Selection Guide - Profusion Plc · Selection Guide The all contents ... ・SBD : VRM = 40 V ~ 150V...

P.1DITOUSE-SGE 2015.01.29

Diode by Circuit Types

Selection Guide

The all contents in this document are as of date of publication.Make sure thatthis is the latest revision of the document beforeuse. Please check the details of the product by data sheet.http://www.sanken-ele.co.jp/en

To place orders or request samples, please contact distributor Profusion plc:[email protected]

http://www.sanken-ele.co.jp/en












Diodes by Circuit TypesDiodes are used in peripheral circuit of power supply.A part of diode lineup is shown below. Please refer to Sanken’s catalog or website for more information.

Power Supply Application Diode Application page

Non-isolated Buck/Buck-boost Circuit

Low power application For motor control Auxiliary power supply LED lighting, etc.

Freewheel Diode (FRD) P.3

Fly-back Circuit

Low to middle power application Adapter Auxiliary power supply LED lighting, etc.

Snubber Diode (SARS) P.6

Secondary Rectification Diode・SBD : VRM = 40 V ~ 150V・FRD : VRM = 200 V ~ 600 V

P.8LLC Circuit

High power application OA , AV Industrial equipment LED street light, etc.

Bootstrap Diode (FRD) P.14

Power Factor Correction (PFC)

Application for 75W or more Industrial equipment LED lighting, etc.

For PFC・Bypass Diode (Acceptable large current )

・Rectification Diode (FRD)P.15

AC/DC Convertor

VAC

VOUT

AC/DC Convertor

VAC

VOUT

Secondary Rectification Diode

Snubber Diode

VOUT

GND

AC/DC Convertor

GND

REG

VS


Bootstrap Diode

VAC

VPFCOUT

PFCControl IC

Rectification Diode

Bypass Diode

AC/DC Convertor

VAC

VOUT


AC/DC Convertor

VAC

VOUT

Freewheel DiodeFor Non-isolated Buck and Buck-boost Circuit

Package IF VRM Features Link

SMD Type (SJP) 1A to 3A 200 to 600VFast recovery

trr ≤ 50nsP.4

Through-hole Type(Axial, TO220)

1A to 10A 500 to 600VFast recovery

trr ≤ 50nsP.5

Since buck and buck-boost offline converter IC operates by high frequency, recovery characteristic of freewheel diode needs to be fast. In order for high circuit efficiency, it is recommended to select VF of the diode as low as possible.The fast recovery diodes with low VF for freewheeling are as follows;

AC/DC Convertor

VAC

VOUT

Buck circuit Buck-boost circuit

Freewheel Diode


Fast Recovery Diode (SMD Type) Freewheel Diode For Non-Isolated Buck and Buck-boost Circuit

Fast Recovery, trr ≤ 50ns

VRM = 200V~600V

IF = 1A~3AX / Y / Z

= 4.5 : 2.6 : 2.15

Unit : mm

VRM IF (AVG) Products Package

IFSM

50HzHalf wave

VF trr

VF (max) IF IF:IR=1:1

200V

1.0A SJPL-D2

SJP

25A 0.98V 1.0A 50ns

2.0A SJPL-H2 25A 0.98V 2.0A 50ns

3.0A SJPL-L2 60A 0.98V 3.0A 50ns

400V 1.5A SJPL-F4

SJP25A 1.3V 1.5A 50ns

3.0A SJPL-L4 30A 1.3V 3.0A 50ns

500V 1.0A SJPD-D5

SJP20A 1.4V 1.0A 40ns

3.0A SJPD-L5 50A 1.4V 3.0A 50ns

600V 2.0A SJPL-H6 SJP 30A 1.5V 2.0A 50ns

Package

SJP


Fast Recovery, trr ≤ 50ns

VRM = 200V~600V

IF = 1A~10A

Fast Recovery Diode (Through-hole Type) Freewheel Diode For Non-Isolated Buck and Buck-boost Circuit

