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Qualcomm Snapdragon 800,

TSMC 28HPM Process

Found in the Samsung

Galaxy S4 LTE-A Major functional blocks

• Quad-core Krait 400 CPU (2.3 GHz)

• Adreno 330 GPU (450 MHz)

• 3G/4G LTE modem

• Die size (edge seal) 11.14 mm x 10.62 mm

(118.3 mm2)

• SRAM cell area 0.13 µm2

• TSMC 28HPM (High Performance Mobile)

Process

PMOS transistor

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$5,000 Functional Analysis Report Qualcomm MSM8974 ARAGORN Snapdragon™ 800 Application Processor

$17,000 Front End of Line Structural Analysis Report Qualcomm MSM8974 TSMC 28 nm HPM CMOS process review

$2,500 Poly Die Photo Qualcomm HG11-N7440

$200 Die Photo Qualcomm HG11-N7440

Qualcomm Snapdragon 800 – Photos and Reports

2

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CHIPWORKS CONFIDENTIAL

All content © 2013, Chipworks Inc. All rights reserved.

$5,000 Functional Analysis Report Qualcomm MSM8974 ARAGORN Snapdragon™ 800 Application Processor

Qualcomm Snapdragon 800 – FAR

3

This report is a basic functional analysis (FAR) with costing of the Qualcomm MSM8974

Snapdragon 800 series application processor die, which is a quad core CPU Snapdragon

system-on-chip (SoC) for advanced smartphones.

This report contains the following detailed information:

• Package photographs, package X-rays, die photographs, and a delayered die photograph

with annotated functional blocks and memories

• Identification of major functional blocks on a polysilicon die photograph

• Table of functional block sizes and percentage of die utilization

• High resolution top metal and polysilicon die photographs delivered in the ICWorks Surveyor

• Measurement of vertical and horizontal dimensions of the major microstructural features

• Scanning electron microscope (SEM) cross-sectional micrographs of dielectric materials,

metallization, and transistors

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CHIPWORKS CONFIDENTIAL

All content © 2013, Chipworks Inc. All rights reserved.

$17,000 Front End of Line Structural Analysis Report Qualcomm MSM8974 TSMC 28 nm HPM CMOS process review

Qualcomm Snapdragon 800 – FEOL

4

This report is a front end of line structural analysis of the Qualcomm MSM8974 Snapdragon

800 application processor, built on 300 mm wafers using TSMC’s CMOS gate last high-k metal

gate (HKMG) process. Qualcomm describes the process as a high performance mobile (HPM)

28 nm process.

This report contains the following detailed information:

• Package photographs, package X-rays, die markings and an annotated die photograph

• Measurements of vertical and horizontal dimensions of the major microstructural features

• Transmission electron microscope (TEM) and scanning electron microscope (SEM) cross-

sectional micrographs of dielectric materials, metallization, and transistors

• Results of TEM-EDS analysis of metal interconnect and transistor structures

• Scanning capacitance microscopy (SCM) and secondary ion mass spectrometry (SIMS)

analyses of the wells and substrate

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