04/17/2023 1

TO STUDY THE ELECTRONIC –TRANSPORT PROPERTIES OF GRAPHENE NANORIBBON FOR APPLICATION IN TEMPERATURE NANOSENSORS

Supervisor :Mr. Ashish RamanDepartment of ECENIT, Jalandhar.

Presented by :Inderdeep Singh M.Tech (ECE)11204005

INTRODUCTION NANOELECTRONICS

Use of nanotechnology on electronic components

Utilizes technology less than 100nmStudies about quantum mechanical

properties Leads to miniaturization of the electronic

circuits

CNTD.. END OF SILICON ERA

According to Moore’s law, the number of transistors per square inch on integrated circuits had doubled every 2 years

To sustain Moore’s law in semiconductor manufacturing industry, the size of devices have to be smaller and smaller in the near future

CNTD..Use of Si in device manufacturing is going

through its fundamental limitations including scaling limitation and mobility issue

Research has shown that when Si is cut into very narrow ribbons or layers, the mobility decreases significantly and at the same time silicon’s characteristics vary considerably with the changes in temperature

CNTD..Silicon has some unavoidable problems at

nanoscale which are as follows :

Tunneling of current

Decrease in mobility when cut into narrow ribbons or layers

Temperature dependency

GRAPHENE AS REPLACEMENT MATERIALPlanar 2d structure High stability at nano-scaleAttractive electrical properties

carrier mobility (3000-27000cm^2/Vs)Mobility >15000 cm^2/Vs at room

temperatureIt has mobility 10 times as that of siliconMobility remains high even at high electric

field

CNTD.. BANDGAP ENGINEERINGPattern graphene sheets into narrow ribbonCrystallographic orientationLithography techniques

LITERATURE REVIEWPaper on the limitation of Si in device

manufacturingTITLE AUTHO

R YEAR

DETAILS

A Neutron Activation Analysis Study of theSources of Transition Group Metal Contamination in the Silicon Device Manufacturing Process

P.F.Schmidt and C. W. Pearce, J. Electrochem

1981 This particular paper looks at some of the limitations of using Si in device manufacturing industry.It also discusses contamination occurred during high temperature behavior of Si.

CNTD..

TITLE AUTHOR YEAR

DETAILS

Device scaling limits of Si MOSFETs and their application dependencies, Proceedings of the IEEE , vol.89, no.3,pp.259-288

Frank D.J.; Dennard R.H

Nowak E.; Solomon,

P.M.; Taur Y.; Hon Sum

Philip Wong

2001 This paper focuses on the scaling limitations of Si CMOS technology. These scaling limitsinclude leakage in tunneling current in Si MOSFETs and thermally generated sub-threshold currents

CNTD..Papers on high carrier mobility of graphene

TITLE AUTHOR YEAR

DETAILS

The rise of graphene

A. K. Geim S. Novoselov

2007 This paper gives us a brief idea about the potentials of graphene;future prospect of itin device manufacturing applications. It tells how graphene can be a superior choice as a candidate material to take over Si in devicemanufacturing industry.

CNTD..TITLE AUTHOR YEAR DETAILSMobility in graphene double gate field effect transistors

M.C. Lemme, T.J. Echtermeyer, M. Baus,B.N. Szafranek, J. Bolten, M. Schmidt, T. Wahlbrink, H.Kurz

2008 Carrier mobilities in single and double-gated graphene field effect transistors are compared in this paper and hence it tells us that even in double gated graphene FET the mobility exceeds the silicon mobility.

CNTD..TITLE AUTHOR YEAR DETAILSCurrent status of graphene transistors

M.C. Lemme 2009 This paper focuses on the advantages of graphene over CNTs. Some of the unique and promising properties of graphene demonstrated in this paper are high carrier mobilities,high current carrying capability exceeding 10^8 A/cm2, high thermal conductivity, high transparency and mechanical stability. Moreover, this paper proposes a method that can overcome the limitation of graphene being a zero band-gap material. The method includes creating a band gap in graphene by cutting it into narrow ribbons of less than a few tens of nanometers.

