RFIN 4 Match 15 RFOUT / VD NPA1008 Input GaN on Silicon ...cdn.macom.com/datasheets/NPA1008.pdf ·...
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GaN on Silicon Power Amplifier 20 - 2700 MHz, 28 V, 5 W
Rev. V4
NPA1008
1 1
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DC-0007593
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Features
GaN on Si HEMT D-Mode Integrated Amplifier
Suitable for Linear & Saturated Applications
Broadband Operation from 20 - 2700 MHz
50 Ω Input Matched
28 V Operation
45% Drain Efficiency
100% RF Tested
Lead-Free 4 mm 24-lead PQFN Package
Halogen-Free “Green” Mold Compound
RoHS* Compliant
Description
The NPA1008 is an integrated GaN on silicon power amplifier optimized for 20 - 2700 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 5 W (37 dBm) assembled in a lead-free 4 x 4 mm 24-lead QFN plastic package. The NPA1008 is ideally suited for general purpose narrowband to broadband applications in test and measurement, defense communications, land mobile radio and wireless infrastructure.
Ordering Information
Part Number Package
NPA1008 Bulk Quantity
NPA1008-SMB Sample Board
Functional Schematic
Pin Designations
1. All no connection pins may be left floating or grounded. 2. The exposed pad centered on the package bottom must be
connected to RF and DC ground. This path must also provide a low thermal resistance heat path.
Pin # Pin Name Function
1 VG Gate - DC Bias
2 N/C1 No Connection
3,4 RFIN RF Input
5-14 N/C1 No Connection
15,16 RFOUT / VD RF Output / Drain
17-24 N/C1 No Connection
25 Paddle2 Ground / Source
VG
Input
Match
RFIN
RFIN
N/C
N/C
N/C
121110987
6
5
4
3
2
1 N/C
RFOUT / VD
RFOUT / VD
N/C
N/C
N/C
13
14
15
16
17
18
N/C N/C N/C N/C N/C N/C
192021222324
N/C N/C N/C N/C N/C N/C
25
Paddle
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
GaN on Silicon Power Amplifier 20 - 2700 MHz, 28 V, 5 W
Rev. V4
NPA1008
2 2
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For further information and support please visit: https://www.macom.com/support
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DC Electrical Specifications: TC = 25°C
RF Electrical Specifications: TC = 25°C , VDS = 28 V, IDQ = 88 mA
Parameter Test Conditions Symbol Min. Typ. Max. Units
Drain-Source Leakage Current VGS = -8 V, VDS = 100 V IDLK - 4 - mA
Gate-Source Leakage Current VGS = -8 V, VDS = 0 V IGLK - 2 - mA
Gate Threshold Voltage VDS = 28 V, ID = 4 mA VT -2.5 -1.5 -0.5 V
Gate Quiescent Voltage VDS = 28 V, ID = 88 mA VGSQ -2.1 -1.2 -0.3 V
On Resistance VDS = 2 V, ID = 45 mA RON - 1.2 - Ω
Saturated Drain Current VDS = 7 V pulsed, pulse width 300 µs ID(SAT) - 2.3 - A
Parameter Test Conditions Symbol Min. Typ. Max. Units
Small Signal Gain CW, 1900 MHz GSS - 15.6 - dB
Gain CW, POUT = 37 dBm, 1900 MHz GP 10.5 12.0 - dB
Saturated Output Power CW, 1900 MHz PSAT - 38.9 - dBm
Drain Efficiency CW, 1900 MHz ηSAT 44 47.0 - %
Power Added Efficiency CW, POUT = 37 dBm, 1900 MHz PAE - 44.7 - %
Ruggedness All phase angles VSWR = 15:1, No Device Damage
GaN on Silicon Power Amplifier 20 - 2700 MHz, 28 V, 5 W
Rev. V4
NPA1008
3 3
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For further information and support please visit: https://www.macom.com/support
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Absolute Maximum Ratings3,4,5
3. Exceeding any one or combination of these limits may cause permanent damage to this device. 4. MACOM does not recommend sustained operation near these survivability limits. 5. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours.
Handling Procedures
Please observe the following precautions to avoid damage:
Static Sensitivity
Gallium Nitride Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM Class 1B devices.
Parameter Absolute Maximum
Drain Source Voltage, VDS 100 V
Gate Source Voltage, VGS -10 to 3 V
Gate Current, IG 12 mA
Junction Temperature, TJ +200°C
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C
ESD Min. - Human Body Model (HBM) +350 V
6. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple embedded in heat-sink.
7. The thermal resistance of the mounting configuration must be added to the device ӨJC , for proper TJ calculation during operation. The recommended via pattern, shown on page 4, on a 20 mil thick, 1 oz plated copper, PCB adds an additional 4 °C/W to the typical value.
