PSMN1R1-30PL - Nexperia...PSMN1R1-30PL N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 2 April...

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PSMN1R1-30PL N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources 3. Applications DC-to-DC converters Load switiching Motor control Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V DS drain-source voltage T j ≥ 25 °C; T j ≤ 175 °C - - 30 V I D drain current T mb = 25 °C; V GS = 10 V; Fig. 2 [1] - - 120 A P tot total power dissipation T mb = 25 °C; Fig. 1 - - 338 W T j junction temperature -55 - 175 °C Static characteristics V GS = 10 V; I D = 25 A; T j = 25 °C; Fig. 12 [2] - 1.1 1.3 R DSon drain-source on-state resistance V GS = 10 V; I D = 25 A; T j = 100 °C; Fig. 13 - 1.5 1.8 Dynamic characteristics Q GD gate-drain charge - 37 - nC Q G(tot) total gate charge V GS = 4.5 V; I D = 75 A; V DS = 15 V; Fig. 14 ; Fig. 15 - 118 - nC

Transcript of PSMN1R1-30PL - Nexperia...PSMN1R1-30PL N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 2 April...

Page 1: PSMN1R1-30PL - Nexperia...PSMN1R1-30PL N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in TO-220

PSMN1R1-30PLN-channel 30 V 1.3 mΩ logic level MOSFET in TO-2202 April 2014 Product data sheet

1. General descriptionLogic level N-channel MOSFET in TO-220 package qualified to 175 °C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.

2. Features and benefits• High efficiency due to low switching and conduction losses• Suitable for logic level gate drive sources

3. Applications• DC-to-DC converters• Load switiching• Motor control• Server power supplies

4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 30 V

ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 2 [1] - - 120 A

Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 338 W

Tj junction temperature -55 - 175 °C

Static characteristics

VGS = 10 V; ID = 25 A; Tj = 25 °C;Fig. 12

[2] - 1.1 1.3 mΩRDSon drain-source on-stateresistance

VGS = 10 V; ID = 25 A; Tj = 100 °C;Fig. 13

- 1.5 1.8 mΩ

Dynamic characteristics

QGD gate-drain charge - 37 - nC

QG(tot) total gate charge

VGS = 4.5 V; ID = 75 A; VDS = 15 V;Fig. 14; Fig. 15 - 118 - nC

Page 2: PSMN1R1-30PL - Nexperia...PSMN1R1-30PL N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in TO-220

© Nexperia B.V. 2017. All rights reserved

Nexperia PSMN1R1-30PLN-channel 30 V 1.3 mΩ logic level MOSFET in TO-220

PSMN1R1-30PL All information provided in this document is subject to legal disclaimers.

Product data sheet 2 April 2014 2 / 14

Symbol Parameter Conditions Min Typ Max Unit

Avalanche ruggedness

EDS(AL)S non-repetitive drain-source avalancheenergy

VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;Vsup ≤ 30 V; RGS = 50 Ω; unclamped

- - 1.9 J

[1] Continuous current is limited by package.[2] Measured 3 mm from package.

5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 G gate

2 D drain

3 S source

mb D mounting base; connected todrain

1 2

mb

3

TO-220AB (SOT78)

S

D

G

mbb076

6. Ordering informationTable 3. Ordering information

PackageType number

Name Description Version

PSMN1R1-30PL TO-220AB plastic single-ended package; heatsink mounted; 1 mountinghole; 3-lead TO-220AB

SOT78

7. MarkingTable 4. Marking codesType number Marking code

PSMN1R1-30PL PSMN1R1-30PL

Page 3: PSMN1R1-30PL - Nexperia...PSMN1R1-30PL N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in TO-220

© Nexperia B.V. 2017. All rights reserved

Nexperia PSMN1R1-30PLN-channel 30 V 1.3 mΩ logic level MOSFET in TO-220

PSMN1R1-30PL All information provided in this document is subject to legal disclaimers.

Product data sheet 2 April 2014 3 / 14

8. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 30 V

VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 30 V

VGS gate-source voltage -20 20 V

Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 338 W

VGS = 10 V; Tmb = 100 °C; Fig. 2 [1] - 120 AID drain current

VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] - 120 A

IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 1609 A

Tstg storage temperature -55 175 °C

Tj junction temperature -55 175 °C

Tsld(M) peak soldering temperature - 260 °C

Source-drain diode

IS source current Tmb = 25 °C [1] - 120 A

ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 1609 A

Avalanche ruggedness

EDS(AL)S non-repetitive drain-sourceavalanche energy

VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;Vsup ≤ 30 V; RGS = 50 Ω; unclamped

- 1.9 J

[1] Continuous current is limited by package.

