Selector Guide

Selector Guide Plastic-Encapsulated Transistors GreenLine Portfolio Devices Small-Signal Field-Effect Transistors and MOSFETs Small-Signal Tuning and Switching Diodes Tape and Reel Specifications and Packaging Specifications Surface Mount Information Package Outline Dimensions Reliability and Quality Assurance Replacement Devices Alphanumeric Index

1 2 3 4 5 6 7 8 9 10 11

Motorola Small-Signal Transistors, FETs and Diodes Device Data

TMOS is a registered trademark of Motorola Inc. HDTMOS and GreenLine are trademarks of Motorola Inc. Thermal Clad is a trademark of the Bergquist Company.

Motorola Small-Signal Transistors, FETs and Diodes Device Data

SMALLSIGNAL TRANSISTORS, FETs AND DIODESThis publication presents technical information for the several product families that comprise the Motorola smallsignal semiconductor line. The families include bipolar transistors, fieldeffect transistors, and diodes. These are available in a variety of through hole and surface mount packages. Complete device specifications and typical performance curves are given on individual data sheets, which are grouped by the various families. A quick comparison of performance characteristics is presented in the easytouse selector guide in the first section. The tables will assist in the selection of the proper device for a specific application. Seperate sections are included to describe package outline drawings and footprints and product reliability and quality considerations. The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor devices any license under the patent rights to the manufacturer. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

Motorola, Inc. 1997 Previous Edition 1994 Printed in U.S.A. All Rights Reserved

Motorola SmallSignal Transistors, FETs and Diodes Device Data

i

About This RevisionTo accomodate the increasing requirements for surface mount components, this publication adds a variety of device types in several choices of surface mount packages. An expanded MOSFET portfolio to include new lower RDS(on) HDTMOS devices in the TSOP6 package. Dual transistors and diodes in the SC70 multilead package. A Family of transistors and diodes in the smaller SC90 package. It should be noted that Metal Can Transistors previously listed in this data book have been removed for this revision. Replacement devices for these parts can be found in Chapter 10.

ii


Motorola Device ClassificationsIn an effort to provide current information to the customer regarding the status of any given device, Motorola has classified all devices into three categories: Preferred devices, Current product and Not Recommended for New Design products. A Preferred device is a device which is recommended as a first choice for future use. These devices are preferred by virtue of their performance, price functionality, or combination of attributes which offer the overall best value to the customer. This category contains both advanced and mature devices which will remain available for the foreseeable future (generally 3 to 5 years). Device types identified as current are not a first choice product for new designs, but will continue to be available because of the popularity and/or standardization or volume usage in current production designs. These products can be acceptable for new designs but the preferred types are considered better alternatives for long term usage.Any device that has not been identified as a preferred device is a current device.

Products designated as Not Recommended for New Design may become obsolete as dictated by poor market acceptance, or a technology or package that is reaching the end of its life cycle. Devices in this category have an uncertain future and do not represent a good selection for new device designs or long term usage.All Not Recommended for New Design devices have been removed from the data book. In the event the device you need is no longer found within an appropriate section of the data book, refer to the Replacement Devices index at the back of the book to see if there is a Replacement Part for the device in question.


iii

Table of ContentsSelector Guide . . . . . . . . . . . . . . . . . . . . . 11Bipolar Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 PlasticEncapsulated Transistors . . . . . . . . . . . . . . . . 12 PlasticEncapsulated Multiple Transistors . . . . . . . . . 18 PlasticEncapsulated Surface Mount Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110 FieldEffect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . 118 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118 TMOS FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 Surface Mount FETs . . . . . . . . . . . . . . . . . . . . . . . . . . 121 Tuning and Switching Diodes . . . . . . . . . . . . . . . . . . . . . 123 Tuning Diodes Abrupt Junction . . . . . . . . . . . . . . . 123 Tuning Diodes HyperAbrupt Junction . . . . . . . . 126 Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 Switching Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131 Multiple Switching Diodes . . . . . . . . . . . . . . . . . . . . . . 135 GreenLine Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . 136 Small Signal MultiIntegrated Devices . . . . . . . . . . . 138

SmallSignal Tuning and Switching Diodes . . . . . . . . . . . . . . . . . . 51Embossed Tape and Reel . . . . . . . . . . . . . . . . . . . . . . . . . Radial Tape in Fan Fold Box or Reel . . . . . . . . . . . . . . . . Device Markings/Date Code Characters . . . . . . . . . . . . . Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 52 52 53

Tape and Reel Specifications and Packaging Specifications . . . . . . . . . . . . 61Tape and Reel Specifications . . . . . . . . . . . . . . . . . . . . . . 62 Packaging Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . 65

Surface Mount Information . . . . . . . . . 71Information for Using Surface Mount Packages . . . . . . . 72 Footprints for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . 74

Package Outline Dimensions . . . . . . . 81Package Outline Dimensions . . . . . . . . . . . . . . . . . . . . . . . 82

PlasticEncapsulated Transistors . . . 21Embossed Tape and Reel . . . . . . . . . . . . . . . . . . . . . . . . . Radial Tape in Fan Fold Box or Reel . . . . . . . . . . . . . . . . Device Markings/Date Code Characters . . . . . . . . . . . . . Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 22 22 23

Reliability and Quality Assurance . . . 91Outgoing Quality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reliability Data Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Air Flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Activation Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reliability Stress Tests . . . . . . . . . . . . . . . . . . . . . . . . . . . . Statistical Process Control . . . . . . . . . . . . . . . . . . . . . . . . . 92 92 94 94 94 95 97

GreenLine Portfolio . . . . . . . . . . . . . . . 31Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

SmallSignal FieldEffect Transistors and MOSFETs . . . . . . . . . . . . 41Embossed Tape and Reel . . . . . . . . . . . . . . . . . . . . . . . . . Radial Tape in Fan Fold Box or Reel . . . . . . . . . . . . . . . . Device Markings/Date Code Characters . . . . . . . . . . . . . Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 42 42 43

Replacement Devices . . . . . . . . . . . . . 101 Alphanumeric Index . . . . . . . . . . . . . . . 111

iv


Section 1Selector Guide

In Brief . . .This selector guide highlights semiconductors that are the most popular and have a history of high usage for the most applications. A large selection of encapsulated plastic transistors, FETs and diodes are available for surface mount and insertion assembly technology. Plastic packages include TO-92 (TO226AA), 1-Watt TO-92 (TO226AE), SOT-23, SC-70/SOT-323, SC90/SOT416, SC-59, SOD-123, SOT223, SOT363, and TSOP6. Plastic multiples are available in 14pin and 16pin dualinline packages for insertion applications: SO14 and SO16 for surface mount applications.


Selector Guide 11

Bipolar TransistorsCASE 2905 TO226AE 1WATT (TO92)

PlasticEncapsulated TransistorsMotorolas Small Signal TO226 plastic transistors encompass hundreds of devices with a wide variety of characteristics for generalpurpose, amplifier and switching applications. The popular highvolume package combines proven reliability, performance, economy and convenience to provide the perfect solution for industrial and consumer design problems. All devices are laser marked for ease of identification and shipped in antistatic containers, as part of Motorolas ongoing practice of maintaining the highest standards of quality and reliability.

1

23

1

23

CASE 2904 TO226AA (TO92)

Table 1. PlasticEncapsulated GeneralPurpose Transistors These generalpurpose transistors are designed for smallsignal amplification from dc to low ratio frequencies. They are also useful as oscillators and generalpurpose switches. Complementary devices shown where available (Tables 14).V(BR)CEO Volts Min fT @ IC MHz Min mA IC mA Max hFE @ IC Min Max mA NF dB Max

NPN

PNP

Style

Case 2904 TO226AA (TO92)MPS8099 MPSA06 2N4410 BC546 BC546B MPSA05 BC182 BC237B BC337 BC547 BC547A BC547B BC547C MPSA20 MPS2222A 2N4401 2N4400 MPS6602 2N3903 2N3904 BC548 BC548A BC548B BC548C 2N4123 2N4124 BC338(1) Typical

MPS8599 MPSA56 BC556 BC556B MPSA55 MPS2907A BC212 BC307B BC327 BC557 BC557A BC557B BC557C MPSA70 2N4403 2N4402 MPS6652 2N3905 2N3906 BC558B 2N4125 BC328

80 80 80 65 65 60 60 50 45 45 45 45 45 45 40 40 40 40 40 40 40 30 30 30 30 30 25 25

150 100 60 150 150 100 200 200(1) 150 210(1) 150 150 150 150 125 300 200 150 100 200 250 300(1) 300(1) 300(1) 300 200 250 210(1)

10 10 10 10 10 10 50 10 10 10 10 10 10 10 5.0 20 20 20 50 10 10 10 10 10 10 10 10 10

500 500 250 100 100 500 600 100 100 800 100 100 100 100 100 600 600 600 1000 200 200 100 100 100 100 200 200 800

100 100 60 120 180 100 100 120 200 100 120 120 180 380 40 100 100 50 50 50 100 110 120 200 420 50 120 100

300 400 450 450 300 500 460 630 800 220 450 800 400 300 300 150 150 300 800 220 450 800 150 360 630

1.0 100 10 2.0 2.0 100 150 2.0 2.0 100 2.0 2.0 2.0 2.0 5.0 150 150 150 500 10 10 2.0 2.0 2.0 2.0 2.0 2.0 100

10 10 10 10 10 10 10 10 6.0 5.0 10 10 10 10 6.0 4.0

1 1 1 17 17 1 1 14 17 17 17 17 17 17 1 1 1 1 1 1 1 17 17 17 17 1 1 17

Devices listed in bold, italic are Motorola preferred devices.

Selector Guide 12


PlasticEncapsulated Transistors (continued)Table 1. PlasticEncapsulated GeneralPurpose Transistors (continued)V(BR)CEO Volts Min fT @ IC MHz Min mA IC A Max hFE @ IC Min Max mA VCE(sat) @ IC @ IB Volts Max mA mA Style

NPN

PNP

Case 2905 TO226AE (1WATT TO92)BDC01D BDB01C MPS6717 MPSW06 BDB02C MPSW56 100 80 80 80 50 50 50 50 200 200 200 200 0.5 0.5 0.5 0.5 40 40 80 80 400 400 100 100 50 50 0.7 0.7 0.5 0.4 1000 1000 250 250 100 100 10 10 14 1 1 1

Table 2. PlasticEncapsulated LowNoise and Good hFE Linearity These devices are designed to use on applications where good hFE linearity and lownoise characteristics are required: Instrumentation, hifi preamplifier.hFE @ IC V(BR)CEO Volts Min Max mA VT(4) mV Typ NF(5) dB Max fT MHz Typ

NPN

PNP

Style

Case 2904 TO226AA (TO92) MPS6428 BC239 BC550B BC550C MPSA18 MPS3904 BC549B BC549C 2N5088 2N5089(6)

MPS6521(1) (2) (4) (5) (7) (8)

2N5087 BC560C MPS3906 MPS4250 BC559B BC559C MPS6523

50 50 45 45 45 45 40 40 30 30 30 25 25

250 250 120 180 380 500 100 250 200 380 350 450 300

800 650 800 450 800 300 450 800 600

0.1 0.1 2.0 2.0 2.0 1.0 10 10 2.0 2.0 1.0 1.0 2.0

7.0(7) 9.5 6.5(1)

2.0 3.5(8) 2.0(1) 2.5 2.5 5.0 2.0 2.5 2.5 3.0 2.0 3.0

40(2) 100(2) 280 250 250 160 200(2) 250 250 50 50

1 1 17 17 17 1 1 1 17 17 1 1 1

Typical Min VT : Total Input Noise Voltage (see BC413/BC414 and BC415/BC416 Data Sheets) at RS = 2.0 k , IC = 200 A, VCE = 5.0 Volts. NF: Noise Figure at RS = 2.0 k, IC = 200 A, VCE = 5.0 Volts. f = 30 Hz to 15 kHz. RS = 10 k , BW = 1.0 Hz, f = 100 MHz RS = 500 , BW = 1.0 Hz, f = 10 MHz



Selector Guide 13

PlasticEncapsulated Transistors (continued)Table 3. PlasticEncapsulated Darlington Transistors Darlington amplifiers are cascade transistors used in applications requiring very highgain and input impedance. These devices have monolithic construction.hFE @ IC NPN PNP V(BR)CEO Volts IC Max Min Max mA VCE(sat) @ IC & IB Volts Max mA mA f T @ IC Min mA Style

