Quality Factor (or Q) Comb-Drive Resonator in Actionee245/fa10/lectures/Lec...Comb-Drive Resonator...

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1 EE 245 : Introduction to MEMS Lecture 14m : Mechanics of Materials CTN 10/12/10 Copyright © 2010 Regents of the University of California EE C245 : Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 30 Quality Factor (or Q) Measure of the frequency selectivity of a tuned circuit Definition : Example : series LCR circuit Example : parallel LCR circuit dB 3 Cycle Per Lost Energy Cycle Per Energy Total BW f Q o = = ( ) ( ) CR R L Z Z Q o o ω ω 1 Re Im = = = ( ) ( ) LG G C Y Y Q o o ω ω 1 Re Im = = = BW -3dB f o f EE C245 : Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 31 Comb-Drive Resonator in Action Below : fully integrated micromechanical resonator oscillator using a MEMS-last integration approach EE C245 : Introduction to MEMS Design LecM 7 Selective Low-Loss Filters: Need Q In resonator-based filters: high tank Q low insertion loss At right : a 0.1% bandwidth, 3- res filter @ 1 GHz (simulated) heavy insertion loss for resonator Q < 10,000 -40 -35 -30 -25 -20 -15 -10 -5 0 998 999 1000 1001 1002 Frequency [MHz] Transmission [dB] Tank Q 30,000 20,000 10,000 5,000 4,000 Increasing Insertion Loss EE C245 : Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 33 Main Function : provide a stable output frequency Difficulty : superposed noise degrades frequency stability ω ω ο i v o i A Frequency-Selective Tank Sustaining Amplifier o v Ideal Sinusoid: ( ) = t o f Vo t o v π 2 sin Real Sinusoid: ( ) ( ) ( ) + + = t t o f t Vo t o v θ π ε 2 sin ω ω ο ω ω ο =2π/T O T O Zero-Crossing Point Tighter Spectrum Oscillator: Need for High Q Higher Q

Transcript of Quality Factor (or Q) Comb-Drive Resonator in Actionee245/fa10/lectures/Lec...Comb-Drive Resonator...

Page 1: Quality Factor (or Q) Comb-Drive Resonator in Actionee245/fa10/lectures/Lec...Comb-Drive Resonator in Action •Below: fully integrated micromechanical resonator oscillator using a

1

EE 245: Introduction to MEMSLecture 14m: Mechanics of Materials

CTN 10/12/10

Copyright © 2010 Regents of the University of California

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 30

Quality Factor (or Q)•Measure of the frequency selectivity of a tuned circuit

• Definition:

• Example: series LCR circuit

• Example: parallel LCR circuit

dB3CyclePer Lost EnergyCyclePer Energy Total

BWfQ o==

( )( ) CRR

LZZQ

o

o

ωω 1

ReIm

===

( )( ) LGG

CYYQ

o

o

ωω 1

ReIm

===

BW-3dB

fo f

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 31

Comb-Drive Resonator in Action

• Below: fully integrated micromechanical resonator oscillator using a MEMS-last integration approach

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 32

Selective Low-Loss Filters: Need Q

• In resonator-based filters: high tank Q ⇔ low insertion loss

• At right: a 0.1% bandwidth, 3-res filter @ 1 GHz (simulated)

heavy insertion loss for resonator Q < 10,000 -40

-35

-30

-25

-20

-15

-10

-5

0

998 999 1000 1001 1002

Frequency [MHz]

Tran

smis

sion

[dB

]

Tank Q30,00020,00010,000

5,0004,000

Increasing Insertion

Loss

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 33

•Main Function: provide a stable output frequency• Difficulty: superposed noise degrades frequency stability

ωωο

ivoi

A

Frequency-SelectiveTank

SustainingAmplifier

ov

Ideal Sinusoid: ( ) ⎟⎠⎞⎜

⎝⎛= tofVotov π2sin

Real Sinusoid: ( ) ( ) ( )⎟⎠⎞⎜

⎝⎛⎟

⎠⎞⎜

⎝⎛ ++= ttoftVotov θπε 2sin

ωωο

ωωο=2π/TO

TO

Zero-Crossing Point

Tighter SpectrumTighter Spectrum

Oscillator: Need for High Q

Higher QHigher Q

Page 2: Quality Factor (or Q) Comb-Drive Resonator in Actionee245/fa10/lectures/Lec...Comb-Drive Resonator in Action •Below: fully integrated micromechanical resonator oscillator using a

