TOP > PVSEC-9 (1996) / Miyazaki, Japan

PVSEC-9 (1996) / Miyazaki, Japan

International PVSEC-9 Committees

Acknowledgement

Chairman's Message

Makoto Konagai

Foreword

Tadashi Saitoh

PVSEC AWARD

Yoshihiro Hamakawa

PVSEC SPECIAL AWARD

Tadashi Sasaki

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■ OPENING SESSION

OS-1

Japanese Policy for Introduction of Renewable Invited Energy Toward the Century of New Energy : the Japanese Effort

Y.AdachiAIST, MITI, Japan

OS-2

The Role of the Federal Government in Invited Technology Development

J. RannelsDOE, USA

OS-3

Industrial Development and Market Promotion Invited of Photovoltaics in Europe

W. PalzEU, Belgium

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■ Session A-I National Project-I

A-I-1

The Progress of R&D on PV Technology in the "New Sunshine Program"

K.MiyazawaAIST, MITI, Japan

A-I-2

Status & Perspective of Photovoltaics in Kprea

J. SongKorea Inst. of Energy Research, Korea

A-I-3

Market promotes R&D of PV in China

P. YuTianjin Inst. of Power Sources, P.R.China

A-I-4

Photovoltaic Applications in Thailand : Twenty Years of Planning and Experiences

K. KirtikaraKing Mongkut's Inst. of Tech. Thonburi, Thailand

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■ Session A-II National Project-II

A-II-1 Flat-Plate Solar Array (FSA) Project An Important Technology Transfer Success

W.T. Callaghan California Inst. of Tech., USA

A-II-2

The Photovoltaic Programme in India ; an Overview

E.V.R SastryMinistry of Non-Coven. Energy Sources, India

A-II-3

Research and Development Programs in Indonesia

W.W. Wenas, M.BarmawiInstitute Tech. of Bandung, Indonesia

A-II-5

Long Term Evaluation of New Technology Photovoltaic Modules

B. Hawkins, LJ. MuirheadTelstra Research Labs., Australia

A-II-6

The New PV-Programme in the Netherlands "The Success of Technology and Market Clusters"

J.T.N. Kimman, E.W. ter Horst, L.A. Verhoef, E.H. LysenNOVEM, The Netherlands

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■ Session A-III PV Modules and BOS Components

A-III-1

Site Dependence of the Energy Collection of PV Modules

K. BncherFraunhofer Inst. for Solar Energy Systems, Germany

A-III-2

An Evaluation on the Life Cycle of Photovoltaic Energy System Considering Production Energy of Off-Grade Silicon

K. Kato, A Murata, K. SakutaElectrotechnical Lab., Japan

A-III-3

Improvement of Performance in Redox Flow Batteries for PV Systems

I. Tsuda, K. Nozaki, K. Sakuta, K. Kurokawa*Electrotechnical Lab., Japan *Tokyo Univ. of Agri. and Tech., Japan

A-III-4

Integrated Circuits Offer Ideal Protection of Accumulators

P. Adelmann, S. Uhlmann*Steca GmbH, Germany *Uhlmann GmbH, Germany

A-III-5

Application of Photovoltaics to Para Rubber Plantation in Thailand

D. Kruangam, B. Ratwises, S. Thainoi, S. PanyakeowChulalongkorn Univ., Thailand

A-III-6

Smart Array Power Controllers: New DC PV System Design Element

B.E. O'MaraUniv. of New South Wales, Australia

A-III-7

A New Protective Method for Grid Connected Dispersed PV Systems to Detect Short Circuit Fault in Distribution Line

H. Kobayashi, K. TakigawaCentral Research Inst. of Electric Power Ind., Japan

A-III-8

A Photovoltaic System with Power Factor Correction and U.P.S Facility Utilizing DSP56001

S. Kim, G. Yu*, J. Song.Kongju National Univ., Korea *Korea Inst. Of Energy and Resources, Korea

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■ Session B-I High-Efficiency Single-Si Solar Cells and Applications

B-I-1Single Crystalline Silicon Solar Cell with pp+ Heterojunction of c-Si Substrate and μc-Si:H Film

M. Nishida, D. Shindo, Y. Komatsu, S. Okamoto, M. Kaneiwa, T. NammoriSharp Corp., Japan

B-I-2 Pilot Production of High Efficiency PERL Silicon Solar Cells for the World Solar Challenge Solar Car Race

J. Zhao, A Wang, D.M. Roche, S.R Wenham, M.AGreenUniv. of New South Wales, Australia

B-I-3

Solar Cells with Mesh Structured Emitter (MESC)

S.W. Glunz, W. WettlingFraunhofer-Inst. for Solar Energy Systems, Germany

B-I-4

Integrated High-Concentration PV; Near-Term Alternative for Low Cost Large-Scale Solar Electric Power

V. Garboushian, D. Roubideaux, S. YoonAmonix, Inc., USA

B-I-5

Thermal Process Optimization by Bulk Lifetime Monitoring and Fabrication of High-Efficiency c-Si Solar Cells

T. Uematsu, S. Muramatsu, K. Tsutsui, H. Ohtsuka, Y. Nagata., M, Sakamoto**, T. WarabisakoHitachi, Ltd., Japan *Hitachi Device Eng. Co. Ltd., Japan Hitachi ULSI Eng. Co. Ltd., Japan

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■ Session B-II Symposium B "Perspectives of High-Efficiency Poly-Si Solar Cells"

B-II-1

Recent Progress in Electromagnetic Casting for Polycrystalline Silicon Ingots

R. Kawamura, K. Sasatani, T. Onizuka, K. KanekoSumitomo SiTiX Corp., Japan

B-II-2

Production of Low Cost Si Sheets by Continuous Casting Method

T. Moritani, Y. Hatanaka, I. HideDaido Hoxan Inc., Japan

B-II-3

Crucible-Free Continuous Growth of Multicrystalline Silicon Ingots Applying Optical and RF Heating

A. Eyer, F. Haas, A. rutuber, H. Riemann*, H. Schilling*Fraunhofer-Inst. for Solar Energy Systems, Germany *Institut für Kristallzüchtung, Germany

B-II-4

Thin Silicon String Ribbon

R.L. Wallace, J.I. Hanoka, A. Rohatgi*, G. Crotty*Evergreen Solar, Inc., USA *Georgia Inst. of Tech., USA

B-II-5

Design, Fabrication, and Analysis of Greater than 18% Efficient Multicrystalline Silicon Cells

A. Rohatgi, S. NarasimhaGeorgia Inst. of Tech., USA

B-II-6

Overview of Solar Cell Technologies and Results on Multicrystalline Silicon Substrates

J. Nijs, S. Sivoththaman, J. Szlufcik, K.D. Clercq, F. Duerinckx, E.V. Kerschaever, R. Einhaus, J. Poortmans, T. Vermeulen, R. MertensIMEC, Belgium

B-II-7

Surface and Bulk Passivated Large Area Multicrystalline Silicon Solar Cells

K. Fukui, K. Okada, Y. Inomata, H. Takahashi, S. Fujii, Y. Fukawa, K. ShirasawaKyocera Corp., Japan

B-II-8

Towards High Efficiency Multicrystalline Silicon Solar Cells

R. Schindler, H. Lautenschlager, F. Lutz, C. Schetter, W. WettlingFraunhofer-Inst. for Solar Energy Systems, Germany

B-II-9

Development of Low Cost Production Technologies for Polycrystalline Silicon Solar Cells

T. Machida, A. Miyazawa, Y. Yokosawa, H. Nakaya, S. Tanaka, T. Nunoi, H. Kumada, M Murakami, T. TomitaSharp Corp., Japan

B-II-10

An Experimental Study on Stability and Characteristics of Hydrogen in Different Multicrystalline Silicon Material

H.E.A. Elgamel, J. Poortmans*, J. Nijs*, R. Mertens*, P. Fath**, M. Goetz+

Cairo Univ., Egypt *IMEC, Belgium **Univ. of Konstanz, Germany +Univ. of Neuchatel, Switzerland

B-II-11

Effect of Texture on Efficiency and Yield of Multi-Crystalline Silicon Solar Cells and Modules

R.A. Steeman, J.A. Eikelboom, W.C. Sinke, P-P. Michiels, B. van Straaten*, R.J.C. van Zolingen*Netherlands Energy Research Foundation ECN, The Netherlands *R&S Renew. Energy Systems, The Netherlands

B-II-12 Progress in a Novel High Throughput Mechanical Texturiation Technology for Highly Efficient Multicrystalline Silicon Solar Cells

P. Fath, C. Borst, C. Zechner, E. Bucher, G. Willeke, S. Narayanan*Univ. of Konstanz, Germany *Solarex Corp., USA

B-II-13

Surface Texturing of Large Area Multicrystalline Silicon Solar Cells Using Reactive Ion Etching Method

Y. Inomata, K. Fukui, K. ShirasawaKyocera Corp., Japan

B-II-14

Self-Aligned Selective Emitter Plasma-Etchback and Passivation Process for Screen-Printed Silicon Solar Cells

D.S. Ruby, C.B. Fleddermann*, M Roy**, S. Narayanan**Sandia National Labs., USA *Univ. of New Mexico, USA **Solarex Corp., USA

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■ Session C-I CdTe Thin Film Solar Cells

C-I-1

15.1% Highly Efficient Thin Film CdS/CdTe Solar Cell

S. Kumazawa, S. Shibutani, T. Nishino, T. Aramoto, H. Higuchi, T. Arita, A. Hanafusa, K. Omura, M Murozono, H. Takakura*Matsushita Battery Ind. Co., Ltd., Japan *Ritsumeikan Univ., Japan

C-I-2

Interfacial Mixed-Crystal Layer in CdS/CdTe Heterostructure Elucidated by Electroreflectance Spectroscopy

T. Toyama, T. Yamamoto, H. OkamotoOsaka Univ., Japan

C-I-3

Development of Thin-Film CdTe Photovoltaics

R.C. Powell, R.A. Sasala, G. Dorer, H. McMasterSolar Cells, Inc., USA

C-I-4

Improving Junction Formation Procedure for Low Temperature Deposited CdS/CdTe Solar Cells

T. Takamoto, T. Agui, H. Kurita, M. OhmoriJapan Energy Corp., Japan

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■ Session C-II Symposium E "High Efficiency CIS-Based Thin Film Solar Cells and Modules"

C-II-1

Towards Efficient CIGS Thin Film Photovoltaic Modules

H.W. Schock, R Herberholz, V. Nadenau, T. Waiter, B. Dimmler.Univ. of Stuttgart, Germany *Center for Solar Energy and Hydrogen Research, Germany

C-II-2

Issues on the Chalcopyrite/Defect Chalcopyrite Junction Model for High Efficiency Cu(In,Ga)Se2 Solar Cells

M.A Contreras, H. Wiesner, J. Tuttle, K. Ramanathan, R. Noufi National Renewable Energy Lab., USA

C-II-3

Microstructural Characterization of High Efficiency Cu(In,Ga)Se2 Solar Cells

T. WadaMatsushita Electric Ind. Co., Ltd., Japan

C-II-4

High Efficiency CIGS Solar Cells by Coevaporation Method

L. StoltUppsala Univ., Sweden

C-II-5

Improved Compositional Flexibility for Cu(In,Ga)Se2-Based Thin Film Solar Cells by Sodium Control Technique

T. Nakada, H. Ohbo, M Fukuda, A KuniokaAoyama Gakuin Univ., Japan

C-II-6

Improved Performance of Cu(InGa)Se2 Thin-Film Solar Cells Using Evaporated Cd-Free Buffer Layers

Y. Ohtake, T. Okamoto, A Yamada, M. Konagai, K. Saito*Tokyo Inst. of Tech., Japan *Teikyo Univ. of Sci. and Tech., Japan

C-II-7

Fabrication of Graded Band-Gap Cu(InGa)Se2 Thin-Film Mini-Modules with a Zn(O,S,OH)x Buffer Layer

K. Kushiya, I. Sugiyama, M. Tachiyuki, T. Kase, Y. Nagoya, D. Okumura, M. Sato, O. Yamase, H. TakeshitaShowa Shell Sekiyu K.K., Japan

C-II-8 Discussion and Summary

T.WadaMatsushita Electric Ind. Co., Ltd., Japan

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■ Session PL-I Plenary Lecture -I