Case 2905 TO226AE (1WATT TO92)MPSW45A MPSW6450 30 1000 1000 25K 20K 150K 200 100 1.5 1.5 1000 100 2.0 0.1 100 125 200 10 1 1

Case 2904 TO226AA (TO92)MPSA29 BC373 MPSA27 BC618 2N6427 2N6426 MPSA14 MPSA13 BC517 MPSA77 MPSA75 MPSA64 MPSA63 100 80 60 55 40 40 40 30 30 30 500 1000 500 1000 500 500 500 500 500 1000 10K 10K 10K 10K 10K 20K 30K 20K 10K 30K 160K 50K 200K 300K 100 100 100 200 100 100 100 100 100 20 1.5 1.1 1.5 1.1 1.5 1.5 1.5 1.5 1.5 1.0 100 250 100 200 100 500 500 100 100 100 0.1 0.25 0.1 0.2 0.1 0.5 0.5 0.1 0.1 0.1 125 100 150 125 125 125 200(1) 10 100 500 10 10 10 10 1 1 1 17 1 1 1 1 1 17

Table 4. PlasticEncapsulated HighCurrent Transistors The following table is a listing of devices that are capable of handling a higher current range for smallsignal transistors.V(BR)CEO Volts Min fT @ IC MHz Min mA IC mA Max hFE @ IC Min Max mA VCE(sat) @ IC & IB Volts Max mA mA Style

NPN

PNP

Case 2905 TO226AE (1WATT TO92)MPS6715 MPSW01A MPS6727 MPSW51A 40 40 50 50 1000 1000 50 50 1000 1000 0.5 0.5/0.7 1000 1000 100 100 1 1

Case 2904 TO226AA (TO92)BC489 BC639 MPS651 MPS650 BC368(1) Typical

BC490 BC640 MPS751 MPS750 BC369

80 80 60 40 20

200/150(1) 60 75 75 65

50 10 50 50 10

1000 500 2000 2000 1000

60 40 75 75 60

400 160

100 150 1000 1000 1000

0.3/0.5 0.5 0.5 0.5 0.5

1000 500 2000 2000 1000

100 50 200 200 100

17 14 1 1 1


Selector Guide 14


PlasticEncapsulated Transistors (continued)Table 5. PlasticEncapsulated HighVoltage Amplifier Transistors These highvoltage transistors are designed for driving neon bulbs and indicator tubes, for direct line operation, and for other applications requiring highvoltage capability at relatively low collector current. These devices are listed in order of decreasing breakdown voltage (V(BR)CEO).Device Type V(BR)CEO Volts Min IC Amp Max hFE @ IC Min mA VCE(sat) @ IC & IB Volts Max mA mA MHz Min f T @ IC mA Style

Case 2905 TO226AE (1WATT TO92) NPNMPSW42300 0.5 40 30 0.5 20 2.0 50 10 1

Case 2905 TO226AE (1WATT TO92) PNPMPSW92300 0.5 25 30 0.5 20 2.0 50 10 1

Case 2904 TO226AA (TO92) NPNBF844 MPSA44 2N6517 BF393 MPSA42 2N5551 400 400 350 300 300 160 0.3 0.3 0.5 0.5 0.5 0.6 50 40 30 40 40 80 10 100 30 10 10 10 0.5 0.75 0.3 0.2 0.5 0.15 10 50 10 20 20 10 1.0 5.0 1.0 2.0 2.0 1.0 40 50 50 100 10 10 10 10 1 1 1 1 1 1

Case 2904 TO226AA (TO92) PNPBF493S 2N6520 MPSA92 2N6519 2N5401 350 350 300 300 150 0.5 0.5 0.5 0.5 0.6 40 30 40 45 60 10 30 10 30 10 20 0.3 0.5 0.3 0.2 20 10 20 10 10 2.0 1.0 2.0 1.0 1.0 50 40 50 40 100 10 10 10 10 10 1 1 1 1 1

Case 2904 TO226AA (TO92)V(BR)CEO Volts Min 300 250 IC Amp Cont 0.5 0.5 hFE @ IC Min 50 50 mA 25 25 VCE(sat) @ IC & IB Volts Max 2.0 2.0 mA 20 20 mA 2.0 2.0 f T @ IC MHz Min 60 60 mA 10 10 Style 14 14

NPN BF420 BF422

PNP BF421 BF423



Selector Guide 15

PlasticEncapsulated Transistors (continued)Table 6. PlasticEncapsulated RF Transistors The RF transistors are designed for smallsignal amplification from RF to VHF/UHF frequencies. They are also used as mixers and oscillators in the same frequency ranges.V(BR)CEO Volts Min IC mA Max hFE @ IC Min mA VCE V fT MHz Typ CRE/CRB pF Max NF dB Typ

Device Type

f MHz

Style

Case 2904 TO226AA (TO92) NPNBF224 MPSH11 MPSH10 BF199 BF959 MPSH17 MPS918 MPS5179 MPS3563 30 25 25 25 20 15 15 12 12 50 100 100 50 50 50 30 60 60 40 40 25 20 25 20 7.0 4.0 4.0 7.0 20 5.0 8.0 3.0 8.0 10 10 10 10 10 10 10 1.0 10 600 650(2) 650(2) 750 600(2) 800(2) 600(2) 2000(3) 800 0.28 0.9 0.65 0.35 0.65 0.9 1.7 1.7 2.5 2.5 3.0 6.0(3) 6.0(3) 5.0(3) 6.0(3) 100 35 200 200 60 200 60 21 2 2 21 21 2 1 1 1

Case 2904 TO266AA (TO92) PNPMPSH8120 50 60 5.0 10 600(2) 0.85 2

Table 7. PlasticEncapsulated HighSpeed Saturated Switching Transistorston & toff @ IC Device Type ns Max ns Max mA V(BR)CEO Volts Min hFE @ IC Min mA VCE(sat) @ IC & IB Volts Max mA mA fT @ IC MHz Min mA Style

Case 2904 TO226AA (TO92) NPN2N4264 MPS3646 MPS2369A(2) Min (3) Max (9) AGC Capable

25 18 12

35 28 18

10 300 10

15 15 15

40 30 40

10 30 10

0.22 0.2 0.2

10 30 10

1.0 3.0 1.0

300 350

10 30

1 1 1


Selector Guide 16


PlasticEncapsulated Transistors (continued)Table 8. PlasticEncapsulated Choppers Devices are listed in decreasing V(BR)EBO.Device Type V(BR)EBO Volts Min IC Amp(1) Max hFE @ IC Min mA VCE(sat) @ IC & IB Volts Max mA mA f T @ IC MHz Min mA Style

Case 2904 TO226AA (TO92) NPNMPSA1715 100 200 5.0 0.25 10 1.0 80 5.0 1

Case 2904 TO266AA (TO92) PNPMPS404A25 150 30 12 0.2 24 1.0 1

Table 9. PlasticEncapsulated Telecom Transistors These devices are special product ranges intended for use in telecom applications.PD mW 25C Amb IC mA Cont hFE @ IC @ VCE Min Max mA Volts fT MHz Min Style

Device Type

V(BR)CEO Volts

Case 2904 TO226AA (TO92) NPNP2N2222A 40 625 600 75 10 10 300 17

Case 2904 TO226AA (TO92) PNPP2N2907A(1) Typical

60

625

600

100

10

10

200

17



Selector Guide 17

PlasticEncapsulated Multiple TransistorsThe manufacturing trend has been toward printed circuit board design with requirements for smaller packages with more functions. In the case of discrete components the use of the multiple device package helps to reduce board space requirements and assembly costs. Many of the most popular devices are offered in the standard plastic DIP and surface mount IC packages. This includes smallsignal NPN and PNP bipolar transistors, Nchannel and Pchannel FETs, as well as diode arrays.14 1 CASE 64606 (TO116) STYLE 1

16 1 CASE 751B05 SO16 STYLE 4

Specification Tables The following short form specifications include Quad and Dual transistors listed in alphanumeric order. Some columns denote two different types of data indicated by either bold or italic typeface. See key and headings for proper identification. This applies to Table 10 and 11 of this section only.

KEYRef. Point Subscript Unit

hFE1 hFE2 VCE Volts IC Amp Max hFE @ IC MinCommonemitter DC Current Gain. Units for test Current: A ampere m mA u A

TYPE NO.Alphanumeric listing type numbers Identification Code

ID

PD Watts One Die Only

VBE mV Max

Gp dB Min

NF @ dB Max

f

fT MHz Min

Cob pF Max

ton ns Max

toff ns Max

VCE @ (sat) Volts Max

IC IB

& IC Unit

First Letter: Polarity C both types in multiple device N NPN P PNP Second Letter: Use A General Purpose Amplifier E Low Noise Audio Amplifier F Low Noise RF Amplifier G General Purpose Amplifier and Switch H Tuned RF/IF Amplifier M Differential Amplifier S High Speed Switch D Darlington

Gp Power Gain NF Noise Figure f Test Frequency AUD 1015 kHz Frequency Units: H Hertz M MHz K kHz G GHz VCE(sat) CollectorEmitter Saturation Voltage IC Test Current Current Units: u A m mA A Amp hFE1/hFE2 Current Gain Ratio VBE Differential Base Voltage |VBE1 VBE2|. Differential Amplifiers ton turnon time toff turnoff time

CurrentGainBandwidth Product

Continuous (DC) Collector Current

Power Dissipation specified at 25C. Single die rating. Ref. Point: A Ambient Temperature C Case Temperature

Rated Minimum CollectorEmitter Voltage Subscript letter identifies base termination listed below in order of preference. SUBSCRIPT: 0 VCEO, open

Output Capacitance, commonbase. Shown without distinction: Ccb CollectorBase Capacitance Cre CommonEmitter Reverse Transfer Capacitance

Selector Guide 18


PlasticEncapsulated Multiple Transistors (continued)Table 10. PlasticEncapsulated Multiple Transistors Quad The following table is a listing of the most popular multiple devices available in the plastic DIP package. These devices are available in NPN, PNP, and NPN/PNP configurations. (See note.)hFE1 PD Watts One Die Only hFE2 VCEO Volts IC Amp Max hFE @ IC Min fT MHz Min Cob pF Max VBE mV Max toff ns Max Gp dB Min VCE (sat) Volts Max NF @ dB Max Typ(1) f

Device

ID

ton ns Max

@

IC IB IC

Case 64606 TO116MPQ2222A MPQ2369 MPQ2483 MPQ2484 MPQ2907A MPQ3467 MPQ3725 MPQ3762 MPQ3798 MPQ3799 MPQ3904 MPQ3906 MPQ6001 MPQ6002 MPQ6100A MPQ6426 MPQ6502 MPQ6600A1 MPQ6700 MPQ6842 MPQ7043 MPQ7042 MPQ7051 MPQ7093NA NS NA NA PA PS NS PS PA PA NG PG CG CG CA ND CG CA CA CA NA NA CG PA 0.65 0.5 0.625 0.625 0.65 0.75 1.0 0.75 0.625 0.625 0.5 0.5 0.65 0.65 0.5 0.5 0.65 0.5 0.5 0.75 0.75 0.75 0.75 0.75 40 15 40 40 60 40 40 40 40 60 40 40 30 30 45 30 30 45 40 40 250 200 150 250 0.5 0.5 0.05 0.05 0.6 1.0 1.0 1.5 0.05 0.05 0.2 0.2 0.5 0.5 0.05 0.5 0.5 0.05 0.2 0.5 0.5 0.5 0.5 0.5 100 40 150 300 100 20 25 35 150 300 75 75 40 100 150 10K 100 150 70 70 25 25 25 25 150 m 10 m 1.0 m 1.0 m 150 m 500 m 500 m 150 m 0.1 m 0.1 m 10 m 10 m 150 m 150 m 1.0 m 100 m 150 m 1.0 m 10 m 10 m 1.0 m 1.0 m 1.0 m 1.0 m 200 450 50 50 200 125 250 150 60 60 250 200 200 200 50 125 200 50 200 300 50 50 50 50 8.0 4.0 35(1) 9.0(1) 285(1) 15(1) 0.3 0.25 10 10 3.0(1) 2.0(1) 10 10 10 10 3.0(1) 2.0(1) 10 10 10 10 4.0(1) 10 10 10 10 10 10 10 10 10 150 m 10 m AUD AUD 150 m 500 m 500 m 500 m AUD AUD 10 m 10 m 150 m 150 m AUD 100 m 150 m 1.0 m 1.0 m 0.5 m 20 m 20 m 20 m 20 m

8.0 25 10 15 4.0 4.0 4.0 4.5 8.0 8.0 4.0 8.0 8.0 4.0 4.5 4.5 5.0 5.0 6.0 5.0

45(1) 40 35 50

180(1) 90 60 120

0.4 0.5 0.45 0.55

37(1) 43(1) 30(1) 30(1) 30(1) 0.8 45

136(1) 155(1) 225(1) 225(1) 225(1) 20 150

0.2 0.25 0.4 0.4 1.5 0.4 0.25 0.25 0.15 0.5 0.5 0.7 0.5

Table 11. PlasticEncapsulated Multiple Transistors Quad Surface Mount The following table is a listing of the most popular multiple devices available in the plastic SOIC surface mount package. These devices are available in NPN, PNP, and NPN/PNP configurations.hFE @ IC Device V(BR)CEO V(BR)CBO Min mA MHz Min fT @ IC mA

Case 751B05 SO16MMPQ2222A MMPQ2369 MMPQ2907A MMPQ3467 MMPQ3725 MMPQ3904 MMPQ3906 MMPQ6700 (12)40 15 50 40 40 40 40 40 75 40 60 40 60 60 40 40 40 20 50 20 25 75 75 70 500 100 500 500 500 10 10 10 200 450 200 125 250 250 200 200 20 10 50 50 50 10 10 10

(1) Typical (12) NPN/PNP NOTE: Some columns show 2 different types of data indicated by either bold or italic typefaces. See key and headings.



