Presentation on ADS Momentum

5/21/2018 Presentation on ADS Momentum

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resentaton on omentum


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Keefe Bohannan

Agilent EEsof Applications Engineer

April 2003

ADS Momentum

A Half-Day Seminar


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Momentum Seminar

Agenda for Half-day Momentum Seminar

30 minutes Brief overview of Getting Started with Momentum

Creating/importing artwork in ADS Layout Momentum versus Momentum RF

Creating substrate stack-ups and mapping layout layers as metallization laye Placing and defining ports Defining mesh parameters

30 minutes Overview of Viewing and Using Momentum Results

Momentum Datasets Momentum Visualization: currents, fields, s-parameters, gamma, Z0 ADS Data Display: s-, y-, and z-parameters, reactance (L/C), Q, etc.

60 minutes Advanced Topics [Part 1]

Momentum Co-simulation (EM/circuit co-simulation) using Layout Component Momentum Co-optimization (EM/circuit co-optimization) using Layout Compon Thick conductor simulations {LAB} Spiral Inductor simulations {LAB}

15 minutes Break


Advanced Model Composer (AMC) Advanced Model Composer (AMC) {LAB}

15 minutes Final Q&A Session

4 hours 15 minutes


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Momentum Seminar

What is meant by Planar EM simulation ?

Substrate - multiple dielectrics

Metals - traces on different layers forming component aninterconnect

Vias - connecting different layers

Method of Moments techniqueSometimes referred to as 2.5D

It does NOT include:

Arbitrary 3D structures

Horn Antennas


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Momentum Seminar

Why are Planar EM Simulators used ?

No simple analytical model exists

Coupling between conductors or layers is significant

Arbitrary planar geometry

Narrow frequency response not captured by analytical mo

Radiation patterns of planar antennas

CPW transmission lines

When full 3D analysis would take too long


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Momentum Seminar

How are Planar EM Simulators used ?

Layout driven

Created entirely within layout,

Schematic-to-Layout translation, OR

Import (DXF, GDSII, etc.)

Momentum interface within ADS Layout

Mode > Substrate/Metallization > Port > Mesh Simulation > Component > Optimization

Outputs

S-parameters

Current visualization


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Momentum Seminar

Creating/importing artwork in LayoutCreate

Schem

Import


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Momentum Seminar

Create

Schem

Import

Everything is placed on a layer

There are 39 default layers

User may add new layers, remomodify layer names and propert

User may define name, color, p

(outlined/filled), and line style a Layers may be set to be visible/

selectable/unselectable, and ins

Items on unselected layersedited / moved / deleted

Only one layer is insertab

Objects can only be cTO the insertable (moved FROM any se

Creating/importing artwork in Layout


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Momentum Seminar

Create

Schem

Import

Preferences which apply to things not yet placed:

Trace, Placement, Entry/Edit, Units/Scale,Component Text, Text

Preferences which apply to things already placed:

Select, Grid/Snap, Pin/Tee, Display, Layoutunits

Preferences for schemaseparately

Preferences Setting are

layout.prf and schemat

Preferences files from Options > Preferences



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Momentum Seminar

Create

Schem

Import



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Momentum Seminar

Create

Schem

Import



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Momentum Seminar

Create

Schem

Import



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Momentum Seminar

Create

Schem

Import



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Momentum Seminar

Create

Schem

Import


Simplify

using

(flattens

m


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Momentum Seminar

How are Planar EM Simulators used ?

Layout driven

Created entirely within layout,

Schematic-to-Layout translation, OR

Import (DXF, GDSII, etc.)

Momentum interface within ADS Layout

Mode > Substrate/Metallization > Port > Mesh Simulation > Component > Optimization

Outputs

S-parameters

Current visualization


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Agilent EEsof EDA

eta e resentaton on omentum - art o


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Momentum Seminar

Using Momentum

Enable regular Momentum or Momentum RF

Define Substrate and Metallization (pre-comput

Modify the type and impedance of ports

Describe a possible Substrate enclosure

Create/modify Momentum Component to be use

or co-optimization

Define Mesh parameters (pre-compute option)

Setup and Perform a Momentum simulation (pla

Setup and Perform a Momentum optimization (g

Display Visualization (S-parameters, current de

parameters) and Radiation patternsExport 3D files for HFSS


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Momentum Seminar

Using Momentum: Selecting the Analysis

Solution process

Select Mode

Substrate definition

Port Setup

Mesh Generation

Planar Solve

Display Results

Click this submenu to Momentum

MomentumR


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Momentum Seminar

Momentum versus MomentumRF: A Snap

Momentum features:

Full-Wave EM Simulation

Rooftop Basis Function

Rectangular and Triangular Cells

For most passive geometry

Full accuracy for all circuit sizes

No inherent upper frequency limit

Potential instability at f


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Momentum Seminar

Status window provides rule of thumb frequency

for which the structure is electrically small

How do I know?

Momentum versus MomentumRFElectrically Small condition for Momentum RF

D


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Momentum Seminar

Momentum versus MomentumRFPlanar EM Simulation Basics

Physical Design

Substrate

Metallization

Ports

Method of Moments

Meshing

Rooftop functions

B1(r) B2(r)

I1 I2

/10J(r) = I1B1(r) + I2B2(r)Heywhere did

this equation

come from?


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Momentum Seminar

If one then transforms these equations to the integral form, the mixed potential integral e

form as a linear integral operator equation follows:

Here, J(r) represents the unknown surface currents and E(r) the known excitation of the proble

layered medium acts as the integral kernel. The unknown surface currents are discretized by m

metallization patterns and applying an expansion in a finite number of subsectional basis functio

Maxwells Equations

E= -B/t Faradays LawH= J+ D/t Amperes LawD= Gausss LawB= 0 No Name (Gausss Law for Magnetism)

where

E= Electric Field Intensity Vector

H= Magnetic Field Intensity Vector

D= Electric Flux Density (Electric Displacement Vector)

B= Magnetic Flux Density Vector

Ohhhhsorry I

asked.


