Role of High-K Gate Dielectrics and Metal Gate Electrodes ... · 6 Review of High-K Physics on Si...
Transcript of Role of High-K Gate Dielectrics and Metal Gate Electrodes ... · 6 Review of High-K Physics on Si...
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Role of HighRole of High--K Gate Dielectrics K Gate Dielectrics and Metal Gate Electrodes in and Metal Gate Electrodes in
Emerging Nanoelectronic DevicesEmerging Nanoelectronic Devices
Robert Chau
Intel FellowDirector of Transistor Research
and Nanotechnology
Technology and Manufacturing GroupIntel Corporation
June 22, 2005
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ContentsIntroduction
Review of physics of high-K on Si
Emerging nanoelectronic devices– III-V nanoelectronics– Carbon nanotube FETs– Semiconductor nanowire FETs
Benchmarking emerging non-Si nanoelectronic devices versus conventional planar and non-planar Si transistors
Role of high-K/metal-gate in emerging nanoelectronic devices for future, potential high-performance and low-power logic applications
Summary
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Transistor Nanotechnology
Si Substrate
Metal Gate
High-kTri-Gate
S
G
D
III-V
S
50 nm35 nm
30 nm
SiGe S/D PMOS
Uniaxial strain
1.2nm thin gate oxide
90 nm65 nm
45 nm32 nm
20032005
20072009
2011+
Technology Generation
20 nm 10 nm
Manufacturing Development Research
SiGe S/D PMOS
Uniaxial Strain
1.2nm thin gate oxide
Focus of this talk: emerging nanoelectronic devices
5 nm5 nm
5 nm
SemiconductorNanowire Carbon
Nanotube
Emerging Nanoelectronic
Devices
Note: Future options subject to change
Si
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Experimental 10nm Si MOS Transistor
10nm Si transistors produced in research labs− Still a switch with gain
Need to benchmark emerging non-Si nanoelectronic research devices versus state-of-the-art Si research transistors
LG = 10nm
0
200
400
600
0 0.2 0.4 0.6 0.8DRAIN VOLTAGE [V]
DR
AIN
CU
RR
ENT
[A/µ
m]
00 0.2 0.4 0.6 0.80 0.2 0.4 0.6 0.80.6
0.75V0.65V0.55V
0.45V
0
200
400
600
0 0.2 0.4 0.6 0.8DRAIN VOLTAGE [V]
DR
AIN
CU
RR
ENT
[A/µ
m]
00 0.2 0.4 0.6 0.80 0.2 0.4 0.6 0.80.6
0.75V0.65V0.55V
0.45V
Si
Source: R. Chau et. al., Intel Corp., 61st DRC, June 2003
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• High-K phonons and gate plasmons modeled as electric dipoles
• Doped polySi gate (~1018 cm-3): When ETO < EGATE-PLASMON < ELO,in-resonance condition occurs which degrades channel mobility
• Metal gate (>1020 cm-3): Off-resonance condition weakens phonon-carrier coupling, hence channel mobility is recovered
TCAD Simulation*Poly-Si Gate
Si channel
High-K dielectric
EG
ELO
E’LO E’GETOT=E’LO+E’G
Poly-Si Gate
Si channel
High-K dielectric
EG
ELO
E’LO E’GETOT=E’LO+E’G
Metal Gate
Si channel
High-K dielectric
EG
ELO
E’LO E’GETOT=E’LO-E’G
Metal Gate
Si channel
High-K dielectric
EG
ELO
E’LO E’GETOT=E’LO-E’G
Poly-Si gate(In resonance)
Metal gate(off resonance)
* Source: R. Kotlyar et. al., Intel Corp., IEDM 2004
Review of High-K Physics on Si
EGATE-PLASMONELO
Mobility dip
ETO
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Review of High-K Physics on Si
