Radiation Hard Silicon Particle Detectors for Phase … · Radiation Hard Silicon Particle...

RadiationHardSiliconParticleDetectorsforPhase-IILHCTrackers

AgnieszkaObłąkowska-MuchaAGHUST Kraków

onbehalf oftheRD50Collaboration

14thTopicalSeminaronInnovativeParticleandRadiationDetectors3- 6October2016 Siena,Italy

Outline

04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 2

RD50

1. Introduction.2. ThetimelineofLHCandexperiments.3. Radiationinducedchangesinpropertiesofthesilicontracking

detectors.4. Developmentofnewstructures:• 3DPixels,• HVCMOS,• LGAD.5. Measurementtechnique:TCT.6. Newirradiationcenter– IRRAD2.

Simulationof400proton-proton collisionsinjustone25nsbunchcrossingattheHL-LHC

HL-LHCTimeline


RD50

4. Twomajorshutdowns (LS2 &LS3)– mainacceleratoranddetectorupgrades.

1. LHCwasplanedfor10yearsofoperation(ℒ = 300𝑓𝑏()), i.e.till theendofRun3(2023).

2. Itwasassumedthattracking detectorswill havetobereplacedduetoradiationdamageandageing (ornewphysicsprogram).

3. BasedonexperiencefromRunI, withnewtechnologies inmind, it’stheright timetodesign themNOW!

Experiments - Phase 1Upgrade


RD50

Phase 1Upgrade(24months):• CMS- Pixeldetectorreplacement,• LHCb- VELOstripdetectorreplacementbypixels,new strip UT.

5.1.Upgradeofthesilicon tracking detector.

Experiments - Phase 2Upgrade


RD50

Phase2Upgrade(30months):• LHC:newquadrupoles inthecollision region,crab cavities,• CMS:newtracker, HGCAL,• ATLAS:replacementoftheInnerDetector,• LHCbmajordetectorupgradeduring LS4

5.2.Upgradeofthesilicon tracking detector.

HighLeveloffluence@HL-LHC


RD50

1. LHCwillproducecollisionsatarateofabout 5·109s-1.2. Theannual dose at HL-LHCwill besimilar tothetotal dose until LS3:

• endofRunIII(300fb-1)Φ~2·1015 neq cm-2

• HL-LHC(3000fb-1)Φ~2·1016 neq cm-2

4. ThemainobjectiveforRD50isdevelopmentofradiationhardsemiconductordetectorsforHL-LHC.5. Theradiationhardnessabove1016 neq cm-2 (whilemaintainingtheS/Nratio>10)isrequiredwithfast

signalcollectionandaffordablecost.CurrentLHCdetectorcanoperateupto fluence 1015 neq cm-2

6. DefectinducedbyparticleradiationandtheirinfluenceondetectorperformanceareofmajorinteresttoRD50.

1fb-1 3000fb-1

Firstradiationproblems


RD50

TheLHCbsiliconvertexdetectorwill not bereplaced.ThemainVELOupgrade (pixels)isplannedforLS2(2018).

VELOreplacement is currentlyondisplayat LHCbPit.

The newinnermost layerofATLASInnerTrackerwasinstalled(IBL)inside thePixel Detector during LS1.

Thesourceofradiationdamage


RD50

1. Themainsourceofradiationisfromparticlesproducedinsoft p-pinteractions(neutrons,pions,protons)andsecondaryinteractionswiththedetectormaterial.

2. Non-IonizingEnergyLoss(Ek >15eV)ofimpingingparticlemaydisplaceasiliconatomfromthelattice.

3. Creationofdefectsdependsonthekindofparticleanditsenergy.4. Displacementsofsiliconatomsproducevacanciesandinterstitials.