PL-I-1

Current Status and Perspectives of Amorphous Invited Si Thin Film Solar Cells

M. KonagaiTokyo Inst. of Tech., Japan

PL-I-2

Status and Prospects for CIS-Based Photovoltaics

RR.GaySiemens Solar Ind., USA

PL-I-3

High-Efficiency Si Solar Cell Development at Fraunhofer-ISE and in Germany

W. WettlingFraunhofer-Inst. for Solar Energy Systems, Germany

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■ Session A-IV System Evaluation

A-IV-1

PV System Measurements and Monitoring : The European Experience

G. BlaesserJoint Research Centre, Italy

A-IV-2

Practical Values of Various Parameters for PV System Design

T. Oshiro, H. Nakamura, M Imataki, K. Sakuta*, K. Kurokawa.Japan Quality Assurance Org., Japan *Electrotechnical Lab., Japan..Tokyo Univ. of Agri. and Tech., Japan

A-IV-3

The Value of Pbotovoltaics to Utilities for Mitigation of the Risk of Increased Environmental Regulation

J. OppenheimRenewable Energy Tech. Analysis, USA

A-IV-4

Case Studies of Large-Scale PV Systems Distributed around Desert Area of the World

K. Kurokawa, T. Takashima., T. Hirasawa**, T. Kichimi***, T. Imura****, T. Nishioka+, H. Iitsuka*, N. Tashiro++

Tokyo Univ. of Agri. and Tech., Japan *Electrotechnical Lab., Japan **Kandenko Co., Ltd., Japan ***Kyocera Corp., Japan ****Fuji Electric Co., Ltd., Japan +Tokyu Construction Co. Ltd., Japan ++PVTEC, Japan +++NEDO, Japan

A-IV-5

An Analysis of Time-Dependent Spatial Distribution of Output Power from Very Many PV Power Systems Installed on a Nation-Wide Scale in Japan

A Murata, K. OtaniElectrotechnical Lab., Japan

A-IV-6

Long-Term Scenarios for the Integration of Photovoltaics into the Global Energy System

B. SerensenRoskilde Univ., Denmark

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■ Session A-V Symposium A "Modem Module Technologies and Advanced Concepts"

A-V-1

Photovoltaic Building and Infrastructure Integration - the European Experience of Improvement in Technology and Economics

T.NordmannTNC Consulting AG, Switzerland

A-V-2

Technical Characteristics and Benefits of the Advent of the Headrick Solar-Voltaic Dome Power Station

E.M. Smith, M. ArchSolar Development Cooperative, USA

A-V-3

Exchangeable PV Shingle

T. Y agiura, M. Morizane, K. Murata, K. Uchihashi, S. Tsuda, S. Nakano, T. Ito*, S. Omoto., Y. Yamashita*, H. Yamakawa*, T. Fujiwara*Sanyo Electric Co., Ltd., Japan *Kubota Corp., Japan

A-V-4 Performance of PV Glass Curtain Wall Using Color Solar Cells on Building

T. Nii, S. Ide, K. Tazawa, T. Harada, N. Ishikawa*, M. Kanai*, I. Hide*, T. Ito**, T. Nagai**, T. YoshidaShowa Shell Sekiyu K.K., Japan *Daido Hoxan Inc., Japan **Kajima Corp., Japan

A-V-5

Development of Photovoltaic Module Integrated with Roofing Materials II (Heat Insulated PV Roof Panel Method)

K. Hayashi, T. Hatsukaiwa, T. Yamawaki, K. Nishimura, Y. Matsumura, S. MizukamiKaneka Corp., Japan

A-V-6

A Flexible PV Module for Residential Applications

M. Horiguchi, M. Tanda, S. Kato, Y. Watanuki, T. Yoshida, T. Hama, Y. Ichikawa, R Sakai, N. Sakai*, J. Kurihara, O. Ishikawa*Fuji Electric Corp. R&D, Ltd., Japan *Misawa Homes Co., Ltd., Japan

A-V-7

Development of Photovoltaic Modules Integrated with a Metal Curtain Wall

M. Yoshino, T. Mori, M Mori, M. Takahashi, S. Yoshida, K. Shirasawa*YKK Corp., Japan *Kyocera Corp., Japan

A-V-8

Reliability Testing of AC-Module Inverters

C.W.G. Verhoeve, W.C. SinkeNetherlands Energy Research Foundation, The Netherlands

A-V-9

Conceptual Considerations on PV Systems Composed of AC Modules

K. Kurokawa, K. Kamisako, T. ShimizuTokyo Univ. of Agri. and Tech., Japan

A-V-10

A Development of AC Module System for Flexible and Low Cost PV Installation

K. Takigawa, H. KobayashiCentral Research Inst. of Electric Power Ind., Japan

A-V-11

Low Cost Solar Module Manufacturing

RG. Little, MJ. Nowlan, G. Darkazalli Spire Corp., USA

A-V-12

Preparation and Properties of an Experimental Static Concentrator with a New Three Dimensional Lens for Low-Cost Modules

K. Yoshioka, K. Nakamura, S. Goma, T. SaitohTokyo Univ. of Agri. and Tech., Japan

A-V-13

Recycling of PV Modules

M. PaltersonBP Solar International, U.K.

A-V-14

Module Recycling for Saving Resources and Manufacturing Cost

K. Sakuta, A Murata, K. KatoElectrotechnical Lab., Japan

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■ Session B-III Advanced Cell and Process Technologies for Crystalline-Si Solar Cells

B-III-1

Low Cost Photovoltaic Roof Tile

S.R Wenham, S. Bowden, M. Dickinson, R Largent, N. Shaw, C.B. Honsberg, M.A Green, P.R Smith*Univ. of New South Wales, Australia *Dussek Campbell Pty. Ltd., Australia

B-III-2

Effect of Boron Gettering on Minority-Carrier Quality for FZ and CZ Si Substrates

N. Ohe, K. Tsutsui*, T. Warabisako*, T. SaitohTokyo Univ. of Agri. and Tech., Japan *Hitachi, Ltd., Japan

B-III-3

Control of μe-Si/c-Si Interface Layer Structure for Surface Passivation of Si Solar Cells

S. Muramatsu, T. Uematsu, Y. Nagata*, H. Ohtsuka, T. WarabisakoHitachi, Ltd., Japan *Hitachi Device-Eng. Ltd., Japan

B-III-4

Recent Insight Gained on Electroless Plating of Double Sided Buried Contact Silicon Solar Cells

A.U. Ebong, D.S. Kim, S.H. Lee, E.C. ChoSamsung Advanced Inst. of Tech., Korea

B-III-5 Process Development of Amorphous Silicon/Crystalline Silicon Solar Cells

F. Roca, G. Sinno, G. Di Francia, P. Prosini, G. Fameli, P. Grillo, A. Citarella, F. Pascarella, D. Della SalaENEA -Centro Ricerche Fotovoltaiche, Italy

B-III-6

Self-Aligned Locally-Diffused Emitter (SALDE) Silicon Solar Cell

J. Salami, A. Shibata, D. Meier, E. Kochka, S. Yamanaka, P. Davis, J. Easoz, T. Abe*, K. Kinoshita.Ebara Solar Inc., USA *Ebara Research Co., Japan

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■ Session B-IV Thin-Film Polycrystalline Si Solar Cells - Process Technologies and Devices -

B-IV-1

Characterization of Thin Film Silicon Formed by High-Speed Zone-Melting Recrystallization Process

H. Naomoto, S. Hamamoto, A. Takami, S. Arimoto, T. IshiharaMistsubishi Electric Corp., Japan

B-IV-2

Crystalline Silicon on Glass for Thin Film Solar Cells

J.H. Wemer, P. Lölgen, J. Kühnle, R. Plieninger, M. Wolf, B. Winter, R Brendel, R,B. BergmannMax-Planck-Institut für Festkörperforschung, Germany

B-IV-3

Impurity Doping in Polycrystalline Si Deposited on Foreign Substrates by Plasma Enhanced CVD towards Thin Film Solar Cells

T. Fuyuki, H. Kohara, H. MatsunamiKyoto Univ., Japan

B-IV-4

Hot Wire CVD: A One-Step Process to Obtain Thin Film Polycrystalline Silicon at a Low Temperature on Cheap Substrates

J.K. Rath, M. Galetto, C.H.M. van der Werf K.F. Feenstra, H. Meiling, M.W.M. van Cleef, R.E.I. SchroppUtrecht Univ., The Netherlands

B-IV-5

Study on Cat-CVD Poly-Si Films for Solar Cell Application

R Iiduka, A. Heya, H. MatsumuraJapan Advanced Inst. of Sci. and Tech., Japan

B-IV-6

Properties of Polycrystalline Silicon Thin Films Grown by Two-Step-Growth on Glass

Y. Miyamoto, D. He, A. Miida, I. ShimizuTokyo Inst. of Tech., Japan

B-IV-7

Growth of Poly-Crystalline Si and SiGe Layers on Glassy Substrates from Metallic Solution

M. Konuma*,**, G. Cristiani*, A. Gutjahr*, I. Silier*, F. Banhart**, E. Bauser**Max-Planck-Institut Jür Festkörperforschung, Germany **Max-Planck-Institut für Metallforshung, Germany

B-IV-8

Optical Modeling of Thin Silicon Solar Cells - Implications on the Device Design

B.L. Sopori, J. MadjdpourNational Renewable Energy Lab., USA

B-IV-9

Silicon Thin-Film Solar Cells on Insulating Intermediate Layers

C. Hebling, S.W. Glunz, C. Schetter, J. Knobloch, A. RliuberFraunhofer-Inst. for Solar Energy Systems, Germany

B-IV-10

Quantum Efficiency Analysis of Hydrogenated Thin Film Crystalline Si Solar Cells on Ribbons

K. Said, T. Vermeulen, J. Poortmans, J. NijsIMEC, Belgium

B-IV-11

15.6% Efficient Polycrystalline Silicon Film. Solar Cells

H.E.A. Elgamel, A.M. Barnett*Cairo Univ., Egypt *AstroPower Inc., USA

B-IV-12

Poly Crystalline Silicon Solar Cells Using the Plasma Spray Method

T. Mishima, S. Itoh, G. Matuda, M. Yamamoto, K. Yamamoto, H. Kiyama, T. YokoyamaDaido Hoxan Inc., Japan

B-IV-13 Thickness Dependence on the Performances for Below 10μm Thin Film Poly-Si Solar Cell Fabricated by Low Temperature Process

A. Nakajima, T. Suzuki, M. Yoshimi, K. YamamotoKaneka Corp., Japan

B-IV-14675-cm2 Silicon-FilmTM Solar Cells

D.H. Ford, A.M. Barnett, J.C. Checchi, S.R Collins, RB. Hall, C.L. Kendall, S.M. Lampo, J.A. RandAstroPower, Inc., USA

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■ Session C-III CuInS2 Thin Films and Devices

C-III-1

Growth and Characterization of CuInS2 Films Grown by RF Ion Plating

K. Kondo, S. Nakamura, H. Sano, H. Hirasawa, K. Sato.Stanley Electric Co., Ltd., Japan *Tokyo Univ. of Agri. and Tech., Japan

C-III-2

Epitaxial n-Si/p-CuInS2 Heterojunction Devices

H. Metmer, Th. Hahn, Chr. Schmiga, J.-H. Bremer, D. Borchert*, W.R. Fahmer*, M. SeibtUniv. Göttingen, Germany *Fern Univ. Hagen, Germany

C-III-3

CuInS2 Thin Films Solar Cells Fabricated by Sulfurization of Oxide Precursors

T. Negami, Y. Hashimoto, M. Nishitani, T. WadaMatsushita Electric Ind. Co., Ltd., Japan

C-III-4

Properties of CuInS2 Thin Films Grown by a Two Step Process without H2S

R. Klenk, Ch. Kaufmann, M. Saad, I. Hengel, V. Dieterle, U. Blieske, K. Ellmer, J. Klaer, S. Fiechter, A. Jäger-Waldau, M.Ch. Lux-SteinerHahn-Meitner-Institut Berlin, Germany

C-III-5

CuInS2 Thin Film Solar Cells Fabricated by Controlled Sodium Incorporation

T. Watanabe, H. Nakazawa, M. Matsui, H. Ohbo*, T.Nakada*Asahi Chemical Ind. Co., Ltd., Japan *Aoyama Gakuin Univ., Japan

C-III-6

A Study on Photovoltaic Characteristics of CuInS2/CdS Solar Cell

G.-C. Park, J. Lee, H.-D. Chung, C.-D. Kim, H.-R. Park, W.-J. Jeong*, W.-S. Jung**, K.-S. LeeMokpo National Univ., Korea *Hanlyo Sanup Univ., Korea **Poly Technic Univ., Korea

