p+n diode (NA » ND), then
If n+p diode (ND » NA), then
That is, one has to consider only the lightly doped side of such junction in
working out the diode I-V characteristics.
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V=0
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V>0
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The minority carrier concentrations on either side of the junction under forward bias
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V
x’x’’ x
xforward
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x
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In general
(0'') (0')n p
J J J= +
( '')nJ x( ')pJ x
Steady state
similarly
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Diode in break down has application!
Va
- High level injection- Bulk ohmic drop
Diffusion current
Thermal recombinationin the depletionregion
slope=q/2kT
ideal=q/kT
high levelinjectionslope =q/2kT
IRslog(I)Va
I
Thermal generation in the depletion region
Avalach or Zenerprocess
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multiplication factor
Ef
EC
EV
Ef
EG
Iin
Iout
X lattice scattering occurs when the minority carriers that cross the
depletion region under the influence of the electric
field gain sufficient kinetic energy to be able to break
covalent bands in atoms with which they collide.
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For non-degenerately doped material:
U
( )V x
x
For U >> E ,
Ef
EC
EV
Ef
W
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Thermal equilibrium
Reminder1:
Effective carrier life time
Reminder2:log( , )n p
0pn
0pp
x
0( ) qV kT
p pn x n e− =0
( )qV kT
n np x p e=
0nn
0np
reverse
In depletion region: Generation > Recombination
EC
EV
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Thermal equilibriumReminder1:
Reminder2:
In depletion region: Recombination > Generation
log( , )n p
0pn
0pp
xnL
0( ) qV kT
p pn x n e− =
0( )qV kT
n np x p e=
pL
0nn
0np
np
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Low level injection All of the relations was based
on the low level injection
condition as:
x
High level injection
x
Minority << Majority
In High level injection
condition we should add
recombination current to the
continuity equations fro the
minority carriers, result will
be as:
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We assumed that the electric field outside the
depletion region is zero; which means as
semiconductor is treated as a perfect(ideal)
conductor.
But actually the conductivity is limited to
Hence the “ohmic voltage drop” outside
depletion region becomes considerable
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A small ac signal (va) is
superimposed on the DC bias.
This results in ac current (i). Then,
admittance Y is given by
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where
Junction (depletion layer) capacitance
p
Reverse bias conductance
step junction
linear junction
C-V curve is very useful for characterization of the devices
A pn junction under reverse bias behaves like a capacitor.Such capacitors are used in ICs as voltage-controlled capacitors.
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C-V data from a pn junction is routinely used to determine the doping profile on
the lightly doped side of the junction.
If the doping on the lightly doped
side is uniform, a plot of 1/CJ2
versus VA should be a straight line
with a slope inversely proportional
to NB and an extrapolated 1/CJ2 = 0
intercept equal to Vbi.
1/Cj2
[F–2 ]
VA [Volts]
Intercept = Vbi
0
1
2
0–5–10
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Hence , in reverse bias, ideally
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Junction capacitance
diffusion resistance
diffusion capacitance
ohmic (physical) resistance
Function of bias
point and frequency
xxn-xp
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Phasor representation
where
Re{}= Im{}=G Cω
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Turn-off transient storage time
recovery time
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for
charge control for p+n diode
but for
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Turn-on transient
If we define