5. Crystalimpuritiesinteractwithdefectscausingthechangeinelectricalpropertiesofdetector.

[Mik

a H

uhtin

enN

IMA

491

(200

2) 1

94]10MeVprotons 24GeV/cprotons 1MeVneutrons

Simulation of radiation 1014 particles/cm2

Pointdefects+clusterdefects+impurities=degradationofthedetector

Radiationdamageeffects(1)


RD50

Radiationinducedchangesinpropertiesandstructuresofthesilicontrackingdetectors are observed as...

macroscopic effects… causedby … microscopicdefects

10-1 100 101 102 103

Φeq [ 1012 cm-2 ]

1

510

50100

5001000

5000

Ude

p [V

] (d

= 3

00µm

)

10-1

100

101

102

103

| Nef

f | [

1011

cm

-3 ]

≈ 600 V≈ 600 V

1014cm-21014cm-2

"p - type""p - type"

type inversiontype inversion

n - typen - type

[Data from R. Wunstorf 92]

1. Changeofdepletionvoltage: ▸ duetochargedenergy levelsinthedepletedregion (mostproblematic).

Defectschangetheeffectivedopingconcentrationandhasimpactonbiasvoltageusedtofullydepletethesensor.Significantprogressonidentifyingdefects wasperformedwithin RD50group.Duetoexcessofacceptor-likedefectsanddonorremoval(V-Pdefect),initiallyn-typesensorchangesintop-typesensor(atLHCfirstobservedinLHCbVELO).

Valence Band

Conduction Band

Appl.Phys.Lett.82,2169(2003),Nucl.Instr.andMeth.inPhys.Res.A611(2009)52,Appl.Phys.Lett.92(2008)024101;)J.Appl.Phys.117(2015)164503;Nucl. Instr. andMeth. inPhys.Res. A612,525-529,2010.



RD50

2. Increaseof leakagecurrent:▸ bulkcurrentdueto

generation/recombination centers inthemid-gap.

1011 1012 1013 1014 1015

Φeq [cm-2]10-6

10-5

10-4

10-3

10-2

10-1

ΔI /

V

[A/c

m3 ]

n-type FZ - 7 to 25 KΩcmn-type FZ - 7 KΩcmn-type FZ - 4 KΩcmn-type FZ - 3 KΩcm

n-type FZ - 780 Ωcmn-type FZ - 410 Ωcmn-type FZ - 130 Ωcmn-type FZ - 110 Ωcmn-type CZ - 140 Ωcm

p-type EPI - 2 and 4 KΩcm

p-type EPI - 380 Ωcm

[M.Moll PhD Thesis][M.Moll PhD Thesis]

Valence Band

Conduction Band

holes

electrons



Defectsareabletocaptureandemitelectronsandholes– sourceof the reverse-biascurrent.Higher noise andpower consumption.



RD50

3. Decreaseofchargecollectionefficiency:

▸ duetodamageinduced trappingcenters.

Valence Band

Conduction Band

holes

electrons

CMSTrackerJIN

ST9(2

014)12



Defectsactasatrappingcenters- electronsandholesarere-emittedwithsometimedelay.Thesignalchargeistrappedandmaybereleasedtoolatefor25nsread-out.Thisisthemostseriousproblemfordetectorirradiatedwithfluenceabove1015 neqcm-2.

CallRD50incase ofradiationdamageproblem…


RD50

RD50 - Radiation hard semiconductor devices for very high luminosity colliders.1.Formed in2001,approvedbyCERNin2002.2.Themainobjectiveis:Developmentofradiationhardsemiconductordetectorsfortheluminosityupgradeof

theLHCto7.5·1034cm-2s-1.3.Challenges:

• radiation hardnessupto1016 cm-2required,• fast signalcollection– planfor 10nsbunchcrossing,• lowmasstoreducemultiple scatteringclosetointeractionpoint,• affordable cost.

4.ThecurrentactivitiesodRD50include:a) identifying thedefectsthroughdedicatedmeasurementtechniques (DLTS,TSC,TCT)

ormonitoring themacroscopicchangesinHEPexperiments.b) work outhowtogetridofdamage(oravoidit)– newtechnologies,newstructures

(3Dsensors,HVCMOS, LGAD, simulation (FLUKA,GEANT4,TCAD…).c) testthesolution:

• neutron exposition innuclearreactor,• proton irradiationatcyclotronsandsynchrotrons,• newdedicatedirradiationcenter@CERN.

d) incorporatethefeedbackfromexperiments.