• Surface phonon scattering in high-K is primary source of mobility degradation
• Metal gate is effective for screening phonon scattering and improves channel mobility
1.0E-05
1.5E-05
2.0E-05
2.5E-05
3.0E-05
3.5E-05
4.0E-05
4.5E-05
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
Effective Vertical Field (MV/cm)
d(1/
ueff)
/dT
Si/High-K/PolySi
Si/SiO2/PolySi
Phonon scattering
0
200
400
600
800
1000
1200
0 0.5 1 1.5Effective Vertical Field (MV/cm) Su
rfac
e Ph
onon
Lim
ited
Mob
ility
(cm
2 /V.s
)
P860
T = 25 CSi/High-K/PolySi
Si/SiO2/PolySi
Si/High-K/Metal-Gate
Channel mobility
Experimental Measurements Inverse Modeling
Source: R. Chau et. al., Intel Corp., IEEE EDL, June 2004
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Review of High-K Physics on Si
NDK
SDK
4.054.15
4.35
4.55
4.75
4.95
5.15
N+
pol
y
P+
pol
y
P-m
etal
N-m
etal
Met
al A
Met
al B
Met
al C
Met
al D
Met
al E
Met
al F
Met
al G
Met
al H
Met
al I
Met
al J
GATE ELECTRODE MATERIALS
WO
RK
FUN
CTI
ON
[eV
] P-type Metal on High-K
N-type Metal on High-K
N+ Poly-Si/SiO2
P+ Poly-Si/SiO2
Mid-gap Metals on High-K
NDK
SDK
4.054.15
4.35
4.55
4.75
4.95
5.15
N+
pol
y
P+
pol
y
P-m
etal
N-m
etal
Met
al A
Met
al B
Met
al C
Met
al D
Met
al E
Met
al F
Met
al G
Met
al H
Met
al I
Met
al J
GATE ELECTRODE MATERIALS
WO
RK
FUN
CTI
ON
[eV
] P-type Metal on High-K
N-type Metal on High-K
N+ Poly-Si/SiO2
P+ Poly-Si/SiO2
Mid-gap Metals on High-K
• Gate electrodes with the “right” work function are required for high-performance CMOS applications
Source: R. Chau, Intel Corp., AVS ICMI, March 2004
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Review of High-K Physics on Si
• Example of high-performance CMOS transistors on bulk-siliconwith high-K/metal-gate
– Correct VTH’s, high-mobility, low gate leakage
Source: R. Chau et. al., Intel Corp., IEEE EDL, June 2004
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Conventional Planar and Non-Planar Si Transistors
NMOS
Si Planar
Si Tri-Gate
Si Tri-Gate
Si Planar
NMOS0
0.3
0.6
0.9
1.2
1.5
1E+0 1E+1 1E+2 1E+3 1E+4 1E+5
ION / IOFF
GA
TE D
ELA
Y C
V/I
[ps
]
35nm Si Tri-Gate (VCC=1.1V)[High-K/metal-gate]
40nm Si Planar (VCC=1.1V)[Poly/SiO2]
70nm Si Planar (VCC=1.3V)[Poly/SiO2]
60nm Si Tri-Gate (VCC=1.3V)[Poly/SiO2]
NMOS
Need to benchmark emerging non-Sinanoelectronic devices versus these conventional planar and non-planar Si NMOS transistors
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Conventional Planar and Non-Planar Si Transistors
PMOS
Si Planar
Si Tri-Gate
Si Planar
Si Tri-Gate
Si Planar
PMOS
Need to benchmark emerging non-Sinanoelectronic devices versus these conventional planar and non-planar Si PMOS transistors
0.0
0.5
1.0
1.5
2.0
2.5
1E+0 1E+1 1E+2 1E+3 1E+4 1E+5
ION / IOFF
GA
TE D
ELA
Y C
V/I
[ps
]
35nm Si Tri-Gate (VCC=1.1V)[High-K/metal-gate]
40nm Si Planar (VCC=1.1V)[Poly/SiO2]
70nm Si Planar (VCC=1.3V)[Poly/SiO2]
PMOS
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Emerging Nanoelectronic Devices
• Semiconductornanowires withhigh-K gate dielectrics
Lg = 10 nm
(a)
Lg = 10 nm Gate
Source
Sibody
Drain
Gate