Page 4: PSMN1R1-30PL - Nexperia...PSMN1R1-30PL N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in TO-220

© Nexperia B.V. 2017. All rights reserved

Nexperia PSMN1R1-30PLN-channel 30 V 1.3 mΩ logic level MOSFET in TO-220

PSMN1R1-30PL All information provided in this document is subject to legal disclaimers.

Product data sheet 2 April 2014 4 / 14

Tmb (°C)0 20015050 100

03aa16

40

80

120

Pder(%)

0

Fig. 1. Normalized total power dissipation as afunction of mounting base temperature

003aaf774

0

100

200

300

400

500

0 50 100 150 200Tmb ( C)

ID

(A)

(1)

Fig. 2. Continuous drain current as a function ofmounting base temperature.

003aa f773

10-1

1

10

102

103

104

10-1 1 10 102

V DS (V)

ID

(A)

Limit RDS on = VDS / ID

DC

100 ms

10 ms

tp =10 ms

100 ms

1 ms

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

9. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistancefrom junction tomounting base

Fig. 4 - 0.22 0.44 K/W

Page 5: PSMN1R1-30PL - Nexperia...PSMN1R1-30PL N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in TO-220

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Nexperia PSMN1R1-30PLN-channel 30 V 1.3 mΩ logic level MOSFET in TO-220

PSMN1R1-30PL All information provided in this document is subject to legal disclaimers.

Product data sheet 2 April 2014 5 / 14

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistancefrom junction toambient

Vertical in free air - 60 - K/W

003aaf772

10-3

10-2

10-1

1

10-6 10-5 10-4 10-3 10-2 10-1 1tp (s)

tpT

P

t

tpT

δ =

Zth(j-mb)(K/W)

δ = 0.5

0.2

0.1

0.05

0.02

single shot

Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typicalvalues

10. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

Static characteristics

ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - VV(BR)DSS drain-sourcebreakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 27 - - V

ID = 1 mA; VDS = VGS; Tj = 25 °C;Fig. 10; Fig. 11

1.3 1.7 2.2 V

ID = 2 mA; VDS = VGS; Tj = 175 °C;Fig. 11

0.5 - - V

VGS(th) gate-source thresholdvoltage

ID = 1 mA; VDS = VGS; Tj = -55 °C;Fig. 11

- - 2.5 V

VDS = 30 V; VGS = 0 V; Tj = 25 °C - 0.02 10 µAIDSS drain leakage current

VDS = 30 V; VGS = 0 V; Tj = 175 °C - 250 500 µA

VGS = 16 V; VDS = 0 V; Tj = 25 °C - 10 100 nAIGSS gate leakage current

VGS = -16 V; VDS = 0 V; Tj = 25 °C - 10 100 nA

RDSon drain-source on-stateresistance

VGS = 10 V; ID = 25 A; Tj = 25 °C;Fig. 12

[1] - 1.1 1.3 mΩ

Page 6: PSMN1R1-30PL - Nexperia...PSMN1R1-30PL N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in TO-220

© Nexperia B.V. 2017. All rights reserved

Nexperia PSMN1R1-30PLN-channel 30 V 1.3 mΩ logic level MOSFET in TO-220

PSMN1R1-30PL All information provided in this document is subject to legal disclaimers.