Selector Guide 19

PlasticEncapsulated Surface Mount Transistors1

3

3 1 1 2 CASE 318D04 SC59 2 3

4

This section of the selector guide lists the smallsignal plastic devices that are available for surface mount applications. These devices are encapsulated with the latest stateoftheart mold compounds that enhance reliability and exhibit excellent performance in high temperature and high humidity environments. This package offers higher power dissipation capability for smallsignal applications.

2

CASE 31808 TO236AB SOT23

CASE 318E04 SOT223

3 1 2 CASE 41902 SC70/SOT323 1

6

5

3 4 1 2

3 CASE 419B01 SOT363

2

CASE 46301 SOT416/SC90

Table 12. PlasticEncapsulated Surface Mount GeneralPurpose Transistors The following tables are a listing of smallsignal generalpurpose transistors in the SOT23, SC59, SOT223, SC70, SC90, and SOT363 surface mount packages. These devices are intended for smallsignal amplification for DC, audio, and lower RF frequencies. They also have applications as oscillators and generalpurpose, low voltage switches. Pinout: 1Base, 2Emitter, 3Collector Devices are listed in order of descending breakdown voltage.hFE @ IC Device Marking V(BR)CEO Min Max mA fT MHz Min

Case 31808 TO236AB (SOT23) NPNBC846ALT1 BC846BLT1 BC81716LT1 BC81725LT1 BC81740LT1 BC847ALT1 BC847BLT1 BC847CLT1 MMBT2222ALT1 MMBT3904LT1 MMBT4401LT1 BC848ALT1 BC848BLT1 BC848CLT11A 1B 6A 6B 6C 1E 1F 1G 1P 1AM 2X 1J 1K 1L 65 65 45 45 45 45 45 45 40 40 40 30 30 30 110 200 100 160 250 110 200 420 100 100 100 110 200 420 220 450 250 400 600 220 450 800 300 300 300 220 450 800 2.0 2.0 100 100 100 2.0 2.0 2.0 150 10 150 2.0 2.0 2.0 100 100 200 200 200 100 100 100 200 300 250 100 100 100

Case 31808 TO236AB (SOT23) PNPBC856ALT1 BC856BLT1 MMBT2907ALT1 BC80716LT1 BC80725LT1 BC80740LT1 BC857ALT1 BC857BLT1 MMBT3906LT1 MMBT4403LT1 BC858ALT1 BC858BLT1 BC858CLT13A 3B 2F 5A 5B 5C 3E 3F 2A 2T 3J 3K 3L 65 65 60 45 45 45 45 45 40 40 30 30 30 125 220 100 100 160 250 125 220 100 100 125 220 420 250 475 300 250 400 600 250 475 300 300 250 475 800 2.0 2.0 150 100 100 100 2.0 2.0 10 150 2.0 2.0 2.0 100 100 200 200 200 200 100 100 250 200 100 100 100


Selector Guide 110


PlasticEncapsulated Surface Mount Transistors (continued)Table 12. PlasticEncapsulated Surface Mount GeneralPurpose Transistors (continued) Pinout: 1Base, 2Emitter, 3Collector Devices are listed in order of descending breakdown voltage.hFE @ IC Device Marking V(BR)CEO Min Max mA fT MHz Min

Case 318D04 SC59 NPNMSD601RT1 MSD601ST1 MSD602RT1 MSD1328RT1YR YS WR 1DR 25 25 25 20 210 290 120 200 340 460 240 350 2.0 2.0 150 500 150(1) 150(1) 200(1) 200(1)

Case 318D04 SC59 PNPMSB709RT1 MSB710RT1AR CR 25 25 210 120 340 240 2.0 150 100(1) 200(1)

Case 41902 SC70/SOT323 NPNBC818WT1 BC81825WT1 BC81840WT1 BC846AWT1 BC846BWT1 BC847AWT1 BC847BWT1 BC847CWT1 BC848AWT1 BC848BWT1 BC848CWT1 MMBT2222AWT1 MMBT3904WT1 MSC3930BT1 MSD1819ART16I 6F 6G 1A 1B 1E 1F 1G 1J 1K 1L 1P AM VB ZR 45 45 45 65 65 45 45 45 30 30 30 40 40 20 50 100 160 250 110 200 110 200 420 110 200 420 100 100 70 210 600 400 600 220 450 220 450 800 220 450 800 300 300 140 340 100 100 100 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 150 10 1.0 2.0 100 100 100 100 100 100 100 100 300 300 150

Case 41902 SC70/SOT323 PNPBC80825WT1 BC80840WT1 BC856AWT1 BC856BWT1 BC857AWT1 BC857BWT1 BC858AWT1 BC858BWT1 BC858CWT1 MMBT2907AWT1 MMBT3906WT1 MSB1218ART15F 6F 3A 3B 3E 3F 3J 3K 3L 20 2A BR 45 45 65 65 45 45 30 30 30 60 40 45 160 250 125 220 125 220 110 200 420 100 100 210 400 600 250 475 250 475 220 450 800 300 300 340 100 100 2.0 2.0 2.0 2.0 2.0 2.0 2.0 150 10 2.0 100 100 100 100 100 100 100 200 250

Case 419B01 SOT363 Dual NPNMBT3904DW1T1 MBT3904DW9T1MA MB 40 40 100 100 300 300 10 10 300 300

Case 419B01 SOT363 Dual PNPMBT3906DW1T1 MBT3906DW9T1(1) Typical

A2 A3

40 40

100 100

300 300

10 10

250 250



Selector Guide 111

C (OUT)

PlasticEncapsulated Surface Mount Transistors (continued)Table 12. PlasticEncapsulated Surface Mount GeneralPurpose Transistors (continued) Pinout: 1Base, 2Emitter, 3Collector Devices are listed in order of descending breakdown voltage.hFE @ IC Device Marking V(BR)CEO Min Max

B (IN)

R1 R2 E (GND)

mA

fT MHz Min

Case 419B01 SOT363 Dual Combination NPN and PNPMBT3946DW1T146 40 100 300 10 250

Case 46301 SOT416/SC90 NPN2SC4617B9 50 120 560 1.0 180

Case 46301 SOT416/SC90 PNP2SA1774F9 50 120 560 1.0 140

Table 13. PlasticEncapsulated Surface Mount Bias Resistor Transistors Table 13. for General Purpose Applications Pinout: 1Base, 2Emitter, 3Collector These devices include bias resistors on the semiconductor chip with the transistor. See the BRT diagram for orientation of resistors.Device NPN PNP NPN Marking PNP V(BR)CEO Volts (Min) hFE@ IC Min mA IC mA Max R1 Ohm R2 Ohm

Case 318D04 SC59MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T18A 8B 8C 8D 8E 8F 8G 8H 8J 8K 8L 6A 6B 6C 6D 6E 6F 6G 6H 6J 6K 6L 50 50 50 50 50 50 50 50 50 50 50 35 60 80 80 160 160 3.0 8.0 15 80 80 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 100 100 100 100 100 100 100 100 100 100 100 10K 22K 47K 10K 10K 4.7K 1.0K 2.2K 4.7K 4.7K 22K 10K 22K 47K 47K 1.0K 2.2K 4.7K 47K 47K

Case 31808 TO236AB (SOT23)MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1A8A A8B A8C A8D A8E A8F A8G A8H A8J A8K A8L A6A A6B A6C A6D A6E A6F A6G A6H A6J A6K A6L 50 50 50 50 50 50 50 50 50 50 50 35 60 80 80 160 160 3.0 8.0 15 80 80 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 100 100 100 100 100 100 100 100 100 100 100 10K 22K 47K 10K 10K 4.7K 1.0K 2.2K 4.7K 4.7K 22K 10K 22K 47K 47K 1.0K 2.2K 4.7K 47K 47K


Selector Guide 112


PlasticEncapsulated Surface Mount Transistors (continued)Table 13. PlasticEncapsulated Surface Mount Bias Resistor Transistors for General Purpose Applications (continued) Pinout: 1Base, 2Emitter, 3CollectorDevice NPN PNP NPN Marking PNP V(BR)CEO Volts (Min) hFE@ IC Min mA IC mA Max R1 Ohm R2 Ohm

Case 41902 SC70/SOT323MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T18A 8B 8C 8D 8E 8F 8G 8H 8J 8K 8L 6A 6B 6C 6D 6E 6F 6G 6H 6J 6K 6L 50 50 50 50 50 50 50 50 50 50 50 35 60 80 80 160 160 3.0 8.0 15 80 80 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 50 50 50 50 50 50 50 50 50 50 50 10K 22K 47K 10K 10K 4.7K 1.0K 2.2K 4.7K 4.7K 22K 10K 22K 47K 47K 1.0K 2.2K 4.7K 47K 47K

Case 419B01 SOT363 DualsMUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 7A 7B 7C 7D 7E 7F 7G 7H 7J 7K 7L 7M 8A 8B 8C 8D 8E 8F 8G 8H 8J 8K 8L 8M 50 50 50 50 50 50 50 50 50 50 50 50 35 60 80 80 160 160 3.0 8.0 15 80 80 80 hFE @ IC Device Marking V(BR)CEO Min mA 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 100 100 100 100 100 100 100 100 100 100 100 100 IC mA Max 10K 22K 47K 10K 10K 4.7K 1.0K 2.2K 4.7K 4.7K 22K 2.2K 10K 22K 47K 47K 1.0K 2.2K 4.7K 47K 47K 47K

R1 Ohm

R2 Ohm

Case 419B01 SOT363 Dual Combination NPN and PNPMUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1Device NPN PNP NPN 11 12 13 14 15 16 3X 31 32 33 34 35 50 50 50 50 50 50 50 50 50 50 50 50 Marking PNP 35 60 80 80 160 160 3.0 8.0 15 80 80 80 V(BR)CEO Volts (Min) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 hFE@ IC Min mA 100 100 100 100 100 100 100 100 100 100 100 100 IC mA Max 10K 22K 47K 10K 10K 4.7K 1.0K 2.2K 4.7K 4.7K 22K 2.2K 10K 22K 47K 47K 1.0K 2.2K 4.7K 47K 47K 47K

R1 Ohm

R2 Ohm

Case 46301 SOT416/SC90DTC114TE DTC114YE DTA114YE DTA143EE 94 69 59 43 50 50 50 100 80 15 1.0 5.0 5.0 100 100 100 10K 10K 4.7K 47K 4.7K



Selector Guide 113

PlasticEncapsulated Surface Mount Transistors (continued)Table 14. PlasticEncapsulated Surface Mount Switching Transistors The following tables are a listing of devices intended for highspeed, low saturation voltage, switching applications. These devices have very fast switching times and low output capacitance for optimized switching performance. Pinout: 1Base, 2Emitter, 3CollectorSwitching Time (ns) Device Marking ton toff V(BR)CEO Min hFE@ IC Max mA fT MHz Min

Case 31808 TO236AB (SOT23) NPNMMBT2369LT1 MMBT2369ALT1 BSV52LT1M1J 1JA B2 12 12 12 18 18 18 15 15 12 20 20 40 120 100 100 10 400