Source Drain
Source
CNTSingle -wallD = 1.4 nm
Gate(Pt)
Drain(Pd)
Lg = 75 nm
(d)
Source
CNTSingle -wallD = 1.4 nm
Gate(Pt)
Drain(Pd)
Lg = 75 nm
(d)
Source
CNTSingle -wallD = 1.4 nm
Gate(Pt)
Drain(Pd)
Lg = 75 nm
III-V
Gate
DrainSource
Source
(c)
Multiepitaxial
layersGate
DrainSource
Source
(c)
Multiepitaxial
layersGate
DrainSource
Source
Multiepitaxial
III-V layers5 nm5 nm
2.0 nm High-K Gate
5.0 nm Si Nanowire
5 nm5 nm
2.0 nm High-K Gate
5.0 nm Si Nanowire
• Carbon nanotube FETswith high-K gate dielectrics
• III-V quantum-well (Q-W)transistors (high-K gate dielectric is currently absent in III-V but required for logic applications) Role of High-K/metal-gate:
– enabling continued equivalent gate oxide thickness scaling and hence high performance, and controlling gate leakage
– required for high ION/IOFF ratios in III-V Q-W devices for logic
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Intrinsic Gate Delay CV/I for PMOS
• CNT shows significant p-ch CV/I improvement over Si– CNT has >20X higher effective p-ch mobility than Si
• Si nanowires currently do not show improvement over Si
D = 4 to 35nmD = 1 to 2.5nm
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Energy-Delay Product for PMOS
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Carbon Nanotube (CNT) p-FET withHigh-K/Metal-Gate
CNT FET exhibits low gate dielectric leakage with the use of high-KAmbipolar leakage identified as the major source of parasitic leakage in CNT (due to metal-CNT Schottky S/D contacts)
Drain current(ID)Source current(IS)
Gate leakage (IG)
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Capacitance of High-K/Metal-Gate onCarbon Nanotubes (CNT)
High-K dielectric constant has a stronger effect than high-K dielectric thickness in increasing gate capacitance of carbon nanotube FETs
*m/aF400~C
RTR
2ln
K2C
CCC
QM
PHYS
0OX
1QM
1OX
1TOTAL
µ
+πε
=
+= −−−
High-K Dielectric
Metal Gate
TPHYS
D=2R
* Guo et al, Applied Physics Letters 2002
CNT
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CV/I versus ION/IOFF Ratio
35nm Si Tri-Gate PMOS (VCC=1.1V)
40nm Si PMOS (VCC=1.1V)70nm Si PMOS (VCC=1.3V)
50nm CNT p-FET (VCC=0.3V)[Metal-CNT S/D contactscause ambipolar conduction]
80nm CNT n-FET (Vcc=0.5V)[Chemically-doped junctiondelays ambipolar conduction]
For ION/IOFF < 100, CNT p-FET shows improvement over Si due to higher channel mobility and lower VCC usedHighest ION/IOFF ratio in CNT limited by ambipolar conduction due to metal-CNT S/D contacts; chemically-doped junctions delays ambipolar conduction despite poor CV/I performance
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Physics of Silicon Nanowires
• Previous understanding: Reducing wire diameter reduces availabledensity of states for elastic scattering (1D), thus improving mobility
• Current understanding of Si nanowires– Impact of phonon scattering becomes significant above 50 K– Mobility at room temperature decreases with reducing diameter (< 10nm)
due to phonon scattering– Performance of Si nanowires limited by phonon scattering at room temp
TCAD Simulation (R. Kotlyar, Intel, APL 2004) Measurements
Room Temp.