C-III-7

Over 10% Efficient CuInS2 Solar Cell by Sulfurization

T. Nakabayashi, T. Miyazawa, Y. Hashimoto, K.ItoShinshu Univ., Japan

C-IV-1

A Plasma Physics Approach to Increasing the Growth Rate of High-Quality a-Si for Solar Cell Fabrication

G. Ganguly, A. MatsudaElectrotechnical Lab., Japan

C-IV-2

Potential of VHF-Plasmas for Low-Cost Production of a-Si:H Solar Cells

A. Shah, U. Kroll, H. Keppner, J. Meier, P. Torres, D. FischerUniv. of Neuchatel, Switzerland

C-IV-3

Strategic Study on Fabrication Process of a-Si:H by Chemical Reaction

I. ShimizuTokyo Inst. of Tech., Japan

C-IV-4

Interfaces in a-Si:H Solar Cell Structures

H. WagnerInstitut für Schicht-und Ionentechnik, -Photovoltaik-, Germany

C-IV-5

Commercialization of Amorphous Silicon Based Multijunction Modules : R&D Issues

R.R. Arya, D.E. Carlson, L. Yang, L.F. Chen, F. Willing, K. Rajan, K. Jansen, J. Newton, R.RomeroSolarex Corp., USA

C-IV-6

Advances in Amorphous Silicon Alloy Cell and Module Technology

S. Guha, J. Y ang, A. Banerjee, T. Glatfelter, S. SugiyamaUnited Solar Systems Corp., USA

C-IV-7 Advanced Fabrication Technologies of Integrated-Type Structure for a-Si Solar Cells

S. Kiyama, S. Nakano, Y. Domoto, H. Hirano, H. Tarui, K. Wakisaka, M Tanaka, S. Tsuda, S.NakanoSanyo Electric Co., Ltd., Japan

C-IV-8

Development of Process Technologies for Plastic-Film Substrate Solar Cells

T. Yoshida, S. Fujikake, S. Kato, M. Tanda, K. Tabuchi, A. Takano, Y. Ichikawa, H. SakaiFuji Electric Corp. R&D, Ltd., Japan

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■ Session P-I-D Poster Session -I Fundamentals -I

P-I-D-1

ESTI Scan Facility

R. Bisconti, R.A Kous*, M. Lundqvist, H.A. OssenbrinkEuropean Solar Test Installation, Italy *Enschede Polytechnic, The Netherlands

P-I-D-2

The Fraunhofer ISE PV Charts: Assessment of PV Device Performance

K. Bücher, S. KunzelmannFraunhofer Inst. for Solar Energy Systems, Germany

P-I-D-4

Intercomparison of Irradiance Measurements Based on WRR and ETL Irradiance Scales

R. Shimokawa, I. Saito, Y. Miyake*, H. Ikeda*, F. Nagamine**, S. Igari**Electrotechnical Lab., Japan *EKO Instruments Trading Co., Ltd., Japan **JQA Inst., Japan

P-I-D-5

Capacitance Effects in High Efficiency Cells

G. Friesen*, H.A. OssenbrinkEuropean Solar Test Installation, Italy *Grantholder Univ., Germany

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■ Crystalline Si Solar Cells and Materials -I

P-I-D-6

Optical Modelling of Silicon Cells in Spherical Shape

R. Bisconti, H.A. OssenbrinkEuropean Solar Test Installation, Italy

P-I-D-8

Purification of Metallurgical Grade Silicon by Electron Beam Melting

K. Hanazawa, N. Yuge, Y. Sakaguchi, H. Terashima, F. ArataniKawasaki Steel Corp., Japan

P-I-D-9

The Simulation Analyses of the Thermal Stress in an Electromagnetic Casting System

K. Sasatani, R Kawamura, T. Onizuka, K. KanekoSumitomo SiTiX Corp., Japan

P-I-D-10

Characterization and Crystalline Properties of the Electromagnetic Casting (EMC) Ingots

T. Onizuka, R. Kawamura, K. Sasatani, K. KanekoSumitomo SiTiX Corp., Japan

P-I-D-11

An Increase in the Photovoltage by KCN Treatments for Solar Cells

S. Tachibana*, Y. Nakato*, K. Yoneda**, H. Kobayashi*,+

*Osaka Univ., Japan **Matsushita Electronics Corp., Japan +Research Development Corp., Japan

P-I-D-12

MIS Inversion Layer Solar Cells Made from Off-Grade Silicon

G. Lihui Shanghai Jiao Tong Univ., P.R. China

P-I-D-13

Buried Contact Silicon Solar Cell with Mechanical Grooving

Z. Yuwen, L. Zhongming, M. Chundong, L. Zhiming, Y. Zhongyao, L. Kun, Y. Yuan, C. Zhiyun, H. ShaoqiBeijing Solar Energy Research Inst., P.R. China

P-I-D-14

Advanced Buried Contact Solar Cell Structure

Y.H. Cho, AU. Ebong, D.S. Kim, E.C. Cho, S.H. LeeSamsung Advanced Inst. of Tech., Korea

P-I-D-15 Voc-Limits of High Efficiency mc-Si Solar Cells Investigated by the Mini Solar Cell (MSC) Method

R. Baldner, S.W. Glunz, R. Schindler, W. Warta, W. WettlingFraunhofer Inst. for Solar Energy Systems, Germany

P-I-D-16

Calibration of AMO Reference Solar Cells Using Direct Normal Terrestrial Sunlight

Y. Yiqiang, Z Lingru, M.Z.ChengChina Academy of Space Tech., P.R. China

P-I-D-17

Optimization of Dual n and p Back Side Contact Cost Effective Silicon Solar Cells Using Hspice Circuit Modelling

M.Y. Ghannam, RP. Mertens*, J.F. Nijs*, R. Van Overstraeten*Kuwait Univ., Kuwait *IMEC, Belgium

P-I-D-18

The a-Si:H/Poly-Si Heterojunction Solar Cells

J. Yi, S.-S. KimSung Kyun Kwan Univ., Korea

P-I-D-19

Phosphorus Gettering in DCM Multicrystalline Silicon Wafers

A Fukatsu, T. Saitoh, I. Hide*Tokyo Univ. of Agri. and Tech., Japan *Daido Hoxan Inc., Japan

P-I-D-20

Optimization of Surface Passivation for High Efficiency Silicon Solar Cell

D.S. Kim, AU. Ebong, S.H. Lee, E.C. Cho, Y.H.ChoSamsung Advanced Inst. Of Tech., Korea

P-I-D-21

A Performance Simulation for Simplified Backside-Contact Silicon Solar Cells Using a Novel Two Dimensional Simulator Executed on Personal Computers

K. Matsukuma, T. Miyamoto, H. Yazu, K. MoritaKumamoto Inst. of Tech., Japan

P-I-D-22

Correspondence among PL Measurement, MBIC Measurement and Defect Delineation in Polycrystalline Cast-Si Solar Cells

R. Shimokawa, M. Tajima*, M. Warashina*, Y. Kashiwagi**, H. KawanamiElectrotechnical Lab., Japan *Inst. of Space and Astronautical Sci., Japan **Tonen Corp. R&D Lab., Japan

P-I-D-23

Spectral Characteristics of a-Si:H/c-Si Heterostructures

S. Gall, R. Hirschauer, M. Kolter*, D. BrllunigHahn-Meitner-Institut Berlin, Germany *Forschungszentrum Jülich, Germany

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■ Amorphous Si Solar Cells and Materials -I

P-I-D-25

Optimal Optical Design of Thin Film Solar Cells

F. Zhu*, P. Jennings, J. Cornish, G. Hefter, K. LuczakMurdoch Univ., Australia *Am-Si Pty Ltd., Australia

P-I-D-26

Optical Designs of Single and Tandem Structure Amorphous Silicon Solar Cells

P. Stulik, J. SinghNorthern Territory Univ., Australia

P-I-D-27

Influence of Interfaces on the Stability of a-Si Tandem Solar Cells

X Geng*, Z. Yu*,**, Z. Wang*, Z. Sun*, W. Xu**Nankai Univ., P.R. China **Tianjin Transport Eng. College, P.R. China

P-I-D-28

Amorphous / Microcrystalline Silicon Tandem Solar Cells Prepared by Triode PECVD

L. Xianbo, S. Shuran, Y. Feng, P. Guangqin, M. Zhixun, K. Gaunglin, Z Yuwen*, H. Shaoqi*, L. Zhongming*Chinese Academy of Sci., P.R. China *Beijing Solar Energy Research Inst., P.R. China

P-I-D-29

Light - and Current - Induced Degradation in Amorphous Silicon Solar Cells : A Comparative Study

A. Dasgupta, N. Palit, S. Ray, A.K. BaruaIndian Association for the Cultivation of Sci., India

P-I-D-30

Development of Large Area Amorphous Silicon Solar Cells for Space

G.J. Vendura, Jr., M.A. KruerTWR Space and Tech. Div., USA

P-I-D-31

Effect of Reverse Bias Annealing on Light Induced Defects in a-Si:H p-i-n Solar Cells

V. Dutta, R.V.R MurthyIndian Inst. of Tech., India

P-I-D-32

Charge Carrier Transport in n-i-p and p-i-n a-Si/c-Si Heterojunction Solar Cells

J. Furlan, F. Smote, P. Popovic, M. TopicUniv. of Ljubljana, Slovenia

P-I-D-33

Experimental Model and Long-Term Prediction of Conversion Efficiency a-Si Solar Cells

K. Takahisa, T. Kojima, K. Nakamura, T. Koyanagi, T. Y anagisawaElectrotechnical Lab., Japan

P-I-D-34

Requisites for the Development of Efficient, Highly Stable Amorphous Silicon Solar Cells

C. Beneking, B. Rech, M Kolter, W. Appenzeller, H. WagnerResearch Center Juelich, Germany

P-I-D-35

Nucleation and Growth of Textured Al-Doped ZnO Films for a-Si:H- Solar Cells Analysed by High Resolution SEM

O. Kluth, C. Beneking, B. Rech, W. Appenzeller, H. Wagner, R Waser*, S. HoffinannResearch Center Juelich, Germany *Univ. of Aachen, Germany

P-I-D-37

Sensitivity Study of a-Si:H Solar Cell Model Parameters

J.A. Willemen, M. Zeman, J.W. Metselaar Delft Univ. of Tech., The Netherlands

P-I-D-38

New Concept Cycled Illumination and Temperature Accelerated Degradation Test Method for Thin-Film PV Cells

S. Igari, J. Nose, A. Nakano, K. Takahisa*, A. Matsuda*JQA Inst., Japan *Electrotechnical Lab., Japan

P-I-D-39

Role of Buffer Layer at the p/i Interface on the Stabilized Efficiency of a-Si Solar Cells

B. Samanta, A.K. BaruaIndian Association for the Cultivation of Sci., India

P-I-D-40

Highly Conductive Undoped ZnO Films Prepared by Pyrosol Method from Zinc Acetate and Methanol Solutions

C.H. Lee, K.S. Lim, J. Song*, K.H. Yoon*Korea Advanced Inst. of Sci. and Tech., Korea *Korea Inst. of Energy Research, Korea

P-I-D-41

Alternative Deposition and Hydrogen Treatment of Undoped ZnO Film Using Photo-MOCVD

S.J. Baik, W.Y. Cho, C.H. Lee, K.S. LimKorea Advanced Inst. of Sci. and Tech., Korea

P-I-D-42

Etching and Passivation Effects on a-Si:H Solar Cell Characteristics by Hydrogen Treatment Using Mercury-Sensitized Photo-CVD Method

J.H. Jang*,**, K.S. Lim**Korea Advanced Inst. of Sci. and Tech., Korea **Samsung Electronics Co., Ltd., Korea

P-I-D-43

Novel Approaches to the Cost Reduction of Silicon Thin-Film Solar Cells

B. Crone, A. Payne, S. WagnerPrinceton Univ., USA

P-I-D-44

High Stabilized Efficiency Amorphous Silicon Solar Cells Using Deuterium Dilution Method

K. Dairiki, S. Suzuki, A. Yamada, M Konagai Tokyo Inst. of Tech., Japan

P-I-D-45

Photo Atomic Layer Deposition of Transparent Conductive ZnO Films

K. Saito, Y. Watanabe, K. Takahashi, T. Matsuzawa, B. Sang*, M. Konagai*Teikyo Univ. of Sci. and Tech., Japan *Tokyo Inst. of Tech., Japan

P-I-D-46

Novel Light Trapping Schemes Involving Planar Junctions and Diffuse Rear Reflectors for Thin Film Silicon Based Solar Cells

