PowerPoint Presentation...Optimization of supply component irradiation: • Electron to X-ray...
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Lifetime study of electronic devices for extreme radiation conditions Andrea Šagátová 1,2 , Marko Fülöp 1 , Martin Magyar 3 , Vladimír Nečas 2 , Bohumír Zaťko 4 , Peter Hybler 1 , Michal Rafaj 3 1 University Centre of Electron Accelerators, Slovak Medical University in Bratislava, Ku kyselke 497, 911 06 Trenčín, Slovak Republic 2 Institute of Nuclear and Physical Engineering, Slovak University of Technology, Ilkovičova 3, 812 19, Bratislava, Slovak Republic 3 RMC Ltd., Trenčianska ulica 863/66, 018 51 Nová Dubnica, Slovak Republic 4 Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava, Slovak Republic CERN accelerator component • Engine for precise positioning of dipole magnets in Super LHC accelerator in CERN • Made in ZTS VVÚ KOŠICE Ltd., SK • Tested by PC controlled tester at ZTS VVÚ KOŠICE Ltd. SK Background Methodology Linear electron accelerator UELR 5-1S Producer NIIEFA, St. Petersburg Maximum beam power 1 kW Electron energy (3.6 - 6.2) MeV Beam repetition rate 5, 10, 20, 40, 120 or 240 Hz Converted X-rays up to 6.2 MeV Beam scanning width: 40 cm, 45 cm, 50 cm Beam diameter at window 11 mm Conveyor velocity: 0.1 mm/s - 100 mm/s Three modes of irradiation: I. the static scientific irradiation II. the in-line routine irradiation on conveyor III. the rotational irradiation LINEAR ELECTRON ACCELERATOR UELR 5-1S ACCELERATOR IN CROSS-SECTION VIEW OF THE BUILDING • Radiation technology development and its applications bring new requirements on related electronic devices. • The study of radiation effect on electronic devices is important for increasing their lifetime and the reliability of the whole technology, when used in radiation harsh environment like space, large accelerators, nuclear reactors etc. • We have studied the effect of the X-rays and the high energy electrons on lifetime of devices used in radiation extreme conditions: • the CERN accelerator component (by electrons) • the semiconductor devices for the first Slovak satellite (by X- rays) • the semiconductor detectors for radiation imaging and dosimetry (by electrons ) Method of lifetime study 1. Monte Carlo simulations of irradiation geometry and tested device together with dose-depth distribution in it 2. Irradiation of phantom of tested device 3. Irradiation of tested device 4. Electrical and /or mechanical functional tests of irradiated device in collaboration with: Slovak University of Technology in Bratislava, SK, ZTS VVÚ KOŠICE Ltd., SK 5. Proposal of measures for longer device operational life in real radiation fields Radiation sensitive wires Radiation sensitive connectors Simulation of operating radiation environment: Stray radiation fields are created at high-energy particle accelerators by the intentional interaction of the accelerated beam with targets, beam dumps, collimators and by unintentional beam losses on structural components of the machine. At electron accelerators (UCEA), the most important secondary radiation is bremsstrahlung photons and high-energy electrons produced in electromagnetic cascades. At proton accelerators (CERN), interaction of the beam with materials generates a hadron cascade containing neutrons, charged hadrons, muons, photons and electrons. Dominant are neutrons. Simulation of secondary particles of 250 MeV protons at various depths of concrete shield impinging on an iron target thicker than the proton range (A) and neutron energy distributions in iron after various concrete thicknesses penetration (B): A B Absorbed dose distributions in supply components irradiated at CERN proton accelerator and by X-rays of 5 MeV linac