RF Power Field Effect Transistor Array - NXP Semiconductors · 2016. 11. 23. · DS1 R1 Z3 Z4 Z5 C8...

Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable.The PFP-16 package has had lead-free terminations from its initial release.

MRF9002R2

1RF Device DataFreescale Semiconductor

RF Power Field Effect Transistor ArrayN-Channel Enhancement-Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequen-cies to 1000 MHz. The high gain and broadband performance of this devicemake it ideal for large-signal, common-source amplifier applications in 26 voltbase station equipment. The device is in a PFP-16 Power Flat Pack packagewhich gives excellent thermal performances through a solderable backsidecontact.

• Typical Performance at 960 MHz, 26 VoltsOutput Power 2 Watts Per TransistorPower Gain 18 dB Efficiency 50%

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage VDSS - 0.5, +65 Vdc

Gate-Source Voltage VGS - 0.5, +15 Vdc

Total Dissipation Per Transistor @ TC = 25°C PD 4 W

Storage Temperature Range Tstg - 65 to +150 °C

Operating Junction Temperature TJ 150 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value Unit

Thermal Resistance, Junction to Case, Single Transistor RθJC 12 °C/W

Table 3. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020 3 240 °C

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling andpackaging MOS devices should be observed.

Document Number: MRF9002R2Rev. 6, 7/2005

Freescale SemiconductorTechnical Data

MRF9002R2

1000 MHz, 2 W, 26 VLATERAL N-CHANNEL

BROADBANDRF POWER MOSFET

CASE 978-03PLASTICPFP-16

Figure 1. Pin Connections

16

15

14

13

12

11

10

1

2

3

4

5

6

7

8

(Top View)

9

N.C.

GATE1

N.C.

GATE2

N.C.

GATE3

N.C.

DRAIN 1−1

DRAIN 1−2

DRAIN 2−1

DRAIN 2−2

N.C.

DRAIN 3−1

DRAIN 3−2

N.C.

N.C.

Note: Exposed backside flag is sourceterminal for transistors.

16

1

Freescale Semiconductor, Inc., 2005. All rights reserved.

2RF Device Data

Freescale Semiconductor

MRF9002R2

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

On Characteristics

Gate Threshold Voltage(VDS = 10 Vdc, ID = 20 µAdc)

VGS(th) 2.4 4 Vdc

Gate Quiescent Voltage(VDS = 26 Vdc, ID = 25 mAdc)

VGS(Q) 3 5 Vdc

Drain-Source On-Voltage(VGS = 10 Vdc, ID = 0.1 Adc)

VDS(on) 0.3 Vdc

Functional Tests (Per Transistor in Freescale Test Fixture, 50 ohm system)

Common-Source Amplifier Power Gain @ P1dB(VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz)

Gps 15 18 dB

Drain Efficiency @ P1dB(VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz)

η 35 50 %

Input Return Loss @ P1dB(VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz)

IRL - 15 - 9 dB

Power Output, 1 dB Compression Point(VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz)

P1dB 34 37 dBm

Output Mismatch Stress(VDD = 26 Vdc, Pout = 2 W CW, IDQ = 25 mA, f = 960.0 MHz, VSWR = 10:1, All Phase Angles at Frequencyof Tests)

Ψ

No Degradation In Output Power

MRF9002R2


Figure 2. MRF9002R2 Broadband Test Circuit Schematic

RF1

OUTPUTZ1 Z2

VGS1

C3

C2

DUT

VDS1

Z3R1

Z4 Z5

C8

C4

C5

C1

L1L4

C6

C7

C16

C14

RF1

INPUT

RF2

OUTPUT

RF3

OUTPUT

RF2

INPUT

RF3

INPUT

VGS2VDS2

VGS3VDS3

L2L5

L3L6

R2

R3

Z6 Z7 Z8

Z9 Z10

C10C9

C18

C13

Z11 Z12 Z13

Z14 Z15

C12C11

C17

C15

+ +

++

++

Table 5. MRF9002R2 Broadband Test Circuit Component Designations and ValuesDesignators Description

