PSMN0R9-25YLD - Nexperia · PSMN0R9-25YLD Nc1Pc6oa:KbK=Q’qKEii6oLvd56c5c6lcr Nexperia...

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PSMN0R9-25YLD N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 27 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. 2. Features and benefits 100% Avalanche tested at I (AS) = 190 A Ultra low Q G , Q GD and Q OSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C Wave solderable; exposed leads for optimal visual solder inspection 3. Applications On-board DC:DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control Power OR-ing 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V DS drain-source voltage 25 °C ≤ T j ≤ 175 °C - - 25 V I D drain current V GS = 10 V; T mb = 25 °C; Fig. 2 [1] - - 300 A

Transcript of PSMN0R9-25YLD - Nexperia · PSMN0R9-25YLD Nc1Pc6oa:KbK=Q’qKEii6oLvd56c5c6lcr Nexperia...

PSMN0R9-25YLDN-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET inLFPAK56 using NextPowerS3 Technology27 April 2016 Product data sheet

1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivershigh efficiency, low spiking performance usually associated with MOSFETS with anintegrated Schottky or Schottky-like diode but without problematic high leakage current.NextPowerS3 is particularly suited to high efficiency applications at high switchingfrequencies.

2. Features and benefits• 100% Avalanche tested at I(AS) = 190 A• Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching

frequencies• Superfast switching with soft-recovery• Low spiking and ringing for low EMI designs• Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at

25 °C• Optimised for 4.5 V gate drive• Low parasitic inductance and resistance• High reliability clip bonded and solder die attach Power SO8 package; no glue, no

wire bonds, qualified to 175 °C• Wave solderable; exposed leads for optimal visual solder inspection

3. Applications• On-board DC:DC solutions for server and telecommunications• Secondary-side synchronous rectification in telecommunication applications• Voltage regulator modules (VRM)• Point-of-Load (POL) modules• Power delivery for V-core, ASIC, DDR, GPU, VGA and system components• Brushed and brushless motor control• Power OR-ing

4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 25 V

ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] - - 300 A

© Nexperia B.V. 2017. All rights reserved

Nexperia PSMN0R9-25YLDN-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using

NextPowerS3 Technology

PSMN0R9-25YLD All information provided in this document is subject to legal disclaimers.

Product data sheet 27 April 2016 2 / 13

Symbol Parameter Conditions Min Typ Max Unit

Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 238 W

Tj junction temperature -55 - 175 °C

Static characteristics

VGS = 4.5 V; ID = 25 A; Tj = 25 °C;Fig. 10

- 0.96 1.2 mΩRDSon drain-source on-stateresistance

VGS = 10 V; ID = 25 A; Tj = 25 °C;Fig. 10

- 0.72 0.85 mΩ

Dynamic characteristics

ID = 25 A; VDS = 12 V; VGS = 10 V;Fig. 12; Fig. 13

- 89.8 - nC

ID = 25 A; VDS = 12 V; VGS = 4.5 V;Fig. 12; Fig. 13

- 41.5 - nC

QG(tot) total gate charge

ID = 0 A; VDS = 0 V; VGS = 0 V - 47.2 - nC

QGD gate-drain charge ID = 25 A; VDS = 12 V; VGS = 4.5 V;Fig. 12; Fig. 13

- 9.9 - nC

Source-drain diode

S softness factor IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;VDS = 12 V; Fig. 16

- 0.8 -

[1] 300A continuous current has been successfully demonstrated during application tests. Practically thecurrent will be limited by PCB thermal design and operating temperature.

5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 S source

2 S source

3 S source

4 G gate

mb D mounting base; connected todrain

mb

1 2 3 4

LFPAK56; Power-SO8 (SOT669)

S

D

G

mbb076

6. Ordering informationTable 3. Ordering information

PackageType number

Name Description Version

PSMN0R9-25YLD LFPAK56;Power-SO8

Plastic single-ended surface-mounted package(LFPAK56; Power-SO8); 4 leads

SOT669

© Nexperia B.V. 2017. All rights reserved

Nexperia PSMN0R9-25YLDN-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using

NextPowerS3 Technology

PSMN0R9-25YLD All information provided in this document is subject to legal disclaimers.

