Scattering of p-polarized light from Au and Ag gratings and the effect of surface polaritons
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A397 Surfacc Scicncc 146 (19X4) I-Y I North-Holland. Am~tcrdam SCATTERING OF p-POLARIZED LIGHT FROM Au AND Ag GRATINGS AND THE EFFECT OF SURFACE POLARITONS G. DIAZ and N. GARCiA Received 2 May 19X4: accepted for publication 26 June 1984 Lvght (p-polarlred) reflected at silver and gold gratmgs shows at certain angle\ of nwdencr (resonance angles) a minimum of the reflected mtsnsity. due to the excitation of surface plaamon\ by coupling with the corrugation of the surface. The depth of the mimmum IS a sensitive function of the amplitude h of a sinusoidal profile and it can become zero which indicatea the maximum excitation of surface plasmons or the maximum electro-magnetic field intensity in the wrface. With increasing h the minimum displaces to higher angles and its width increases. CIconsequence of the influence of the corrugation of the surface on the dispersion relation. We present a theoretical descrlptmn of expertmental observations published m the literature. The calculatmns are based on the extinctIon theorem; it is s hewn that the details of the experimental results as the position of the intensity minima. It.\ variation with the amplitude h of the s~nuao~dal profile. the deformation ~,f the intensity minimum with increasing h. etc. are well reproduced. The calculation\ dicplah quantitative agreement by dtrect comparison of ohserved and theoretical results. 10 Surface Scicncc 146 (lYX4) IO-16 h‘nrth-Holland. Atn\tcrdam METAL-SEMICONDUCTOR DIODES SENSITIVE TO SILANE AT ROOM TEMPERATURE Naoto YAMAMOTO, Yoshihiro FUJITA. Osamu AND0 and Hiroshi TSUBOMURA Rcccived 14 May 1984; accepted for publication 7 June lYX4 The electric current in an Au-TiOz JU”Cti0” dlodc under a forward bta\ i.\ enhanced b? introducing ailane in the ambient of air at room temperature The dmdc iz thu\ capable of xlcctively detecting ailanc down to a few ppm. A I’d-TiO, .lunctwn dmdc IS cllw wn\ltibc to .\~lanc. but a Cu-TiO, diode ia not. From Auger electron \pc‘ctnwx>pic mccl~urcnw~t. the formatmn of silicon oxide an a Au or I’d film cxpoxd to silane was conflrnwd. hut not on ;I <‘u film. The thickncas of the silicon oxide lhycr on the Au film h\ I h cxp<,urc to \Ilanc w.15 estimated to be 5 A.
Transcript of Scattering of p-polarized light from Au and Ag gratings and the effect of surface polaritons
A397
Surfacc Scicncc 146 (19X4) I-Y I North-Holland. Am~tcrdam
SCATTERING OF p-POLARIZED LIGHT FROM Au AND Ag GRATINGS AND THE EFFECT OF SURFACE POLARITONS
G. DIAZ and N. GARCiA
Received 2 May 19X4: accepted for publication 26 June 1984
Lvght (p-polarlred) reflected at silver and gold gratmgs shows at certain angle\ of nwdencr
(resonance angles) a minimum of the reflected mtsnsity. due to the excitation of surface plaamon\
by coupling with the corrugation of the surface. The depth of the mimmum IS a sensitive function
of the amplitude h of a sinusoidal profile and it can become zero which indicatea the maximum
excitation of surface plasmons or the maximum electro-magnetic field intensity in the wrface.
With increasing h the minimum displaces to higher angles and its width increases. CI consequence of
the influence of the corrugation of the surface on the dispersion relation. We present a theoretical
descrlptmn of expertmental observations published m the literature. The calculatmns are based on
the extinctIon theorem; it is s hewn that the details of the experimental results as the position of the
intensity minima. It.\ variation with the amplitude h of the s~nuao~dal profile. the deformation ~,f
the intensity minimum with increasing h. etc. are well reproduced. The calculation\ dicplah
quantitative agreement by dtrect comparison of ohserved and theoretical results.
10 Surface Scicncc 146 (lYX4) IO-16
h‘nrth-Holland. Atn\tcrdam
METAL-SEMICONDUCTOR DIODES SENSITIVE TO SILANE AT
ROOM TEMPERATURE
Naoto YAMAMOTO, Yoshihiro FUJITA. Osamu AND0 and Hiroshi TSUBOMURA
Rcccived 14 May 1984; accepted for publication 7 June lYX4
The electric current in an Au-TiOz JU”Cti0” dlodc under a forward bta\ i.\ enhanced b?
introducing ailane in the ambient of air at room temperature The dmdc iz thu\ capable of
xlcctively detecting ailanc down to a few ppm. A I’d-TiO, .lunctwn dmdc IS cllw wn\ltibc to
.\~lanc. but a Cu-TiO, diode ia not. From Auger electron \pc‘ctnwx>pic mccl~urcnw~t. the
formatmn of silicon oxide an a Au or I’d film cxpoxd to silane was conflrnwd. hut not on ;I <‘u
film. The thickncas of the silicon oxide lhycr on the Au film h\ I h cxp<,urc to \Ilanc w.15
estimated to be 5 A.
