Publications - HQ grapheneDual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron...

Publications

company name: hq graphene; company registration number: KvK 59652233; VAT number: NL853589318B01

Terms and Conditions are available at www.hqgraphene.com

Exporter and Manufacturer : HQ Graphene

Adress: G.Meirstraat 1, 9728TB Groningen, The Netherlands

Telephone: +31619644049

Email: [email protected], Website: www.hqgraphene.com

Publications

HQ Graphene is a manufacturer of high quality 2D single crystals, selling directly to over 190 universities,

research institutes and companies worldwide. Our customers are scientists demanding high purity and

high quality crystals for scientific research. A list of peer reviewed publications and manuscripts found on

arXiv using our crystals can be found on this document.

Important note

This list is regularly updated. In order to provide a complete list we would like to ask our customers to notify us

of any results that were published using the crystals from HQ Graphene. In addition to providing valuable

information to fellow researchers this will generate additional visibility to the listed publications.

Bi2Se3

Siyuan Luo et al., Nat. Comm. 8, 2141 (2017)

Spin-momentum locked interaction between guided photons and surface electrons in topological insulators

Siyuan Luo, AIP Conference Proceedings 1955, 040086 (2018)

Infrared circular photogalvanic effect in topological insulators

Black Phosphorus

Yanpeng Liu et al., Nano Lett, Article ASAP (February 14, 2017)

Gate-Tunable Giant Stark Effect in Few-Layer Black Phosphorus

E. Golias et al., PRB 93, 075207 (2016)

Disentangling bulk from surface contributions in the electronic structure of black phosphorus

Steven P. Koenig et al., Nanoletters 16 (4), pp 2145–2151 (2016)

Electron Doping of Ultrathin Black Phosphorus with Cu Adatoms

Luis Henrique de Lima et al., PRB 93, 035448 (2016)

Surface Structure Determination of Black Phosphorus Using Photoelectron Diffraction

Hyejin Jang et al., Adv. Mat. 27, 8017-8022 (2015)

Anisotropic Thermal Conductivity of Exfoliated Black Phosphorus

Joohoon Kang et al., ACS Nano 9 (4), 3596-3604 (2015)

Solvent Exfoliation of Electronic-Grade, Two-Dimensional Black Phosphorus

Jimin Kim et al., Science 349 (6249), 723-726 (2015)

Observation of tunable band gap and anisotropic Dirac semimetal state in black phosphorus

Publications



Yanlong Wang et al., Nano Research 8 (12), 3944-3953 (2015)

Remarkable anisotropic phonon response in uniaxially strained few-layer black phosphorus

A. Mishchenko et al., Nano Lett. 15 (10), 6991-6995 (2015)

Nonlocal Response and Anamorphosis: The Case of Few-Layer Black Phosphorus

Shumao Cui et al., Nature Comm. 6, 8632 (2015)

Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors

Y. Cao et al., Nano Lett. 15 (8), 4914-4921 (2015)

Quality Heterostructures from Two-Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere

Joohoon Kang et al., PNAS Early Edition

Stable aqueous dispersions of optically and electronically active phosphorene

Bo Sun et al., arXiv:1606.05984 (2016)

Temperature dependence of anisotropic thermal conductivity tensor of bulk black phosphorus

William S. Whitney et al., arXiv:1608.02561 (2016)

Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus

Guowei Zhang et al., arXiv:1607.08049 (2016)

Infrared fingerprints of few-layer black phosphorus

A. Sanna et al. 2D Mat.3 (2), (2016)

First-principles and angle-resolved photoemission study of lithium doped metallic black phosphorous

Yury Yuryevich Illarionov et al., ACS Nano (2016)

Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors

Xiaolong Liu et al., Adv. Mater. (2016)

Scanning Probe Nanopatterning and Layer-by-Layer Thinning of Black Phosphorus

Yuan Huang et al., ACS Chem. Mater. (2016)

Interaction of Black Phosphorus with Oxygen and Water

Kah-Wee Ang et al., 2015 IEEE International Conference on Digital Signal Processing (DSP), Singapore, 2015, pp.

1223-1226

Next Generation Field-Effect Transistors Based on 2D Black Phosphorus Crystal

Zhi-Peng Ling et al., Sci Rep. 2015; 5: 18000

Black Phosphorus Transistors with Near Band Edge Contact Schottky Barrier

Vlada Artel et al., arXiv:1611.03452 (2016)

Protective Molecular Passivation of Black Phosphorous

Bo Sun et al., Adv. Mat. (2016)

Temperature Dependence of Anisotropic Thermal-Conductivity Tensor of Bulk Black Phosphorus

Amit Prakash et al., Small (2016)

Black Phosphorus N-Type Field-Effect Transistor with Ultrahigh Electron Mobility via Aluminum Adatoms Doping

N. Ehlen et al., Phys. Rev. B 94, 245410 (2016)

Evolution of electronic structure of few-layer phosphorene from angle-resolved photoemission spectroscopy of black

phosphorous

William S. Whitney et al., Nanolett. (2016)

Publications



Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus

Yuanda Liu et al., Adv. Funct. Mater. 1604638 (2017)

Al-Doped Black Phosphorus p–n Homojunction Diode for High Performance Photovoltaic

Brian Kiraly et al., arXiv:1702.06753 (2017)

Probing Single Vacancies in Black Phosphorus at the Atomic Level

Shi-Li Yan et al., Chinese Physics Letters, Volume 34, Number 4 (2017)

Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistor

Guowei Zhang et al., Nat Commun. 8: 14071 (2017)

Infrared fingerprints of few-layer black phosphorus

Yongsuk Choi et al., ACS Chem. Mater., 29 (9), pp 4008–4013 (2017)

Low-Voltage 2D Material Field-Effect Transistors Enabled by Ion Gel Capacitive Coupling

Anton Autere et al., J. Phys. Chem. Lett., 8 (7), pp 1343–1350 (2017)

Rapid and Large-Area Characterization of Exfoliated Black Phosphorus Using Third-Harmonic Generation

Microscopy

Brian Kiraly et al., Nano Lett., 17 (6), pp 3607–3612 (2017)

Probing Single Vacancies in Black Phosphorus at the Atomic Level

Ahmet Avsar et al., Nature Physics (2017)

Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes

Can Wang et al., J. Phys. Chem. C, Article ASAP (2017)

Charge Transfer at the PTCDA/Black Phosphorus Interface

Yu. Yu. Illarionov et al., npj 2D Materials and Applications 1:23 (2017)

Highly-stable black phosphorus field-effect transistors with low density of oxide traps

Can Wang et al., The Journal of Chemical Physics 147, 064702 (2017)

Electronic structures at the interface between CuPc and black phosphorus

Jimin Kim et al., Journal of Electron Spectroscopy and Related Phenomena, Volume 219, Pages 86-91 (2017)

Electronic and structure of surface-doped black phosphorus

Guihua Zhou et al., Sensors and Actuators B: Chemical, Volume 257, Pages 214-219 (2018)

Real-time electronic sensor based on black phosphorus/Au NPs/DTT hybrid structure: Application in arsenic

detection

Guowei Zhang et al., arXiv:1711.01713 (2107)

Determination of layer-dependent exciton binding energies in few-layer black phosphorus

J.V. Riffle et al., arXiv:1712.08491 (2017)

Imaging atomic vacancies in commercially available black phosphorus

Vlada Artel et al., npj 2D Materials and Applicationsvolume 1, 6 (2017)

Protective molecular passivation of black phosphorus

Jimin Kim et al., PRL 119, 226801 (2017)

Two-Dimensional Dirac Fermions Protected by Space-Time Inversion Symmetry in Black Phosphorus

Xiaolong Chen et al., Nat. Comm. 8, 1672 (2017)

Widely tunable black phosphorus mid-infrared photodetector

Publications



Hyun-Soo Ra et al., ACS Appl. Mater. Interfaces 10 (1), pp 925–932 (2018)

Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation

Layers

J. V. Riffle et al., Journal of Applied Physics 123, 044301 (2018)

Impact of vacancies on electronic properties of black phosphorus probed by STM

Juan Gómez-Pérez et al., Nanotechnology 29 (2018)

Acetone improves the topographical homogeneity of liquid phase exfoliated few-layer black phosphorus flakes

Yanpeng Liu et al., Nature Nanotechnology 13, 828–834 (2018)

Tailoring sample-wide pseudo-magnetic fields on a graphene–black phosphorus heterostructure

P. Di Pietro et al., arXiv:1804.07066 (2018)

Emergent Dirac carriers across a pressure-induced Lifshitz transition in black phosphorus

Zizhuo Liu et al., Nanotechnology 29 (2018)

Extrinsic polarization-controlled optical anisotropy in plasmon-black phosphorus coupled system

Zehua Hu et al., Adv. Mater. 1801931 (2018)

Abnormal Near‐Infrared Absorption in 2D Black Phosphorus Induced by Ag Nanoclusters Surface Functionalization

Yanpeng Liu et al., Nano Lett., 18 (6), pp 3377–3383 (2018)

Phonon-Mediated Colossal Magnetoresistance in Graphene/Black Phosphorus Heterostructures

Wugang Liao et al., Nanoscale 36 (2018)

Efficient and reliable surface charge transfer doping of black phosphorus via atomic layer deposited MgO toward high

performance complementary circuits

Brian Kiraly et al., Nature Communications 9, 3904 (2018)

An orbitally derived single-atom magnetic memory

Jingbo Chang et al., Nanotechnology 29, 37 (2018)

Impedimetric phosphorene field-effect transistors for rapid detection of lead ions

Guowei Zhang et al., Science Advances 4, 3, (2018)

Determination of layer-dependent exciton binding energies in few-layer black phosphorus

A-Young Lee et al., ACS Appl. Mater. Interfaces, 10 (18), pp

Hybrid Black Phosphorus/Zero-Dimensional Quantum Dot Phototransistors: Tunable Photodoping and Enhanced

Photoresponsivity

Xianchong Miao et al., Nano Lett., 18 (5), pp 3053–3059 (2018)

Layer-Dependent Ultrafast Carrier and Coherent Phonon Dynamics in Black Phosphorus

Jing Li et al., Chem. Mater. 30 (8), pp 2742–2749 (2018)

Ultrafast Electrochemical Expansion of Black Phosphorus toward High-Yield Synthesis of Few-Layer Phosphorene

Can Wang et al., J. Phys. Chem. Lett. 9 (18), pp 5254–5261 (2018)

Energy Level Evolution and Oxygen Exposure of Fullerene/Black Phosphorus Interface

Juan Gómez-Pérez et al., ACS Omega 3 (10), pp 12482–12488 (2018)

Quantitative Tracking of the Oxidation of Black Phosphorus in the Few-Layer Regime

Pingwei Liu et al., Nature Materials 17, 1005–1012 (2018)

Autoperforation of 2D materials for generating two-terminal memristive Janus particles

Publications



Nick Clark et al., Nano Lett. 18 (9), pp 5373–5381 (2018)

Scalable Patterning of Encapsulated Black Phosphorus

Jingbo Chang et al., Mol. Syst. Des. Eng., 2019, Advance Article (2018)

Semi-quantitative design of black

phosphorous field-effect transistor sensors for heavy metal ion detection in aqueous media

Weinan Zhu et al., ACS Nano 12 (12), pp 12512–12522 (2018)

Anisotropic Electron–Phonon Interactions in Angle-Resolved Raman Study of Strained Black Phosphorus

Bensong Wan et al., Science Bulletin 64, 4, 254-260 (2019)

Investigating the interlayer electron transport and its influence on the whole electric properties of black phosphorus

Rong-Si Wu et al., Journal of Pharmaceutical Sciences (2019)

PH-sensitive Black Phosphorous Incorporated Hydrogel as Novel Implant for Cancer Treatment

Can Wang et al., J. Phys. Chem. C, Article ASAP (2019)

Interface Energy-Level Alignment between Black Phosphorus and F16CuPc Molecular Films

S. Roth et al. 2D Materials (2019)

Photocarrier-induced band-gap renormalization and ultrafast charge dynamics in black phosphorus

Yuda Zhao et al., ACS Nano, Article ASAP (2019)

A Universal Approach toward Light-Responsive Two-Dimensional Electronics:Chemically Tailored Hybrid van der

WaalsHeterostructures

Luis Vaquero-Garzon et al., Nanoscale, 11, 12080-12086 (2019)

Anisotropic buckling of few-layer black phosphorus

Wenkai Zhu et al., Journal of Semiconductors 40, 092001 (2019)

Broadband polarized photodetector based on p-BP/n-ReS2 heterojunction

Shenyang Huang et al., Nature Communications 10, 2447 (2019)

Strain-tunable van der Waals interactionsin few-layer black phosphorus

Junjia Wang et al., arXiv:1906.10676 (2019)

Spectral responsivity and photoconductive gain in thin film black phosphorus photodetectors

Rui Guo et al., Applied Surface Science 496 (2019)

Surface passivation of black phosphorus via van der Waals stacked PTCDA



Ye Wang et al., Small (2019)

Tuning the Optical and Electrical Properties of Few‐Layer Black Phosphorus via Physisorption of Small Solvent

Molecules

Brian Kiraly et al., arXiv:1906.02627 (2019)

Anisotropic two-dimensional screening at the surface of black phosphorus

Juan Fernando Gómez Pérez, thesis (2019)

Experimental studies on the exfoliation and oxidation behavior of few-layers black phosphorus

William Whitney, thesis (2019)

lectrically-Tunable Light-Matter Interactions in Quantum Materials

Publications



Alexandre Favron, thesis (2019)

Photo-oxydation et spectroscopie Raman de couches minces de phosphore noir

CrBr3

D. Ghazaryan et al., Nature Electronics 1, 344–349 (2018)

Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3

Hyun Ho Kim et al., arXiv:1903.01409 (2019)

Evolution of interlayer and intralayer magnetism in three atomically thin chromium trihalides

Minsoo Kim et al., arXiv:1902.06988 (2019)

Hall micromagnetometry of individual two-dimensional ferromagnets

Hyun Ho Kim et al., PNAS June 4, 116 (23) 11131-11136 (2019)



Tailored tunnel magnetoresistance response in three ultrathin chromium trihalides

Hyun Ho Kim et al., Nano Lett. 19, 8, 5739-5745 (2019)

Tailored Tunnel Magnetoresistance Response in Three Ultrathin Chromium Trihalides

Dinesh Baral et al., arXiv:1909.00074 (2019)

Multi-peak Electronic Density of States in CrBr3 Revealed by Scanning Tunneling Microscopy

Cr2Ge2Te6 (CrGeTe3)

Bogdan Karpiak et al., arXiv:1908.05524 (2019)

Magnetic proximity in a van der Waals heterostructure of magnetic insulator and graphene

J. Escolar et al., Phys. Rev. B 100, 054420 (2019)

Anisotropic magnetoconductance and Coulomb blockade in defect engineered Cr2Ge2Te6 van der Waals

heterostructures

CrI3

Shengwei Jiang et al., arXiv:1802.07355 (2018)

Controlling magnetism in 2D CrI3 by electrostatic doping

Andreas Frisk et al., Materials Letters 232, 5-7 (2018)

