PSMN4R8-100BSE - NexperiaPSMN4R8-100BSE N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK 12...

PSMN4R8-100BSEN-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK12 April 2013 Product data sheet

1. General descriptionStandard level N-channel MOSFET in a D2PAK package qualified to 175 °C. Part of Nexperia's "NextPower Live" portfolio, the PSMN4R8-100BSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn on, whilst offering a low RDS(on) characteristic to keep temperatures down and efficiency up in continued use. Ideal for telecommunication systems based on a 48 V backplane / supply rail.

2. Features and benefits• Enhanced forward biased safe operating area for superior linear mode operation• Very low RDS(on) for low conduction losses

3. Applications• Electronic fuse• Hot swap• Load switch• Soft start

4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V

IDM peak drain current pulsed; Tmb = 25 °C; tp ≤ 10 µs; Fig. 4 - - 707 A

Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 405 W

Static characteristics

RDSon drain-source on-stateresistance

VGS = 10 V; ID = 25 A; Tj = 25 °C;Fig. 12

- 4.1 4.8 mΩ

Dynamic characteristics

QGD gate-drain charge - 59 83 nC

QG(tot) total gate charge

VGS = 10 V; ID = 25 A; VDS = 50 V;Fig. 14; Fig. 15 - 196 278 nC

© Nexperia B.V. 2017. All rights reserved

Nexperia PSMN4R8-100BSEN-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK

PSMN4R8-100BSE All information provided in this document is subject to legal disclaimers.

Product data sheet 12 April 2013 2 / 13

Symbol Parameter Conditions Min Typ Max Unit

Avalanche Ruggedness

EDS(AL)S non-repetitive drain-source avalancheenergy

VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;Vsup ≤ 100 V; RGS = 50 Ω; unclamped;Fig. 3

- - 542 mJ

5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 G gate

2 D drain[1]

3 S source

mb D mounting base; connected todrain

mb

1 3

2

D2PAK (SOT404)

S

D

G

mbb076

[1] It is not possible to make connection to pin 2

6. Ordering informationTable 3. Ordering information

PackageType number

Name Description Version

PSMN4R8-100BSE D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads(one lead cropped)

SOT404

7. MarkingTable 4. Marking codesType number Marking code

PSMN4R8-100BSE PSMN4R8-100BSE

8. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V

VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 100 V

VGS gate-source voltage -20 20 V





Symbol Parameter Conditions Min Max Unit

VGS = 10 V; Tj = 25 °C; Fig. 1 [1] - 120 AID drain current

VGS = 10 V; Tmb = 100 °C; Fig. 1 [1] - 120 A

IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4 - 707 A

Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 405 W

Tstg storage temperature -55 175 °C

Tj junction temperature -55 175 °C

Tsld(M) peak soldering temperature - 260 °C

Source-drain diode

IS source current Tmb = 25 °C [1] - 120 A

ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 707 A

Avalanche Ruggedness

EDS(AL)S non-repetitive drain-sourceavalanche energy

VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;Vsup ≤ 100 V; RGS = 50 Ω; unclamped;Fig. 3

- 542 mJ

[1] Continuous current limited by package.

003aaj964

0

40

80

120

160

200

0 50 100 150 200Tmb(°C)

ID(A)

(1)

(1) Capped at 120A due to package

Fig. 1. Continuous drain current as a function ofmounting base temperature

Tmb (°C)0 20015050 100

03aa16

40

80

120

Pder(%)

0

Fig. 2. Normalized total power dissipation as afunction of mounting base temperature





003aaj965

10-3 10-2 10-1 1 101

10

102

103

tAL (ms)

IALIAL(A)(A)

(1)(1)

(2)(2)

Fig. 3. Single pulse avalanche rating; avalanche current as a function of avalanche time

003aaj966

10-1

1

10

102

103

104

10-1 1 10 102 103

VDS(V)

ID(A)

Limit RDSon= VDS/ ID

DC

100 µs

10 ms

tp =10 µs

100 ms

1 ms

Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

9. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistancefrom junction tomounting base

Fig. 5 - 0.3 0.37 K/W

Rth(j-a) thermal resistancefrom junction toambient

Minimum footprint; mounted on aprinted circuit board

- 50 - K/W





003aaj353

single shot

0.2

0.1

0.05

10-3

10-2

10-1

1

10-6 10-5 10-4 10-3 10-2 10-1 1tp (s)

Zth(j-mb)(K/W)

δ = 0.5

0.02

tpT

P

t

tpT

δ =

Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

10. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

Static characteristics

ID = 250 µA; VGS = 0 V; Tj = 25 °C 100 - - VV(BR)DSS drain-sourcebreakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 90 - - V

VGS(th) gate-source thresholdvoltage

ID = 1 mA; VDS = VGS; Tj = 25 °C;Fig. 10; Fig. 11

2 3 4 V

ID = 1 mA; VDS = VGS; Tj = 175 °C;Fig. 11

1 - - VVGSth gate-source thresholdvoltage

ID = 1 mA; VDS = VGS; Tj = -55 °C;Fig. 11

- - 4.6 V

VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.16 10 µAIDSS drain leakage current