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EE 245: Introduction to MEMSLecture 14m: Mechanics of Materials

CTN 10/12/10

Copyright © 2010 Regents of the University of California

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 34

• Problem: IC’s cannot achieve Q’s in the thousandstransistors consume too much power to get Qon-chip spiral inductors Q’s no higher than ~10off-chip inductors Q’s in the range of 100’s

•Observation: vibrating mechanical resonances Q > 1,000• Example: quartz crystal resonators (e.g., in wristwatches)

extremely high Q’s ~ 10,000 or higher (Q ~ 106 possible)mechanically vibrates at a distinct frequency in a thickness-shear mode

Attaining High Q

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 35

Energy Dissipation and Resonator Q

supportviscousTEDdefects QQQQQ11111 +++=

Anchor LossesAnchor Losses

Material Defect Losses

Material Defect Losses Gas DampingGas Damping

Thermoelastic Damping (TED)Thermoelastic Damping (TED)

Bending CC-Beam

CompressionHot Spot

Tension Cold Spot Heat Flux(TED Loss)

Elastic Wave Radiation(Anchor Loss)

At high frequency, this is our big problem!

At high frequency, this is our big problem!

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 36

Thermoelastic Damping (TED)

•Occurs when heat moves from compressed parts to tensioned parts → heat flux = energy loss

QfT

21)()( =ΩΓ=ς

pCTETρ

α4

)(2

⎥⎦

⎤⎢⎣

+=Ω 222)(

fffff

TED

TEDo

22 hCKf

pTED ρ

π=

Bending CC-Beam

CompressionHot Spot

Tension Cold Spot Heat Flux(TED Loss)

ζ = thermoelastic damping factorα = thermal expansion coefficientT = beam temperatureE = elastic modulusρ = material densityCp = heat capacity at const. pressureK = thermal conductivityf = beam frequencyh = beam thicknessfTED = characteristic TED frequency

h

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 37

TED Characteristic Frequency

• Governed byResonator dimensionsMaterial properties

22 hCKf

pTED ρ

π=

ρ = material densityCp = heat capacity at const. pressureK = thermal conductivityh = beam thicknessfTED = characteristic TED frequency

Critical D

amping

Fac

tor,

ζ

Relative Frequency, f/fTED

Q

[from Roszhart, Hilton Head 1990]

Peak where Q is minimizedPeak where Q is minimized

Page 3: Quality Factor (or Q) Comb-Drive Resonator in Actionee245/fa10/lectures/Lec...Comb-Drive Resonator in Action •Below: fully integrated micromechanical resonator oscillator using a

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EE 245: Introduction to MEMSLecture 14m: Mechanics of Materials

CTN 10/12/10

Copyright © 2010 Regents of the University of California

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 38

Q vs. Temperature

Quartz Crystal Aluminum Vibrating Resonator

Q ~5,000,000 at 30K

Q ~5,000,000 at 30K

Q ~300,000,000 at 4KQ ~300,000,000 at 4K

Q ~500,000 at 30K

Q ~500,000 at 30K

Q ~1,250,000 at 4KQ ~1,250,000 at 4K

Even aluminum achieves exceptional Q’s at

cryogenic temperatures

Even aluminum achieves exceptional Q’s at

cryogenic temperatures

Mechanism for Q increase with decreasing temperature thought to be linked to less hysteretic motion of material defects

less energy loss per cycle

Mechanism for Q increase with decreasing temperature thought to be linked to less hysteretic motion of material defects

less energy loss per cycle

[from Braginsky, Systems With

Small Dissipation]

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 39

Output

Input

Input

Output

Support Beams

Wine Glass Disk Resonator

R = 32 μm

Anchor

Anchor

Resonator DataR = 32 μm, h = 3 μmd = 80 nm, Vp = 3 V

Resonator DataR = 32 μm, h = 3 μmd = 80 nm, Vp = 3 V

-100

-80

-60

-40

61.325 61.375 61.425

fo = 61.37 MHzQ = 145,780

Frequency [MHz]

Unm

atch

ed T

rans

mis

sion

[dB

]

Polysilicon Wine-Glass Disk Resonator

[Y.-W. Lin, Nguyen, JSSC Dec. 04]

Compound Mode (2,1)