Case 31808 TO236AB (SOT23) PNPMMBT3640LT12J 25 35 12 20 50 500

Table 15. PlasticEncapsulated Surface Mount VHF/UHF Amplifiers, Mixers, Oscillators The following table is a listing of devices intended for smallsignal RF amplifier applications to VHF/UHF frequencies. These devices may also be used as VHF/UHF oscillators and mixers. Pinout: 1Base, 2Emitter, 3CollectorDevice Marking V(BR)CEO ( ) Ccb(13) pF Max f T @ IC GHz Min mA

Case 31808 TO236AB (SOT23) NPNMMBTH10LT1 MMBT918LT1 MMBTH24LT13EM M3B M3A 25 15 30 0.7 1.7(14) 0.45 0.65 0.6 0.4 4.0 4.0 8.0

Case 31808 TO236AB (SOT23) PNPMMBTH81LT1 MMBTH69LT13D M3J 20 15 0.85 0.35(13) 0.6 2.0 5.0 10

Pinout: 1Emitter, 2Base, 3Collector Case 318D04 SC59 NPNMSC2295BT1 MSC2295CT1 MSC3130T1VB VC 1S 20 20 10 1.5(13) 1.5(13) 2.0(13) 0.15 0.15 1.4 1.0 1.0 5.0

Case 318D04 SC59 PNPMSA1022CT1(13) C re (14) C ob

EC

20

0.15

1.0


Selector Guide 114


PlasticEncapsulated Surface Mount Transistors (continued)Table 16. PlasticEncapsulated Surface Mount Choppers The following table is a listing of smallsignal devices intended for chopper applications where a higher than normal V(BR)CEO is required in the circuit application. Pinout: 1Base, 2Emitter, 3CollectorhFE @ IC Device Marking V(BR)CEO V(BR)EBO Min Max mA

Case 31808 TO236AB (SOT23) PNPMMBT404ALT12N 35 25 30 400 12

Table 17. PlasticEncapsulated Surface Mount Darlingtons The following table is a listing of smallsignal devices that have very high hFE and input impedance characteristics. These devices utilize monolithic, cascade transistor construction. Pinout: 1Base, 2Emitter, 3Collector Devices are listed in order of descending hFE.VCE(sat) Volts Max hFE @ IC Min Max mA

Device

Marking

V(BR)CES

Case 31808 TO236AB (SOT23) NPNMMBTA14LT1 MMBTA13LT11N 1M 30 30 1.5 1.5 20K 10K 100 100

Case 31808 TO236AB (SOT23) PNPMMBTA64LT12V 30 1.5 20K 100

Table 18. PlasticEncapsulated Surface Mount LowNoise Transistors The following table is a listing of smallsignal devices intended for low noise applications in the audio range. These devices exhibit good linearity and are candidates for hifi and instrumentation equipment. Pinout: 1Base, 2Emitter, 3Collector Devices are listed in order of ascending NF.NF dB Typ hFE@ IC V(BR)CEO Min Max mA fT MHz Min

Device

Marking

Case 31808 TO236AB (SOT23) NPNMMBT5089LT1 MMBT2484LT1 MMBT6428LT1 MMBT6429LT11R 1U 1KM 1L 2.0(15) 3.0(15) 3.0 3.0 25 60 50 45 400 250 500 800 10 10 10 10 50 100 100

Case 31808 TO236AB (SOT23) PNPMMBT5087LT1(15) Max

2Q

2.0(15)

50

250

10

40



Selector Guide 115

PlasticEncapsulated Surface Mount Transistors (continued)Table 19. PlasticEncapsulated Surface Mount HighVoltage Transistors The following table is a listing of smallsignal highvoltage devices designed for direct line operation requiring high voltage breakdown and relatively low current capability. Pinout: 1Base, 2Emitter, 3Collector Devices are listed in order of descending breakdown voltage.hFE@ IC Device Marking V(BR)CEO Min Max mA fT MHz Min

Case 31808 TO236AB (SOT23) NPNMMBT6517LT1 MMBTA42LT1 MMBT5551LT11Z 1D G1 350 300 160 15 40 30 100 30 50 40 50 100

Case 31808 TO236AB (SOT23) PNPMMBT6520LT1 MMBTA92LT1 MMBT5401LT12Z 2D 2L 350 300 150 15 25 50 100 30 50 40 50 100

Table 20. PlasticEncapsulated Surface Mount Drivers The following is a listing of smallsignal devices intended for medium voltage driver applications at fairly high current levels. Pinout: 1Base, 2Emitter, 3CollectorhFE@ IC Device Marking V(BR)CEO VCE(sat) VBE(sat) Min Max mA

Case 31808 TO236AB (SOT23) NPNMMBTA06LT1 BSS64LT11GM AM 80 80 0.25 0.15 100 20 100 10

Case 31808 TO236AB (SOT23) PNPBSS63LT1 MMBTA56LT1 T1 2GM 100 80 0.25 0.25 0.90 30 100 25 100

The following devices are designed to conserve energy. They offer ultralow collector saturation voltage. Case 31808 TO236AB (SOT23) PNPMMBT1010LT1GLP 15 0.1 1.1 300 600 100

Case 31803 SC59 PNPMSD1010T1GLP 15 0.1 1.1 300 600 100

Table 21. PlasticEncapsulated Surface Mount General Purpose Amplifiers Pinout: 1Base, 2Collector, 3Emitter, 4CollectorhFE@ IC Device Marking V(BR)CEO Min Max mA

Case 318E04 SOT223 NPNBCP56T1BH 80 40 250 150

Case 318E04 SOT223 PNP Pinout: 1Gate, 2Drain, 3Source, 4DrainBCP53T1AH 80 40 25 150


Selector Guide 116


PlasticEncapsulated Surface Mount Transistors (continued)Table 22. PlasticEncapsulated Surface Mount Switching Transistors Pinout: 1Base, 2Collector, 3Emitter, 4CollectorhFE Device Marking ton toff V(BR)CEO Min Max @ IC (mA) fT Min (MHz)

Case 318E04 SOT223 NPNPZT2222AT1P1F 35 285 40 100 300 20 300

Case 318E04 SOT223 PNPPZT2907AT1P2F 45 100 60 100 300 50 200

Table 23. PlasticEncapsulated Surface Mount Darlingtons Pinout: 1Base, 2Collector, 3Emitter, 4CollectorVCE(sat) Max (V) hFE Min Max @ IC (mA)

Device

Marking

V(BR)CER

Case 318E04 SOT223 NPNBSP52T1 PZTA14T1AS3 P1N 80 30 1.3 1.5 2000 20k 500 100

Case 318E04 SOT223 PNPBSP62T1 PZTA64T1BS3 P2V 90 30 1.3 1.5 2000 20k 500 100

Table 24. PlasticEncapsulated Surface Mount HighVoltage Transistors Pinout: 1Base, 2Collector, 3Emitter, 4CollectorhFE Device Marking V(BR)CEO Min Max @ IC (mA) fT Min (MHz)

Case 318E04 SOT223 NPNBSP19AT1 PZTA42T1 BF720T1SP19A P1D BF720 350 300 250 40 40 50 20 10 10 70 50 60

Case 318E04 SOT223 PNPPZTA96T1 PZTA92T1 BSP16T1 BF721T1ZTA96 P2D BSP16 BF721 450 300 300 250 50 40 30 50 150 150 10 10 10 10 50 50 15 60

Table 25. PlasticEncapsulated Surface Mount High Current Transistors Pinout: 1Base, 2Collector, 3Emitter, 4CollectorDevice Marking V(BR)CEO VCE(sat) Volts hFE@ IC Min Max mA

Case 318E04 SOT223 NPNPZT651T1 BCP68T1651 CA 60 20 0.5 0.5 75 60 1000 1000

Case 318E04 SOT223 PNPPZT751T1 BCP69T1ZT751 CE 60 20 0.5 0.5 75 60 1000 1000



Selector Guide 117

FieldEffect TransistorsJFETsJFETs operate in the depletion mode. They are available in both P and Nchannel and are offered in both Throughhole and Surface Mount packages. Applications include general purpose amplifiers, switches and choppers, and RF amplifiers and mixers. These devices are economical and very rugged. The drain and source are interchangeable on many typical FETs.1 CASE 2904 TO226AA (TO92)

23

Table 26. JFET LowFrequency/LowNoise The following table is a listing of smallsignal JFETs intended for lownoise applications in the audio range. These devices exhibit good linearity and are candidates for hifi and instrumentation equipment.Re Yfs Device mmho Min @f Re Yos @ f mho Max kHz V(BR)GSS V(BR)GDO Volts Min VGS(off) Volts Min Max Min IDSS mA Max Style

kHz

Ciss pF Max

Crss pF Max

Case 2904 TO226AA (TO92) NChannelJ202 2N5457 2N5458 1.0 1.5 1.0 1.0 50 50 1.0 1.0 7.0 7.0 3.0 3.0 40 25 25 0.8 0.5 1.0 4.0 6.0 7.0 0.9 1.0 2.0 4.5 5.0 9.0 5 5 5

Case 2904 TO226AA (TO92) PChannel2N5460 2N5461 2N54621.0 1.5 2.0 1.0 1.0 1.0 75 75 75 1.0 1.0 1.0 7.0 7.0 7.0 2.0 2.0 2.0 40 40 40 0.75 1.0 1.8 6.0 7.5 9.0 1.0 2.0 4.0 5.0 9.0 16 7 7 7

Table 27. JFET HighFrequency Amplifiers The following is a listing of smallsignal JFETs that are intended for hifrequency applications. These are candidates for VHF/UHF oscillators, mixers and frontend amplifiers.Re Yfs @ f Device mmho Min MHz Re Yos @ f mho Max MHz NF @ RG = 1K dB Max f MHz V(BR)GSS V(BR)GDO Volts Min VGS(off) Volts Min Max IDSS mA Min Max Style

Ciss pF Max

Crss pF Max

Case 2904 TO226AA (TO92) NChannelMPF102 2N5484 2N5485 2N5486 J308 J309 J310(1) Typical

1.6 2.5 3.0 3.5 12(1) 12(1) 12(1)

100 100 400 400 100 100 100

200 75 100 100 250(1) 250(1) 250(1)

100 100 400 400 100 100 100

7.0 5.0 5.0 5.0 7.5 7.5 7.5

3.0 1.0 1.0 1.0 2.5 2.5 2.5

3.0 4.0 4.0 1.5(1) 1.5(1) 1.5(1)

100 400 400 100 100 100

25 25 25 25 25 25 25

0.3 0.5 2.0 1.0 1.0 2.0

8.0 3.0 4.0 6.0 6.5 4.0 6.5

2.0 1.0 4.0 8.0 12 12 24

20 5.0 10 20 60 30 60

5 5 5 5 5 5 5


Selector Guide 118


JFETs (continued)Table 28. JFET Switches and Choppers The following is a listing of JFETs intended for switching and chopper applications.RDS(on) @ ID Device Max mA VGS(off) Volts Min Max Min IDSS mA Max V(BR)GSS V(BR)GDO Volts Min

Ciss pF Max

Crss pF Max

ton ns Max

toff ns Max

Style

Case 2904 TO226AA (TO92) NChannelJ112 MPF4392 2N5639 MPF4393 2N5640 2N5555 J110(1) Typical (16) V GS(f)

50 60 60 100 100 150 18

1.0 1.0

1.0 0.5

5.0 (8.0)(1) (12)(1) (6.0)(1) 1.0(16) 4.0

5.0 25 25 5.0 5.0 15 10

75 30

35 30 30 30 30 25 25

28 10 10 10 10 5.0

5.0 3.5 4.0 3.5 4.0 1.2

15 15 18 10

35 55 45 25

5 5 5 5 5 5 5



Selector Guide 119

TMOS FETs1 2 3

CASE 2905 TO226AE 1WATT (TO92) D CASE 2904 TO226AA (TO92)

1

2 3

G S

Table 29. TMOS Switches and Choppers The following is a listing of smallsignal TMOS devices that are intended for switching and chopper applications. These devices offer low RDS(on) characteristics.RDS(on) @ ID Device Max A VGS(th) Volts Min Max

