RADIATION-HARD POLYCRYSTALLINE CdTe for LHC Luminosity...

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  • edouard.rossa@cern.ch 1st Workshop on Radiation hard semiconductor devices for very high luminosity colliders CERN 28-30 November, 2001

    nn High rate: 40MHzHigh rate: 40MHz nn High dose: 10High dose: 1088 Gy/yearGy/year nn 10101818 Neutrons/cmNeutrons/cm22

    nn 10101616 Protons/cmProtons/cm22

    RADIATIONRADIATION--HARD HARD POLYCRYSTALLINEPOLYCRYSTALLINE CdTeCdTe

    for LHC Luminosityfor LHC Luminosity MonitorMonitor

  • edouard.rossa@cern.ch 1st Workshop on Radiation hard semiconductor devices for very high luminosity colliders CERN 28-30 November, 2001

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  • edouard.rossa@cern.ch 1st Workshop on Radiation hard semiconductor devices for very high luminosity colliders CERN 28-30 November, 2001

    Authors:Authors: E. Rossa, M. Placidi, H. Schmickler,E. Rossa, M. Placidi, H. Schmickler,

    E. Gschwendtner:E. Gschwendtner: CERN Laboratory, Geneva, Switzerland,CERN Laboratory, Geneva, Switzerland,

    A. Brambilla, F. Mongellaz, L. Verger:A. Brambilla, F. Mongellaz, L. Verger: LETI, Grenoble, FranceLETI, Grenoble, France

    V.V.CindroCindro, M. , M. MikuzMikuz:: JSI Ljubljana SloveniaJSI Ljubljana Slovenia

    P. P. MoritzMoritz:: GSI Germany GSI Germany

  • edouard.rossa@cern.ch 1st Workshop on Radiation hard semiconductor devices for very high luminosity colliders CERN 28-30 November, 2001

    11-- IntroductionIntroduction

    22-- Speed testSpeed test

    33-- Sensitivity measurementSensitivity measurement

    44-- High dose radiation testsHigh dose radiation tests

    55--ConclusionConclusion

  • edouard.rossa@cern.ch 1st Workshop on Radiation hard semiconductor devices for very high luminosity colliders CERN 28-30 November, 2001

    11--Introduction Introduction

    a) Minimum Ionizing Particle (MIP) creates charges in semiconductor.

    n Thickness 300 µm CdTeCdTe GaAs Si Diamond n Density [g/cm3] 5.85 5.32 2.33 2.88 n Thickness : δ [g/cm2] .176 .160 .070 .086 n (dE/dx)min [MeV/(g/cm2)] 1.26 1.40 1.66 1.78 n Ionisation potential : IO [eV] 4.43 4.2 3.61 13 n Number of charges created 50’000 50’000 53’000 32’200 11’850

  • edouard.rossa@cern.ch 1st Workshop on Radiation hard semiconductor devices for very high luminosity colliders CERN 28-30 November, 2001

    b) CdTe Xb) CdTe X-- RAY detector RAY detector running in LEP for beam running in LEP for beam

    emittance measurement was emittance measurement was daily used afterdaily used after

    Gray total dose.Gray total dose.10101414

  • edouard.rossa@cern.ch 1st Workshop on Radiation hard semiconductor devices for very high luminosity colliders CERN 28-30 November, 2001

    --Time response of sample : Time response of sample : 172c/ 100 V 2.5 ns/cm172c/ 100 V 2.5 ns/cm

  • edouard.rossa@cern.ch 1st Workshop on Radiation hard semiconductor devices for very high luminosity colliders CERN 28-30 November, 2001

    Test with MIP (Sr90)Test with MIP (Sr90) CdTe detector test with MIPS sample ref 172/ 470 microns

    (Integrating Amplifier: D. Meier Set-up)

    y = -0.034x2 + 56.181x + 167.77 R2 = 0.995

    -5000

    0

    5000

    10000

    15000

    20000

    25000

    -100 0 100 200 300 400 500 600 700 800 900

    Bias Voltage (Volts)

    Electrons collected per MIP

    172/0

    Poly. (172/0)

  • edouard.rossa@cern.ch 1st Workshop on Radiation hard semiconductor devices for very high luminosity colliders CERN 28-30 November, 2001

    BBiiaass VVoollttaaggee

    5500 oohhmm ccaabbllee AAA=== 111000000

    Digital Oscilloscope

    DDeetteeccttoorr

    Experimental setExperimental set--upup

  • edouard.rossa@cern.ch 1st Workshop on Radiation hard semiconductor devices for very high luminosity colliders CERN 28-30 November, 2001

    Test with fast preamplifier and Test with fast preamplifier and 90Sr sample 172N 200V 90Sr sample 172N 200V

    2.7microamp2.7microamp

    •Amplifier output

    •Averaged output

    •Histogram of amplifier output:

    •Noise •Sr90

    •Amplifier developed in GSI (De): GSI-DBA-II Diamond Broadband Amplifier: 0.003-2.3 GHz bandwidth

  • edouard.rossa@cern.ch 1st Workshop on Radiation hard semiconductor devices for very high luminosity colliders CERN 28-30 November, 2001

    120 120 GevGev BeamBeam Detector 470 Detector 470 µµmm

    y = -20699x2 + 72013x

    R2 = 0.9978

    0.E+00

    1.E+04

    2.E+04

    3.E+04

    4.E+04

    5.E+04

    6.E+04

    7.E+04

    0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

    Electric field (V / micrometer)

    C ol

    le ct

    ed e

    le ct

    ro ns

    p er

    b ea

    m

    pa rt

    ic le

    detect 253 and 2 GhZ linear Amplifier

    Poly. (detect 253 and 2 GhZ linear Amplifier)

  • Time response of CdTe samples before irradiation: sample 172REF

    after irradiation sample 172N (10^15 n/cm2)

    -9

    -7

    -5

    -3

    -1

    -10 -5 0 5 10 15 20 25 30 35 40

    ns

    O ut

    pu t s

    ig na

    l ( A

    .U )

    172REF

    172N

    Laser-test (1047 nm, 60 ps FWHM, 500µJ/CM2)

    Irradiation test at 10Irradiation test at 101515 neutrons/cm2neutrons/cm2

  • edouard.rossa@cern.ch 1st Workshop on Radiation hard semiconductor devices for very high luminosity colliders CERN 28-30 November, 2001

    Detector box for OnDetector box for On--line line measurement during measurement during

    irradiation testirradiation test

  • edouard.rossa@cern.ch 1st Workshop on Radiation hard semiconductor devices for very high luminosity colliders CERN 28-30 November, 2001

    Detector box for OnDetector box for On--line line measurement during measurement during

    irradiation testirradiation test

  • edouard.rossa@cern.ch 1st Workshop on Radiation hard semiconductor devices for very high luminosity colliders CERN 28-30 November, 2001

    SetSet--up for Onup for On--line line measurement during irradiation measurement during irradiation

    testtest

  • edouard.rossa@cern.ch 1st Workshop on Radiation hard semiconductor devices for very high luminosity colliders CERN 28-30 November, 2001

    Irradiation TestsIrradiation Tests nn Triga type reactor Triga type reactor

    (Ljubljana,Slovenia)(Ljubljana,Slovenia) ll Irradiation stepsIrradiation steps ÀÀ 101013 13 n/cmn/cm2 2

    ÁÁ 101015 15 n/cmn/cm2 2

    ÂÂ 101016 16 n/cmn/cm2 2 activation of all setactivation of all set--upup ÃÃ next step 10next step 101717n/cmn/cm22

  • edouard.rossa@cern.ch 1st Workshop on Radiation hard semiconductor devices for very high luminosity colliders CERN 28-30 November, 2001

    Carrier lifetime measurement CdTe detector n:389 (441 microns /400 Volts)

    -1.00

    -0.50

    0.00 -10 -5 0 5 10 15 20 25 30

    Time in nanosecond

    A m

    p li

    tu d

    e o

    f th

    e s

    ig n

    a l

    (A .U

    ) li

    n e

    a r

    s c

    a le

    After 10^16 n/cm2 before irradiation

    Irradiation testIrradiation test at 10at 1016 16 n/cmn/cm22

  • edouard.rossa@cern.ch 1st Workshop on Radiation hard semiconductor devices for very high luminosity colliders CERN 28-30 November, 2001

    Log of the Amplitude of the signal decay in linear scale

    CdTe detector n: 389 (441 microns / 400 Volts)

    y = -0.7252x + 0.6431

    y = -0.358x - 0.5418 y = -0.7072x + 0.6798

    y = -0.3542x - 0.6078

    -7.5

    -6.5

    -5.5

    -4.5

    -3.5

    -2.5

    -1.5

    -0.5

    0 5 10 15 20

    Time in nanosecond

    Lo g(

    A B

    S (

    A m

    pl itu

    de ))

    (Fast) after 10^16 n/cm2 (Slow) after10^16 n/cm2 (Fast) before irradiation (Slow) before irradiation Linear ((Fast) after 10^16 n/cm2) Linear ((Slow) after10^16 n/cm2) Linear ((Fast) before irradiation) Linear ((Slow) before irradiation)

    Carrier life time before irradiation slow = 2.82 ns fast = 1.41 ns after 10^16n/cm2 slow = 2.8 ns fast = 1.38 ns

    Carrier lifetime measurementCarrier lifetime measurement after 10after 101616 n/cmn/cm22

  • edouard.rossa@cern.ch 1st Workshop o