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Momentum Seminar

Momentum versus MomentumRFPlanar EM Simulation Basics

B1(r) B

I1 I2

I1 I2

C11

C12

L11 L2

L13L12

R22

/10

Method of Moments

Maxwells Equations

Matrix Equation

Equivalent Circuit

[Z].[I]=[V]

[Z] = [R] + j[L] + 1/j[C]-1


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Momentum Seminar

Momentum versus MomentumRFFullwave versus Quasi-Static: Fullwave

Fullwave electric & magnet

Includes space and surface

[L(w)] & [C(w)] are complex

[Z(w)] matrix reload CPU in

jkRR

e1Fullwave EM

Maxwells Equations

Matrix Equation

Equivalent Circuit

[Z].[I]=[V]

[Z] = [R] + j[L()] + 1/j[C()]-1

[S]


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Momentum Seminar

Momentum versus MomentumRFFullwave versus Quasi-Static: Quasi-Static

Electro- and magneto-st

Near field / low freq ap

L(w) = L0+ L1wR + L2(

C(w) = C0+ C1wR + C

Neglects far field radia

[L0] & [C0] are real and

[Z0] matrix reload very

1 e jkRRQuasi-Static EM

Maxwells Equations

Matrix Equation

Equivalent Circuit

[Zo].[I]=[V]

[Zo] = [R] + j[Lo] + 1/j[Co]-1

[S]


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Momentum Seminar

Momentum versus MomentumRFA Summary of Effects Included

quasi-static inductance . . . . . .

quasi-static capacitance . . . . .

DC conductor loss (s) . . . . . . . .

DC substrate loss (s) . . . . . . . .

dielectric loss (tan d) . . . . . . . . . . . . . . . . . . . . . . . . . . .

skin effect loss . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

substrate wave radiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

space wave radiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Layout

S parameters

RF

Spice model S p

Spice Momentum RF MomentumDC


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Momentum Seminar

Using Momentum: Creating Substrate Sta

Mapping Layout Layers as Metallization L

Solution process

Select Mode


Port Setup

Mesh Generation

Planar Solve

Display Results


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Momentum Seminar



Once you have created or imported your artwork


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Momentum Seminar



be sure to define (or open) your substrate stack-up and map t


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Momentum Seminar



Greens Function Substrate Calculation Time

Students Guide A-36


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Momentum Seminar



A note on layout layer conductivity

Conductivity defi

Perfe

(Rea

(Rea

Imped

The parameters s

toward a conduc

does NOT affect


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Momentum Seminar

Momentum treats all conductors as having zero thickness. However, the conductivity and thickness c

frequency dependent losses in the metallization patterns.

Momentum uses a complex surface impedance for all metals that is a function of conductor thickness

At low frequencies, current flow will be approximately uniformly distributed across the thicknes

this minimum resistance and an appropriate internal inductance to form the complex surface imp

At high frequencies, the current flow is dominantly on the outside of the conductor and Moment

impedance that closely approximates this skin effect.

At intermediate frequencies, where metal thickness is between approximately two and ten skin

transitions between those two limiting behaviors.

This surface impedance

is added to the Method of Moments approach that is used for

Momentum in g

The formula used is a combination of a high-frequency conductivity and a low-frequency bulk resistivi

approaches (LF bulk behaviorHF surface impedance) transition seamlessly.

The formula is:

Z = coth() * Zcwhere Zc = the HF impedance and coth() is the correction for finite thickness

Zc = 0.5 * sqrt(j * 0 * /(+ j * 0* ))

= 0.5 * thickness * sqrt(j * 0 * * (+ j * 0* ))where = 2 * * fand = conductivity = 1/resistivity [in Siemens/meter]

The meshing density can affect the simulated behavior of a structure. A more dense mesh allows curr

and can slightly increase the loss. This is because a more uniform distribution of current for a low den

resistance

Using Momentum: Creating Substrate Stack-ups

Layout Layers as Metallization Layers:Loss Model u


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Momentum Seminar

Using Momentum

Solution process

Select Mode


Port Setup

Mesh Generation

Planar Solve

Display Results


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Momentum Seminar

Placing and Defining PortsConsiderations

Keep the following points in mind when adding ports to circuits to be simulated

The components or shapes that ports are connected to must be on layout laymetallization layers that are defined as strips or slots. Ports cannot be direct

Make sure that ports on edges are positioned so that the arrow is outside of inwards, and at a straight angle.

Make sure that the port and the object you are connecting it to are on the saconvenience, you can set the entry layer to this layer; the Entry Layer listbobar.

A port must be applied to an object. If a port is applied in open space so thaobject, Momentum will automatically snap the port to the edge of the closes

apparent from the layout, however, because the position of the port will not If the Layout resolution is changed afteradding ports that are snapped to ed

the ports and add them again. The resolution change makes it unclear to whsnapped, causing errors in mesh calculations.

Note Do not use the ground port component (Component > Ground) in circusimulated using Momentum. Either add ground planes to the substrate or use

ports.

(Ground port component toolbar button: )


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Momentum Seminar

Port Type

Single

(default)

Internal

Differential

Coplanar

Common Mode

Ground Ref.

General Description

Calibrated to remove mismatch at port

boundary (might also call this a

transmission line port)

Not calibrated (might also call this a

direct excitation port)

Two ports with opposite polarity

Two ports with opposite polarity

Two ports with the same polarity

An explicit ground reference for aSingle or Internal port.

Place

Ed

Edg

Sur

Ed

Ed

Ed

EdgSur

CPW NOTE: For finite ground planes, use Ground Reference ports and Interna

Placing and Defining PortsDescription of Momentum Port Types


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Momentum Seminar

It is connected to an object that is on either a strip or slot metallization laye It can be applied only to the edge of an object. The port is external and calibrated. The port is excited using a calibration p

removes any undesired reactive effects of the port excitations (mode mismaboundary. This is performed by extending the port boundary with a half-wavcalibration (transmission) line. The frequency wavelength selected during thsimulation process is used to calculate the length of the calibration line. Forabout the calibration process, refer to "Calibration and De-embedding of theon page A-7in the Momentum manual.

The port boundary can be moved into or away from the geometry by specif

offset. S-parameters will be calculated as if the port were at this position. When two or more single ports are on the same reference plane, coupling eparasitics affects the S-parameters. The calibration process groups the portcoupling in the calibration arms is included in the S-parameter solution.

If the port is connected to an object on a strip layer, the substrate definitionleast one infinite metal layer: a top cover, ground plane, or a slot layer, or areference must be used in addition to the port.

If the port is connected to an object that is on a slot layer, the port has pola

Tip It is not necessary to open the Port Editor dialog box to assign this portwithout a port type specified is assumed to be a single port.

Placing and Defining PortsSingle Port Properties


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Momentum Seminar

Placing and Defining PortsDefining a Single Port

Choose Momentum > Port Editor.

Select the port that you want to assign this type to.

In the Port Editor dialog box, under Port Type, select Single.

Enter the components of the port impedance in the Real and Iand specify the units.

You can shift the port boundary, also referred to as the port reShifting the boundary enables a type of de-embedding procesadds or subtracts electrical length from the circuit, based on thimpedance and propagation characteristic of the port. Enter thReference Offset field, and select the units. A positive value mboundary into the circuit, a negative value moves the port bouthe circuit.

Click Applyto add the definition to the port.