V(BR)DSS Volts Min

Ciss pF Max

Crss pF Max

ton ns Max

toff ns Max

Style

Case 2905 TO226AE (1WATT TO92) NChannelMPF930 MPF960 MPF6659 MPF990 MPF6660 MPF6661 MPF910 VN10LM1.4 1.7 1.8 2.0 3.0 4.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 0.5 0.5 1.0 1.0 0.8 1.0 0.8 0.8 0.3 0.8 3.5 3.5 2.0 3.5 2.0 2.0 2.5 2.5 35 60 35 90 60 90 60 60 70(1) 70(1) 30(1) 70(1) 30(1) 30(1) 60 20(1) 20(1) 4(1) 20(1) 4(1) 4(1) 5.0 15 15 5.0 15 5.0 5.0 10 15 15 5.0 15 5.0 5.0 10 22 22 22 22 22 22 22 22

Case 2904 TO226AA (TO92) NChannelVN0300L 2N7000 BS170 VN0610LL VN2406L BS107A 2N7008 VN2222LL VN2410L BS107(1) Typical

1.2 5.0 5.0 5.0 6.0 6.4 7.5 7.5 10 14

1.0 0.5 0.2 0.5 0.5 0.25 0.5 0.5 0.5 0.2

0.8 0.8 0.8 0.8 0.8 1.0 1.0 0.6 0.8 1.0

2.5 3.0 3.0 2.5 2.0 3.0 2.5 2.5 2.0 3.0

60 60 60 60 240 200 60 60 240 200

100 60 25(1) 60 125 60(1) 50 60 125 60(1)

25 5.0 3.0(1) 5.0 20 6.0(1) 5.0 5.0 20 6.0(1)

30 10 10 10 8.0 15 20 10 8.0 15

30 10 10 10 23 15 20 10 23 15

22 22 30 22 22 30 22 22 22 30


Selector Guide 120


Surface Mount FETsThis section contains the FET plastic packages available for surface mount applications. Most of these devices are the most popular metalcan and insertion type parts carried over to the new surface mount packages.1 2

3

CASE 31808 TO236AB SOT23 6 5

CASE 41902 SC70/SOT323 4

4

1

3 CASE 419B01 SOT363

2

1 CASE 318E04 SOT223 2 3

Table 30. Surface Mount RF JFETs The following is a list of surface mount FETs which are intended for VHF/UHF RF amplifier applications. Pinout: 1Drain, 2Source, 3GateNF Device Marking dB Typ f MHz mmhos Min Yfs @ VDS mmhos Max Volts V(BR)GSS Style

Case 31808 TO236AB (SOT23) NChannelMMBFJ309LT1 MMBFJ310LT1 MMBFU310LT1 MMBF4416LT1 MMBF5484LT16U 6T M6C M6A M6B 1.5 1.5 1.5 2(3) 2.0 450 450 450 100 100 10 8.0 10 4.5 3.0 20 18 18 7.5 6.0 10 10 10 15 15 25 25 25 30 25 10 10 10 10 10

Case 419B01 SOT363 Dual NChannelMBF4416DW1T1(3) Max

M6

2.0

100

4.5

7.5

15

30

7

Table 31. Surface Mount GeneralPurpose JFETs The following table is a listing of surface mount smallsignal general purpose FETs. These devices are intended for smallsignal amplification for DC, audio, and lower RF frequencies. They also have applications as oscillators and generalpurpose, lowvoltage switches. Pinout: 1Drain, 2Source, 3GateYfs @ VDS Device Marking V(BR)GSS mmhos Min mmhos Max Volts mA Min IDSS mA Max Style

Case 31808 TO236AB (SOT23) NChannelMMBF5457LT16D 25 1.0 5.0 15 1.0 5.0 10

Case 31808 TO236AB (SOT23) PChannelMMBF5460LT1M6E 40 1.0 4.0 15 1.0 5.0 10

Case 419B01 SOT363 Dual NChannelMBF5457DW1T1(3) Max

6D

25

1.0

5.0

15

1.0

5.0

7



Selector Guide 121

Surface Mount FETs (continued)Table 32. Surface Mount Choppers/Switches JFETs The following is a listing of smallsignal surface mount JFET devices intended for switching and chopper applications. Pinout: 1Drain, 2Source, 3GateRDS(on) Ohms Max toff ns Max VGS(off) V(BR)GSS 30 30 30 Volts Min Volts Max mA Min IDSS mA Max Style

Device

Marking

Case 31808 TO236AB (SOT23) NChannelMMBF4391LT1 MMBF4392LT1 MMBF4393LT16J 6K 6G 30 60 100 20 35 50 4.0 2.0 0.5 10 5.0 3.0 50 25 5.0 150 75 30 10 10 10

Case 31808 TO236AB (SOT23) PChannelMMBFJ175LT1 MMBFJ177LT16W 6Y 125 300 30 30 3.0 0.8 6.0 2.5 7.0 1.5 60 20 10 10

Table 33. TMOS FETs The following is a listing of smallsignal surface mount TMOS FETs which exhibit low RDS(on) characteristics. Pinout: 1Gate, 2Source, 3DrainRDS(on) @ ID Device Marking Ohm mA VDSS 60 100 50 60 20 20 30 VGS(th) Volts Min Volts Max Switching Time ton ns 10 20 20 20 2.5 2.5 2.5 toff ns 10 40 20 20 15 16 16 Style

Case 31808 TO236AB (SOT23) NChannelMMBF170LT1 BSS123LT1 BSS138LT1 2N7002LT1 MMBF0201NLT1 MGSF1N02LT1 MGSF1N03LT1 6Z SA J1 702 N1 N2 N3 5.0 6.0 3.5 7.5 1.0 0.085 0.09 200 100 200 500 300 1200 1200 0.8 0.8 0.5 1.0 1.0 1.0 1.0 3.0 2.8 1.5 2.5 2.4 2.4 2.4 21 21 21 21 21 21 21

Case 31808 TO236 (SOT23) PChannelBSS84LT1 MMBF0202PLT1 MGSF1P02LT1 MGSF1P02ELT1PD P3 PC PE 6.0 1.4 0.35 0.16 100 200 1500 1500 50 20 20 20 1.0 1.0 1.0 0.7 2.4 2.0 2.4 1.2 2.5 2.5 2.5 2.5 16 16 16 15 21 21 21 21

Pinout: 1Gate, 2Drain, 3Source, 4DrainRDS(on) Device Marking Ohm mA VDSS 60 90 240 200 VGS(th) Volts Min Volts Max Switching Time ton ns 15 5.0 15 toff ns 15 5.0 15 Style

Case 318E04 SOT223 NChannelMMFT960T1 MMFT6661T1 MMFT2406T1 MMFT107T1FT960 T6661 T2406 FT107 1.7 4.0 10 14 1000 1000 200 200 1.0 0.8 0.8 1.0 3.5 2.0 2.0 3.0 3 3 3 3

Case 41902 SC70/SOT323 NChannelMMBF2201NT1N1 1.0 300 20 1.0 2.4 2.5 15 8

Case 41902 SC70/SOT323 PChannelMMBF2202PT1P3 2.2 200 20 1.0 2.4 2.5 16 8


Selector Guide 122


Tuning and Switching DiodesTuning Diodes Abrupt JunctionMotorola supplies voltagevariable capacitance diodes serving the entire range of frequencies from HF through UHF. Used in RF receivers and transmitters, they have a variety of applications, including: Phaselocked loop tuning systems Local oscillator tuning Tuned RF preselectors RF filters RF phase shifters RF amplifiers Automatic frequency control Video filters and delay lines Harmonic generators FM modulators Two families of devices are available: Abrupt Junction and Hyper Abrupt Junction. The Abrupt Junction family includes devices suitable for virtually all tunedcircuit and narrowrange tuning applications throughout the spectrum.CASE 2904 TO226AA (TO92) 1 23 2 CASE 5102 DO204AA (DO7) 1 STYLE 1 1 2 STYLE 15 2 3

1

CASE 18202 TO226AC (TO92) 1 23

2 Cathode STYLE 1

1 Anode

1 2


3 Cathode STYLE 8

1 Anode

3 1 1 CASE 46301 SOT416/SC90 2 3 2 STYLE 9

Typical CharacteristicsDiode Capacitance versus Reverse Voltage100 70 C T , DIODE CAPACITANCE (pF) 50 30 20 10 7 5 3 2 0.6 1 2 4 6 10 20 VR, REVERSE VOLTAGE (VOLTS) 40 60 1 0.1 TA = 25C f = 1 MHz C T , DIODE CAPACITANCE (pF) 1N5148 1000

MV1638 100

1N5456A MV1650

(See Tables 34 Thru 36) 10 MV1628

1 10 VR, REVERSE VOLTAGE (VOLTS)

100

1000 C T , DIODE CAPACITANCE (pF) MV2115 C T , DIODE CAPACITANCE (pF) MV2109 MMBV2109LT1 100

100 70

40

MMBV432LT1 MV104

10 MV2101 MMBV2101LT1 1 0.1 MV2105 MMBV2105LT1 100

20

TA = 25C f = 1 MHz EACH DIODE 0.5 1 2 3 5 10 VR, REVERSE VOLTAGE (VOLTS) 20 30

1 10 VR, REVERSE VOLTAGE (VOLTS)

10 0.3

(See Tables 37 and 38)

(See Table 39)


Selector Guide 123

Tuning Diodes Abrupt Junction (continued)Table 34. GeneralPurpose Glass Abrupt Tuning Diodes High Q Capacitance Ratio @ 4.0 Volts/60 Volts The following is a listing of axial leaded, generalpurpose, abrupt tuning diodes. These devices exhibit high Q characteristics.CT @ VR = 4.0 V, 1.0 MHz Device(19) pF Min pF Nominal pF Max V(BR)R Volts Cap Ratio C4/C60 Min Q 4.0 V, 50 MHz Min

Case 5102 DO204AA (DO7)1N5148 42.3 47 51.7 60 3.2 200

Table 35. GeneralPurpose Glass Abrupt Tuning Diodes High Q Capacitance Ratio @ 2.0 Volts/30 Volts The following is a listing of axial leaded, generalpurpose, abrupt tuning diodes. These devices exhibit very high Q characteristics.CT @ VR = 4.0 V, 1.0 MHz Device(20) pF Min pF Nominal pF Max VR(BR)R Volts Cap Ratio C2/C30 Min Q 4.0 V, 50 MHz Min

Case 5102 DO204AA (DO7)1N5446ARL 1N5448ARL 1N5456A(19)Suffix A = 10.0% (20)Suffix B = 5.0%

16.2 19.8 90

18 22 100

19.8 24.2 110

30 30 30

2.6 2.6 2.7

350 350 175

Table 36. GeneralPurpose Glass Abrupt Tuning Diodes Capacitance Ratio @ 2.0 Volts/20 Volts The following is a listing of axial leaded, generalpurpose, abrupt tuning diodes. These devices exhibit high Q characteristics.CT @ VR = 4.0 V, 1.0 MHz Device pF Min pF Nominal pF Max V(BR)R Volts Cap Ratio C2/C20 Min Q 4.0 V, 50 MHz Typ

Case 5102 DO204AA (DO7)MV1626 MV1628 MV1630 MV1634 MV1638 MV1648 MV1650 10.8 13.5 16.2 19.8 29.7 73.8 90 12 15 18 22 33 82 100 13.2 16.5 19.8 24.2 36.3 90.2 110 20 20 20 20 20 20 20 2.0 2.0 2.0 2.0 2.0 2.0 2.0 300 250 250 250 200 150 150

Table 37. GeneralPurpose Plastic Abrupt Tuning Diodes Capacitance Ratio @ 2.0 Volts/30 Volts The following is a listing of plastic package, generalpurpose, abrupt tuning diodes. These devices exhibit high Q characteristics.CT @ VR = 4.0 V, 1.0 MHz Device pF Min pF Nominal pF Max VR(BR)R Volts Cap Ratio C4/C30 Min Q 4.0 V, 50 MHz Typ

Case 18202 TO226AC (TO92) 2LeadMV2101 MV2104 MV2105 MV2108 MV2109 MV2111 MV21156.1 10.8 13.5 24.3 29.7 42.3 90 6.8 12 15 27 33 47 100 7.5 13.2 16.5 29.7 36.3 51.7 110 30 30 30 30 30 30 30 2.5 2.5 2.5 2.5 2.5 2.5 2.6 400 350 350 250 200 150 100

Selector Guide 124


Tuning Diodes Abrupt Junction (continued)Table 38. Surface Mount Abrupt Tuning Diodes Capacitance Ratio @ 2.0 Volts/30 Volts The following is a listing of surface mount abrupt junction tuning diodes intended for generalpurpose variable capacitance circuit applications.CT @ VR = 4.0 V, 1.0 MHz pF Device Min pF Nominal pF Max VR(BR)R Volts Cap Ratio C2/C30 Min Q 4.0 V, 50 MHz Typ