Magnetic X-ray spectroscopy of two-dimensional CrI3 layers


Spin transistor built on 2D van der Waals heterostructures

Shengwei Jiang et al., Nature Nanotechnology 13, 549–553 (2018)


Publications



Shengwei Jiang et al., Nature Materials 17, 406–410 (2018)

Electric-field switching of two-dimensional van der Waals magnets

Shengwei Jiang et al., Nature Electronics 2, 159–163 (2019)

Spin tunnel field-effect transistors based on two-dimensional van der Waals heterostructures

Fe3GeTe2

Luojun Du et al., arXiv:1909.01598 (2019)

Lattice dynamics, phonon chirality and spin-phonon coupling in 2D itinerant ferromagnet Fe3GeTe2

FePS3

Fariborz Kargar et al., arXiv:1908.05186 (2019)

Phonon and Thermal Properties of Quasi-Two-Dimensional FePS3 and MnPS3 Antiferromagnetic Semiconductor

Materials

GaS

Szymon J. Zelewski and Robert Kudrawiec, Scientific Reports 7, Article number: 15365 (2017)

Photoacoustic and modulated reflectance studies of indirect and direct band gap in van der Waals crystals

GaSe

J.Y. Tan, APL 104, 183504 (2014)

Electronic transport in graphene-based heterostructures

Hai Huang et al., APL 107, 143112 (2015)

Highly sensitive phototransistor based on GaSe nanosheets

Pil Ju Ko et al., Nanotechnology 27 (32), 325202 (2016)

Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector

Yecun Wu et al., Adv. Mater. Technol., 1600197, (2016)

Quantum Confinement and Gas Sensing of Mechanically Exfoliated GaSe

Yecun Wu et al., Nano Energy 32, 157-164 (2017)

Simultaneous large continuous band gap tunability and photoluminescence enhancement in GaSe nanosheets via

elastic strain engineering



Duan Zhang et al., Materials 10(11), 1282 (2017)

Temperature-Dependent Photoluminescence Emission from Unstrained and Strained GaSe Nanosheets

Abdelkader Abderrahmane et al., Optical Materials Express 7, 2, pp. 587-592 (2017)

Gate-tunable optoelectronic properties of a nano-layered GaSe photodetector

Publications



David Maeso et al., Nanotechnology 30, 24 (2019)

Strong modulation of optical properties in rippled 2D GaSe via strain engineering

GeS



H. B. Ribeiro et al., Phys. Rev. B 100, 094301 (2019)

Edge phonons in layered orthorhombic GeS and GeSe monochalcogenides

GeSe

TONG XUN JIE Bachelor thesis (2016)

Investigation of low dimensional GeSe structures for optoelectronics

Zhenyu Yang et al., Nano Energy 49, 103-108 (2018)

WSe2/GeSe heterojunction photodiode with giant gate tunability

Yusi Yang et al., Adv. Opt. Mat. (2018)

In‐Plane Optical Anisotropy of Low‐Symmetry 2D GeSe

Zhen Jiao et al., Surface Science 686, 17-21 (2019)

Structural and electronic properties of the α-GeSe surface

H. B. Ribeiro et al., Phys. Rev. B 100, 094301 (2019)

Edge phonons in layered orthorhombic GeS and GeSe monochalcogenides

Graphite

Hang Yang et al., 1650141 Nano (2016)

Ultraviolet-Ozone Treatment for Effectively Removing Adhesive Residue on Graphene

Soonyoung Cha et al., Nature Nanotechnology (2018)

Generation, transport and detection of valley-locked spin photocurrent in WSe2–graphene–Bi2Se3

heterostructures

Yue Liu et al., Frontiers of Physics (2018)

Probing interlayer interactions in WSe2-graphene heterostructures by ultralow-frequency Raman

spectroscopy

Xiangzhe Zhang et al., Nanotechnology, Volume 30, Number 43 (2019)

In-plane anisotropy in twisted bilayer graphene probed by Raman spectroscopy

Chao Feng et al., Nano Research pp. 1-5 (2019)

Magnetic logic inverter from crossed structures of defect-free graphene with large unsaturated room

temperature negative magnetoresistance

Dongryul Lee et al., RSC Adv. 9, 18326-18332 (2019)

High-energy proton irradiation damage on two-dimensional hexagonal boron nitride

Publications



Jie Gu et al., arXiv:1905.12227 (2019)

A Room Temperature Polariton Light-Emitting Diode Based on Monolayer WS2

Ruiqing Cheng et al., Adv.Mater. 31, 1901144 (2019)

Anti-Ambipolar Transport with Large Electrical Modulation in 2D Heterostructured Devices

Graphite (Natural)

Hang Yang et al., 1650141 Nano (2016)

Ultraviolet-Ozone Treatment for Effectively Removing Adhesive Residue on Graphene

Hexagonal boron nitide

Leonard Schue et al., Nanoscale 8, 6986-6993 (2016)

Dimensionality effects on the luminescence properties of hBN

G. Cassabois et al., Nature photonics 10, 262–266 (2016)

Hexagonal boron nitride is an indirect bandgap semiconductor

M. Gurram et al., PRB 93, 115441 (2016)

Spin transport in fully hexagonal boron nitride encapsulated graphene

Neeraj Mishra et al., Carbon 96, 497–502 (2016)

Rapid and catalyst-free van der Waals epitaxy of graphene on hexagonal boron nitride

G. Cassabois et al., PRB 93, 035207 (2016)

Intervalley scattering in hexagonal boron nitride

P.J. Zomer et al., APL 105, 013101 (2014)

Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride

M.H.D. Guimaraes et al., PRL 113, 086602 (2014)

Controlling Spin Relaxation in Hexagonal BN-Encapsulated Graphene with a Transverse Electric Field

S.J. Hong et al., RSC Adv. 5, 103276-103279 (2015)

Competition between electron doping and short-range scattering in hydrogenated bilayer graphene on hexagonal

boron nitride

M. Lozada-Hidalgo et al., Science 351, 68 (2016)

Sieving hydrogen isotopes through two-dimensional crystals

E. Aradi et al., Radiation Effects and Defects in Solids: Incorporating Plasma Science and Plasma Technology 107

(3), 175-182 (2014)

Raman studies on the effect of multiple-energy ion implantation on single-crystal hexagonal boron nitride

S. Hu et al., Nature 516, 227-230 (2014)

Proton transport through one-atom-thick crystals

Chandan Kumar et al., Nano Lett. 16 (2), 1042–1049 (2016)

Tunability of 1/f Noise at Multiple Dirac Cones in hBN Encapsulated Graphene Devices

L. J. Martinez et al., PRB 94, 121405(R) (2016)

Effcient single photon emission from a high-purity hexagonal boron nitride crystal

Publications



T.Q.P. Vuong et al., PRL 117, 097402 (2016)

Phonon-Photon Mapping in a Color Center in Hexagonal Boron Nitride

Simranjeet Singh et al. APL 109, 122411 (2016)

Nanosecond spin relaxation times in single layer graphene spin valves with hexagonal boron nitride tunnel barriers

Annemarie L. Exarhos et al. arXiv:1609.02641 (2016)

Optical Signatures of Quantum Emitters in Suspended Hexagonal Boron Nitride

Vaidotas Miseikis et al., arXiv:1611.00923 (2016)

Deterministic patterned growth of high-mobility large-crystal graphene: a path towards wafer scale integration

Léonard Schué et al., 2D Materials, Volume 4, Number 1 (2016)

Characterization methods dedicated to nanometer-thick hBN layers

Ramon Cusco et al., PRB 94, 155435 (2016)

Temperature dependence of Raman-active phonons and anharmonic interactions in layered hexagonal BN

Alexey Yu. Nikitin et al., ACS Photonics, 2016, 3 (6), pp 924–929

Nanofocusing of Hyperbolic Phonon Polaritons in a Tapered Boron Nitride Slab

Filippo Pizzocchero et al., Nature Communications 7, 11894 (2016)

The hot pick-up technique for batch assembly of van der Waals heterostructures

S. Dufferwiel et al., Nature Communications 6, 8579 (2015)

Exciton–polaritons in van der Waals heterostructures embedded in tunable microcavities

T. Phanindra Sai et al., arXiv:1611.01181 (2016)

Current crowding driven-large contact noise in high-mobility graphene transistors

Alexander A. Govyadinov et al., arXiv:1611.05371 (2016)

Probing low-energy hyperbolic polaritons in van der Waals crystals with an electron microscope

K. Gołasa et al., ACTA PHYSICA POLONICA A, Vol. 130 (2016)

The Effect of Substrate on Vibrational Properties of Single-Layer MoS2

P. Li et al., Nano Lett. (2016)

Optical Nanoimaging of Hyperbolic Surface Polaritons at the Edges of van der Waals Materials

S. Dufferwiel et al., arXiv:1612.05073 (2016)

Valley addressable exciton-polaritons in atomically thin semiconductors

Gabriella D. Shepard et al., arXiv:1612.06416 (2016)

Nanobubble induced formation of quantum emitters in monolayer semiconductors

Taejin Park et al., RSC Adv., 7, 884-889 (2017)

Atomic layer deposition of Al2O3 on MoS2, WS2, WSe2, and h-BN: surface coverage and adsorption energy

Vaidotas Miseikis et al., 2D Materials (2017)

Deterministic patterned growth of high-mobility large-crystal graphene: a path towards wafer scale integration

S.J. Hong et al., RSC Adv., 7, 6013-6017 (2017)

Chemical manipulation of edge-contact and encapsulated graphene by dissociated hydrogen adsorption

Hugo Henck et al., PRB 95, 085410 (2017)

Publications



Direct observation of the band structure in bulk hexagonal boron nitride

T. Q. P. Vuong, Phys. Rev. B 95, 045207 (2017)

Overtones of interlayer shear modes in the phonon-assisted emission spectrum of hexagonal boron nitride

Mallikarjuna Gurram et al., arXiv:1704.01328 (2017)

Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN

heterostructures

Xiaoxi Li et al., arXiv:1704.06668 (2017)

Ambipolar gate-tunable diode based on tunnel-contacted atomically-thin MoS2

Annemarie L. Exarhos et al., ACS Nano, 11 (3), pp 3328–3336 (2017)

Optical Signatures of Quantum Emitters in Suspended Hexagonal Boron Nitride

T. Q. P. Vuong et al., Phys. Rev. B 95, 201202(R) (2017)

Exciton-phonon interaction in the strong-coupling regime in hexagonal boron nitride

F. J. Alfaro-Mozaz et al., Nat Commun. 2017; 8: 15624 (2017)

Nanoimaging of resonating hyperbolic polaritons in linear boron nitride antennas

Joeson Wong et al., ACS Nano, Article ASAP (2017)

High Photovoltaic Quantum Efficiency in Ultrathin van der Waals Heterostructures

Janghyuk Kim et al., ACS Appl. Mater. Interfaces, 9 (25), pp 21322–21327 (2017)

Quasi-Two-Dimensional h-BN/beta-Ga2O3 Heterostructure Metal–Insulator–Semiconductor Field-Effect Transistor

Onejae Sul et al., Nanotechnology (2017)

Selective Dirac voltage engineering of individual graphene field-effect transistors for digital inverter and frequency

multiplier integrations

Alexander A. Govyadinov et al., Nat. Commun. 8; 95 (2017)

Probing low-energy hyperbolic polaritons in van der Waals crystals with an electron microscope

M. Gurram et al., Nat Commun. 8: 248 (2017)

Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN

heterostructures

Talieh S. Ghiasi et al., arXiv:1708.04067 (2017)

Large Proximity-Induced Spin Lifetime Anisotropy in Transition Metal Dichalcogenide/Graphene Heterostructures

Tobias Vogl et al., Journal of Physics D: Applied Physics, Volume 50, Number 29 (2017)

Publications



Room temperature single photon source using fiber-integrated hexagonal boron nitride

Archana Raja et al., Nat Commun. 8: 15251 (2017)

Coulomb engineering of the bandgap and excitons in two-dimensional materials

Joachim Dahl Thomsen et al., Phys. Rev. B 96, 014101 (2017)

Suppression of intrinsic roughness in encapsulated graphene

Nicholas L. McDougall et al., Phys. Rev. B 96, 144106 (2017)

Influence of point defects on the near edge structure of hexagonal boron nitride

Joeson Wong et al., arXiv:1706.02700 (2017)


Xiao-Xi Li et al., Nature Communications 8, Article number: 970 (2017)

Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor

Qixing Wang et al., Nano Lett. Article ASAP (2017)

Fabry–Perot Cavity-Enhanced Optical Absorption in Ultrasensitive Tunable Photodiodes Based on Hybrid 2D

Materials

S. Dufferwiel et al., Nature Photonics 11, 497–501 (2017)

Valley-addressable polaritons in atomically thin semiconductors

Tianhua Ren et al., ACS Photonics 5, 353−358 (2018)

Whisper Gallery Modes in Monolayer Tungsten Disulfide-Hexagonal Boron Nitride Optical Cavity

Hyun-Soo Ra et al., ACS Appl. Mater. Interfaces 10 (1), pp 925–932 (2018)

Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation

Layers

Tobias Vogl et al., arXiv:1711.10246 (2017)

Enhancement of photophysical properties and deterministic transfer of quantum emitters in hexagonal boron nitride

Chen Pan et al., arXiv:1801.01742 (2018)

Analog Circuit Applications based on Ambipolar Graphene/MoTe2 Vertical Transistors

Abderrahmane, Abdelkader et al., Science of Advanced Materials, Volume 10, Number 5, pp. 627-631(5) (2018)

Optoelectronic Characterizations of Two-Dimensional h-BN/MoSe2 Heterostructures Based Photodetector



M. Gurram et al., Phys. Rev. B 97, 045411 (2018)

Spin transport in two-layer-CVD-hBN/graphene/hBN heterostructures

S. Omar et al., Phys. Rev. B 97, 045414 (2018)Spin transport in high-mobility graphene on WS2 substrate with

electric-field tunable proximity spin-orbit interaction

Paolo Pedrinazzi et al., Appl. Phys. Lett. 112, 033101 (2018)

High-quality graphene flakes exfoliated on a flat hydrophobic polymer

Jyoti Katoch et al., Nature Physics (2018)

Giant spin-splitting and gap renormalization driven by trions in single-layer WS2/h-BN heterostructures

Publications



Marta Autore et al., arXiv:1801.02897 (2018)

Boron nitride nanoresonators for phonon-enhanced molecular vibrational spectroscopy at the strong coupling limit

D. Vaclavkova et al., arXiv:1802.05538 (2018)

Singlet and triplet trions in WS2 monolayer encapsulated in hexagonal boron nitride

Hanh Ngoc My Duong et al., arXiv:1805.08589 (2018)

Effects of high energy electron irradiation on quantum emitters in hexagonal boron nitride

Chen Pan et al., Adv. Electron. Mater. 4, 1700662 (2018)

Analog Circuit Applications Based on Ambipolar Graphene/MoTe2 Vertical Transistors

Johannes Christian Leutenantsmeyer et al., PRB 98, 125422 (2018)