are similar within relative deviation of 20% according to MC simulation. Optimization of supply component irradiation: • Electron to X-ray conversion efficiency only 15-17 % • 2 MGy: 200 h X -ray or 20 h electron irradiation • e - and X-rays: similar radiation damage, electron range in material has to be considered (only for low density components). Suggestion for making supply component more radiation resistant : Shielding of supply component by 8 cm thick polyethylene (CH 2 ) with 3% B will decrease the absorbed dose by 12%. Irradiation Partial dose [kGy] Total dose [kGy] Type of radiation Functional test result 1. 250 250 X-rays Functional 2. 500* 750 electrons Functional 3. 500* 1250 electrons Functional 4. 750* 2000 electrons Functional Beam repetition rate 10 Hz, scanning width 40 cm, steady mode Results: • After 250 kGy – connector mechanically destroyed • After 750 kGy – significant color change of plastic parts • After 2 MGy – engine still functional UCEA SMU Conclusions • The CERN accelerator component, the engine for dipole precise positioning, tested up to 2 MGy of electrons, only its plastic were mechanically destroyed. • The commercial semiconductor devices for skCUBE satellite power unit from various manufacturers were tested up to a dose of 1300 Gy of X-rays, representing the dose obtained by satellite on its orbit during about 3 years. • The semiconductor detectors were irradiated up to 120 kGy of electrons preserving the functionality with initial improvement of energy resolution followed by its degradation. Trenčín UCEA ,Trenčín, SK IRRADIATING ROOM Semiconductor devices for skCUBE Semiconductor detectors of radiation SkCUBE, the first Slovak satellite: • made by Slovak Organization for Space Activities • ready for launch in 2017 • Circular Earth’s orbit with 500 km altitude with an inclination angle of 98 gives estimated ionizing dose exposure of 400 Gy/year (40 kRad/y) • Mission duration from 1 to 2 years • Commercial semiconductor devices for the skCUBE power supply unit were chosen according to their radiation hardness evaluated by X-ray irradiation 7.1.2016: presentation of final skCUBE . SkCUBE with power source board. -6 -4 -2 0 2 4 9.6 9.7 9.8 9.9 10.0 10.1 10.2 10.3 -10 -5 0 5 10 fz = 10Hz, fs= 0.25Hz, dr=40cm, rtg. to 5 MeV, h = 98cm, t=1380s ionizing chamber 104,5nC = 5Gy, dose-rate = 0.722814 rad/s dose(Gy) y(cm) x (cm) 9.650 9.734 9.818 9.901 9.985 10.07 10.15 10.24 10.32 Irradiation: • By continuous spectrum of X-rays up to 5 MeV • Beam repetition rate 10 Hz, scanning width 40 cm, steady mode • Doses obtained in 13 steps Electronic devices for satellite power supply mounted on PCB ( Printed Circuit Board) with ionizing chamber on the right. Results: Two kinds of degradation with increasing applied dose: • the output voltage of device degraded and the input current preserved with applied dose (voltage references) • the functionality of device is preserved, but the input current dramatically increases (battery chargers) Homogeneity of irradiating field. 0 200 400 600 800 1000 1200 1.248 1.249 1.250 1.251 1.252 1.253 Output voltage (V) Dose (Gy) Sample REF3312Al: 1 2 0 200 400 600 800 1000 1200 1.24 1.26 1.28 1.30 1.32 1.34 Output voltage (V) Dose (Gy) Sample ADR1581A: 1 2 0 200 400 600 800 1000 0 500 1000 1500 2000 2500 3000 3500 Input current at 2 V (A) Dose (Gy) SPV1040 sample: 1 2 3 4 0.6 0.8 1.0 1.2 1.4 Starting input voltage (V) The output voltage of references as a function of accumulative dose. The input current of battery chargers as a function of accumulative dose. 0 20 40 60 80 100 120 50 55 60 65 70 75 Rev. voltage 200 V 241 Am - - 59.5 keV 4A - 20 kGy/h CCE (%) Dose (kGy) 20 40 60 80 100 0 500 1000 1500 2000 2500 3000 3500 Channel Counts