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 40

-100-98-96-94-92-90-88-86-84

1507.4 1507.6 1507.8 1508 1508.2

1.51-GHz, Q=11,555 NanocrystallineDiamond Disk μMechanical Resonator

• Impedance-mismatched stem for reduced anchor dissipation

•Operated in the 2nd radial-contour mode•Q ~11,555 (vacuum); Q ~10,100 (air)• Below: 20 μm diameter disk

PolysiliconElectrode R

Polysilicon Stem(Impedance Mismatched

to Diamond Disk)

GroundPlane

CVD DiamondμMechanical Disk

Resonator Frequency [MHz]

Mix

ed A

mpl

itude

[dB

]

Design/Performance:R=10μm, t=2.2μm, d=800Å, VP=7Vfo=1.51 GHz (2nd mode), Q=11,555

fo = 1.51 GHzQ = 11,555 (vac)Q = 10,100 (air)

[Wang, Butler, Nguyen MEMS’04]

Q = 10,100 (air)

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 41

Disk Resonator Loss Mechanisms

Disk Stem

Nodal Axis

Strain Energy Flow No motion along

the nodal axis, but motion along the finite width

of the stem

No motion along the nodal axis,

but motion along the finite width

of the stem

Stem Heightλ/4 helps

reduce loss, but not perfect

λ/4 helps reduce loss,

but not perfect

Substrate Loss Thru Anchors

Substrate Loss Thru Anchors

Gas Damping

Gas Damping

Substrate

Hysteretic Motion of

Defect

Hysteretic Motion of

Defect

e-

Electronic Carrier Drift Loss

Electronic Carrier Drift Loss

(Not Dominant in Vacuum)

(Dwarfed By Substrate Loss)

(Dwarfed By Substrate Loss)

(Dominates)

Page 4: Quality Factor (or Q) Comb-Drive Resonator in Actionee245/fa10/lectures/Lec...Comb-Drive Resonator in Action •Below: fully integrated micromechanical resonator oscillator using a

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EE 245: Introduction to MEMSLecture 14m: Mechanics of Materials

CTN 10/12/10

Copyright © 2010 Regents of the University of California

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 42

MEMS Material Property Test Structures

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 43

Stress Measurement Via Wafer Curvature

• Compressively stressed film →bends a wafer into a convex shape

• Tensile stressed film → bends a wafer into a concave shape

• Can optically measure the deflection of the wafer before and after the film is deposited

• Determine the radius of curvature R, then apply:

RthE

6

2′=σ

σ = film stress [Pa]E′ = E/(1-ν) = biaxial elastic modulus [Pa]h = substrate thickness [m]t = film thicknessR = substrate radius of curvature [m]

Si-substrate

Laser

Detector

MirrorxScan the

mirror θ

θ

xSlope = 1/R

h

t

R

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 44

MEMS Stress Test Structure

• Simple Approach: use a clamped-clamped beam

Compressive stress causes bucklingArrays with increasing length are used to determine the critical buckling load, where

Limitation: Only compressive stress is measurable

2

22

3 LEh

criticalπσ −=

E = Young’s modulus [Pa]I = (1/12)Wh3 = moment of inertiaL, W, h indicated in the figure

L

W

h = thickness

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 45

More Effective Stress Diagnostic

• Single structure measures both compressive and tensile stress

• Expansion or contraction of test beam → deflection of pointer

• Vernier movement indicates type and magnitude of stress

Expansion → Compression

Contraction → Tensile

Page 5: Quality Factor (or Q) Comb-Drive Resonator in Actionee245/fa10/lectures/Lec...Comb-Drive Resonator in Action •Below: fully integrated micromechanical resonator oscillator using a

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EE 245: Introduction to MEMSLecture 14m: Mechanics of Materials

CTN 10/12/10

Copyright © 2010 Regents of the University of California

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 46

Output

Input

Input

Output

Support Beams

Wine Glass Disk Resonator

R = 32 μm

Anchor

Anchor

Resonator DataR = 32 μm, h = 3 μmd = 80 nm, Vp = 3 V

Resonator DataR = 32 μm, h = 3 μmd = 80 nm, Vp = 3 V

-100

-80

-60

-40

61.325 61.375 61.425

fo = 61.37 MHzQ = 145,780

Frequency [MHz]

Unm

atch

ed T

rans

mis

sion

[dB

]

Q Measurement Using Resonators

[Y.-W. Lin, Nguyen, JSSC Dec. 04]

Compound Mode (2,1)

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 47

Folded-Beam Comb-Drive Resonator

• Issue w/ Wine-Glass Resonator: non-standard fab process• Solution: use a folded-beam comb-drive resonator

8.3 Hz

3.8500,342

=Q

fo=342.5kHzQ=41,000

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 48

Comb-Drive Resonator in Action

• Below: fully integrated micromechanical resonator oscillator using a MEMS-last integration approach

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 49

Folded-Beam Comb-Drive Resonator

• Issue w/ Wine-Glass Resonator: non-standard fab process• Solution: use a folded-beam comb-drive resonator

8.3 Hz

3.8500,342

=Q

fo=342.5kHzQ=41,000

Page 6: Quality Factor (or Q) Comb-Drive Resonator in Actionee245/fa10/lectures/Lec...Comb-Drive Resonator in Action •Below: fully integrated micromechanical resonator oscillator using a

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EE 245: Introduction to MEMSLecture 14m: Mechanics of Materials

CTN 10/12/10

Copyright © 2010 Regents of the University of California

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 50

Measurement of Young’s Modulus

• Use micromechanical resonatorsResonance frequency depends on EFor a folded-beam resonator: 213)(4

⎥⎥⎦

⎢⎢⎣

⎡=

eqo M

LWEhfResonance Frequency =

LW

h = thickness

Young’s modulus

Equivalent mass

• Extract E from measured frequency fo

•Measure fo for several resonators with varying dimensions

• Use multiple data points to remove uncertainty in some parameters

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 51

Anisotropic Materials

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 52

Elastic Constants in Crystalline Materials

• Get different elastic constants in different crystallographic directions → 81 of them in all

Cubic symmetries make 60 of these terms zero, leaving 21 of them remaining that need be accounted for

• Thus, describe stress-strain relations using a 6x6 matrix

⎥⎥⎥⎥⎥⎥⎥⎥

⎢⎢⎢⎢⎢⎢⎢⎢

⎥⎥⎥⎥⎥⎥⎥⎥

⎢⎢⎢⎢⎢⎢⎢⎢

=

⎥⎥⎥⎥⎥⎥⎥⎥

⎢⎢⎢⎢⎢⎢⎢⎢

xy

zx

yz

z

y

x

xy

zx

yz

z

y

x

CCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCC

γγγεεε

τττσσσ

665646362616

565545352515

464544342414

363534332313

262524232212

161514131211

Stiffness CoefficientsStresses StrainsEE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 53

Stiffness Coefficients of Silicon

• Due to symmetry, only a few of the 21 coefficients are non-zero

•With cubic symmetry, silicon has only 3 independent components, and its stiffness matrix can be written as:

⎥⎥⎥⎥⎥⎥⎥⎥

⎢⎢⎢⎢⎢⎢⎢⎢

⎥⎥⎥⎥⎥⎥⎥⎥

⎢⎢⎢⎢⎢⎢⎢⎢

=

⎥⎥⎥⎥⎥⎥⎥⎥

⎢⎢⎢⎢⎢⎢⎢⎢

xy

zx

yz

z

y

x

xy

zx

yz

z

y

x

CC

CCCCCCCCCC

γγγεεε

τττσσσ

66

55

44

332313

232212

131211

000000000000000000000000

whereC11 = 165.7 GPaC12 = 63.9 GPaC44 = 79.6 GPa

Page 7: Quality Factor (or Q) Comb-Drive Resonator in Actionee245/fa10/lectures/Lec...Comb-Drive Resonator in Action •Below: fully integrated micromechanical resonator oscillator using a

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EE 245: Introduction to MEMSLecture 14m: Mechanics of Materials

CTN 10/12/10

Copyright © 2010 Regents of the University of California

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 54

Young’s Modulus in the (001) Plane

[units = 100 GPa]

[units

= 1

00 G

Pa]

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 55

Poisson Ratio in (001) Plane

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 56

Anisotropic Design Implications

• Young’s modulus and Poisson ratio variations in anisotropic materials can pose problems in the design of certain structures

• E.g., disk or ring resonators, which rely on isotropic properties in the radial directions

Okay to ignore variation in RF resonators, although some Q hit is probably being taken

• E.g., ring vibratory rate gyroscopes

Mode matching is required, where frequencies along different axes of a ring must be the sameNot okay to ignore anisotropic variations, here Ring Gyroscope

Drive AxisDrive Axis

Sense

Axis

Sense

Axis

Wine-Glass Mode Disk