Bias-dependent spin injection into graphene on YIG through bilayer hBN tunnel barriers

Qixing Wang et al., Nano Lett., Article ASAP (2018)

Photoluminescence Upconversion by Defects in Hexagonal Boron Nitride

Xiaotong Chen et al., arXiv:1808.09984 (2018)

Entanglement of single-photons and chiral phonons in atomically thin WSe2

Alberto Ciarrocchi et al., arXiv:1803.06405 (2018)

Control of interlayer excitons in two-dimensional van der Waals heterostructures

Mengjian Zhu et al., APL 112, 183102 (2018)

Engineering few-layer MoTe2 devices by Co/hBN tunnel contacts

Annemarie L. Exarhos et al., arXiv:1804.09061 (2018)

Spin-Dependent Quantum Emission in Hexagonal Boron Nitride at Room Temperature


Spin transistor built on 2D van der Waals heterostructures

Shang Yu et al., arXiv:1806.03689 (2018)

Experimental realization of causality-assisted Wheeler's delayed-choice experiment using single photons

Shengwei Jiang et al., Nature Nanotechnology 13, 549–553 (2018)


Ting-Fung Chung et al., arXiv:1805.01454 (2018)

Transport measurements in twisted bilayer graphene: Electron-phonon coupling and Landau level crossing

Zhi Wang et al., Nature Nanotechnology 13, 554–559 (2018)

Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor

Mohsen Nasseri et al., Adv. Mater. Interfaces 1800793 (2018)

Aligned van der Waals Coupled Growth of Carbon Nanotubes to Hexagonal Boron Nitride

Hanh Ngoc My Duong et al., ACS Appl. Mater. Interfaces 10 (29), pp 24886–24891 (2018)

Effects of High-Energy Electron Irradiation on Quantum Emitters in Hexagonal Boron Nitride

Bien-Cuong Tran Khac et al., ACS Appl. Mater. Interfaces 10 (10), pp 9164–9177 (2018)

Interfacial Strength and Surface Damage Characteristics of Atomically Thin h‑BN, MoS2, and Graphene

Hong‐Hua Fang et al., Advanced Functional Materials 28, 21 (2018)

Publications



Unravelling Light‐Induced Degradation of Layered Perovskite Crystals and Design of Efficient Encapsulation for

Improved Photostability

Marta Autore et al., Light: Science & Applications 7, 17172 (2018)

Boron nitride nanoresonators for phonon-enhanced molecular vibrational spectroscopy at the strong coupling limit

Roland J. Koch et al., Phys. Rev. Materials 2, 074006 (2018)

Electronic structure of exfoliated and epitaxial hexagonal boron nitride

D. Vaclavkova et al., Nanotechnology 29, 32 (2018)


Sum-Gyun Yi et al., ACS Appl. Mater. Interfaces 10 (37), pp 31480–31487 (2018)

Artificial Synaptic Emulators Based on MoS2 Flash Memory Devices with Double Floating Gates

Xin Lu et al., arXiv:1810.01887 (2018)

Optical control of a single spin-valley in charged WSe2 quantum dots

Roland Kozubek et al., ACS Appl. Nano Mater. 1 (8), pp 3765–3773 (2018)

Fabrication of Defective Single Layers of Hexagonal Boron Nitride on Various Supports for Potential Applications in

Catalysis and DNA Sequencing

Xiaotong Chen et al., Nature Physics (2018)


E.Aradi et al., (2018) Diamond and Related Materials (2018)

Cross-sectional transmission electron microscopy studies of boron ion implantation in hexagonal boron nitride

Kai-Qiang Lin et al., arXiv:1811.09479 (2018)

Quantum interference in second-harmonic generation from monolayer WSe2

K. Gopinadhan et al., arXiv:1811.09227 (2018)

Complete steric exclusion of ions and proton transport through confined monolayer water

Yangdi Li et al., Nanotechnology 30, 3 (2018)

Advanced synthesis of highly crystallized hexagonal boron nitride by coupling polymer-derived ceramics and spark

plasma sintering processes—influence of the crystallization promoter and sintering temperature

Nicola Paradiso et al., arXiv:1811.06207 (2018)

Phase slip lines in superconducting few-layer NbSe2 crystals

F. J. Alfaro-Mozaz et al., Nature Communications 10, 42 (2019)

Deeply subwavelength phonon-polaritonic crystal made of a van der Waals material

Hanwen Wang et al. arXiv:1901.04262 (2019)

Gate tunable giant anisotropic resistance in ultra-thin GaTe

Kai-Qiang Lin et al., Nature Physics (2019)


Annemarie L. Exarhos et al., Nature Communications 10, 222 (2019)

Magnetic-field-dependent quantum emission in hexagonal boron nitride at room temperature



Mirko K. Rehmann et al., arXiv:1903.07002 (2019)

Publications



Characterization of Hydrogen Plasma Defined Graphene Edges

Xiaotong Chen et al., Nature Physics 15, 221–227 (2019)


E. Aradi et al., Diamond & Related Materials 92, 168–173 (2019)

Cross-sectional transmission electron microscopy studies of boron ionimplantation in hexagonal boron nitride

Zefei Wu et al., Nature Communications 10, 611 (2019)

Intrinsic valley Hall transport in atomically thin MoS2

Kaifei Kang et al., Nature Materials 18, 324–328 (2019)

Nonlinear anomalous Hall effect in few-layer WTe2

Nicola Paradiso et al., 2D Materials 6, 2 (2019)


Xin Lu et al., Nature Nanotechnology (2019)

Optical initialization of a single spin-valley in charged WSe2 quantum dots

Hyun Ho Kim et al., PNAS June 4, 116 (23) 11131-11136 (2019)


Sung Ju Hong et al., arXiv:1908.02420 (2019)

Disorder induced helical-edge transport near ν=0 of monolayer graphene

Sung Ju Hong et al., arXiv:1904.10476 (2019)

Tailored tunnel magnetoresistance response in three ultrathin chromium trihalides

Ji‐Yun Moon et al., Adv. Mater. Interfaces 6, 1900084 (2019)

An Eco‐Friendly, CMOS‐Compatible Transfer Process for Large‐Scale CVD‐Graphene

Fang Luo et al., ACS Photonics 6, 8, 2117-2125 (2019)

Graphene Thermal Emitter with Enhanced Joule Heating and Localized Light Emission in Air

Siddhartha Omar et al., arXiv:1907.01975 (2019)

Large spin-relaxation anisotropy in bilayer-graphene/WS2 heterostructures

Yoonhyuk Rah et al., Conference on Lasers and Electro-Optics, OSA Technical Digest, paper STh3O.2 (2019)

Birefringence and Dispersion Analysis of Hexagonal Boron Nitride (h-BN)

Hyun Ho Kim et al., Nano Lett. 19, 8, 5739-5745 (2019)

Tailored Tunnel Magnetoresistance Response in Three Ultrathin Chromium Trihalides

V. Kravtsov et al., arXiv:1905.13505 (2019)

Control of polariton linewidth in a monolayer semiconductor by employing optical bound states in the continuum

Nature Photonics 13, 131–136 (2019)

Polarization switching and electrical control of interlayer excitons in two-dimensional van der Waals heterostructures

Yoonhyuk Rah et al., Optics Letters 44, 15, pp. 3797-3800 (2019)

Optical analysis of the refractive index and birefringence of hexagonal boron nitride from the visible to near-infrared

Huawei Chen et al., Adv. Sci. 1901072 (2019)

Time‐Tailoring van der Waals Heterostructures for Human Memory System Programming

Hanwen Wang et al., Nature Communications 10, 2302 (2019)

Gate tunable giant anisotropic resistance in ultra-thin GaTe

Publications



Xin Huang et al., Nano Energy 62, 667-673 (2019)

Fabry-Perot cavity enhanced light-matter interactions in two-dimensional van der Waals heterostructure

Michael Seitz et al., Nanomaterials 9(8), 1120 (2019)

Long-Term Stabilization of Two-Dimensional Perovskites by Encapsulation with Hexagonal Boron Nitride

P. Pons-Valencia et al., Nature Communications 10, 3242 (2019)

Launching of hyperbolic phonon-polaritons in h-BN slabs by resonant metal plasmonic antennas

Matěj Velický et al., ChemRxiv 2019

Marcus-Hush Theory Revealed by Electron Tunneling Through Hexagonal Boron Nitride

Marie Krečmarová et al., Nanomaterials 9 (7), 1047 (2019)

Optical Contrast and Raman Spectroscopy Techniques Applied to Few-Layer 2D Hexagonal Boron Nitride

Miao-Ling Lin et al., Nature Communications 10, 2419 (2019)

Cross-dimensional electron-phonon coupling in van der Waals heterostructures

C. Elias et al., Nature Communications 10, 2639 (2019)

Direct band-gap crossover in epitaxial monolayer boron nitride

Torsten Stiehm et al., Review of Scientific Instruments 90, 083102 (2019)

Supercontinuum second harmonic generation spectroscopy of atomically thin semiconductors

Sung Hyun Kim et al., ACS Appl. Mater. Interfaces 11, 28, 25306-25312 (2019)

Multilevel MoS2 Optical Memory with Photoresponsive Top Floating Gates

Aleksandar Matković et al., Adv. Func. Mat. 1903816 (2019)

Light‐Assisted Charge Propagation in Networks of Organic Semiconductor Crystallites on Hexagonal Boron Nitride

T. Pelini et al., Phys. Rev. Materials 3, 094001 (2019)

Shallow and deep levels in carbon-doped hexagonal boron nitride crystals

L. Mogg et al., Nature Communications 10, 4243 (2019)

Perfect proton selectivity in ion transport through two-dimensional crystals

Talieh S. Ghiasi et al., Nano Lett. 19, 9, 5959–5966 (2019)

Charge-to-Spin Conversion by the Rashba–Edelstein Effect in Two-Dimensional van der Waals Heterostructures up

to Room Temperature

Yi-Tao Wang et al., arXiv:1906.00493 (2019)

A bubble-induced ultrastable and robust single-photon emitter in hexagonal boron nitride

Shang Yu et al., Phys. Rev. A 100, 012115 (2019)

Realization of a causal-modeled delayed-choice experiment using single photons

Matthew Holwill, Nanomechanics in van der Waals Heterostructures (thesis) pp 53-70, Online ISBN 978-3-030-

18529-9

Studying Superlattice Kinks via Electronic Transport


Charge-to-Spin Conversion by the Rashba-Edelstein Effect in 2D van der Waals Heterostructures up to Room

Temperature

William Whitney, thesis (2019)

Electrically-Tunable Light-Matter Interactions in Quantum Materials

Publications



HOPG graphite

J.C. Leutenantsmeyer, arXiv:1601:00995 (2016)

Proximity induced room-temperature ferromagnetism in graphene probed with spin currents

Johannes Christian Leutenantsmeyer et al., arXiv:1805.12420 (2018)

Observation of spin-valley coupling induced large spin lifetime anisotropy in bilayer graphene

D.I. Indolese et al., arXiv:1805.10184 (2018)

Signatures of van Hove singularities probed by the supercurrent in a graphene - hBN superlattice

Felix E. Schmidt et al., Nature Communications 9, 4069 (2018), arXiv:1806.11389 (2018)

A ballistic graphene superconducting microwave circuit

Linfeng Sun et al., Nature Communications 10, 3161 (2019)

Self-selective van der Waals heterostructures for large scale memory array

HOPG ZYA

Johannes Christian Leutenantsmeyer et al., arXiv:1808.00904 (2018)

Efficient spin injection into graphene through trilayer hBN tunnel barriers

Wei Gao et al., Nanoscale 28 (2019)

High performance tin diselenide photodetectors dependent on thickness: a vertical graphene sandwiched device and

interfacial mechanism

HOPG ZYB

S. Omar et al., Phys. Rev. B 97, 045414 (2018)

Spin transport in high-mobility graphene on WS2 substrate with electric-field tunable proximity spin-orbit interaction

Johannes Christian Leutenantsmeyer et al., PRB 98, 125422 (2018)

Bias-dependent spin injection into graphene on YIG through bilayer hBN tunnel barriers

Johannes Christian Leutenantsmeyer et al., Journal of Applied Physics 124, 194301 (2018)

Efficient spin injection into graphene through trilayer hBN tunnel barriers

Naresh Kumar et al., Nature Protocols 14, 1169–1193 (2019)

Nanoscale chemical imaging using tip-enhanced Raman spectroscopy



HfS2

Toru Kanazawa et al., Sci Rep. 2016, 6: 22277 (2016)

Few-layer HfS2 transistors

Kai Xu et al., Adv. Mat. 27, 7881-7887 (2015)

Ultrasensitive Phototransistors Based on Few-Layered HfS2

Publications



Gioele Mirabelli et al., J. Appl. Phys. 120, 125102 (2016)

Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2

Carsten Habenicht et al., Phys. Rev. B 98, 155204 (2018), arXiv:1808.01641 (2018)

Mapping of the energetically lowest exciton in bulk 1T−HfS2

Adolfo De Sanctis et al., Nature Communications 9, 1652 (2018)

Strain-engineered inverse charge-funnelling in layered semiconductors

HfSe2

Lei Yin et al., APL 109, 213105 (2016)

Ultrafast and ultrasensitive phototransistors based on few-layered HfSe2

Moonshik Kang et al. Nanoscale (2016)

Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatment



Scott Monaghan et al., Ultimate Integration on Silicon (EUROSOI-ULIS), (2017)

Hall-effect mobility for a selection of natural and synthetic 2D semiconductor crystals

Qirong Yao et al., J. Phys. Chem. C (2018)

Nanoscale Investigation of Defects and Oxidation of HfSe2

Liyuan Zhao et al., Materials Letters 243, 96–99 (2019)

Controlled surface oxidation of HfSe2via oxygen-plasma treatment

In2Se3

Guangjian Wu et al., Nanotechnology, 27 (36), 364002 (2016)

Visible to short wavelength infrared In2Se3-nanoflake photodetector gated by a ferroelectric polymer

In2Se3-beta

Changxi Zheng et al., Science Advances 4, 7, (2018)

Room temperature in-plane ferroelectricity in van der Waals In2Se3

MoS2

Oliver Ochedowski et al., Nucl. Instr. and Methods in Phys. Res. B 340, 39-43 (2014)

Folding two dimensional crystals by swift heavy ion irradiation

Jiong Yang et al., Light: Science & Applications 5, e16046 (2016)

Atomically thin optical lenses and gratings

S. Wang et al., arXiv:1604.06656 (2016)

Publications



Coherent Coupling of WS_2 Monolayers with Metallic Photonic Nanostructures at Room Temperature

Sung Ju Hong et al., AIP Advances 6, 085320 (2016)

Fabrication and independent control of patterned polymer gate for a few-layer WSe2 field-effect transistor

Xin He et al., Applied Physics Letters 109, 173105 (2016)

Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure

Yan Chen et al., ACS Appl. Mater. Interfaces (2016)

Optoelectronic Properties of Few-layer MoS2 FET Gated by Ferroelectric Relaxor Polymer

Beom Seo Kim et al., Scientific Reports 6, Article number: 36389 (2016)