RD50Organisation


RD50

RD50 - Radiation hard semiconductor devices for very high luminosity colliders

Co-SpokespersonsGianluigi CasseandMichaelMoll

(LiverpoolUniversity,UK(CERNEP-DT)&FBK-CMM,Trento,Italy)

Defect/MaterialCharacterization

IoanaPintilie(NIMPBucharest)

DetectorCharacterizationEckhartFretwurst(HamburgUniversity)

FullDetectorSystems

GregorKramberger(LjubljanaUniversity)

• Characterizationofmicroscopicpropertiesofstandard-,defectengineeredandnewmaterialspre- andpost-irradiation

• DLTS,TSC,….• SIMS,ESR,…• NIEL(calculations)• WODEAN:Workshop

onDefectAnalysisinSiliconDetectors(I.Pintilie)

•Characterizationofteststructures(IV,CV,CCE,TCT,.)•Developmentandtestingofdefectengineeredsilicondevices•EPI,MCZandothermaterials•NIEL(experimental)•Devicemodeling•Operationalconditions•Commonirradiations•Waferprocurement(M.Moll)• DeviceSimulations(--)• Acceptorremoval(Kramberger)

•3Ddetectors•Thindetectors•Costeffectivesolutions•Othernewstructures•Detectorswithinternalgain(avalanchedetectors)

• LGAD:LowGainAvalancheDet.•DeepdepletedAvalancheDet.•SlimEdges•HVCMOS•3D(R.Bates)• LGAD(S.Hidalgo)• SlimEdges(V.Fadeyev)

• LHC-liketests• LinkstoHEP(LHCupgrade,FCC)• LinkselectronicsR&D• Lowrhostrips•Sensorreadout(Alibava)•Comparison:- pad-mini-fulldetectors- differentproducers

•RadiationDamageinHEPdetectors

•Testbeams(M.Bomben &G.Casse)

NewStructures

GiulioPellegrini(CNMBarcelona)

M.Moll September2016

CollaborationBoardChair&Deputy:G.Kramberger (Ljubljana)&J.Vaitkus (Vilnius),Conferencecommittee:U.Parzefall (Freiburg)CERNcontact:M.Moll (EP-DT),Secretary:V.Wedlake (EP-DT),Interimbudgetholder&GLIMOS:M.Moll (EP-DT)

Advanceddetectordesign– 3Dpixel sensors


RD50

1. Currentlyawellknowntechnology (S.I.Parkeretal.,NIMA395(1997)328).

2. 3DpixelsensorsareinstalledinATLASIBL,AFP,CMSTotem.3. Theyaredesignedasverticalnarrowcolumnarpandnelectrodespenetrating thesiliconsubstrate.

3Dpixels

3.Advantages:• diameter:10 µm,distanceL:50– 100 µm(smalldrift

distance,lesstrapping),• lowerdepletionvoltage:10-200V(lower power),

thinner detectorspossible,• fastsignal formation,• radiationhard,• activeorslimedgestechnology.

4.Problems:• Nonuniformspatialresponse (electrodesareinefficient regions).• Highercapacitance,highernoise.• Complicatedfabricationtechnology (time,cost,yield).

3DPixels/Strips

Planarpixels

3Dpixel sensors forLHC


RD50

ForLHCafewdeviceswereprojectedandtestedforradiationhardness:

• 230μm thicksensorsbyCNMandFBK• FEI4s:50x250μm 2E,67μm inter-el.distance

CNM3DpixelsforIBL

Double sided (DDTC) technique:• n+ and p+ columns are etched from the two

sides of the sensor wafer.• Slimedges(200μm)

3Dsensorsirradiated (protons,neutrons, pions,electrons) uptoIBLfluence5·1015 neqcm-2

Radiationhardnessupto5·1015neqcm-2 established:

EfficiencyforCNMsensorsreached99%.

