RCAS, Academia Sinica Shih-Yen Lin ( 林時彥 )
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Transcript of RCAS, Academia Sinica Shih-Yen Lin ( 林時彥 )
RCAS, Academia SinicaShih-Yen Lin ( 林時彥 )
Optoelectrical Devices with Nano-Structures Optoelectrical Devices with Nano-Structures
Experiment Systems (Since 2006.10)
Device Processing Line
10-300 K IR DetectorMeasurement System
10-300 K PL/PLE
P32 MBE (NCU)
C21 MBE (NCU)
Plasma-Assisted MBE (NSYSU)
LandMark Corporation
Xpert Corporation
Collaborations Between Different Institutes
Crystal Epitaxy and Optoelectronic Device Laboratory (RCAS)
NSYSU( 中山大學 )
中研院奈米計畫
CSIST( 中科院 )國科會計畫 Project
Collaboration
MBE growth( 杜立偉 教授 )
RCAS( 應科中心 )NCU
( 中央大學 )
MBE growth( 綦振瀛 教授 )
NTU( 臺灣大學 )國科會計畫
Project Collaboration
( 李嗣涔 教授 )
Xpert( 翔合 )
固本精進計畫
Local Wafer Vender (MBE)
Wafer Provider
TUB, GermanyPPP Project
GaSb QDs(Prof. Bumberg)
Multi-color Quantum-Dot Infrared PhotodetectorsMulti-color Quantum-Dot Infrared Photodetectors
InGaAs-Capped Quantum-Dot Infrared Photodetectors Operated at LWIR Range
2 4 6 8 10 12
0.0
0.5
1.0~ 7.9 m~ 6 m
Device B
Wavelength (m)
N
orm
aliz
ed R
espon
sivi
ty (a.
u.)
10 K2.0 V
Device A
4 6 8 10 12 140.0
0.2
0.4
0.6
0.8
1.0
1.2 10.4 m
Wavelength (m)
Device C10 K2.0 V
Res
pons
ivit
y (A
/W)
Substrate
Bottom Contact
50 nm GaAs
InAs QDs (ML)
42 nm GaAs
Top Contact 300 nm GaAs n=2x10 18 cm -3
600 nm GaAs n=2x10 18 cm -3
350 mm (100) Semi-Insulating GaAs
undoped
undoped
10x 8 nm In X Ga 1-X As (X=)
Samples A B C
0 15 15
2.5 2.5 2.0
E QD,0
E QD,1
E WL
GaAs InAs GaAs
(a)
(b)
E InGaAs
Appl. Phys. Lett., under revision
Stark Effect in Asymmetric QD structures
4 6 8 10 12 140.0
0.2
0.4
0.6
0.8
1.0
1.2
8 nm In0.15
Ga0.85
As
5.7 m
10.4 m
Wavelength (m)
10 K2.0 V
Res
pons
ivit
y (A
/W)
4 6 8 10 12 140.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.68 nm In
0.15Ga
0.85As
8.4 m
Wavelength (m)
10 K-2.0 V
Res
pons
ivit
y (A
/W)
2 4 6 8 10 12 14
4 nm In0.15
Ga0.85
As
1.6 V
-1.6 V
Wavelength (m)
10 K
Nor
mal
ized
Res
pons
ivit
y (a
.u.)
GaAs Barrier
GaAs Barrier
8 nm In 0.15 Ga 0.85 As Layer
2.0 ML InAs QDs
GaAs Barrier
GaAs Barrier
4 nm In 0.15 Ga 0.85 As Layer
2.0 ML InAs QDs
e -
e - e -
Accepted for publication at IEEE PTL.
Two-Color Quantum-Dot Infrared Photodetectors
2 4 6 8 10 12
0.0
0.2
0.4
0.6
0.8
1.0
Nor
mal
ized
Res
pons
ivit
y (a
.u.)
Wavelength (m)
2.6 V -2.6 V
10 K
InAs/GaAsQDs
InGaAs-capped QDs
PositiveBias
TopContact
BottomContact
Photo-excitedelectronsApplied
Voltage
NagativeBias
Photo-excitedelectrons
E F,quasi
E F,quasi
E F,quasi
AppliedVoltage
E F,quasi
350 m SI-GaAs substrate
50 nm undoped GaAs
2.5 ML InAs QDs
300 nm n-GaAs n=2x10 18 cm -3
5 x QD for MWIR
600 nm n-GaAs n=2x10 18 cm -3
50 nm undoped GaAs
2.0 ML InAs QDs
8 nm undoped In 0.15 Ga 0.8 5As
42 nm undoped GaAs
5 x InGaAs-cappedQD for LWIR
Appl. Phys. Lett., under revision
Site-Controlled Self-Self Assembled QDsSite-Controlled Self-Self Assembled QDs
Buffer Layer Growth on Patterned Substrates
50 nm GaAs/GaAsSb
24
68
10m)
24
68
10m)
24
68
10m)
100 nm GaAs
100 nm GaAsSb
Fabrication of Nano-Holes on GaAs Substrates
Appl. Phys. Lett. 88, 072107 (2006)
AFM Local Oxidation
MBE Thermal Desorption
Thin Buffer Layer Growth
Site-Controlled Self-Assembled QD growth
Fabrication of Nano-Holes on GaAs Substrates
0.60鑑0.60鑑0.6 m 0.6 m
After Oxidation After Thermal Desorption
Site-Controlled Self-Assembled Quantum Dots Grown on GaAs Substrates
0.0 0.5
0
1
2
3
4
5
0.0 0.5
0
1
2
3
4
5
0 1 2 3
0
1
2
3
m
m
Nano-oxides Site-controlled QDs
m)
Site-controlled QDsDot density 1x107 cm-2
0 2 4 6 8 100.20.40.60.81.01.21.41.61.82.02.22.42.6
RM
S (
nm )
CaAs Cap GaAs
0.97Sb
0.03 Cap
Buffer Thickness ( nm )
AFM Local Oxidation
Smooth Surfaces of Thin GaAsSb Buffers
Site-Controlled Self-Assembled QDs with Ultra-Low Dot Density 1x107 cm-2
Submitted to Appl. Phys. Lett.