Determination of the band parameters of bulk 2H-MX2 (M = Mo, W; X = S, Se) by angle-resolved photoemission

spectroscopy

Oliver Ochedowski et al., Beilstein J. Nanotechnol. 2014, 5, 291–297

Effect of contaminations and surface preparation on the work function of single layer MoS2



M. R. Molas et al., 2D Materials (2017), arXiv:1612.02867 (2016)

Brightening of dark excitons in monolayers of semiconducting transition metal dichalcogenides

Xiaoxi Li et al., arXiv:1704.06668 (2017)

Ambipolar gate-tunable diode based on tunnel-contacted atomically-thin MoS2

Roberto C Longo et al., 2D Mat., Volume 4, Number 2 (2017)

Intrinsic air stability mechanisms of two-dimensional transition metal dichalcogenide surfaces: basal versus edge

oxidation

Mingu Kang et al., Nanolett. 17 (3), pp 1610–1615 (2017)

Universal Mechanism of Band-Gap Engineering in Transition-Metal Dichalcogenides



Lan Liu et al., AIP Advances 7, 065121 (2017)

Electrical characterization of MoS2 field-effect transistors with different dielectric polymer gate

Rik van Bremen et al., Beilstein J. Nanotechnol., 8, 1952–1960 (2017)

Intercalation of Si between MoS2 layers

B. Schoenaers et al., AIP Advances 7, 105006 (2017)

ESR identification of the nitrogen acceptor in 2H-polytype synthetic MoS2: Dopant level and activation



D. Kwabena Bediako et al., arXiv:1711.03465 (2017)

Heterointerface effects in the electro-intercalation of van der Waals heterostructures

Sebastian Knust et al., Materials Today proceedings 4, S168–S173 (2017)

Measuring DNA Translocation Forces through MoS2-Nanopores with Optical Tweezers

Publications



Nur Baizura Mohamed et al., Appl. Phys. Express 11, 015201 (2018)

Long radiative lifetimes of excitons in monolayer transition-metal dichalcogenides MX 2 (M= Mo, W; X= S, Se)

Rakesh Sadanand Sharbidre et al., Korean Journal of Materials Research 27(12) (2018)

Reliable and High Spatial Resolution Method to Identify the Number of MoS2 Layers Using a Scanning Electron

Microscopy

Ben Schoenaers et al., PPS 14, 12 (2017)

The Nitrogen Acceptor in 2H-Polytype Synthetic MoS2: Frequency and Temperature Dependent ESR Analysis

George Kakavelakis et al., Adv. Energy Mater. 1702287 (2018)

Extending the Continuous Operating Lifetime of Perovskite Solar Cells with a Molybdenum Disulfide Hole

Extraction Interlayer


WSe2/GeSe heterojunction photodiode with giant gate tenability

Hans Tornatzky et al., arXiv:1809.03381 (2018)

Phonon dispersion of MoS2

D. Kwabena Bediako et al., Nature 558, 425–429 (2018)Heterointerface effects in the electrointercalation of van der

Waals heterostructures

Chen Wang et al., Nature 555, 231–236 (2018)

Monolayer atomic crystal molecular superlattices

Ben Schoenaers et al., Journal of Vacuum Science & Technology A 36, 05G503 (2018)Nitrogen acceptor in 2H-

polytype synthetic MoS2 assessed by multifrequency electron spin resonance

Mingu Kang et al., Nature Materials 17, 676–680 (2018)

Holstein polaron in a valley-degenerate two-dimensional semiconductor

A. O. Slobodeniuk et al., arXiv:1810.00623 (2018)

Fine structure of K-excitons in multilayers of transition metal dichalcogenides

Rizwan Khan et al., Chem. Mater., Article ASAP (2018)

Area-Selective Atomic Layer Deposition Using Si Precursors as Inhibitors

Patrick V. Mwonga et al., Phys. Chem. Chem. Phys. 20, 28232-28240 (2018)

Interrogating the effects of ion-implantation-induced defects on the energy storage properties of bulk molybdenum

disulphide

Ghazanfar Nazir et al., Nature Communications 9, 5371 (2018)

Ultimate limit in size and performance of WSe2 vertical diodes

Rahul Sharma et al., Appl. Mat. Today 13, 387-395 (2018)

Vapour transport deposition of fluorographene oxide films and electro-optical device applications

T.V. Shubina et al., arXiv:1811.01195 (2018)

Excitonic emission in van-der-Waals nanotubes of transition metal dichalcogenides

Dominik Andrzejewski et al., Nanoscale (2019)

WS2 Monolayer Based Light Emitting Devices in a Vertical p-n Architecture

Shiyu Wu et al., Science China Materials 62, 2, pp 181-193 (2019)

The influence of two-dimensional organic adlayer thickness on the ultralow frequency Raman spectra of transition

metal dichalcogenide nanosheets

Yan Wang et al., Nature 568, 70-74 (2019)

Publications



Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

A.O. Slobodeniuk et al., 2D Mater. 6, 025026 (2019)

Fine structure of K-excitons in multilayers of transition metal dichalcogenides

Hannah M. Gramling et al., ACS Appl. Electron. Mater. 1, 407−416 (2019)

Spatially Precise Transfer of Patterned Monolayer WS2 and MoS2 with Features Larger than 10^4 micron^2 Directly

from Multilayer Sources

Yongjae Cho et al., Nano Lett., Article ASAP (2019)

Impact of Organic Molecule-Induced Charge Transfer on Operating Voltage Control of Both n-MoS2 and p-MoTe2

Transistors

Hans Tornatzky et al., Phys. Rev. B 99, 144309 (2019)

Phonon dispersion in MoS2

F. Alex Cevallos et al., arXiv:1906.06769 (2019)

Single crystals of the layered dichalcogenides MoS2 and WS2 grown by liquid phase transport

Jia-Shiang Chen et al., ACSNano 13, 8461−8468 (2019)

Layer-Dependent Photoinduced Electron Transfer in 0D−2D Lead Sulfide/Cadmium Sulfide−Layered Molybdenum

Disulfide Hybrids

Huawei Chen et al., Adv. Sci. 1901072 (2019)

Time‐Tailoring van der Waals Heterostructures for Human Memory System Programming



Bum-Kyu Kim et al., arXiv:1904.10295 (2019)

Genuine Ohmic van der Waals contact between indium and MoS2

Wenhao Huang et al., Adv. Func. Mat. 29, 36, 1902890 (2019)

Multibit Optoelectronic Memory in Top‐Floating‐Gated van der Waals Heterostructures

Tae Young Jeong et al., Nature Communications 10, 3825 (2019)

Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal

dichalcogenides

Shivangi Shree et al., arXiv:1907.03342 (2019)

Accessing high optical quality of MoS2 monolayers grown by chemical vapor deposition

Xudong Wang et al., Adv. Sci. 6, 1901050 (2019)

Multimechanism Synergistic Photodetectors with Ultrabroad Spectrum Response from 375 nm to 10 μm

F. Alex Cevallos et al., Crystal Growth & Design (2019)

Liquid Salt Transport Growth of Single Crystals of the Layered Dichalcogenides MoS2 and WS2

Changsik Kim et al., Nanoscale (2019)

Metallic contact induced van der Waals gap in MoS2 FET

Alvaro Rodriguez et al., Phys. Stat. Sol. RRL, 1900381 (2019)

Imaging Nanoscale Inhomogeneities and Edge Delamination in As‐Grown MoS2 Using Tip‐Enhanced

Photoluminescence

Wenjin Zhang et al., ACS Omega 4, 10322−10327 (2019)

Photostability of Monolayer Transition-Metal Dichalcogenides in Ambient Air and Acidic/Basic Aqueous Solutions

Publications



Tatiana V. Shubina et al., Ann. Phys. 531, 6, (2019)

Excitonic Emission in van der Waals Nanotubes of Transition Metal Dichalcogenides

Patrick Vaati Mwonga, thesis (2019)

Enhancing the capacity of molbdenum disulphide electrode materials using the idea of defects

MoS2 (natural)



Arramel et al., ACS Appl. Mater. Interfaces, 9 (6), pp 5566–5573 (2017)

Molecular Alignment and Electronic Structure of N, N'-Dibutyl-3,4,9,10-perylene-tetracarboxylic-diimide Molecules

on MoS 2 Surfaces

Pantelis Bampoulis et al., ACS Appl. Mater. Interfaces, 9 (22), pp 19278–19286 (2017)

Defect Dominated Charge Transport and Fermi Level Pinning in MoS2/Metal Contacts



Camille Moisan et al., arXiv:1708.02870 (2017)

Control and characterization of the preferential crystalline orientation of MoS2 2D flakes in printed layers

Jeremiah van Baren et al., 2D Materials 6, 2 (2019)

Stacking-dependent interlayer phonons in 3R and 2H MoS2

Iris Niehues et al., Nanoscale 11, 12788 (2019)

Interlayer excitons in bilayer MoS2 under uniaxial tensile strain

MoS2 (highly doped Nb)

Saptarshi Das et al., APL 106, 173506 (2015)

Nb-doped single crystalline MoS2 field effect transistor

Gioele Mirabelli et al., AIP Advances 6, 025323 (2016)

Back-gated Nb-doped MoS2 junctionless field-effect-transistors



Hyeokshin Kwon et al., Adv. Mater., 1702931 (2017)

Characterization of Edge Contact: Atomically Resolved Semiconductor–Metal Lateral Boundary in MoS2

Kohei Yamasuea and Yasuo Cho, Appl. Phys. Lett. 112, 243102 (2018)

Local carrier distribution imaging on few-layer MoS2 exfoliated on SiO2 by scanning nonlinear dielectric

microscopy

Publications



MoSe2

P. Soubelet et al., PRB 93, 155407 (2016)

Resonance effects in the Raman scattering of monolayer and few-layer MoSe2

Yohta Sata et al., APL 107, 023109 (2015)

Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface

Dahyun Nam et al., Sci. Rep. 5, 17113 (2015)

Excitation energy dependent Raman spectrum of MoSe2

Ashish Arora et al., Nanoscale 7, 20769-20775 (2015)

Exciton band structure in layered MoSe2: from a monolayer to the bulk limit

Joonhoi Koo et al., Optical Express 24 (10), 10575-10589 (2016)

Femtosecond harmonic mode-locking of a fiber laser at 3.27 GHz using a bulk-like, MoSe2-based saturable absorber

S. Caramazza et al., J. Phys.: Condens. Matter 28, 325401 (2016)

Temperature dependent EXAFS study on transition metal dichalcogenides MoX2 (X=S, Se,Te)

Tomasz Jakubczyk et al., arXiv:1606.07634 (2016)

Radiatively limited dephasing and exciton dynamics in MoSe2 monolayers

Yang Hang et al., NANO 11, 1650082 (2016)

Photo-Electrical Properties of Trilayer MoSe2 Nanoflakes

Tomasz Jakubczyk et al., Nano Lett. (2016)

Radiatively Limited Dephasing and Exciton Dynamics in MoSe2 Monolayers Revealed with Four-Wave Mixing

Microscopy

Kangwon Kim et al., ACS Nano 10, 8113-8120 (2016)

Davydov Splitting and Excitonic Resonance Effects in Raman Spectra of Few-Layer MoSe2

Joonhoi Koo et al., Lasers Congress 2016 (ASSL, LSC, LAC), OSA Technical Digest

Use of a MoSe2 Saturable Absorber for Harmonically Mode-locked Fiber Laser



spectroscopy

Yurii V. Morozov and Masaru Kuno, APL 107, 083103 (2015)

Optical constants and dynamic conductivities of single layer MoS2, MoSe2, and WSe2

S. Dufferwiel et al., Nature Communications 6, 8579 (2015)

Exciton–polaritons in van der Waals heterostructures embedded in tunable microcavities

A. Abderrahmane et al., Nanotechnology, Volume 25, Number 36 (2014)

High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors

S. Dufferwiel et al., arXiv:1612.05073 (2016)

Valley addressable exciton-polaritons in atomically thin semiconductors

Evgeny M. Alexeev et al., arXiv:1612.07969 (2016)

Imaging of interlayer coupling in van der Waals heterostructures using a bright-field optical microscope

Publications



M. R. Molas et al., 2D Materials (2017), arXiv:1612.02867 (2016)


Weigao Xu et al., Nature 541, 62–67 (2017)

Correlated fluorescence blinking in two-dimensional semiconductor heterostructures



Obafunso A. Ajayi et al., arXiv:1702.05857 (2017)

Approaching the Intrinsic Photoluminescence Linewidth in Transition Metal Dichalcogenide Monolayers

Philipp Nagler et al., arXiv:1703.00379 (2017)

Interlayer exciton dynamics in a dichalcogenide monolayer heterostructure

Guillaume Froehlicher et al., arXiv:1703.05396 (2017)

Quantifying Photoinduced Charge Transfer in Graphene-Transition Metal Dichalcogenide van der Waals

Heterostructures using Raman Spectroscopy

Chongyun Jiang et al., arXiv:1703.03133 (2017)

Microsecond dark-exciton valley polarization memory in 2D heterostructures

Obafunso Ajayi et al., 2D Mat. (2017)

Approaching the Intrinsic Photoluminescence Linewidth in Transition Metal Dichalcogenide Monolayers



oxidation



J. Wierzbowski et al., arXiv:1705.00348 (2017)

Direct exciton emission from atomically thin transition metal dichalcogenide heterostructures near the lifetime limit


Giant Zeeman splitting inducing near-unity valley polarization in van der Waals heterostructures

Philipp Nagler et al., 2D Materials, Volume 4, Number 2 (2017)


Markus Schwemmer et al., arXiv:1706.01802 (2017)

Long-lived spin polarization in n-doped MoSe2 monolayers

Pil Ju Ko et al., Semiconductor Science and Technology, Volume 32, Number 6 (2017)

High-performance near-infrared photodetector based on nano-layered MoSe2



Publications



Jinho Lee et al., Optical Materials Express Vol. 7, Issue 8, pp. 2968-2979 (2017)

All-fiberized, femtosecond laser at 1912 nm using a bulk-like MoSe2 saturable absorber


Large Proximity-Induced Spin Lifetime Anisotropy in Transition Metal Dichalcogenide/Graphene Heterostructures

Gabriella D. Shepard et al., arXiv:1709.03233 (2017)

rion Species-Resolved Quantum Beats in MoSe2

K. Lempicka et al., ACTA PHYSICA POLONICA A, Vol.132, 2, 316 (2017)

Proceedings of the 46th International School and Conference on the Physics of Semiconductors “Jaszowiec” 2017

Relative Reflection Difference as a Method for Measuring the Thickness of the Exfoliated MoSe2 Layers

Guillaume Froehlicher et al., J. Raman Spectrosc. (2017)

Rigid-layer Raman-active modes in N-layer transition metal dichalcogenides: interlayer force constants and

hyperspectral Raman imaging

Gabriella D. Shepard et al., ACS Nano, Article ASAP (2017)

Trion-Species-Resolved Quantum Beats in MoSe2

D. Kwabena Bediako et al., arXiv:1711.03465 (2017)Heterointerface effects in the electro-intercalation of van der

Waals heterostructures



Evgeny M. Alexeev et al., Nano Lett., 17 (9), pp 5342–5349 (2017)

