RF Plasma souRces

Riber offers the largest range of RF sources on the market.

RF source models cover the needs from research to

production machines. Different materials for the discharge

cavity are available to configure the source for the

generation of atomic nitrogen, oxygen or hydrogen.

RF sources are used for a wide range of applications such

as nitrides (GaInAlN,etc.), diluted nitride (GaInAsN, II-VI

doping), oxides (ZnO, spintronics, high-K, etc.), diluted

oxides (doping, mixed nitride / oxide) and in-situ hydrogen

surface cleaning.

The Riber RF source uses 13.56 mHz high brightness

plasma to produce an atomic species beam from a gas.

an innovative RF cavity/coil coupling is used to obtain

the highest atomic species production efficiency on

the market for RF plasma sources. The design allows the

cavity to be maintained at a high temperature to minimize

unwanted energy ion extraction. An innovative LC circuit

makes tuning easier than ever before.

Active atoms are injected into the growth chamber

through a series of small holes at the end of RF cavity.

The number of holes can be optimized for particular

applications. For example a small N atom flux is easily

achieved for GaAsN growth by adding a low flux

diaphragm. The resulting flux density permits (for example)

the growth of GaN at rates in exceeding several µm per

hour. The RF source atom fluxes are higher than 5 . 1015

atoms/cm²/s for10 cm working distance.

n largest range of models : from research to production

n High atomic species production

n Perfect for spintronics and high-k gate for continuous moore’s law

n Perfect for mgZno and related oxides : future electronics

n Perfect for GaN based leD and Power amplifiers

n amazing GaN growth rate achieved with RF-N 50/63 up to 2.5µm/h

n optical detector directly attached to inspection viewport

n for an excellent control of the growth rate

RF 50/63

s P e c I F I c a T I o N s

cHaRacTeRIsTIcs s40 RF X 450 s63 RF X 600 s63 RF 50-63 s100 RF X 50-100

Plasma Generated by Radio Frequency Wave

Cavity PBN (N2 / H2) or Synthetic Quartz (O2 / H2)

Type One piece Open with removable diffuser

RF tuning unit Manual or Automatic

Mounting flange CF 40 CF 63 CF 63 CF 100

WaTeR / Gas / elecTRIcal

Max - RF Power 450 W 600 W 600 W 600 W

RF Generator 13.56 Mhz / 600 W

RF Input connector Female N Type

Gas Inlet DN 16 CF / VCR 1/4" F

Manual Leak valve Included

Water Connection Swagelok Ø6 mm

RF Coil Cooling DP > 2 bar / 0.3 l/min

RF Tuning unit Cooling Air

Water Security Switch Yes

Pneumatic Connection* N.A. Ø4 mm tube fitting N.A. N.A.

oPTIoNs

Gas Purifier Panel O2 / H2 / N2

Integrated ShutterN.A.

Nipple Shutter

N.A. : Non applicable

R e s u l T s

Photo luminescence of GaN on al2o3 obtained with the RF-N-600 on a compact 21 Riber system.

The growth is performed at 780°C with a Nitrogen flow rate

of 0.65 sccm of nitrogen achieving a deposition rate

of 0.4µm/h. PL Line width of 4meV is obtained.

Working conditions of the RF50/63 on a c21 machine.

Both the RF power and the flow rate of nitrogen influence the GaN

deposition rate. The OED light intensity is directly correlated with

the GaN deposition rate.

R e s u l T s

3 µm x 3 µm aFm images of the uID.

Highest growth rates ever achieved

Amazing GaN growth rate achieved, up to 2.5 µm/h with superb

crystalline quality using Riber RFN-50/63. With the courtesy of B.

McSkimming and J. Speck, UCSB (USA).

Growth rate map demonstrating the growth rate’s dependence

on plasma source power and N2 flow rate. Maximum growth rate

achieved was ~7.6 µm/h for plasma conditions of 600 W, 25 sccm

All samples were grown with

plasma conditions of 500 W

and with N2 flow rate of 15 sccm

corresponding to a growth rate

of ~5.5 µm/h. The average RMS

is of the order of 1 nm.

With the courtesy of B. McSkimming and J. Speck, UCSB (USA).

set of RF power and nitrogen flow parameters for a fixed value of optical sensor output u

control the deposition rate with oeD

The data presented were achieved by Dr. Z.R Zytkiewicz

and his coworkers. Institute of Physics, Polish Academy of

sciences, Poland.

Set of RF power and nitrogen flow parameters for a fixed value of

optical sensor output U

The data presented were achieved by Dr. Z.R Zytkiewicz and his coworkers.

Institute of Physics, Polish Academy of sciences, Poland.

Control the deposition rate with OED

c o N N e c T I o N

a u T o m a T I c m a T c H I N G b o X

2

43

1

5

Mass flow3

Gas Panel2

1 Isolation valve

Purifier5

4 Purifier panel

GUN MATCHING BOX GAS LINE ACCESSORIES

n Controller unit & AIM network

are connected with single cable

n An embedded RS232-C interface

can be extended by a RS422/485 expansion unit

n Paddle is provided to give a convenience

control

matching box

aIm

oeD

n Automatically match impedance

of plasma source with a 600 watts RF generator

Equipped with 2 modules systems :

n Compact air-cooled PI-type matching network

(Connected directly the RIBER RF source)

n External controller unit

(PLC fitted on a rugged interconnection box)

n The AIM can be adapted

on any RIBER RF plasma source

s o u R c e s e l e c T I o N G u I D e

FoR THe oRDeRING INFoRmaTIoN, Please coNTacT RIbeR

sysTems souRce moDel s40 RF-X-450 s63 RF-X-600 s63 RFX 50/63 s100 RFX 50/100

RIbeR

MBE 32

Compact 12

Compact 21

EPINEAT

MBE 412

MBE 49

MBE 6000

MBE 7000

Veeco / VaRIaN

GEN II

MOD GEN II

GEN 930

GEN 200

GEN 2000

VG

V80

V90

V100

V150

oTHeR sysTemsRiber sources are also available for use on systems from Eiko, Anelva, Ulvac, SVTA and DCA, as well as custom chambers. Contact Riber for details.

RECOMMENDED

CONTACT RIBER FOR MORE DETAILS

INAPPROPRIATE

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T e c H N o l o G I c a l l e a D e R s H I P

W o R l D W I D e P R e s e N c e

RIBER - 31, rue Casimir Périer, B.P 70083, 95873 Bezons, France Tel: +33 (0)1 39 96 65 00 - Fax: +33 (0)1 39 47 45 62 - email:info@riber.com – Internet: www.riber.com

F o r m o re i n fo r m a t i o n :

Tel: +33 (0)1 39 96 65 00

E m a i l : i n fo @ r i b e r. c o m

Internet: www.r iber.com

Riber is the world leading supplier of MBE processing equipment and related services.

In total, 850 of our MBE systems have been installed with at least one system in each

of the 35 countries with which MBE is involved. This represents 75% of the global market.

Capitalizing on more than 30 years of experience, the company’s core philosophy

is to design systems in close association with customers. Riber has invented and designed

major features which are now found in all MBE systems.

Riber plays a key role in the development of MBE technology, providing customers

with solutions from equipment to epitaxial growth.

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