C1-C6 33 pF Chip Capacitors (0805)

C7-C12 1.0 µF, 35 V Tantalum Capacitors, Kemet

C13 8.2 pF Chip Capacitor (0805)

C14, C15 10 pF Chip Capacitors (0805)

C16, C17 2.7 pF Chip Capacitors (0805)

C18 3.3 pF Chip Capacitor (0805)

L1-L6 12 nH Chip Inductors (0805)

R1-R3 0 Chip Resistors (0805)

Z1, Z11 1.16 x 28.5 mm Microstrip

Z2, Z7, Z12 0.65 x 5.6 mm Microstrip

Z3, Z8, Z13 0.65 x 2.6 mm Microstrip



Z6 1.16 x 12.9 mm Microstrip



PCB Etched Circuit Board

Raw PCB Material Rogers RO4350, 0.020″, 2.5″, x 2.5″, r = 3.5

Bedstead Copper Heatsink

4RF Device Data


MRF9002R2

Figure 3. MRF9002R2 Broadband Test Circuit Component Layout

Pin 1

MRF9002960 MHz

RF1 INPUT

Rev. B

RF1 OUTPUT

RF2 INPUTRF2 OUTPUT

VGS1

VGS2

VDS1

VDS2

C1 C2

C8C16

C7

C9 L4

C10

L5

C14

L1

L2

C3

R1

R2

C13

R3

C4C18

L3

C15L6

C11C17

C12

C5 C6

RF3 INPUT RF3 OUTPUT

VGS3 VDS3

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductorsignature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will haveno impact on form, fit or function of the current product.

MRF9002R2


TYPICAL CHARACTERISTICS

16

15

35

0

17

Gps

Pout

VDS = 26 Vdc

IDQ = 25 mA

f = 960 MHz

Single−Tone

Gps

, P

OW

ER

GA

IN (

dB)

33 19.25

31 19

29 18.75

27 18.5

25 18.25

23 18

21 17.75

19 17.5

17 17.25

19.5

2 4 6 8 10 12 14

985

25

41

925

10 dBm

VDS = 26 Vdc

IDQ = 25 mA

Single−Tone

Pou

t, O

UT

PU

T P

OW

ER

(dB

m)

39

37

35

33

31

29

27

975965955945935

15 dBm

Pin = 20 dBm

Pin, INPUT POWER (dBm)

Figure 4. Output Power and Power Gainversus Input Power

Pou

t, O

UT

PU

T P

OW

ER

(dB

m)

Pout, OUTPUT POWER (dBm)

Figure 5. Power Gain versus Output Power

Gps

, P

OW

ER

GA

IN (

dB)

30

19.9

20.3

22

−32

−28

Gps

IMD

Pout = 2 W (PEP)

IDQ = 25 mA

f1 = 960.0 MHz, f2 = 960.1 MHz

VDS, DRAIN SOURCE SUPPLY (VOLTS)

Figure 6. Power Gain and Intermodulation Distortionversus Supply Voltage

Gps

, P

OW

ER

GA

IN (

dB)

20.2 −29

20.1 −30

20 −31

29282726252423

INT

ER

MO

DU

LAT

ION

DIS

TO

RT

ION

(dB

c)IM

D,

40

−65

−20

5

25 mA

VDS = 26 Vdc

f1 = 960.0 MHz, f2 = 960.1 MHz

Pout, OUTPUT POWER (dBm) PEP

Figure 7. Intermodulation Distortion versusOutput Power

INT

ER

MO

DU

LAT

ION

DIS

TO

RT

ION

(dB

c)IM

D,

50 mA

75 mA

100 mA

−25

−30

−35

−40

−45

−50

−55

−60

353025201510

40

−70

0

10

3rd Order

VDS = 26 Vdc

f1 = 960.0 MHz, f2 = 960.1 MHz

Pout, OUTPUT POWER (dBm)