Product data sheet 2 April 2014 6 / 14

Symbol Parameter Conditions Min Typ Max Unit

VGS = 4.5 V; ID = 25 A; Tj = 25 °C;Fig. 12

- 1.2 1.4 mΩ

VGS = 10 V; ID = 25 A; Tj = 175 °C;Fig. 13; Fig. 12

- 2.1 2.5 mΩ

VGS = 10 V; ID = 25 A; Tj = 100 °C;Fig. 13

- 1.5 1.8 mΩ

RG gate resistance f = 1 MHz - 1.1 - Ω

Dynamic characteristics

ID = 75 A; VDS = 15 V; VGS = 10 V;Fig. 14; Fig. 15

- 243 - nC

ID = 0 A; VDS = 0 V; VGS = 10 V;Fig. 14; Fig. 15

- 223 - nC

QG(tot) total gate charge

- 118 - nC

QGS gate-source charge - 39 - nC

QGS(th) pre-threshold gate-source charge

- 22 - nC

QGS(th-pl) post-threshold gate-source charge

- 17 - nC

QGD gate-drain charge

ID = 75 A; VDS = 15 V; VGS = 4.5 V;Fig. 14; Fig. 15

- 37 - nC

VGS(pl) gate-source plateauvoltage

VDS = 15 V; Fig. 14; Fig. 15 - 2.8 - V

Ciss input capacitance - 14850 - pF

Coss output capacitance - 2799 - pF

Crss reverse transfercapacitance

VDS = 15 V; VGS = 0 V; f = 1 MHz;Tj = 25 °C; Fig. 16

- 1215 - pF

td(on) turn-on delay time - 95 - ns

tr rise time - 213 - ns

td(off) turn-off delay time - 199 - ns

tf fall time

VDS = 15 V; RL = 0.2 Ω; VGS = 4.5 V;RG(ext) = 5 Ω; ID = 75 A; Tj = 25 °C

- 115 - ns

Source-drain diode

VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.8 1.2 V

trr reverse recovery time - 67 - ns

Qr recovered charge

IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;VDS = 15 V - 123 - nC

[1] Measured 3 mm from package.

Page 7: PSMN1R1-30PL - Nexperia...PSMN1R1-30PL N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in TO-220

© Nexperia B.V. 2017. All rights reserved

Nexperia PSMN1R1-30PLN-channel 30 V 1.3 mΩ logic level MOSFET in TO-220

PSMN1R1-30PL All information provided in this document is subject to legal disclaimers.

Product data sheet 2 April 2014 7 / 14

003aaf762

0

60

120

180

240

300

0 20 40 60 80ID (A)

gfs(S)

Fig. 5. Forward transconductance as a function ofdrain current; typical values

003aaf763

0

15

30

45

60

75

0 0.6 1.2 1.8 2.4 3VGS(V)

ID(A)

Tj = 25 °CTj = 175 °C

Fig. 6. Transfer characteristics: drain current as afunction of gate-source voltage; typical values

003aaf764

0

1

2

3

4

5

0 4 8 12 16VGS(V)

RDSon(mΩ)

Fig. 7. Drain-source on-state resistance as a functionof gate-source voltage; typical values

003aad011

0

50

100

150

200

250

300

0 2 4 6 8 10VDS (V)

ID(A)

3.5

34.5

2.8

2.6

VGS (V) = 2.4

10

Fig. 8. Output characteristics: drain current as afunction of drain-source voltage; typical values

Page 8: PSMN1R1-30PL - Nexperia...PSMN1R1-30PL N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in TO-220

© Nexperia B.V. 2017. All rights reserved

Nexperia PSMN1R1-30PLN-channel 30 V 1.3 mΩ logic level MOSFET in TO-220

PSMN1R1-30PL All information provided in this document is subject to legal disclaimers.

Product data sheet 2 April 2014 8 / 14

003aaf766

103

104

105

10-1 1 10 102VGS(V)

C(pF)

Ciss

Crss

Fig. 9. Input and reverse transfer capacitances as afunction of gate-source voltage; typical values

003aab271

10-6

10-5

10-4

10-3

10-2

10-1

0 1 2 3VGS (V)

ID(A)

maxtypmin

Fig. 10. Sub-threshold drain current as a function ofgate-source voltage

003aac982

0

1

2

3

-60 0 60 120 180Tj (°C)

VGS (th)

(V) max

typ

min

Fig. 11. Gate-source threshold voltage as a function ofjunction temperature

003aad012

0

2

4

6

8

10

0 100 200 300ID (A)

RDSon

(mΩ)

3.5

2.6

10

4.5

VGS (V) = 32.8

Fig. 12. Drain-source on-state resistance as a functionof drain current; typical values

Page 9: PSMN1R1-30PL - Nexperia...PSMN1R1-30PL N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in TO-220

© Nexperia B.V. 2017. All rights reserved

Nexperia PSMN1R1-30PLN-channel 30 V 1.3 mΩ logic level MOSFET in TO-220

PSMN1R1-30PL All information provided in this document is subject to legal disclaimers.