VRM IF (AVG) Products PackageIFSM

50HzHalf wave

VF trr

VF (max) IF IF：IR=1:1

200V

1.0A AL01Z Axial (φ2.4) 25A 0.98V 1.0A 50ns

2.0A RL10Z Axial (φ4.0) 30A 0.98V 2.0A 50ns

3.5A RL4Z Axial (φ6.5) 80A 0.95V 3.5A 50ns

400V

1.0A AL01 Axial(φ2.4) 20A 1.3V 1.0A 50ns

1.5A EL1 Axial(φ2.7) 40A 1.3V 1.5A 50ns

2.0A RL2 Axial (φ4.0) 40A 1.3V 2.0A 50ns

5.0A FML-G14S TO-220F-2L 70A 1.3V 5.0A 50ns

10AFML-24S TO-220F-3L 70A 1.3V 5.0A 50ns

FMXA-1104S TO-220F-2L 100A 1.5V 10A 25ns

600V

1.2A RD2A Axial (φ4.0) 30A 1.55V 1.2A 50ns

3.0A RL4A Axial (φ6.5) 80A 1.5V 3.0A 50ns

5.0A FML-S16S TO-220F-2L 50A 1.7V 5.0A 50ns

10AFMD-G26S

TO-220F-2L 100A1.7V 10A 50ns

FMXA-1106S 1.98V 10A 28ns

TO220F-2Lφ2.4 φ2.7 φ4.0 φ6.5Package

Axial

TO220F-3L(Center tap)

http://azb0-ptlwb1/pit/PKG/TO-220F-3L(2).png

http://azb0-ptlwb1/pit/PKG/TO-220F-2L(3).png


Power SupplyControl IC

VAC

Snubber

Controller

SARS

Discharge Loop

Serge Absorb Loop

VDS

Snubber

Power SupplyControl IC

VAC

Controller

Discharge Loop

Serge Absorb Loop

VDS

SARS, Diode for Snubber CircuitUsing SARSUsing FLR Diode

When MOSFET turns off, serge current flows on “Surge

Absorb loop” and It is absorbed by capacitor.

The electrical charge of capacitor is discharged

through ”Discharge loop”. The power is not transferred to

the secondary side. Thus it becomes power dissipation.

When this capacitor is discharged, the recovery current of

the diode flows on the MOSFET. FLR (Fast Recovery Diode)

is beneficial for preventing the MOSFET damage.

When SARS is used, the electrical charge of the capacitor

is discharged through ”Discharge loop” in recovery period

of SARS and this power is transferred to the secondary

side. Thus high circuit efficiency can be achieved.

When this capacitor is discharged, the instantaneous

recovery current of the diode flows on the MOSFET. It is

recommended to add a resistor in series with SARS for the

damage control of MOSFET. (Patented circuit)


Package

SJP TO-220F-2L Axial-φ2.7mm/φ0.60mm

X / Y / Z

= 4.5 : 2.6 : 2.15

Unit : mm

Axial-φ4.0mm/φ0.78mm

TypePart

NumberVRM

IF

(AVG)

IFSM

50HzHalf-wave

VF

trrIF：IR=1：1

PackageVF

(max)IF

Externalresistance

SARS01 800 V 1.2 A 110 A 0.92 V 1.2 A 2 to18 μs Axial-φ2.7/φ0.60

SARS02 800 V 1.5 A 100 A 0.92 V 1.5 A 2 to18 μs Axial-φ4.0/φ0.78

SARS05 800 V 1 A 30 A 1.05 V 1 A 2 to 18 μsSJP(SMA:4.5×

2.6)

Built-in resistance(22Ω)

SARS10 800 V 0.3 A 1.5 A 13 V 0.5 A 1 to 9 μs TO220F-2L

Low Noise, Improve Circuit Efficiency

SARS, Diode for Snubber Circuit

Low noise;

Prevention of ringing at Power MOSFET turn-off

PCB area saving;

Reducing number of filter circuit components

Improve circuit efficiency


Diode for Secondary RectificationThe secondary rectification diode have forward current flow for charging Secondary electrolytic capacitor and recovery current flow.In order for high circuit efficiency, it is recommended to select the diode with low VF and fast recovery characteristics.

AC/DC convertor IC

VAC

Cont.