per channel Channel Dose: 0 kGy 2 kGy 24 kGy 40 kGy 86 kGy 120 kGy Detector 4A2, Rev. voltage 200 V, t = 100 s, 241 Am - - 59.5 keV dose rate 20 kGy/h 20 40 60 80 100 1 10 100 1000 10000 Counts per channel 0 20 40 60 80 100 120 15 20 25 30 35 40 Rev. voltage 200 V 241 Am - - 59.5 keV 4A - 20 kGy/h FWHM (%) Dose (kGy) GaAs detectors of ionizing radiation • Made by Slovak Academy of Sciences in Bratislava, SK • Working in single photon counting mode • Prepared from 230 µm thick semi-insulating GaAs. Top Schottky contact: circle: 1 mm, Ti/Pt/Au (10/35/90 nm) , Back ohmic contact: full-back-side, Ni/AuGe/Au (30/50/90 nm) • Developed for digital imaging with X-ray tube and particle tracking in space and accelerators Irradiation: By 5 MeV electrons, Beam repetition rate 10 Hz, scanning width 40 cm, steady mode, Doses obtained in 12 steps 28.4. 22.5. 5.6. 2.7. 18.8. 26.8.13.11.9.12. 19.1. 17.3. 27.4. 12.1. 0 20 40 60 80 100 120 2015 4 1 Dose (kGy) date 2 2014 Accumulative dose applied to detectors: 9.12.9.12.9.12. 12.12. 12.12. 15.1.16.1.20.1.27.1.29.1.29.1. 4.2. 27.2. 6.3. 0 200 400 600 800 1000 1200 1400 2015 50 10 Dose (Gy) date 25 2014 Accumulative dose applied to electronic devices for skCUBE: SI GaAs DETECTORS for digital radiation imaging Detector charge collection efficiency (CCE) systematically decreases with applied dose. Gradual degradation of relative energy resolution (FWHM) with accumulative dose in the range of doses of 24 up to 120 kGy. . Detector ability to measure spectra after radiation degradation. 0 2 4 6 8 10 12 14 16 0 1 2 3 4 5 6 Dose (kGy) Material depth (mm) GaAs Si 5 MeV electrons Dose-depth distribution in Si and GaAs -20 -15 -10 -5 0 5 10 15 20 0 50 100 150 200 250 300 350 Dose (kGy) Distance from the beam centre (cm) distance from acc. window: y=10 cm y=20 cm y=30 cm y=40 cm y=55 cm y=96 cm Dose distribution perpendicular to beam scan Results: Irradiation
Transcript of PowerPoint Presentation...Optimization of supply component irradiation: • Electron to X-ray...
Lifetime study of electronic devices for extreme radiation conditions
Andrea Šagátová1,2, Marko Fülöp1, Martin Magyar3, Vladimír Nečas2, Bohumír Zaťko4, Peter Hybler1, Michal Rafaj3
1 University Centre of Electron Accelerators, Slovak Medical University in Bratislava, Ku kyselke 497, 911 06 Trenčín, Slovak Republic
2 Institute of Nuclear and Physical Engineering, Slovak University of Technology, Ilkovičova 3, 812 19, Bratislava, Slovak Republic 3 RMC Ltd., Trenčianska ulica 863/66, 018 51 Nová Dubnica, Slovak Republic
4 Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava, Slovak Republic
CERN accelerator component • Engine for precise positioning of dipole magnets in Super
LHC accelerator in CERN • Made in ZTS VVÚ KOŠICE Ltd., SK • Tested by PC controlled tester at ZTS VVÚ KOŠICE Ltd. SK
Background
Methodology
Linear electron accelerator UELR 5-1S Producer NIIEFA, St. Petersburg Maximum beam power 1 kW Electron energy (3.6 - 6.2) MeV Beam repetition rate 5, 10, 20, 40, 120 or 240 Hz Converted X-rays up to 6.2 MeV Beam scanning width: 40 cm, 45 cm, 50 cm Beam diameter at window 11 mm Conveyor velocity: 0.1 mm/s - 100 mm/s
Three modes of irradiation: I. the static scientific irradiation
II. the in-line routine irradiation on conveyor III. the rotational irradiation
LINEAR ELECTRON ACCELERATOR UELR 5-1S
ACCELERATOR IN CROSS-SECTION VIEW OF THE BUILDING
• Radiation technology development and its applications bring new requirements on related electronic devices.
• The study of radiation effect on electronic devices is important for increasing their lifetime and the reliability of the whole technology, when used in radiation harsh environment like space, large accelerators, nuclear reactors etc.