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Momentum Seminar

Placing and Defining PortsSingle Port: Avoiding Overlap (of calibration arm)

Be aware that when using single ports, the calibration arm applied tlong enough to overlap another element in the circuit. In this case, changed to an internal port type, and no calibration will be performeoccurs, a message will be displayed during simulation in the Status the change.


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Momentum Seminar

Placing and Defining PortsSingle Port: Applying Reference Offsets

Reference offsets enable you to reposition single port types in a layout and thereby adjust electrical

changing the actual drawing. S-parameters are returned as if the ports were placed at the position o

Why Use Reference Offsets?The need to adjust the position of ports in a layout is analogous to the need to eliminate the effect ohardware prototypes. When hardware prototypes are measured, probes are connected to the input Under Test (DUT). These probes feed energy to the DUT, and measure the response of the circuit. Uresponse characterizes the entiresetup, that is, the DUT plus the probes. This is an unwanted effectreflect the characteristics of the DUT alone. The characteristics of the probes are well known, so me

mathematically eliminate the effects of the probes, and present the correct measurements of the DUThere are significant resemblances between this hardware measurement process and the way MomeMomentum, the probes are replaced by ports, which, during simulation, will feed energy to the circuMomentum port feeding scheme also has its own, unwanted effect: low-order mode mismatch at theeliminated by the calibration process. However, in order for this calibration process to work well, it imode is characterized accurately. This can only be accomplished when the distance between the pordiscontinuity is sufficiently large, that is, there exists a feedline that is long enough to provide this d


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Momentum Seminar

Placing and Defining PortsSingle Port: Allowing for Coupling Effects

If you have two or more single ports that lie on the same reference plane, the catake into account the coupling caused by parasitics that naturally occurs betweenyields simulation results that more accurately reflect the behavior of an actual cirThe figure below helps illustrate which ports will be grouped in order for the calibaccount for coupling among the ports. In this setup, only the first two ports will bthird port is an internal port type and the fourth port is on a different reference pthough the second port has a reference offset assigned to it, for this process theyon the same plane and their reference offsets will be made equal.If you do not want the ports to be grouped, you must add a small thickness of mobject that one of the ports is connected to. The ports will no longer be on the sa

be considered part of the same group.


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Momentum Seminar

Placing and Defining PortsInternal Port Properties

Internal ports enable you to apply a port to the surface of an object in your desports, all of the physical connections in a circuit can be represented, so your simaccount all of the EM coupling effects that will occur among ports in the circuit.caused by parasitics are included in your simulation results because internal po

You should avoid geometries that allow coupling between single and internal poparameters.

An example of where an internal port is useful is to simulate a bond wire on theAnother example of where an internal port is necessary is a circuit that consistsconnect to a device, such as a transistor or a chip capacitor, but this device is nyou are simulating. An internal port can be placed at the connection point, so enot part of the circuit you are simulating, the coupling effects that occur amongdevice will be included in your simulation.

Internal ports are often used in conjunction with ground references.


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Momentum Seminar

Placing and Defining PortsInternal Port Properties

It can be applied to the interior of a circuit by applying it to the s It can be applied to the edge of an object. It can be applied to objects that are on strip layers only. The orientation of the port is not considered if it is on the surface

description of port orientation, refer to "Adding a Port to a Layoutthe Momentum manual.)

No calibration is performed on the port. Because no calibration is port, the results will not be as accurate as with a single port. How

difference in accuracy is small.


Select the port that you want to assign this type to.

Click Apply.

Defining an Internal Port


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Momentum Seminar

Placing and Defining PortsIllustration of Internal Port Excitation: Direct Point Fee

direct excitation point feed


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Momentum Seminar

direct excitation

line feed

Placing and Defining PortsIllustration of Internal Port Excitation: Direct Line/Edge


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Momentum Seminar

Placing and Defining PortsDifferential Port Properties

Differential ports should be used in situations where an electric field between two ports (odd modes propagate). This can occur when: The two ports are close together There is no ground plane in the circuit or the ground plane is relati One port behaves (to a degree) like a ground to the other port, an

ports is developed. The ports are connected to objects that are on strip metallization la The electric field that builds up between the two ports will have an

that should be taken into account during a simulation. To do this, u

Differential ports have the following properties: They can be applied to objects on strip layers only. They are assigned in pairs, and each pair is assigned a single port Each of the two ports is excited with the same absolute potential, b

polarity. The voltages are opposite (180 degrees out of phase). Theopposite in direction when the ports are on two symmetrical lines, direction is approximated for other configurations.

The two ports must be on the same reference plane.


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Momentum Seminar

Placing and Defining PortsDifferential Port Numbering

Note: Port numbers for differential ports are treated in the following manner: on thto see the port numbers (instance names) that were assigned to each port when thlayout. Use the Momentum Port Editor dialog box to identify which pair of ports willport.

When Momentum simulates designs containing non-consecutive port numbers, the consecutive numbers in the resulting data file. The lowest port number is remappednumbers are remapped in consecutive order. The port numbers are not changed inmessage in the Status window announces the change, and lists the mappings.

For example, if you are simulating a design with ports numbered 1 and 3, the followinforms you of the changes:

Layout has non-consecutive port numbers.

Output files will have consecutive port numbers.

layout port -> output port1 -> 1

3 -> 2

Also, when you view results, you will see S-parameters for the differential port numabove, the layout would show p1, p2, p3, p4. The S-parameter results will be for coP1 and P3 only.


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Momentum Seminar

Placing and Defining PortsDefining a Differential Port

Choose Momentum > Port Editor. Select the port that you want to assign this type

to. Note the port number. In the Port Editor dialog box, under Port Type,

select Differential. Under Polarity, make sure that Normalis

selected. Click Apply. Select the second port. In the Port Editor dialog box, under Port Type,

select Differential. Under Polarity, select Reversed. Under Associate with port number, enter the

number of the previously-selected port.

Click Apply. Repeat these steps for other differential port pairs

in the circuit. Click OKto dismiss the dialog box.


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Momentum Seminar

direct excitationn

line feed

line feed

ground reference

1.i

-1.i

Students Guide A-32

Placing and Defining PortsIllustration of Differential Port Excitation: Direct Point


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Momentum Seminar

Placing and Defining PortsCoplanar Port Properties

This type of port is used specifically for coplanar waveguide (CPW) cito a differential port, but coplanar ports are applied to objects on slowhere slots are used in the design). Coplanar ports should be used inan electric field is likely to build up between two ports. This can occu The two ports are close together Polarity between the ports develops The ports are connected to objects that are on slot metallization la The electric field that builds up between the two ports will have an

circuit that should be taken into account during a simulation. To dcoplanar ports.

Coplanar ports have the following properties: They can be applied to objects on slot layers only. They are assigned in pairs. Each of the two ports is excited with the same absolute potential,

opposite polarity. The voltages are opposite (180 degrees out of pcurrents are equal but opposite in direction when the ports are on

lines, and the current direction is approximated for other configura The two ports must be on the same reference plane.


