R17 Smart Plug - toshiba-semicon- · PDF file AC Outlet AC Inlet Outlet Control AC Outlet AC...

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Transcript of R17 Smart Plug - toshiba-semicon- · PDF file AC Outlet AC Inlet Outlet Control AC Outlet AC...

  • Solution Proposal by Toshiba

    © 2019 Toshiba Electronic Devices & Storage Corporation

    Smart Plug R17

  • © 2019 Toshiba Electronic Devices & Storage Corporation

    Toshiba Electronic Devices & Storage Corporation provides comprehensive device solutions to customers developing new products by applying its thorough understanding of the systems acquired through the analysis of basic product designs.

  • Block Diagram

    © 2019 Toshiba Electronic Devices & Storage Corporation

  • 4© 2019 Toshiba Electronic Devices & Storage Corporation

    Smart Plug Overall block diagram

    AC-DC Converter

    AC Inlet

    LDO

    AC OutletKey Switch

    Wireless Control

    TVS

    Power Supply

    Mechanical Relay

    AC Switch

    Wireless Module SBD

    MCU MOSFET

    TVS

  • 5© 2019 Toshiba Electronic Devices & Storage Corporation

    Outlet Control Key Switch

    Wireless Control

    MCU

    TVS

    TVS

    Wireless Module

    Smart Plug Detail of wireless / key input section

    Criteria for device selection - For components such as key switches and

    antennas which may be exposed to the outside environment, protection circuitry may be required.

    Proposal from Toshiba - Prevent circuit malfunctions by

    absorbing electrostatic discharge (ESD) from external terminals TVS diodes

    1

    1

    1

    ※ Click on the blue circled numbers above to view detailed descriptions.

  • 6© 2019 Toshiba Electronic Devices & Storage Corporation

    AC Outlet

    AC Inlet Outlet Control

    AC Outlet

    AC Inlet

    Outlet Control

    Photo relay

    MOSFET

    SBD

    Smart Plug Detail of AC switch section (1)

    Criteria for device selection - Schottky barrier diodes are used for surge

    protection of inductive loads such as relays.

    - Low power AC switches can be realized using photo relays.

    Proposal from Toshiba - Diodes for surge current protection

    Schottky barrier diodes - Small package, low on-resistance

    MOSFET Small-signal MOSFETs

    - Designed for high AC withstand voltage Photo relays

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    3

    4

    AC switch implementation using mechanical relays

    AC switch implementation using photo relays (under 0.3A)

    2

    3

    4

    ※ Click on the blue circled numbers above to view detailed descriptions.

    Control of commercial AC requires regulatory compliance for each country.

  • 7© 2019 Toshiba Electronic Devices & Storage Corporation

    AC Outlet

    Photovoltaic Coupler AC Inlet

    Outlet Control

    MOSFET

    Triac Output Photocoupler AC Inlet

    Outlet Control

    AC Outlet

    Smart Plug Detail of AC switch section (2)

    Criteria for device selection - Insulated AC switch can be realized using

    a MOSFET driven by a photovoltaic coupler.

    - AC switch can be realized using a triac driven by a triac-output coupler.

    Proposal from Toshiba - Photocoupler with direct MOSFET drive

    Photovoltaic output photocoupler - Ideal for high-efficiency power

    switching DTMOSIV MOSFET(super-junction type)

    - Suitable for AC controlled photocoupler Triac-output photocoupler

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    6

    AC switch example using photovoltaic coupler and MOSFET (for currents around 0.3A~1A)

    AC switch example using triac and triac-output photovoltaic coupler (for currents around 1A~)

    7

    5 6

    7

    ※ Click on the blue circled numbers above to view detailed descriptions. Control of commercial AC requires regulatory compliance for each country.

  • 8© 2019 Toshiba Electronic Devices & Storage Corporation

    AC-DC Converter

    AC Inlet

    LDO

    Power for AC Switch

    Power for Wireless Control

    Smart Plug Detail of power supply

    Criteria for device selection - Rectifier diodes for AC-DC power supplies

    generally require high reverse voltages and short reverse recovery time.

    - For power supply ICs which include analog circuitry such as wireless, low noise is a requirement for stable operation.

    Proposal from Toshiba - High reverse voltage, short reverse

    recovery time Rectifier diodes

    - Resistant to power supply noise Small surface mount LDO regulator

    8

    9

    8

    9

    ※ Click on the blue circled numbers above to view detailed descriptions.