3nm5nm
15nm9nm
Increasing temperature
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• n-channel CNT not as well established as p-channel CNT
• III-V (e.g. InSb) devices show significant CV/I improvement over Si– III-V devices have >50X higher effective n-ch mobility than Si– III-V devices operated at low VCC = 0.5V
Intrinsic gate delay CV/I for NMOS
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Energy-Delay Product for NMOS
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III-V Transistors for Low VCC
0
20
40
60
80
100
120
140
160
180
1 10 100 1000Power Dissipation (mW/mm)
Cut
off F
requ
ency
, fT
(GH
z)
InSb Vds=0.3VInSb Vds=0.5VInSb Vds=0.6VInSb Vds=0.7VSi Vds=0.5VSi Vds=0.7VSi Vds=1VSi Vds=1.2V
InSb QWFET(LG=200nm)
Si NMOS(LG=80nm)
5-10XLower PowerDissipation
0.5V 1.2V
0.3V
Teffm
00
f21
vL
gWLC
IWLVC
ICV
π====
GATE
DRAIN
DRAIN
SOURCE
III-V (InSb) Q-W Transistor
(Schottky metalgate with no gate dielectric)
Source: Intel & QinetiQ, ICSICT, Oct 2004
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IIIIII--V Nanoelectronics:V Nanoelectronics:EnergyEnergy--Delay Product vs Device Gate LengthDelay Product vs Device Gate Length
• InSb QW-FETs have the lowest NMOS energy-delay product(highest mobility and lowest operating VCC)
n-FET
Si MOSFETs
InSbQuantum-well/ Barrier
InSb/AlInSb
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IIIIII--V Nanoelectronics:V Nanoelectronics:HighHigh--K Required to Eliminate Schottky IK Required to Eliminate Schottky IGATEGATE
0.0001
0.001
0.01
0.1
1
-0.8 -0.6 -0.4 -0.2 0Gate Voltage, VGS [V]
Dra
in a
nd G
ate
Cur
rent
[mA
/µ
m] VDS=0.5V
VDS=50mV
VDS=0.5V
VDS=50mV
IDS
SchottkyIGATE
QWFET
Requires a gate stack to eliminateSchottky IGATE, e.g. high-K/metal-gate
Non Self-aligned Ohmic contacts
Schottky Barrier Metal
s.i. GaAs substrate for epitaxial growth
Remote DopingLayers
High electron mobility InSbquantum well
Higher band-gap matrix AlxIn1-xSb for
reduced junction leakage
metamorphic AlInSb buffer layer
Non Self-aligned Ohmic contacts
Schottky Barrier Metal
s.i. GaAs substrate for epitaxial growth
Remote DopingLayers
High electron mobility InSbquantum well
Higher band-gap matrix AlxIn1-xSb for
reduced junction leakage
metamorphic AlInSb buffer layer
Source: Intel & QinetiQ, ICSICT, Oct 2004
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IIIIII--V Nanoelectronics:V Nanoelectronics:HighHigh--K/MetalK/Metal--Gate Required to Improve IGate Required to Improve IONON/I/IOFFOFF
Due to SchottkyGate leakage
n-FET
• ION /IOFF ratio of InSb QWFET is limited by Schottky gate leakage
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One of the Grand Challenges in III-V Nanoelectronics for logic: Compatibility of III-V and High-K/Metal-gate Stack
III-V/High-K/metal-gate
High-K
High-K/metal-gateon III-V
Fast Surface States
2E-7
4E-7
6E-7
8E-7
1E-6
-1 -0.5 0 0.5 1VG [V]
CG [
F/cm
²]
on III-V
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SummaryHigh-K/metal-gate will be one of the key enablers for emerging non-Si nanoelectronic devices for future potential high-performance, low-power logic applications
High-K/metal-gate stacks are required for improving the Ion/Ioff ratio of III-V quantum-well transistors for future potential low-power, high-speed logic applications