RADIATION-HARD POLYCRYSTALLINE CdTe for LHC Luminosity...

[email protected] Workshop on Radiation hard semiconductor devices for very high luminosity colliders CERN 28-30 November, 2001

nn High rate: 40MHzHigh rate: 40MHznn High dose: 10High dose: 1088 Gy/yearGy/yearnn 10101818 Neutrons/cmNeutrons/cm22

nn 10101616 Protons/cmProtons/cm22

RADIATIONRADIATION--HARD HARD POLYCRYSTALLINEPOLYCRYSTALLINE CdTeCdTe

for LHC Luminosityfor LHC LuminosityMonitorMonitor


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Authors:Authors:E. Rossa, M. Placidi, H. Schmickler,E. Rossa, M. Placidi, H. Schmickler,

E. Gschwendtner:E. Gschwendtner:CERN Laboratory, Geneva, Switzerland,CERN Laboratory, Geneva, Switzerland,

A. Brambilla, F. Mongellaz, L. Verger:A. Brambilla, F. Mongellaz, L. Verger:LETI, Grenoble, FranceLETI, Grenoble, France

V.V.CindroCindro, M. , M. MikuzMikuz::JSI Ljubljana SloveniaJSI Ljubljana Slovenia

P. P. MoritzMoritz::GSI Germany GSI Germany


11-- IntroductionIntroduction

22-- Speed testSpeed test

33-- Sensitivity measurementSensitivity measurement

44-- High dose radiation testsHigh dose radiation tests

55--ConclusionConclusion


11--Introduction Introduction

a) Minimum Ionizing Particle (MIP) creates charges in semiconductor.

n Thickness 300 µm CdTeCdTe GaAs Si Diamondn Density [g/cm3] 5.85 5.32 2.33 2.88n Thickness : δ [g/cm2] .176 .160 .070 .086n (dE/dx)min [MeV/(g/cm2)] 1.26 1.40 1.66 1.78n Ionisation potential : IO [eV] 4.43 4.2 3.61 13n Number of charges created 50’000 50’000 53’000 32’200 11’850


b) CdTe Xb) CdTe X-- RAY detector RAY detector running in LEP for beam running in LEP for beam

emittance measurement was emittance measurement was daily used afterdaily used after

Gray total dose.Gray total dose.10101414


--Time response of sample : Time response of sample : 172c/ 100 V 2.5 ns/cm172c/ 100 V 2.5 ns/cm


Test with MIP (Sr90)Test with MIP (Sr90)CdTe detector test with MIPS sample ref 172/ 470 microns

(Integrating Amplifier: D. Meier Set-up)

y = -0.034x2 + 56.181x + 167.77R2 = 0.995

-5000

0

5000

10000

15000

20000

25000

-100 0 100 200 300 400 500 600 700 800 900

Bias Voltage (Volts)

Electrons collected per MIP

172/0

Poly. (172/0)


BBiiaass VVoollttaaggee

5500 oohhmm ccaabbllee AAA=== 111000000

DigitalOscilloscope

DDeetteeccttoorr

Experimental setExperimental set--upup


Test with fast preamplifier and Test with fast preamplifier and 90Sr sample 172N 200V 90Sr sample 172N 200V

2.7microamp2.7microamp

•Amplifier output

•Averaged output

•Histogram of amplifier output:

•Noise •Sr90

•Amplifier developed in GSI (De): GSI-DBA-II Diamond Broadband Amplifier: 0.003-2.3 GHz bandwidth


120 120 GevGev BeamBeamDetector 470 Detector 470 µµmm

y = -20699x2 + 72013x

R2 = 0.9978

0.E+00

1.E+04

2.E+04

3.E+04

4.E+04

5.E+04

6.E+04

7.E+04

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Electric field (V / micrometer)

Col

lect

ed e

lect

rons

per

bea

m

part

icle

detect 253 and 2 GhZ linear Amplifier

Poly. (detect 253 and 2 GhZ linear Amplifier)

Time response of CdTe samplesbefore irradiation: sample 172REF

after irradiation sample 172N (10^15 n/cm2)

-9

-7

-5

-3

-1

-10 -5 0 5 10 15 20 25 30 35 40

ns

Out

put s

igna

l (A

.U)

172REF

172N

Laser-test (1047 nm, 60 ps FWHM, 500µJ/CM2)

Irradiation test at 10Irradiation test at 101515 neutrons/cm2neutrons/cm2


Detector box for OnDetector box for On--line line measurement during measurement during

irradiation testirradiation test


SetSet--up for Onup for On--line line measurement during irradiation measurement during irradiation

testtest


Irradiation TestsIrradiation Testsnn Triga type reactor Triga type reactor

(Ljubljana,Slovenia)(Ljubljana,Slovenia)ll Irradiation stepsIrradiation stepsÀÀ 101013 13 n/cmn/cm2 2