ATLASIBLC

oll,JIN

ST7(2012)P11010

3Dpixel sensors forHL-LHC


RD50

Developmentofnewgeneration3DpixelsensorsforHL-LHC:• radiationhardnessup to2·1016 neqcm-2.• reducedpixelsize:50×50𝜇𝑚0 or25×100𝜇𝑚0 .• smallinter-electrodedistance(lesstrapping).• reducedthickness100 − 150𝜇𝑚(smallleakagecurrent).First prototypeofnewgeneration3Dpixelsfinished (January2016).

Threedifferent technologies tested:

singlesided,activeedge doublesided

3Dpixel sensors forHL-LHC- prospects


RD50

Thesignalefficiencyisabout60-70%at 5·1015 neqcm-2 and30%at almost1016 neqcm-2 withnot muchincreaseof𝑉5678.Signalefficiencywasimprovedwithdecreasingelectrodedistance.

[1]ATLASIBLCollaboration,submittedtoJINST(2012)[2]M.Koehleretal.NIMA659(2011)272[3]C.DaVia,etal.,NIMA604(2009)505CompilationbyC.DaVia

RD50project:JointMPWpixelrunforATLAS,CMS,LHCb.

Motivations:1.Manufacturesmallerareapixelsonthinsensors.2.Study of radiationhardness.

Lope

z Pa

zet

al..

RD50workshop2015,CER

N

Joint3DMPWpixel run


RD50

A

B C

C

D

E

F

F

G

G

GG

GGHL L L

M

M

N O N

IIIIII

Testofdifferentconfigurations forvariousreadoutchipsandpitchsize:

• A:standardFe-I4• B:25x100um2("25x500"1E,with 3DGR- alaGP).• C:50x50um2withtherestconnected toGNDwith3DGR• D:25x100um2 (2E- version4x100+gridtoGND- alaGF)• E:50x50um2 withtherestconnected toGNDwithout3DGR• F:FEI3device:x50x50um2withresttoGNDwith3DGR• G:ROC4sens50x50um2• H:PSI46dig• IFERMILABRDROC30x100um2• L:Velopix55x55um2• M:Strip50x50um2• MStrip25x100um2• OStrip30x100um2f

JointMulti ProjectWafer pixelrun forATLAS,CMS,LHCb.

G.PellegriniRD5

0Worksho

pDec201

5

50µm 35µm

Alsosingle sided technology:• 50𝜇𝑚 thickdetectorswith SOI supportwafer(350𝜇𝑚 ),

• Possibletothindownthedetectors.• 5𝜇𝑚 holediameter.• Detectortested,good I-V,• more complicated technology

Newtechnology–HVCMOS


RD50

HighVoltageCMOS• n-wellsareimplantedinlowresistivity(~10Ωcm)p-typesubstrate andplay roleofelectrode implant,

• biased with60Vbutallowsonlyshallow(10 −20𝜇𝑚)depletionzone,signal1-2kel.

• thinactivelayer,• lowdriftdistance,small drift time (fastcollection),• radiationhard(lesstrapping),

From

:S.Fenandez-P

erez,TW

EPP20

15

notdepleted

RD50startedtoworkonHV-CMOSdevices in2014withafocusoncharacterizingtheradiationdamage

• possible tousecapacitivecoupling throughglueinsteadofbump-bonding,• industrialprocessenableslargevolumeproduction inrelativelyshorttime,• bothpixelandstripdetectorpossible,• fullymonolithicdevicesdon’t requireabump-bonded read-out.

HVCMOS– signal collection


RD50

Highvoltageisusedtodepleteapartofthesubstrate:• Themainchargecollectionmechanism isdrift,• Partofthesignaloriginatesfromtheundepleted regionand

iscollectedbydiffusion,• Edge-TCTmeasurementsshoweddriftanddiffusion

component

M.Fernández

GarcíaRD

50W

orkshopNov

2014

driftdiffusion

Thechargecollectionprofilesofirradiatedsamplesshowquickdisappearanceofdriftconstituent.

HVCMOS– irradiationtests


RD50

Chargecollectionproperties studiedafterirradiationtohighneutron fluences withEdge-TCTtechniques.