Product data sheet 27 April 2016 3 / 13

7. MarkingTable 4. Marking codesType number Marking code

PSMN0R9-25YLD 0D925L

8. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 25 V

VDGR drain-gate voltage 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ - 25 V

VGS gate-source voltage -20 20 V

Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 238 W

VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] - 300 AID drain current

VGS = 10 V; Tmb = 100 °C; Fig. 2 - 285 A

IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 1614 A

Tstg storage temperature -55 175 °C

Tj junction temperature -55 175 °C

Tsld(M) peak soldering temperature - 260 °C

VESD electrostatic discharge voltage HBM 2000 - V

Source-drain diode

IS source current Tmb = 25 °C - 198 A

ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 1614 A

Avalanche ruggedness

EDS(AL)S non-repetitive drain-sourceavalanche energy

ID = 25 A; Vsup ≤ 25 V; RGS = 50 Ω;VGS = 10 V; Tj(init) = 25 °C; unclamped;tp = 8.2 ms

[2] - 3343 mJ

IAS non-repetitive avalanchecurrent

Vsup ≤ 25 V; VGS = 10 V; Tj(init) = 25 °C;RGS = 50 Ω

[2] - 190 A

[1] 300A continuous current has been successfully demonstrated during application tests. Practically thecurrent will be limited by PCB thermal design and operating temperature.

[2] Protected by 100% test

© Nexperia B.V. 2017. All rights reserved

Nexperia PSMN0R9-25YLDN-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using

NextPowerS3 Technology

PSMN0R9-25YLD All information provided in this document is subject to legal disclaimers.

Product data sheet 27 April 2016 4 / 13

Tmb (°C)0 20015050 100

03aa16

40

80

120

Pder(%)

0

Fig. 1. Normalized total power dissipation as afunction of mounting base temperature

aaa-022466

0 25 50 75 100 125 150 175 2000

100

200

300

400

500

Tmb (°C)

ID(A)

(1)(1)

VGS ≥ 10 V(1) 300A continuous current has been successfullydemonstrated during application tests. Practicallythe current will be limited by PCB thermal designand operating temperature.

Fig. 2. Continuous drain current as a function ofmounting base temperature

aaa-022467

10-1 1 10 10210-1

1

10

102

103

104

VDS (V)

ID(A)

DCDC

100 ms100 ms10 ms10 ms

1 ms1 ms

100 us100 us

tp = 10 ustp = 10 us

Limit RDSon = VDS / IDLimit RDSon = VDS / ID

Tmb = 25 °C; IDM is a single pulse

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

9. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistancefrom junction tomounting base

Fig. 4 - 0.56 0.63 K/W

© Nexperia B.V. 2017. All rights reserved

Nexperia PSMN0R9-25YLDN-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using

NextPowerS3 Technology

PSMN0R9-25YLD All information provided in this document is subject to legal disclaimers.

Product data sheet 27 April 2016 5 / 13

Symbol Parameter Conditions Min Typ Max Unit

Fig. 5 - 50 - K/WRth(j-a) thermal resistancefrom junction toambient

Fig. 6 - 125 - K/W

aaa-020587

10-6 10-5 10-4 10-3 10-2 10-1 110-3

10-2

10-1

1

tp (s)

Zth(j-mb)(K/W)

single shotsingle shot

δ = 0.5δ = 0.5

0.20.2

0.10.1

0.050.05

0.020.02P

ttpT

tpδ = T

Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

aaa-005750

Fig. 5. PCB layout for thermal resistance junction toambient 1” square pad; FR4 Board; 2oz copper

aaa-005751

Fig. 6. PCB layout for thermal resistance junction toambient minimum footprint; FR4 Board; 2ozcopper

10. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

Static characteristics

ID = 250 µA; VGS = 0 V; Tj = 25 °C 25 - - VV(BR)DSS drain-sourcebreakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 22.5 - - V

VGS(th) gate-source thresholdvoltage

ID = 1 mA; VDS=VGS; Tj = 25 °C 1.2 1.73 2.2 V

© Nexperia B.V. 2017. All rights reserved

Nexperia PSMN0R9-25YLDN-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using

NextPowerS3 Technology

PSMN0R9-25YLD All information provided in this document is subject to legal disclaimers.