  • Recommended Devices

    © 2019 Toshiba Electronic Devices & Storage Corporation

  • 10© 2019 Toshiba Electronic Devices & Storage Corporation

    Device solutions to address customer needs

    For Smart Plug designs, basic solutions are proposed from the three perspectives of: 「AC insulation」 「High set efficiency」 「Board miniaturization」

    High voltage ・

    Insulation Small

    packaging

    High Efficiency

    ・ Low loss

    AC insulation High set efficiency Board miniaturization

  • 11© 2019 Toshiba Electronic Devices & Storage Corporation

    Device solutions to address customer needs

    High voltage ・

    Insulation

    Efficiency ・

    Low loss Small

    packaging

    TVS diode Schottky barrier diode Small signal MOSFET Photo relay Photovoltaic output photo coupler DTMOS Ⅳ power MOSFET Triac output photo coupler Rectifier diode Small surface mount LDO regulator

  • Line up

    Value provided

    12© 2019 Toshiba Electronic Devices & Storage Corporation

    TVS diode DF2B7ASL / DF2S14P1CT / DF2B5M4SL / DF2B6M4SL

    Protects devices and prevents circuit malfunctions by absorbing ESD entering from external terminals.

    Increase ESD pulse absorption

    Suppress ESD energy by means of low clamp voltage

    High density mounting

    Compared to our earlier products, ESD absorption is improved (operating resistance reduced by 50 %) .High signal quality and protection assured by means of low operating resistance and low capacitance.

    Using original technology, provides full protection of connected circuit components.

    Wide selection of packages available (single / multi flow-through).

    Part number DF2B7ASL DF2S14P1CT DF2B5M4SL DF2B6M4SL

    Package SL2 CST2 SL2 SL2

    VESD [kV] ±30 ±30 ±20 ±20

    VRWM (Max) [V] 5.5 12.6 3.6 5.5

    Ct (Typ.) [pF] 8.5 40 0.2 0.2

    RDYN (Typ.) [Ω] 0.2 0.5 0.5 0.5

    ◆Return to Block Diagram TOP

    Note: This device is for ESD protection only and cannot be used for other purposes such as, but not limited to, constant voltage source circuits.

    Uni-directional

    Uni-directional Bi-directional

    High voltage・Insulation

    Efficiency ・

    Low loss

    Small packaging

  • Line up

    Value provided

    13© 2019 Toshiba Electronic Devices & Storage Corporation

    Part number CUS01 CUS02

    Package US-FLAT US-FLAT

    VRRM (Max) [V] 30 30

    IF(AV) (Max) [A] 1.0 1.0

    VFM (Max) [V] 0.37 0.45

    IRRM (Max) [mA] 1.5 0.1

    Schottky barrier diode (SBD) CUS01 / CUS02

    Fast, low-loss, small package and ideal for many applications.

    Fast switching High reverse voltage Small package

    For fast switching applications. High repetitive peak reverse voltage (VRRM) (CUS01: rated at 30 V)

    Small package form factor allows high density mounting.

    Forward voltage (V) Average forward current IF (AV) (A)

    Fo rw

    ar d

    cu rre

    nt I F

    (A )

    Av er

    ag e

    fo rw

    ar d

    po w

    er P

    F ( A

    V) (

    W )

    High voltage・Insulation

    Efficiency ・

    Low loss

    Small packaging

    ◆Return to Block Diagram TOP

  • Line up

    Value provided

    14© 2019 Toshiba Electronic Devices & Storage Corporation

    Part number SSM3K36FS SSM3K56FS

    Package SSM SSM

    VDSS [V] 20 20 ID [A] 0.5 0.8

    PD [W] 0.15 0.15 RDS(ON) (Max) [Ω] 0.63 0.235

    Polarity N-ch N-ch

    Small-signal MOSFET SSM3K36FS / SSM3K56FS

    Ideal for power management switching, with small package dimensions.

    Low voltage operation Strong ESD tolerance Low ON resistance

    Can operate at VDS = 1.5 V ESD (HBM) tolerance up to 2 kV By reducing source-drain on-resistance, heat radiation and power dissipation is minimized.

    3 D

    ra in

    c ur

    re nt

    I D (m

    A)

    D ra

    in c

    ur re

    nt I D

    (m A)

    Drain-source voltage VDS (V) Gate-source voltage VGS (V)

    High voltage・Insulation

    Efficiency ・

    Low loss

    Small packaging

    ◆Return to Block Diagram TOP

  • Line up

    Value provided

    15© 2019 Toshiba Electronic Devices & Storage Corporation

    Part number TLP3549

    Package DIP8

    VOFF [V] 600

    VDD (Max) [V] 480

    IF (Max) [mA] 25

    ION (Max) [A] 0.6

    BVS (Max) [Vrms] 2500

    Photo relay TLP3549

    8-pin DIP photo relay using a photo MOSFET optically connected to an infrared LED.

    Low on-resistance RON W