• We have studied the effect of the X-rays and the high energy electrons on lifetime of devices used in radiation extreme conditions: • the CERN accelerator component (by electrons) • the semiconductor devices for the first Slovak satellite (by X-
rays) • the semiconductor detectors for radiation imaging and
dosimetry (by electrons )
Method of lifetime study 1. Monte Carlo simulations of irradiation
geometry and tested device together with dose-depth distribution in it
2. Irradiation of phantom of tested device 3. Irradiation of tested device 4. Electrical and /or mechanical functional tests
of irradiated device in collaboration with: Slovak University of Technology in Bratislava, SK, ZTS VVÚ KOŠICE Ltd., SK
5. Proposal of measures for longer device operational life in real radiation fields
Radiation sensitive wires Radiation sensitive connectors
Simulation of operating radiation environment: Stray radiation fields are created at high-energy particle accelerators by the intentional interaction of the accelerated beam with targets, beam dumps, collimators and by unintentional beam losses on structural components of the machine. At electron accelerators (UCEA), the most important secondary radiation is bremsstrahlung photons and high-energy electrons produced in electromagnetic cascades. At proton accelerators (CERN), interaction of the beam with materials generates a hadron cascade containing neutrons, charged hadrons, muons, photons and electrons. Dominant are neutrons.
Simulation of secondary particles of 250 MeV protons at various depths of concrete shield impinging on an iron target thicker than the proton range (A) and neutron energy distributions in iron after various concrete thicknesses penetration (B):
A B
Absorbed dose distributions in supply components irradiated at CERN proton accelerator and by X-rays of 5 MeV linac are similar within relative deviation of 20% according to MC simulation. Optimization of supply component irradiation: • Electron to X-ray conversion efficiency only 15-17 % • 2 MGy: 200 h X -ray or 20 h electron irradiation • e- and X-rays: similar radiation damage, electron range in material has to be
considered (only for low density components).
Suggestion for making supply component more radiation resistant : Shielding of supply component by 8 cm thick polyethylene (CH2) with 3% B will decrease the absorbed dose by 12%.
Irradiation Partial dose [kGy]
Total dose [kGy]
Type of radiation
Functional test result
1. 250 250 X-rays Functional
2. 500* 750 electrons Functional
3. 500* 1250 electrons Functional
4. 750* 2000 electrons Functional
Beam repetition rate 10 Hz, scanning width 40 cm, steady mode
Results: • After 250 kGy – connector mechanically destroyed • After 750 kGy – significant color change of plastic parts • After 2 MGy – engine still functional
UCEA
SMU
I
Conclusions • The CERN accelerator component, the engine for dipole precise positioning,
tested up to 2 MGy of electrons, only its plastic were mechanically destroyed. • The commercial semiconductor devices for skCUBE satellite power unit from
various manufacturers were tested up to a dose of 1300 Gy of X-rays, representing the dose obtained by satellite on its orbit during about 3 years.
• The semiconductor detectors were irradiated up to 120 kGy of electrons preserving the functionality with initial improvement of energy resolution followed by its degradation.
Trenčín
UCEA ,Trenčín, SK
IRRADIATING ROOM
Semiconductor devices for skCUBE
Semiconductor detectors of radiation
SkCUBE, the first Slovak satellite: • made by Slovak Organization for Space Activities • ready for launch in 2017 • Circular Earth’s orbit with 500 km altitude with an
inclination angle of 98 gives estimated ionizing dose exposure of 400 Gy/year (40 kRad/y)
• Mission duration from 1 to 2 years • Commercial semiconductor devices for the skCUBE
power supply unit were chosen according to their radiation hardness evaluated by X-ray irradiation
7.1.2016: presentation of final skCUBE . SkCUBE with power source board.
-6
-4
-2
0
2
4
9.6
9.7
9.8
9.9
10.0
10.1
10.2
10.3
-10
-5
0
5
1 0
fz = 10Hz, fs= 0.25Hz, dr=40cm, rtg. to 5 MeV, h = 98cm, t=1380s
ionizing chamber 104,5nC = 5Gy, dose-rate = 0.722814 rad/s
do
se
(Gy)
y (cm)x (cm)
9.650
9.734
9.818
9.901
9.985
10.07
10.15
10.24
10.32
Irradiation: • By continuous spectrum of X-rays up to 5 MeV • Beam repetition rate 10 Hz, scanning width
40 cm, steady mode • Doses obtained in 13 steps
Electronic devices for satellite power supply mounted on PCB ( Printed Circuit
Board) with ionizing chamber on the right.