Product data sheet 27 April 2016 6 / 13

Symbol Parameter Conditions Min Typ Max Unit

ΔVGS(th)/ΔT gate-source thresholdvoltage variation withtemperature

25 °C ≤ Tj ≤ 175 °C - -5.1 - mV/K

VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µAIDSS drain leakage current

VDS = 20 V; VGS = 0 V; Tj = 125 °C - 30 - µA

VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nAIGSS gate leakage current

VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 100 nA

VGS = 4.5 V; ID = 25 A; Tj = 25 °C;Fig. 10

- 0.96 1.2 mΩ

VGS = 4.5 V; ID = 25 A; Tj = 175 °C;Fig. 10; Fig. 11

- - 2.04 mΩ

VGS = 10 V; ID = 25 A; Tj = 25 °C;Fig. 10

- 0.72 0.85 mΩ

RDSon drain-source on-stateresistance

VGS = 10 V; ID = 25 A; Tj = 175 °C;Fig. 10; Fig. 11

- - 1.45 mΩ

RG gate resistance f = 1 MHz - 1.16 - Ω

Dynamic characteristics

ID = 25 A; VDS = 12 V; VGS = 10 V;Fig. 12; Fig. 13

- 89.8 - nC

ID = 25 A; VDS = 12 V; VGS = 4.5 V;Fig. 12; Fig. 13

- 41.5 - nC

QG(tot) total gate charge

ID = 0 A; VDS = 0 V; VGS = 0 V - 47.2 - nC

QGS gate-source charge - 15.8 - nC

QGS(th) pre-threshold gate-source charge

- 9.7 - nC

QGS(th-pl) post-threshold gate-source charge

- 6.1 - nC

QGD gate-drain charge

ID = 25 A; VDS = 12 V; VGS = 4.5 V;Fig. 12; Fig. 13

- 9.9 - nC

VGS(pl) gate-source plateauvoltage

ID = 25 A; VDS = 12 V; Fig. 12; Fig. 13 - 2.7 - V

Ciss input capacitance - 6721 - pF

Coss output capacitance - 2390 - pF

Crss reverse transfercapacitance

VDS = 12 V; VGS = 0 V; f = 1 MHz;Tj = 25 °C; Fig. 14

- 418 - pF

td(on) turn-on delay time - 37.9 - ns

tr rise time - 42 - ns

td(off) turn-off delay time - 39.2 - ns

tf fall time

VDS = 12 V; RL = 0.6 Ω; VGS = 4.5 V;RG(ext) = 5 Ω

- 27.9 - ns

Qoss output charge VGS = 0 V; VDS = 12 V; f = 1 MHz - 44 - nC

© Nexperia B.V. 2017. All rights reserved

Nexperia PSMN0R9-25YLDN-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using

NextPowerS3 Technology

PSMN0R9-25YLD All information provided in this document is subject to legal disclaimers.

Product data sheet 27 April 2016 7 / 13

Symbol Parameter Conditions Min Typ Max Unit

Source-drain diode

VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 15 - 0.78 1.2 V

trr reverse recovery time - 44 - ns

Qr recovered charge [1] - 54.4 - nC

ta reverse recovery risetime

- 24.2 - ns

tb reverse recovery falltime

- 19.8 - ns

S softness factor

IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;VDS = 12 V; Fig. 16

- 0.8 -

[1] includes capacitive recovery

aaa-022468

0 1 2 3 40

50

100

150

200

VDS (V)

ID(A)

2.6 V2.6 V

2.8 V2.8 V

VGS = 3 VVGS = 3 V

3.5 V3.5 V4.5 V4.5 V

10 V10 V

Tj = 25 °C

Fig. 7. Output characteristics; drain current as afunction of drain-source voltage; typical values

aaa-022469

0 2 4 6 8 10 12 14 160

5

10

15

20

VGS (V)

RDSon(mΩ)

Tj = 25 °C; ID = 25 A

Fig. 8. Drain-source on-state resistance as a functionof gate-source voltage; typical values

© Nexperia B.V. 2017. All rights reserved

Nexperia PSMN0R9-25YLDN-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using

NextPowerS3 Technology

PSMN0R9-25YLD All information provided in this document is subject to legal disclaimers.

Product data sheet 27 April 2016 8 / 13

aaa-022470

0 0.5 1 1.5 2 2.5 3 3.5 40

50

100

150

200

VGS (V)

ID(A)

Tj = 25°CTj = 25°C175°C175°C

VDS = 12 V

Fig. 9. Transfer characteristics; drain current as afunction of gate-source voltage; typical values

aaa-022471

0 20 40 60 800

2

4

6

8

10

ID (A)