Imaging of Interlayer Coupling in van der Waals Heterostructures Using a Bright-Field Optical Microscope

Philipp Nagler et al., Nature Communications 8, Article number: 1551 (2017)

Giant magnetic splitting inducing near-unity valley polarization in van der Waals heterostructures

S. Dufferwiel et al., Nature Photonics 11, 497–501 (2017)

Valley-addressable polaritons in atomically thin semiconductors



M. Schwemmer et al, Appl. Phys. Lett. 111, 082404 (2017)

Long-lived spin polarization in n-doped MoSe2 monolayers

Abderrahmane, Abdelkader et al., Science of Advanced Materials, Volume 10, Number 5, pp. 627-631(5)

(2018)Optoelectronic Characterizations of Two-Dimensional h-BN/MoSe2 Heterostructures Based Photodetector

Guillaume Froehlicher et al., J. Raman Spectrosc. 49, 91–99 (2018)



Chongyun Jiang et al., Nature Communications 9:753 (2018)

Microsecond dark-exciton valley polarization memory in two-dimensional heterostructures

Philipp Nagler et al., Proceedings Volume 10530, Ultrafast Phenomena and Nanophotonics XXII; 1053015 (2018)

Optical spectroscopy of interlayer excitons in TMDC heterostructures: exciton dynamics, interactions, and giant

valley-selective magnetic splitting

Der-Hsien Lien et al., Nature Communications 9, 1229 (2018)

Large-area and bright pulsed electroluminescence in monolayer semiconductors

Publications



Stefano Larentis et al., PRB 97, 201407(R) (2018)

Large effective mass and interaction-enhanced Zeeman splitting of K-valley electrons in MoSe2



Abdelkader Abderrahmane et al., Science of Advanced Materials 10, Number 5, pp. 627-631 (2018)

Optoelectronic Characterizations of Two-Dimensional h-BN/MoSe2 Heterostructures Based Photodetector

M. H. D. Guimaraes and B. Koopmans, arXiv:1806.02558 (2018)

Spin accumulation and dynamics in inversion-symmetric van der Waals crystals

Maciej Koperski et al., 2D Materials, Volume 6, Number 1 (2018), arXiv:1803.00376 (2018)

Orbital, spin and valley contributions to Zeeman splitting of excitonic resonances in MoSe2, WSe2 and WS2

Monolayers

Christopher Rogers et al., arXiv:1804.07880 (2018)

Laser Annealing for Radiatively Broadened MoSe2 grown by Chemical Vapor Deposition

S. Anghel et al., 2D Materials (2018)

Coupled exciton-trion spin dynamics in a MoSe2 monolayer

D. Kwabena Bediako et al., Nature 558, 425–429 (2018)

Heterointerface effects in the electrointercalation of van der Waals heterostructures

Wenjie Deng et al., J. Mater. Chem. C, 2019, Advance Article (2018)

Field enhanced in-plane homostructure in a pure MoSe2 phototransistor for the efficient separation of photo-excited

carriers

T. Smoleński et al., arXiv:1812.08772 (2018)

Shubnikov-de Haas oscillations in optical conductivity of monolayer MoSe2

Woosuk Choi et al., ACS Appl. Mater. Interfaces (2018)

Twist-Angle-Dependent Optoelectronics in a Few-Layer Transition-Metal Dichalcogenide Heterostructure

Hossein Taghinejad et al., ACS Nano 12 (12), pp 12795–12804 (2018)

Defect-Mediated Alloying of Monolayer Transition-Metal Dichalcogenides

Wenjie Deng et al., J. Mater. Chem. C, Advance Article (2019)

Field enhanced in-plane homostructure in a pure MoSe2 phototransistor for the efficient separation of photo-excited

carriers

Christopher Rogers et al., arXiv:1902.05036 (2019)

Coherent Control of Two-Dimensional Excitons

H. H. Fang et al., arXiv:1902.00670 (2019)

Control of the Exciton Radiative Lifetime in van der Waals Heterostructures

Fabien Vialla et al., 2D Materials (2019)

Tuning of impurity-bound interlayer complexes in a van der Waals heterobilayer

Manuel R. Uhlig et al., Nature Communications 10, 2606 (2019)

Atomic-scale mapping of hydrophobic layers on graphene and few-layer MoS2 and WSe2 in water

V. Kravtsov et al., arXiv:1905.13505 (2019)

Control of polariton linewidth in a monolayer semiconductor by employing optical bound states in the continuum

Publications



Nature Photonics 13, 131–136 (2019) Polarization switching and electrical control of interlayer excitons in two-

dimensional van der Waals heterostructures

Korbinian Pürckhauer et al., ACS Appl. Nano Mater. 2, 2593−2598 (2019)

Analysis of Airborne Contamination on Transition Metal Dichalcogenides with Atomic Force Microscopy Revealing

That Sulfur Is the Preferred Chalcogen Atom for Devices Made in Ambient Conditions

Christopher M. Smyth et al., J. Phys. Chem. C (2019)

Origins of Fermi Level Pinning between Molybdenum Dichalcogenides (MoSe2, MoTe2) and Bulk Metal Contacts:

Interface Chemistry and Band Alignment

Manfred Ersfeld et al., Nano Lett. 19, 6, 4083-4090 (2019)

Spin States Protected from Intrinsic Electron–Phonon Coupling Reaching 100 ns Lifetime at Room Temperature in

MoSe2



dichalcogenides

MoTe2, 1T’ phase

Anamul Md. Hoque et al., arXiv:1908.09367 (2019)

All-electrical creation and control of giant spin-galvanic effect in 1T-MoTe2/graphene heterostructures at room

temperature

Gregory M. Stiehl et al., arXiv:1906.01068 (2019)

Layer-dependent spin-orbit torques generated by the centrosymmetric transition metal dichalcogenide β-MoTe2

Dante Zakhidov et al., arXiv:1905.12746 (2019)

Reversible Electrochemical Phase Change in Monolayer to Bulk MoTe2 by Ionic Liquid Gating

Wenhui Hou et al., Nature Nanotechnology 14, 668–673 (2019)

Strain-based room-temperature non-volatile MoTe2 ferroelectric phase change transistor

MoTe2, 2H phase (alpha phase)

Atiye Pezeshki, Advanced Materials (2016)

Electric and Photovoltaic Behavior of a Few-Layer alpha-MoTe2/MoS2 Dichalcogenide Heterojunction

MGrzeszczyk et al., 2D Materials 3 (2), 025010 (2016)

Raman scattering of few-layers MoTe2

Jiong Yang et al., ACS Nano 9 (6), 6603-6609 (2015)

Robust Excitons and Trions in Monolayer MoTe2

June Park et al., APL 107, 153106 (2015)

Temperature dependent Raman spectroscopic study of mono-, bi-, and tri-layer molybdenum ditelluride

Atiye Pezeshki et al., ACS Nano 10 (1), 1118-1125 (2015)

Static and Dynamic Performance of Complementary Inverters Based on Nanosheet alpha-MoTe2 p-Channel and

MoS2 n-Channel Transistors

S. Caramazza et al., J. Phys.: Condens. Matter 28, 325401 (2016)

Publications



Temperature dependent EXAFS study on transition metal dichalcogenides MoX2 (X=S, Se,Te)

Feng Wang et al., Adv. Func. Mat. (2016)

Configuration-Dependent Electrically Tunable Van der Waals Heterostructures Based on MoTe2/MoS2

Zhenxing Wang et al., Nanoscale 8, 13245-13250 (2016)

Electrostatically tunable lateral MoTe2 p–n junction for use in high-performance optoelectronics

Tobias J. Octon et al., Adv. Opt. Mat. 2016

Fast High-Responsivity Few-Layer MoTe2 Photodetectors

K. Gołasa et al., arXiv:1608.04087 (2016)

Resonant quenching of Raman scattering due to out-of-plane A1g/A'1 modes in few-layer MoTe2

Hai Huang, RSC Adv. 6, 87416-87421 (2016)

Ferroelectric polymer tuned two dimensional layered MoTe2 photodetector

Hai Huang et al., Nanotechnology 44 (27) (2016)

Highly sensitive visible to infrared MoTe2 photodetectors enhanced by the photogating effect

Katarzyna Gołasa et al., MRS Advances (2017)

Anomalous Raman Scattering In Few Monolayer MoTe2

Katarzyna Gołasa et al., Nanophotonics, 20160150 (2017)

Resonant quenching of Raman scattering due to out-of-plane A1g/A′1 modes in few-layer MoTe2



Iddo Amit et al., Adv. Mater. (2017)

Role of Charge Traps in the Performance of Atomically Thin Transistors

Wenzhi Yu et al., Small 1700268 (2017)

Near-Infrared Photodetectors Based on MoTe2/Graphene Heterostructure with High Responsivity and Flexibility



Han Sol Lee et al., ACS Appl. Mater. Interfaces, 9 (18), pp 15592–15598 (2017)

Coupling Two-Dimensional MoTe2 and InGaZnO Thin-Film Materials for Hybrid PN Junction and CMOS Inverters

Stefano Larentis et al., ACS Nano, Article ASAP (2017)

Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits



Hanlin Fang et al., arXiv:1710.01591 (2017)

1305 nm MoTe2-on-silicon Laser

Changsik Kim et al., ACS Nano, 11 (2), pp 1588–1596 (2017)

Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides

Guillaume Froehlicher et al., J. Raman Spectrosc. (2017), arXiv:1708.01668 (2017)



Publications





Hui Zhu et al., ACS Nano, Article ASAP (2017)

Defects and Surface Structural Stability of MoTe2 Under Vacuum Annealing

Ya-Qing Bie et al., Nature Nanotechnology volume 12, pages 1124–1129 (2017)

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

Simone Caramazza et al., Eur. Phys. J. B 91: 35 (2018)

First- and second-order Raman scattering from MoTe2 single crystal

Chun-Liang Lin et al., Journal of Physics: Condensed Matter, Volume 30, Number 10 (2018)

Quasiparticle scattering in type-II Weyl semimetal MoTe2

Yan Chen et al., Small 14, 1703293 (2018)

High-Performance Photovoltaic Detector Based on MoTe2/MoS2 Van der Waals Heterostructure

Chen Pan et al., Adv. Electron. Mater. 4, 1700662 (2018), arXiv:1801.01742 (2018)

Analog Circuit Applications Based on Ambipolar Graphene/MoTe2 Vertical Transistors

Hanlin Fang et al., Laser Photonics Rev. 12, 1800015 (2018)

1305 nm Few‐Layer MoTe2‐on‐Silicon Laser‐Like Emission

Yu Song et al., arXiv:1805.09489 (2018)

Second harmonic generation in atomically thin MoTe2

Mengjian Zhu et al., APL 112, 183102 (2018)

Engineering few-layer MoTe2 devices by Co/hBN tunnel contacts

Hongji Li et al., J. Korean Phys. Soc. 73: 278 (2018)

Infrared Semiconducting Transition-Metal Dichalcogenide Lasing with a Silicon Nanocavity

Wenjie Chen et al., Appl. Phys. Lett. 113, 152102 (2018)

Precisely controllable n-type doping in MoTe2 field effect transistors by hydrazine treatment

Yuan Tan et al., Nanoscale (2018)

Controllable 2H-to-1T′ phase transition in few-layer MoTe2

Nicola J Townsend et al., 2D Materials 5, 2, (2018)

Sub 20 meV Schottky barriers in metal/MoTe2 junctions

Iman Shackery et al., Journal of Materials Chemistry C (2018)

Few-layered α-MoTe2 Schottky junction for a high sensitivity chemical-vapour sensor

Takao Yamaoka et al., Advanced Functional Materials 28, 35 (2018)

Efficient Photocarrier Transfer and Effective Photoluminescence Enhancement in Type I Monolayer MoTe2/WSe2

Heterostructure

Yan Chen et al., Small 14 (9), 1703293 (2018)

High‐Performance Photovoltaic Detector Based on MoTe2/MoS2 Van der Waals Heterostructure

V. Karthik Nagareddy et al., Adv. Funct. Mater. 28, 1804434 (2018)

Humidity‐Controlled Ultralow Power Layer‐by‐Layer Thinning, Nanopatterning and Bandgap Engineering of MoTe2

M. Grzeszczyk et al., Scientific Reports 8, 17745 (2018), arXiv:1808.02554 (2018)

Raman scattering from the bulk inactive out–of–plane B12g mode in few–layer MoTe2

Publications



Lei Yin et al., Adv. Func. Mat. (2018)

Van der Waals Heterostructure Devices with Dynamically Controlled Conduction Polarity and Multifunctionality

Xia Wei et al., arXiv:1903.08833 (2019)

Enhanced photoresponse in MoTe2 photodetectors with asymmetric graphene contacts

Xiao-Miao Zhao et al., Phys. Rev. B 99, 024111 (2019)

Pressure effect on the electronic, structural, and vibrational properties of layered 2H−MoTe2

Yongjae Cho et al., Nano Lett., Article ASAP (2019)

Impact of Organic Molecule-Induced Charge Transfer on Operating Voltage Control of Both n-MoS2 and p-MoTe2

Transistors

Lingling Wu et al., ACSNano, 13, 2341−2348 (2019)

Ultrafast Energy Transfer of Both Bright andDark Excitons in 2D van der WaalsHeterostructures Beyond Dipolar

Coupling

Xia Wei et al., Adv. Optical Mater. 7, 1900190 (2019)

Enhanced Photoresponse in MoTe2 Photodetectors with Asymmetric Graphene Contacts

Dante Zakhidov et al., arXiv:1905.12746 (2019)

Reversible Electrochemical Phase Change in Monolayer to Bulk MoTe2 by Ionic Liquid Gating

Dianyu Qi et al., ACS Nano 13, 8, 9464-9472 (2019)

Continuously Tuning Electronic Properties of Few-Layer Molybdenum Ditelluride with in Situ Aluminum

Modification toward Ultrahigh Gain Complementary Inverters

Pedro Soubelet et al., Nanoscale 21 (2019)

The lifetime of interlayer breathing modes of few-layer 2H-MoSe2 membranes

Yu-Shu Lin et al., Appl. Surf. Sc. 492, 239-244 (2019)

Nucleation engineering for atomic layer deposition of uniform sub-10 nm high-K dielectrics on MoTe2

Junjun Wang et al., Adv. Sci. 6, 1801841 (2019)

Controlling Injection Barriers for Ambipolar 2D Semiconductors via Quasi-van der Waals Contacts

Han Sol Lee et al., Adv. Opt. Mater. 1900768 (2019)

Seamless MoTe2 Homojunction PIN Diode toward 1300 nm Short‐Wave Infrared Detection

Man Luo et al., Optical and Quantum Electronics 51:127 (2019)

Gate-tunable ReS2/MoTe2 heterojunction with high-performance photodetection

Seung Gi Seo and Sung Hun Jin, Phys. Stat. Sol. RRL 1900317 (2019)

Photosensitive Complementary Inverters Based on n‐Channel MoS2 and p‐Channel MoTe2 Transistors for