Parameter Test Conditions Symbol Typical Units
Thermal Resistance VDS = 28 V, TJ =200°C ӨJC 12.1 °C/W
Thermal Characteristics6,7
GaN on Silicon Power Amplifier 20 - 2700 MHz, 28 V, 5 W
Rev. V4
NPA1008
4 4
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Description Parts measured on evaluation board (20-mil thick RO4350). The PCB’s electrical and thermal ground is provided using a standard-plated densely packed via hole array (see recommended via pattern). Matching is provided using a combination of lumped elements and transmission lines as shown in the simplified schematic above. Recommended tuning solution component placement, transmission lines, and details are shown on the next page.
Bias Sequencing Turning the device ON
1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (28 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS.
Recommended Via Pattern (All dimensions shown as inches)
Evaluation Board and Recommended Tuning Solution
20 - 2700 MHz Broadband Circuit
C3
10 mF
VGS
NPA1008
C2
2400 pFRF
OutC1
2400 pF
RF
In
R1
470 W
L4
1.5 nH
L3
2.2 nH
C8
0.6 pF
VDS
C4
4.7 mF
L2
0.9 mH
C6
0.8 pF
C5
0.6 pF
C7
0.5 pF
C9
1000 pF
L1
0.9 mH
GaN on Silicon Power Amplifier 20 - 2700 MHz, 28 V, 5 W
Rev. V4
NPA1008
5 5
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Reference Value Tolerance Manufacturer Part Number
C1, C2 2400 pF - Dielectric Labs, Inc. C08BL242X-5UN-X0
C3 10 µF 10% TDK C2012XR1C106M085AC
C4 4.7 µF 10% TDK C5750X7R2A475K230KA
C5, C8 0.6 pF 0.1 pF ATC 800A0R6BT250X
C6 0.8 pF 0.1 pF ATC 800A0R8BT250X
C7 0.5 pF 0.1 pF ATC 800A0R5BT250X
C9 1000 pF 10% Kemet C0805C102K1RACTU
R1 470 Ω 10% Panasonic ERJ-P03F4700V
L1, L2 0.9 µH 10% Coilcraft 1008AF-901XJLC
L3 2.2 nH ±0.2 nH AVX L08052R2CEW
L4 1.5 nH ±0.2 nH AVX L06031R5CGS
PCB Rogers RO4350, r=3.5, 0.020”
Parts list
Evaluation Board and Recommended Tuning Solution
20 - 2700 MHz Broadband Circuit
RFIN RFOUT
VGS VDS
GaN on Silicon Power Amplifier 20 - 2700 MHz, 28 V, 5 W
Rev. V4
NPA1008
6 6
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.
For further information and support please visit: https://www.macom.com/support
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Device s-parameters (Deembedded)
Performance vs. Input Return Loss at POUT = 37 dBm
Broadband Circuit s-Parameters
Performance vs. Frequency at POUT = 37 dBm
Typical Performance as measured in the Broadband Evaluation Board: CW, VDS = 28 V, IDQ = 88 mA, TC = 25°C (unless noted)
0
5
10
15
20
25
-25
-20
-15
-10
-5
0
0 0.5 1 1.5 2 2.5 3
Gain
IRL
Gain
(dB
)
Input R
etu
rn L
oss (d
B)
Frequency (GHz)
10
11
12
13
14
15
20
30
40
50
60
70
0 0.5 1 1.5 2 2.5 3
Gain
PAE
Gain
(dB
)
Pow
er A
dded E
fficie
ncy (%
)
Frequency (GHz)
0
5
10
15
20
-20
-15
-10
-5
0
0 0.5 1 1.5 2 2.5 3
S21
S11
S22
s2
1 (
dB
)
s1
1 , s2
2 (dB
)
Frequency (GHz)
0
5
10
15
20
-20
-15
-10
-5
0
0 0.5 1 1.5 2 2.5 3
S21
S11
S22
s2
1 (
dB
)
s1
1 , s2
2 (dB
)
Frequency (GHz)
GaN on Silicon Power Amplifier 20 - 2700 MHz, 28 V, 5 W
Rev. V4
NPA1008
7 7
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.
For further information and support please visit: https://www.macom.com/support
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Input Return Loss vs. Frequency Input Return Loss at POUT = 37 dBm vs. Frequency
Gain vs. Frequency at POUT = 37 dBm
Power Added Efficiency at POUT = 37 dBm vs. Frequency
Gain vs. Frequency
Power Added Efficiency vs. Frequency
Typical Performance as measured in the Broadband Evaluation Board: CW, VDS = 28 V, IDQ = 88 mA, TC = 25°C (unless noted)
10
11
12
13
14
15
16
17
0 0.5 1 1.5 2 2.5 3
POUT = 24dBm
POUT = 36dBm
POUT = 37dBm
Gain
(d
B)
Frequency (GHz)
-20
-18
-16
-14
-12
-10
-8
-6
0 0.5 1 1.5 2 2.5 3
POUT = 24dBm
POUT = 36dBm
POUT = 37dBm
Inpu
t R
etu
rn L
oss (
dB
)
Frequency (GHz)
0
10
20
30
40
50
60
0 0.5 1 1.5 2 2.5 3
POUT = 24dBm
POUT = 36dBm
POUT = 37dBm
Po
wer
Ad
de
d E
ffic
ien
cy (
%)
Frequency (GHz)
8
9
10
11
12
13
14
15
16
0 0.5 1 1.5 2 2.5 3
-40°C
+25°C
+85°C
Gain
(dB
)Frequency (GHz)
-16
-14
-12
-10
-8
-6
0 0.5 1 1.5 2 2.5 3
-40°C
+25°C
+85°C
Input R
etu
rn L
oss (
dB
)
Frequency (GHz)
30
35
40
45
50
55
60
0 0.5 1 1.5 2 2.5 3
-40°C
+25°C
+85°C
Po
wer
Ad
de
d E
ffic
ien
cy (
%)
Frequency (GHz)
GaN on Silicon Power Amplifier 20 - 2700 MHz, 28 V, 5 W
Rev. V4
NPA1008
8 8
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.