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Momentum Seminar

Placing and Defining PortsCoplanar Port Polarity

Note: Poare treatewhich diff

Be careful when assigning polarity to coplanar ports.

An incorrect choice of polarity can change the phase oftransmission type S-parameters by 180 degrees.

To verify polarity, zoom in on a coplanar port. You willnotice two sets of arrows applied to the port. Oneappears when you add the port component to thecircuit. The second will appear after the mesh iscomputed. It indicates the direction of the voltage overthe slot.


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Momentum Seminar

Placing and Defining PortsDefining a Coplanar Port

Note Coplanar ports can be applied to objects on slot l

Choose Momentum > Port Editor. Select the port that you want to assign this type to. N

number. In the Port Editor dialog box, under Port Type, select

Under Polarity, make sure that Normalis selected. Click Apply. Select the second port. In the Port Editor dialog box, under Port Type, select Under Polarity, select Reversed. Under Associate with port number, enter the number

previously-selected port. Click Apply.

Repeat these steps for other differential port pairs in Click OKto dismiss the dialog box.


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Momentum Seminar

Placing and Defining PortsCoplanar Port Example: examples/Momentum/Microwav


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Momentum Seminar

Placing and Defining PortsCoplanar Port Example: examples/Momentum/Microwave


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Momentum Seminar

Placing and Defining PortsCoplanar Port Example

Note

displ

curre

elect

slot m

Ther

visua


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Momentum Seminar

Placing and Defining PortsCommon Mode Port Properties

Use common mode ports in designs where the polarity of fields is thor more ports (even modes propagate). The associated ports are exabsolute potential and are given the same port number.

Common mode ports have the following properties: They can be applied to objects on strip layers only A ground plane or other infinite metal (such as a cover) is require

design

Two or more ports can be associated Associated ports are excited with the same absolute potential (an The ports must be on the same reference plane

Note Port numbers for common ports amanner: on the layout, you will continue (instance names) that were assigned to eadded to the layout. Use the Momentum identify which group of ports will be treat

Also, when you view results, you will see port numbers. In the example above, theThe S-parameter results will be for comb

Note: C

thick c

(more o


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Momentum Seminar

Placing and Defining PortsDefining a Common Mode Port

Choose Momentum > Port Editor. Select the port that you want to assign this type to. N

number. In the Port Editor dialog box, under Port Type, select C

Mode. Click Apply. Select the second port. In the Port Editor dialog box, under Port Type, select C

Mode. Under Associate with port number, enter the number

that you selected first. Make sure that the value in thwith port number field is the same for additional portsexample, if you were associating three ports and the fassigned as port 1, for the second and third port, the entered into the Associate with port number field wouthe first port you choose, no value is entered in this fi

Click Apply. Repeat these steps for other common mode ports in t Click OKto dismiss the dialog box.


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Momentum Seminar

Placing and Defining PortsGround Reference Port

Ground references enable you to add explicit ground references to a cibe necessary if implicit grounds are in your design.Implicit ground is the potential at infinity, and it is made available to ththe closest infinite metal layer of the substrate. Implicit grounds are usports and with single ports that are connected to objects on strip metaThere are instances where the distance between a port and its implicit large electrically, or there are no infinite metal layers defined in the sucases, you need to add explicit ground references to ensure accurate sFor more information on using ground references, refer to "Simulating Ports and Ground References" on page A-10in the Momentum manual

You can apply ground references to the surfaces of object. The object mmetallization layers.

Note: Multiple ground reference ports can be associated with the samassociated with a single port, the ground reference port should be a poedge of an object in the same reference plane as the single port.


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Momentum Seminar

Placing and Defining PortsDefining a Ground Reference Port


Select the port that you want to assign as the ground re

In the Port Editor dialog box, under Port Type, select Gr

Under Associate with port number, enter the numbeinternal port that you want to associate with this groundsure that the distance between the port and ground refesmall.

Click Apply.


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Momentum Seminar

Placing and Defining PortsCPW with Finite Ground Planes using INTERNAL and G

Ports 1 and 2 are internal.

Ports 3, 4, 5, and 6 are ground reference . The groun

associated with the internal port using the editor.


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Momentum Seminar

Placing and Defining PortsRemapping Port Numbers

Some designs contain non-consecutive port numbers. This results in sare difficult to use. When Momentum simulates designs containing nonumbers, the ports are remapped to consecutive numbers in the resulowest port number is remapped to 1, and remaining numbers are remorder. The port numbers are not changed in the design itself. A messawindow announces the change, and lists the mappings.For example, if you are simulating a design with ports numbered 37 astatus message informs you of the changes:

Layout has non-consecutive port numbers.

Output files will have consecutive port numbers.

layout port -> output port

37 -> 1

101 -> 2

Port number remapping is done only for sampled and AFS CITIfiles anS-parameter datasets. It is not done for Visualization and far field filedone at the CITIfile level, and propagates to the dataset file. After remare in sync with the new port numbering.


62/345








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Americas

Canada (877) 894-4414



Asia Pacific

Australia 1 800 629 485

China 800 810 0189

Hong Kong 800 938 693

India 1 800 112 929

Japan 0120 (421) 345

Korea 080 769 0800

Malaysia 1 800 888 848


Thailand 1 800 226 008


Austria 0820 87 44 11

Belgium 32 (0) 2 404 93 40

Denmark 45 70 13 15 15

Finland 358 (0) 10 855 2100

France 0825 010 700*

*0.125 /minute

Germany 01805 24 6333**

**0.14 /minute

Ireland 1890 924 204Israel 972-3-9288-504/544

Italy 39 02 92 60 8484

Netherlands 31 (0) 20 547 2111

Spain 34 (91) 631 3300

Sweden 0200-88 22 55


United Kingdom 44 (0) 118 9276201






without notice.





Printed in USA, May 19, 20035989-9597EN


63/345





Agilent EEsof EDA



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Momentum Seminar

Details of Momentum

Solution process

Select Mode


Port SetupMesh Generation

Planar Solve

Display Results


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Momentum Seminar

Defining Mesh ParametersMesh Setup Control

Global mesh is the default.But you have choices.

In general, small

patterns are more

accurate but take

more time to solve.


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Momentum Seminar

Defining Mesh ParametersGlobal Mesh example with Edge Mesh

1 - Port2 - Calibration Line

3 - Mesh

4 - Edge Mesh

1

4

3

2

NOTE: You can view the mesh, ports, an

before simulating and make adjustments

Here, the cell size is the sall parts of the geometry,

the edges around each p

The calibration line

is automatically

drawn when the

port is defined -

more on this later.