VDS = 100 V; VGS = 0 V; Tj = 175 °C - - 500 µA

VGS = -20 V; VDS = 0 V; Tj = 25 °C - 10 100 nAIGSS gate leakage current

VGS = 20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA

VGS = 10 V; ID = 25 A; Tj = 25 °C;Fig. 12

- 4.1 4.8 mΩ

VGS = 10 V; ID = 25 A; Tj = 100 °C;Fig. 13; Fig. 12

- - 8.7 mΩ

RDSon drain-source on-stateresistance

VGS = 10 V; ID = 25 A; Tj = 175 °C;Fig. 12; Fig. 13

- - 13 mΩ

RG gate resistance f = 1 MHz 0.43 0.85 1.7 Ω





Symbol Parameter Conditions Min Typ Max Unit

Dynamic characteristics

ID = 25 A; VDS = 50 V; VGS = 10 V;Fig. 14; Fig. 15

- 196 278 nCQG(tot) total gate charge

ID = 0 A; VDS = 0 V; VGS = 10 V - 166.9 234 nC

QGS gate-source charge - 40 56 nC

QGD gate-drain charge

ID = 25 A; VDS = 50 V; VGS = 10 V;Fig. 14; Fig. 15 - 59 83 nC

VGS(pl) gate-source plateauvoltage

ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15 - 4.3 - V

Ciss input capacitance - 10665 14400 pF

Coss output capacitance - 674 910 pF

Crss reverse transfercapacitance

VDS = 50 V; VGS = 0 V; f = 1 MHz;Tj = 25 °C; Fig. 16

- 459 643 pF

td(on) turn-on delay time - 41 61.5 ns

tr rise time - 65 97.5 ns

td(off) turn-off delay time - 127 190.5 ns

tf fall time

VDS = 50 V; RL = 2 Ω; VGS = 10 V;RG(ext) = 4.7 Ω

- 69 103.5 ns

Source-drain diode

VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.79 1.2 V

trr reverse recovery time - 72 94 ns

Qr recovered charge

IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;VDS = 50 V - 227 296 nC

003aaj968

0

40

80

120

0 1 2 3 4VDS(V)

ID(A)

VGS(V) = 4

4.5

5

610

5.5

Fig. 6. Output characteristics; drain current as afunction of drain-source voltage; typical values

003aaj969

0

5

10

15

20

0 4 8 12 16VGS(V)

RDSon(mΩ)

Fig. 7. Drain-source on-state resistance as a functionof gate-source voltage; typical values





003aaj970

0

40

80

120

160

200

0 60 120 180 240 300ID (A)

gfs(S)

Fig. 8. Forward transconductance as a function ofdrain current; typical values

003aaj971

0

60

120

180

240

300

0 2 4 6 8VGS(V)

ID(A)

Tj = 25 °CTj = 150 °C

Fig. 9. Transfer characteristics; drain current as afunction of gate-source voltage; typical values

03aa35

VGS (V)0 642

10- 4

10- 5

10- 2

10- 3

10- 1

ID(A)

10- 6

min typ max

Fig. 10. Sub-threshold drain current as a function ofgate-source voltage

Tj (°C)- 60 1801200 60

003aad280

2

3

1

4

5VGS(th)

(V)

0

max

typ

min

Fig. 11. Gate-source threshold voltage as a function ofjunction temperature





003aaj974

0

10

20

30

0 40 80 120ID(A)

RDSon(mΩ)

VGS(V) = 10

5 5.5

6

4.5

Fig. 12. Drain-source on-state resistance as a functionof drain current; typical values

003aad774

0

0.8

1.6

2.4

3.2

-60 0 60 120 180Tj (°C)

a

Fig. 13. Normalized drain-source on-state resistancefactor as a function of junction temperature

003aaa508

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

ID

QGS

VGS(pl)

Fig. 14. Gate charge waveform definitions

003aaj976

0

2

4

6

8

10

0 50 100 150 200 250QG (nC)

VGS(V)

VDS= 50V

80 V

20 V

Fig. 15. Gate-source voltage as a function of gatecharge; typical values





003aaj977

102

103

104

105

10-1 1 10 102VDS(V)

C(pF)

Ciss

Crss

Coss

Fig. 16. Input, output and reverse transfer capacitancesas a function of drain-source voltage; typicalvalues

003aaj978

0

40

80

120

0 0.3 0.6 0.9 1.2VSD(V)

IS(A)

Tj = 25 °C

Tj = 175°C

Fig. 17. Source current as a function of source-drainvoltage; typical values





11. Package outline

ReferencesOutlineversion

Europeanprojection Issue date

IEC JEDEC JEITA

SOT404

sot404_po

06-03-1613-02-25

Unit

mmmaxnommin

4.5

4.1

1.40

1.27

1.45

1.05

0.64

0.46

11 1.6

1.2

A

Dimensions (mm are the original dimensions)

Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404

A1 b

0.85

0.60

b2 c D D1 E e HD Lp Q

2.5415.8

14.8

2.6

2.2

10.3

9.7

2.9

2.1

0 5 mm

scale

e e

E

b

D1

HD

D

b2

Q

Lp

c

A1

A

1 3

2

mountingbase

Fig. 18. Package outline D2PAK (SOT404)





12. Legal information

12.1 Data sheet statusDocumentstatus [1][2]

Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] datasheet

Qualification This document contains data from thepreliminary specification.