Product data sheet 2 April 2014 9 / 14

003aaf767

0

0.5

1

1.5

2

-60 0 60 120 180Tj ( C)

a

Fig. 13. Normalized drain-source on-state resistancefactor as a function of junction temperature

003aaa508

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

ID

QGS

VGS(pl)

Fig. 14. Gate charge waveform definitions

003aaf768

0

2

4

6

8

10

0 100 200 300QG (nC)

VGS(V)

VDS= 6V

24V

15V

Fig. 15. Gate-source voltage as a function of gatecharge; typical values

003aaf769

102

103

104

105

10-1 1 10 102VDS(V)

C(pF)

Ciss

Crss

Coss

Fig. 16. Input, output and reverse transfer capacitancesas a function of drain-source voltage; typicalvalues

Page 10: PSMN1R1-30PL - Nexperia...PSMN1R1-30PL N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in TO-220

© Nexperia B.V. 2017. All rights reserved

Nexperia PSMN1R1-30PLN-channel 30 V 1.3 mΩ logic level MOSFET in TO-220

PSMN1R1-30PL All information provided in this document is subject to legal disclaimers.

Product data sheet 2 April 2014 10 / 14

003aaf770

0

15

30

45

60

75

0 0.2 0.4 0.6 0.8 1VSD(V)

IS(A)

Tj = 25 °CTj = 175 °C

Fig. 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values

Page 11: PSMN1R1-30PL - Nexperia...PSMN1R1-30PL N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in TO-220

© Nexperia B.V. 2017. All rights reserved

Nexperia PSMN1R1-30PLN-channel 30 V 1.3 mΩ logic level MOSFET in TO-220

PSMN1R1-30PL All information provided in this document is subject to legal disclaimers.

Product data sheet 2 April 2014 11 / 14

11. Package outline

REFERENCESOUTLINEVERSION

EUROPEANPROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT78 SC-463-lead TO-220AB

SOT78

08-04-2308-06-13

Notes1. Lead shoulder designs may vary.2. Dimension includes excess dambar.

UNIT A

mm 4.74.1

1.401.25

0.90.6

0.70.4

16.015.2

6.65.9

10.39.7

15.012.8

3.302.79

3.83.5

A1

DIMENSIONS (mm are the original dimensions)

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

0 5 10 mm

scale

b b1(2)

1.61.0

c D

1.31.0

b2(2) D1 E e

2.54

L L1(1) L2(1)max.

3.0

p q

3.02.7

Q

2.62.2

D

D1

q

p

L

1 2 3

L1(1)

b1(2)

(3×)

b2(2)

(2×)

e e

b(3×)

AE

A1

c

Q

L2(1)

mountingbase

Fig. 18. Package outline TO-220AB (SOT78)

Page 12: PSMN1R1-30PL - Nexperia...PSMN1R1-30PL N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in TO-220

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Nexperia PSMN1R1-30PLN-channel 30 V 1.3 mΩ logic level MOSFET in TO-220

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Product data sheet 2 April 2014 12 / 14

12. Legal information

12.1 Data sheet statusDocumentstatus [1][2]

Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] datasheet

Qualification This document contains data from thepreliminary specification.

Product[short] datasheet

Production This document contains the productspecification.

[1] Please consult the most recently issued document before initiating orcompleting a design.

[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.nexperia.com.

12.2 DefinitionsPreview — The document is a preview version only. The document is stillsubject to formal approval, which may result in modifications or additions.Nexperia does not give any representations or warranties as tothe accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. Nexperia does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequencesof use of such information.

Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local Nexperiasales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed betweenNexperia and its customer, unless Nexperia andcustomer have explicitly agreed otherwise in writing. In no event however,shall an agreement be valid in which the Nexperia productis deemed to offer functions and qualities beyond those described in theProduct data sheet.

12.3 DisclaimersLimited warranty and liability — Information in this document is believedto be accurate and reliable. However, Nexperia does not giveany representations or warranties, expressed or implied, as to the accuracyor completeness of such information and shall have no liability for theconsequences of use of such information. Nexperia takes noresponsibility for the content in this document if provided by an informationsource outside of Nexperia.