Case 31808 DO236AB (SOT23)MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT16.1 9.0 13.5 19.8 24.3 29.7 6.8 10 15 22 27 33 7.5 11 16.5 24.2 29.7 36.3 30 30 30 30 30 30 2.5 2.5 2.5 2.5 2.5 2.5 400 350 350 300 250 200

Table 39. Abrupt Tuning Diodes for FM Radio Dual The following is a listing of abrupt tuning diodes that are available as dual units in a single package.CT @ VR(22) Device pF Min pF Max Volts Cap Ratio C3/C30 Min Q 3.0 V, 50 MHz Min

V(BR)R Volts

Device Marking

Style

Case 2904 TO226AA (TO92)MV10437 42 3.0 2.5 100 32 15

Case 31808 TO236AB (SOT23)MMBV432LT1(21)C2/C8 (22)Each Diode

43

48.1

2.0

1.5(21)

100

14

M4B

9


Selector Guide 125

Tuning Diodes HyperAbrupt JunctionThe HyperAbrupt family exhibits higher capacitance, and a much larger capacitance ratio. It is particularly well suited for widerrange applications such as AM/FM radio and TV tuning.1

2 CASE 5102 DO204AA (DO7) 1 Cathode STYLE 1 2 Anode

1 2

CASE 18202 TO226AC (TO92)

2 Anode STYLE 1

1 Cathode

3 1 2


3 Cathode STYLE 8

1 Anode

4 1 2 3 CASE 318E04 SOT223 1 STYLE 2 2, 4

Typical CharacteristicsDiode Capacitance versus Reverse Voltage20 18 C T , DIODE CAPACITANCE (pF) 16 14 12 10 8 6 4 2 0 TA = 25C f = 1 MHz MMBV105GLT1 C T , CAPACITANCE (pF) 40 36 32 28 24 20 16 12 8 4 0.3 0.5 1 2 3 5 10 20 30 0 1 3 10 30 100 MMBV109LT1 MV209

VR, REVERSE VOLTAGE (VOLTS)


Figure 1. Diode Capacitance


Selector Guide 126


Tuning Diodes HyperAbrupt Junction (continued)40 C T , DIODE CAPACITANCE (pF) 32 24 16 8 0 1 3 10 20 VR, REVERSE VOLTAGE (VOLTS) MMBV409LT1 MV409 C T , DIODE CAPACITANCE (pF) 10 9 8 7 6 5 4 3 2 1 0 MMBV809LT1

0.5 1

2

3 4 5 8 10 15 VR, REVERSE VOLTAGE (VOLTS)



40 C T , DIODE CAPACITANCE (pF) C T , DIODE CAPACITANCE (pF) 36 32 28 24 20 16 12 8 4 0 0.3 TA = 25C f = 1 MHz MMBV3102LT1

50 40 f = 1 MHz 30 20 10 MMBV609LT1

0.5

1

2

3

5

10

20

30

0

1

2

3

5

7

10

20

30

40




Figure 6. Diode Capacitance Each Die

MV7005T11000 C T , DIODE CAPACITANCE (pF) 500 C T , CAPACITANCE (pF) 500 300 200 100 50 30 20 10 1 MV1405 MV1403 MV1404 2 MV7404T1 3 4 5 6 7 8 9 10 TA = 25C f = 1 MHz

100 50

10

1

3

5

7

9



Figure 7. Capacitance versus Reverse Voltage

Figure 8. Diode Capacitance versus Reverse Voltage


Selector Guide 127

Tuning Diodes HyperAbrupt Junction (continued)Table 40. HyperAbrupt Tuning Diodes for Telecommunications Single The following is a listing of hyperabrupt tuning diodes intended for high frequency, FM radio, and TV tuner applications.CT @ VR (f = 1.0 MHz) Device pF Min pF Max Volts Cap Ratio @ VR Min Max Volts 3.0 V Min Q 50 MHz Max V(BR)R Volts Device Marking Case Style CV Curve Fig

Case 18202 TO226AC (TO92)MV209 MV40926 26 32 32 3.0 3.0 5.0 1.5 6.5 2.0 3/25 3/8 200 200 30 20 1 1 2 3

Case 31808 TO236AB (SOT23)MMBV105GLT1 MMBV109LT1 MMBV409LT1 MMBV809LT1 MMBV3102LT11.5 26 26 4.5 20 2.8 32 32 6.1 25 25 3.0 3.0 2.0 3.0 4.0 5.0 1.5 1.8 4.5 6.5 6.5 1.9 2.6 3/25 3/25 3/8 2/8 3/25 200 200 200 300 200 30 30 20 20 30 M4E M4A X5 5K M4C 8 8 8 8 8 1 2 3 4 5

Case 41902 SC70/SOT323MBV109T126 32 3.0 5.0 6.5 3/25 200 30 M4A 8

Table 41. HyperAbrupt Tuning Diodes for Communications DualCT @ VR (f = 1.0 MHz) Device pF Min pF Max Volts Cap Ratio @ VR Min Max Volts 3.0 V Min Q 50 MHz Max V(BR)R Volts Device Marking Case Style CV Curve Fig

Case 31808 TO236AB (SOT23)MMBV609LT126 32 3.0 1.8 2.4 3/8 250 20 5L 9 6

Table 42. HyperAbrupt High Capacitance Voltage Variable Diode Surface Mount The following are high capacitance voltage variable diodes intended for low frequency applications and circuits requiring large tuning capacitance.CT @ f = 1.0 MHz Device V(BR)R Volts IR nA Min pF Max pF Cap Ratio Min Q Min Style CV Curve Figure

Case 318E04 SOT223 Pinout: 1Anode, 2, 4Cathode, 3NCMV7005T1 MV7404T115 12 100 100 400 96 520 144 12(26) 10(27) 150(28) 200(29) 2 2 8 11

Table 43. HyperAbrupt High Capacitance Tuning Diodes Axial Lead Glass PackageCT @ VR Device pF Min pF Max Volts Cap Ratio C2/C10 Min Q 2.0 V, 1.0 MHz Min V(BR)R Volts CV Curve Figure

Style

Case 5102 DO204AA (DO7)MV1404 MV1403 MV1405(26) V = 1.0 V/V = 9.0 V R R (27) V = 2.0 V/V = 10 V R R (28) V = 1.0 V, f = 1.0 MHz R (29) V = 2.0 V, f = 1.0 MHz R

96 140 200

144 210 300

2.0 2.0 2.0

10 10 10

200 200 200

12 12 12

1 1 1

11 11 11


Selector Guide 128


Schottky DiodesSchottky diodes are ideal for VHF and UHF mixer and detector applications as well as many higher frequency applications. They provide stable electrical characteristics by eliminating the pointcontact diode presently used in many applications.1 2

CASE 18202 TO226AC (TO92) STYLE 1 2 Cathode 1 Anode 1 Cathode

CASE 42504 SOD123 STYLE 1 2 Anode

CASE 41902 SC70/SOT323 1 Single3 1 2

6

5

4

CASE 419B01, STYLE 6 SOT363

3

1

2

3

CASE 31808 TO236AB SOT23 STYLE 9 STYLE 11 21 Series 2 3

STYLE 8 1 Single 3 1

3 Common Cathode STYLE 12 Anode 3 Cathode 1 2 Cathode 1

STYLE 19 2 Series 3

Typical CharacteristicsCapacitance versus Reverse Voltage1 MBD101 MMBD101LT1 MMBD352LT1* MMBD353LT1* MMBD354LT1* TA = 25C C T , CAPACITANCE (pF) 2.8 2.4 2 1.6 1.2 0.8 0.4 0.6 0 0 1 2 3 * EACH DIODE 4 0 5 10 15 20 25 30 35 40 45 50 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) MBD701, MMBD701LT1 MBD301, MMBD301LT1 TA = 25C

C T , CAPACITANCE (pF)

0.9

0.8

0.7

(See Table 44)



Selector Guide 129

Schottky Diodes (continued)Table 44. Schottky Diodes The following is a listing of Schottky diodes that exhibit low forward voltage drop for improved circuit efficiency.V(BR)R Volts CT @ VR pF Max VF @ 10 mA Volts Max IR @ VR nA Max Minority Lifetime pS (TYP) Device Marking

Device

Style

Case 18202 TO226AC (TO92)MBD701 MBD301 MBD101 BAS40LT1 BAS4004LT1 BAS70LT1 BAT54ALT1 BAT54LT1 BAT54SLT1 MMBD701LT1 MMBD301LT1 MMBD101LT1 BAS4006LT1 BAS7004LT1(23) MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 MMBD452LT170 30 7.0 40 40 70 30 30 30 70 30 7.0 40 70 7.0 7.0 7.0 7.0 30 30 70 30 4 30 30 70 30 7.0 20 1.0 @ 20 V 1.5 @ 15 V 1.0 @ 0 V 5.0 @ 1.0 V 5.0 @ 1.0 V 2.0 @ 0 V 10 @ 1.0 V 10 @ 1.0 V 10 @ 1.0 V 1.0 @ 20 V 1.5 @ 15 V 1.0 @ 0 V 5.0 @ 1.0 V 2.0 @ 0 V 1.0 @ 0 V 1.0 @ 0 V 1.0 @ 0 V 1.0 @ 0 V 1.5 @ 1.5 V 10 @ 1.0 V 1.0 @ 20 V 1.5 @ 15 V 1.0 @ 0 V 10 @ 1.0 V 1.5 @ 15 V 1.0 @ 20 V 10 @ 1.0 V 1.0 @ 0 V 2.5 @ 1.0 V 1.0 0.6 0.6 0.5 @ 30 mA 0.5 @ 30 mA 0.75 0.4 0.4 0.4 1.0 0.6 0.6 0.5 @ 30 mA 0.75 0.6 0.6 0.6 0.6 0.6 0.4 1.2 0.6 0.6 0.4 0.6 1.0 0.4 0.6 0.37 @ 1 mA 200 @ 35 V 200 @ 25 V 250 @ 3.0 V 1000 @ 25 V 1000 @ 25 V 100 @ 50 V 2000 @ 25 V 2000 @ 25 V 2000 @ 25 V 200 @ 35 V 200 @ 25 V 250 @ 3.0 V 1000 @ 25 V 100 @ 50 V 250 @ 3.0 V 250 @ 3.0 V 250 @ 3.0 V 250 @ 3.0 V 200 @ 25 V 2000 @ 25 V 0.2 @ 35 V 0.2 @ 25 V 0.25 @ 3 V 2000 @ 25 V 0.2 @ 25 V 0.2 @ 35 V 2000 @ 25 V 250 @ 3.0 V 0.2 @ 10 V 15 15 15 15 15 15 15 15 15 15 15 15 15 B1 BE LV3 LD3 5H 4T 4M M5G M4F M6H MJ1 5N 5H 4T 4M 4T 5H M5 B3 1 1 1 8 12 8 12 8 11 8 8 8 11 12 11 19 9 12 11 1 1 1 1 2 2 2 9 9 2

Case 31808 TO236AB (SOT23) Single

Case 31808 TO236AB (SOT23) Dual

Case 42504 (SOD123)BAT54T1 MMSD701T1 MMSD301T1 MMSD101T1 BAT54WT1 MMBD330T1 MMBD770T1 BAT54SWT1 MMBD352WT1 MMBD717LT1(23)(23) Common Anode

Case 41902 (SC70/SOT323) Single

Case 41902 (SC70/SOT323) Dual

Case 419B01 SOT363 DualsV(BR)R Device Marking BL M4 T4 H5 Min Volts 30 7.0 30 70 @ IBR (A) 10 10 10 10 Max (A) 2.0 200 200 200 IR @ VR Volts 25 25 25 25 Min Volts VF Max Volts 0.32 0.6 0.4 0.5 @ IF (mA) 1.0 1.0 1.0 1.0 (30) CT( ) Max (pF) 1.0 1.0 1.5 1.0 trr Max (ns) 5.0 Case Style 6 6 6 6

MBD54DWT1 MBD110DWT1 MBD330DWT1 MBD770DWT1(30) V = 0 V, f = 1.0 MHz R


Selector Guide 130


Switching DiodesSmallsignal switching diodes are intended for low current switching and steering applications. HotCarrier, PIN and generalpurpose diodes allow a wide selection for specific application requirements.1 CASE 2904 TO226AA (TO92) 2 3 STYLE 3 1 2 CASE 18202 TO226AC (TO92)