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Momentum Seminar

Defining Mesh ParametersPrimitive Mesh example

The centerprimitiveof this geometry has a

different mesh (50 cells/wavelength) than th

outside geometries (20 cells/wavelength).

1

2

You can combine primitive m

layer mesh, and global mesh.

Next


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Momentum Seminar

Discretion Error - Longitudinal

Number of cells/wavelength

determines samples used forapproximation of true currents

Typical cells/wavelength is 20

30 or more is fine, but will slow down

the simulation

Minimum required to retain high-frequency accuracy is 10

Can retain accuracy AND speed with

10 cells/wavelength AND edge mesh

Remember, can also have layer-specific

meshes (or even object-specific

meshes) which allows finer mesheswhere needed and coarser meshes

where current density is not as high

(such as a finite ground plane)


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Momentum Seminar

Edge Mesh Accuracy


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Momentum Seminar

Mesh: Momentum versus MomentumRFMomentum RF & Polygon Mesh

Meshing complex geometries with POLYGONAL cells

Eliminates slivery triangles

Eliminates redundant R,L,C elements

Uncompromised accuracy for RF frequencies

Strongly reduced computer memoryStrongly reduced computation time

me

reduction

reduction


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Momentum Seminar

Using Momentum

Solution process

Select Mode



Planar Solve

Display Results

I1

I1

L1

Method of Moments

Maxwells Equations

Matrix Equation

Equivalent Circuit

[Z].[I]=[V]

[Z] = [R] + j[L] + 1/j[C]-1


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Momentum Seminar

The Low-frequency Breakdown Problem

This problem is essentially one of mathematical aspect ratios. Whenfunctions are used, the interaction matrix contains all of the reactan

matrix. As frequency approaches zero, the inductive reactances app

capacitive reactances approach infinity. This results in an ill-conditio

Any tool that uses rooftop functions as the sub-sectional basis funct

problem.

Momentum (not Momentum RF) experiences this low-frequency limitaccount for this, interpolation is used for three frequencies (in additi

sweeps): DC, f0, and 2f0. The low-frequency limit (f0, typically in k

selected in an empirical way and is a function of cell edge lengths an

increases as cell sizes decrease (resulting in shorter edges).

Momentum RF alleviates this problem by breaking the rooftop

star and loop basis functions.


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Momentum Seminar

MomentumRF & Star-Loop Basis Function

star basis functionloop basis function

Loop basis functions are solenoidalStar basis functions are irrotational Rooftop ba

Star-loop ba

db(S11)

db(S11)

1

- give well-conditioned interaction

matrix at low frequencies

- eliminate LF breakdown of

numerical solution

- give stable, accurate solutionsdown to DC (both magnitude and

phase)


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Momentum Seminar

Using Momentum

Solution process

Select Mode



Planar Solve

Display Results

More on this in the


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Momentum Seminar

Momentum Accuracy: A couple of absolu

Directly simulated frequency points have 60 dB accuracy. (Thcharacterized on through-lines. In other words, the observed n

those structures is ~ -60 dB. This does not mean that valid re

can not be obtained for designs with an isolation or other figur

-60 dB.)

For an AFS sweep, the simulated frequency points have 60 dBAFS calculated frequency points have ~ 50 to 60 dB accura

The rest depends on how accurately you can define your proble

Here are a few benchmarks


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Momentum Seminar

Momentum

Mesh: 20 cells/wavelength, 3 GHz

Frequencies: 14

Matrix size : 218

Process size : 14.13MB User time : 5 m 14 s

Momentum RF


Frequencies: 10

Matrix size : 56

Process size : 7.59 MB User time : 45 s

(*) Example from National Semiconductor

LTCC Filter Design

7.29

mm

[1] 25.2 mil LTCC

GND

AIR

[2] 3.6 mil[3] 7.2 mil

d

pha


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Momentum Seminar

RFIC/MMIC Applications

Momentum


Frequencies: 7

Matrix size : 274 Process size : 10.29 MB

User time : 11m 09s

Momentum RF


Frequencies: 7


User time : 1m 39s

0.30

mm 0.80

mm

[1] 600 um Silicon =12.5

GND

AIR

[2] 1.7 um

[3] 1.55 um

r=3.9

r=3.9

PC-NT Pentium II workstation (330 MHz)


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Momentum Seminar

RFIC / MMIC Applications

Momentum


Frequencies: 12

Matrix size : 221 Process size : 6.32MB

User time : 2 m 03 s

Momentum RF


Frequencies: 10



[1] 100 um GaAs

GND

AIR

0.76

mm1.65

mm

RPC-NT Pentium II workstation (330 MHz)


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Momentum Seminar

Microwave Lowpass Filter (Stripline)

Momentum


Frequencies: 20

Process size : 18.07MB


Momentum RF


Frequencies: 15

Process size : 12.29 MB User time : 2 m 21 s

6.0 mm

25.4

mm

Rule of thum

[1] 31 mil Duroid

GND

[2] 31 mil Duroid

GND



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Momentum Seminar

RF Board Power/Ground

Momentum Momentum RF

Measurements

[1] 59 mil

AIR

GND

FR4

50.8

mm

76.2

mm

P1 P2

50.8

mm

76.2

mm

P1 P2

Rule of thumb: freq < 1.63 GHz

PC-NT


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Momentum Seminar

RF Board Application

Mo

Me

Po

Fre

Ma

Pr

Us

reduced polygonal mesh

rectangular & triangular mesh

Momentum RF


Ports: 60

Frequencies: 6

Matrix size : 733

Process size : 59.35 MB User time : 48m 24s

S

35.60 mm

43.67 mm

[1] 30 mil

AIR

GND

FR4



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Momentum Seminar

Packaging Application

S(1,3)

S(1,1)

Momentum


Matrix size : 8244

Process size : > 1 GB

User time : > 2 days

Momentum RF


Matrix size : 1354


User time : 5h 17m 53s

port 1

port 2

port 3

7.6 mm

7.6 mm

port 4

ref 3

ref 4

1 2

4 3

ref 3ref 4

GNDVboard

Vchip



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Momentum Seminar

Microwave Applications

Momentum


Frequencies: 18

Matrix size : 181



Momentum RF


Frequencies: 14

Matrix size : 122

Process size : 2.13 MB


radia

pow

mag(S21)

mag(S11)[1] 25 mil Alumina

GND

AIR

6.65

mm

9.90

mm

Rule oPC-NT Pentium II workstation (330 MHz)