Figure 8. Intermodulation Distortion Productsversus Output Power

INT

ER

MO

DU

LAT

ION

DIS

TO

RT

ION

(dB

c)IM

D,

−10

−20

−30

−40

−50

−60

3530252015

5th Order

7th Order

f, FREQUENCY (MHz)

Figure 9. Output Power versus Frequency

40

15

23

10

100 mA

VDS = 26 Vdc

f = 960 MHz

Single−Tone

22

21

20

19

18

17

16

15 20 25 30 35

25 mA

75 mA

50 mA

6RF Device Data


MRF9002R2

TYPICAL CHARACTERISTICS

Crss

Ciss

30

2

12

22

VDS, DRAIN SOURCE SUPPLY (VOLTS)

Figure 10. Capacitance versus Drain Source Voltage

Coss

23 24 25 26 27 28 29

3

4

5

6

7

8

9

10

11

C,

CA

PA

CIT

AN

CE

(pF

)

MRF9002R2


Figure 11. Series Equivalent Source and Load Impedance

fMHz

ZsourceΩ

ZloadΩ

925

960

985

4.5 + j13.3

4.1 + j15.8

4.3 + j15.3

23.4 + j9.2

23.2 + j10.4

23.0 + j11.1

VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP

f = 925 MHz

Zo = 50 Ω

f = 925 MHz

985 MHz

985 MHz

fMHz

ZsourceΩ

ZloadΩ

925

960

985

6.0 + j12.3

5.8 + j16.5

5.9 + j14.3

19.7 + j27.8

22.0 + j23.9

22.5 + j25.4


fMHz

ZsourceΩ

ZloadΩ

925

960

985

4.3 + j12.2

3.9 + j15.9

4.3 + j14.0

23.1 + j6.5

22.8 + j8.4

22.6 + j9.3


Transistor 2

Transistor 3

Transistor 1

Zsource

Zload

f = 925 MHz

Zo = 50 Ω

f = 925 MHz

985 MHz

985 MHz

f = 925 MHz

985 MHz

Zsource

T 1

T 2

T 1

f = 925 MHz

985 MHz

Zload

T 2T 3

T 3

TRANSISTORS 1 and 2 TRANSISTOR 3

Zsource

Zload

Input

Matching

Network

Device

Under Test

Output

Matching

Network

Zsource = Test circuit impedance as measured from gate to ground.

Zload = Test circuit impedance as measured from drain to ground.

Zload

Zsource

8RF Device Data


MRF9002R2

NOTES

MRF9002R2


NOTES

10RF Device Data


MRF9002R2

NOTES

MRF9002R2


PACKAGE DIMENSIONS

CASE 978-03ISSUE C

DIM MIN MAX

MILLIMETERS

A 2.000 2.300

A1 0.025 0.100

A2 1.950 2.100

D 6.950 7.100

D1 4.372 5.180

E 8.850 9.150

E1 6.950 7.100

E2 4.372 5.180

L 0.466 0.720

L1 0.250 BSC

b 0.300 0.432

b1 0.300 0.375

c 0.180 0.279

c1 0.180 0.230

e 0.800 BSC

h −−− 0.600

0 7

aaa 0.200

bbb 0.200

ccc 0.100

NOTES:1. CONTROLLING DIMENSION: MILLIMETER.2. DIMENSIONS AND TOLERANCES PER ASME

Y14.5M, 1994.3. DATUM PLANE −H− IS LOCATED AT BOTTOM OF

LEAD AND IS COINCIDENT WITH THE LEADWHERE THE LEAD EXITS THE PLASTIC BODY ATTHE BOTTOM OF THE PARTING LINE.

4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLDPROTRUSION. ALLOWABLE PROTRUSION IS0.250 PER SIDE. DIMENSIONS D AND E1 DOINCLUDE MOLD MISMATCH AND AREDETERMINED AT DATUM PLANE −H−.

5. DIMENSION b DOES NOT INCLUDE DAMBARPROTRUSION. ALLOWABLE DAMBARPROTRUSION IS 0.127 TOTAL IN EXCESS OF THEb DIMENSION AT MAXIMUM MATERIALCONDITION.

