Semiconductor Nanomaterials (I): Quantum Dots...Semiconductor Nanomaterials (I): Quantum Dots • In...
Transcript of Semiconductor Nanomaterials (I): Quantum Dots...Semiconductor Nanomaterials (I): Quantum Dots • In...
Semiconductor
Nanomaterials (I):
Quantum Dots
• In bulk crystalline lattices the Schroedinger equation for
the periodic potential V(r) = V(r+a), where a is the lattice
spacing, is of the form
• The time-independent wave-function is
• u(r) is periodic with periodicity a, and the energy
• eigenvalues are
• me,h is the effective mass of the electron or hole
Electrons in Solids
y r( ) = eikru r( )
Schematic plot of the single particle energy spectrum in a bulk
semiconductor for both the electron and hole states on the left
side of the panel with appropriate electron (e) and hole (h)
discrete quantum states shown on the right. The upper
parabolic band is the conduction band, the lower the valence.
Consider a spherical crystal with a diameter D (=2R). For a quantum
structure D ≤
λ = h/p (de Broglie’s wavelength).
• At T = 300 K, take E=(3/2)kBT=p2/2me to get λ ~ 6 nm.
• Now the Schroedinger equation for the spherical quantum dot (QD) is of
the form
where
• The wavefunction may be written in terms of Associated Legendre R
polynomials, Bessel functions, and spherical harmonics. The energies of
electrons or holes are
where n and l are the principal and angular momentum quantum numbers
and are the zeroes of the Bessel functions.
• The photon energy required to produce the electron-hole pair (exciton) is
Quantum Confinement – 3D QD
Vi ri( ) =0 for ri < R
¥ for ri > Ri = e,h y re, rh( ) = ye re( )yh rh( )
Solutions of quantum dots of varying size. Note the variation
in color of each solution illustrating the particle size
dependence of the optical absorption for each sample. Note
that the smaller particles are in the red solution (absorbs
blue), and that the larger ones are in the blue (absorbs red).
Nanoparticles and
Quantum Dots
Using oxidation/reduction in solutions to
create nano‐elements such as quantum dots,
metal particles, and insulator particles
Nanoparticle Chemical Growth:
Solution/Colloidal Chemistry
The principle for colloidal synthesis of semiconductor
nanocrystals is based on a study by Le Mur and Dinegar, which
showed that a temporally short cluster nucleation event
followed by controlled slow growth on the existing nuclei results
in the formation of monodispersed colloids
Colloidal Growth of Nanocrystals
- In practice, reagents are rapidly injected to a
vessel charged with hot coordinating solvent, thus
raising the concentration above nucleation
threshold. This is possible when the temperature is
sufficient to decompose the reagents forming a
supersaturated solution species.
- Supersaturation is followed by a short nucleation
period that partially relieves the supersaturation
- This results in a drop in concentration of species
below the critical concentration for nucleation, and
the clusters “bang” out of solution. As long as the
rate of addition of precursor does not exceed the
rate at which it is consumed by the growing
nanocrystals, no additional nuclei form.
- Since the growth of the nanocrystals is similar, the
size distribution is mainly governed by the time
over which the nuclei are formed and continue to
grow. For increasing reaction time the larger and
more
uniform the nanocrystals become and thus gives
one control over size.
From Whitesides and Love, Scientific American Sept 2001
Wolf, Edward L., “Introduction”, Nanophysics and Nanotechnology: An Introduction to Modern Concepts in Nanoscience, 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Functionalization
• The synthesis of group II-VI semiconductors ME, where M
= zinc, cadmium or mercury and E = sulfur, selenium, or
tellerium are prepared using metal alkyl group II sources, e.
g, dimethylcadmium, diethylzinc, and dibenzylmercury, and
organophosphine chalcogenides (R3PE) or
bistrimethylsilylchalogenides (TMS2E), where E = S, Se or
Te. The coordinating solvents (150 – 350 °C) are often long
chain alkylphosphines (R3P), alkylphosphine oxides
(R3PO).
• For group III-V semiconductors InE, where E = phosphorus
and arsenic the In precursors {InCl(C2O4)} is already present
in the coordinating solvent [R3P/R3PO] prior to injection of
the TMS2E, where E = P or As.
Colloidal Growth of Compound
Semiconductor QDs
• Another method of synthesis of quantum dots is through epitaxial growth
(from vapor or liquid) of clusters on a substrate.
• The epitaxial growth method allows for a wide range of control of
principally the order of the quantum dots on a substrate since through this
method a regular array is achievable through selective growth conditions.
• Once the material gets to the substrate and if there is sufficient energy
and number density, the atoms on the surface can move in 2D across the
surface and agglomerate into either; a dilute array of well ordered small
clusters ( # of atoms per cluster < 20) or a random agglomeration of
clusters that can range in size from < 1 nm to many microns.
• In the first case, a well ordered array of small clusters on a substrate
requires especially stringent growth conditions in order to achieve the dilute
film morphology.
• Quantum dot size control is achieved by keeping the amount of material
on the substrate low and ambient conditions pristine.
Epitaxial Growth of Quantum Dots
Atomic Force Microscope images of Ge clusters on two types
of surfaces. Graphite in the left two panels, and SiO2 in the
right. The line plots on the figure give vertical profiles of line
cuts through the AFM images directly above and give the
quantitative size information
Illustration of a cross sectional view of Si quantum dots
formed in a glass matrix via ion implantation. Note that the
random arrangement and spherical shape of the quantum dot
particles is expected for quantum dots implanted in an
amorphous media.
QDs Formed by Ion Implantation
Photoluminescence spectra from Si (400 keV, 1.53 x 1017 cm-
2) implanted SiO2 as implanted and after annealing at 950 and
1100 °C. (by permission of the American Institute of Physics.)
Scanning electron micrograph of quantum dot patterns on a
GaSb surface induced by Ar-ion sputtering with an ion energy
of 500 eV. The dots show a hexagonal ordering with a
characteristic wavelength that depends on ion energy. The
insets show the corresponding distribution of the nearest-
neighbor distance. (by permission of the American Physical
Society.)