For further information and support please visit: https://www.macom.com/support
DC-0007593
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Gain vs. POUT
Input Return Loss vs. POUT
Typical Performance as measured in the Broadband Evaluation Board: CW, VDS = 28 V, IDQ = 88 mA, TC = 25°C (unless noted)
Power Added Efficiency vs. POUT
Gain vs. POUT
8.0
10
12
14
16
18
20 25 30 35 40
1500MHz
1900MHz
2400MHz
2700MHz
Gain
(dB
)P
OUT (dBm)
Input Return Loss vs. POUT
Power Added Efficiency vs. POUT
0
10
20
30
40
50
60
70
80
10 15 20 25 30 35 40 45
100MHz
500MHz
900MHz
Pow
er
Added
Eff
icie
ncy (
%)
POUT
(dBm)
8
10
12
14
16
18
20 25 30 35 40
100MHz
500MHz
900MHz
Gain
(dB
)
POUT
(dBm)
0
10
20
30
40
50
60
20 25 30 35 40
1500MHz
1900MHz
2400MHz
2700MHz
Pow
er
Added
Eff
icie
ncy (
%)
POUT
(dBm)
-20
-18
-16
-14
-12
-10
-8
20 25 30 35 40
100MHz
500MHz
900MHzInput
Retu
rn L
oss (
dB
)
POUT
(dBm)
-20
-18
-16
-14
-12
-10
-8
20 25 30 35 40
1500MHz
1900MHz
2400MHz
2700MHz
Input
Retu
rn L
oss (
dB
)
POUT
(dBm)
GaN on Silicon Power Amplifier 20 - 2700 MHz, 28 V, 5 W
Rev. V4
NPA1008
9 9
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.
For further information and support please visit: https://www.macom.com/support
DC-0007593
9
2-Tone IMD vs. Output Power vs. IDQ
2-Tone IMD vs. Output Power
2-Tone Gain vs. Output Power vs. IDQ
2-Tone IMD vs. Tone Spacing (POUT = 37 dBm-PEP)
Typical 2-Tone Performance as measured in the Broadband Evaluation Board 1 MHz Tone Spacing, Freq = 1900 MHz, VDS = 28 V, IDQ = 88 mA, TC = 25°C (unless noted)
-50
-45
-40
-35
-30
-25
-20
-15
-10
0.1 1 10 100
-IMD3
+IMD3
-IMD5
+IMD5
-IMD7
+IMD7
IMD
(d
Bc)
Tone Spacing (MHz)
-60
-50
-40
-30
-20
-10
0.01 0.1 1 10
-IMD3
+IMD3
-IMD5
+IMD5
-IMD7
+IMD7
IMD
(d
Bc)
POUT
(W-PEP)
10
-50
-45
-40
-35
-30
-25
-20
-15
0.01 0.1 1 10
48mA
68mA
88mA
108mA
128mA
IMD
3 (
dB
c)
POUT
(W-PEP)
10
11
12
13
14
15
16
17
0.01 0.1 1 10
48mA
68mA
88mA
108mA
128mA
Gain
(dB
)P
OUT (W-PEP)
Quiescent VGS vs. Temperature
-1.5
-1.4
-1.3
-1.2
-1.1
-1.0
-0.90
-0.80
-0.70
-50 -25 0 25 50 75 100
48mA
88mA
148mA
VG
SQ (
V)
Temperature (oC)
GaN on Silicon Power Amplifier 20 - 2700 MHz, 28 V, 5 W
Rev. V4
NPA1008
10 10
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.
For further information and support please visit: https://www.macom.com/support
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Lead-Free 4 mm 24-Lead QFN Plastic Package†
† Meets JEDEC moisture sensitivity level 3 requirements. Plating is Matte Tin.
All dimensions shown as inches [millimeters]
GaN on Silicon Power Amplifier 20 - 2700 MHz, 28 V, 5 W
Rev. V4
NPA1008
11 11
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.
For further information and support please visit: https://www.macom.com/support
DC-0007593
11
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