Advantages of Three-Phase Rectifiers over Single-Phase Rectifiers
Rectifiers - compel.ru · Rectifiers August 2013 . Blank series ST’s rectifiers portfolio 2 15mA...
Transcript of Rectifiers - compel.ru · Rectifiers August 2013 . Blank series ST’s rectifiers portfolio 2 15mA...
Rectifiers
August 2013
Blank series
ST’s rectifiers portfolio 2
2x120A 15mA 15V
150V
100V
40/45V
30V
From 200 V to 1200 V
From 1 A to 200 A
STPSxx STTHxx
600V / 650V
200V
80V
High-performance
Low QRR
Low VF
Tandem
R series
L series
S series
LCD series
Mainstream
170V
60V
From wall adapters
1A to solar farms
200A
Avalanche-rated up
to 170V
120V
W series
Power Schottky
Signal Schottky Bipolar rectifiers
AC series
SiC diode current Gen. 2 voltage • Blank: single diode
• C: dual-diode with
common cathode
Package
STPSC bb H 065 bb bb
BATxx
Silicon Carbide (SiC) 650 V
4A, 6A, 8A, 10, 20A • STPSC4H065
• STPSC8H065
• STPSC10H065
• STPSC12H065
• STPSC20H065C
Silicon Carbide
www.st.com/diodes
Order code : SGDIODRECT0413
… and Our Drivers
Energy Saving
Space Savings
Environment
1 slide summary on Rectifiers 3
What: Our Edge Products
• Power Schottkys
• FERD: “the game changer”
• Super Power ISOTOP, TO3-P
• Gen 2Tandem 600V Hyperfast
• Gen 2 SiC 650V
Why: What is good
• Power Schottkys more power, more
robust
• Gen 2 SiC Highest peak power in SiC
• Gen 2 Tandem Like SiC at budget
• ISOTOP up to 200A for Welding
Help Needed?
www.st.com/diodes
Lighting
(CFL/LED)
Welding Solar
Automotive
UPS
Air Cond. SMPS
Where we are
Gen 2
Turbo2 TANDEM TANDEM
SiC
Lo
sse
s
attack “C”, “I”
“D” “V”
Selector Models System Boards
3
4
Low VF Reduced power losses and diode heats-up
High Tj to avoid thermal runaway phenomenon
Low IR as an evidence of Reliability and ruggness
Robust Inductive elements creates voltage spikes risk
Schottky Diodes advantages
Expanding LCD range in DPAK, up to 200V 5
TO-220FP
DPAK
TO-220
I²PAK
D²PAK
45
V
15 A
20 A
30 A
10 A
20 A
60
V
10 A
15 A
20 A
30 A
40 A
80
V
10 A
20 A
100
V
10 A
20 A
170
V
10 A
20 A
150
V
10 A
20 A
200
V
In mass production
In development
200V power Schottky diodes ext.
• Product range, all available
• High current: STPS60SM200CW
• Package: TO-247
• Output current: 2 x 30A
• Targeted applications: Telecom SMPS, welding equipments
• Medium current: STPS20200CT, STPS20200CTN, STPS20200CFP
• Packages: TO-220, TO-220NL, TO-220FPAB
• Output current: 2 x 10A
• Targeted applications: lighting, medium power SMPS
• Low current: STPS2200U, STPS2200UF, STPS2200AF
• Packages: SMB, SMB flat, SMA Flat
• Output current: 2A
• Targeted applications: lighting, DC/DC converters
6
7 New Welding devices series: “W series”
STTH Family (Ultrafast diodes)
Optimized
performance
Low price
Low Qrr
Low Vf
Tandem Series
« R » Series « L » Series
« S » Series
« LCD » Series « W » Series
For entry
level Welders
Part Numbers / New W series 8
STTH20W02CW
STTH200W03TV1
STTH60W03CW
STTH30W03CW
STTH60W02CW
STTH30W02CW
STTH61W04SW
STTH100W04CW
STTH200W04TV1
STTH50W06SW
STTH100W06CW
STTH200W06TV1
STTH50W03CW
Low VF Low QRR
High commutation perf
Multiple trade_offs
LCD series
L series R series
S series
Tandem series (600 V)
ST’600V Ultrafast diodes 9
AC series
STTHxxAC series target interleaved PFC in
air conditioning
600V diode
10
Requirements:
- Fast switch-off for CCM PFC
- Specific mechanical package for assy in « plastic frames »
Interleaved Boost
PFC
Tandem Generation 2
1 2
1
2
300 V diode 300 V diode
Two 300 V diodes in series make a faster 600 V diode.