CNTD..Paper on thermal conductivity of graphene

TITLE AUTHOR YEAR DETAILSSuperior Thermal Conductivity of Single-Layer Graphene

Alexander A. Balandin, Suchismita Ghosh,Wenzhong Bao, Irene Calizo, Desalegne Teweldebrhan, Feng Miao, Chun Ning Lau

2008 the main focus is to trace the extremely high value of the thermal conductivity of graphene that makes it a reliable and promising material for future electronic applications

CNTD..TITLE AUTHOR YEAR DETAILSGraphene transistors 2011

Theory of graphene field effect transistors

Franck schwierz

David jimenez and oana moldovan

2011

2012

This paper discusses about the RF uses of the present graphene transistor. It shows the unsatisfying current saturation that limits the RF performance.

This paper presents a compact physics based model of the current-voltage characteristics of graphene field effect transistors of special interest for analog and radio frequency applications where bandgap engineering is not required.

PROBLEM FORMULATIONTo create the graphene nanoribbon sample with different orientations and hence calculate its electronic properties viz energy bandgap/V-I characteristics for the

verification of conductivity properties .

To apply different quantum computational methods on the Graphene nanoribbon sample and obtain the simulation results.

Make the best combination of the various quantum computational methods and hence utilise the obtained characteristics in temperature sensors.

CNTD..

Finally construct the temperature sensor at nano-scale using the graphene nanoribbon which is more sensitive/more power efficient and smaller in size as compared to the present day

silicon temperature sensors working at the micro-scale level.

SELECTED REFERRED PAPERS Mobility in graphene double gate field effect transistor by M.C. Lemme, T.J.

Echtermeyer, M. Baus,B.N. Szafranek, J. Bolten, M. Schmidt, T. Wahlbrink, H.Kurz (2008)

Graphene transistors 2011 by Franck schwierz (2011) Ultrathin Films of Single-Walled Carbon Nanotubes for Electronics and Sensors: A

Review of Fundamental and Applied Aspects by Cao, Q. & Rogers, J.A. (2009) Transport in nanostructures ,second edition,Cambridge University Press, United

States of America Ferry, D.K.; Goodnick, S.M. & Bird, J. (2009) Quantum Transport Modeling from First Principles by Jesse Maassen, Mohammed

Harb, Vincent Michaud-Rioux, Yu Zhu, and Hong Guo (2012) Nanoelectronic Device Simulation Using Extended Huckel Theory (EHT) and NEGF

by Zhiping Yu, Ximeng Guan, Ming Zhang, and Qiushi Ran (2008)

METHODOLOGYStudy various quantum computational methods

Apply the computational methods on the graphene nanoribbon constructed

Find out the electronic and conductivity properties with use of quantum computational software and hence utilise the results in the temperature

sensor device.

EXPECTED OUTCOMEUse of graphene at nano-scale applications.Graphene temperature nanosensors formed

would be having small size and lower weight.Graphene temperature nanosensors would be

highly sensitive, highly specific and would show exceptional stability.

PROGRESS OF WORK DONE SO FARStudied electronic and transport properties of

graphene nanoribbons.Studied various limitations of use of graphene

nanoribbons Studying about different quantum computational

methods available.Started working on quantum computational software

viz virtual nanolab.Constructed different samples of nanoribbons.Studying about the various interaction between the

graphene and the various other blocks of nanosensor.

Produced the energy band gap results of the various graphene nanoribbon samples created.

Constructing a two probe system with gold terminals to study the electronic properties of graphene nanoribbons.

Reviewing the best available quantum computational method which could produce accurate results.

REFERENCES Mobility in graphene double gate field effect transistor by M.C. Lemme, T.J.

Echtermeyer, M. Baus,B.N. Szafranek, J. Bolten, M. Schmidt, T. Wahlbrink, H.Kurz (2008)

Graphene transistors 2011 by Franck schwierz (2011) Ultrathin Films of Single-Walled Carbon Nanotubes for Electronics and

Sensors: A Review of Fundamental and Applied Aspects by Cao, Q. & Rogers, J.A. (2009)

Transport in nanostructures ,second edition,Cambridge University Press, United States of America Ferry, D.K.; Goodnick, S.M. & Bird, J. (2009)

Quantum Transport Modeling from First Principles by Jesse Maassen, Mohammed Harb, Vincent Michaud-Rioux, Yu Zhu, and Hong Guo (2012)

Nanoelectronic Device Simulation Using Extended Huckel Theory (EHT) and NEGF by Zhiping Yu, Ximeng Guan, Ming Zhang, and Qiushi Ran (2008)

Nano quantum and molecular computing edited by Sandeep k shukla and R. Iris.Bahar

www.nanohub.org