K. Winz, C.M. Fortmann*, Th. Eickhoff, H. Wagner, H. Fujiwara**, I. Shimizu**Research Center Jillich GmbH, Germany *State Univ. of New York at Stony Brook, USA **Tokyo Inst. of Tech., Japan

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■ CIS Materials and Cells - I

P-I-D-47

Influence of Annealing Temperature on the Properties of Cu(In,Ga)Se2 Thin Films by Thermal Crystallization in Se Vapour

T. Yamaguchi, Y. Yamamoto*, T. Tanaka**, N. Tanahashi**, A. Yoshida**Wakayama College of Tech., Japan *Fukui College of Tech., Japan **Toyohashi Univ. of Tech., Japan

P-I-D-48

Preparation of CuInSe2 Thin Films with Large Grain by Excimer Laser Ablation

A. Yoshida, N. Tanahashi, T. Tanaka, Y. Demizu, Y. Yamamoto., T. Yamaguchi**Toyohashi Univ. of Tech., Japan *Fukui College of Tech., Japan **Wakayama College of Tech., Japan

P-I-D-49

Characterization of Cu(In,Ga)2Se3.5 Thin Films Prepared by RF Sputtering from Cu(In,Ga)Se2 with Na2Se

T. Tanaka, N. Tanahashi, Y. Yamamoto*, T. Yamaguchi**, A. YoshidaToyohashi Univ. of Tech., Japan *Fukui College of Tech., Japan **Wakayama College of Tech., Japan

P-I-D-50

Preparation and Properties of Sprayed CuGa0.5 In0.5Se2 Thin Films

K.T.R Reddy, R.B.V. Chalapathy Sri Venkateswara Univ., India

P-I-D-51

Composition Control of Electrodeposited Cu-In-Se Layers for Thin Film CuInSe2 Preparation

S. Nakamura, S. Sugawara*, A. Hashimoto*, A. Y amamoto.Tsuyama National College of Tech., Japan *Fukui Univ., Japan

P-I-D-52

Study of One Step Electrodeposition Condition for Preparation of CuIn(Se,S)2 Thin Films

S. Kuranouchi, T. NakazawaNagano National College of Tech., Japan

P-I-D-53

Deposition of InSe and Ga2Te3 Binary Compounds Thin Films by Close-Spaced Sublimation (CSS) and Close-Spaced Vapour Transport (CSVT)

A. Mostavan, N.R. Jauhari*, R.Adi**, H. Sudijo*, F. Guastavino+

Inst. Teknologi Bandung, Indonesia *Lembaga Ilmu Pengetahun Indonesia, Indonesia **Univ. Indonesia, Indonesia +Univ. Montpellier II, France

P-I-D-54

Preparation of CuIn(SxSe1-x)2 Thin Films by Sulfurization and Selenization

T. Ohashi, K. Inakoshi, Y. Hashimoto, K. ItoShinshu Univ., Japan

P-I-D-55

Electrical Properties of CuInSe2 Films Prepared by Evaporation of Cu2Se and In2Se3

S.C. Park, S.H. Kwon, J.S. Song*, B.T. AhnKorea Advanced Inst. of Sci. and Tech., Korea *Korea Inst. of Energy Research, Korea

P-I-D-57

Effect of Ionization of Individual Cluster Beam on Film Qualities in ICB Deposition of CuInSe2-Based Multinary Compounds

Y. Yanase, K. Iida, Y. Kikuchi, T. Shimizu, T. Ishibashi, K. SatoTokyo Univ. of Agri. and Tech., Japan

P-I-D-58

Preparation of CuInSe2 Thin Films by Metal Organic Decomposition Method Using Metal Naphthenates

S. Ando, Y. Asahi, S. Okamura*, T. TsukamotoSci. Univ. of Tokyo, Japan *Sci. Univ. of Tokyo in Yamaguchi, Japan

P-I-D-59

Characterizations of Prepared CuInSe2 Thin Films by Pulsed Laser Ablation Method

S. Ando, Y. Saino, S. Endo, T. TsukamotoSci. Univ. of Tokyo, Japan

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■ III-V and Space Cells -I

P-I-D-60

Improvement of GaAs0.7P0.3/Si Tandem Solar Cell

N. Kaneyama, T. Soga, T. Jimbo, M. Umeno Nagoya Inst. of Tech., Japan

P-I-D-61 Characterization and Fabrication of InGaP/Si Two-Terminal Tandem Solar Cells

S. Mori, T. Egawa, J. Dong*, K. Matsumoto*, T. Soga, T. Jimbo, M. UmenoNagoya Inst. of Tech., Japan *Nippon Sanso Corp., Japan

P-I-D-62

High Efficiency Monolithic Three-Terminal GaAs/Si Tandem Solar Cells

T. Shiraishi, T. Soga, T. Egawa, T. Jimbo, M. UmenoNagoya Inst. of Tech., Japan

P-I-D-63

Deep Level Transient Spectroscopy Analysis of Radiation Damage to Silicon Solar Cells

S.J. Taylor, M. Yamaguchi, K. Ando*, T. Yamaguchi*, S. Matsuda**, O. Kawasaki**Toyota Tech. Inst., Japan *Tottori Univ., Japan **NASDA, Japan

P-I-D-64

Large Area, Radiation Resistant, 12.5% BOL, InP/Si Solar Cells

R.J. Waiters., S.R Messenger**, H.L. Cotal*, G.P. Summers*,+, E.A. Burke**, S.J. Wojtczuk*, H.B. Serreze++

*U.S. Naval Research Lab., USA **SFA, Inc., USA +Univ. of Maryland Baltimore Country, USA ++Spire Corp., USA

P-I-D-65

Annealing of Electron-Irradiated Single Junction InGaP/GaAs Solar Cells

C. Vargas-Aburto, R.M. Uribe, D. Brinker*, D.A. Scheiman**, M. Yamaguchi+Kent State Univ., USA, *NASA Lewis Research Center, USA, **NYMA, Inc., USA, +Toyota Tech. Inst., Japan

P-I-D-66

Linear PV Receivers for Space Concentrator Modules

V.M. Andreev, I.V. Kochnev, V. M. Lantratov, V.R Larionov, V.D. Rumyantsev, M.Z. ShvartsRussian Academy of Sci., Russia

P-I-D-67

Dislocation Density and Diffusion Lengths in Heteroepitaxial InP/Si Solar Cells

R.K. Jain, D.J. FloodNASA Lewis Research Center, USA

P-I-D-68

AIGaAs/GaAs LPE Grown Concentrator Solar Cells

V.M. Andreev, V.P. Khvostikov, E. V. Paleeva, M.Z.ShvartsRussian Academy of Sci., Russia

P-I-D-69

Electrical Analysis of Low Energy Argon Ion Bombarded InP

M.M.ANabyTanta Univ., Egypt

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■ CdTe Materials and Processes

P-I-D-70

An In-Situ Method for CdCl2 Treatment on CdTe Thin Films

P.D. Paulson, V. DuttaIndian Inst. of Tech., India

P-I-D-71

Transparent ITO-CdTe Contacts for Thin Film CdS-CdTe Solar Cells

J.H. Chao, A. Turner, J.C. McCiure, G.B. Lush, V.P. SinghThe Univ. of Texas at El Paso, USA

P-I-D-72

Transparent Sputtered Indium Tin Oxide Contacts to Solution Grown Cadmium Sulfide Films

R. Santiesteban, J.C. McClure, V.P. SinghThe Univ. of Texas at El Paso, USA

P-I-D-73

Growth Kinetics and Structural Characterization of Polycrystalline CdTe Films Grown by Hot Wall Vacuum Evaporation

S. Seto, S. Yamada, K. Suzuki*Ishikawa National College of Tech., Japan *Hokkaido Inst. of Tech., Japan

P-I-D-74

Effect of Cu2Te-Au Contact to CdTe Film on Photovoltaic Properties of CdS/CdTe Solar Cell

H. Uda, S. Ikegami, H. SonomuraKinki Univ., Japan

P-I-D-75

Raman and Photoluminescence Characterizations of Znx Cd1-xS Layers Deposited by the Electrochemical Deposition

M. Ichimura, T. Furukawa, K. Shirai, F. GotoNagoya Inst. of Tech., Japan

P-I-D-76 Defect Reduction in Electrochemically Deposited CdS Thin Films by Annealing in O2

F. Goto, K. Shirai, M. IchimuraNagoya Inst. of Tech., Japan

P-I-D-77

Fabrication and Characterization of CdS and ZnS Thin Films Made by Close Spaced Sublimation (CSS) and Close-Spated Vapor Transport (CSVT)

R. Adi, A. Mostavan*, N.R. Jauhari**, F. Guastavino+

Univ. Indonesia, Indonesia *Institut Teknologi Bandung, Indonesia **Lembaga Ilmu Pengetahuan Indonesia, Indonesia +Univ. Montpellier II, France

P-I-D-78

Thin Film CdS/CdTe Solar Cells Prepared by Electrodeposition Using Low Cost Materials

F.J. Alvarez, N. Di Lalla, A. LamagnaNational Atomic Energy Commission, Argentina

P-I-D-79

Influence of Substrate on Performance of n-CdSe0.7Te0.3 Thin Film/Polysulphide Photoelectrochemical Solar Cells

V. Damodara Das, L. DamodareIndian Inst. of Tech., India

P-I-D-80

Enhancement of Grain Sia in CdS Films Prepared by Chemical Bath Deposition and CdCh Treatment

S.C. Park, J.S. Song*, B.T. AhnKorea Advanced Inst. of Sci. and Tech., Korea *Korea Inst. of Energy Research, Korea

P-I-D-81

Photovoltaic Properties of CdTe Solar Cells Fabricated by Close-Spaced Sublimation with Screen-Printed CdTe Sources

G.Y. Chung, B.W. Han, B.T. AhnKorea Advanced Inst. of Sci. and Tech., Korea

P-I-D-82

Thermal Stress Measurements on Heat-Treated CdTe Thin films

D. Kim, B. Qi*, D.L. Williamson*, J.U. Trefny*Korea Univ., Korea *Colorado School of Mines, USA PV Modules and BOS Components

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■ PV Modules and BOS Components

P-I-D-83

The Behavior of Highly Concentrated Polycrystalline Solar Cell in Hot Desert Climate

M.A. Mosalam Shaltout, M.M. SabryNational Research Inst. of Astronomy and Geophysics, Egypt

P-I-D-84

The Experience on Compound Parabolic Concentrator for Photovoltaic

A. Mostavan, R. Muhida,M.F.A Faruqy Inst. of Tech. Bandung, Indonesia

P-I-D-85

Development of New Model of DC Ground Fault Detector for Photovoltaic Systems having Transformerless Power Conditioners

T. Hirasawa, K. Machida*, T. Yamazaki**, K. YamazakiKandenko Co., Ltd., Japan, *Tokyo Electric Power Company, Japan, **Hasegawa Electric Co., Ltd., Japan

P-I-D-86

Thermal Recovery Effect on Light-Induced Degradation of Amorphous Silicon Solar Module under Sunlight

T. Yamawaki, S. Mizukami, A.Yamazaki*, H. Takahashi*Kaneka Corp., Japan *Nara National College of Tech., Japan

P-I-D-87

Prediction of Seasonal and Long Term Photovoltaic Module Performance from Field Test Data

I. Muirhead, B. HawkinsTelstra Research Lab., Australia

P-I-D-88

Development of a-Si Photovoltaic Modules Integrated with Roofing Material

K. Hayashi, M. Korido, H. Nishio, S. Kurata, A. Takenaka, A. Ishikawa, K. Nishimura, H. Y amagishi, S. Mizukami, T. Yamawaki, Y. Matsumura, T. Hatsukaiwa, Y. TawadaKaneka Corp., Japan

P-I-D-89

Annual Exergy Evaluation on Photovoltaic Thermal Hybrid Collector

T. Fujisawa, T. TaniSci. Univ. of Tokyo, Japan

P-I-D-91 A New Design and Properties of a Three Dimensional Lens for Non-Tracking PV Module

K. Nakamura, K. Yoshioka, S. Goma, T. SaitohTokyo Univ. of Agri. and Tech., Japan

P-I-D-92

A Study on. the Control of Grid-Connected Photovoltaic Inverter Using Variable Hysteresis Band Current Controller

Y.-O. Choi, S.-Y. Jeong, G.-B. Cho, H.-L. Baek, S.-K. Kim*, G.-I Yu.., I-S. Song**Chosun Univ., Korea *Kongju National Univ., Korea **Korea Inst. of Energy Research, Korea