AMS350𝑛𝑚 production, CHESS-1sensors• 2 mmx2 mmpassivesensor (400pixel)• Sr90 electrons forCCE,25nsshaping, 120V,TCT

AMS180𝑛𝑚 production, HV2FEI4• 100 µmx100µmpassivepixel,• IR-laser,5nsintegration

A.Affolder

etal.,2016JIN

ST11P04007

M. Fernández García 2016 JINST 11 P02016

• CCEdecreasesforfluenceup to2-5·1014 neqcm-2 duetodiffusion decrease.• Forhigher fluence thesignalisrisingduetoincreaseofactivevolume (acceptorremoval).• FinallyCCEdegradesduetomoreintensetrapping causedbyspacecharge.• Forfluence2·1016 neqcm-2 @ 80Vcharge collection is 90%ofsignal before irradiation!

Verypromising forhighradiationenvironments!

CHESS

Chargemultiplication inSidetectors


RD50

Chargemultiplication:• signallargerthanexpectedfromconventionalsilicondevicesobservedafterirradiation 2-5·1015 neqcm-2 ,

• irradiationcausesnegativespacechargeindetectorbulkthatincreasestheelectricfiled(>15V/µm),impacttheionisationwhichmanifeststhroughchargemultiplication,

• observedindifferenttypesofdevices(diode,strip,3D),atveryhighbiasvoltages,heavyirradiated,

• couldbebeneficialforsensorsandgiveextrasignal– usableforHL-LHC.

RD50project:exploitchargemultiplicationdetectors:• 1cmx1cm,n-in-pFZstripdetectors,

• LGADsensors(firstsegmentalsensorsonthinsubstrates).

• exploitthechargemultiplicationeffect,• fabricate,testandirradiatesensors,• simulateandpredict (TCAD),• measurewithTCTsetup.

M.Kohler,NIMA,659(2011),2

72–2813D

J.Langeetal,16thRD5

0Workshop,Barcelona

Aims:

LGAD


RD50

The LowGainAvalancheDetector(LGAD):anewconceptof siliconradiationdetectorwith intrinsicmultiplication ofthecharge.

Advantages:• higherchargecollectionefficiency,• shortdrifttime,• signalshorterandsteeperwhileretainingalargeamplitude

duetothemultiplicationmechanism.

Afterirradiation(reactorneutronsand800MeVprotons):• decreaseofchargecollection,

G.Kram

berger

etal.201

5JIN

ST10P0

7006

G.Kram

berger

RD50

Worksho

pJune

2014

Newtechnology– Gallium insteadofBoron or add Carbontoprevent Boron removal

• decreaseofmultiplication(beforeirradiationitwas3timeshigherthanstandarddiode),afterirradiationwithfluence2·1015 neqcm-2 thegainwaslost.

Measurementtechniques- TCT


RD50

EdgeTransientChargeTechnique:MethodofreconstructionofelectricfieldpioneeredbyLjubljanagroupandpromotedbyRD50.

• photonpulses fromaninfrared laserare directedtowardsthedetectoredge,perpendicular tothestripsandfocused totheregionbelowthereadoutstrip,electron-holepairsareproduced,

G.Kam

berger

etal.2014JINS

T9P10016

• scansacrossthedetectorthicknessenablesrelativemeasurementoftheinducedcurrentatgivendepth,extrapolaterisetime,driftvelocityandchargecollectionprofiles,

• finally,theelectricfieldcanbereconstructedbydeterminationofdriftvelocity.

Edge-TCTiswidelyusedidealtooltostudysubstrateproperties!