TANDEMG2
STTH8T06DI (VF = 2.05V, QRR = 6nC) in mass-production
STTH8ST06DI (VF = 2.5V, QRR = 4nC) in mass-production
STTH12T06DI available for sampling in mass production
13
Tandem Generation 2
• Switching characteristics
IF=8A ; dI/dt=400A/µs ; VR=400V ; Tj=125°C
SiC G2: STPSC6H065D
Tandem G2: STTH8T06DI
Tandem G1: STTH806DTI
STTH8R06D
2A/div
10ns/div
New tandem G2
Up to 45% gain on QRR vs. tandem G1 !
TANDEM G2
14
Reverse recovery
comparison
Reverse recovery comparison
VR = 400 V, IF = 8 A, Tj = 125oC,dl/dt = -200 A/µs
Power loss comparison
400 W PFC, dI/dt = -200 A/µs, Tj = 125oC
W
0
1
2
3
4
5
6
7
Turbo2
“R”
TANDEM
G1
ST
SiC
Turbo 2, Tandem, SiC perf positioning
TANDEM
G2
Tandem G2
ST SiC
Tandem G1
STTH806DTI Silicon
ultrafast
15
600V / 650V SiC diodes
• SiC G2 technology: using JBS (Junction-Barrier Schottky) structure
EPITAXY
METAL
P+
Current flow
in normal
conditions
Current flow
in surge
conditions
Polymide
Metal Termination
Epitaxy
IF
VF
The addition of P+ implantation in the
schottky structure creates P/N
junctions.The surge forward current
capability can be increased while
keeping TJ < TJ(MAX)
Schottky
behaviour
Bipolar
behaviour
25°C
225°C
Clamping effect
Bipolar behaviour
600V / 650V SiC diodes
• Goal of SiC G2:
• Improve surge capability (IFSM)
• Give more margin on reverse voltage (VRRM)
New 650V SiC G2, better Ifsm
• Datasheet:
18
Improved surge capability
IFSM = 10 x IF(AV)
New voltage rating for
higher reverse safety
margin
New 650V SiC G2 19
Time
0A
20A
40A
60A
5ms 10ms 15ms 20ms 25ms 30ms120°C
160°C
200°C
240°C
215°CTj other 650V SiC JBS techno
TjSTPSC6H065
175°C
1000W PFC start-up Pspice simulation
90V, 70kHz, Cout = 600µF, L = 270µH, Tc = 125°C
STPSC6H065D lower VF enables to significantly reduce
the junction temperature during surge test .
• SiC G2 range
• 4A, 6A, 8A, 10, 20A:
• STPSC4H065 (TO-220AC, DPAK)
• STPSC6H065 (TO-220AC, DPAK, D²PAK)
• STPSC8H065 (TO-220AC, DPAK, D²PAK)
• STPSC10H065 (TO-220AC, DPAK, D²PAK)
• STPSC12H065 (TO-220AC, D²PAK)
• STPSC20H065C (TO-247, TO-220AB)
• Part-numbering:
STPSC xx H 065 y z
SiC diode current Gen. 2 voltage • Blank: single diode
• C: dual-diode with
common cathode
Package
20 New 650V SiC G2
1200V SiC diodes
• Key features
• 1200V Schottky rectifier for step up converter
• Robust high voltage periphery
• Ultrafast switching independant on the temperature
• Main benefits
• Higher efficiency & reduction of heatsink size
• Easy paralleling
• IEC 61000-4-5 & ANSI C 6241 (6kV, 2Ω) compliance
• IEC 60664-1 & UL 840 (Pollution degree II, material group, 1400V) compliance
Parameter value
VRRM min 1200V
IF(AV) 6A
VF(6A,25°C) typ. 1.65V
Cj (300V,25°C) typ. 29pF
STPSC6H12B
Mass-production in beg of Q3 2013
25
1200V SiC diodes
Parameters Conditions Value Unit
VRRM 1200 V
IF_AV δ = 0.5, TC = 125 °C 6 A
IFSM Half sine wave, tP = 10ms , Tc = 25°C 36
A Square wave, tP = 10µs , Tc = 25°C Ab.Val 100
TJ Maximum operating junction temperature 175 °C
VF IF = 6A & TJ = 25°C Typ. 1.65 V
VF IF = 6A & TJ = 25°C Max. 1.9 V
VF IF = 6A & TJ = 150°C Typ. 2.2 V
IR VR = VRRM , TJ = 25°C Max. 400 µA