GaSb Quantum Dots/Quantum RingsGaSb Quantum Dots/Quantum Rings
GaSb QDs grown under Different V/III Ratios
V/III=2.0
V/III=1.6
V/III=1.2
V/III=1.0
The Evolution of GaSb Quantum Rings with As Supply
100 % Sb
50 % Sb
4 sec. As irradiation
8 sec. As irradiation
Future WorkFuture Work
GaN-Based Devices By Plasma-Assisted Molecular Beam Epitaxy
350 400 450 500
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5In
0.2Ga
0.8N
GaN
PL
Inte
nsi
ty (a.
u.)
Wavelength (m)
300 K
GaN Rods on Si (111) InGaN film on GaN templates
340 350 360 370 380 390 400
GaN:Mg Rods
P4P3
P2
P1
300 K
200 K
250 K
150 K
100 K
77 K
PL
Int
ensi
ty (
a.u.
)
Wavelength (nm)
Future Work
Epitaxially Grown Graphene by MBE - Career development award - A new MBE system with max. substrate temperature 1200 oC - Filament C source and N plasma source within a single chamber
Single-QD Devices - Based on current site-controlled QD growth technique - Single-photon generator array - Single-electron transistor array
Long-Wavelength Light Sources and Detectors - A new measurement system up to 100 m - New device structures for tunable long-wavelength light sources/detectors
Publications after 2008
1. Chun-Yuan Huang, Meng-Chyi Wu*,Jeng-Jung Shen, and Shih-Yen Lin, “Self-ordered InGaAs Quantum Dots Grown at Low Growth Rates”, J. Appl. Phys. vol. 103, no. 4, pp. 044301, Feb. 2008 (SCI, IF:, NSC 95-2215-E-007-003.).2. Chi-Che Tseng, Shu-Ting Chou, Yi-Hao Chen, Tung-Hsun Chung, Shih-Yen Lin* and Meng-Chyi Wu,” Influence of As-stabilized surface on the formation of InAs/GaAs quantum dots”, J. Vacuum Sci. Tech. B, vol. 26, no. 3, pp. 956-958, May/June 2008 (SCI, IF: 1.419, NSC 96-2221-E-001-030).3. Shu-Ting Chou, Chi-Che Tseng, Cheng-Nan Chen, Wei-Hsiun Lin, Shih-Yen Lin*, and Meng-Chyi Wu, “Quantum-Dot/Quantum-Well Mixed-Mode Infrared Photodetectors for Multi-Color Detection”, Appl. Phys. Lett., vol. 92, no. 25, pp. 253510, June 2008 (The paper is also selected in the Virtual Journal of Nanoscale Science & Technology, Volume 18, Issue 2 (2008)) (SCI, IF: 3.596, NSC 96-2221-E-001-030).4. C. L. Tsai, K. Y. Cheng, S. T. Chou, S. Y. Lin, C. Xu and K. C. Hsieh, “Tailoring detection wavelength of InGaAs quantum wire infrared photodetector”, J. Vacuum Sci. Tech. B, vol. 26, no. 3, pp. 1140-1144, May/June 2008 (The paper is also selected in the Virtual Journal of Nanoscale Science & Technology, Volume 17, Issue 23 (2008)) (SCI, IF: 1.419).5. Chi-Che Tseng, Shu-Ting Chou, Yi-Hao Chen, Cheng-Nan Chen, Wei-Hsun Lin, Tung-Hsun Chung, Shih-Yen Lin*, Pei-Chin Chiu, Jen-Inn Chyi and Meng-Chyi Wu, “Enhanced Normal-Incident Absorption of Quantum-Dot Infrared Photodetectors with Smaller Quantum Dots”, IEEE Photonics Technology Lett., vol. 20, no. 14, pp. 1240-1242, July 2008 (SCI, EI, IF: 2.015, NSC 96-2221-E-001-030)6. Shu-Ting Chou, Shih-Yen Lin*, Cheng-Nan Chen, Chi-Che Tseng, Yi-Hao Chen, and Meng-Chyi Wu, “Single-Period InAs/GaAs Quantum-Dot Infrared Photodetectors”, IEEE Photonics Technology Lett., vol. 20, no. 18, pp. 1575-1577, Sep. 2008 (SCI, EI, IF: 2.015, NSC 96-2221-E-001-030).7. Chi-Che Tseng, Shu-Ting