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Momentum Seminar

Microwave Applications

Momentum


Frequencies: 27



Momentum RF


Frequencies: 25

Process size : 4.75 MB


5.21

mm

24.82 mm

mag(S2

mag(S11

Rule o

[1] 25 mil Alumina

GND

[2] 185 mil AIR



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Momentum Seminar

Digital Application

full boardisolated trace

port 1

port 2

port 1

port 2

S(1,1)

isolated trace

S(1,2)

isolated trace

Momentum

Momentum RF

S(1,1)

full board


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Momentum Seminar

Digital Application

isolated trace

port 1

port 2

0.4 GHz

output

S(1,1)

isolated trace

S(1,2)

isolated trace


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Momentum Seminar

Digital Application

isolated trace

port 1

port 2

harmonic signal

2.33 GHz

no output

S(1,1)

isolated trace

S(1,2)

isolated trace


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Momentum Seminar

Digital Application

harmonic signal

2.33 GHz

harmonic signal is coupled to neighbor

and spread around the board


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Agilent Direct

www.agilent.com






Americas

Canada (877) 894-4414



Asia Pacific

Australia 1 800 629 485

China 800 810 0189

Hong Kong 800 938 693

India 1 800 112 929

Japan 0120 (421) 345

Korea 080 769 0800

Malaysia 1 800 888 848


Thailand 1 800 226 008


Austria 0820 87 44 11

Belgium 32 (0) 2 404 93 40

Denmark 45 70 13 15 15

Finland 358 (0) 10 855 2100

France 0825 010 700*

*0.125 /minute

Germany 01805 24 6333**

**0.14 /minute

Ireland 1890 924 204Israel 972-3-9288-504/544

Italy 39 02 92 60 8484

Netherlands 31 (0) 20 547 2111

Spain 34 (91) 631 3300

Sweden 0200-88 22 55


United Kingdom 44 (0) 118 9276201






without notice.







90/345





Agilent EEsof EDA



91/345

Momentum Seminar


30 minutes Brief overview of Getting Started with Momentum Creating/importing artwork in ADS Layout

Momentum versus Momentum RF Creating substrate stack-ups and mapping layout layers as metallization laye Placing and defining ports Defining mesh parameters

30 minutes Overview of Viewing and Using Momentum Results Momentum Datasets Momentum Visualization: currents, fields, s-parameters, gamma, Z0 ADS Data Display: s-, y-, and z-parameters, reactance (L/C), Q, etc.

60 minutes Advanced Topics [Part 1] Momentum Co-simulation (EM/circuit co-simulation) using Layout Component Momentum Co-optimization (EM/circuit co-optimization) using Layout Compon Thick conductor simulations {LAB} Spiral Inductor simulations {LAB}

15 minutes Break

105 minutes Advanced Topics [Part 2] Advanced Model Composer (AMC) Advanced Model Composer (AMC) {LAB}


4 hours 15 minutes


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Momentum Seminar

freq Independent frequency variable GAMMAn Modal propagation constant of portn(calculated

differential, and coplanar ports only)

PORTZn Impedance of Portn

S S-matrix, normalized to PORTZn

S(i,j) S-parameters for each port pairing, normalized t

S_50 S-matrix, normalized to 50 ohms

S_50(i,j) S-parameters for each port pairing, normalized t

S_Z0 S-matrix, normalized to Z0

S_Z0(i,j) S-parameters for each port pairing, normalized t

Z0n Characteristic impedance of Port n (calculated fdifferential, and coplanar ports only, others are

Momentum DatasetsVariables Available in the Standard Dataset

(Note that these are included in the datasets for Momentum simulations bu


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Momentum Seminar

All standard dataset variables, plus

S_CONV Boolean results for AFS convergence (succof the entire S-matrix at a given frequency

S_CONV(i,j) Boolean results for AFS convergence (succ

of S(i,j) at a given frequency

S_ERROR Estimated error of the entire S-matrix at a (< -60 dB for converged frequency points)

S_ERROR(i,j) Estimated error of S(i,j) at a given frequenc(< -60 dB for converged frequency points)

Momentum DatasetsVariables Available in the AFS Dataset


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Momentum Seminar

Adaptive Frequency Sampling

Simple Answer to Convergence

AFS has converged unless it tells you that it hasn't converged (e.g., when the mathat you specified was too low)


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Momentum Seminar

AFS Convergence Illustration


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Momentum Seminar

AFS Convergence


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Momentum Seminar

THETA Swept parameter of planar cut

PHI Swept parameter of conical cut

Etheta & Ephi Absolute E field strength (V) of theta and phi fa

Htheta & Hphi Absolute H field strength (A) of theta and phi fa

Elhp & Erhp Normalized E field strength of LHCP and RHCP

ARcp Axial ratio, derived from LHCP and RHCP far-fi Eco & Ecross Normalized E field strength of co and cross pol

ARlp Linear polarization axial ratio, derived from co far-field components

Gain, Directivity Gain, Directivity, Efficiency (in %), and Effectiv

Efficiency,Effective Area

Power Radiation intensity (in watts/steradian)

Momentum DatasetsVariables Available in the Far-field Dataset


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Momentum Seminar

Currents (surface currents)

S-parameters (mag, re, im, phase, and dB of S(i,j))

Transmission line data (propagation constant, characteri

Far-fields (radiation patterns & axial ratio in 3D and 2D)

Antenna parameters (gain, directivity, pointing angle, etc

Momentum VisualizationMomentum Visualization Enables You to View and Ana


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Momentum Seminar

Momentum Visualization: Surface Currents

When you scroll from 0-360,

you are actually varying thephase which illustrates thee^jwt time dependency ofthe surface currents

The lower and upper values inputinto these fields represents thelowest and highest values of the

surface current density (A/m)which will be viewedNoteffecurreffe

You also have theoption to look at theanimated currentswhen click on the

Display Propertiesbutton

Note: when you are viewing the results for a slot metallization layer, the MAGNETIC currenELECTRIC currents. You will also be viewing the mesh in the slots instead of a mesh on themesh for a slot layer.


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Momentum Seminar

Momentum Visualization: Surface Currents


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Momentum Seminar

Momentum Visualization:Far-field Radiation Patterns and S-parameters

R

M


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Momentum Seminar

ADS Data Display: S-parameters, L, and Q of an InduPowerful post processing data advantage of countless built-in

flexibility to wrote your own (thequations in a schematic or equat


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Agilent Direct

www.agilent.com






Americas

Canada (877) 894-4414



Asia Pacific

Australia 1 800 629 485

China 800 810 0189

Hong Kong 800 938 693

India 1 800 112 929

Japan 0120 (421) 345

Korea 080 769 0800

Malaysia 1 800 888 848


Thailand 1 800 226 008


Austria 0820 87 44 11

Belgium 32 (0) 2 404 93 40

Denmark 45 70 13 15 15

Finland 358 (0) 10 855 2100

France 0825 010 700*

*0.125 /minute

Germany 01805 24 6333**

**0.14 /minute

Ireland 1890 924 204Israel 972-3-9288-504/544

Italy 39 02 92 60 8484

Netherlands 31 (0) 20 547 2111

Spain 34 (91) 631 3300

Sweden 0200-88 22 55


United Kingdom 44 (0) 118 9276201






without notice.