IR VR = VRRM , TJ = 150°C Max. 1.5 mA
Qcj VR = 800V Typ. 29 nC
CJ
VR = 0V , Tc = 25°C , F = 1MHz Typ. 330 pF
VR = 300V , Tc = 25°C , F = 1MHz Typ. 29 pF
Rth(j-c) DPAK , Junction to case Typ. 1.3 °C/W
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1200V SiC diodes
The DPAK HV
package is
system compliant
with the UL 840
or IEC 60664-1
until a Vrms=780V
for a pollution
degree 1
VV
peakVV
drms
ddrms
716
)( 2
Vd
Vin
t Vd
δ= 80%
800V
Extract of table 9.1 from UL840
A K
K A K
Compliant with pollution
degree 1 requirements
Application
example :
27
Field-Effect Rectifiers
• New family of rectifiers
• New patented technology from ST
• Main purpose: improve the efficiency of power-converters while not
impacting the thermal-margin in order to facilitate the design.
• Get a new price/performance positioning between Schottky and SR
28
Field-Effect Rectifiers
• Technology positioning
Whatever the techno, the lower the VRRM, the better the VF / IR trade-off
VF
IR
VRR
M1
VRRM2 >
VRRM1
Schottky structured diode VF / IR
Same barrier
different die size
FERD techno VF / IR
VF
IR
VRR
M1
VRRM2 >
VRRM1
Same die size
Taylored process
29
Field-Effect Rectifiers
In M/P
M/P in Q2 2013
30V
45V
60V
100V
FERD30M45C TO-220, D²PAK
FERD40M45C
TO-220, D²PAK
FERD40U45C
TO-220, D²PAK
FERD60U45C
TO-220, TO-247
FERD60M45C
TO-220, TO-247
FERD10U45 SMB flat e-pad
50V
FERD15S50 SMB flat e-pad
FERD8U60 SMB flat e-pad
FERD15S50 PowerFLAT 5 x 6
FERD30S50 PowerFLAT 5 x 6
8A 10A 30A 40A 60A 15A
In M/P
Samples Field-Effect Rectifiers
31
Field-Effect Rectifiers
10.0E-6
100.0E-6
1.0E-3
10.0E-3
100.0E-3
1.0E+0
25 50 75 100 125 150
IR(typ)(mA)
Tj(°C)
IR = f(Tj)
0
2
4
6
8
10
12
14
16
18
20
0.1 0.2 0.3 0.4 0.5
IF(A)
VF(typ)(V)
IF = f(VF), without bonding
STPS30L45C
FERD30M45C
STPS30L45C
FERD30M45C
Tj=125°C
Tj=25°C
72mA
15mA
The best of the two worlds:
VF lower than STPS “L” series for good efficiency
IR lower than STPS “H” series for good thermal margin and easy design
Example: FERD30M45CT
32
Field-Effect Rectifiers
• Datasheet benchmark examples
Parameter STPS3045CT STPS30L45CT FERD30M45CT
VFmax (15A, 25°C) 0.71 V 0.55 V 0.47 V
IRmax (VRRM,
125°C)
40 mA 200 mA 50 mA
RTH(j-c) 0.95 °C/W 0.85 °C/W 1.05 °C/W
Parameter STPS4045CT STPS41L45CT FERD40M45CT FERD40U45CT
VFmax (20A, 25°C) 0.76 V 0.53 V 0.48 V 0.47 V
IRmax (VRRM,
125°C)
40 mA 220 mA 50 mA 75 mA
RTH(j-c) 1.3 °C/W 0.8 °C/W TBD TBD
Parameter STPS6045CW (TO-247) STPS61L45CT FERD60M45CT FERD60U45CT
VFmax (30A, 25°C) 0.68 V 0.56 V 0.54 V 0.5 V
IRmax (VRRM,
125°C)
80 mA 400 mA 50 mA 75 mA
RTH(j-c) 0.55 °C/W 0.75 °C/W TBD TBD
The best of the two
worlds
33
Field-Effect Rectifiers
• Application benchmark
34
Field-Effect Rectifiers
• Application benchmark
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
30 40 50 60 70 80 90 100 110 120 130 140 150
P [ W ]
Tj [°C ]
FERD60U45CT − Typ
STPS40M60CT − Typ
• Temperature working point: 105°C measured on board for STPS40M60 at 150W
• Losses difference at 105°C: 1W
• Efficiency difference at 105°C: (1/150)×100=0.7%
A minimum of 0.7% efficiency
difference between
FERD60U45 & STPS40M60
is expected on this board.