6. DATUMS −A− AND −B− TO BE DETERMINED ATDATUM PLANE −H−.

BOTTOM VIEW

D1

E2

16

98

1

e/2

SBMbbb C

D

X 45

h

e14

x

E1

8X E

A2A

SEATING

PLANE

DATUM

PLANE

GAUGE

L1

PLANE

1.000

LW

W

0.039

A1

ccc C

DETAIL Y

SECT W-W

c c1

b1

b

ÇÇÇÇÇÇÉÉÉÉ

SAMaaa C

A

B

H

C

Y

PFP-16PLASTIC

12RF Device Data


MRF9002R2

Information in this document is provided solely to enable system and softwareimplementers to use Freescale Semiconductor products. There are no express orimplied copyright licenses granted hereunder to design or fabricate any integratedcircuits or integrated circuits based on the information in this document.

Freescale Semiconductor reserves the right to make changes without further notice toany products herein. Freescale Semiconductor makes no warranty, representation orguarantee regarding the suitability of its products for any particular purpose, nor doesFreescale Semiconductor assume any liability arising out of the application or use ofany product or circuit, and specifically disclaims any and all liability, including withoutlimitation consequential or incidental damages. Typical parameters that may beprovided in Freescale Semiconductor data sheets and/or specifications can and dovary in different applications and actual performance may vary over time. All operatingparameters, including Typicals, must be validated for each customer application bycustomers technical experts. Freescale Semiconductor does not convey any licenseunder its patent rights nor the rights of others. Freescale Semiconductor products arenot designed, intended, or authorized for use as components in systems intended forsurgical implant into the body, or other applications intended to support or sustain life,or for any other application in which the failure of the Freescale Semiconductor productcould create a situation where personal injury or death may occur. Should Buyerpurchase or use Freescale Semiconductor products for any such unintended orunauthorized application, Buyer shall indemnify and hold Freescale Semiconductorand its officers, employees, subsidiaries, affiliates, and distributors harmless against allclaims, costs, damages, and expenses, and reasonable attorney fees arising out of,directly or indirectly, any claim of personal injury or death associated with suchunintended or unauthorized use, even if such claim alleges that FreescaleSemiconductor was negligent regarding the design or manufacture of the part.

Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc.All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2005. All rights reserved.

How to Reach Us:

Home Page:www.freescale.com

E-mail:[email protected]

USA/Europe or Locations Not Listed:Freescale SemiconductorTechnical Information Center, CH3701300 N. Alma School RoadChandler, Arizona 85224+1-800-521-6274 or [email protected]

Europe, Middle East, and Africa:Freescale Halbleiter Deutschland GmbHTechnical Information CenterSchatzbogen 781829 Muenchen, Germany+44 1296 380 456 (English)+46 8 52200080 (English)+49 89 92103 559 (German)+33 1 69 35 48 48 (French)[email protected]

Japan:Freescale Semiconductor Japan Ltd.HeadquartersARCO Tower 15F1-8-1, Shimo-Meguro, Meguro-ku,Tokyo 153-0064Japan0120 191014 or +81 3 5437 [email protected]

Asia/Pacific:Freescale Semiconductor Hong Kong Ltd.Technical Information Center2 Dai King StreetTai Po Industrial EstateTai Po, N.T., Hong Kong+800 2666 [email protected]

For Literature Requests Only:Freescale Semiconductor Literature Distribution CenterP.O. Box 5405Denver, Colorado 802171-800-441-2447 or 303-675-2140Fax: [email protected]

Document Number: MRF9002R2Rev. 6, 7/2005

RXZB30

rohstext

RF Power Field Effect Transistor Array - NXP Semiconductors · 2016. 11. 23. · DS1 R1 Z3 Z4 Z5 C8...

Documents

Transcript of RF Power Field Effect Transistor Array - NXP Semiconductors · 2016. 11. 23. · DS1 R1 Z3 Z4 Z5 C8...