P-I-D-93

Multi Solar System

A. ElazariSolar, Israel

P-I-D-94

Solar Multimodule for Electrical and Hot Water Supply for Residentially Building

V. Nikiforov, A.R Elazari*Choromagen, R&D Dept, Israel *Solar, Israel

P-I-D-95

Secular Degradation of Crystalline Photovoltaic Modules

K. Machida, T. Yamazaki, T. Hirasawa.Tokyo Electric Power Co., Japan *Kandenko Co., Ltd., Japan

P-I-D-96

Analysis of MPPI' Characteristics in Photovoltaic Power System

T. Kawamura, K. Harada, Y. Ishihara, T. Todaka, T. Oshiro., H. Nakamura*, M Imataki.Doshisha Univ., Japan *Japan Quality Assurance Org., Japan

P-I-D-97

Digital Firing and Digital Control of a Photovoltaic Inverter

S.H. El-Hefnawi, Y.A.G. Atia, Ml. Kamel*Electronics Research Inst, Egypt *Benha Higher Inst. of Tech., Egypt

P-I-D-98

Output Stability of Various PV Modules by Long Term Exposure Test at JQA

S. Igari, I. Nose, A. Nakano, T. Shigekuni, H. Terashima JQA Inst, Japan

P-I-D-99

Solar Battery Power Take-Off Extremal System

S.M. Karabanov, V.V. Simkin*Gelion Ltd, Russia *Ryazan State Radio Eng. Academy, Russia

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■ National Project

P-I-D-100

Electrification of Nine Villages in India by Solar Photovoltaics -A Case Study

P.C. Sanna, M.K. Chaudhury, D. BaruahAssam Sci. Tech. and Environment Council, India

P-I-D-101

Development of Photovoltaics in Poland

S.M. Pietruszko, G. Wisniewski*Warsaw Univ. of Tech., Poland *Inst. for Building, Mechanization and Electrification of Agri., Poland

P-I-D-102

Management Problems of Rural SPV Applications : West Bengal Experience

D.K. BasuGovt. of West Bengal, India

P-I-D-103

Potential of Solar Home-Lighting System in Rural Western India

JN. Malaviya, S.P. RanabeMitcon Ltd., India

P-I-D-104

UNIDO'S Programme for the Promotion of Solar Energy Technologies

A. BromleyUNIDO, Austria

P-I-D-105

Assessment and Application of Photovoltaic Hybrid Systems in Indonesia

S. Trihadi, Z. UdinUPT LSDE-BPP Teknologi, Indonesia

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■ Session A-VI System Applications

A-VI-1

Experiences in Field Test Program of Japan

K. Konno, Y. FujisawaNEDO, Japan

A-VI-2

Performance Evaluation of EGAT's PV Grid Conected Program

C. JivacateElectricity Generating Authority of Thailand, Thailand

A-VI-3

Evaluation of Electric Motor and Gasoline Engine Hybrid Car Using Solar Cells

K. Sasaki, M. Yokota, H. Nagayoshi, K. KamisakoTokyo Univ. of Agri. and Tech., Japan

A-VI-4

Fundamental Study on Photovoltaic I Fuel Cell Power Hybrid System (Characteristic of System Applied Hydrogen Absorbing Alloys)

N. Sekiguchi, T. TaniSci. Univ. of Tokyo, Japan

A-VI-5

Experimental Study for Solar Hydrogen Production by Photovoltaic Near Cairo, Egypt

M.A. Shaltout, F.F.G. Areed*, A.E. Ghettas, H.K. ElminirNational Research Inst. of Astronomy and Geophysics, Egypt *Mansoura Univ., Egypt

A-VI-6

Research on Engineering Method for Cost Effective PV Installation

K. Takigawa, R Kashima, Y. UchiyamaCentral Research Inst. of Electric Power Ind., Japan

A-VI-7

The Results on High Frequency Electric Noise Radiation (Demonstration Test Results at Rokko Test Center)

A. Kitamura, H. Matsuda, S. Tomita*, K. Takigawa*, H. Kobayashi*The Kansai Electric Powae Co, Inc, Japan *Central Research Inst. of Electric Power Ind, Japan

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■ Session A-VII Fundamentals and New Approach

A-VII-1

Minority Carrier Controlled Photoelectrochemical Solar Cells Having an n-Si Electrode Modified with Ultrafine Platinum Particles

S. Yae, J. Jia*, M. Fujitani, Y. NakatoOsaka Univ., Japan *Inst. of Photographic Chemistry, P.R. China

A-VII-2

Photovoltaic Solar Cell from Camphoric Carbon -A Natural Source

K. Murali Krishna, T. Soga, K. Mukhopadhyay*, M. Sharon*, M UmenoNagoya Inst. of Tech., Japan "'Indian Inst. of Tech., India

A-VII-3

Application of Rare Earth Complexes for Photovoltaic Precursors

K. Kawano, K. Arai, H. Yamada, N. Hashimoto, R. NakataThe Univ. of Electro-Communications, Japan

A-VII-4

Voltage and Current Loss in Semiconductor Solar Cells from MCV and Simultaneous IV Measurements

N.D. Sinh, F. SpieB, K. Kliefoth, W. FUsselHahn-Meitner-Inst. Berlin, Germany

A-VII-5

Quantum Efficiency of Silicon Solar Cells at Low Temperatures

M. Wolf R. Brendel, J.H. WemerMax-Planck-Institut ftir Festkörperforschung, Germany

A-VII-6

IQE1D-A Computer Program for Routine Quantum Efficiency Analysis

R Brendel, R PlieningerMax-Planck-Institut ftir Festkörperforschung, Germany

A-VII-7

Local Current -Voltage Curves Measured Thermally (LIVT): A New Technique of Characterizing PV Cells

I.E. Konovalov, O. Breitenstein*, K. Iwig*'Shevchenko Univ. in Kiev, Ukraine *Max Planck Inst. of Microstructure Physics, Germany

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■ Session B-V Super High-Efficiency III-V Cells

B-V-1

High Efficiency InGaP/GaAs Tandem Solar Invited Cells

M. Ohmori, T. Takamoto, E. Ikeda, H. KuritaJapan Energy Corp., Japan

B-V-2

Process Damage Free Thin-Film GaAs Solar Cells by Epitaxial Liftoff with GaInP Window Layer

Y. Yazawa, J. Minemura, K. Tamura, S. Watahiki, T. Kitatani, T. WarabisakoHitachi, Ltd., Japan

B-V-3

Characteristics of GaAs Solar Cells on Ge Substrate with a Preliminary Grown Thin Layer of AIGaAs

K. Takahashi, S. Yamada, T. Unno, S. KumaHitachi Cable, Ltd., Japan

B-V-4

Over 27% Efficiency GaAs/InGaAs Mechanically Stacked Solar Cell

H. Matsubara, T. Tanabe, A. Moto, Y. Mine, S. TakagishiSumitomo Electric Ind., Ltd., Japan

B-V-5

GaInP/GaAs Multijunction Solar Cells for Invited Terrestrial and Space Applications

J.M. Olson, DJ. Friedman, S.R Kurtz, K.A. BertnessNational Renewable Energy Lab., USA

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■ Session B-VI III-V Cells

B-VI-1

Numerical Modeling of III-V Photovoltaic Invited Deveices

J.L. Gray, R.J. SchwartzPurdue Univ., USA

B-VI-2

Performance and Parameter Analysis of Tandem Solar Cells Using Measurements at Multiple Spectral Conditions

R. Adelhelm, K. BücherFraunhofer-Inst. for Solar Energy Systems, Germany

B-VI-3

Improvement of Conversion Efficiency by InAIAs Window Layers for p+n InP Solar Cells

T. Ueda, M. Mohri, S. Gotoh, H. Kakinuma, M. AkiyamaOki Electric Ind. Co., Ltd., Japan

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■ Session B-VII III-V Materials

B-VII-1

Heteroepitaxial Technologies on Si for High Efficiency Solar Cells

M. UmenoNagoya Inst. of Tech., Japan

B-VII-2

The Application of Quantum Well Solar Cells to Thermophotovoltaics

P. Griffin, I. Ballard, K. Barnham, J. Nelson, A. ZachariouImperial Collage, U.K.

B-VII-3

Characterization of GaAs Tunnel Junction with a Heavily Carbon-Doped p+-Layer Fabricated by Metalorganic Molecular Beam Epitaxy

J.-H. Oh, M. KonagaiTokyo Inst. of Tech., Japan

B-VII-4

Optimal Growth Procedure of GaInP/GaAs Heterostructure for High-Efficiency Solar Cells

T. Kitatani, Y. Yazawa, S. Watahiki, K. Tamura, J. Minemura, T. WarabisakoHitachi, Ltd., Japan

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■ Session C-V Amorphous Si Solar Cells and Materials (Materials and S-W Effect)

C-V-1

Effective Conversion Efficiency Enhancement of Amorphous Silicon Modules by Operation Temperature Elevation

M. Kondo, H. Nishio, S. Kurata, K. Hayashi, A Takenaka, A. Ishikawa, K. Nishimura, H. Yamagishi, Y. TawadaKaneka Corp., Japan

C-V-2 More Insights from CPM and PDS: Charged and Neutral Defects in a-Si:H

F. Siebke*,**, H. Stiebig*, R. Carius.*Forschungszentrum Jülich, Germany **Sanyo Electric Co. Ltd., Japan

C-V-3

Laser Desorption Time of Flight Mass Spectrometry as a Novel Characterization Method of Amorphous Silicon for Solar Cell

T. Kato, N. Hara*, A. Suzuki*, M. Sumiya, M. Kawasaki, A Matsuda*, H. KoinumaTokyo Inst. of Tech., Japan *Electrotechnical Lab., Japan A Study on Reversible Photo-Induced Structural Change in a-Si:H by Polarized Electroabsorption

C-V-4

A Study on Reversible Photo-Induced Structural Change in a-Si:H by Polarized Electroabsorption

K. Shimizu,T. Shiba, T. Tabuchi, H. OkamotoOsaka Univ., Japan

C-V-5

Changes of Infrared Absorption of Si-R by Light Irradiation and Thermal Quenching in a-Si:H

T. Goto, S. Nonomura, S. Hirata, S. NittaGifu Univ., Japan

C-V-6

Improvement in Photoconductivity of a-Si:C:H Films by a Combination of Heated Filament and RF Plasma Deposition Technique

D. Das, S. Chattopadhyay, AK. BaruaIndian Association for the Cultivation of Sci., India

C-V-7

Scanning Probe Microscopy and Quantum Chemical Studies on the Initial Growth Process of a-Si:H Plasma CVD on Graphite

K. Nakajima, K. Miyazaki, A Ohtomo, K. Sato., H. KoinumaTokyo Inst. of Tech., Japan *Yokohama National Univ., Japan

C-V-8

Growth of Boron-doped ZnO Thin Films by Atomic Layer Deposition

B. Sang, A. Yamada, M. KonagaiTokyo Inst. of Tech., Japan

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■ Session C-VI Amorphous Si Solar Cells and Materials(Advanced Process)

C-VI-1

Amorphous Silicon Solar Cell on Textured Tempered Glass Substrate Prepared by Sandblast Process

H. Taniguchi, H. Sannomiya, K. Kajiwara, K. Nomoto, Y. Yamamoto, K. Hiyoshi, H. Kumada, M. Murakami, T. TomitaSharp Corp., Japan

C-VI-2

Development of Tempered Glass Substrates with TCO Films for a-Si Solar Cells

M Fukawa, K. Sato, T. Tsukamoto, K. Adachi, H. NishimuraAsahi Glass Co., Ltd., Japan

C-VI-3

Fabrication of Amorphous Silicon p-i-n Solar Cells Using Ion Shower Doping Technique

B.Y. Moon, J.H. Choi, J.G. Kim, J. Jang, D.W. Kim*, S.S. Bae*, K.S. YoonKyung Hee Univ., Korea *Yukong Ltd., Korea

C-VI-4

The Light Induced Degradation of the a-Si:H Alloy Cell Deposited by the Low Pressure Microwave PCVD at High Deposition Rate

K. Saito, M. Sano, J. Matsuyama, M Higasikawa, K. Ogawa, I. KajitaCanon Corp., Japan

C-VI-5

High Efficiency a-Si:H Solar Cells from a Single Chamber, Large-Area, Non-UHV, Not Load Locked, Industrial Batch-Type PECVD Reactor

R.E.I. Schropp, J.K Rath, M.B. von der Linden, M. Zeman*, W. Loyer**, J. Hyvllrinen+