GND

VOUT


Flyback Type Half bridge Type

LLC control IC

VOUT

GND

REG

VS


DC input

VB

VRM Diode IF(AVG) VF trr Link

40 V, 60 V Schottky 10 ~ 30A ≤ 0.7 V － P.9

80 ~ 150 V Schottky 10 ~ 30A ≤ 0.92 V － P.10

200 V, 300 V Fast Recovery 10 ~ 20A ≤ 1.3V 17 ~ 40ns P.11

400 V, 600V Fast Recovery 10 ~ 20A ≤ 1.98V 25 ~ 50ns P.12

650V SiC Schottky 10 ~ 20A ≤ 1.75 V － P.13


Schottky Diode, VRM ≥ 40V Secondary Rectification Diode

Low VF ≤ 0.7 V

VRM = 40 V ~ 60 V

TO-220F-3L

VRM IF (AVG) Package Part NumberIFSM

50HzHalf wave

VF

VF (max) IF

40 V

5 A x 2

TO-220F-3L

FMW-24L 100 A 0.55 V 5 A

7.5 A x 2 FMW-24H 120A 0.55V 7.5A

10 A x 2 FMW-2204 150 A 0.55 V 10 A

15 A x 2 TO-3PF-3L FMW-4304 150A 0.55V 15A

60 V

5 A x 2

TO-220F-3L

FMW-2106 100 A 0.70 V 5 A

7.5 A x 2 FMW-2156 100 A 0.70 V 7.5 A

10 A x 2 FMW-2206 120 A 0.70 V 10 A

15 A x 2 TO-3PF-3L FMW-4306 150A 0.70V 15A

TO-3PF-3L


Schottky Diode, VRM ≥ 80V Secondary Rectification Diode

Low VF ≤ 0.92 V

VRM = 80 V ~ 150 V

VRM IF (AVG) Package Part NumberIFSM

50HzHalf wave

VF

VF (max) IF

80 V10 A x 2

TO-220F-3LFMEN-2208 120 A 0.76 V 10 A

15 A x 2 FMEN-2308 150 A 0.765 V 15 A

90 V 5 A x 2 TO-220F-3L FMW-2109 50 A 0.90 V 5.0 A

100 V

5 A x 2

TO-220F-3L

FMEN-210A 100 A 0.85 V 5.0 A

7.5 A x 2 FMEN-215A 100 A 0.85 V 7.5 A

10 A x 2 FMEN-220A 120 A 0.85 V 10 A

15 A x 2 FMEN-230A 150 A 0.85 V 15 A

15 A x 2 TO-3PF-3L FMEN-430A 150 A 0.85 V 15 A

150 V

5 A x 2

TO-220F-3L

FMEN-210B 100 A 0.92 V 5 .0A

10 A x 2 FMEN-220B 120 A 0.92 V 10 A

15 A x 2 FMEN-230B 150 A 0.92 V 15 A

TO-220F-3L TO-3PF-3L


Fast Recovery Diode, trr ≤ 40ns VRM ≥ 200V Secondary Rectification Diode

Fast Recovery , trr = 17 ~ 40ns

Low VF ≤ 1.3V

VRM = 200 V ~ 300 V TO-220F-3LTO-220F-2L

VRM IF (AVG) Package Part NumberIFSM (A)50Hz

Half wave

VF trrIF：IR=1：1VF (max) IF

200 V

10 A TO-220F-2LFMX-G22S 150 0.98 V 10 A 30 ns

FML-G22S 150 0.98 V 10 A 40 ns

5 A x 2

TO-220F-3L

FMX-12SL 65 1.25 V 5 A 30 ns

5 A x 2 FMXA-2102ST 100 1.20 V 5 A 25 ns

7.5 A x 2 FMX-22SL 100 0.98 V 7.5 A 30 ns

10 A x 2 FMXA-2202S 100 1.20 V 10 A 25 ns

10 A x 2 TO-3PF-3L FMXS-4202S 150 1.05 V 10 A 30 ns

300 V

5 A x 2

TO-220F-3L

FMX-23S 65 1.30 V 5 A 30 ns

7.5 A x 2 FMXA-2153S 75 1.28 V 7.5 A 17 ns

10 A x 2 FMXA-2203S 100 1.30 V 10 A 25 ns

10 A x 2 TO-3PF-3L FMXA-4203S 100 1.30 V 10 A 25 ns

TO-3PF-3L



Fast Recovery , trr = 25 ~ 50ns

Low VF ≤ 1.98V

VRM = 400 V ~ 600 V


Half wave


400 V10 A TO-220F-2L FMXA-1104S 100 1.50 V 10 A 25 ns

10 A x 2 TO-220F-3L FML-24S 70 1.30 V 5 A 50 ns

600 V

10 ATO-220F-2L

FMD-G26S 100 1.7 V 10 A 50 ns

FMX-1106S 50 1.6 V 10 A 30 ns

FMXA-1106S 100 1.98 V 10 A 28 ns

FMXK-1106S 100 1.75 V 10 A 27 ns

20A FMXS-1206S 180 1.6V 20A 35ns

