R&D of IR detectors and Emitters · Title: R&D of IR detectors and Emitters Author: ��...

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L a b Quantum Nano Engineering Lab 4/3/2016 0 Quantum Nano - Engineering Lab Dipole moment

Transcript of R&D of IR detectors and Emitters · Title: R&D of IR detectors and Emitters Author: ��...

Page 1: R&D of IR detectors and Emitters · Title: R&D of IR detectors and Emitters Author: �� � � � � � Created Date: 4/3/2016 1:24:00 PM

L a b Quantum Nano Engineering Lab 4/3/20160 Quantum Nano-Engineering Lab

Dipole moment

Page 2: R&D of IR detectors and Emitters · Title: R&D of IR detectors and Emitters Author: �� � � � � � Created Date: 4/3/2016 1:24:00 PM

L a b Quantum Nano Engineering Lab 4/3/20161

Our Goal for VIS/IR Detectors

• Simple to produce - Wet chemistry

• Flexible – Controlled by wavelength/substrate

• Cheep –Organic molecules/NCs/detector

Page 3: R&D of IR detectors and Emitters · Title: R&D of IR detectors and Emitters Author: �� � � � � � Created Date: 4/3/2016 1:24:00 PM

L a b Quantum Nano Engineering Lab 4/3/20162

Infrared Applications

SWIR MWIR LWIR

InSb

InAsSb

Nano-dots: PbSe, HgCdTe

Nano

Crystals

Quantum wells HgCdTe

Atmospheric windows

Mobile phones (simple IR camera)Medical

Low end Infra-red detectors

1.7-2.5 µm 3-5 µm

Page 4: R&D of IR detectors and Emitters · Title: R&D of IR detectors and Emitters Author: �� � � � � � Created Date: 4/3/2016 1:24:00 PM

L a b Quantum Nano Engineering Lab 4/3/20163

Existing IR Detectors

Interband transitions in PN junctions

Deeply cooled - heavy

Sophisticated layer structure

Intra-band transitions n-doped wells

Cooled

Expensive

3-5 microns, 8-12 microns

Quantum-Well IR Photodetectors

Bolometers

Uncooled

Expensive

Specific range of wavelengths

(VOx, amorphous Si)

Page 6: R&D of IR detectors and Emitters · Title: R&D of IR detectors and Emitters Author: �� � � � � � Created Date: 4/3/2016 1:24:00 PM

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GaAs

GaAs semi-insulating substrate

5nm

50nm

AlGaAs semi-insulating

Aun-GaAs

+

_

+++++ +

_ _ _ _ _ _

1064

intensity 500

1

100bias

nm

mW

beamdiameter cm

V mV

Device schematics: SAM linked gate

Charge transfer

through the organic

monolayer.

The trapped

charge effects the

channel and

changes the

conductivity.

Page 7: R&D of IR detectors and Emitters · Title: R&D of IR detectors and Emitters Author: �� � � � � � Created Date: 4/3/2016 1:24:00 PM

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FET transistor with nanodots

acting as a light gate

1000 1250 15000.00

0.05

0.10

Sample with NP

Reference

Re

sp

on

se

[A

/W]

Wavelength [nm]

Solution absorption Ab

so

rptio

n [

a.u

]

Appl. Phys. Lett. 92 223112 (2008).

High Sensitivity to Light

Highly sensitive detector:

photoresponsivity of

A. Neubauer, S. Yochelis, Y. Amit, U. Banin, Y. Paltiel,

Sensors & Actuators A: Physical, 229, 15, 166-171 (2015)

610V

W

1E-13 1E-10 1E-710

5

106

R

esp

on

siv

ity [

V/W

]

Light intesity [W/cm^2]

(a)

InAs QDs

Page 8: R&D of IR detectors and Emitters · Title: R&D of IR detectors and Emitters Author: �� � � � � � Created Date: 4/3/2016 1:24:00 PM

L a b Quantum Nano Engineering Lab 4/3/20167

System II: Printed Detectors

QD

Light

-

+

In collaboration with Prof. Shlomo Magdassi, HUJI

Tunable inkjet printed hybrid carbon

nanotubes/nanocrystals light sensor

E. Katzir, S. Yochelis, Y. Paltiel, S. Azoubel, A. Shimoni, S.

Magdassi, Sensors and Actuators B, 196, 112–116 (2014)

1) Light is absorbed in multiwall

carbon nano tubes (MWCNT)

and nano crystals (NCs).

2) The light that is absorbed by the

NCs changes the conduction of

the channel by induced dipole.

Page 9: R&D of IR detectors and Emitters · Title: R&D of IR detectors and Emitters Author: �� � � � � � Created Date: 4/3/2016 1:24:00 PM

L a b Quantum Nano Engineering Lab 4/3/20168

Estimated costsThere is a need for simple 1.7 – 2.5µm

3-5µm room temperature arrays

• Doped nano particles for 100% absorption efficiency 1-10

$/m2.

• Printed sensor gold 1000$ for A4 sheet.

• Carbon NT 50$ per A4 sheet.

• Printed FET like detectors 1 $/m2.

• Estimated final cost per array few $.

Page 10: R&D of IR detectors and Emitters · Title: R&D of IR detectors and Emitters Author: �� � � � � � Created Date: 4/3/2016 1:24:00 PM

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Summary

• Controlled wavelength VIS to MWIR

• Simple to produce

• Flexile substrates

• Cheap

0 50 1000

10

20

30

40

520nm highpass filter

290K

1mA

Response [m

V/W

]

Time [ms]

100nm