ÁÁ 101015 15 n/cmn/cm2 2

ÂÂ 101016 16 n/cmn/cm2 2 activation of all setactivation of all set--upupÃÃ next step 10next step 101717n/cmn/cm22


Carrier lifetime measurementCdTe detector n:389 (441 microns /400 Volts)

-1.00

-0.50

0.00-10 -5 0 5 10 15 20 25 30

Time in nanosecond

Am

pli

tud

e o

f th

e s

ign

al

(A.U

)li

ne

ar

sc

ale

After 10^16 n/cm2before irradiation

Irradiation testIrradiation testat 10at 1016 16 n/cmn/cm22


Log of the Amplitude of the signal decay in linear scale

CdTe detector n: 389 (441 microns / 400 Volts)

y = -0.7252x + 0.6431

y = -0.358x - 0.5418y = -0.7072x + 0.6798

y = -0.3542x - 0.6078

-7.5

-6.5

-5.5

-4.5

-3.5

-2.5

-1.5

-0.5

0 5 10 15 20

Time in nanosecond

Log(

AB

S (

Am

plitu

de))

(Fast) after 10^16 n/cm2(Slow) after10^16 n/cm2(Fast) before irradiation(Slow) before irradiationLinear ((Fast) after 10^16 n/cm2)Linear ((Slow) after10^16 n/cm2)Linear ((Fast) before irradiation)Linear ((Slow) before irradiation)

Carrier life timebefore irradiationslow = 2.82 ns fast = 1.41 nsafter 10^16n/cm2slow = 2.8 ns fast = 1.38 ns

Carrier lifetime measurementCarrier lifetime measurementafter 10after 101616 n/cmn/cm22


ConclusionConclusionnn The signal response of ThickThe signal response of Thick--polycrystallinepolycrystalline--CdTe is CdTe is

even better than required for 40 MHz event rate even better than required for 40 MHz event rate measurement.measurement.

nn The sensitivity above 100 electrons per micron/MIP The sensitivity above 100 electrons per micron/MIP and the fast 50 ohmsand the fast 50 ohms--preamplifier allows simple preamplifier allows simple design.design.

nn Test with Beam confirms the laser and SR90 test.Test with Beam confirms the laser and SR90 test.

nn IrradiationIrradiation--test up to 10test up to 1016 16 Neutrons/cmNeutrons/cm22 have have demonstrated no significant loss in speed.demonstrated no significant loss in speed.

nn New experiment up to 10New experiment up to 101717 n/cmn/cm22 is in preparation. is in preparation.


ReferencesReferences

ll W.C. Turner, "Instrumentation for the Absorbers in the LowW.C. Turner, "Instrumentation for the Absorbers in the Low--beta Insertions of the LHC,"beta Insertions of the LHC," LBNLLBNL--4218042180, Aug. 1988., Aug. 1988.

ll R. Jones R. Jones et al.,et al., “Real time display of the vertical beam sizes “Real time display of the vertical beam sizes in LEP using the BEXE Xin LEP using the BEXE X--ray detector and fast VMEray detector and fast VME--based based computers”,computers”, ProcProc. DIPAC’99,. DIPAC’99, DaresburyDaresbury, UK, 16, UK, 16--18 May, 18 May, 1999.1999.

ll E.E. RossaRossa et al, "et al, " CdTe photoconductorsCdTe photoconductors for LHC luminosity for LHC luminosity monitoring” monitoring” http://documents.http://documents.cerncern..chch/archive/electronic//archive/electronic/cerncern//preprintpreprintss//slsl//slsl--20002000--068.068.pdfpdf

ll M. M. PlacidiPlacidi, E., E. RossaRossa, H., H. SchmicklerSchmickler, “A, “A CdTeCdTe Detector forDetector forMuonMuon Transverse Profile Measurements”, CERNTransverse Profile Measurements”, CERN--NUFACTNUFACT--Note 068, Feb. 2001. Note 068, Feb. 2001. http://http://slsl.web..web.cerncern..chch/SL/Publications/bi2001/SL/Publications/bi2001--009.009.pdfpdf


AcknowledgementAcknowledgement

nn A. Million, O. Peyret, G. Rumen, M. A. Million, O. Peyret, G. Rumen, M. Magnat from LetiMagnat from Leti

nn E. Berdermann from GSIE. Berdermann from GSInn P. Legros, S. Hutchins, G. Burtin P. Legros, S. Hutchins, G. Burtin

and Jand J--P. Bindi from CERNP. Bindi from CERN

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