10 A x 2 TO-220F-3LFMXS-2206S 100 1.6 V 10 A 30 ns

FMXK-2206S 100 1.75 V 10 A 27 ns

10 A x 2 TO-3PF-3L FMD-4206S 100 1.7 V 10 A 50 ns

TO-220F-3LTO-220F-2L TO-3PF-3L

Fast Recovery Diode, trr ≤ 50ns VRM ≥ 400V


SiC Schottky Diode, VRM = 650V Secondary Rectification Diode

High voltage Schottky Diode

Low VF ≤ 1.75 V

VRM = 650 V


Half wave


650 V10 A TO-220F-2L FMCA-11065 40A 1.75 V 10 A －

10 A x 2 TO-220F-3L FMCA-22065 40A 1.75 V 10 A －

TO-220F-3LTO-220F-2L


Bootstrap Diode

LLC control IC

VOUT

GND

REG

VS

Bootstrap DiodeDC input

VB

Bootstrap Diode is used for high-side driver of power supply circuit.Since the recovery current flows on the diode depending on the switching frequency of the driver, it is recommended to use a diode with fast recovery characteristic.For the bootstrap diode selection, the applied voltage of Power MOSFET and the high-side sink current need to be considered.

SJP

VRM IF (AV) パッケージ Part NumberIFSM

50Hz Half wave

VF (max.) (IF=IF (AV))

trr IF：IR=1：1

600 V

2.0 A SJP SJPL-H6 30 A 1.5 V 50 ns

2.0 A SJP SJPX-H6 20 A 1.5 V 30 ns

0.5 A Axial φ2.4/φ0.6 AG01A 15 A 1.8 V 100 ns

0.6 A Axial φ2.7/φ0.78 EG1A 10 A 2.0 V 100 ns

1.0 A Axial φ4.0/φ0.78 RG10A 50 A 2.0 V 100 ns

1.2 A Axial φ4.0/φ0.98 RD2A 30 A 1.55 V 50 ns

800 V 0.5 A Axial φ2.4/φ0.6 AB01B 10 A 2.0 V 200 ns

X / Y / Z

= 4.5 : 2.6 :

2.15(mm)

Axial

Φ2.4mm

/φ0.6mm

Axial

Φ2.7mm

/φ0.78mm

Axial

Φ4.0mm

/φ0.78mm

Axial

Φ4.0mm

/φ0.98mm

Y

Z

X


Operation Mode Features Link

Bypass Diode ―High Power, IFSM > 50A Low VF ≤ 0.95V

P.18

Rectification Diode

DCMCRM

Low VF ≤ 1.3V P.19

CCM• Fast recovery diode, trr ≤ 50ns• SiC Schottky Diode

P.20P.21

VAC

VPFCOUT

GND

PFCControl IC

Rectification Diode

Bypass Diode

Diode for PFC

PFC circuit consists of a Bypass Diode and a Rectification Diode.Each diode needs to be selected according to their use.

Points of selection for Bypass Diode→P.16

Points of selection for Rectification Diode →P.17


Points of Selection for Bypass Diode

VAC

VPFCOUT

GND

PFCControl IC

Rectification Diode

Bypass Diode1. Functions of Bypass Diode

For Protecting MOSFET and Rectification Diode from Inrush CurrentWhen the inductance is saturated by the inrush current, large current flows to the rectification diode, the diode has a risk of breakdown.Since saturation of inductance is prevented by flowing inrush current to the bypass diode, MOSFET and rectification diode are protected.

For protecting Bridge Diode from Lightning SurgeIf the lightning surge is injected to the circuit, bridge diode has a risk of breakdown. Thus, the bypass diode changes the energy of the lightning surge flow and it is absorbed by electrolytic capacitor.