Utrecht Univ., The Netherlands *Delft Univ. of Tech., The Netherlands **NAPS France, France +Microchemistry Ltd., Finland

C-VI-6

Development of High Efficiency a-Si Solar Cell Submodule with a Size of 30cm X 40cm

K. Wakisaka, M. Tanaka, M. Isomurta, H. Haku, S. Kiyama, S. TsudaSanyo Electric Co., Ltd., Japan

C-VI-7

Low Cost Amorphous Silicon Solar Module Encapsulated with Liquid Resin

M. Kondo, A. Takenaka, A Ishikawa, S. Kurata, K Hayashi, H. Nishio, K Nishimura, H. Yamagishi, Y. TawadaKaneka Corp., Japan

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■ Session A-VIII CIS Cells and Related Materials

A-VIII-1

Low Temperature Deposition of CuInSe2 and CuGaSe2 Thin Films by Ioniad Cluster Beam Technique

K Sato, Y. Yanase, T. Shimizu, T. Ishibashi, K Kondo*Tokyo Univ. of Agri. and Tech., Japan *Stanley Electric Co. Ltd., Japan

A-VIII-2

Development of CuInSe2 Thin Film Solar Cells by Encapsulated Selenization

K Sato, T. Kamiya, S. Nakagawa, T. Ikeya, M IshidaYazaki Corp., Japan

A-VIII-3

A Simple Way to Form CuIn(S,Se)2 Alloys from CuInSe2 Thin Film for High Voc

Y.H. Cheng, B.H. Tseng, J.J. Loferski, H.L. HwangNational Tsing Hua Univ., Taiwan

A-VIII-4

Improved Cu(In,Ga)(S,Se)2 Thin Film Solar Cells by Surface Sulfurization

T. Nakada, H. Ohbo, T. Watanabe*, H. Nakazawa*, M. Matsui*, A KuniokaAoyama Gakuuin Univ., Japan *Asahi Chemical Ind. Co., Ltd., Japan

A-VIII-5

A Novel Structure Model for CuImSe5

T. Hanada, A Yamana, Y. Nakamura, O. Nittono, T. Wada*Tokyo Inst. Of Tech., Japan Matsushita Electric Ind. Co., Ltd., Japan

A-VIII-6

Large Area ZnO Films Optimized for Graded Band-Gap Cu(InGa)Se2-Based Thin-Film Mini Modules

N.F. Cooray*, K. Kushiya, A Fujimaki, I. Sugiyama, T. Miura, D. Okumura, M. Sato, M. Ooshita, O. YamaseShowa Shell Sekiyu K.K, Japan *NEDO, Japan

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■ Session A-IX Characterization of CIS Thin Films and Devices

A-IX-1

Heteroepitaxy of Chemical Bath Deposited CdS on Single Crystal CuinSe2/Si Substrates

D. Lincot, M. Furlong, M Froment*, M.C. Bernard*, R. Cortes*, AN. Tiwari**,M. Krejci**, H. Zogg**ENSCP, France *Univ. Pierre et Marie Curie, France **AFIF at Swiss Federal Inst. of Tech., Switzerland

A-IX-2

Electrochemical Profiling of Carrier Concentration in Cu(InGa)Se2 Thin Film Solar Cells

A. Shimizu, A. Yamada, M. KonagaiTokyo Inst. of Tech., Japan

A-IX-3

Determination of Charge Carrier Collecting Regions in Chalcopyrite Heterojunction Solar Cells by Electron Beam Induced Current Measurements

R. Scheer, M. Wilhelm, H.J. LewerenzHahn Meitner Inst., Germany

A-IX-4

Examination of Blocking Current-Voltage Behaviour Through Defect Calcopyrite Layer in ZnO/CdS/CIGS/Mo Solar Cell

M Topic, F. Smote, J. FurlanUniv. of Ljubljana, Slovenia

A-IX-5

Effects of Annealing on CuInSe2 Films Grown by Molecular Beam Epitaxy

S. Niki, I. Kim, P.J. Fons, H. Shibata, A Yamada, H. Oyanagi, T. Kurafuji*, S. Chichibu*, H. Nakanishi*Electrotechnical Lab., Japan *Sci. Univ. of Tokyo, Japan

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■ Session B-VIII Symposium D "Space Solar Cells and Systems"

B-VIII-1

GaAs and Tandem Space Solar Cells on Ge

P.A Iies, Y.C.M. Yeh, C.L. Chu, F.F. Ho Tecstar,Applied Solar Div.,USA

B-VIII-2

High Efficiency Silicon Space Solar Cell

A. SuzukiSharp Corp., Japan

B-VIII-3 An Attempt for Radiation Damage Prediction of Space Solar Cells

M. Yamaguchi, R.J. Waiters*, G.P. Summers*, D.J. Flood**, S.J. Taylor, T. Takamoto+, M. Ohmori+, O. Kawasaki++, S. Matsuda++-Toyota Tech. Inst., Japan *U.S. Naval Research Lab., USA**NASA Lewis Research Center, USA +Japan Energy Cent Res. Ctr, Japan *NASDA, Japan

B-VIII-4

Radiation Response of InGaP/GaAs Single and Dual-Junction Solar Cells

R.J. Waiters*, S.R Messenger**, H.L. Cotal*, G.P. Summers*,***, P.R Sharps+, ML. Timmons+, P. Iies++, Y.C.M Yeh++

*U.S. Naval Research Lab., USA **SFA, Inc., USA ***Univ. of Maryland Baltimore Country, USA +Research Triangle Inst., USA ++Tecstar, Applied Solar Div., USA

B-VIII-5

High Efficiency AIGaAs/Si Tandem Solar Cells under Improved Growth Conditions

K. Baskar, T. Soga, T. Jimbo, M. UmenoNagoya Inst. of Tech., Japan

B-VIII-6

III-V and Thin-Film Photovoltaic Technologies for Space Applications

C. HardinghamEEV Ltd., U.K.

B-VIII-7

Accurate On-Orbit Solar Cell Performance Using the Environmental Work Bench and Radiation Damage Models

S. Bailey, R Chock, H. CurtisNASA Lewis Research Center, USA

B-VIII-8

Fight Data of Solar Cell Monitor on Engineering Test Satellite-VI and Ground Test Data

O. Kawasaki, T. Hisamatsu, S. MatsudaNASDA, Japan

B-VIII-9

Radiation Degradation of Large Fluence Irradiated Space Silicon Solar Cells

T. Hisamatsu, O. Kawasaki, S. Matsuda, T. Nakao*, Y. Wakow*NASDA, Japan *Advanced Eng. Services Corp., Japan

B-VIII-10

Mechanism for the Anomalous Degradation of Si Solar Cells Induced by High Energy Proton Irradiation

M. Imaizumi, M. Yamaguchi, S.J. Taylor, S. Matsuda*, O. Kawasaki*, T. Hisamatsu*Toyota Tech. Inst., Japan *NASDA, Japan

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■ Session C-VII Amorphous Si Solar Cells and Materials (Device physics)

C-VII-1

Application of Real Time Spectroscopic Ellipsometry for Characteriling the Structure and Optical Properties of Component Layers of Amorphous Semiconductor Solar Cells

J. Koh, H. Fujiwara, C.R. Wronski, R.W. CollinsThe Pennsylvania State Univ., USA

C-VII-2

Optical Confinement in High-Efficiency a-Si Solar Cells with Textured Surfaces

Y. Hishikawa, E. Maruyama, S. Yata, M. Tanaka, S. Kiyama, S. TsudaSanyo Electric Co., Ltd., Japan

C-VII-3

The Effects of Charged Defects on Light-Induced Changes in a-Si:H Materials and Solar Cell Structures

L. Jiao, H. Liu, S. Semoushikina, Y. Lee, C.R WronskiThe Pennsylvania State Univ., USA

C-VII-4

Light Induced Changes in Hydrogen Diluted a-Si:H Materials and Solar Cells: A New Perspective on Self-Consistent Analysis

Y. Lee, L. Jiao, H. Liu, Z. Lu, R.W. Collins, C.R WronskiThe Pennsylvania State Univ., USA

C-VII-5

Deposition of (a-Si:H/a-Ge:H)n Multi-Layer Films for Tandem Type Solar Cells

M Sadamoto, H. Tanaka, N. Ishiguro, N. Yanagawa, S. FukudaMitui Toatsu Chemicals, Inc., Japan

C-VII-6

Current Matching in a-Si:H Alloy Tandem Cells on Textured Substrates

M. Zeman, V.I. Kuznetsov, L.L.A Vosteen, J.A Willemen, J.W. Metselaar, R.E.I. Schropp.Delft Univ. of Tech. DIMES, The Netherlands *Utrecht Univ., The Netherlands

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■ Session C-VIII Amorphous Si Solar Cells and Materials (with Crystalline or Micro-Crystalline)

C-VIII-1 The Role of Atomic Hydrogen on the Surface Reaction during the Deposition of Amorphous Silicon

A. Yarnada, T. Oshirna, M. KonagaiTokyo Inst. of Tech., Japan

C-VIII-2

Controlled Nucleation of Thin Microcrystalline Layers for the Recombination Junction in a-Si Stacked Cells

N. Pellaton Vaucher, B. Rech*, D. Fischer, S. Dubail, M Goetz, H. Keppner, C. Beneking*, O. Hadjadj**, V. Shklover+,A. ShahUniv. of Neuchatel, Switzerland *Research Centre Jülich, Germany **Ecole Polytechnique, France +ETH Zentrum, Switzerland

C-VIII-3

High Efficiency Thin-Film Silicon Solar Cells by the "Micromorph" Concept

J. Meier, P. Torres, R Platz, S. Du bail, U. Kroll, J.A. Anna Selvan, N. Pellaton Vaucher, Ch. Hof, D. Fischer, H. Keppner, A. Shah, K. D. Ufert*Univ. of Neuchatel, Switzerland *Siemens Solar, Germany

C-VIII-4

Atomic Scale Characterization of a-Si:H/a-SiC:H Interface Structures

Y. Yoshida, Y. Miyoshi, S. Miyazaki, M. HiroseHiroshima Univ., Japan

C-VIII-5

Preparation of (n) a-Si:H/(p) c-Si Heterojunction Solar Cells

D. Borchert, G. Grabosch, W.R FahrnerUniv. of Hagen, Germany

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■ Session P-II-D Poster Session -II Fundamentals -II

P-II-D-1

Structural Dependence on the Photoconduction and Photovoltaic Behavior of Merocyanine Dyes-II

H.O. Yadav, T. S. Varadarajan, M. Mohanty*, B.N. Pattanaik*, L.N. Patnaik*Univ. Inst. of Chemical Tech., India *Ravenshaw College, India

P-II-D-2

Study for Improvement of Solar Cell Efficiency by Impurity Photovoltaic Effect

H. Kasai, H. MatsumuraJapan Advanced Inst. of Sci. and Tech., Japan

P-II-D-3

Optoelectrical Properties of Semiconducting Camphoric Carbon

K.M. Krishna, T. Soga, K. Mukhopadhyay*, M. Sharon*, M. UmenoNagoya Inst. of Tech., Japan *Indian Inst. of Tech., India

P-II-D-4

Photovoltaic Effect of 5, 10-Dihydrophenaline Derivatives/Poly (3-Methylthiophene) Organic Two-Layer Diodes

K. Uehara, K. Matsumoto, A. SugimotoOsaka Prefecture Univ., Japan

P-II-D-5

Application of Azo Compounds to Solar Battery Materials

K. Higashino, E. Ishiguro*, T. Nakaya**Aichi College of Tech., Japan *Univ. of the Ryukyus, Japan **Osaka City Univ., Japan

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■ Crystalline Si Solar Cells and Materials - II

P-II-D-6

Determination of Carrier Diffusion Length in Solar Quality Silicon

A. Patrin Tech. Univ. of Koszalin, Poland

P-II-D-8

Ray-Tracing of Arbitrary Surface Textures for Light-Trapping in Thin Silicon Solar Cells

D. Thorp, S.R WenharnUniv. of New South Wales, Australia

P-II-D-9

Polycrystalline Silicon Deposited by LPCVD : A Study of the Optical and Electrical Properties

Y. Laghla, E. ScheidLab. d'Analyse et d'Architecture des Systems, France

P-II-D-10

Optical Properties of Alumina Ceramics as a Substrate of Thin Film Solar Cells

M. Tazawa, K. Yoshimura, K. Igarashi, S. TanemuraNational Ind. Research Inst. of Nagoya, Japan

P-II-D-11 Polycrystalline Silicon Thin Films Prepared by Rapid Thermal CVD

Z. Yuwen, L. Zhongming, H. Saoqi, L. Xianbo*, S. Shuran*, D. Lisheng*Beijing Solar Energy Research Inst., P.R. China *Chinese Academy of Sci., P.R. China