Results: Two kinds of degradation with increasing applied dose: • the output voltage of device degraded
and the input current preserved with applied dose (voltage references)
• the functionality of device is preserved, but the input current dramatically increases (battery chargers)
Homogeneity of irradiating field.
0 200 400 600 800 1000 12001.248
1.249
1.250
1.251
1.252
1.253
Ou
tpu
t vo
lta
ge
(V
)
Dose (Gy)
Sample REF3312Al:
1
2
0 200 400 600 800 1000 1200
1.24
1.26
1.28
1.30
1.32
1.34
Outp
ut voltage (
V)
Dose (Gy)
Sample ADR1581A:
1
2
0 200 400 600 800 10000
500
1000
1500
2000
2500
3000
3500
Inp
ut
cu
rre
nt
at 2
V (
A)
Dose (Gy)
SPV1040 sample:
1
2
3
4
0.6
0.8
1.0
1.2
1.4
Sta
rtin
g in
pu
t vo
lta
ge
(V
)
The output voltage of references as a function of accumulative dose.
The input current of battery chargers as a function of accumulative dose.
0 20 40 60 80 100 120
50
55
60
65
70
75
Rev. voltage 200 V241Am - - 59.5 keV
4A - 20 kGy/h
CC
E (
%)
Dose (kGy)20 40 60 80 1000
500
1000
1500
2000
2500
3000
3500
Channel
Co
un
ts p
er
ch
an
ne
l
Channel
Dose:
0 kGy
2 kGy
24 kGy
40 kGy
86 kGy
120 kGy
Detector 4A2, Rev. voltage 200 V, t = 100 s, 241
Am - - 59.5 keV
dose rate 20 kGy/h
20 40 60 80 1001
10
100
1000
10000
Co
un
ts p
er
ch
an
ne
l
0 20 40 60 80 100 12015
20
25
30
35
40
Rev. voltage 200 V241Am - - 59.5 keV
4A - 20 kGy/h
FW
HM
(%
)
Dose (kGy)
GaAs detectors of ionizing radiation • Made by Slovak Academy of Sciences in
Bratislava, SK • Working in single photon counting mode • Prepared from 230 µm thick semi-insulating
GaAs. Top Schottky contact: circle: 1 mm, Ti/Pt/Au (10/35/90 nm) , Back ohmic contact: full-back-side, Ni/AuGe/Au (30/50/90 nm)
• Developed for digital imaging with X-ray tube and particle tracking in space and accelerators
Irradiation: By 5 MeV electrons, Beam repetition rate 10 Hz, scanning width 40 cm, steady mode, Doses obtained in 12 steps
28.4. 22.5. 5.6. 2.7. 18.8. 26.8.13.11.9.12. 19.1. 17.3. 27.4. 12.1.
0
20
40
60
80
100
120
2015
41
Dose (
kG
y)
date
2
2014
Accumulative dose applied to detectors:
9.12.9.12.9.12.12.12.12.12.15.1.16.1.20.1.27.1.29.1.29.1. 4.2. 27.2. 6.3.
0
200
400
600
800
1000
1200
1400
2015
5010
Dose (
Gy)
date
25
2014
Accumulative dose applied to electronic devices for skCUBE:
SI GaAs DETECTORS for digital radiation imaging
Detector charge collection efficiency (CCE) systematically decreases with applied dose.
Gradual degradation of relative energy resolution (FWHM) with accumulative dose in the range of doses of 24 up to 120 kGy.
.
Detector ability to measure spectra after radiation degradation.
0 2 4 6 8 10 12 14 160
1
2
3
4
5
6
Dose (
kG
y)
Material depth (mm)
GaAs
Si
5 MeV electrons
Dose-depth distribution in Si and GaAs
-20 -15 -10 -5 0 5 10 15 200
50
100
150
200
250
300
350
Dose (
kG
y)
Distance from the beam centre (cm)
distance from
acc. window:
y=10 cm
y=20 cm
y=30 cm
y=40 cm
y=55 cm
y=96 cm
Dose distribution perpendicular to beam scan
Results:
Irradiation