Key points of Bypass Diode selection;1) Acceptable large current in short period (IFSM > 50A)2) Low VF than rectification diode (VF ≤ 0.95V)

2. Electrical Characteristics of Bypass Diode

In order to change flow of the inrush current and the lightning surge to the bypass diode, VF of Bypass diode needs to be lower than VF of rectification diode.When output voltage becomes higher than input voltage, the bypass diode turns off. Thus recovery characteristic of the diode is not considered. The pulse current and VF characteristic needs to be considered for the diode selection.


The Rectification Diode of PFC should be selected according to the operation mode of PFC

Point of Selection for Rectification Diode

Discontinuous Conduction Mode (DCM)

Critical Conduction Mode(CRM)

Continuous Conduction Mode(CCM)

Features

There is a period when the current that runs through L becomes zero (Frequency is fixed)

L value: Small

The current that runs through L becomes zero for an instant (ON time is fixed)

L value: Medium

The current that runs through L does not become zero (Frequency is fixed)

L value: Large

Advantages

MOSFET turns ON when the current that runs through a diode becomes zero ・There is almost no recovery current in the rectifier diode ・Switching noise is small

With almost no recovery current, better efficiency is achieved when focusing on VF

Peak current of MOSFET is small

Ripple of input current is small

Normal mode noise is small

Disadvantages

Peak current of MOSFET is large

Ripple of input current is large

Normal mode noise is large

MOSFET turns ON when the current runs through the diode

・Recovery current runs through the rectifier diode, resulting in large loss

・Switching noise is large

To reduce loss, use a diode with excellent reverse recovery time (trr)

Key points in selecting a rectifier diode ;・DCM, CRM: Low VF Diode (VF ≤ 1.3V)・CCM: Fast Recovery Diode (trr ≤ 50 ns) with Low VF