Typical CharacteristicsCapacitance versus Reverse Voltage10 C T , DIODE CAPACITANCE (pF) TA = 25C f = 1 MHz

1 3 STYLE 4 1 3

2 STYLE 1 2 Cathode 2 1 Anode

2

MPN3404 11

3

0.5 0.3 0.2 0 0

MMBV3401LT1 20 V MAX VR 12 18 24 30 36

MPN3700 MMBV3700LT1 42 48 54 1

2

CASE 31808 TO236AB SOT23 STYLE 12 3 1 3 COMMON ANODE 2

STYLE 8


SINGLE

(See Table 45)STYLE 1 1 Cathode CASE 42504 SOD123 2 Anode 1 3 COMMON CATHODE STYLE 11 3 ANODE 3 2 CATHODE 3 1 3 SERIES 2 1 STYLE 9 2

STYLE 18 2 SINGLE 3

STYLE 19 2 3 SERIES

1

CASE 46301 SOT416/SC90 1 CATHODE STYLE 4 2 1 ANODE STYLE 5 2 CASE 318D04 SC59

3 2 1 STYLE 2 STYLE 4 3 SINGLE 2 STYLE 4 2 1 3 COMMON ANODE 2 1 3 COMMON CATHODE STYLE 3 2 1 3 COMMON ANODE STYLE 5 2 2 SINGLE 3

STYLE 2 1 SINGLE STYLE 5 1 3 COMMON CATHODE 3

3 CASE 41902 SC70/SOT323 1

2


Selector Guide 131

Switching Diodes (continued)Table 45. PIN Switching Diodes The following PIN diodes are designed for VHF band switching and generalpurpose low current switching applications.V(BR)R Volts Min CT @ VR @ 1.0 MHz pF Max Volts IR @ VR A Max Series Resistance Ohm Max

Device

Device Marking

Style

Case 18202 TO226AC (TO92)MPN3700 MPN3404 200 20 1.0 2.0 20 15 0.1 @ 150 0.1 @ 25 V 1.0 @ 10 mA 0.85 @ 10 mA 1 1

Case 31808 TO236AB (SOT23)MMBV3700LT1 MMBV3401LT1 200 35 1.0 1.0 20 20 0.1 @ 150 0.1 @ 25 V 1.0 @ 10 mA 0.7 @ 10 mA 4R 4D 8 8

Table 46. GeneralPurpose Signal and Switching Diodes Single The following is a listing of smallsignal switching diodes in surface mount packages. These diodes are intended for low current switching and signal steering applications.V(BR)R Device Marking Min Volts @ IBR (A) Max (A) IR @ VR Volts Min Volts VF Max Volts @ IF (mA) CT(30) Max (pF) trr Max (ns) Case Style

Case 31808 TO236AB (SOT23)BAS21LT1 MMBD914LT1 BAS16LT1 MMBD6050LT1 BAL99LT1JS 5D A6 5A JF 250 100 75 70 70 100 100 100 100 100 0.1 5.0 1.0 0.1 2.5 200 75 75 50 70 0.85 1.0 1.0 1.0 1.1 1.0 100 10 50 100 50 5.0 4.0 2.0 2.5 1.5 50 4.0 6.0 4.0 6.0 8 8 8 8 18

Case 318D04 SC59M1MA151AT1 M1MA151KT1MA MH 40 40 100 100 0.1 0.1 35 35 1.2 1.2 100 100 2.0 2.0 3.0 3.0 4 2

Case 41902 SC70/SOT323BAS16WT1 M1MA141KT1 M1MA142KT1 M1MA174T1A6 MH MI J6 75 40 80 100 1.0 100 100 100 0.02 0.1 0.1 5.0 20 35 75 75 1.25 1.2 1.2 1.0 150 100 100 10 2.0 2.0 2.0 4.0 6.0 3.0 3.0 4.0 2 2 2 2

Case 42504 SOD123MMSD914T1 MMSD71RKT15D 6S 100 100 5.0 0.5 75 80 1.0 1.2 10 100 4.0 2.0 4.0 4.0 1 1

(30) V = 0 V, f = 1.0 MHz R


Selector Guide 132


Switching Diodes (continued)Table 47. GeneralPurpose Signal and Switching Diodes Dual The following is a listing of smallsignal switching diodes in surface mount packages. These diodes are intended for low current switching and signal steering applications.V(BR)R Device Marking Min Volts @ IBR (A) Max (A) IR @ VR Volts Min Volts VF Max Volts @ IF (mA) CT(30) Max (pF) trr Max (ns) Case Style

Case 31808 TO236AB (SOT23)MMBD7000LT1 MMBD2836LT1 MMBD2838LT1 BAV70LT1 BAV99LT1 BAW56LT1 MMBD6100LT1 BAV74LT1 MMBD2835LT1 MMBD2837LT1M5C A2 A6 A4 A7 A1 5BM JA A3 A5 100 75 75 70 70 70 70 50 35 35 100 100 100 100 100 100 100 5.0 100 100 1.0 0.1 0.1 5.0 2.5 2.5 0.1 0.1 0.1 0.1 50 50 50 70 70 70 50 50 30 30 0.75 0.85 1.1 1.0 1.0 1.0 1.0 1.0 1.1 1.0 1.0 1.0 100 10 10 50 50 50 100 100 10 10 1.5 4.0 4.0 1.5 1.5 2.0 2.5 2.0 4.0 4.0 4.0 4.0 4.0 6.0 4.0 6.0 4.0 4.0 4.0 4.0 11 12 9 9 11 12 9 9 12 9

Case 318D04 SC59M1MA151WAT1 M1MA151WKT1MN MT 40 40 100 100 0.1 0.1 35 35 1.2 1.2 100 100 15 2.0 10 3.0 5 3

Case 41902 SC70/SOT323M1MA142WKT1 M1MA142WAT1 BAW56WT1 BAV70WT1 BAV99WT1 BAV99RWT1 M1MA141WKT1 M1MA141WAT1MU MO A1 A4 A7 F7 MT MN 80 80 70 70 70 70 40 40 100 100 100 100 100 100 100 100 0.1 0.1 2.5 5.0 2.5 2.5 0.1 0.1 75 75 70 70 70 70 35 35 1.2 1.2 1.0 1.0 1.0 1.0 1.2 1.2 100 100 50 50 50 50 100 100 2.0 15 2.0 1.5 1.5 1.5 2.0 15 3.0 10 6.0 6.0 6.0 6.0 3.0 10 5 4 4 5 9 10 5 4

Case 46301 SOT416/SC90 (Common Anode)DAP222P9 80 100 100 70 1.2 100 3.5 4.0 4

Case 46301 SOT416/SC90 (Common Cathode)DAN222N9 80 100 100 70 1.2 100 3.5 4.0 5

Table 48. LowLeakage Medium Speed Switching Diodes SingleV(BR)R Device Marking Min Volts @ IBR (A) Max (nA) IR @ VR Volts Min Volts VF Max Volts @ IF (mA) CT(30) Max (pF) trr Max (ns) Case Style

Case 31808 TO236AB (SOT23)BAS116LT1 MMBD1000LT1JV AY 75 30 100 100 5.0 0.5 75 30 1.0 0.95 10 10 2.0 2.0 3000 3000 8 6

Case 41902 (SOT323)/(SC70)MMBD2000T1DH 30 100 0.5 30 0.95 10 2.0 3000 2

Case 318D04 (SC59)MMBD3000T1XP 30 100 0.5 30 0.95 10 2.0 3000 2

Case 42504 (SOD123)MMSD1000T14K 30 100 0.5 30 0.95 10 2.0 3000 1



Selector Guide 133

Switching Diodes (continued)Table 49. LowLeakage Medium Speed Switching Diodes DualV(BR)R Device Marking Min Volts @ IBR (A) Max (nA) IR @ VR Volts Min Volts VF Max Volts @ IF (mA) CT(30) Max (pF) trr Max (ns) Case Style

Case 31808 TO236AB (SOT23)BAV170LT1 BAV199LT1 BAW156LT1 MMBD1005LT1 MMBD1010LT1JX JY JZ A3 A5 70 70 70 30 30 100 100 100 100 100 5.0 5.0 5.0 0.5 0.5 70 70 70 30 30 1.0 1.0 1.0 0.95 0.95 10 10 10 10 10 2.0 2.0 2.0 2.0 2.0 3000 3000 3000 3000 3000 9 11 12 12 9

Case 41902 (SOT323)/(SC70) DUALMMBD2005T1 MMBD2010T1DI DP 30 30 100 100 0.5 0.5 30 30 0.95 0.95 10 10 2.0 2.0 3000 3000 4 5

Case 318D04 (SC59) DUALMMBD3005T1 MMBD3010T1(30) V = 0 V, f = 1.0 MHz R

XQ XS

30 30

100 100

0.5 0.5

30 30

0.95 0.95

10 10

2.0 2.0

3000 3000

5 3


Selector Guide 134


Multiple Switching DiodesMultiple diode configurations utilize monolithic structures fabricated by the planar process. They are designed to satisfy fast switching requirements as in core driver and encoding/decoding applications where their monolithic configurations offer lower cost, higher reliability and space savings.

14 1

16 1

CASE 751A03 SO14 PLASTIC

CASE 751B05 SO16 PLASTIC

Diode Array Diagrams 111 3 8 12 9 10 13 14 1 4 5 6 7 2

48 Diode Array (Common Anode)14 2 3 5 7 8 9 11 12 7 6 5

74 3 2 1

Dual 10 Diode Array

NC Pin 1, 4, 6, 10, 13

Isolated 7 Diode Array

8

9

10 11 12 13 14

21 1 2 14 3 5 7 8 9 11 12

58 2 14 3 11 12 4 5 9 10 7

16 Diode Array

Dual 8 Diode Array

NC Pin 4,6,10,13

NC Pin 6, 13

38 Diode Array (Common Cathode)14 2 3 5 7 8 9 11 12 1 2 3 4

65 6 7 8

NC Pin 1, 4, 6, 10, 13

Isolated 8 Diode Array

16 15 14 13 12 11 12

9

Table 50. Diode Arrays Case 751A03 SO14MMAD130 MMAD1103 MMAD1105 MMAD1106 MMAD1107 MMAD1109Dual 10 Diode Array 16 Diode Array 8 Diode Common Cathode Array 8 Diode Common Anode Array Dual 8 Diode Array 7 Isolated Diode Array 1 2 3 4 5 7

Case 751B05 SO16MMAD11088 Isolated Diode Array 6


Selector Guide 135

1 2

3 2 1

3 1 2

4

3


CASE 318D04 SC59

CASE 318E04 SOT223

PlasticEncapsulated Surface Mount DevicesEnergy. Its something Motorola is putting a lot of energy into helping save. Thats why were introducing our GreenLine portfolio of devices, featuring energyconserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the power demands of your products. Wide Range of Applications Currently, our portfolio consists of three families. LowLeakage Switching Diodes: With reverse leakage specifications guaranteed to 500 pA, they help extend battery life, making them ideal for small batteryoperated systems in which standby power is essential. Applications include ESD protection, reverse voltage protection, and steering logic. Bipolar Output Driver Transistors: Offering ultralow collector saturation voltage, they deliver more energy to the intended load with less power wasted through dissipation loss. They are especially effective in todays lower voltage batterypowered applications, and prolong battery life in portable and handheld communications and personal digital equipment.

6 1

5

34 2

2

3

1 2 CASE 41902 SC70/SOT3231

CASE 318G02 TSOP6

CASE 42504 SOD123

Small Signal HDTMOS: These devices provide our lowest ever drainsource resistance versus package size. Lower rDS(on) means less wasted energy through dissipation loss, making them especially effective for lowcurrent applications where energy conservation is crucial, such as low current switchmode power supplies, uninterruptable power supplies (UPS), power management systems, and bias switching. This makes them ideal for portable computertype products or any system where the combination of power management and energy conservation is key. Save Energy Save Money In an increasingly powerhungry world, Motorolas GreenLine portfolio makes powerful sense. So much sense that we plan to continue adding devices to the portfolio. Chances are, there are Motorola GreenLine devices applicable to one or more of your products ones that can help save energy, dollars and the environment.