Light‐to‐Frequency Conversion Circuits

MoWS2

Hong Gu et al., Results in Physics 7, 4394-4397 (2017)

High temperature study on the thermal properties of few-layer Mo0.5W0.5S2 and effects of capping layers

MoWSe2

Publications





Pantelis Bampoulis et al., ACS Appl. Mater. Interfaces 10 (15), pp 13218–13225 (2018)

Local Conduction in MoxW1–xSe2: The Role of Stacking Faults, Defects, and Alloying

NbS2

Hunyoung Bark et al., Journal of Physics D: Applied Physics, Volume 49, Number 48 (2016)

Bias-assisted atomic force microscope nanolithography on NbS2 thin films grown by chemical vapor deposition

NbS2-2H

Rusen Yan et al., Applied Physics Express, Volume 12, Number 2 (2019), arXiv:1803.06097 (2018)

Thickness dependence of superconductivity in ultrathin NbS2

NbS2-3R

Naveed Mehmood et al., arXiv:1712.07366 (2017)

Photocurrent Generation in a Metallic Transition Metal Dichalcogenide

NbSe2

Naoto Yabuki et al., Nature Communications 7, 10616 (2016)

Supercurrent in van der Waals Josephson junction

Y. Cao et al., Nano Lett. 15 (8), 4914-4921 (2015)

Quality Heterostructures from Two-Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere

Shawulienu Kezilebieke et al., arXiv:1701.03288 (2017)

Coupled Yu-Shiba-Rusinov states in molecular dimers on NbSe2

Yohta Sata et al., JJAP Volume 56, Number 4S (2017), arXiv:1702.02322 (2017)

N- and p-type carrier injections into WSe2 with van der Waals contacts of two-dimensional materials

Marcos H. D. Guimarães et al., Nano Lett., 18 (2), pp 1311–1316 (2018)

Spin–Orbit Torques in NbSe2/Permalloy Bilayers

Sergio C. de la Barrera et al., Nature Communications 9, 1427 (2018)

Tuning Ising superconductivity with layer and spin–orbit coupling in two-dimensional transition-metal

dichalcogenides

Shawulienu Kezilebieke et al., arXiv:1811.11591 (2018)

Interplay between Yu-Shiba-Rusinov states and spin-flip excitations on magnetic impurities on superconducting

NbSe2 substrate

Gavin J. Orchin et al., arXiv:1903.02528 (2019)

Niobium diselenide superconducting photodetectors

Nicola Paradiso et al., 2D Materials 6, 2 (2019) , arXiv:1811.06207 (2018)


Publications



Johannes Holler et al., arXiv:1907.12265 (2019)

Air tightness of hBN encapsulation and its impact on Raman spectroscopy of van der Waals materials

G. J. Orchin et al., Appl. Phys. Lett. 114, 251103 (2019)

Niobium diselenide superconducting photodetectors

Shawulienu Kezilebieke et al., Nano Lett. 19, 7, 4614-4619 (2019)

Observation of Coexistence of Yu-Shiba-Rusinov States and Spin-Flip Excitations

P/As alloy

Matin Amani et al., ACS Nano, Article ASAP (2017)

Mid-Wave Infrared Photoconductors Based on Black Phosphorus-Arsenic Alloys

PtSe2

Zhaoguo Li et al., Journal of Physics: Condensed Matter, Volume 29, Number 23 (2017)

Anomalous magnetotransport behaviours in PtSe2 microflakes

Alberto Ciarrocchi et al., Nature Communications 9 (2018)

Thickness-modulated metal-to-semiconductor transformation in a transition metal dichalcogenide

Zhaoguo Li et al., Nanotechnology 29, 40 (2018)

Suppression of magnetoresistance in PtSe2 microflakes with antidot arrays

Zhaoguo Li et al., Phys. Rev. B 98, 165441 (2018)

Observation of negative longitudinal magnetoresistance in the type-II Dirac semimetal PtSe2

Bin Huang et al., Optics Express Vol. 27, Issue 3, pp. 2604-2611 (2019)

Bulk-structured PtSe2 for femtosecond fiber laser mode-locking

Ahmet Avsar et al., Nature Nanotechnology 14, 674–678 (2019)

Defect induced, layer-modulated magnetism in ultrathin metallic PtSe2

ReS2

Ozgur Burak Aslan et al., ACS Photonics, 2016, 3 (1), pp 96–101

Linearly Polarized Excitons in Single- and Few-Layer ReS2 Crystals

Daniel A. Chenet et al., Nanolett. 15 (9), 5667-5672 (2015)

In-Plane Anisotropy in Mono- and Few-Layer ReS2 Probed by Raman Spectroscopy and Scanning Transmission

Electron Microscopy

Sangwan Sim et al., Nat. Comm. 7:13569 (2016)

Selectively tunable optical Stark effect of anisotropic excitons in atomically thin ReS2

Mathias Gehlmann et al., arXiv:1702.04176 (2017)

Direct observation of the band gap transition in atomically thin ReS2

Jing Xu et al., Science Adv. Vol 3, No. 5, e160224 (2017)

A two-dimensional semiconductor transistor with boosted gate control and sensing ability

Hyejin Jang et al., Adv. Mater. 1700650 (2017)

Publications



3D Anisotropic Thermal Conductivity of Exfoliated Rhenium Disulfide






Mathias Gehlmann et al., Nano Lett. 17 (9), pp 5187–5192 (2017)

Direct Observation of the Band Gap Transition in Atomically Thin ReS2

Xiang Xu et al., Opt Quant Electron 50: 39 (2018)

Passive Q-switching based on ReS2 saturable absorber in Er-doped fiber laser at 1532 nm

Wugang Liao et al., ACS Appl. Mater. Interfaces 10, 7248−7255 (2018)

Low-Frequency Noise in Layered ReS2 Field Effect Transistors on HfO2 and Its Application for pH Sensing

Nur Baizura Mohamed et al., APL 113, 121112 (2018)

Photoluminescence quantum yields for atomically thin-layered ReS2: Identification of indirect-bandgap

semiconductors

Seong Jun Jung et al., Current Applied Physics (2018)

Atomic-registry-dependent electronic structures of sulfur vacancies in ReS2 studied by scanning tunneling

microscopy/spectroscopy

Joanna Urban et al., 2D Materials (2018)

Non equilibrium anisotropic excitons in atomically thin ReS2

Yanmin Liu et al., ACS Nano 12 (8), pp 7638–7646 (2018)

Interlayer Friction and Superlubricity in Single-Crystalline Contact Enabled by Two-Dimensional Flake-Wrapped

Atomic Force Microscope Tips

Kartikey Thakar et al., ACS Appl. Mater. Interfaces 10 (42), pp 36512–36522 (2018)

Multilayer ReS2 Photodetectors with Gate Tunability for High Responsivity and High-Speed Applications

Ava Khosravi et al., Materials 12(7), 1056 (2019)

High-k Dielectric on ReS2 In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3



Man Luo et al., Optical and Quantum Electronics 51:127 (2019)

Gate-tunable ReS2/MoTe2 heterojunction with high-performance photodetection



Bablu Mukherjee et al., ACS Photonics 6, 9, 2277-2286 (2019)

Enhanced Quantum Efficiency in Vertical Mixed-Thickness n-ReS2/p-Si Heterojunction Photodiodes

ReSe2

Chris M. Corbet et al., APL 108, 162104 (2016)

Improved contact resistance in ReSe2 thin film field-effect transistors

Publications



Guillaume Froehlicher et al., J. Raman Spectrosc. (2017) , arXiv:1708.01668 (2017)





Lewis S. Hart et al., Scientific Reports 7, 5145 (2017), arXiv:1704.00175 (2017)

Electronic bandstructure and van der Waals coupling of ReSe2 revealed by high-resolution angle-resolved

photoemission spectroscopy

Lewis S. Hart et al., npj 2D Materials and Applications 1, 41 (2017)

Identifying light impurities in transition metal dichalcogenides: the local vibrational modes of S and O in ReSe2 and

MoSe2

Yongping Yao et al., Optics Letters 44, 11, pp. 2839-2842 (2019)

Highly efficient continuous-wave and ReSe2 Q-switched ∼3 μm dual-wavelength Er:YAP crystal lasers

Yongping Yao et al., RSC Adv., 9, 14417–14421 (2019)

The energy band structure analysis and 2 μm Q-switched laser application of layered rhenium diselenide

Jinho Lee et al., Photonics Research Vol. 7, Issue 9, pp. 984-993 (2019)

Investigation of nonlinear optical properties of rhenium diselenide and its application as a femtosecond mode-locker

SnS2

Tharith Sriv et al., Scientific Reports 8, 10194 (2018)Low-Frequency Raman Spectroscopy of Few-Layer

2H-SnS2

Prashant Bhaskar et al., J. Phys. Chem. C 123, 18 (2019)

Unconventional Thermally Activated Indirect to Direct Radiative Recombination of Electrons and Holes in

Tin Disulfide Two-Dimensional van der Waals Material

Hikari Kitadai et al., J. Phys. Chem. Lett. 10, 11 (2019)

Enhanced Raman Scattering on Nine 2D van der Waals Materials

Prashant Bhaskar, thesis (2019)

Mobility and Recombination Dynamics of Charges in Low-Dimensional Van Der Waals Materials

SnSe2



TaS2 (1T phase)

Daniel R. Cremons et al., Structural Dynamics 4, 044019 (2017)

Defect-mediated phonon dynamics in TaS2 and WSe2

Yanmin Liu et al., ACS Nano 12 (8), pp 7638–7646 (2018)

Publications



Interlayer Friction and Superlubricity in Single-Crystalline Contact Enabled by Two-Dimensional Flake-Wrapped

Atomic Force Microscope Tips

I. Lutsyk et al., Phys. Rev. B 98, 195425 (2018)

Electronic structure of commensurate, nearly commensurate, and incommensurate phases of 1T−TaS2 by angle-

resolved photoelectron spectroscopy, scanning tunneling spectroscopy, and density functional theory

Wen Wang et al., Scientific Reports 9, 7066 (2019)

Lattice Discontinuities of 1T-TaS2 across First Order Charge Density Wave Phase Transitions

TaS2 (2H phase)

M. Abdel-Hafiez et al., Scientific Reports 6, 31824 (2016)

Enhancement of superconductivity under pressure and the magnetic phase diagram of tantalum disulfide single

crystals

Sergio C. de la Barrera et al., Nature Communications 9, 1427 (2018)

Tuning Ising superconductivity with layer and spin–orbit coupling in two-dimensional transition-metal

dichalcogenides

TaTe2

Gregory M. Stiehl et al., ACS Nano, Article ASAP (2019)

Current-Induced Torques with Dresselhaus Symmetry Due to Resistance Anisotropy in 2D Materials

TiS2

Dhavala Suri et al., J. Phys.: Condens. Matter in press (2017)

A study of electron and thermal transport in layered Titanium Disulphide single crystals

A. Dużyńska et al., J Raman Spectrosc. 50, 1114–1119 (2019)

Temperature‐induced phonon behavior in titanium disulfide (TiS2) nanosheets



TiSe2



Edbert J. Sie et al., Nature Communications 10, 3535 (2019)

Time-resolved XUV ARPES with tunable 24–33 eV laser pulses at 30 meV resolution

TiTe2

P. . Chen et al., Nat Commun. 8: 516 (2017)

Emergence of charge density waves and a pseudogap in single-layer TiTe2



Publications



VSe2

T. Gamze Ulusoy Ghobadi et al., ACS Omega, 2 (11), pp 8319–8329 (2017)

Catalytic Properties of Vanadium Diselenide: A Comprehensive Study on Its Electrocatalytic Performance in

Alkaline, Neutral, and Acidic Media

WS2



Woojin Park et al., Adv. Elec. Mat. 2 (2), (2016)

Complementary Unipolar WS2 Field-Effect Transistors Using Fermi-Level Depinning Layers

Matthias Staiger et al., PRB 91, 195419 (2015)

Splitting of monolayer out-of-plane A1' Raman mode in few-layer WS2

Hafiz M. W. Khalil et al., ACS Appl. Mater. Interfaces 7 (42), 23589–23596 (2015)

Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact

Resistance

I. Paradisanos et al., arXiv:1603.07923 (2016)

Spatial Non-Uniformity in Exfoliated WS2 Single layers

S. Wang et al., arXiv:1604.06656 (2016)

Coherent Coupling of WS_2 Monolayers with Metallic Photonic Nanostructures at Room Temperature

Bo Liu et al., Adv. Mater. (2016)

Engineering Bandgaps of Monolayer MoS2 and WS2 on Fluoropolymer Substrates by Electrostatically Tuned Many-

Body Effects

Deep Jariwala et al., Nano Lett. Article ASAP (2016)

Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics

Shaojun Wang et al., Nano Lett. 16 (7), pp 4368–4374 (2016)

Coherent Coupling of WS2 Monolayers with Metallic Photonic Nanostructures at Room Temperature

Takashi Ikuno and Masaki Hasegawa, Applied Physics Express, Vol. 9, Number 6 (2016)

Wavelength-dependent switching of photocurrent polarity in a semiconductor film with bifacial band bendings

S. Omar and B.J. van Wees, arXiv:1610.07196 (2016)

Graphene-WS2 heterostructures for tunable spin injection and spin transport

Xin He et al., Applied Physics Letters 109, 173105 (2016)

Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure

Carmen Palacios-Berraquero et al., arXiv:1603.08795 (2016)

Atomically thin quantum light emitting diodes


Publications




spectroscopy

Gerd Plechinger et al., Nat.Commun. 2016; 7: 12715

Trion fine structure and coupled spin–valley dynamics in monolayer tungsten disulfide

Fang Wang et al., 2D Materials, Volume 4, Number 1 (2016)

Strain-induced phonon shifts in tungsten disulfide nanoplatelets and nanotubes

Gerd Plechingeret al., Nanolett. (2016)

Excitonic valley effects in monolayer WS2 under high magnetic fields

M. R. Molas et al., arXiv:1612.02867 (2016)






M. R. Molas et al., 2D Materials (2017)




Maciej R. Molas et al., arXiv:1703.09175 (2017)

Raman scattering excitation spectroscopy in monolayer WS2


Intrinsic air stability mechanisms of two-dimensional transition metal dichalcogenide surfaces: basal versus

edge oxidation



Jorge Cuadra et al., arXiv:1703.07873 (2017)

Observation of tunable charged exciton polaritons in hybrid monolayer WS2 - plasmonic nanoantenna

system

Jinho Yang et al., arXiv:1706.01677 (2017)

Excitation energy dependence of Raman spectra of few-layer WS2


Rigid-layer Raman-active modes in N-layer Transition Metal Dichalcogenides: interlayer force constants

and hyperspectral Raman imaging

Xiaoze Liu et al., PRL 119, 027403 (2017)

Control of Coherently Coupled Exciton Polaritons in Monolayer Tungsten Disulphide

Maciej Roman Molas et al., Nanoscale (2017), arXiv:1706.09285 (2017)

Optical response of monolayer, few-layer and bulk tungsten disulfide

Gerd Plechinger et al., arXiv:1705.10988 (2017)