Chou, Shih-Yen Lin*, Cheng-Nan Chen, Wei-Hsun Lin, Yi-Hao Chen, Tung-Hsun Chung, and Meng-Chyi Wu, “The Transition Mechanisms of a ten-Period InAs/GaAs Quantum-Dot Infrared Photodetector”, J. Vacuum Sci. Tech. B, vol. 26, no. 6, pp. 1831-1833, Nov/Dec 2008 (SCI, IF: 1.419, NSC 96-2228-E-002-012).8. S. T. Chou, S. Y. Lin*, Bonnie Yu, J. J. Shyue, C. C. Tseng, C. N. Chen, M. C. Wu and W. Lin, “The Influence of Interface Roughness on the Normal Incident Absorption of Quantum-Well Infrared Photodetectors”, Thin Solid Films, vol. 517, no. 5, pp. 1799–1802, Jan. 2009 (SCI, IF: 1.693, SBIR project with Grant # 1C950022).9. Yung-Sheng Wang, Shoou-Jinn Chang, Shu-Ting Chou and Shih-Yen Lin* and Wei Lin, “High Responsivity InGaAs/InP Quantum-Well Infrared Photodetectors Prepared by Metal Organic Chemical Vapor Deposition”, Jpn. J. Appl. Phys. vol. 48, no. 4, pp. 04C108, May 2009 (SCI, IF:, SBIR project with Grant # 1C950022).10. Shih-Yen Lin*, Shu-Ting Chou, Wei-Hsun Lin, “The Transition Mechanisms of Quantum-Dot/Quantum-Well Mixed-Mode Infrared Photodetectors”, Infrared Physics & Technology, in press (SCI, IF:, NSC 96-2221-E-001-030 and NSC 96-2218-E-002-012).
Publications after 2008
11. Wei-Hsun Lin, Chi-Che Tseng, Kuang-Ping Chao, Shu-Chen Mai, Shih-Yen Lin*, and Meng-Chyi Wu, “InGaAs-Capped InAs/GaAs Quantum-Dot Infrared Photodetectors Operating in the Long-Wavelength Infrared Range”, IEEE Photonics Technology Lett. accepted for publication (SCI, IF:, NSC 96-2221-E-001-030 and NSC 96-2218-E-002-012). 12. Wei-Hsun Lin, Chi-Che Tseng, Kuang-Ping Chao, Shih-Yen Lin*, and Meng-Chyi Wu, “Enhancement of Operation Temperature of InAs/GaAs Quantum-Dot Infrared Photodetectors with Hydrogen-Plasma Treatment”, J. Vacuum Sci. Tech. B accepted for publication (SCI, IF:, NSC 96-2221-E-001-030 and NSC 96-2218-E-002-012).13. Shih-Yen Lin*, Wei-Hsun Lin, Chi-Che Tseng, Kuang-Ping Chao, and Shu-Cheng Mai, “Voltage-Tunable Two-Color Quantum-Dot Infrared Photodetectors”, Appl. Phys. Lett. under revision (SCI, IF:, NSC 98-2221-E-001-001).14. Wei-Hsun Lin, Kuang-Ping Chao, Chi-Che Tseng, Shu-Chen Mai, Shih-Yen Lin* and Meng-Chyi Wu, “The influence of In composition on InGaAs-capped InAs/GaAs quantum-dot infrared photodetectors”, J. Appl. Phys. under revision (SCI, IF:, NSC 98-2221-E-001-001).15. Shih-Yen Lin*, Chi-Che Tseng, Tung-Hsun Chung, Wen-Hsuan Liao, Shu-Han Chen, and Jen-Inn Chyi, “Site-Controlled Self-Assembled InAs Quantum Dots Grown on GaAs Substrates”, submitted to Appl. Phys. Lett. (SCI, IF:, NSC 98-2221-E-001-001). 16. Chi-Che Tseng, Tung-Hsun Chung, Shu-Cheng Mai, Kuang-Ping Chao, Wei-Hsun Lin, Shih-Yen Lin* and Meng-Chyi Wu, “The transition mechanism of InAs/GaAs quantum-dot infrared photodetectors with different InAs coverages”, submitted to J. Vacuum Sci. Tech. B (SCI, IF:, NSC 98-2221-E-001-001).17. Wei-Hsun Lin, Chi-Che Tseng, Kuang-Ping Chao, Shu-Chen Mai, Shih-Yen Lin*, and Meng-Chyi Wu, “InGaAs-Capped InAs/GaAs Quantum-Dot Infrared Photodetectors with 10.4 m Responses”, submitted to J. Vacuum Sci. Tech. B (SCI, IF:, NSC 98-2221-E-001-001).