104/345





Agilent EEsof EDA

eta e resentaton on omentum

vanceTopics - (Part 1 of 5)


105/345

Momentum Seminar



Creating/importing artwork in ADS Layout

Momentum versus Momentum RF Creating substrate stack-ups and mapping layout layers as metallization laye Placing and defining ports Defining mesh parameters




15 minutes Break




4 hours 15 minutes


106/345

Momentum Seminar

Momentum Component (EM/circuit co-simulation

ADS circuit simulation

Layout setup

Momentum C

EM/Circuit co-simulation from theschematic environment

Transparent integration of electromagneticsimulators at the schematic design level

Include physical layout parasitics in

schematic Momentum simulation options accessible

from schematic

Compiled Layout Components listed inprojects hierarchy

Model database for reuse option ADS 2002C: EM/Circuit co-

optimization


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Momentum Seminar

Momentum Component (EM/circuit co-simulationExample included in ADS 2002 & higher


C:\ADS2002\Examples\Momentum\emcktcosim\LTCC_prj


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Momentum Seminar



C:\ADS2002\Examples\Momentum\emcktcosim\LNAEmCktCosim_prj


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Momentum Seminar


Example begins wand uses Layout>Layout to create

2. Note that vendor component libraries

were utilized for lumped element andactive device artwork. Also note thata ground plane has been added withuniform clearance aroundtraces/components.


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Momentum Seminar


3. A symbol is defined for the schematicsubcircuit and then it is placed in a toplevel design for simulation using the

component library browser. (Theresults of this simulation will becompared to the results of the nextsimulation, which will include thephysical effects.)


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Momentum Seminar

Momentum Component (EM/circuit co-simulationExample included in ADS 2002 & higher 4. The artwor

include the poured grground planall connectbias, and onelements)


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Momentum Seminar

Momentum Component (EM/circuit co-simulation)Example included in ADS 2002 & higher (slightly modified

5. The standard example is then slightlymodified to include layout componentparameters (new in ADS 2002C).These parameters will be used to seethe effects of a via location on gain.

Modified version provided:

(LNAEmCktCosim_prj.zap)


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Momentum Seminar


6. The Layout/Momentum component isthen created


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Momentum Seminar


7. Next, the Layout/Momentum component is placed in a schematic using the compolike any other subcircuit/component). All of the lumped elements and the active the pins (ports in layout are replaced with pins in the Momentum Component sym


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Momentum Seminar


8. Once the model details are selected (Mode MomMW, MomRF, or data file; Frequproperties), the parameters of the Layout/Momentum component are then definedbe passed down from the top design. This is made possible by the next step, whParameters submenu.


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Momentum Seminar


9. The variables are now defined for this subcircuit. Note that we could have just pcomponent directly into the top level schematic, but this illustrates two methodsschematic.


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Momentum Seminar


10. The subcircuit that includes theLayout/Momentum component is thenplaced in a top level design for

simulation using the componentlibrary browser. (The results of thissimulation will be compared to theresults of the original simulation,which did not include the physicaleffects.)

11. Note the use of vswept using the component.


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Momentum Seminar


12. When each iteration osimulation encounterLayout/Momentum co

new values for paramMomentum simulatioautomatically invokedbackground (for each not previously solved

Modified version provided:



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Momentum Seminar


13. Finally, the reare comparedthe Momentu

also be studieInitial s

Momen

Momen

with swModified version provided:



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Momentum Seminar

Momentum Co-OptimizationEM/circuit co-optimization (layout/Momentum component

Adding Layout Parameters

Enables to sweep, tune or optimize geometrical va

layout

- typical dimensions (length, width, gaps, spacing,)

- interdependent layout modifications (e.g. length and width va

- port locations

Two ways to create a parameterized layout compon

1. Using nominal/perturbed layout artwork (Momentum Optimiz

2. Using existing (built-in or GCC defined) layout artwork macro

Nominal/Perturbed layout p

Subnetwork layout parame

NEW


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Momentum Seminar


Momentum > Component > Parameters

Opens the Layout Component Parameters dialog



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Momentum Seminar


Defining a Nominal/Perturbed Layout Parameter

Define the name

Define the type o

Enter the nomin Enter the pertur

Edit the perturba

if no AEL artwork macro available



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Momentum Seminar


Steps

1. Select points in layout

2. Select perturbation type3. Insert perturbation values4. Apply the perturbation

Repeat these stepsClick OK to terminate

AEL artwork macro is created

primitive layout component



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Momentum Seminar

Adding Layout Parameters to a Subnetwork

Defining a Subnetwork Layout Parameter

Define the name

Define the type o Enter the defaul

Associate the pa

subnetwork pa

If artwork macro IS available

hierarchical layout component



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Momentum Seminar

Adding Layout Parameters to a Subnetwork

Use the subnetwork layout parameter to set the parameter v

more subnetwork parameters in the design



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Momentum Seminar

Creating a Component

Momentum > Component > Create/Update

Opens the Create Momentum Component dialog

Dialog Entries: Symbol, Model Parameters and Model Data



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Momentum Seminar

EM Model Database

The simulated S-parameter models are

stored in an EM Model Database for later

reuse

During the Component Create/Update, the

user has the option to:

- delete all previous entries in the model

database

- add the last simulation results obtained

from Momentum simulation in Layout to

the model database



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Momentum Seminar

Instance Parameter Dialog

Double clicking on the Layout Component Instances in the Sch

Environment opens the Instance Parameter Dialog

In the Model Page, the user can specify the

- Model Type selection

- Model Parameter values

- Model Database Reuse option

In the Display Page, the user can specify

which model parameters are visible in theschematic design

In the Parameters Page, the user can

specify the layout parameter values and

the optimization setup (optional)



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Momentum Seminar

Model Interpolation

Pushing the Options.. button brings up

the Set Interpolation Options dialog

Allows to specify the interpolation delta

values for each layout parameter

Default values for the interpolation deltas are

provided (derived from the model parameters)