Publications



Valley Dynamics of Excitons in Monolayer Dichalcogenides



Longhui Zhang et al., Phys. Rev. B 96, 155202 (2017)

Terahertz surface emission of d-band electrons from a layered tungsten disulfide crystal by the surface field

T. Jakubczyk et al., arXiv:1709.02658 (2017)

Impact of environment on dynamics of exciton complexes in a WS2 monolayer

Peida Zhao et al., Nano Lett., 17 (9), pp 5356–5360 (2017)

Measuring the Edge Recombination Velocity of Monolayer Semiconductors






Yu Liu et al., Applied Optics 56, 4 (2017) Modification of degenerative photoluminescence in aged

monolayer WS2 by PC61BM surface processing


Long radiative lifetimes of excitons in monolayer transition-metal dichalcogenides MX 2 (M= Mo, W; X=

S, Se)

Maciej R. Molas et al., Scientific Reports 7, 5036 (2017)

Raman scattering excitation spectroscopy of monolayer WS2

Yun Ji Kim et al., Journal of the Electronic Devices Society 6 (2018)

Contact Resistance Reduction of WS2 FETs Using High-Pressure Hydrogen Annealing

Jinho Yang et al., FlatChem 3, 64-70 (2017)

Excitation energy dependence of Raman spectra of few-layer WS2

Gerd Plechinger et al., PSS 11, 7, 1700131 (2017)

Valley dynamics of excitons in monolayer dichalcogenides


Zeeman Splitting and Inverted Polarization of Biexciton Emission in Monolayer WS2

Vishwas Jindal et al., Phys. Rev. B 97, 045211 (2018)

Anomalous behavior of the excited state of the A exciton in bulk WS2




S. Omar et al., Phys. Rev. B 97, 045414 (2018)

Spin transport in high-mobility graphene on WS2 substrate with electric-field tunable proximity spin-orbit

interaction

Publications



D. Vaclavkova et al., arXiv:1802.05538 (2018)


Der-Hsien Lien et al., Nature Communications 9, 1229 (2018)

Large-area and bright pulsed electroluminescence in monolayer semiconductors

Yongjae Kwon et al., Current Applied Physics 18, 8, 941-945 (2018)

Variation of photoluminescence spectral line shape of monolayer WS2

Maciej Koperski et al., 2D Materials, Volume 6, Number 1 (2018), arXiv:1803.00376 (2018)

Orbital, spin and valley contributions to Zeeman splitting of excitonic resonances in MoSe2, WSe2 and

WS2 Monolayers

Yun Ji Kim et al., IEEE Journal of the Electron Devices Society, Volume: 6 (2018)

Contact Resistance Reduction of WS2FETs Using High-Pressure Hydrogen Annealing

Tomasz Jakubczyk et al., 2D Materials 5, 3, (2018)

Impact of environment on dynamics of exciton complexes in a WS2 monolayer

Z. Wang et al., arXiv:1805.06259 (2018)

Direct observation of intravalley spin relaxation in single-layer WS2

D. Vaclavkova et al., Nanotechnology 29, 32 (2018)


Jorge Cuadra et al., Nano Lett. 18 (3), pp 1777–1785 (2018)

Observation of Tunable Charged Exciton Polaritons in Hybrid Monolayer WS2−Plasmonic Nanoantenna

System

Ankit Bisht et al., arXiv:1806.07784 (2018)

Universal method for realization of strong light-matter coupling in hierarchical microcavity-plasmon-

exciton systems

Shaojun Wang et al., arXiv:1808.08388 (2018)

Screened Strong Coupling of Excitons in Multilayer WS2 with Collective Plasmonic Resonances

Zilong Wang et al., Nano Lett., Article ASAP (2018)

Intravalley Spin–Flip Relaxation Dynamics in Single-Layer WS2

Mathias Geisler et al., arXiv:1812.09495 (2018)

Single-crystalline gold nanodisks on WS2 mono- and multilayers: Strong coupling at room temperature

Krystian Nowakowski et al., Nano Lett. (2018)

Barrier Inhomogeneities in Atomic Contacts on WS2

Ankit Bisht et al., Nano Lett. (2018)

Collective Strong Light-Matter Coupling in Hierarchical Microcavity-Plasmon-Exciton Systems

Cora M. Went et al., arXiv:1903.08191 (2019)

Transferred metal contacts for vertical Schottky-junction transition metal dichalcogenide photovoltaics

Publications





Hannah M. Gramling et al., ACS Appl. Electron. Mater. 1, 407−416 (2019)

Spatially Precise Transfer of Patterned Monolayer WS2 and MoS2 with Features Larger than 10^4

micron^2 Directly from Multilayer Sources

Shaojun Wang et al., ACS Photonics 6, 286−293 (2019)

Limits to Strong Coupling of Excitons in Multilayer WS2 with Collective Plasmonic Resonances

Krystian Nowakowski et al., Nano Lett., 19 (2), pp 1190–1196 (2019)

Barrier Inhomogeneities in Atomic Contacts on WS2





Cora M. Went et al., arXiv:1903.08191 (2019)

A new metal transfer process for van der Waals contacts to vertical Schottky-junction transition metal

dichalcogenide photovoltaics

Jie Gu et al., arXiv:1905.12227 (2019)

A Room Temperature Polariton Light-Emitting Diode Based on Monolayer WS2

Matthias Paur et al., Nature Communications 10, 1709 (2019)

Electroluminescence from multi-particle exciton complexes in transition metal dichalcogenide

semiconductors

Ruggero Verre et al., Nature Nanotechnology 14, 679–683 (2019)

Transition metal dichalcogenide nanodisks as high-index dielectric Mie nanoresonators

Qixing Wang et al., Nano Lett. 19, 8, 5595-5603 (2019)

High-Energy Gain Upconversion in Monolayer Tungsten Disulfide Photodetectors

Miao-Ling Lin et al., Nature Communications 10, 2419 (2019)

Cross-dimensional electron-phonon coupling in van der Waals heterostructures


Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer

transition metal dichalcogenides

Torsten Stiehm et al., Review of Scientific Instruments 90, 083102 (2019)

Supercontinuum second harmonic generation spectroscopy of atomically thin semiconductors

Mathias Geisler et al., ACS Photonics 6, 4, 994-1001 (2019)

Single-Crystalline Gold Nanodisks on WS2 Mono- and Multilayers for Strong Coupling at Room

Temperature

Talieh S. Ghiasi et al., Nano Lett. 19, 9, 5959–5966 (2019)

Publications



Charge-to-Spin Conversion by the Rashba–Edelstein Effect in Two-Dimensional van der Waals

Heterostructures up to Room Temperature

Simone Eizagirre Barker et al., Adv.Optical Mater. 7, 1900351 (2019)

Preserving the Emission Lifetime and Efficiency of a Monolayer Semiconductor upon Transfer

Fang Liu and Xiaoyang Zhu, arXiv:1909.07759 (2019)

Direct determination of momentum resolved electron transfer in the photo-excited MoS2/WS2 van der

Waals heterobilayer by TR-ARPES


Charge-to-Spin Conversion by the Rashba-Edelstein Effect in 2D van der Waals Heterostructures up to

Room Temperature

WSe2

Angada B. Sachid et al., Advanced Materials 28, 2547-2554 (2016)

Monolithic 3D CMOS Using Layered Semiconductors

Kevin Chen et al., APL Mater. 2, 092504 (2014)

Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density



Hema C.P. Movva et al., ACS Nano 9 (10), 10402–10410 (2015)

High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors

Deep Jariwala et al., Nano Lett. Article ASAP (2016), arXiv:1605.04057 (2016)

Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics

Zhen Li et al., ACS Nano (2016)

Layer Control of WSe2 via Selective Surface Layer Oxidation

Roman Bertoni et al., arXiv:1606.03218 (2016)

Generation and evolution of spin-, valley- and layer-polarized excited carriers in inversion-symmetric WSe2

Giovanni V. Resta et al., Sci Rep. 6, 29448 (2016)

Polarity control in WSe2 double-gate transistors

Sung Ju Hong et al., AIP Advances 6, 085320 (2016)

Fabrication and independent control of patterned polymer gate for a few-layer WSe2 field-effect transistor

Rafik Addou and Robert M. Wallace, ACS appl. mater. inerfaces Just Accepted (2016)

Surface Analysis of WSe2 Crystals: Spatial and Electronic Variability

Arancha I. Dago et al., APL 109, 163103 (2016)

Sub-20 nm patterning of thin layer WSe2 by scanning probe lithography

Carmen Palacios-Berraquero et al., arXiv:1603.08795 (2016)

Atomically thin quantum light emitting diodes

Babak Fallahazad et al., Phys. Rev. Lett. 116, 086601 (2016)

Shubnikov–de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer WSe2: Landau Level Degeneracy,

Effective Mass, and Negative Compressibility

Publications





spectroscopy

Yurii V. Morozov and Masaru Kuno, APL 107, 083103 (2015)

Optical constants and dynamic conductivities of single layer MoS2, MoSe2, and WSe2

Jun Young Kim et al., Optics Express Vol. 24, Issue 24, pp. 27546-27553 (2016)

Surface-enhanced Raman scattering for 2-D WSe2 hybridized with functionalized gold nanoparticles

M. R. Molas et al., arXiv:1612.02867 (2016)


Qirong Yao et al., APL 109, 243105 (2016)

Growth of silicon on tungsten diselenide



Florian Ruckerl et al., Phys. Status Solidi B, 1–5 (2016)

Surface functionalization of WSe2 by F16CoPc



M. R. Molas et al., 2D Materials (2017)




Bo Lei et al., Nano Res. (2017)

Significantly enhanced optoelectronic performance of tungsten diselenide phototransistor via surface functionalization

Nur BaizuraMohamed et al., Phys. Status Solidi B, 1600563 (2017)

Evaluation of photoluminescence quantum yield of monolayer WSe2 using reference dye of 3-borylbithiophene

derivative

J. Binder et al., arXiv:1702.08333 (2017)

Sub-bandgap voltage electroluminescence and magneto-oscillations in a WSe2 light-emitting van der Waals

heterostructure



Archana Raja et al., arXiv:1702.01204 (2017)

Coulomb engineering of the bandgap in 2D semiconductors

Lutz Waldecker et al., arXiv:1703.03496 (2017)

A Momentum-Resolved View on Electron-Phonon Coupling in Multilayer WSe2


Valley-Polarized Exciton Dynamics in Exfoliated Monolayer WSe2

Chongyun Jiang et al., arXiv:1703.03133 (2017)

Microsecond dark-exciton valley polarization memory in 2D heterostructures

Publications



Yohta Sata et al., JJAP Volume 56, Number 4S (2017), arXiv:1702.02322 (2017)

N- and p-type carrier injections into WSe2 with van der Waals contacts of two-dimensional materials



oxidation



Christopher M Smyth et al., 2D Mat., Volume 4, Number 2 (2017)

WSe2-contact metal interface chemistry and band alignment under high vacuum and ultra high vacuum deposition

conditions

Gerd Plechinger et al., J. Phys. Chem. C, 121 (11), pp 6409–6413 (2017)

Valley-Polarized Exciton Dynamics in Exfoliated Monolayer WSe2

J. Wierzbowski et al., arXiv:1705.00348 (2017)

Direct exciton emission from atomically thin transition metal dichalcogenide heterostructures near the lifetime limit

Philipp Steinleitner et al., Nano Lett., 17 (3), pp 1455–1460 (2017)

Direct Observation of Ultrafast Exciton Formation in a Monolayer of WSe2


Giant Zeeman splitting inducing near-unity valley polarization in van der Waals heterostructures



Philipp Nagler et al., 2D Materials, Volume 4, Number 2 (2017)

Interlayer exciton dynamics in a dichalcogenide monolayer heterostructures




Rigid-layer Raman-active modes in N-layer Transition Metal Dichalcogenides: interlayer force constants and


Feng Zhang et al., Device Research Conference (DRC), 75th Annual (2017)

Novel two-terminal vertical transition metal dichalcogenide based memory selectors

Sanghun Kim et al., 2D Materials, Volume 4, Number 4 (2017)

Excitonic resonance effects and Davydov splitting in circularly polarized Raman spectra of few-layer WSe2

Kyu Hyun Han et al., Nanotechnology (2017)

Sensitive optical bio-sensing of p-type WSe2 hybridized with fluorescent dye attached DNA by doping and de-doping

effects


Valley Dynamics of Excitons in Monolayer Dichalcogenides



Clément Javerzac-Galy et al., arXiv:1710.04294 (2017)

Publications



Excitonic emission of monolayer semiconductors near-field coupled to high-Q microresonators



Feng Zhang et al., arXiv:1709.03835 (2017)

Electric field induced semiconductor-to-metal phase transition in vertical MoTe2 and Mo1-xWxTe2 devices








Philipp Nagler et al., Nature Communications 8, Article number: 1551 (2017)

Giant magnetic splitting inducing near-unity valley polarization in van der Waals heterostructures

L. Waldecker et al., PRL 119, 036803 (2017)

Momentum-Resolved View of Electron-Phonon Coupling in Multilayer WSe2



Soohyun Cho et al., arXiv:1712.01520 (2017)

Experimental observation of hidden Berry curvature in inversion-symmetric bulk 2H-WSe2

Bo Lei et al., Nano Research 10, 4, pp 1282–1291 (2017)

Significantly enhanced optoelectronic performance of tungsten diselenide phototransistor via surface functionalization

Ro-Ya Liu et al., Scientific Reports 7, 15981 (2017)

Femtosecond to picosecond transient effects in WSe 2 observed by pump-probe angle-resolved photoemission

spectroscopy

Simon Zihlmann et al., arXiv:1712.05678 (2017)

Large spin relaxation anisotropy and valley-Zeeman spin-orbit coupling in WSe2/Gr/hBN heterostructures

Tianhua Ren et al., ACS Photonics 5, 353−358 (2018)

Whisper Gallery Modes in Monolayer Tungsten Disulfide-Hexagonal Boron Nitride Optical Cavity

Gerd Plechinger et al., PSS 11, 7, 1700131 (2017)

Valley dynamics of excitons in monolayer dichalcogenides

Ava Khosravi et al., APL Materials 6, 026603 (2018)

Covalent nitrogen doping in molecular beam epitaxy-grown and bulk WSe2

Yong Seon Shin et al., Adv. Mater. 30, 1704435 (2018)

Mobility Engineering in Vertical Field Effect Transistors Based on Van der Waals Heterostructures

Xinglin Wen et al., Nano Lett., Article ASAP (2018)

Plasmonic Hot Carriers-Controlled Second Harmonic Generation in WSe2 Bilayers


Publications





Rafik Addou et al., 2D Materials (2018)

One dimensional metallic edges in atomically thin WSe2 induced by air exposure

Hema C. P. Movva et al., arXiv:1801.03474 (2018)

Tunable Gamma-K Valley Populations in Hole-Doped Trilayer WSe2

Dan Li et al., Nanotechnology 29, 10 (2018)

The ambipolar evolution of a high-performance WSe2 transistor assisted by a ferroelectric polymer