1W Typical conduction +
reverse losses
comparison: Pout=150W
35
Field-Effect Rectifiers
• Application benchmark
87.0
87.5
88.0
88.5
89.0
89.5
90.0
50 70 90 110 130 150
Effi
cie
ncy
[%
]
Load [W]
FERD60U45C
FERD40U45C
FERD30M45C
STPS40M60C
Difference: 0.91% Difference: 0.79%
Efficiency performance: FERD60U45C > FERD40U45C > FERD30M45C > STPS40M60C
Efficiency
Measurement: Vout =
11V, Pout = [50W to
150W], Vin = 115Vac,
Tamb = 25°C
36
Field-Effect Rectifiers
• FER diodes for low-power chargers
Products: • 3A to 20A/45V Schottky & 8A to 30A
45V to 60V FERD
• SMD Flat packages, less than 1mm
Chargers Typical mapping:
Main applications: • DCM or QR flyback converters
Features: • Low VF
• Small form factor
• High forward surge capability
Benefits: • Help reaching high-efficiency standards
and high power density
Secondary rectification diode
current ratings
Chargers’ Output Power
SMB Flat
Exposed Pad
SMA Flat PowerFLATTM 6x5
5W 10W 12.5W
3A – 10A STPS3L45AF
FERD8U60UFE
FERD10U45UFE
10A to 15A FERD10U45FE
FERD15S50UFE
15A to 30A FERD15S50DJF
FERD30S50DJF
One output power and control charger, one diode
37
Field-Effect Rectifiers
• Energy Star 6.0 for smart phones chargers coming in Q3 2013 Efficiency
60%
70%
80%
90%
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4
Iout (A)
110V230V
Typical Efficiency = f(IOUT) on 10 W charger
100%
25%
50%
75%
Energy Star 5 min. average efficiency
Draft Energy Star 6 min. average efficiency
Energy savings standards such as Energy Star are pushing up
efficiency requirements on chargers
38
Field-Effect Rectifiers
• Low-power chargers: typical flyback topology
DC VOUT = 5V
D
IOUT = 1A
to 2.5A
DCM
QR control Variable Fsw
RCD /
transil+ Diode
Active clamp
Diode choice DCM Controler QR control with valley detection
RCD network Transil + diode RCD network Active clamp
Voltage rating 45V to 60V 45V to 50V 40V to 50V 40V to 45V
<5W output 3A to 10A diodes
<10W output Up to 2 x 10A diodes in parallel
12.5W output Up to 30A diode rating
39
Field-Effect Rectifiers
• Thermal considerations
A thermal pad can be used
on the diodes
Chargers are stuffy designs, where each component’s temperature influences other components.
Low profile packages enable power density increase and better convection cooling.
40
Field-Effect Rectifiers
• Thermal considerations
Tj2 Tj1
PD1 PD2
Tc
PD2*Rthc PD1*Rthc
Tamb
Rthca
Rthjc Rthjc
Diode
Mosfet
MOS-FET & Diode are thermally coupled:
Optimization of one of the device benefit to the other one
41
Field-Effect Rectifiers
• New technologies such as FERD bring significant improvements
compared to conventional Schottky-structured diodes.
• The use of flat packages (height < 1mm) becomes mandatory in the
chargers environment, to increase both power density, and the air
atmosphere surrounding the diode to improve convection cooling.
• An optimal choice of VRRM (as low as possible), I0, and package within
ST rectifiers gives designers the opportunity to comply with the most
stringent energy savings standards today applicable to smart phones
battery chargers.