RDSon(mΩ) 2.8 V2.8 V

3 V3 V

3.5 V3.5 V

4.5 V4.5 VVGS = 10 VVGS = 10 V

Tj = 25 °C

Fig. 10. Drain-source on-state resistance as a functionof drain current; typical values

aaa-021697

-60 -30 0 30 60 90 120 150 1800

0.4

0.8

1.2

1.6

2

Tj (°C)

a

10 V10 V

VGS = 4.5 VVGS = 4.5 V

Fig. 11. Normalized drain-source on-state resistancefactor as a function of junction temperature

aaa-022473

0 20 40 60 80 1000

2

4

6

8

10

QG (nC)

VGS(V)

12 V12 V

VDS = 5 VVDS = 5 V

20 V20 V

Tj = 25 °C; ID = 25 A

Fig. 12. Gate-source voltage as a function of gatecharge; typical values

© Nexperia B.V. 2017. All rights reserved

Nexperia PSMN0R9-25YLDN-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using

NextPowerS3 Technology

PSMN0R9-25YLD All information provided in this document is subject to legal disclaimers.

Product data sheet 27 April 2016 9 / 13

003aaa508

VGS

VGS(th)

QGS1

QGS2

QGD

VDS

QG(tot)

ID

QGS

VGS(pl)

Fig. 13. Gate charge waveform definitions

aaa-022474

10-1 1 10 10210

102

103

104

VDS (V)

C(pF)

CissCiss

CossCoss

CrssCrss

VGS = 0 V; f = 1 MHz

Fig. 14. Input, output and reverse transfer capacitancesas a function of drain-source voltage; typicalvalues

aaa-022475

0 0.2 0.4 0.6 0.8 1 1.210-1

1

10

102

103

VSD (V)

IS(A)

Tj = 25°CTj = 25°C175°C175°C

VGS = 0 V

Fig. 15. Source-drain (diode forward) current as afunction of source-drain (diode forward)voltage; typical values

003aal160

0

t (s)

ID(A)

IRM

0.25 IRM

ta tb

trr

Fig. 16. Reverse recovery timing definition

© Nexperia B.V. 2017. All rights reserved

Nexperia PSMN0R9-25YLDN-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using

NextPowerS3 Technology

PSMN0R9-25YLD All information provided in this document is subject to legal disclaimers.

Product data sheet 27 April 2016 10 / 13

11. Package outline

ReferencesOutlineversion

Europeanprojection Issue date

IEC JEDEC JEITA

SOT669 MO-235

sot669_po

11-03-2513-02-27

Unit(1)

mmmaxnommin

1.20

1.01

0.15

0.000.25

0.50

0.35

4.41

3.62

2.2

2.0

6.2

5.8

0.85

0.40

A

Dimensions (mm are the original dimensions)

Note1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669

A1 A2

1.10

0.95

A3 b b2 b3

0.1

L2 w y

θ

b4 c c2 D(1) D1(1) E(1) E1(1)

3.3

3.1

e

1.27

H L

0.25

0.19

0.30

0.24

4.20 1.3

0.80.25

0.9

0.7

4.10

3.80

5.0

4.8

1.3

0.8

L1

A C

1/2 e

w A

0 5 mm

scale

e

E1

b

c2

A2

1 2 3 4

mountingbase

D1

c

E

b2

b3

b4

H D

L2

L1

C

X

y C

q

(A3)

L

A

A1

detail X

Fig. 17. Package outline LFPAK56; Power-SO8 (SOT669)

© Nexperia B.V. 2017. All rights reserved

Nexperia PSMN0R9-25YLDN-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using

NextPowerS3 Technology

PSMN0R9-25YLD All information provided in this document is subject to legal disclaimers.

Product data sheet 27 April 2016 11 / 13

12. Legal information

12.1 Data sheet statusDocumentstatus [1][2]

Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] datasheet

Qualification This document contains data from thepreliminary specification.

Product[short] datasheet

Production This document contains the productspecification.

[1] Please consult the most recently issued document before initiating orcompleting a design.

[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.nexperia.com.

12.2 DefinitionsPreview — The document is a preview version only. The document is stillsubject to formal approval, which may result in modifications or additions.Nexperia does not give any representations or warranties as tothe accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. Nexperia does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequencesof use of such information.

Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local Nexperiasales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed betweenNexperia and its customer, unless Nexperia andcustomer have explicitly agreed otherwise in writing. In no event however,shall an agreement be valid in which the Nexperia productis deemed to offer functions and qualities beyond those described in theProduct data sheet.

12.3 DisclaimersLimited warranty and liability — Information in this document is believedto be accurate and reliable. However, Nexperia does not giveany representations or warranties, expressed or implied, as to the accuracyor completeness of such information and shall have no liability for theconsequences of use of such information. Nexperia takes noresponsibility for the content in this document if provided by an informationsource outside of Nexperia.