Table 51. Bipolar Driver Transistor PNP These offer ultralow collector saturation voltage. Pinout: 1Base, 2Emitter, 3CollectorhFE@ IC Device Type Marking GLP GLP Case SOT23 SC59 V(BR)CEO 15 15 VCE(sat) 0.1 0.1 VBE(sat) 1.1 1.1 Min 300 300 Max 600 600 mA 100 100

MMBT1010LT1 MSD1010T1

Selector Guide 136


GreenLine (continued)Table 52. Low Leakage Switching Diodes These offer reverse leakage specifications guaranteed to 500 pA. Versions available in single and dual.V(BR)R Device Type Marking AY A3 A5 DH DI DP XP XQ XS 4K Case SOT23 SOT23 SOT23 SC70 SC70 SC70 SC59 SC59 SC59 SOD123 Style Single Dual Anode Dual Cathode Single Dual Anode Dual Cathode Single Dual Anode Dual Cathode Single Min Volts 30 30 30 30 30 30 30 30 30 30 @ IBR (A) 100 100 100 100 100 100 100 100 100 100 Max (nA) 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 IR @ VR Volts 30 30 30 30 30 30 30 30 30 30

MMBD1000LT1 MMBD1005LT1 MMBD1010LT1 MMBD2000T1 MMBD2005T1 MMBD2010T1 MMBD3000T1 MMBD3005T1 MMBD3010T1 MMSD1000T1

Table 53. Small Signal HDTMOS MOSFETs These provide the lowest drainsource resistance versus package size.RDS(on) Max Device Type Marking Channel @Vgs1 (10 V) @Vgs2 (4.5 V) @Vgs3 (2.5 V) VDSS VGS(th) Volts Min Volts Max Switching Time t(on) ns t(off) ns Style

Case 31808 TO236AB (SOT23) PChannel and NChannel2N7002LT1 BSS84LT1 BSS123LT1 BSS138LT1 MMBF0201NLT1 MMBF0202PLT1 MGSF1N02LT1 MGSF1N03LT1 MGSF1P02LT1 MGSF1P02ELT1702 PD SA J1 N1 P3 N P N N N P N N P P 7.5 6.0 1.0 1.4 0.085 0.10 3.5 0.16 10 3.5 1.4 3.5 0.125 0.145 0.5 0.21 60 50 100 50 20 20 20 30 20 20 1.0 0.8 0.8 0.5 1.0 1.0 1.0 1.0 1.0 0.7 2.5 2.0 2.8 1.5 2.4 2.4 2.4 2.4 2.4 1.2 2.5 20 20 2.5 2.5 2.5 2.5 2.5 2.5 16 40 20 15 16 16 16 16 15 21 21 21 21 21 21 21 21 21 21

Case 318G02 TSOP6 PChannel and NChannelMGSF3441VT1 MGSF3441XT1 MGSF3442VT1 MGSF3442XT1 MGSF3454VT1 MGSF3454XT1 MGSF3455VT1 MGSF3455XT1 P P N N N N P P 0.065 0.065 0.10 0.10 0.10 0.10 0.07 0.07 0.095 0.095 0.19 0.19 0.135 0.135 0.095 0.095 20 20 20 20 30 30 30 30 0.45 0.45 0.6 0.6 1.0 1.0 1.0 1.0 27 27 8.0 8.0 10 10 10 10 52 52 36 36 20 20 20 20 1 1 1 1 1 1 1 1

Case 41902 SC70/SOT323MMBF2202PT1 MMBF2201NT1P3 N1 P N 2.2 1.0 3.5 1.4 20 20 1.0 1.0 2.4 2.4 2.5 2.5 16 15 7 7



Selector Guide 137

Small Signal Multiintegrated Devices1 2

6

5

3

41 2

3 CASE 419B01 SOT363 VCC (4) Vin 1.0 k Q1 R2

CASE 31808 SOT23 Vout (3)

R1

6.8 V (1) 33 k GND (2)

R3 Q2 VENBL (5) R5 R4 Q4 R6

Vref (6) Iout (1)

MDC3105LT1

GND (2) and (3) MDC5001T1

INTERNAL CIRCUIT DIAGRAMS Table 54. Low Voltage Bias Stabilizer A silicon SMALLBLOCK integrated circuit which maintains stable bias current in various discrete bipolar junction and field effect transistors.VCC (Volts) Device Type Marking Min Max ICC A Vref Volts Vref Volts

Case 419B01 SOT363MDC5001T1E6 1.8 10 200 2.1 50

Table 55. Integrated Relay/Solenoid Driver Monolithic circuit block to switch 3.0 V to 5.0 V relays. It is intended to replace an array of three to six discrete components.VCC (Volts) Device Type Min Max Min Vin (Volts) Max Vsat (Volts) Iin (mA) IC(on) (mA)

Case 31808 SOT23MDC3105LT12.0 5.5 2.0 5.5 0.4 2.5 250


Selector Guide 138


Section 2Plastic-Encapsulated Transistors

In Brief . . .Motorolas plastic transistors and diodes encompass hundreds of devices spanning the gamut from general-purpose amplifiers and switches with a wide variety of characteristics to dedicated special-purpose devices for the most demanding applications. The popular TO-92, 1-Watt TO-92 and TO-116 combine proven reliability performance and economy for through-the-hole manufacturing, while the SOT-23, SC-59, SC-70/SOT-323, SC90/SOT416, SOT-223, and SO-16 offer the same solutions for surface mount manufacturing. As an additional service to our customers Motorola will, upon request, supply many of these devices in tape and reel for automatic insertion. Contact your Motorola representative for ordering information. This section contains both single and multiple plasticencapsulated transistors. NOTE: All SOT-23 package devices have had a T1 suffix NOTE: added to the device title.

1

2

3

CASE 29-04 (TO-226AA) TO-92

1

2

3

CASE 29-05 (TO-226AE) 1 WATT TO-92

3 3 1 2 2 1 1 2 4

3

CASE 318-08 (TO-236AB) SOT-23

CASE 318D-04 SC-59

CASE 318E-04 (TO-261AA) SOT-223

3

3 2

1 2

1

CASE 419-02 SC-70/SOT-323

CASE 463-01 SC-90/SOT-416

16 14 1 1

CASE 646-06 (TO-116)

CASE 751B-05 SO-16Not to Scale


21

EMBOSSED TAPE AND REELSOT-23, SC-59, SC-70/SOT-323, SC90/SOT416, SOT-223 and SO-16 packages are available only in Tape and Reel. Use the appropriate suffix indicated below to order any of the SOT-23, SC-59, SC-70/SOT-323, SOT-223 and SO-16 packages. (See Section 6 on Packaging for additional information). SOT-23: available in 8 mm Tape and Reel Use the device title (which already includes the T1 suffix) to order the 7 inch/3000 unit reel. Replace the T1 suffix in the device title with a T3 suffix to order the 13 inch/10,000 unit reel. available in 8 mm Tape and Reel Use the device title (which already includes the T1 suffix) to order the 7 inch/3000 unit reel. Replace the T1 suffix in the device title with a T3 suffix to order the 13 inch/10,000 unit reel. available in 8 mm Tape and Reel Use the device title (which already includes the T1 suffix) to order the 7 inch/3000 unit reel. Replace the T1 suffix in the device title with a T3 suffix to order the 13 inch/10,000 unit reel. available in 12 mm Tape and Reel Use the device title (which already includes the T1 suffix) to order the 7 inch/1000 unit reel. Replace the T1 suffix in the device title with a T3 suffix to order the 13 inch/4000 unit reel. available in 16 mm Tape and Reel Add an R1 suffix to the device title to order the 7 inch/500 unit reel. Add an R2 suffix to the device title to order the 13 inch/2500 unit reel.

SC-59:

SC-70/ SOT-323:

SOT-223:

SO-16:

RADIAL TAPE IN FAN FOLD BOX OR REELTO-92 packages are available in both bulk shipments and in Radial Tape in Fan Fold Boxes or Reels. Fan Fold Boxes and Radial Tape Reel are the best methods for capturing devices for automatic insertion in printed circuit boards. TO-92: available in Fan Fold Box Add an RLR suffix and the appropriate Style code* to the device title to order the Fan Fold box. available in 365 mm Radial Tape Reel Add an RLR suffix and the appropriate Style code* to the device title to order the Radial Tape Reel. *Refer to Section 6 on Packaging for Style code characters and additional information on ordering *requirements.

DEVICE MARKINGS/DATE CODE CHARACTERSSOT-23, SC-59, SC-70/SOT-323, and the SC90/SOT416 packages have a device marking and a date code etched on the device. The generic example below depicts both the device marking and a representation of the date code that appears on the SC-70/SOT-323, SC-59 and SOT-23 packages.

ABC DThe D represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.

22


MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose TransistorsNPN Silicon

2N3903 2N3904**Motorola Preferred Device

COLLECTOR 3 2 BASE 1 EMITTER

1 2 3

MAXIMUM RATINGSRating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 60 6.0 200 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C CASE 2904, STYLE 1 TO92 (TO226AA)

THERMAL CHARACTERISTICS(1)Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)Characteristic Symbol Min Max Unit

OFF CHARACTERISTICSCollector Emitter Breakdown Voltage (2) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. Indicates Data in addition to JEDEC Requirements. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 60 6.0 50 50 Vdc Vdc Vdc nAdc nAdc

v

v

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2


23

2N3903 2N3904ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)Characteristic Symbol Min Max Unit

ON CHARACTERISTICSDC Current Gain(1) (IC = 0.1 mAdc, VCE = 1.0 Vdc) hFE 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 VCE(sat) VBE(sat) 0.65 0.85 0.95 0.2 0.3 Vdc 20 40 35 70 50 100 30 60 15 30 150 300 Vdc

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)



Collector Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc Base Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)

SMALL SIGNAL CHARACTERISTICSCurrent Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz) 2N3903 2N3904 2N3903 2N3904 hre 2N3903 2N3904 hfe 2N3903 2N3904 hoe NF 6.0 5.0 50 100 1.0 200 400 40 0.1 0.5 5.0 8.0 fT 2N3903 2N3904 Cobo Cibo hie 1.0 1.0 8.0 10 X 10 4 250 300 4.0 8.0 pF pF k MHz

mmhosdB

SWITCHING CHARACTERISTICSDelay Time Rise Time Storage Time Fall Time 1. Pulse Test: Pulse Width ( (VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) 2N3903 2N3904 td tr ts tf 35 35 175 200 50 ns ns ns ns

v 300 ms; Duty Cycle v 2.0%.

24


2N3903 2N3904DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 k 0 0.5 V < 1 ns CS < 4 pF* 9.1 V < 1 ns 1N916 CS < 4 pF* 275 10 < t1 < 500 ms DUTY CYCLE = 2% t1 +3 V +10.9 V 275 10 k

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Equivalent Test Circuit

Figure 2. Storage and Fall Time Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25C TJ = 125C 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cibo 3.0 2.0 Cobo 5000 3000 2000 1000 700 500 300 200 100 70 50 QT QA VCC = 40 V IC/IB = 10

1.0 0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

20 30 40

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

REVERSE BIAS VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitance

Figure 4. Charge Data


25

2N3903 2N3904500 300 200 100 70 50 30 20 10 7 5 td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 2.0 V 50 70 100 200 40 V 15 V 10 7 5 IC/IB = 10 500 300 200 t r, RISE TIME (ns) 100 70 50 30 20 VCC = 40 V IC/IB = 10

TIME (ns)

tr @ VCC = 3.0 V

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200


Figure 5. Turn On Time500 300 200 t s, STORAGE TIME (ns) 100 70 50 30 20 10 7 5 IC/IB = 20 IC/IB = 10 IC/IB = 20 IC/IB = 10 500 300 200

Figure 6. Rise Time

ts = ts 1/8 tf IB1 = IB2 t f , FALL TIME (ns)

VCC = 40 V IB1 = IB2 IC/IB = 20

100 70 50 30 20 10 7 5 IC/IB = 10

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200



Figure 7. Storage Time

Figure 8. Fall Time

TYPICAL AUDIO SMALL SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS(VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz)12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 500 IC = 100 A SOURCE RESISTANCE = 200 IC = 1.0 mA 14 f = 1.0 kHz 12 IC = 1.0 mA

W WNF, NOISE FIGURE (dB)

SOURCE RESISTANCE = 200 IC = 0.5 mA

10 8 6 4 2

IC = 0.5 mA IC = 50 mA IC = 100 mA

SOURCE RESISTANCE = 1.0 k IC = 50 A

m

m

W4.0 10 20 40 100

0.2

0.4

1.0

2.0

0

0.1

0.2

0.4

1.0

2.0

4.0

10

20

40

100

f, FREQUENCY (kHz)

RS, S

Selector Guide

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