42
Packages…
New TO-220 « narrow-leads » 44
1.2 0.65
1.25
0.3
Full insertion of the TO220 in the PCB possible,
To fit « low profile requirement”
1.7mm max
3.93mm
max
1.2mm max
2.9mm
max
Reduce the size of the lead-shoulders
Advantage
For adapters
New TO-220 « narrow-leads » 45
1.7mm max
3.93mm
max
1.2mm max
2.9mm
max
Complete insertion in the PCB
28 products in Mass-production (high runners in adapter business)
STPS40M120CTN STPS30L120CTN STPS20120CTN STPS30H100CTN STPS40M80CTN STPS30L60CTN
STPS40SM120CTN STPS30120CTN STPS40M100CTN STPS20SM100STN STPS30M80CTN STPS20L60CTN
STPS40120CTN STPS20M120STN STPS40SM100CTN STPS20H100CTN STPS40M60CTN STPS20LCD60CTN
STPS30M120STN STPS20SM120STN STPS30M100STN STPS20S100CTN STPS30M60STN
STPS30SM120STN STPS20L120CTN STPS30SM100STN STPS20LCD100CTN STPS30SM60STN
Focus on flat packages 46
PowerFLAT (6 x 5)
Low and medium power
High power
Footprint compatible with standard products
PowerFLAT (3.3 x 3.3)
Exposed PAD
ST flat packages less than 1mm height 47
New PowerFLAT™ 6 x 5 package 48
Current rating Voltage rating Part nbr 5x6x1
Po
we
r S
ch
ott
ky
15A 30V STPS15L30CDJFTR
30A 30V STPS30L30DJF-TR
30A 45V STPS3045DJF-TR
30A 60V STPS30M60DJF-TR
30A 100V STPS30M100DJF-TR
30A 100V STPS30H100DJF-TR
30A 120V STPS30120DJF-TR
30A 170V STPS30170DJF-TR
Ult
ra F
as
t 5A 600V STTH5R06DJF-TR
8A 300V STTH8R03DJF-TR
30A 200V STTH30R02DJF-TR
PowerFLATTM bring more current in high power density designs
Ultra-slim for ultra-
books
Solar µinverters
PowerFLAT™ 3.3 x 3.3 49
PowerFLAT 3.3 x 3.3
Current rating Voltage rating Part nbr 3.3²x1
5 30 STPS5L30CDEE
6 100 STPS6M100DEE
8 100 STPS8H100DEE
5 400 STTH5L04DEE
4 600 STTH4R06DEE
10 100 STPS10M100DEE
8 170 STPS8170DEE
10 45 STPS1045DEE
SMB flat with exposed-pad
Thickness: 1mm
Improved RTH(j-c)
thanks to exposed-
pad
Possibility to increase
the power density
thanks to a better
thermal dissipation
50
SMB Flat exposed Pad 51
For high power density applications
SMB flat with exposed-pad
ST’s SMB fLat exposed pad Competition
Smaller package (but fully footprint
compatible) than competitors.
52
STPS3L45AF 53
3A, 45V, SMA flat package
SMD flat packages 54
PART NUMBER FORWARD
CURRENT
REVERSE
VOLTAGE PACKAGE
STPS120MF 1 20 STMite Flat
STPS1H100MF 1 100 STMite Flat
STPS1L20MF 1 20 STMite Flat
STPS1L30MF 1 30 STMite Flat
STPS1L40MF 1 40 STMite Flat
STPS1L60MF 1 60 STMite Flat
STPS1H100AF 1 100 SMA Flat
STPS2150AF 2 150 SMA Flat
STPS2L30AF 2 30 SMA Flat
STPS2L40AF 2 40 SMA Flat
STPS2H100UF 2 100 SMB Flat
STPS2L25UF 2 25 SMB Flat
STPS2L30UF 2 30 SMB Flat
STPS2L40UF 2 40 SMB Flat
STPS2L60UF 2 60 SMB Flat
STPS3L45AF 3 45 SMA Flat in dev
STPS3150UF 3 150 SMB Flat
STPS3L40UF 3 40 SMB Flat
STPS3L60UF 3 60 SMB Flat
All in mass-
production,
3A/45V SMA flat
in development
Rectifier
New techno: FERD
processes
New substrate:
SiC
New ideas:
Tandem diodes,
Welding, air
conditioning PFC
New packages:
PowerFLAT, SMB Flat,
TO3PF
Conclusion 55