In no event shall Nexperia be liable for any indirect, incidental,punitive, special or consequential damages (including - without limitation -lost profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.

Notwithstanding any damages that customer might incur for any reasonwhatsoever, Nexperia’s aggregate and cumulative liability towardscustomer for the products described herein shall be limited in accordancewith the Terms and conditions of commercial sale of Nexperia.

Right to make changes — Nexperia reserves the right tomake changes to information published in this document, including withoutlimitation specifications and product descriptions, at any time and withoutnotice. This document supersedes and replaces all information supplied priorto the publication hereof.

Suitability for use — Nexperia products are not designed,authorized or warranted to be suitable for use in life support, life-critical orsafety-critical systems or equipment, nor in applications where failure ormalfunction of a Nexperia product can reasonably be expectedto result in personal injury, death or severe property or environmentaldamage. Nexperia and its suppliers accept no liability forinclusion and/or use of Nexperia products in such equipment orapplications and therefore such inclusion and/or use is at the customer’s ownrisk.

Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.

Customers are responsible for the design and operation of theirapplications and products using Nexperia products, and Nexperiaaccepts no liability for any assistance with applications orcustomer product design. It is customer’s sole responsibility to determinewhether the Nexperia product is suitable and fit for thecustomer’s applications and products planned, as well as for the plannedapplication and use of customer’s third party customer(s). Customers shouldprovide appropriate design and operating safeguards to minimize the risksassociated with their applications and products.

Nexperia does not accept any liability related to any default,damage, costs or problem which is based on any weakness or defaultin the customer’s applications or products, or the application or use bycustomer’s third party customer(s). Customer is responsible for doing allnecessary testing for the customer’s applications and products using Nexperiaproducts in order to avoid a default of the applicationsand the products or of the application or use by customer’s third partycustomer(s). Nexperia does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.

Terms and conditions of commercial sale — Nexperiaproducts are sold subject to the general terms and conditions of commercialsale, as published at http://www.nexperia.com/profile/terms, unless otherwiseagreed in a valid written individual agreement. In case an individualagreement is concluded only the terms and conditions of the respectiveagreement shall apply. Nexperia hereby expressly objects toapplying the customer’s general terms and conditions with regard to thepurchase of Nexperia products by customer.

No offer to sell or license — Nothing in this document may be interpretedor construed as an offer to sell products that is open for acceptance or the

© Nexperia B.V. 2017. All rights reserved

Nexperia PSMN0R9-25YLDN-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using

NextPowerS3 Technology

PSMN0R9-25YLD All information provided in this document is subject to legal disclaimers.

Product data sheet 27 April 2016 12 / 13

grant, conveyance or implication of any license under any copyrights, patentsor other industrial or intellectual property rights.

Export control — This document as well as the item(s) described hereinmay be subject to export control regulations. Export might require a priorauthorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expresslystates that this specific Nexperia product is automotive qualified,the product is not suitable for automotive use. It is neither qualified nortested in accordance with automotive testing or application requirements.Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use inautomotive applications to automotive specifications and standards,customer (a) shall use the product without Nexperia’s warrantyof the product for such automotive applications, use and specifications, and(b) whenever customer uses the product for automotive applications beyondNexperia’s specifications such use shall be solely at customer’sown risk, and (c) customer fully indemnifies Nexperia for anyliability, damages or failed product claims resulting from customer design anduse of the product for automotive applications beyond Nexperia’sstandard warranty and Nexperia’s product specifications.

Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancybetween the translated and English versions.

12.4 TrademarksNotice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.

© Nexperia B.V. 2017. All rights reserved

Nexperia PSMN0R9-25YLDN-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using

NextPowerS3 Technology

PSMN0R9-25YLD All information provided in this document is subject to legal disclaimers.

Product data sheet 27 April 2016 13 / 13

13. Contents1 General description ............................................... 12 Features and benefits ............................................13 Applications ........................................................... 14 Quick reference data ............................................. 15 Pinning information ...............................................26 Ordering information .............................................27 Marking ................................................................... 38 Limiting values .......................................................39 Thermal characteristics .........................................410 Characteristics .......................................................511 Package outline ................................................... 1012 Legal information .................................................1112.1 Data sheet status ............................................... 1112.2 Definitions ...........................................................1112.3 Disclaimers .........................................................1112.4 Trademarks ........................................................ 12

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 27 April 2016