The EM model database can use

interpolation to significantly enhance

the efficiency of the co-simulation

The Layout Parameters are treated ascontinuous parameters

Instance Dialog box



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Momentum Seminar


Electronic

notebook for

LTCCEM/circuit co-

optimization

example

(shipped withADS 2002C and

higher) examples/Momentum/emcktcosim/LTCC_pr


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Momentum Seminar


Electronic

notebook for

LTCCEM/circuit co-

optimization

example




132/345

Momentum Seminar


Electronic

notebook for

LTCCEM/circuit co-

optimization

example




133/345

Momentum Seminar


Electronic

notebook for

LTCCEM/circuit co-

optimization

example




134/345

Momentum Seminar


Electronic

notebook for

LTCCEM/circuit co-

optimization

example




135/345

Momentum Seminar


Electronic

notebook for

LTCCEM/circuit co-

optimization

example




136/345

Momentum Seminar


Electronic

notebook for

LTCCEM/circuit co-

optimization

example




137/345

Momentum Seminar


Electronic

notebook for

LTCCEM/circuit co-

optimization

example




138/345

Momentum Seminar


Electronic

notebook for

LTCCEM/circuit co-

optimization

example




139/345

Momentum Seminar


Electronic

notebook for

LTCCEM/circuit co-

optimization

example


higher) examples/Momentum/emcktcosim/LTCC_prj


140/345








Agilent Direct

www.agilent.com






Americas

Canada (877) 894-4414



Asia Pacific

Australia 1 800 629 485

China 800 810 0189

Hong Kong 800 938 693

India 1 800 112 929

Japan 0120 (421) 345

Korea 080 769 0800

Malaysia 1 800 888 848


Thailand 1 800 226 008


Austria 0820 87 44 11

Belgium 32 (0) 2 404 93 40

Denmark 45 70 13 15 15

Finland 358 (0) 10 855 2100

France 0825 010 700*

*0.125 /minute

Germany 01805 24 6333**

**0.14 /minute

Ireland 1890 924 204Israel 972-3-9288-504/544

Italy 39 02 92 60 8484

Netherlands 31 (0) 20 547 2111

Spain 34 (91) 631 3300

Sweden 0200-88 22 55


United Kingdom 44 (0) 118 9276201






without notice.







141/345





Agilent EEsof EDA

eta e resentaton on omentum

vanceTopics - (Part 2 of 5)


142/345

Momentum Seminar



Creating/importing artwork in ADS Layout Momentum versus Momentum RF Creating substrate stack-ups and mapping layout layers as metallization laye Placing and defining ports Defining mesh parameters




15 minutes Break




4 hours 15 minutes


143/345

Momentum Seminar

1. Polygon

2. Rectangle or square

3. Polyline

Vias must

through ea

substrate l

through

An Aside: Vias in Momentum

For vias, only vertical currents and surface impedances are taken into accoumind that the horizontal and rotational currents are not included. One possi

be used to obtain more complete current calculations is to break up the via sshape, even that of a transmission line or spiral inductor) into a few thinner geometry on horizontal metallization layers as well. Make sure that providethickness parameters for only one of the horizontal metallization layers; othewill be calculated.


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Momentum Seminar

An Aside: Vias in Momentum

Vias are treated as one cell (in the vertical axis);therefore, the thickness of substrates whichcontain vias is limited to ~ 1/10th to 1/20th ofa wavelength (at the highest simulationfrequency). Vias passing through thickersubstrates can be accurately represented bysplitting these thick substrates into multiple

layers.

Please note that you can view both the meshand the surface current density (A/m) of viastructures using Momentum Visualization


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Momentum Seminar

Thick Conductor SimulationsMomentum model Finite Thickness Conductors

Zero thickness approach

loss formulation

Finite thickness approach

loss formulation

current modeling


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Momentum Seminar

Thick Conductor SimulationsConductor Loss in Momentum: Zero Thickness Approach

The Surface Impedance Concept is used to modelconductor losses in metallizations

t

Zs(t,

3D conductor Sheet conductor

The Surface Impedance Model Zs(t,,) takes the fthickness and frequency dependency (skin effect) of thconductor loss into account


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Momentum Seminar

Thick Conductor SimulationsConductor Loss in Momentum: Zero Thickness Approach

( )tj

jZ

cs

coth

+=

)( jjc

+=

+=

s

s

jZ

coth

)1(

2

=s

>>

tZ

s

1=

s

s

jZ

)1( +=

LF :

HF :

t

s

LF currentsection of

HF currendepth sur

The Surface Impedance formula:

=4.5e7 S/m

1 MHz 7510MHz 23100MHz 7.1 GHz 2.

Skin depth


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Thick Conductor SimulationsConductor Loss in Momentum: Finite Thickness Approa

3D conductors:

drawn on 2 layers (, t/2) connected with vi

LF currents run in entire crosssection of the metalization

t/2

LF :

HF currents run in DOUBLE

skin depth surface layer

sHF :

Better loss modelingBetter current modeling (inductive)

Zs(t/2,,bottom me


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Thick Conductor SimulationsCurrent Modeling in Momentum for 3D Conductors

x,y surface currents on top and bottom of finitez-surface currents on vias (side walls of finite t

x

yz


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Momentum Seminar

Thick Conductor SimulationsConductor Loss in Momentum - what to use?

Rule of thumb: w

t

w/t > 5h/w > 10

h

Use 1 zero thickness conductor with correct loss specific

other cases

2 metallization layers + vias

groun


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Momentum Seminar

Thick-conductor Approach: Two Approaches

, t/2

, t/2 stripviastrip

2 metallization layers + viaslayer3: p

Air (E

Subst

thick conductor

Port 1

Port 2

For Single Trace Stimulus: Common-mode ports

Port 1

Port 2

For Two or More Coupled Traces: Single ports in layout, recombin


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Thick-conductor Approach: For Single Trace

Port 3

Port 1

For Single Trace Stimulus:

Common-mode ports in Layout/Momentum are

Port 2

Port 4

Example:

Ports 1&3 are associated ascommon-mode ports, as are

ports 2&4


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Creating/importing artwork in ADS Layout Momentum versus Momentum RF Creating substrate stack-ups and mapping layout layers as metallization laye Placing and defining ports Defining mesh parameters




15 minutes Break




4 hours 15 minutes


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Momentum Seminar

Thick-conductor Approach: For Single TraceMicrostrip Coupled-line Filter Example: initial layout for

from schematic (substrate definition also updated from

filter_thick_metal_prj/DA_CLFilter1_untitled1.dsn


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Momentum Seminar

Thick-conductor Approach: For Single TraceMicrostrip Coupled-line Filter Example: verify substrate

metallization definitions



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Momentum Seminar

Thick-conductor Approach: For Single TraceMicrostrip Coupled-line Filter Example: initial Momentu



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Momentum Seminar

Thick-conductor Approach: For Single TraceMicrostrip Coupled-line Filter Example: save as new des

components to enable copy-to-layer for the thick-conduc

filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn


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Momentum Seminar

Thick-conductor Approach: For Single TraceMicrostrip Coupled-line Filter Example: now begin copy

to the first two additional layers

filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn


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Momentum Seminar

Thick-conductor Approach: For Single TraceMicrostrip Coupled-line Filter Example: now copy

Presentation on ADS Momentum

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Transcript of Presentation on ADS Momentum