IL IL IL


Low VF = 0.95V(max.) VRM = 600V

VF ≤ 0.95 V, VRM = 600 VBypass Diode for PFC

φ4.0mm/φ0.78mm φ6.5mm/φ1.4mm Axial-φ2.7mm/φ0.78mm

VRM IF (AVG) Package Part Number

IFSM

10ms

Half wave

VF IR/H.IR(VR=VRM)VF (max.) IF

600 V

1.0 A Axial φ2.7 EM2A 80 A 0.92 1.2 A 10 μA / 50 μA

1.2 A Axial φ4.0 RM 11A 100 A 0.92 1.5 A 10 μA / 50 μA



1.8 A Axial φ6.5 RM 4AM 350 A 0.92 3.5 A 10 μA / 50 μA


Axial φ6.5 TO-220F-2L TO-220F-3L TO-3PF-2L TO-3PF-3L TO-3P-3L TO-247-3L

VF ≤ 1.3 V, VRM = 600 V

For DCM and CRM Low VF = 1.30V(max.) VRM = 600V trr ≤ 200ns

Rectification Diode for DCM and CRM PFC

VRM IF (AVG) PackagePart

Number

VF IFSM

50Hz Half wavetrr

IF：IR=1：1VF(Max.) IF

600 V

3.0 AAxial (φ6.5/φ1.4) RY2A 1.15 V 3.0 A 50 A 200 ns

Axial (φ6.5/φ1.4) RN4A 1.30 V 3.0 A 50 A 100 ns

5.0 A TO-220F-2L FMN-1056S 1.30 V 5.0 A 60 A 100 ns

10 A TO-220F-2L FMNS-1106S 1.30 V 10 A 100 A 100 ns

15A TO-220F-2L FMN-1156S 1.30 V 15 A 150 A 100 ns

20 A TO-220F-2L FMN-1206S 1.30 V 20 A 150 A 150 ns

30 A TO-3PF-2L FMN-3306S 1.30 V 30 A 150 A 200 ns

10 A x 2 TO-220F-3L FMN-2206S 1.30 V 10 A 150 A 100 ns

15 A x 2

TO-3PF-3L FMN-4306S 1.30 V 15 A 150 A 150 ns

TO-3P-3L CTNS-4306S 1.30 V 15 A 150 A 100 ns

TO-247-3L CTNS-6306S 1.30 V 15 A 150 A 100 ns

30 A x 2TO-3P-3L CTNS-4606S 1.30 V 30 A 150 A 150 ns

TO-247-3L CTNS-6606S 1.30 V 30 A 150 A 150 ns

UD

UD

UD

UD : Under Development


For CCM Fast Recovery Diode

trr = 50 ns (max.) VRM = 600VIF = 1.2 A to 20 A

trr ≤ 50 ns, VRM = 600 VRectification Diode for CCM PFC, Fast Recovery Diode


Number

VF IFSM

50HzHalf wave

trrIF：IR=1：1

VF (Max.) IF

600 V

1.2 A Axial (φ4.0/φ0.78) RD2A 1.55 V 1.2 A 30 A 50 ns

3.0 A Axial (φ6.5/φ1.4) RL4A 1.5 V 3.0 A 80 A 50 ns

5.0 A TO-220F-2L FMX-G16S 1.5 V 5 A 50 A 30 ns

8.0 A TO-220F-2L FMXK-1086S 1.75 V 8 A 100 A 27 ns

10 A TO-220F-2LFMXA-1106S 1.98 V 10 A 100 A 28 ns

FMX-1106S 1.60 V 10 A 100 A 30 ns

20 A TO-220F-2L FMXS-1206S 1.60 V 20 A 100 A 35 ns

Axial φ4.0 Axial φ6.5 TO-220F-2L



Number

VF IFSM

50HzHalf wave

trrIF：IR=1：1VF(Max.) IF

600 V

10 A x 2

TO-220F-3LFMXK-2206S 1.75 V 10 A 100 A 27 ns

FMXS-2206S 1.60 V 10 A 100 A 30 ns

TO-3PF-3L

FMXA-4206S 1.98 V 10 A 100 A 28 ns

FMX-4206S 1.50 V 10 A 100 A 30 ns

FMD-4206S 1.70 V 10 A 100 A 50 ns

15 A x 2TO-3P-3L CTXS-4306S 1.70 V 15 A 150 A 30 ns

TO-247-3L CTXS-6306S 1.70 V 15 A 100 A 30 ns

30 A x 2TO-3P-3L CTXS-4606S 1.70 V 30 A 150 A 35 ns

TO-247-3L CTXS-6606S 1.70 V 30 A 150 A 35 ns

650 V10 A TO-220F-2L FMCA-11065 1.75 V 10A 40 A SiC Schottky

10 A x 2 TO-220F-3L FMCA-22065 1.75 V 10A 40 A SiC Schottky

trr ≤ 50 ns, VRM = 600 V /650 V

TO-220F-2L TO-220F-3L TO-3PF-3L TO-3P-3L TO-247-3L

Rectification Diode for CCM PFC, Fast Recovery and SiC Schottky Diode

Fast recoverytrr ≤ 50 ns VRM = 600V, IF = 20 A to 60 A

SiC Schottky VRM = 650V , IF = 10 A to 20 A

UD : Under Development

UD

UD

UD

UD

UD


IMPORTANT NOTES

The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that thisis the latest revision of the document before use.

Application examples, operation examples and recommended examples described in this document are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights, life, body, property or any other rights of Sanken or any third party which may result from its use.

Unless otherwise agreed in writing by Sanken, Sanken makes no warranties of any kind, whether express or implied, as to the products, including product merchantability, and fitness for a particular purpose and special environment, and the information, including its accuracy, usefulness, and reliability, included in this document.

Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction.

Sanken products listed in this document are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), and whenever long life expectancy is required even in general purpose electronic equipment or apparatus, please contact your nearest Sanken sales representative to discuss, prior to the use of the products herein.The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited.

When using the products specified herein by either (i) combining other products or materials therewith or (ii) physically, chemically or otherwise processing or treating the products, please duly consider all possible risks that may result from all such uses in advance and proceed therewith at your own responsibility.

Anti radioactive ray design is not considered for the products listed herein.

Sanken assumes no responsibility for any troubles, such as dropping products caused during transportation out of Sanken’s distribution network.

The contents in this document must not be transcribed or copied without Sanken’s written consent.

DISTRIBUTOR

www.profusionplc.com

Southend-on-SeaEssexSS2 6UNUnited Kingdom

+44 (0)1702 [email protected]

Selection Guide - Profusion Plc · Selection Guide The all contents ... ・SBD : VRM = 40 V ~ 150V...

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Transcript of Selection Guide - Profusion Plc · Selection Guide The all contents ... ・SBD : VRM = 40 V ~ 150V...