Product[short] datasheet

Production This document contains the productspecification.

[1] Please consult the most recently issued document before initiating orcompleting a design.

[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.nexperia.com.

12.2 DefinitionsPreview — The document is a preview version only. The document is stillsubject to formal approval, which may result in modifications or additions.Nexperia does not give any representations or warranties as tothe accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. Nexperia does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequencesof use of such information.

Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local Nexperiasales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed betweenNexperia and its customer, unless Nexperia andcustomer have explicitly agreed otherwise in writing. In no event however,shall an agreement be valid in which the Nexperia productis deemed to offer functions and qualities beyond those described in theProduct data sheet.

12.3 DisclaimersLimited warranty and liability — Information in this document is believedto be accurate and reliable. However, Nexperia does not giveany representations or warranties, expressed or implied, as to the accuracyor completeness of such information and shall have no liability for theconsequences of use of such information. Nexperia takes noresponsibility for the content in this document if provided by an informationsource outside of Nexperia.

In no event shall Nexperia be liable for any indirect, incidental,punitive, special or consequential damages (including - without limitation -lost profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.

Notwithstanding any damages that customer might incur for any reasonwhatsoever, Nexperia’s aggregate and cumulative liability towardscustomer for the products described herein shall be limited in accordancewith the Terms and conditions of commercial sale of Nexperia.

Right to make changes — Nexperia reserves the right tomake changes to information published in this document, including withoutlimitation specifications and product descriptions, at any time and withoutnotice. This document supersedes and replaces all information supplied priorto the publication hereof.

Suitability for use — Nexperia products are not designed,authorized or warranted to be suitable for use in life support, life-critical orsafety-critical systems or equipment, nor in applications where failure ormalfunction of a Nexperia product can reasonably be expectedto result in personal injury, death or severe property or environmentaldamage. Nexperia and its suppliers accept no liability forinclusion and/or use of Nexperia products in such equipment orapplications and therefore such inclusion and/or use is at the customer’s ownrisk.

Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.

Customers are responsible for the design and operation of theirapplications and products using Nexperia products, and Nexperiaaccepts no liability for any assistance with applications orcustomer product design. It is customer’s sole responsibility to determinewhether the Nexperia product is suitable and fit for thecustomer’s applications and products planned, as well as for the plannedapplication and use of customer’s third party customer(s). Customers shouldprovide appropriate design and operating safeguards to minimize the risksassociated with their applications and products.

Nexperia does not accept any liability related to any default,damage, costs or problem which is based on any weakness or defaultin the customer’s applications or products, or the application or use bycustomer’s third party customer(s). Customer is responsible for doing allnecessary testing for the customer’s applications and products using Nexperiaproducts in order to avoid a default of the applicationsand the products or of the application or use by customer’s third partycustomer(s). Nexperia does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.

Terms and conditions of commercial sale — Nexperiaproducts are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects toapplying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer.

No offer to sell or license — Nothing in this document may be interpretedor construed as an offer to sell products that is open for acceptance or the

http://www.nexperia.com/profile/terms





grant, conveyance or implication of any license under any copyrights, patentsor other industrial or intellectual property rights.

Export control — This document as well as the item(s) described hereinmay be subject to export control regulations. Export might require a priorauthorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expresslystates that this specific Nexperia product is automotive qualified,the product is not suitable for automotive use. It is neither qualified nortested in accordance with automotive testing or application requirements.Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use inautomotive applications to automotive specifications and standards,customer (a) shall use the product without Nexperia’s warrantyof the product for such automotive applications, use and specifications, and(b) whenever customer uses the product for automotive applications beyondNexperia’s specifications such use shall be solely at customer’sown risk, and (c) customer fully indemnifies Nexperia for anyliability, damages or failed product claims resulting from customer design anduse of the product for automotive applications beyond Nexperia’sstandard warranty and Nexperia’s product specifications.

Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancybetween the translated and English versions.

12.4 TrademarksNotice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.





13. Contents1 General description ............................................... 12 Features and benefits ............................................13 Applications ........................................................... 14 Quick reference data ............................................. 15 Pinning information ...............................................26 Ordering information .............................................27 Marking ................................................................... 28 Limiting values .......................................................29 Thermal characteristics .........................................410 Characteristics .......................................................511 Package outline ................................................... 1012 Legal information .................................................1112.1 Data sheet status ............................................... 1112.2 Definitions ...........................................................1112.3 Disclaimers .........................................................1112.4 Trademarks ........................................................ 12

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 12 April 2013

PSMN4R8-100BSE - NexperiaPSMN4R8-100BSE N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK 12...

Documents

Transcript of PSMN4R8-100BSE - NexperiaPSMN4R8-100BSE N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK 12...