P-II-D-12Improving the Quality of Polycrystalline Silicon FilmTM Material by High Temperature Annealing

H.E.A. Elgarnel, MG. Mauk*, A.M. Barnett*Cairo Univ., Egypt *AstroPower Inc., USA

P-II-D-13

Electrical Characterization of VEST Thin Silicon Solar Cells

R Plieninger, H. Morikawa*, S. Arimoto*, P. Lölgen, M. Wolf, R. Brendel, T. Ishihara*, K. Narnba*, J.H. Werner Max-Planck-Institut für Festkörperforschung, Germany *Mitsubishi Electric Corp., Japan

P-II-D-14

Recrystallization of Polycrystalline Silicon Films on Ceramics by Electron Beam

T. Takahashi, R Shimokawa, Y. Matsumoto*, K. Ishii, T. SekigawaElectrotechnical Lab., Japan *Centro de Investigacion de Estudios Avanzados Del. I.P.N., Mexico

P-II-D-15

Characterization of Spray-on Titanium Dioxide (TiO2) Film for Solar Cell Processing

A.U. Ebong, S.H. Lee, C.B. Honsberg*, S.R Wenham*Samsung Advanced Inst. of Tech., Korea *Univ. of New South Wales, Australia

P-II-D-16

Surface Passivation at a SiO2/n+-Layer Interface

H. Takato, T. SekigawaElectrotechnical Lab, Japan

P-II-D-17

Collection Efficiency in Thin Film Multicrystalline Silicon Cells

A.-A.S. Al-Omar, M.Y. GhannamKuwait Univ., Kuwait

P-II-D-18

Electrical Neutralization of B Atoms in Epitaxial Si Films Grown at Very Low Temperature

K.Abe, A. Yamada, M. KonagaiTokyo Inst. of Tech., Japan

P-II-D-19

Crystallization of Amorphous Silicon by Rapid Thermal Annealing with the Utilization of Aluminum

W. Ma, T. Hirade, N. Toyozawa, H. Okamoto, Y. Hamakawa*Osaka Univ., Japan *Ritsumeikan Univ.,Japan

P-II-D-20

Effect of Hydrogen Radical Annealing for SiNx:H/SiO2 Double-Layer Passivation

H. Nagayoshi, M. Ikeda, K. Okushima, T. Saitoh, K. KamisakoTokyo Univ. of Agri. and Tech., Japan

P-II-D-21

Analysis of the Effect of Hydrogen-Radical Annealing for SiO2 Passivation

M. Ikeda, H. Nagayoshi, Y. Onozawa, T. Saitoh, K. KamisakoTokyo Univ. of Agri. and Tech., Japan

P-II-D-22

PECVD Grown Silicon Nitride and Screen Printed Titanium Oxide as Antireflection Coating on Silicon Solar Cells

R. Kishore, S.N. Singh, B.K. DasNational Physical Lab., India

P-II-D-23

Low Surface Recombination of Minority Carriers at μc-Si/c-Si Interfaces by Hydrogen Modification

S. Otsuka, S. Muramatsu*, T. Warabisako*, T. SaitohTokyo Univ. of Agri. and Tech., Japan *Hitachi, Ltd., Japan

P-II-D-24

Characterization of Minority Carrier Recombination at SiO2/Si Interface Oxidized at Low Temperature

Y. Okamoto, K. Tsutsui*, T. Warabisako*, T. SaitohTokyo Univ. of Agri. and Tech., Japan *Hitachi, Ltd., Japan

P-II-D-26

Improvement of SiO2/Si Interface Properties by Annealing in Wet Atmosphere

T. Sasaki, M Satoh, A. Tajima, T. Mohri, T. Sameshima, T. SaitohTokyo Univ. of Agri. and Tech., Japan

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■ Amorphous Si Solar Cells and Materials -II

P-II-D-27

Role of Plasma Deposition Temperature and Post-Deposition Annealing in Fabrication of High Quality a-SiGe:H Alloys

V.I. Kuznetsov, M. Zeman, L.L.A. Vosteen, B.S. Girwar, J.W. MetselaarDelft Univ. of Tech., The Netherlands

P-II-D-28

Stability of Hydrogenated Amorphous Silicon Films Deposited at High Rate

K. Lin, X Lin, H. Wang, Y. Yu, W. Shi, MQ. LiuShantou Univ., P.R. China

P-II-D-29

Electrical Properties of Cl Incorporated Hydrogenated Amorphous Silicon

K.H. Lee, S.K. Kim, K.S. Lee, J.H. Choi, C.S. Kim, S.M. Pietruszko*, M. Kostana, J. JangKyung Hee Univ., Korea *Warsaw Univ. of Tech., Poland

P-II-D-30

Low Temperature Growth of Microcrystalline Silicon by Using SiF4/H2 Plasma

J.I. Ryu, H.C. Kim, B.Y. Ryu, J. JangKyung Hee Univ., Korea

P-II-D-31

Thermal Equilibration and Pbotocreation of Neutral Dangling Bonds in a-Si:H Caused by Floating Bonds

T. Shimizu, M Kumeda, T. NishinoKanazawa Univ., Japan

P-II-D-32

Comparative Study of Defect States in Light-Soaked and High-Temperature-Annealed a-Si:H

M. Kumeda, M Takeda, R Dumy, T. ShimizuKanazawa Univ., Japan

P-II-D-33

A Study of the Effects of Annealing and Out Gassing of Hydrogenated Amorphous Silicon Using Infrared Spectroscopy

P.J. Jennings, J.C.L. Cornish, B.W. Clare, G.T. Hefter, DJ. SantjojoMurdoch Univ., Australia

P-II-D-34

Deposition of Microcrystalline Silicon by Electron Beam Excited Plasma

T. Sasaki, M. Ryoji*, Y. Ichikawa, M. Tohkai*Fuji Electric Corp. R&D., Ltd., Japan *Kawasaki Heavy Ind., Ltd., Japan

P-II-D-35

Application of Current DLTS Technique for Study of Light Degradation in a-Si:H Solar Cells

V. Dutta*, A.R. Rubino, E. TerziniENEA-Centre for PV Research, Itary *Indian Inst. of Tech., India

P-II-D-36

Preparation of p-Microcrystalline Si Films with Low H2 Dilution Ratio from Photo-CVD Method and Their Application to a-Si Solar Cells

C.H. Lee, W.Y. Cho, J.H. Jang, K.S. Lim Korea Advanced Inst. of Sci. and Tech., Korea

P-II-D-37

Numerical Analysis of the Secondary Photo current Transient Response in Amorphous Silicon

P. Popovic, E. Bassanese, F. Smole, J. Furlan, S. Grebner*, R. Schwarz*Univ. of Ljubljana, Slovenia *Tech. Univ. of Munich, Germany

P-II-D-38

Analysis of Degraded a-Si:H p-i-n Solar Cells The Role of Defect State Capture Cross-Sections

F. Smole, M. Topic, A. Groznic, P. Popovic, J. FurlanUniv. of Ljubljana, Slovenia

P-II-D-39

Characterization of High-Quality a-SiC:H Films Prepared by Hydrogen-Radical CVD Method

N. Andoh, H. Nagayoshi, T. Kanbashi, K. KamisakoTokyo Univ. of Agri. and Tech., Japan

P-II-D-40

Preparation of Very Stable and Low Hydrogen Content Amorphous Silicon Films by Hydrogen Radical CVD Method

T. Tsuyuki, H. Nagayoshi, M Kimura, L.-F. Lo, K. KamisakoTokyo Univ. of Agri. and Tech., Japan

P-II-D-41 Opto-Eiectrical Properties of a-Si:H Fabricated from SiCbH2 by ECR Hydrogen Plasma

Y. Yamamoto, M. Hagino, I. ShimizuTokyo Inst. of Tech., Japan

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■ CIS Materials and Cells -II

P-II-D-42

Control of Valence States by a Codoping Method in CuInS2

T. Yamamoto*,**, H. Katayama-Yoshida**Osaka Univ., Japan **Asahi Chemical Ind. Co., Ltd., Japan

P-II-D-43

Characterization of Ga-Se and In-Se Based Semiconductors as Cd Free Buffer Layer in Cu(InGa)Se2 Thin Film Solar Cells

T. Okamoto, A. Yamada, M KonagaiTokyo Inst. of Tech., Japan

P-II-D-44

THM Growth and Characterization of Cu GaxIn1-XSe2 Solid Solutions

H. Miyake, T. Haginoya, K. SugiyamaMie Univ., Japan

P-II-D-45

Characterization of CuInS2 Thin Films Prepared by Sputtering from Binary Compounds

Y. Yamamoto, T. Yamaguchi*, T. Tanaka**,N. Tanahashi**, A. Yoshida**Fukui College of Tech, Japan *Wakayama College of Tech., Japan **Toyohashi Univ. of Tech., Japan

P-II-D-46

Preparation and Evaluation of Cu2ZnSnS4 Thin Films by Sulfurization of E-B Evaporated Precursors

H. Katagiri, N. Sasaguchi, S. Hando, S. Hoshino, J. Ohashi, T. YokotaNagaoka National College of Tech., Japan

P-II-D-47

Surface Photovoltage Measurement in Polycrystalline Semiconductor : Application to CdTe and CuInSe2 Based Devices

A.K. Pal, A.B. Maity, J. Dutta, D. Bhattacharyya, S. ChaudhuriIndian Association for the Cultivation of Sci., India

P-II-D-48

Non-Destructive Optical Technique for the Estimation of Stress in Polycrystalline Films Deposited on Absorbing Substrates

S. Chaudhuri, A.B. Maity, D. Bhattacharyya, A.K. PalIndian Association for the Cultivation of Sci., India

P-II-D-49

Deep Level Transient Spectroscopy on ZnO/CdS/CuGaxIn2 Se1Junctions

W.W. Lam, L.S. Yip, J.E. Greenspan, I. ShihMcGill Univ., Canada

P-II-D-50

Preparation of CuInS2 Films with Sufficient Sulfur Content and Excellent Morphology by One Step Electrodeposition

S. Nakamura, A. Yamamoto*Tsuyama National College of Tech., Japan *Fukui Univ., Japan

P-II-D-51

Analysis of Temperature and Illumination Dependencies of CIS Cell Performance

M. Nishitani, N. Kohara, T. Negami, T. Wada, S. Igari*, R Shimokawa**Matsushita Electric Ind. Co., Ltd., Japan *Japan Quality Assurance Org., Japan **Electrotechnical Lab., Japan

P-II-D-52

Chemical Bath Deposition of CdS Buffer Layer for CIGS Solar Cells

Y. Hashimoto, N. Kohara, T. Negami, N. Nishitani, T. WadaMatsushita Electric Ind. Co., Ltd., Japan

P-II-D-53

Cadmium Diffusion in CuInSe2 Thin Films

K.V. Reddy, A.P. KumarIndian Inst. of Tech., India

P-II-D-54

Quantum Efficiency and Admittance Spectroscopy on Cu(In,Ga)Se2 Solar Cells

J. Parisi, U. Rau, M Schmitt, D. HilburgerUniv. of Bayreuth, Germany

P-II-D-55 Microstructural Characterization of Heteroepitaxial CuInSe2 and CuIn3Se2 Layers

M. Krejci, A.N. Tiwari, H. ZoggAFIF, Switzerland

P-II-D-56

Stability of Cu(In,Ga)Se2 Solar Cells and Evaluation by C-V Characteristics

T. Kojima, T. Koyanagi, K. Nakamura, T. Yanagisawa, K. Takahisa, M. Nishitani., T. Wada*Electrotechnical Lab., Japan *Matsushita Electric Ind. Co., Ltd., Japan

P-II-D-57

CuInS2-Solar Cells with Absorber Sequentially Sputtered and Reacted in Sulphur Vapour

J. Bruns, J. Klaer, K. TOpper, A. Chew-Walter, R. Henninger, R. Scheer, M. Weber, D. BrllunigHahn-Meitner-Institut, Germany

P-II-D-58

Electrical Properties of Coevaporated CuInS2 Thin Films

R. Scheer, M. Alt, HJ. LewerenzHahn-Meitner-Institut, Germany

P-II-D-59

Superstrate-Type CuInSe2 -Based Thin Film Solar Cells by Low-Temperature Process Using Sodium Compounds

