Quantum Hall Effect and Fractional Quantum Hall Effect

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Quantum Hall Effect and Fractiona Quantum Hall Effect

description

Quantum Hall Effect and Fractional Quantum Hall Effect. the Lorentz force. Hall effect and magnetoresistance. Edwin Herbert Hall (1879): discovery of the Hall effect. the Hall effect is the electric field developed across two faces of a conductor in the direction j ×H - PowerPoint PPT Presentation

Transcript of Quantum Hall Effect and Fractional Quantum Hall Effect

Page 1: Quantum Hall Effect and Fractional  Quantum Hall Effect

Quantum Hall Effect and Fractional Quantum Hall Effect

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Hall effect and magnetoresistanceEdwin Herbert Hall (1879): discovery of the Hall effect

HvF ce

Lthe Lorentz force

in equilibrium jy = 0 → the transverse field (the Hall field) Ey due to the accumulated charges balances the Lorentz force

quantities of interest:magnetoresistance (transverse magnetoresistance)

Hall (off-diagonal) resistance

( ) xxx

x

yyx

x

yH

x

EHj

EjE

Rj H

RH → measurement of the sign of the carrier charge RH is positive for positive charges and negative for negative charges

the Hall effect is the electric field developed across twofaces of a conductorin the direction j×Hwhen a current j flows across a magnetic field H

( ) xxx

x

yyx

x

VR H RI

VR

I

resistivity

Hall resistivity

the Hall coefficient

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mceH

ppeE

ppeE

mce

dtd

ce

c

yxcy

xycx

0

0

1

1

pHpEp

HvEfforce acting on electron

equation of motionfor the momentum per electron

in the steady state px and py satisfy

cyclotron frequencyfrequency of revolutionof a free electron in the magnetic field H

at H = 0.1 T0yj xx

cy j

necHjE

0

multiply by

yxcy

xycx

jjE

jjE

0

0

mne

mpnej

mne

2

0

/

the Drudemodel DCconductivityat H=0

Hrcerm cc 2

weak magnetic fields – electrons can complete only a small part of revolution between collisionsstrong magnetic fields – electrons can complete many revolutions between collisions1

1

c

c

1cj is at a small angle f to E f is the Hall angle tan f c

RH → measurement of the density nec

RH1

xx Ej 0 the resistance does not depend on H

GHzcc 1~

2

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TGHzcc /10~

2

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Higher Mobility= fewer localized states

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Single electron in thelowest Landau level Filled lowest Landau level

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Modulation doping and high mobility heterostructures

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This was just the beginning of high mobilities

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At high magnetic fields, electron orbitssmaller than electron separation

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new quantum Hall state found atfractional filling factor 1/3

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Even higher mobilitiesresult in even morefractional quantum Hallstates

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Uncorrelated ? = 1/3 state

Correlated ? = 1/3 state

Whole new concept of a “Composite Fermion”