TCT- flashofresults


RD50

HV-CMOS – different structures:• irradiatedbyreactorneutronsandPSprotons,• chargeprofilesatdifferentdepth andvs.biasvoltage,• widthofchargecollection,• determination ofNeff

Results:• neutronirradiationupto2×10)<𝑛=>𝑐𝑚(0 - initialacceptorremoval,

• increaseofspacechargeandchargecollectionisdegradingwithfluence

G.Kramberger

etal.,2016JINS

T11P04007

AMSCHESS1chips(20Ωcm)

Scandirection

IgorM

andić,RD

50W

orkshop,June2016,Torino


RD50TCT-3DandLGADexample

Signal amplification instrip-LGAD

Iván

Vila,RD5

0Workshop,June2016

G.PellegriniRD5

0Worksho

pDec201

5

3Dpixels (CNM)–irradiatedbyreactorneutronswith5×10)<𝑛=>𝑐𝑚(0

IrradiationFacilities


RD50

RD50isespeciallyhelpful forirradiationofthesilicondevicesincyclotrons, synchrotrons,reactors,etc. (full listis here)• CERN – 24GeVprotons,1MeVneutrons,• UniversityofKarlsruhe (25MeVprotons)• Jožef StefanInstitute (neutrons)• PaulScherrer Institut (300MeV/cpions)…

IRRAD2 - newCERNproton irradiationfacility

§ MixedfieldproducedincavityafterC(50cm)- Fe (30cm)- Pb (5cm)‘target’(IRRAD2)

§ 24GeV/cprotonbeam(IRRAD1,IRRAD3,IRRAD5,…)

MauriceGlaser

RD50W

orkshopDe

c.2015

Typical:1x1016p/cm2(5days)-1

ProtonFacility(IRRAD)

IRRAD2


RD50

17Nov.2014:firstirradiationexperimentsinthenewIRRAD2!

EA-IRRAD upgradeproject:JointeffortofmanyCERNgroups.PH-DT,EN-MEF,EN-STI(coreteams),HSEand EN-HDO(ProjectSafety),DGS-RP,EN-CV(ventilation),EN-HE (transports),GS-ASE (accesscontrol),BE-BIand TE-CRG (IRRADcryogenicsystem),…

MauriceGlaser

RD50W

orkshopDe

c.2015

9irradiationtablesoperationalfromOct.1st 20156xRTirradiation(IRRAD3,7,9,13,17,19)2xwater-cooledcoldboxesdownto-25°C(IRRAD5,11)1xdedicatedtothecryogenicsetup(IRRAD15)

p+

ColdBoxes

Mixed-field Facility(CHARM)

30weeksofbeamtime in201528userteams from18 institutes /experiments/R&D’s>300samples(active/passive)>250dosimetersmeasured (Alfoils)

1×10)@𝑝/𝑐𝑚(0(5𝑑𝑎𝑦𝑠)()

Summary


RD50

1. Silicondetectorscurrently installedinLHCexperimentsneedtobereplacedby2023atthelatest.

2. Currenttechnologiesarenotsufficient towithstandfluenceatthelevelof10)@𝑛=>𝑐𝑚(0 .

3. RD50Collaborationhasbeenworkingon:• newtechnologies insiliconsensorsproduction andnewdesignsofdetectors,• descriptionofdefectsandmaterialcharacterization,• simulationofthestructuresandradiationeffects,• methodsofmeasurementsandtestofirradiateddevices.

4. RD50:• fundscommonprojectswithcooperationbetweenmember institutions,• helpsandsupports studyofsilicondetectorsperformed inLHCexperiments,• isaplatformwherepioneering researchesinnewtechnologies meetwiththefinalimplementation inhugeexperiments.

5. RD50recommends thestructurestobestudiedbyHighLuminosityLHCexperiments:• 3Dsensors(smalldrift time– lesstrapping,pixelorstripdetector),• HV-CMOS(industrial productionofpixel/strip detectors,low cost,low bias,low mass,rad

hard),• LGAD(sensorwithintrinsic gain),• Slim/activeedgesensorstoreducedead space oflower efficiency.


RD50

26thRD50Workshop, June 2015

RD50isacommunityof282physicistandengineersfrom52institutes.

Radiation Hard Silicon Particle Detectors for Phase … · Radiation Hard Silicon Particle...

Documents

Transcript of Radiation Hard Silicon Particle Detectors for Phase … · Radiation Hard Silicon Particle...