T. Nakada, T. Kume, A. KuniokaAoyama Gakuin Univ., Japan

P-II-D-60

XPS Analysis of CdS/CuInSe2 Heterojunctions

Y. Okano, T. Nakada, A. KuniokaAoyama Gakuin Univ., Japan

P-II-D-62

Investigation of Solid State Pb Doped TiO2 Solar Cell

Md. Mosaddeq-ur-Rahman, K.M. Krishna, T. Miki*, T. Soga, K. Igarashi*, S. Tanemura., M. UmenoNagoya Inst. of Tech., Japan *National Ind. Research Inst. of Nagoya, Japan

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■ ID-V and Space Cells -II

P-II-D-63

Analysis of Impurity Diffusion from Tunnel Diodes and Optimization for Operation in Tandem Cells

M. Okamoto, N. Kojima, S.J. Taylor, M-J. Yang, M. Yamaguchi, K. Takahashi*, T. Unno.Toyota Tech. Inst., Japan *Hitachi Cable, Ltd., Japan

P-II-D-64

Optimizing Gallium Arsenide Multiple Quantum Wells as High Performance Photovoltaic Devices

A. Thilagam, J. Singh, P. StulikNorthern Territory Univ., Australia

P-II-D-65

Numerical Analysis of Solar Cells with InGaAs/GaAs Multi-Quantum Wells under Concentrated Sunlight

H. Ohtsuka, T. Kitatani, Y. Yazawa, T. WarabisakoHitachi, Ltd., Japan

P-II-D-66Material and Structural Parameter Dependencies of Photon Recycling Effects in Conventional n+-p InP Solar Cell

A. Y amamoto, Md.M. Murshid, M. Kurizuka, M Ohkubo, A. HashimotoFukui Univ., Japan

P-II-D-67

Heavy Doping Characteristics of InGaP for High-Efficiency 2-Terminal Tandem Solar Cell

K. Nakamura, T. Fuyuki, H. MatsunamiKyoto Univ., Japan

P-II-D-68

Study on GaAs/GaAIAs MQW Structure for Photovoltaic Applications

S. Sopitpan, U. Manmontri, S. Thainoi, P. Cheewatas, S. Rattanathammapan, S. PanyakeowChulalongkom Univ., Thailand

P-II-D-69

Properties of Si, GaAs-on-Ge and GaAs-on-Si Solar Cells under Concentrated Sunlight

M. Y ang, M. Imaizumi, M. Y amaguchi, K. Izumi*, S. Matsunaga**Toyota Tech. Inst., Japan *IDEX, Japan **Aichi Pref. Ind. Tech. Center, Japan

P-II-D-70

Nitrogen Ion Modification to the Surface of InP by Flash Evaporation

H. Tanaka, H. Kubota, T. Ohgami, T. Itai, T. Sumita, Y. Honda, M. NagataKumamoto Univ., Japan

P-II-D-71 Improvement of Life Time of Minority Carriers in GaAs Epi-Layer Grown on Ge Substrate

K. Takahashi, S. Yamada, R Nakazono, Y. Minagawa, T. Matsuda, T. Unno, S. KumaHitachi Cable, Ltd., Japan

P-II-D-72

Thermal Stability of GaAs Tunnel Junctions Using Carbon as a p-Type Dopant

S. Gotoh, T. Ueda, H. Kakinuma, M. AkiyamaOki Electric Industry Co., Ltd., Japan

P-II-D-73

Improved Uniformity of the Characteristics of InGaP/GaAs Tandem Solar Cells in a Wafer

E. Ikeda, T. Takamoto, H. Kurita, M. OhmoriJapan Energy Corp., Japan

P-II-D-74

GaSb Based Solar Cells

S.V. Sorokina, MZ. Shvarts, V.I. Vasil'evRussian Academy of Sci., Russia

P-II-D-75

GaAs Based Solar Cells with Extremely Thin (28nm) Window Layers Fabricated by Low Temperature LPE

V.P. Khvostikov, A.M. Mintairov, V.D. RumyantsevRussian Academy of Sci., Russia

P-II-D-76

Characterization of Vacuum-Evaporated Tin Selenide for Solar Cell Materials

Y. Tsukino, J. Noguchi, H. Tanamura, T. Nagatomo, O.OmotoShibaura Inst. of Tech., Japan System Applications and Evaluation

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■ System Applications and Evaluation

P-II-D-77

Evaluation of Outdoor Performances in Amorphous Silicon and Polycrystalline Silicon PV Modules

K. Akhmad, A Kitamura., F. Yamamoto*, H. Okamoto, H. Takakura**, Y. Hamakawa**Osaka Univ., Japan *Kansai Electrical Power Inc., Japan **Ritsumeikan Univ., Japan

P-II-D-80

Evaluation of Equivalent Circuit Parameters of PV Module and Its Application to Optimization of PV System

H. Kitazato, T.Ikegami. Y. Yamagata, K. Ebihara Kumamoto Univ., Japan

P-II-D-81

European Rural and Other Off-Grid Electrifications

G. Riesch Joint Research Centre, Ispra, Italy

P-II-D-82

Healthy Industrial City in Centuary 21 Using Renewable Energy Sources

F.H.FahmyElectronics Research Inst., Egypt

P-II-D-83

A Development of High Accuracy and Wide Range Modular PV Array Simulator

K. Takigawa, H. KobayashiCentral Research Inst. of Electric Power Ind., Japan

P-II-D-84

SPV-Diesel Hybrid Power Systems -A Techno Economic Analysis Based on a Project Implementation in India

M.R Narayanan, P. Jayakumar, C.V. Nayar*Modem Malleables Ltd., India *Curtin Univ. of Tech., Australia

P-II-D-85

A Study of Estimating the Generated Power on Photovoltaic Power Generation System

S. Ishihara, K. Harada, Y. Ishihara, T. TodakaDoshisha Univ., Japan

P-II-D-86

A Simulation of the Introduction of the Photovoltaic Power Generation System to a Public Institution -In the Case of Tanabe Campus of Doshisha University

Y. Endo, K. Harada, Y. Ishihara, T. TodakaDoshisha Univ., Japan

P-II-D-87

Application of Utility Interactive Photovoltaic Power Generation System for UPS

S. Nonaka, K. HatadaKinki Univ., Japan

P-II-D-88 Photovoltaic Diesel-Generator Hybrid Power System Sizing

S.H. El-Hefnawi, O. Mahgoub*, M.B. ZahranElectronics Research Inst., Egypt *Cairo Univ., Egypt

P-II-D-89

Remote Monitoring for PV-Diesel Hybrid System in Island Electrification in Korea

M.-G. Lee, M-W. Jung, I.-H. Hwang*Korea Inst. of Energy Research, Korea *Korea Electric Power Research Inst., Korea

P-II-D-90

Study on Areal Solar Irradiance for Analyzing Areally-Totalized PV Systems

K. Otani, J. Minowa*, K. Kurokawa*Electrotechnical Lab., Japan *Tokyo Univ. of Agri. and Tech., Japan

P-II-D-92

Novel Application of Amorphous Silicon Flexible Solar Cell as Battery Charger for Personnel Mobile Telephone

D. Kruangam, B. Ratwises, T. Sujaridchai, S. PanyakeowChulalongkom Univ., Thailand

P-II-D-93

ESTI-LOG : PV Plant Monitoring System

C. Helmke, M. Lundqvist, H.A. OssenbrinkJoint Research Centre, Italy

P-II-D-94

Application of Photovoltaic Systems for Rural Electrification at Remote Islands

I. Hwang, J. Song*Korea Electric Power Research Inst., Korea *Korea Inst. of Energy Research, Korea

P-II-D-95

500kW PV Power Plant

S.M. Karabanov, A.S. Tyutyunnik, E.V. KomarovGelion Ltd., Russia

P-II-D-96

Effect of Concentration Distribution on Low-Concentration Cell Performance with a New Three-Dimensional Lens

S. Goma, K. Yoshioka, T. SaitohTokyo Univ. of Agri. and Tech., Japan

P-II-D-97

Operational Experience with the a-Si PV Electric Vehicle Inductive Charging Facility in Santa Monica California

J.G. Ingersoll, C.A. Perkins*Helios International, Inc., USA *City of Santa Monica, USA

P-II-D-98

AC Side Harmonics Accompanying DC Injection of Utility-Interactive PV System

K. Akhmad, H. Okamoto, A Kitamura*, H. Matsuda*, F. Yamamoto*, T.Miura*, T. Matsuoka*Osaka Univ., Japan *Kansai Electric Power Co., Inc., Japan

P-II-D-99

Analysis of Operating Efficiency for Photovoltaic System of Remote Islands

G.-B. Cho, H.-L. Baek, H.-S. Chung, M.-G. Lee*, M.-W. Jung*Chosun Univ., Korea *Korea Inst. of Energy Research. Korea

P-II-D-100

PV-Systems for Water Pumping in Libya

A.S. Kagilik, M.A. AltayefCenter for Solar Energy Studies, Libya

P-II-D-101

The Sizing of Stand-Alone Photovoltaic Power Systems

K.O. Alamin, I.F. La-azebiCenter for Solar Energy Studies, Libya

P-II-D-102

On the Assessment of Stability Improvement of PV/ Conventional AC / DC Power System

F.M Ghali, M Said Abdel-Moteleb, H.A. El-KhashabElectronics Research Inst., Egypt

P-II-D-103

The Future of Photovoltaics Telecommunications Integrated System (TIS)

J.H. Frost, IIR.A. Energy Co., USA

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■ Session LN Late News

LN-1

High Rate Deposition of Amorphous and Microcrystalline Silicon Films by SiH2CI2-SiH4-H2 Plasma

H. Shirai, T. Arai, T. NakamuraSaitama Univ., Japan

LN-2

Effects of Post-Deposition Treatment on the PL-Spectra and the Hydrogen Content of CuInS2 Absorber Layers

K. Töpper, J. Krauser, J. Bruns, R. Scheer, A. Weidinger, D. BntunigHahn-Meitner-Institut, Gennany

LN-3

Crystal Growth of CuGaxIn1-xSe2 by Horizontal Bridgman Method

W.W. Lam, I. ShihMcGill Univ., Canada

LN-4

Growth Mechanism and Characterization of Cu(InAl)Se2 by Vacum Evaporation

F. Itoh, O. Saitoh, M. Kita, H. Nagamori, H. OikeGunma Univ., Japan

LN-5

Temperature Dependence of Photoacoustic Spectra in CuInSe2 Thin Films Grown by Molecular Beam Epitaxy

K. Yoshino, T. Shimizu, A. Fukuyama, K. Maeda, P.J. Fons*, A. Yamada*, S. Niki*, T. IkariMiyazaki Univ., Japan *Electrotechnical Lab., Japan

LN-6

Window Layers for GaInP2 Solar Cells for Tandem Space Cell Applications

R.K. Jain, J. Lammasniemi*, R. Jaakkola*, A. Kazantsev*NASA Lewis Research Center, USA *Tampere Univ. of Tech., Finland

LN-7

GaInP Single-Junction and GaInP/GaAs Two Junction Thin-Film Solar Cell Structures by Epitaxial Lift-Off

Y. Yazawa, K. Tamura, S. Watahiki, T. Kitatani, J. Minemura, T. WarabisakoHitachi, Ltd., Japan

LN-8

Economic Studies on the Application of Grid Connected Photovoltaic System in Taiwan

K.C. Hsu, W.J. ChangInd. Tech. Research Inst., Taiwan

LN-9

The Use of Photovoltaic Generation System for Telecommunications Power Source

T. Akai, T. Hidaka, M. Yoshida, Y. KawagoeNIT Power and Building Facilities Inc., Japan

LN-10

Secular Degradation of Crystalline Photovoltaic Modules

T. Hirasawa, K. Machida*, T. Yamazaki*Kandenko Co., Ltd., Japan *Tokyo Electric Power Co., Japan

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■ Session PL-II Plenary Lecture-II

PL-II-1

Advances in Space Photovoltaic Technology

D.J. FloodNASA Lewis Research Center, USA

PL-II-2

World Renewable Energy Network (WREN) a Major Institution for Renewable Energy Promotion

A. SayighDirector General of WREN, U.K.

PL-II-3

Areal Evolution of PV Systems

K. KurokawaTokyo Univ. of Agri. and Tech., Japan

PL-II-4

Cost Reduction in PV Manufacturing - Impact on Grid-Conected and Building Integrated Markets

P.D. MaycockPV Energy Systems, Inc., USA

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