In no event shall Nexperia be liable for any indirect, incidental,punitive, special or consequential damages (including - without limitation -lost profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.

Notwithstanding any damages that customer might incur for any reasonwhatsoever, Nexperia’s aggregate and cumulative liability towardscustomer for the products described herein shall be limited in accordancewith the Terms and conditions of commercial sale of Nexperia.

Right to make changes — Nexperia reserves the right tomake changes to information published in this document, including withoutlimitation specifications and product descriptions, at any time and withoutnotice. This document supersedes and replaces all information supplied priorto the publication hereof.

Suitability for use — Nexperia products are not designed,authorized or warranted to be suitable for use in life support, life-critical orsafety-critical systems or equipment, nor in applications where failure ormalfunction of a Nexperia product can reasonably be expectedto result in personal injury, death or severe property or environmentaldamage. Nexperia and its suppliers accept no liability forinclusion and/or use of Nexperia products in such equipment orapplications and therefore such inclusion and/or use is at the customer’s ownrisk.

Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.

Customers are responsible for the design and operation of theirapplications and products using Nexperia products, and Nexperiaaccepts no liability for any assistance with applications orcustomer product design. It is customer’s sole responsibility to determinewhether the Nexperia product is suitable and fit for thecustomer’s applications and products planned, as well as for the plannedapplication and use of customer’s third party customer(s). Customers shouldprovide appropriate design and operating safeguards to minimize the risksassociated with their applications and products.

Nexperia does not accept any liability related to any default,damage, costs or problem which is based on any weakness or defaultin the customer’s applications or products, or the application or use bycustomer’s third party customer(s). Customer is responsible for doing allnecessary testing for the customer’s applications and products using Nexperiaproducts in order to avoid a default of the applicationsand the products or of the application or use by customer’s third partycustomer(s). Nexperia does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.

Terms and conditions of commercial sale — Nexperiaproducts are sold subject to the general terms and conditions of commercialsale, as published at http://www.nexperia.com/profile/terms, unless otherwiseagreed in a valid written individual agreement. In case an individualagreement is concluded only the terms and conditions of the respectiveagreement shall apply. Nexperia hereby expressly objects toapplying the customer’s general terms and conditions with regard to thepurchase of Nexperia products by customer.

No offer to sell or license — Nothing in this document may be interpretedor construed as an offer to sell products that is open for acceptance or the

Page 13: PSMN1R1-30PL - Nexperia...PSMN1R1-30PL N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in TO-220

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Nexperia PSMN1R1-30PLN-channel 30 V 1.3 mΩ logic level MOSFET in TO-220

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Product data sheet 2 April 2014 13 / 14

grant, conveyance or implication of any license under any copyrights, patentsor other industrial or intellectual property rights.

Export control — This document as well as the item(s) described hereinmay be subject to export control regulations. Export might require a priorauthorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expresslystates that this specific Nexperia product is automotive qualified,the product is not suitable for automotive use. It is neither qualified nortested in accordance with automotive testing or application requirements.Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use inautomotive applications to automotive specifications and standards,customer (a) shall use the product without Nexperia’s warrantyof the product for such automotive applications, use and specifications, and(b) whenever customer uses the product for automotive applications beyondNexperia’s specifications such use shall be solely at customer’sown risk, and (c) customer fully indemnifies Nexperia for anyliability, damages or failed product claims resulting from customer design anduse of the product for automotive applications beyond Nexperia’sstandard warranty and Nexperia’s product specifications.

Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancybetween the translated and English versions.

12.4 TrademarksNotice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.

Page 14: PSMN1R1-30PL - Nexperia...PSMN1R1-30PL N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in TO-220

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PSMN1R1-30PL All information provided in this document is subject to legal disclaimers.

Product data sheet 2 April 2014 14 / 14

13. Contents1 General description ............................................... 12 Features and benefits ............................................13 Applications ........................................................... 14 Quick reference data ............................................. 15 Pinning information ...............................................26 Ordering information .............................................27 Marking ................................................................... 28 Limiting values .......................................................39 Thermal characteristics .........................................410 Characteristics .......................................................511 Package outline ................................................... 1112 Legal information .................................................1212.1 Data sheet status ............................................... 1212.2 Definitions ...........................................................1212.3 Disclaimers .........................................................1212.4 Trademarks ........................................................ 13

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 02 April 2014