Chongyun Jiang et al., Nature Communications 9:753 (2018)

Microsecond dark-exciton valley polarization memory in two-dimensional heterostructures

Philipp Nagler et al., Proceedings Volume 10530, Ultrafast Phenomena and Nanophotonics XXII; 1053015 (2018)

Optical spectroscopy of interlayer excitons in TMDC heterostructures: exciton dynamics, interactions, and giant

valley-selective magnetic splitting

Bo Lei et al., ACS Nano, 12 (2), pp 2070–2077 (2018)

Direct Observation of Semiconductor–Metal Phase Transition in Bilayer Tungsten Diselenide Induced by Potassium

Surface Functionalization

Ava Khosravi et al., APL Materials 6, 026603 (2018)

Covalent nitrogen doping in molecular beam epitaxy-grown and bulk WSe2

Hema C. P. Movva et al., PRL 120, 107703 (2018)

Tunable Gamma-K Valley Populations in Hole-Doped Trilayer WSe2

Xiaotong Chen et al., arXiv:1808.09984 (2018)




Soonyoung Cha et al., Nature Nanotechnology (2018)

Generation, transport and detection of valley-locked spin photocurrent in WSe2–graphene–Bi2Se3 heterostructures

Di Liu et al., Chinese Physics B (2018)

Optoelectronic properties of bottom gate-defined in-plane monolayer WSe2 p–n junction


WSe2/GeSe heterojunction photodiode with giant gate tenability

M. H. D. Guimaraes and B. Koopmans, arXiv:1806.02558 (2018)

Spin accumulation and dynamics in inversion-symmetric van der Waals crystals

Qingkai Qian et al., PRB 97, 165409 (2018)

Layer-dependent second-order Raman intensity of MoS2 and WSe2: Influence of intervalley scattering

Jeffrey R. Shallenberger, Surface Science Spectra 25, 014001 (2018)

2D tungsten diselenide analyzed by XPS

M. Koperski et al., arXiv:1803.00376 (2018)


monolayers

Publications



Dmitrii Unuchek et al., Nature 560, 340–344 (2018)

Room-temperature electrical control of exciton flux in a van der Waals heterostructure

Yue Liu et al., Frontiers of Physics (2018)

Probing interlayer interactions in WSe2-graphene heterostructures by ultralow-frequency Raman spectroscopy

Maciej Koperski et al., 2D Materials, Volume 6, Number 1 (2018)


Monolayers

Nicolò Oliva et al., IEEE Xplore (2018)

Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control

M. Król et al., arXiv:1809.09571 (2018)

Valley polarization of exciton-polaritons in monolayer WSe2 in a tunable microcavity

Yue Luo et al., arXiv:1804.06541 (2018)

Deterministic coupling of site-controlled quantum emitters in monolayer semiconductors to plasmonic nanocavities

Deep Jariwala et al., 2D Materials 5, 3 (2018)

Nanoscale doping heterogeneity in few-layer WSe2 exfoliated onto noble metals revealed by correlated SPM and

TERS imaging

Mauro Brotons-Gisbert et al., arXiv:1810.02855 (2018)

Coulomb blockade in an atomically thin quantum dot strongly coupled to a tunable Fermi reservoir

Kyunghee Choi et al., ACS Appl. Mater. Interfaces 10 (24), pp 20213–20218 (2018)

Interband Transitions in Monolayer and Few-Layer WSe2 Probed Using Photoexcited Charge Collection

Spectroscopy

Takao Yamaoka et al., Advanced Functional Materials 28, 35 (2018)

Efficient Photocarrier Transfer and Effective Photoluminescence Enhancement in Type I Monolayer MoTe2/WSe2

Heterostructure

Janghyuk Kim et al., ACS Appl. Mater. Interfaces 10 (35), pp 29724–29729 (2018)

Heterostructure WSe2−Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics

Clément Javerzac-Galy et al., Nano Lett. 18 (5), pp 3138–3146 (2018)

Excitonic Emission of Monolayer Semiconductors Near-Field Coupled to High-Q Microresonators

Hisashi Ichimiya et al., ACS Nano 12 (10), pp 10123–10129 (2018)

Tuning Transition-Metal Dichalcogenide Field-Effect Transistors by Spontaneous Pattern Formation of an Ultrathin

Molecular Dopant Film

Xin Lu et al., arXiv:1810.01887 (2018)

Optical control of a single spin-valley in charged WSe2 quantum dots

Giovanni V. Resta et al., ACS Nano 12 (7), pp 7039–7047 (2018)

Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors

Pantelis Bampoulis et al., ACS Appl. Mater. Interfaces 10 (15), pp 13218–13225 (2018)

Local Conduction in MoxW1–xSe2: The Role of Stacking Faults, Defects, and Alloying

Jiadi Zhu et al., Advanced Materials 30 (21), 1800195 (2018)

Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics

Xiaotong Chen et al., Nature Physics (2018)

Publications




Soohyun Cho et al., Phys. Rev. Lett. 121, 186401 (2018)

Experimental Observation of Hidden Berry Curvature in Inversion-Symmetric Bulk 2H−WSe2

Geonyeop Lee et al., Adv. Elec. Mat. (2018)

2D Material‐Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification

Woosuk Choi et al., ACS Appl. Mater. Interfaces (2018)

Twist-Angle-Dependent Optoelectronics in a Few-Layer Transition-Metal Dichalcogenide Heterostructure

Ghazanfar Nazir et al., Nature Communications 9, 5371 (2018)

Ultimate limit in size and performance of WSe2 vertical diodes

Yue Luo et al., Nature Nanotechnology 13, 1137–1142 (2018)

Deterministic coupling of site-controlled quantum emitters in monolayer WSe2 to plasmonic nanocavities

A. I. Dago et al., ACS Appl. Mater. Interfaces 10 (46), pp 40054–40061 (2018)

Direct Patterning of p-Type-Doped Few-layer WSe2 Nanoelectronic Devices by Oxidation Scanning Probe

Lithography

Christopher M. Smyth et al., ACS Appl. Nano Mater., Article ASAP (2018)

Engineering the Palladium–WSe2 Interface Chemistry for Field Effect Transistors with High-Performance Hole

Contacts

Kai-Qiang Lin et al., Nature Physics (2019), arXiv:1811.09479 (2018)


Rui Patrick Xian et al., arXiv:1901.00312 (2019)

Symmetry-guided nonrigid registration: the case for distortion correction in multidimensional photoemission

spectroscopy

Ye Wang et al., J. Phys. Chem. Lett. (2019)

Doping of Monolayer Transition Metal Dichalcogenides via Physisorption of Aromatic Solvent Molecules

Xiaotong Chen et al., Nature Physics 15, 221–227 (2019)


Erfu Liu et al., arXiv:1901.11043 (2019)

Gate tunable dark trions in monolayer WSe2

Shiyu Wu et al., Science China Materials 62, 2, pp 181-193 (2019)

The influence of two-dimensional organic adlayer thickness on the ultralow frequency Raman spectra of transition

metal dichalcogenide nanosheets



Bo Lei et al., 2D Materials 6, 2 (2019)

Nondestructive hole doping enabled photocurrent enhancement of layered tungsten diselenide

Xin Lu et al., Nature Nanotechnology (2019)

Optical initialization of a single spin-valley in charged WSe2 quantum dots

Lingling Wu et al., ACSNano, 13, 2341−2348 (2019)

Ultrafast Energy Transfer of Both Bright andDark Excitons in 2D van der WaalsHeterostructures Beyond Dipolar

Coupling

Publications



Fabien Vialla et al., 2D Materials (2019)

Tuning of impurity-bound interlayer complexes in a van der Waals heterobilayer

Hisashi Ichimiya et al., ACS Appl. Mater. Interfaces (2019)

Electronic Structure Mosaicity of Monolayer Transition Metal Dichalcogenides by Spontaneous Pattern Formation of

Donor Molecules

Yue Luo et al., 2D Materials (2019), arXiv:1903.00126 (2019)

Single photon emission in WSe2 up 160 K by quantum yield control



Hyun Kim et al., Nanotechnology 30, 41 (2019)

Intimate Ohmic contact to two-dimensional WSe2 via thermal alloying

Nature Photonics 13, 131–136 (2019)

Polarization switching and electrical control of interlayer excitons in two-dimensional van der Waals heterostructures

Rui Guo et al., Materials Today (2019)

Degenerate electron-doping in two-dimensional tungsten diselenide with a dimeric organometallic reductant

M. Król et al., arXiv:1908.05300 (2019)

Exciton-polaritons in multilayer WSe2 in a planar microcavity



Jiwon Shin et al., Nanoscale 29, (2019)

Dose-dependent effect of proton irradiation on electrical properties of WSe2 ambipolar field effect transistors



Mateusz Król et al., Nanoscale 19 (2019)

Valley polarization of exciton–polaritons in monolayer WSe2 in a tunable microcavity

Younghun Jung et al., Nature Electronics 2, 187–194 (2019)

Transferred via contacts as a platform for ideal two-dimensional transistors



dichalcogenides

Sohail Ahmed et al., Small 1903173 (2019)

High Coercivity and Magnetization in WSe2 by Codoping Co and Nb

Junjun Wang et al., Adv. Sci. 6, 1801841 (2019)

Controlling Injection Barriers for Ambipolar 2D Semiconductors via Quasi-van der Waals Contacts

Lukas Mennel et al., arXiv:1909.00205 (2019)

Real-time image processing with a 2D semiconductor neural network vision sensor

Nicolò Oliva et al., IEEE Journal of the Electron Devices Society (2019)

Hysteresis dynamics in double-gated n-type WSe2 FETs with high-k top gate dielectric

Publications



Marc-Antoine Stoeckel et al., ACS Nano (2019)

Boosting and Balancing Electron and Hole Mobility in Single- and Bilayer WSe2 Devices via Tailored Molecular

Functionalization

R. Patrick Xian et al., Ultramicroscopy 202, 133-139 (2019)

Symmetry-guided nonrigid registration: The case for distortion correction in multidimensional photoemission

spectroscopy

Wenjin Zhang et al., ACS Omega 4, 10322−10327 (2019)

Photostability of Monolayer Transition-Metal Dichalcogenides in Ambient Air and Acidic/Basic Aqueous Solutions

Rui Patrick Xian et al., arXiv:1909.07714 (2019)

An open-source, distributed workflow for band mapping data in multidimensional photoemission spectroscopy

Christopher M Smyth et al., 2D Materials, Volume 6, Number 4 (2019)

Engineering the interface chemistry for scandium electron contacts in WSe2 transistors and diodes

Jun Hong Park et al., ACS Nano 13, 7, 7545-7555 (2019)

Band Structure Engineering of Layered WSe2 via One-Step Chemical Functionalization



Dmytro Kutnyakhov et al., arXiv:1906.12155 (2019)

Time- and momentum-resolved photoemission studies using time-of-flight momentum microscopy at a free-electron

laser

Feng Zhang, thesis (2019)Transition Metal Dichalcogenide Based Memory Devices and Transistors

WTe2

L.R. Thoutam et al., PRL 115, 046602 (2015)

Temperature-Dependent Three-Dimensional Anisotropy of the Magnetoresistance in WTe2

D. MacNeill et al., arXiv:1605.02712 (2016)

Control of spin-orbit torques through crystal symmetry in WTe2/ferromagnet bilayers

Yaojia Wang et al., Nat. Comm. 7:13142 (2016), arXiv:1608.05003 (2016)

Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe2

Pengchao Lu et al., PRB 94, 224512 (2016)

Origin of superconductivity in the Weyl semimetal WTe2 under pressure

D. MacNeill et al., Nature Physics 13, 300–305 (2017)

Control of spin–orbit torques through crystal symmetry in WTe2/ferromagnet bilayers

Haifeng Wang et al., Phys. Rev. B 96, 165418 (2017)

Cleavage tendency of anisotropic two-dimensional materials: ReX2 (X=S,Se) and WTe2

David MacNeill et al., Phys. Rev. B 96, 054450 (2017) , arXiv:1707.03757 (2017)

Thickness dependence of spin-orbit torques generated by WTe2

Gabriella D Shepard et al., 2D Materials, Volume 4, Number 2 (2017)

Nanobubble induced formation of quantum emitters in monolayer semiconductors

Publications



Min-Kyu Joo et al., 2D Materials, Volume 4, Number 2 (2017)

Feasibility of ultra-sensitive 2D layered Hall elements

Chun-Liang Lin et al., ACS Nano, Article ASAP (2017)

Visualizing Type-II Weyl Points in Tungsten Ditelluride by Quasiparticle Interference

Peng Li et al., Nat. Comm. 8, 2150 (2017)

Evidence for topological type-II Weyl semimetal WTe2

Kaifei Kang et al., arXiv:1809.08744 (2018)

Observation of the nonlinear anomalous Hall effect in 2D WTe2

Paul Seifert et al., arXiv:1810.01510 (2018)

Photo-induced anomalous Hall effect in the type-II Weyl-semimetal WTe2 at room-temperature

Peng Li et al., Nature Communications 9, 3990 (2018)

Spin-momentum locking and spin-orbit torques in magnetic nano-heterojunctions composed of Weyl semimetal

WTe2

Bing Zhao et al., arXiv:1812.02113 (2018)Observation of Spin Hall Effect in Semimetal WTe2

Jeehoon Jeon et al., Journal of the Korean Physical Society, Vol. 74, No. 2, pp. 154∼158 (2019)

Electrical Observation of the Effective Mass in a Single-Crystal WTe2 Layer

Kaifei Kang et al., Nature Materials 18, 324–328 (2019)

Nonlinear anomalous Hall effect in few-layer WTe2

Pan He et al., Nature Communications 10, 1290 (2019)

Nonlinear magnetotransport shaped by Fermi surface topology and convexity

Jakub Schusser et al., AIP Conference Proceedings 2131, 020041 (2019)

Angle-resolved photoemission calculations of WTe2 compared to experiment

Paul Alexander Vermeulen et al., CrystEngComm 22 (2019)

Low temperature epitaxy of tungsten–telluride heterostructure films

Paul Seifert et al., Phys. Rev. B 99, 161403(R) (2019)

In-plane anisotropy of the photon-helicity induced linear Hall effect in few-layer WTe2



Pan He et al., arXiv:1904.12492 (2019)

Nonlinear magnetotransport shaped by Fermi surface topology and convexity in WTe2

Shuyuan Shi et al., Nature Nanotechnology (2019)

All-electric magnetization switching and Dzyaloshinskii–Moriya interaction in WTe2/ferromagnet heterostructures

Pankaj Sharma et al., Sci. Adv. 5, 7, eaax508 (2019)

A room-temperature ferroelectric semimetal



ZrTe3

Publications



A. Geremew et al., IEEE Electron Device Letters 39, 5 ,(2018)

Current Carrying Capacity of Quasi-1D ZrTe3 Van Der Waals Nanoribbons

ZrTe5

P. Li et al., PRB 98, 121108(R) (2018)

Giant planar Hall effect in the Dirac semimetal ZrTe_5-delta

Publications - HQ grapheneDual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron...

Documents

Transcript of Publications - HQ grapheneDual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron...